CN108055017A - A kind of resonator structure for ultra-wide band SAW filter design - Google Patents
A kind of resonator structure for ultra-wide band SAW filter design Download PDFInfo
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- CN108055017A CN108055017A CN201810141551.8A CN201810141551A CN108055017A CN 108055017 A CN108055017 A CN 108055017A CN 201810141551 A CN201810141551 A CN 201810141551A CN 108055017 A CN108055017 A CN 108055017A
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- wide band
- saw filter
- band saw
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
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- General Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Ultra-wide band SAW filter has huge demand in the multiple fields particularly communications field, and the resonator of high electromechanical coupling factor is the key point for designing ultra-wide band SAW filter.The present invention provides a kind of resonator structure for ultra-wide band SAW filter design, structure includes electrode layer 1, piezoelectric substrate layer 2, substrate layer 3 from top to bottom.The electrode layer material is gold（Au）, aluminium（Al）Or copper（Cu）.The piezoelectric substrate layer material cuts the niobium indium magnesium lead plumbate ternary ferroelectric crystal of X biography Doped with Titanium lead plumbates for θ degree Y（YX‑PIMN‑xPT）.The substrate is carborundum crystals（SiC）, including 3C SiC and 6H SiC.The electrode layer standardizes thickness:0.01λ≤he≤ 0.15 λ, λ are surface acoustic wave wavelength.The piezoelectric substrate layer material standardizes thickness：0.3λ≤hPIMNT≤ 2 λ, Eulerian angles are：90 °≤θ≤50 ° and 60 °≤θ≤90 °.
Description
Technical field
The present invention relates to a kind of resonator structures for SAW filter design, and in particular to one kind is used to surpass band
The resonator structure of wide SAW filter design.
Background technology
Ultra-wide band SAW filter has huge demand in many fields particularly communications field.Because wave filter
Bandwidth be to be determined by the electromechanical coupling factor of resonator, therefore, the resonator of high electromechanical coupling factor is design ultra-wide band sound
The key point of surface wave filter.
Common wave filter piezoelectric substrate material includes lithium tantalate and lithium columbate crystal, but their electromechanical coupling factor
All than relatively low, and compared to both piezoelectric materials, lead magnesio-niobate system ferroelectric crystal has extremely high electromechanical coupling factor.
At present, have document report and be based on lead magnesium niobate-lead titanate（PMN-xPT）Binary ferroelectric crystal design sound table resonance
Device can obtain very big electromechanical coupling factor, but the Curie temperature of PMN-xPT and phase transition temperature are relatively low, are unfavorable for device
Work is in high temperature environments.However, nearest niobium indium magnesium titanate-zirconate（PIMN-xPT）Ternary ferroelectric crystal is reported, compared with
PMN-xPT, which is compared, has higher Curie temperature and phase transition temperature, and still, surface acoustic wave movement velocity is relatively low in this crystal, no
Beneficial to design high frequency filter.Therefore, it is urgently to be resolved hurrily for how designing high frequency ultra-wide band SAW filter based on PIMN-xPT
Hot issue.
The content of the invention
In order to solve the deficiencies in the prior art, the present invention provides one kind to be based on PIMN-xPT piezoelectric layers and SiC substrate layer
For designing the resonator structure of ultra-wide band, high frequency SAW filter.
Technical solution provided by the invention is：
A kind of resonator structure for ultra-wide band SAW filter design, which is characterized in that structure includes from top to bottom
Electrode layer 1, piezoelectric substrate layer 2, substrate layer 3.
Preferably, the electrode layer material is gold（Au）, aluminium（Al）Or copper（Cu）.
Preferably, the piezoelectric substrate layer material cuts the niobium indium magnesium lead plumbate ternary ferroelectric crystalline substance of X biography Doped with Titanium lead plumbates for θ degree Y
Body（YX-PIMN-xPT）.
Preferably, the substrate is carborundum crystals（SiC）, including 3C-SiC and 6H-SiC.
Preferably, the electrode layer standardization thickness is:0.01 λ≤he≤0.15 λ, λ are surface acoustic wave wavelength.
Preferably, the piezoelectric substrate layer material standardization thickness：The λ of 0.3 λ≤hPIMNT≤2, Eulerian angles are：-90°≤θ
≤ -50 ° and 60 °≤θ≤90 °.
Compared with prior art, the present invention has the following advantages：
（1）Compared to common resonator device, there is the electromechanical coupling factor of bigger, be conducive to design the sound table filtering of ultra-wide band
Device；
（2）It is simple in structure, be conducive to mass production.
Description of the drawings
Fig. 1 is resonator structure schematic diagram, from top to bottom including electrode layer 1, piezoelectric substrate layer 2, substrate layer 3, standard
It is respectively he, hPIMNT, hs to change thickness, and surface acoustic wave wavelength is λ；
Fig. 2 is main mould in resonator piezoelectric substrate and clutter electromechanical coupling factor with thickness of electrode change curve；
Fig. 3 is main mould in resonator piezoelectric substrate and clutter electromechanical coupling factor with piezoelectric layer thickness change curve；
Fig. 4 is main mould in resonator piezoelectric substrate and clutter electromechanical coupling factor with piezoelectric layer Eulerian angles cut type change curve.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.The present embodiment using inventive technique scheme as
Premise is implemented, but protection scope of the present invention is not limited to following embodiments.
