CN108054206A - 一种横向元胞结构的功率器件终端结构及其制作方法 - Google Patents

一种横向元胞结构的功率器件终端结构及其制作方法 Download PDF

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CN108054206A
CN108054206A CN201711003546.2A CN201711003546A CN108054206A CN 108054206 A CN108054206 A CN 108054206A CN 201711003546 A CN201711003546 A CN 201711003546A CN 108054206 A CN108054206 A CN 108054206A
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doped region
substrate
structure cell
power device
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崔磊
金锐
潘艳
赵岩
温家良
徐向前
刘双宇
周哲
朱涛
刘江
徐哲
赵哿
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Global Energy Interconnection Research Institute
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Abstract

本发明提供了一种横向元胞结构的功率器件终端结构及其制作方法，以绝缘栅双极型晶体管(IGBT)为例，该结构包括衬底、背面掺杂区、正面掺杂区、隔离绝缘层、发射极、集电极、栅电极结构。本发明提供的一种横向元胞代替终端的垂直型功率芯片结构设计及其制作方法，将垂直型功率半导体器件原有的终端结构设计为横向器件结构，可以有效利用终端面积形成额外的通流区域，增加芯片的通流能力。

Description

一种横向元胞结构的功率器件终端结构及其制作方法
技术领域
本发明涉及一种导体芯片结构，具体涉及一种横向元胞结构的功率半导体芯片结构及其制作方法。
背景技术
功率半导体芯片(如IGBT、MOSFET、MCT等)由有源区和终端区组成，有源区为芯片的主要通流区域，为降低半导体芯片表面电场而设计的耐压结构终端区环绕在有源区***。有源区和终端区的过渡区域，环绕芯片一周为栅汇流条，用来将栅PAD信号均匀传送到每个元胞处。
以目前常见的IGBT为例，IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管)器件的结构与功率MOSFET(metallic oxide semiconductor fieldeffecttransistor金属氧化物半导体场效应晶体管)的结构十分相似，主要差异是IGBT用P+基片取代了MOSFET的N+缓冲层，P+和N-区之间创建了一个PN结。共有三个极：栅极G、发射极E和集电极C。IGBT器件是电压全控型器件，除了具有低功耗、高频率、高电压、大电流等优点外，其需要的驱动电路与控制电路简单，驱动功耗低，被认为是电力电子技术第三次革命的代表性的产品，是电能智能化管理和节能减排的核心器件。
随着经济的持续高速发展，能源危机日趋严重，供需之间存在着严重矛盾，发展节能产业与新能源产业迫在眉睫。电力电子器件在节能方面扮演着重要的角色，是机械自动化、控制智能化的关键部件，也是节约电能的半导体器件。因此，大力发展电力电子器件的设计制造以及模块的开发和应用是节约电能的重要措施。作为电力电子器件代表的IGBT是提高整机***性能指标和节能指标的首选产品。
终端结构的设计是半导体器件的关键技术之一，与器件的击穿电压、通态压降等参数密切相关。芯片面积增大到一定程度时，芯片内部存在缺陷的概率明显升高，芯片成品率随之大幅下降，因此芯片面积受材料缺陷限制。芯片面积一定的情况下，终端效率越高，面积越小，有源区的通流面积则越大，通态压降越低。同时，器件耐压等级越高，终端尺寸越大，所以高压器件终端的效率直接影响芯片的通态压降。
发明内容
本发明的目的在于克服现有技术的不足，以IGBT为例，本发明针对终端结构设计了具有通流能力的横向元胞结构，可以有效利用终端面积形成额外的通流区域，增加芯片的通流能力。
为了达到上述目的，本发明提供了下述技术方案：
一种横向元胞结构的功率器件终端结构，包括：
衬底101和在衬底101之上设置有正面掺杂区103和104、隔离绝缘层107、栅电极105、发射极106和截止环场板109，所述衬底101之下设有集电极108；
其中，栅电极105与衬底101电隔离；发射极106与正面掺杂区103和104欧姆接触；集电极108与背面掺杂区102欧姆接触；截止环场板109与正面掺杂区103欧姆接触；
衬底101的中心区域设有垂直元胞结构110；
衬底101的边缘区域设有横向元胞结构111。
一种横向元胞结构的功率器件终端结构的第一优选方案，
衬底101为n型，背面掺杂区102和正面掺杂区104为p型，正面掺杂区103为n型。
一种横向元胞结构的功率器件终端结构的第二优选方案，
衬底101为p型，背面掺杂区102和正面掺杂区104为n型，正面掺杂区103为p型。
一种横向元胞结构的功率器件终端结构的第三优选方案，
横向元胞结构111中的栅电极105及垂直型元胞结构110中的栅电极105同时形成。
一种横向元胞结构的功率器件终端结构的第四优选方案，
横向元胞结构111中的正面掺杂区103与垂直型元胞结构110中的正面掺杂区103同时形成。
一种横向元胞结构的功率器件终端结构的第五优选方案，
横向元胞结构111用于横向MOSFET、IGBT、超结器件或双极型晶体管结构。
一种横向元胞结构的功率器件终端结构的第六优选方案，
终端结构用于基于Si、SiC、GaN半导体材料的IGBT、MCT和BJT三端器件。
一种横向元胞结构的功率器件终端结构制作方法，包括如下步骤：
(1)在衬底101的下表面形成终端区背面掺杂区102；
(2)在衬底101的上表面形成终端区的正面掺杂区103和104；
(3)在衬底101的上表面沉积、刻蚀依次形成隔离绝缘层107、栅电极105、发射极106和截止环场板109结构；
(4)在衬底的下表面形成集电极108结构。
与最接近的现有技术相比，本发明提供的技术方案具有以下优异效果：
1、本发明提供的垂直型高压功率器件高效终端结构，具有效率高、隔离绝缘层应力小和稳定性好的优点；
2、本发明提供的垂直型高压功率器件高效终端结构的制作方法，具有易加工的优点。
附图说明
图1：本发明实施例中一种横向元胞代替终端的垂直型功率芯片结构示意图。
其中，101衬底；102背面掺杂区；103、104正面掺杂区；105栅电极；106发射极；107隔离绝缘层；108集电极；109截止环场板；110垂直元胞结构；111横向元胞结构。
具体实施方式
下面结合附图1和具体实施例作进一步详细说明，对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本实施例中一种横向元胞结构的功率器件终端结构，包括
衬底101；
正面掺杂区103、104，其设置在所述衬底101的上表面；
背面掺杂区102，其设置在所述衬底101的下表面；
隔离绝缘层107，其设置在所述衬底101的上表面；
栅电极105，其设置在所述衬底101的上表面，与衬底电隔离；
发射极106，其设置在所述衬底101的上表面，与正面掺杂区103、104欧姆接触；
集电极108，其设置在所述衬底101的下表面，与背面掺杂区102欧姆接触；
截止环场板109，其设置在所述衬底101的上表面，与掺杂区103欧姆接触；
垂直元胞结构110，其设置在所述衬底101的中心区域；
横向元胞结构111，其设置在所述衬底101的边缘。
实施例1
若衬底101为n型，则掺杂区102、104为p型，掺杂区103为n型；
横向元胞结构111可以是横向MOSFET、IGBT、超结器件、双极型晶体管等结构；横向元胞结构111中栅电极及垂直型元胞结构110中的所述栅电极105同时形成；横向元胞结构111中掺杂区103可与垂直型元胞结构110中掺杂区103同时形成。
该结构可适用于多种材料、多种类型器件，如基于Si、SiC、GaN等半导体材料研制的IGBT、MCT、BJT等三端器件。
实施例2
若衬底101为p型，则掺杂区102、104为n型，掺杂区103为p型；
横向元胞结构111可以是横向MOSFET、IGBT、超结器件、双极型晶体管等结构；横向元胞结构111中栅电极及垂直型元胞结构110中的所述栅电极105同时形成；横向元胞结构111中掺杂区103可与垂直型元胞结构110中掺杂区103同时形成。
该结构可适用于多种材料、多种类型器件，如基于Si、SiC、GaN等半导体材料研制的IGBT、MCT、BJT等三端器件。
本发明中可以按照下述步骤制备横向元胞代替终端的垂直型功率芯片，具体为：
1、在衬底的下表面形成终端区背面掺杂102。
2、在衬底的上表面形成终端区的正面掺杂103、104。
3、在衬底的上表面沉积、刻蚀依次形成隔离绝缘层102、栅电极105、发射极107截止环场板109结构。
4、在衬底的下表面形成电极结构108。
以上实施例仅用以说明本发明的技术方案而非对其进行限制，所属领域的普通技术人员应当理解，参照上述实施例可以对本发明的具体实施方式进行修改或者等同替换，这些未脱离本发明精神和范围的任何修改或者等同替换均在申请待批的权利要求保护范围之内。

