CN207896123U - A kind of piezoelectric device - Google Patents
A kind of piezoelectric device Download PDFInfo
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- CN207896123U CN207896123U CN201820198583.7U CN201820198583U CN207896123U CN 207896123 U CN207896123 U CN 207896123U CN 201820198583 U CN201820198583 U CN 201820198583U CN 207896123 U CN207896123 U CN 207896123U
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- 238000002425 crystallisation Methods 0.000 claims abstract description 43
- 230000008025 crystallization Effects 0.000 claims abstract description 43
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
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- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
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- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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Abstract
The utility model provides a kind of piezoelectric device, including top electrode, piezoelectric layer and the lower electrode set gradually from top to bottom, and piezoelectric layer includes for generating the preferred piezoelectric layer of the c-axis of longitudinal wave；The piezoelectric layer further includes being arranged the preferred piezoelectric layer of c-axis is lateral, the preferred piezoelectric layer of non-c-axis for eliminating lateral wave；The crystallization property of the preferred piezoelectric layer of non-c-axis is different from the crystallization property of the preferred piezoelectric layer of c-axis；This piezoelectric device further includes the crystal orientation control layer for controlling the crystallization property that the preferred piezoelectric layer of non-c-axis is formed in growth.The utility model passes through in the same piezoelectric layer, form the film of two or more crystallization property, due to the different material of crystallization property, its sound wave transfer impedance also can be different, therefore in the laterally disposed non-preferred piezoelectric layer of c-axis of the preferred piezoelectric layer of c-axis, the resonance of lateral wave or spurious modes that the preferred piezoelectric layer of c-axis generates can be eliminated.
Description
Technical field
The utility model belongs to field of semiconductor devices, and in particular to a kind of piezoelectric device.
Background technology
Piezoelectric device can be applied to the devices such as bulk accoustic wave filter, surface acoustic wave filter, sensor and actuator,
Wherein acoustic wave filter can be divided into bulk accoustic wave filter and surface acoustic wave filter.Under the development of LTE mechanicss of communication, Zhong Duopin
Section concentrates on the same mobile terminal, in order to make the interference of different frequency range reduce, therefore the squareness factor and passband of filter
Insertion Loss must be promoted.
Since the piezoelectric layer of piezoelectric device is an elastomer, acoustic wave device can use the mode of oscillation of piezoelectric layer longitudinal direction,
As shown in Figure 1, forming a longitudinal wave 102 in the range of 101 thickness of piezoelectric layer；It, can also companion other than this longitudinal wave 102
With lateral mode of oscillation, i.e. lateral wave 103 is generated, the resonant frequency that these lateral mode of oscillations are formed can be filtered in sound wave
Ripple is generated in the passband of device, influences device property, is acoustic wave device so inhibiting spurious modes and improving the Q values of resonator
Part needs to overcome the problems, such as.
Utility model content
The technical problems to be solved in the utility model is：A kind of piezoelectric device is provided, lateral wave or parasitism can be eliminated
The resonance of mode.
The technical solution that the utility model is taken to solve above-mentioned technical problem is：A kind of piezoelectric device, including from upper
Top electrode, piezoelectric layer and the lower electrode set gradually under, the piezoelectric layer include preferably being pressed for generating the c-axis of longitudinal wave
Electric layer；It is characterized in that：
The piezoelectric layer further include be arranged the preferred piezoelectric layer of c-axis it is lateral, preferably pressed for eliminating the non-c-axis of lateral wave
Electric layer；The crystallization property of the preferred piezoelectric layer of non-c-axis is different from the crystallization property of the preferred piezoelectric layer of c-axis；
This piezoelectric device further includes the crystalline substance for controlling the crystallization property that the preferred piezoelectric layer of non-c-axis is formed in growth
To control layer (Orientation Control Layer, OCL).
By said program, the crystal orientation control layer is arranged in the upper surface and/or lower surface of lower electrode.
