CN112953440B - Resonator and method for manufacturing resonator - Google Patents
Resonator and method for manufacturing resonator Download PDFInfo
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- CN112953440B CN112953440B CN202110181071.6A CN202110181071A CN112953440B CN 112953440 B CN112953440 B CN 112953440B CN 202110181071 A CN202110181071 A CN 202110181071A CN 112953440 B CN112953440 B CN 112953440B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229920000334 poly[3-(3'-N,N,N-triethylamino-1-propyloxy)-4-methylthiophene-2,5-diyl hydrochloride] polymer Polymers 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims description 16
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 127
- 230000008878 coupling Effects 0.000 description 41
- 238000010168 coupling process Methods 0.000 description 41
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- 238000013461 design Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 description 3
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 239000002131 composite material Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present application provides a resonator and a method for manufacturing the resonator, wherein the resonator comprises: a substrate; a piezoelectric layer formed of a PMNT material and formed on the substrate; an electrode formed on the piezoelectric layer; and an oxide layer formed on the electrode and covering the electrode.
Description
Technical Field
The present application relates to an electronic device, and more particularly, to a resonator and a method of manufacturing the resonator.
Background
A surface acoustic wave (SAW: surface acoustic wave) device is an electronic device that operates based on the piezoelectric effect of a piezoelectric material and that uses a surface acoustic wave on the surface of the piezoelectric material, and that converts an electric input signal into a surface acoustic wave using an interdigital transducer (IDT: interdigital transducer), a periodic structure of metal electrodes shaped like a double-hand crossover, formed on the surface of the piezoelectric material, is a key element of present-day communication equipment.
The performance of SAW resonators can have a large impact on their performance, which in turn affects the stability, lifetime, etc. of the overall device, including SAW resonators, and even the overall system. Generally, the center frequency f of a conventional TC-SAW (Temperature Compensated SAW: temperature-compensated SAW resonator) 0 A temperature coefficient of frequency (TCF: temperature Coefficient of Frequency) of-20 to-25 ppm/DEG C (further optimizing to-20 ppm/DEG C) of not more than 3GHz, a quality factor Q of not more than 1500, a quality factor (FOM: figure of Merit) of not more than 100, and an electromechanical coupling coefficient K 2 (also written as k) 2 )≤10％。
Disclosure of Invention
Technical problem to be solved by the application
With the rapid development of large bandwidth communication such as 5G communication, there is a demand for higher performance of devices such as SAW resonators, particularly piezoelectric performance. However, the existing SAW resonators as described above cannot meet the requirements for large bandwidth communication.
The present application has been made in view of the above-described conventional problems, and an object thereof is to provide a resonator and a method for manufacturing the same, which can obtain excellent piezoelectric performance and realize a resonator excellent in overall performance for large-bandwidth communication.
Technical proposal for solving the technical problems
In one embodiment of the present application to solve the above-mentioned problems, there is provided a resonator characterized by comprising:
a substrate;
a piezoelectric layer formed of a PMNT material and formed on the substrate;
an electrode formed on the piezoelectric layer; and
an oxide layer formed on the electrode and covering the electrode.
In one embodiment of the present application, the PMNT material is a single crystal material and the polarization direction of the PMNT material is the [001] direction.
In one embodiment of the present application, the PMNT material is 0.62Pb (Mg 1/3 Nb 2/3 )O 3 -0.38PbTiO 3 。
In an embodiment of the application, the electrodes are formed of Ti, al, cu, au, pt, ag, pd, ni or an alloy thereof, or a laminate of these metals or alloys.
In one embodiment of the present application, the thickness of the electrode is 80nm to 180nm, the thickness of the substrate is 350 μm to 500 μm, and the thickness of the piezoelectric layer is 0.1λ to 2λ, where λ is the wavelength of the acoustic wave excited by the electrode.
In one embodiment of the application, the substrate is formed of one or more of SiC, siN, diamond, and Si.
In one embodiment of the application, the oxide layer is made of SiO 2 One or more of SiFO and SiOC.