As shown in Figure 1, the present invention provides a kind of resonator structure for ultra-wide band SAW filter design, structure
From top to bottom include electrode layer 1, piezoelectric substrate layer 2, substrate layer 3. its standardize thickness be respectively he, hPIMNT, hs.
The niobium indium magnesium titanate-zirconate that this example is chosen（PIMN-xPT）Crystal is PIMN-0.28PT, is abbreviated as PIMNT.
The electrode material of selection is Au, and the substrate material of selection is 3C-SiC, and substrate thickness fixes the λ of hs=0.5.
Electromechanical coupling factor is calculated respectively with thickness of electrode, piezoelectric layer thickness, cut type Eulerian angles situation of change, is such as schemed
2nd, shown in Fig. 3, Fig. 4.
From figure 2 it can be seen that Au thickness of electrode, in the range of 0..01 λ -0.13 λ, main mould has great mechanical-electric coupling
Coefficient, up to 70%, while clutter can be good at being suppressed.
From figure 3, it can be seen that PIMNT piezoelectric layer thickness, after 0.4 λ, the electromechanical coupling coefficient of main mould can be up to
70%, while clutter can be good at being suppressed.
Figure 4, it is seen that PIMNT piezoelectric layer cut type Eulerian angles can obtain a ratio at -90 ° -40 ° and 60 ° -90 °
Purer main mould, electromechanical coupling factor can reach more than 50%.
Above-described embodiment the result shows that, the resonator under the structure can obtain great main mould electromechanical coupling factor, high
Up to more than 50%, and optimum structural parameter can be good at clutter reduction.Obtain the master of pure very big electromechanical coupling factor
Mould plays a key effect for design ultra-wide band sound surface table wave filter.
Claims (6)
1. a kind of resonator structure for ultra-wide band SAW filter design, which is characterized in that structure is wrapped from top to bottom
Include electrode layer（1）, piezoelectric substrate layer（2）, substrate layer（3）.
2. the resonator structure for ultra-wide band SAW filter design according to claims 1, feature exist
In the electrode layer material is gold（Au）, aluminium（Al）Or copper（Cu）.
3. the resonator structure for ultra-wide band SAW filter design according to claims 1, feature exist
In the piezoelectric substrate layer material cuts the niobium indium magnesium lead plumbate ternary ferroelectric crystal of X biography Doped with Titanium lead plumbates for θ degree Y（YX-PIMN-
xPT）.
4. the resonator structure for ultra-wide band SAW filter design according to claims 1, feature exist
In the substrate is carborundum crystals（SiC）, including 3C-SiC and 6H-SiC.
5. the resonator structure for ultra-wide band SAW filter design according to claims 2, feature exist
In the electrode layer standardization thickness is：0.01≤he≤0.15 λ, λ are surface acoustic wave wavelength.
6. the resonator structure for ultra-wide band SAW filter design according to claims 3, feature exist
In the piezoelectric substrate layer material standardizes thickness：The λ of 0.3 λ≤hPIMN-xPT≤2, Eulerian angles are：- 90 °≤θ≤- 50 ° and
60°≤θ≤90°。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810141551.8A CN108055017A (en) | 2018-02-11 | 2018-02-11 | A kind of resonator structure for ultra-wide band SAW filter design |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810141551.8A CN108055017A (en) | 2018-02-11 | 2018-02-11 | A kind of resonator structure for ultra-wide band SAW filter design |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109905097A (en) * | 2019-01-31 | 2019-06-18 | 上海师范大学 | A kind of high-performance SAW resonator and preparation method thereof |
| CN110535451A (en) * | 2019-09-22 | 2019-12-03 | 电子科技大学 | A kind of SAW resonator of novel electrode structure |
| CN113206651A (en) * | 2021-06-04 | 2021-08-03 | 电子科技大学 | Lamb wave resonator with high electromechanical coupling coefficient and preparation method thereof |
| WO2023231882A1 (en) * | 2022-05-31 | 2023-12-07 | 华为技术有限公司 | Filter and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5654680A (en) * | 1996-01-30 | 1997-08-05 | Motorola, Inc. | Saw-based ladder filter including multiple coUpling coefficients (K2), Method therefor and radio incorporating same |
| CN1476668A (en) * | 2000-08-31 | 2004-02-18 | 索泰克公司 | Surface acoustic wave devices using non-symmetric optimized cuts of piezoelectric substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109905097A (en) * | 2019-01-31 | 2019-06-18 | 上海师范大学 | A kind of high-performance SAW resonator and preparation method thereof |
| CN110535451A (en) * | 2019-09-22 | 2019-12-03 | 电子科技大学 | A kind of SAW resonator of novel electrode structure |
| CN113206651A (en) * | 2021-06-04 | 2021-08-03 | 电子科技大学 | Lamb wave resonator with high electromechanical coupling coefficient and preparation method thereof |
| WO2023231882A1 (en) * | 2022-05-31 | 2023-12-07 | 华为技术有限公司 | Filter and electronic device |
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Application publication date: 20180518 |
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