By said program, the lower base part is additionally provided with sacrificial layer.
By said program, the crystal orientation control layer is arranged in the sacrificial layer surface contacted with lower electrode, the lower electricity
Pole includes noncrystalline preferred electrode layer between crystal orientation control layer and the preferred piezoelectric layer of non-c-axis and is located at sacrificial layer and c-axis
It is preferred that the crystallization preferred electrode layer between piezoelectric layer.
By said program, the crystal orientation control layer is formed by changing surface roughness.
By said program, the crystal orientation control layer is and the lower unmatched metal layer of electrode lattice.
By said program, the material of the piezoelectric layer is one kind in AlN, ZnO, PZT, BST.
By said program, the material of the top electrode and lower electrode is one kind in Mo, Pt, Ru.
By said program, the material of the sacrificial layer is SiO2, in Si, TiW, Cu, PSG, BSG and photoresist one
Kind.
The beneficial effects of the utility model are：By in the same piezoelectric layer, forming the film of two or more crystallization property,
Due to the different material of crystallization property, sound wave transfer impedance also can be different, therefore in the laterally disposed non-of the preferred piezoelectric layer of c-axis
The preferred piezoelectric layer of c-axis can eliminate the resonance of lateral wave or spurious modes that the preferred piezoelectric layer of c-axis generates.
Description of the drawings
Fig. 1 is the vibration principle figure of existing piezoelectric membrane.
Fig. 2 is the vibration principle figure of the utility model.
Fig. 3 is the structural schematic diagram of one embodiment of the utility model.
Fig. 4 is the structural schematic diagram of another embodiment of the utility model.
Fig. 5 is that Mo FWHM are 6.930Figure.
Fig. 6 is that Mo FWHM are 4.330Figure.
In figure：101- piezoelectric layers, 102- longitudinal waves, 103- lateral waves, the preferred piezoelectric layer of 201-c axis, 202- is non-, and c-axis is preferred
Piezoelectric layer, 203- longitudinal waves, 204- lateral waves, the weak lateral wave of the preferred piezoelectric layer of the non-c-axis of 205-, the preferred piezoelectric layer of 206-c axis are weak
Lateral wave, the preferred piezoelectric layer of 301-c axis, the preferred piezoelectric layer of the non-c-axis of 302-, 303- crystal orientation control layers, electrode under 304-, on 305-
Electrode, the preferred piezoelectric layer of 401-c axis, the preferred piezoelectric layer of the non-c-axis of 402-, 403- crystal orientation control layers, electrode under 404-, 4041- knots
Brilliant preferred electrode, the noncrystalline preferred electrodes of 4042-, 405- top electrodes, 406- sacrificial layers.
Specific implementation mode
The utility model is described further with reference to specific example and attached drawing.
As shown in Fig. 2, the preferred piezoelectric layer of c-axis 201 is in the range of thickness other than forming a longitudinal wave 203, also
Lateral lateral wave 204 can be supervened, the purpose of this utility model is that a suction is formed on the path that lateral wave 204 transmits
Wave energy region is received, i.e., the piezoelectric membrane crystallization property of the non-preferred piezoelectric layer 202 of c-axis, this region is different from the preferred piezoelectric layer of c-axis
201, it can decay because of the difference of material crystalline characteristic when lateral wave 204 is transmitted to non-c-axis preferred piezoelectric layer 202, inhibit horizontal
It resonates generated spurious modes to wave 204.The utility model can form at least more than one not syncrystallization spy over the piezoelectric layer
Property region, to reach the resonance for eliminating lateral wave or spurious modes.
Specifically, the utility model provides a kind of piezoelectric device, including top electrode, the pressure set gradually from top to bottom
Electric layer and lower electrode, the piezoelectric layer include for generating the preferred piezoelectric layer of the c-axis of longitudinal wave；The piezoelectric layer further includes
It is arranged the preferred piezoelectric layer of c-axis is lateral, the preferred piezoelectric layer of non-c-axis for eliminating lateral wave；The preferred piezoelectric layer of non-c-axis
Crystallization property it is different from the crystallization property of the preferred piezoelectric layer of c-axis.