In one embodiment of the present application to solve the above-described problems, there is provided a manufacturing method of manufacturing a resonator, including:
bonding a piezoelectric layer formed of a PMNT material to a substrate layer at a bonding temperature;
cooling the piezoelectric layer and the substrate layer after bonding is completed;
depositing an electrode on the piezoelectric layer; and
an oxide layer is deposited over the electrode.
In an embodiment of the present application, in the above manufacturing method, the PMNT material is 0.62Pb (Mg 1/3 Nb 2/3 )O 3 -0.38PbTiO 3 。
In an embodiment of the present application, in the above manufacturing method, the bonding temperature is less than or equal to 300 ℃.
Effects of the application
According to the present application, a SAW resonator with a large bandwidth, no spurious, and a high FOM can be obtained.
Drawings
So that the manner in which the above recited features of the present application can be understood in detail, a more particular description of the application, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings, wherein like reference numerals have been used, to facilitate an understanding, to identify identical elements that are common to the various figures. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this application and are therefore not to be considered limiting of its scope, for the application may admit to other equally effective embodiments, and that:
fig. 1 is a schematic diagram of a resonator according to the present application.
FIG. 2 is a graph showing the Curie temperature of PMNT materials according to the present application as a function of PT concentration.
FIG. 3 is a graph showing the elastic constant, dielectric constant, piezoelectric constant and electromechanical coupling coefficient of the single crystal of PMNT material PMNT62/38 according to the present application.
Fig. 4 is a schematic diagram showing the variation of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the substrate.
Fig. 5 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the piezoelectric layer.
Fig. 6 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the oxide layer.
Fig. 7 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the oxide layer in the case where the electrode thickness is 180nm.
Fig. 8 is a schematic diagram showing the variation of the quality factor of the resonator according to the present application with the thickness of the substrate.
Fig. 9 is a schematic diagram showing the change of the quality factor of the resonator according to the present application with the thickness of the piezoelectric layer.
Fig. 10 is a schematic diagram showing the change of the quality factor of the resonator according to the present application with the thickness of the oxide layer.
Fig. 11 is a schematic diagram showing the change of the quality factor of the resonator according to the present application with the thickness of the oxide layer in the case where the electrode thickness is 180nm.
Fig. 12 is a schematic diagram showing changes in electromechanical coupling coefficient and quality factor of a resonator according to the present application with thicknesses of a substrate, a piezoelectric layer, and an oxide layer.
Fig. 13 is a schematic view of a manufacturing process of a resonator according to the present application.
Fig. 14 is a flowchart of a manufacturing process of the resonator according to the present application.
It is contemplated that elements of one embodiment of the present application may be beneficially employed in other embodiments without further recitation.
Detailed Description
Other advantages and technical effects of the present application will become apparent to those skilled in the art from the present disclosure, by the following description of specific embodiments. Furthermore, the application is not limited to the following embodiments, but may be practiced or applied by other different embodiments, and various modifications and alterations may be made to the specific details in the present description without departing from the spirit of the application.
Hereinafter, specific embodiments of the present application will be described in detail based on the drawings. The drawings are for simplicity and are not drawn to scale, and the actual dimensions of the structures are not shown. For ease of understanding, the same reference numbers are used in the various figures to denote the same elements in common in the figures. The drawings are not to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation.
Applicants have found that lead-based composite perovskite relaxor ferroelectric single crystals (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 The (PMNT) material is made of a relaxor ferroelectric Pb (Mg 1/3 Nb 2/3 )O 3 (PMN) and normal ferroelectric PbTiO 3 ABO of (PT) composition 3 Solid solutions of perovskite structure wherein the A-position is Pb 2+ Ion, B is Mg 2+ 、Nb 5+ 、Ti 4+ Ions. At x in the range of 0.3 to 0.35, there is a three-party-tetragonal morphotropic phase boundary (MPB: morphotropic Phase Boundary) in the PMNT material. Within this range, extreme conditions occur for the various characteristics of the PMNT material, and with the x value, the phase structure of the PMNT changes: when x is less than 0.3, the PMNT material exists in a three-phase form; when x is 0.3 to 0.35, the phases coexist in the PMNT material; when x is greater than 0.35, the PMNT material exists in tetragonal phase form. PMNT single crystals when x is 0.30 to 0.35 and [001]]The PMNT single crystal material has excellent piezoelectric properties, such as piezoelectric constant d, and excellent piezoelectric properties 33 Reaches more than 1500pC/N, is 4-5 times higher than PZT ceramic, has an electro-induced strain of 1.7 percent, is an order of magnitude higher than PZT ceramic, and has an electromechanical coupling coefficient k 33 The electromechanical coupling coefficient is over 90 percent and is obviously higher than that of PZT ceramics by about 70 percent.
In order to improve various characteristics of dielectric properties, piezoelectric properties, and electromechanical coupling properties of the resonator, the resonator is fabricated using PMNT materials in embodiments of the present application.
Example 1]
Hereinafter, a resonator according to the present application will be described with reference to fig. 1 to 12.
First, a structure of a resonator according to the present application will be described with reference to fig. 1.
FIG. 1 is a schematic illustration of the present applicationSchematic diagram of a resonator. In the resonator of the present embodiment, the material of the substrate 2 may be a high acoustic velocity layer material, and SiC, siN, diamond, si, or the like is preferable. The thickness of the substrate 2 may be adjusted according to the product design, and is preferably 350 μm to 500 μm. A piezoelectric layer 1 is formed on a substrate 2. The thickness of the piezoelectric layer 1 may be determined according to the wavelength λ (λ=1μm, for example) of the acoustic wave excited by the electrode finger, and may be, for example, 0.1λ to 2λ. In the present embodiment, the material of the piezoelectric layer 1 is PMNT single crystal of the formula (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 X=0.38, the polarization direction of which is [001]]The orientation of this PMNT material is hereinafter referred to as PMNT62/38. Although single-crystal PMNT material with x=0.38 is used as the piezoelectric layer material of the resonator, those skilled in the art will understand that single-crystal PMNT material with x having other values (preferably in the range of 0.30 to 0.35) may also be used as the piezoelectric layer material of the resonator. The piezoelectric layer 1 has the electrode 3 thereon, and the duty ratio (duty ratio=electrode width/(electrode width+electrode pitch)) of the electrode 3 may be 0.5. The number of electrodes 3 may be adjusted according to the product design, for example, the number of pairs of electrodes 3 is preferably 1000 pairs. The electrode 3 may be made of a metal or an alloy such as Ti, al, cu, au, pt, ag, pd, ni, or a laminate of these metals or alloys. The thickness of the electrode 3 may be 80nm to 180nm, preferably 180nm. The structure of the electrode 3 may be a single-layer structure or a multi-layer structure. The structure of the electrode 3 is preferably a multilayer structure. The electrode 3 is further preferably formed by stacking three metal layers of Ni, cu, and Al, or by stacking three metal layers of Ti, mo, and Al. Electromechanical coupling coefficient K 2 ＝(π 2 /8)(f p 2 -f s 2 )/f s 2 Wherein f s For resonance frequency f p Is the antiresonant frequency. By measuring f s F p Can calculate and obtain the electromechanical coupling coefficient K 2 . An oxide layer 4 is formed on the electrode 3 and the piezoelectric layer 1. The material of the oxide layer 4 may be an oxide, preferably SiO 2 SiFO, siOC, etc. The thickness of the oxide layer 4 may be determined according to the wavelength λ of the acoustic wave excited by the electrode finger, and may be, for example, 0.1λ to 2λ.
The resonator of the present embodiment may be used as a TC-SAW resonator, or may be used as another type of SAW resonator as needed.
Next, the performance of the resonator of the present embodiment will be described using fig. 2 to 12.
FIG. 2 is a graphical representation of Curie temperature as a function of PT concentration for PMNT materials in accordance with the present application. As shown in FIG. 2, the PMNT material has a three-square quasi-homotypic phase boundary (MPB: morphotropic Phase Boundary) in the case that x is within 0.3-0.35. In this range, x is 0.3 to 0.35, the characteristics of the PMNT material are extremely high, and thus the PMNT material has excellent dielectric properties, piezoelectric properties, and the like. With different values of x, the phase structure of the PMNT material also changes: when x is less than 0.3, the PMNT material exists in a three-phase form and contains 71 DEG, 109 DEG and 180 DEG domains; when x is 0.3-0.35, the PMNT material is coexistent with multiphase; when x is greater than 0.35, the PMNT material exists in the form of tetragonal phase, containing 90 ° and 180 ° domains, and has good birefringence characteristics.