The method for forming different crystallization properties mainly forms different roughness or difference on the surface that film deposits
Crystallization direction, therefore this piezoelectric device further includes for controlling the preferred piezoelectric layer of non-c-axis crystallization for being formed in growth
The crystal orientation control layer of characteristic.
The method for usually preparing piezoelectric device is to form piezoelectric layer and top electrode on the bottom electrode successively, and prepare this practicality
The method of novel piezoelectric device is initially formed before forming piezoelectric layer for controlling the preferred piezoelectric layer of non-c-axis shape in growth
At the crystal orientation control layer of crystallization property form two or more crystallizations spies in the same piezoelectric layer to when forming piezoelectric layer
Property film, the film of one of which crystallization property is used as the preferred piezoelectric layers of non-c-axis as the preferred piezoelectric layer of c-axis, others.
There are many method for forming crystal orientation control layer, as long as the same piezoelectric layer is enabled to form two or more crystallization properties
Film.Several embodiments are given below to further illustrate.
Embodiment one：
As shown in figure 3, a kind of piezoelectric device, including the top electrode 305, piezoelectric layer and the lower electrode that set gradually from top to bottom
304, the piezoelectric layer includes for generating the preferred piezoelectric layer 301 of the c-axis of longitudinal wave, and setting is in the preferred piezoelectric layer of c-axis 301
Laterally, the preferred piezoelectric layer of non-c-axis 302 for eliminating lateral wave；The crystallization property and c of the preferred piezoelectric layer of the non-c-axis 302
The crystallization property of the preferred piezoelectric layer of axis 301 is different；This piezoelectric device further includes in the case where being contacted with the preferred piezoelectric layer of non-c-axis 302
304 surface modification surface roughness of electrode and the crystal orientation control layer 303 formed, exist for controlling the preferred piezoelectric layer of non-c-axis
The crystallization property formed when growth.The roughness on lower 304 surface of electrode is 0-2nm, and the roughness of crystal orientation control layer 303 is 1nm-
1μm。
The method for preparing the piezoelectric device described in the present embodiment, in a part of surface modification rough surface of lower electrode 304
Degree forms the crystal orientation control layer 303, to which when forming piezoelectric layer, it is special to form two or more crystallizations in the same piezoelectric layer
Property film, one of which crystallization property is as the preferred piezoelectric layer 301 of c-axis, and others are as the preferred piezoelectric layer of non-c-axis 302；Most
Deposit top electrode 305 over the piezoelectric layer afterwards.
For following electrode 304 by taking Mo as an example, crystal orientation control layer 303 is the coarse surfaces Mo, and piezoelectric layer is AlN films.It is coarse
The surfaces Mo can allow the halfwidth of AlN（FWHM）Become larger, FWHM, which becomes larger, indicates that crystallization property is deteriorated, therefore lateral wave here can
It is absorbed, and then reduces the generation of spurious modes.
The growth mechanism of AlN films is different, to obtain the AlN films of c- axis orientation, usually on the films such as Mo, Pt, Cr
Growing AIN.The crystal orientation control layer of these metals is formed in the films such as Mo, Pt, Cr specific region.The mode that crystal orientation control layer is formed
Mode, Laser Surface Treatment, the solution wet etching etc. of ion bombardment can be used.
The material category of the preferred piezoelectric layer of c-axis 301 has：AlN <002>, ZnO<002>, PZT<111>, BST<110
>；The preferred piezoelectric layer of non-c-axis 302 is then the same material of different crystal orientations.
It is suitable as the type of the metal material of electrode 304 under acoustic wave device：Mo <110>, Pt<111>, Ru<001>
Deng.
Embodiment two：
The basic principle of the present embodiment is identical as embodiment one, the difference is that：As shown in figure 4, a kind of piezoelectricity device
Part, including the top electrode 405, piezoelectric layer, lower electrode 404 and the sacrificial layer 406 that set gradually from top to bottom；This piezoelectric device also wraps
Include the crystal orientation control layer 403 by being formed by 406 surface modification surface roughness of sacrificial layer；The shape on crystal orientation control layer 403
At lower electrode 404 be noncrystalline preferred electrode layer 4042, the lower electricity formed on sacrificial layer 406 surface of the amorphous to control layer
Pole 404 is crystallization preferred electrode layer 4041；The piezoelectric layer formed on crystallization preferred electrode layer 4041 is for generating longitudinal wave
The preferred piezoelectric layer 401 of c-axis, the piezoelectric layer formed on noncrystalline preferred electrode layer 4042 is non-c for eliminating lateral wave
The preferred piezoelectric layer of axis 402.
A crystal orientation control layer 403 is formed on 406 surface of sacrificial layer, then descends electrode 404 in growth as surface
The difference of energy, crystallization property changes, by taking Mo electrodes as an example, when the crystallization of Mo is preferred<110>When being destroyed, grow up above
AlN can also form non-c-axis<002>Preferred crystallization；Therefore crystal orientation control layer 403 can also be made in the surface of sacrificial layer 406.
One of the utility model embodiment is as follows, when we are in sacrificial layer SiO2Surface, formed different thick
When rugosity surface, top Mo electrodes<110>FWHM can also become larger therewith, FWHM become larger indicate crystallization property be deteriorated, as table one,
Shown in Fig. 5 and Fig. 6, when the crystallization property of Mo is deteriorated, the AlN films crystallization property grown up above can also change correspondingly.
Table one：
The method for being used to prepare the piezoelectric device described in the present embodiment, first in a part of surface modification of sacrificial layer 406
Surface roughness forms the crystal orientation control layer 403；Change surface roughness specific method be：Ion bombardment, laser table
Any one in surface treatment, solution wet etching.
When forming lower electrode, using same metal with one-time process crystal orientation control layer 403 and sacrificial layer 406 table
Face forms lower electrode, and the lower electrode formed on crystal orientation control layer 403 is noncrystalline preferred electrode layer 4042, in non-crystal orientation control
The lower electrode that the sacrificial layer surface of layer is formed is crystallization preferred electrode layer 4041.
When forming piezoelectric layer, piezoelectric layer is formed on lower electrode 404 with one-time process using same material, wherein
The preferred piezoelectric layer 402 of non-c-axis is formed on noncrystalline preferred electrode layer 4042, and institute is formed on crystallization preferred electrode layer 4041
The preferred piezoelectric layer of the c-axis stated 401.
It is suitable as 406 material of sacrificial layer：SiO2, Si, TiW, Cu, PSG, BSG, photoresist, polymer etc..
Embodiment three：
The basic principle of the present embodiment is identical as embodiment one, the difference is that：The crystal orientation control layer setting
Between the lower electrode and the preferred piezoelectric layer of non-c-axis, crystal orientation control layer uses the metal different from lower electrode material.
A method of it being used to prepare the piezoelectric device described in the present embodiment, after a part for lower electrode is etched,
Lower electrode surface growth in etching and the lower unmatched metal layer of electrode lattice, as the crystal orientation control layer, thus
When forming piezoelectric layer, the film of two or more crystallization properties is formed in the same piezoelectric layer, in amorphous to the lower electrode of control layer
The piezoelectric layer of surface growth is the preferred piezoelectric layer of c-axis, and the piezoelectric layer grown on crystal orientation control layer is the preferred piezoelectric layer of non-c-axis.