FIG. 3 is a graph showing the elastic constant, dielectric constant, piezoelectric constant and electromechanical coupling coefficient of the single crystal of PMNT material PMNT62/38 according to the present application. As shown in FIG. 3, the dielectric properties of PMNT62/38 are relatively stable, the dielectric constant is less variable, and the performance is relatively stable when the temperature is in the range from room temperature to 1500 ℃. The piezoelectric crystals are all anisotropic crystals, and for PMNT62/38 single crystals, the spontaneous polarization direction is along [001]]Direction. Free dielectric constant epsilon of PMNT62/38 single crystal 33 And epsilon 11 734 and 4301, respectively, show strong anisotropy.
In fig. 4 to 12 below, the substrate 2 is diamond, the piezoelectric layer 1 is PMNT, and the oxide layer 4 is SiO 2 And a resonator in which the material of the electrode 3 is Pt is described as an example. In fig. 4 to 12, "h diamond" represents the thickness of the substrate, "hPMNT" represents the thickness of the piezoelectric layer 1, "hSiO2" represents the thickness of the oxide layer 4, and "hPt" represents the thickness of the electrode 3.
FIG. 4 is a graph showing the variation of the electromechanical coupling coefficient of a resonator according to the present application with the thickness of a substrateSchematic representation of the process. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the substrate 2. Fig. 4 is drawn by: keeping the parameters of the thickness of the electrode 3 of the resonator 80nm, the thickness of the oxide layer 4 0.1λ and the thickness of the piezoelectric layer 1 λ constant, varying the thickness of the substrate 2 in the range of 350 μm to 500 μm, and measuring f for resonators having substrates 2 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 4, as the thickness of the substrate 2 increases, the electromechanical coupling coefficient of the resonator decreases first, then increases, and then decreases. When the thickness of the electrode 3 of the resonator in the present embodiment is 80nm, the thickness of the substrate 2 is 350 μm to 500 μm, the thickness of the oxide layer 4 is 0.1λ, and the thickness of the piezoelectric layer 1 is λ, the electromechanical coupling coefficient K of the resonator 2 More than or equal to 28 percent, and FOM more than or equal to 83 percent. At this time, the resonator has no spurious mode other than the main mode.
Fig. 5 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the piezoelectric layer. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the piezoelectric layer 1. Fig. 5 is drawn by: keeping the parameters of the thickness of the electrode 3 of the resonator 80nm, the thickness of the substrate 2 350 μm and the thickness of the oxide layer 4 0.1λ constant, varying the thickness of the piezoelectric layer 1 in the range of 0.1λ to 2λ, and measuring f for resonators having piezoelectric layers 1 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 5, as the thickness of the piezoelectric layer 1 increases, the electromechanical coupling coefficient of the resonator increases and then decreases. The electromechanical coupling coefficient is maximum when the thickness of the piezoelectric layer 1 is 0.1λ to 0.2λ. When the thickness of the electrode 3 of the resonator in the present embodiment is 80nm, the thickness of the substrate 2 is 350 μm, the thickness of the oxide layer 4 is 0.1λ, and the thickness of the piezoelectric layer 1 is 0.1λ to 2λ, the electromechanical coupling coefficient K of the resonator 2 More than or equal to 26 percent, and FOM more than or equal to 68 percent. When the thickness of the piezoelectric layer 1 is 0.4λ -2λ, in the resonator, except for the main portionNo other spurious modes are present outside the modes.