Since usually there is AlN hexagonal structure, the AlN usually deposited on the films such as Mo, Pt to have<002>Crystal orientation, and
Due to Lattice Matching, the crystal orientation of the materials such as Cu, Ti and AlN's<011>Crystal orientation matches, therefore in this kind of deposited on materials AlN
Have<011>Crystal orientation.Therefore, if the lower electrode material of script is Mo, due to Mo's<110>It is preferred that AlN can be allowed to be easier shape
At<002>It is preferred that after Mo or Pt etching electrodes, the unmatched metal layer of lattices such as one layer of Cu or Ti of growth is as crystal orientation control
Preparative layer is then not easily formed<002>It is preferred that.Therefore, it is possible to select the material different from script electrode, different surfaces energy is formed
Interface makes the sedimentary condition of piezoelectric material different, to form the piezoelectric membrane of different crystallization properties.
Above example is merely to illustrate the design philosophy and feature of the utility model, in the art its object is to make
Technical staff can understand the content of the utility model and implement according to this, and the scope of protection of the utility model is not limited to above-mentioned implementation
Example.So it is all according to equivalent variations or modification made by the revealed principle of the utility model, mentality of designing, in this practicality
Within novel protection domain.
Claims (9)
1. a kind of piezoelectric device, including the top electrode, piezoelectric layer and the lower electrode that set gradually from top to bottom, the piezoelectric layer packet
Include the preferred piezoelectric layer of c-axis for generating longitudinal wave；It is characterized in that：
The piezoelectric layer further includes being arranged the preferred piezoelectric layer of c-axis is lateral, the preferred piezoelectricity of non-c-axis for eliminating lateral wave
Layer；The crystallization property of the preferred piezoelectric layer of non-c-axis is different from the crystallization property of the preferred piezoelectric layer of c-axis；
This piezoelectric device further includes the crystal orientation control for controlling the crystallization property that the preferred piezoelectric layer of non-c-axis is formed in growth
Preparative layer.
2. piezoelectric device according to claim 1, it is characterised in that：The crystal orientation control layer is arranged in the upper of lower electrode
Surface and/or lower surface.
3. piezoelectric device according to claim 1, it is characterised in that：The lower base part is additionally provided with sacrificial layer.
4. piezoelectric device according to claim 3, it is characterised in that：The crystal orientation control layer setting connects with lower electrode
Tactile sacrificial layer surface, the lower electrode include noncrystalline excellent between crystal orientation control layer and the preferred piezoelectric layer of non-c-axis
Select electrode layer and the crystallization preferred electrode layer between sacrificial layer and the preferred piezoelectric layer of c-axis.
5. piezoelectric device according to claim 2 or 4, it is characterised in that：The crystal orientation control layer is by changing surface
Roughness and formed.
6. piezoelectric device according to claim 2, it is characterised in that：The crystal orientation control layer be with lower electrode lattice not
The metal layer matched.
7. piezoelectric device as claimed in any of claims 1 to 4, it is characterised in that：The material of the piezoelectric layer
For one kind in AlN, ZnO, PZT, BST.
8. piezoelectric device as claimed in any of claims 1 to 4, it is characterised in that：The top electrode and lower electricity
The material of pole is one kind in Mo, Pt, Ru.
9. piezoelectric device according to claim 3 or 4, it is characterised in that：The material of the sacrificial layer is SiO2、Si、
One kind in TiW, Cu, PSG, BSG and photoresist.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820198583.7U CN207896123U (en) | 2018-02-05 | 2018-02-05 | A kind of piezoelectric device |
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| CN201820198583.7U CN207896123U (en) | 2018-02-05 | 2018-02-05 | A kind of piezoelectric device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231995A (en) * | 2018-02-05 | 2018-06-29 | 武汉衍熙微器件有限公司 | A kind of piezoelectric device and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231995A (en) * | 2018-02-05 | 2018-06-29 | 武汉衍熙微器件有限公司 | A kind of piezoelectric device and preparation method thereof |
| CN108231995B (en) * | 2018-02-05 | 2024-04-19 | 武汉衍熙微器件有限公司 | Piezoelectric device and preparation method thereof |
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