Fig. 6 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the oxide layer. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the oxide layer 4. Fig. 6 is drawn by: maintaining the parameters of 80nm thickness of the electrode 3 of the resonator, 350 μm thickness of the substrate 2, and λ thickness of the piezoelectric layer 1 constant, varying the thickness of the oxide layer 4 in the range of 0.1λ -2λ, and measuring f for resonators having oxide layers 4 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 6, the electromechanical coupling coefficient of the resonator continues to decrease as the thickness of the oxide layer 4 increases. The electromechanical coupling coefficient is maximum when the thickness of the oxide layer 4 is 0.1λ to 0.2λ. When the thickness of the electrode 3 of the resonator in the present embodiment is 80nm, the thickness of the substrate 2 is 350 μm, the thickness of the piezoelectric layer 1 is λ, and the thickness of the oxide layer 4 is 0.1λ -0.8λ, 1.2λ -1.4λ, or 1.8λ, the electromechanical coupling coefficient K of the resonator 2 ≥10％，FOM≥52。
Fig. 7 is a schematic diagram showing the change of the electromechanical coupling coefficient of the resonator according to the present application with the thickness of the oxide layer in the case where the electrode thickness is 180nm. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the oxide layer 4. Fig. 7 is drawn by: keeping the parameters of 180nm for the thickness of the electrode 3 of the resonator, 350 μm for the thickness of the substrate 2, and λ for the thickness of the piezoelectric layer 1 constant, varying the thickness of the oxide layer 4 in the range of 0.1λ -2λ, and measuring f for resonators having oxide layers 4 of different thicknesses s And f p And is based on f s And f p Calculating the electromechanical coupling coefficient K 2 To draw. As shown in fig. 7, the electromechanical coupling coefficient of the resonator continues to decrease as the thickness of the oxide layer 4 increases. The electromechanical coupling coefficient is maximum at a thickness of the oxide layer 4 of 0.2λ. When the thickness of the electrode 3 of the resonator in this embodiment is 180nm, the thickness of the substrate 2 is 350 μm, the thickness of the piezoelectric layer 1Thickness lambda and thickness of oxide layer 4 of 0.2lambda-2lambda, electromechanical coupling coefficient K of resonator 2 ≥15％，FOM≥45。
Fig. 8 is a schematic diagram showing the variation of the quality factor of the resonator according to the present application with the thickness of the substrate. Wherein the ordinate represents the electromechanical coupling coefficient K 2 The abscissa indicates the thickness of the substrate 2. Fig. 8 is drawn by: the parameters of 80nm thickness of the electrode 3 of the resonator, λ thickness of the piezoelectric layer 1, and 0.1λ thickness of the oxide layer 4 were kept unchanged, the thickness of the substrate 2 was varied in the range of 350 μm to 500 μm, and the quality factor Q was measured and calculated for resonators having substrates 2 of different thicknesses to draw. As shown in fig. 8, as the thickness of the substrate 2 increases, the quality factor Q of the resonator continues to decrease. When the electrode thickness of the resonator of this embodiment is 80nm, the substrate thickness is 350 μm to 500 μm, the oxide layer thickness is 0.1λ, and the piezoelectric layer thickness is λ, the quality factor Q of the resonator is not less than 280.
Fig. 9 is a schematic diagram showing the change of the quality factor of the resonator according to the present application with the thickness of the piezoelectric layer. Wherein the ordinate indicates the quality factor Q and the abscissa indicates the thickness of the piezoelectric layer 1. Fig. 9 is drawn by: the parameters of 80nm in thickness of the electrode 3 of the resonator, 350 μm in thickness of the substrate 2, and 0.1λ in thickness of the oxide layer 4 were kept unchanged, the thickness of the piezoelectric layer 1 was varied in the range of 0.1λ to 2λ, and the quality factor Q was measured and calculated for the resonators having the piezoelectric layers 1 of different thicknesses to draw. As shown in fig. 9, as the thickness of the piezoelectric layer 1 increases, the quality factor Q of the resonator increases spirally. When the thickness of the electrode 3 of the resonator of the present embodiment is 80nm, the thickness of the substrate 2 is 350 μm, the thickness of the oxide layer 4 is 0.1λ, and the thickness of the piezoelectric layer 1 is 0.λ to 2λ, the quality factor Q of the resonator is not less than 220.
Fig. 10 is a schematic diagram showing the change of the quality factor of the resonator according to the present application with the thickness of the oxide layer. Wherein the ordinate indicates the quality factor Q and the abscissa indicates the thickness of the oxide layer 4. Fig. 10 is drawn by: the parameters of 80nm in thickness of the electrode 3 of the resonator, 350 μm in thickness of the substrate 2, and λ in thickness of the piezoelectric layer 1 were kept unchanged, the thickness of the oxide layer 4 was varied in the range of 0.1λ to 2λ, and the quality factor Q was measured and calculated for resonators having oxide layers 4 of different thicknesses to draw. As shown in fig. 10, as the thickness of the oxide layer 4 increases, the quality factor Q of the resonator is normally distributed. When the thickness of the electrode 3 of the resonator of the present embodiment is 80nm, the thickness of the substrate 2 is 350 μm, the thickness of the piezoelectric layer 1 is λ, and the thickness of the oxide layer 4 is 0.1λ -0.8λ, 1.2λ -1.4λ, or 1.8λ, the quality factor Q is not less than 555.
Fig. 11 is a schematic diagram showing the change of the quality factor of the resonator according to the present application with the thickness of the oxide layer in the case where the electrode thickness is 180nm. Wherein the ordinate indicates the quality factor Q and the abscissa indicates the thickness of the oxide layer 4. Fig. 11 is drawn by: the parameters of 180nm in thickness of the electrode 3 of the resonator, 350 μm in thickness of the substrate 2, and λ in thickness of the piezoelectric layer 1 were kept unchanged, the thickness of the oxide layer 4 was varied in the range of 0.1λ to 2λ, and the quality factor Q was measured and calculated for resonators having oxide layers 4 of different thicknesses to draw. As shown in fig. 11, as the thickness of the oxide layer 4 increases, the Q value is normally distributed. When the thickness of the electrode 3 of this embodiment is 180nm, the thickness of the substrate 2 is 350 μm, the thickness of the piezoelectric layer 1 is λ, and the thickness of the oxide layer 4 is 0.2λ -2λ, the quality factor Q of the resonator is greater than or equal to 279.
Fig. 12 is a schematic diagram showing changes in electromechanical coupling coefficient and quality factor of a resonator according to the present application with thicknesses of a substrate, a piezoelectric layer, and an oxide layer. As can be seen from fig. 12, the center frequency f of the resonator 0 (center frequency f 0 = (antiresonance frequency f p +resonant frequency f s ) And/2) is substantially around 2 GHz.
From the above, it can be understood that, for the resonator using the novel piezoelectric material PMNT62/38 material as the piezoelectric layer in the present embodiment:
1. when the thickness of the electrode 3 is 80nm, the thickness of the substrate 2 is 350 μm to 500 μm, the thickness of the piezoelectric layer 1 is 0.1λ to 2.0λ, and the thickness of the oxide layer 4 is 0.1λ to 0.8λ, 1.2λ to 1.4λ, or 1.8λThe electromechanical coupling coefficient K of the resonator 2 More than or equal to 10 percent, the resonator with large bandwidth can be obtained;
2. when the thickness of the electrode 3 is 180nm, the thickness of the substrate 2 is 350 μm, the thickness of the piezoelectric layer 1 is λ, and the thickness of the oxide layer 4 is 0.1λ -2λ, the electromechanical coupling coefficient K of the resonator 2 More than or equal to 15 percent, the resonator with large bandwidth can be obtained;
3. when the thickness of the electrode 3 is 80nm, the thickness of the substrate 2 is 350 μm to 500 μm, the thickness of the piezoelectric layer 1 is λ, and the thickness of the oxide layer 4 is 0.4λ to 2.0λ, the electromechanical coupling coefficient K of the resonator 2 More than or equal to 26 percent, the resonator with large bandwidth and no stray can be obtained;
4. when the thickness of the electrode 3 is 80nm, the thickness of the substrate 2 is 350 μm to 375 μm, the thickness of the piezoelectric layer 1 is lambda, and the thickness of the oxide layer 4 is 0.1lambda, the electromechanical coupling coefficient K of the resonator 2 More than or equal to 29 percent, FOM is more than or equal to 98 percent, and the resonator with large bandwidth, no stray and higher FOM can be obtained.
Example 2 ]
Hereinafter, a method for manufacturing a resonator according to the present application will be described in detail with reference to fig. 13 and 14.
Fig. 13 is a schematic view of a method of manufacturing a resonator according to the present embodiment, and fig. 14 is a flowchart of a method of manufacturing a resonator according to the present embodiment.
The method of manufacturing the resonator of the present embodiment starts in step S1401. In this step S1401, as illustrated by a in fig. 13, a substrate 22 can be provided. The material of the substrate 22 may be a high acoustic velocity layer material, preferably SiC, siN, diamond, si, or the like. The thickness of the substrate 22 may be adjusted according to the product design, and is preferably 350 μm to 500 μm.
Next, in step S1402, the piezoelectric layer 21 may be bonded to the substrate 22 by low temperature bonding, as shown by b in fig. 13. As one example, the low-temperature bonding may be bonding using a bonding material such as epoxy, metal, or the like as a bonding layer after polishing (such as Chemical Mechanical Polishing (CMP)) the bonding surface of the substrate 22 and the piezoelectric layer 21. In performing the low temperature bonding, for example,the bonding temperature is less than or equal to 300 ℃. The material of the piezoelectric layer 21 may be lead-based composite perovskite relaxor ferroelectric single crystal (1-x) Pb (Mg) 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMNT) material. In the present embodiment, as the piezoelectric layer material of the resonator, for the PMNT material, a piezoelectric material of the formula (1-x) Pb (Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 X in (2) is preferably in the range of 0.30 to 0.35. As an example, the material of the piezoelectric layer 21 is further preferably a material having a chemical formula of 0.62Pb (Mg 1/ 3 Nb 2/3 )O 3 -0.38PbTiO 3 The PMNT single crystal material (hereinafter referred to as PMNT 62/38) having a polarization direction of [001]]Direction. As an example, the piezoelectric layer 21 may be manufactured by various processes such as thinning a piezoelectric wafer. The thickness of the piezoelectric layer 21 may be determined according to the wavelength λ of the acoustic wave excited by the electrode finger, and may be, for example, 0.1λ to 2λ. The thickness of the piezoelectric layer 21 is preferably λ.
Then, in step S1403, after the low-temperature bonding is completed, the structure formed by the piezoelectric layer 21 and the substrate 22 is cooled, as shown by c in fig. 13.
Then, in step S1404, as shown by d in fig. 13, the electrode 23 is deposited on the surface of the piezoelectric layer 21 by a method such as evaporation, sputtering, or the like. The duty ratio of the electrode 23 (duty ratio=electrode width/(electrode width+electrode pitch)) may be 0.5. The number of electrodes 23 may be adjusted according to the product design, for example, the number of pairs of electrodes 23 is preferably 1000 pairs. The electrode 23 may be made of a metal or an alloy such as Ti, al, cu, au, pt, ag, pd, ni, or a laminate of these metals or alloys. The thickness of the electrode 23 may be 80nm to 180nm, preferably 180nm. The structure of the electrode 23 may be a single-layer structure or a multi-layer structure. The structure of the electrode 23 is preferably a multilayer structure. The electrode 23 is further preferably formed of three metal layers of Ni, cu, al, or three metal layers of Ti, mo, al.
In step S1405, as shown by e in fig. 13, an oxide layer 24 is deposited on the electrode 23 by a method such as PECVD, PVD, CVD, MOCVD. The material of the oxide layer 24 may be an oxide, preferably SiO 2 SiFO, siOC, etc. The thickness of the oxide layer 24 may be determined according to the wavelength λ of the acoustic wave excited by the electrode finger, and may be, for example, 0.1λ to 2λ. The thickness of the oxide layer 24 is preferably 0.2λ.
So far, the final structure is formed and the method ends.
In certain embodiments, the operations included in the methods of the embodiments described above may occur simultaneously, substantially simultaneously, or in a different order than shown in the figures.
In some embodiments, all or part of the operations included in the methods in the embodiments described above may optionally be performed automatically by a program. In one example, the application may be implemented as a program product stored on a computer readable storage medium for use with a computer system. The program(s) of the program product include the functions of the embodiments (including the methods described herein). Illustrative computer-readable storage media include, but are not limited to: (i) A non-writable storage medium (e.g., a read-only memory device within a computer such as a CD-ROM disk readable by a CD-ROM machine, flash memory, ROM chip or any type of solid state non-volatile semiconductor memory) on which information is permanently stored; and (ii) a writable storage medium (e.g., a disk storage or hard disk drive or any type of solid state random access semiconductor memory) on which alterable information is stored. Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present application.
The foregoing describes in detail alternative embodiments of the present application. It will be appreciated that various embodiments and modifications may be resorted to without departing from the broad spirit and scope of the application. Many modifications and variations will be apparent to those of ordinary skill in the art in light of the concepts of the application without undue burden. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by a person skilled in the art according to the inventive concept shall fall within the scope of protection defined by the claims of the present application.
Claims (7)
1. A resonator, comprising:
a substrate;
a piezoelectric layer formed of a PMNT material and formed on the substrate;
an electrode formed on the piezoelectric layer; and
an oxide layer formed on the electrode and covering the electrode,
wherein the PMNT material is 0.62Pb (Mg 1/3 Nb 2/3 )O 3 -0.38PbTiO 3 The thickness of the electrode is 80nm to 180nm, the thickness of the substrate is 350 μm to 500 μm, the thickness of the piezoelectric layer is in the range of 0.1λ to 2λ, and the thickness of the oxide layer is in the range of 0.1λ to 2λ, where λ is the wavelength of the acoustic wave excited by the electrode.
2. The resonator of claim 1, wherein the PMNT material is a single crystal material.
3. The resonator of claim 1, wherein the electrode is formed from one or more of Ti, al, cu, au, pt, ag, pd and Ni.
4. The resonator of claim 1, wherein the substrate is formed of one or more of SiC, siN, diamond, and Si.
5. The resonator of claim 1, wherein the oxide layer is formed of SiO 2 One or more of SiFO and SiOC.
6. A method of manufacturing a resonator, comprising:
bonding a piezoelectric layer formed of a PMNT material to a substrate layer at a bonding temperature;
cooling the piezoelectric layer and the substrate layer after bonding is completed;
depositing an electrode on the piezoelectric layer; and
an oxide layer is deposited on the electrode(s),
wherein the PMNT material is 0.62Pb (Mg 1/3 Nb 2/3 )O 3 -0.38PbTiO 3 The thickness of the electrode is 80nm to 180nm, the thickness of the substrate layer is 350 μm to 500 μm, the thickness of the piezoelectric layer is in the range of 0.1λ to 2λ, and the thickness of the oxide layer is in the range of 0.1λ to 2λ, where λ is the wavelength of the acoustic wave excited by the electrode.
7. The method of manufacturing of claim 6, wherein the bonding temperature is less than or equal to 300 ℃.
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| JP2002141768A (en) * | 2000-11-02 | 2002-05-17 | Alps Electric Co Ltd | Surface acoustic wave element |
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| JP2009201101A (en) * | 2008-01-21 | 2009-09-03 | Panasonic Electric Works Co Ltd | Baw resonator and manufacturing method thereof |
| CN105119585A (en) * | 2010-06-17 | 2015-12-02 | 天工松下滤波方案日本有限公司 | Elastic wave element |
| CN111262543A (en) * | 2020-04-01 | 2020-06-09 | 河源市众拓光电科技有限公司 | Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof |
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| JP2002141768A (en) * | 2000-11-02 | 2002-05-17 | Alps Electric Co Ltd | Surface acoustic wave element |
| CN1647923A (en) * | 2004-01-26 | 2005-08-03 | 精工爱普生株式会社 | Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer |
| JP2009201101A (en) * | 2008-01-21 | 2009-09-03 | Panasonic Electric Works Co Ltd | Baw resonator and manufacturing method thereof |
| CN105119585A (en) * | 2010-06-17 | 2015-12-02 | 天工松下滤波方案日本有限公司 | Elastic wave element |
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Denomination of invention: The manufacturing method of resonators and resonators Granted publication date: 20231024 Pledgee: CITIC Bank Co.,Ltd. Guangzhou Branch Pledgor: Guangdong guangnaixin Technology Co.,Ltd. Registration number: Y2024980008987 |