Claims (8)

1.一种横向元胞结构的功率器件终端结构，其特征在于，所述结构包括：
衬底(101)和在所述衬底(101)之上设置有正面掺杂区(103、104)、隔离绝缘层(107)、栅电极(105)、发射极(106)和截止环场板(109)，所述衬底(101)之下设有集电极(108)；
其中，所述栅电极(105)与所述衬底(101)电隔离；所述发射极(106)与所述正面掺杂区(103、104)欧姆接触；所述集电极(108)与所述背面掺杂区(102)欧姆接触；所述截止环场板(109)与所述正面掺杂区(103)欧姆接触；
所述衬底(101)的中心区域设有垂直元胞结构(110)；
所述衬底(101)的边缘区域设有横向元胞结构(111)。
2.如权利要求1所述的一种横向元胞结构的功率器件终端结构，其特征在于，
所述衬底(101)为n型，所述背面掺杂区(102)和所述正面掺杂区(104)为p型，所述正面掺杂区(103)为n型。
3.如权利要求1所述的一种横向元胞结构的功率器件终端结构，其特征在于，
所述衬底(101)为p型，所述背面掺杂区(102)和所述正面掺杂区(104)为n型，所述正面掺杂区(103)为p型。
4.如权利要求1所述的一种横向元胞结构的功率器件终端结构，其特征在于，
所述横向元胞结构(111)中的所述栅电极(105)及垂直型元胞结构(110)中的所述栅电极(105)同时形成。
5.如权利要求1所述的一种横向元胞结构的功率器件终端结构，其特征在于，
所述横向元胞结构(111)中的所述正面掺杂区(103)与所述垂直型元胞结构(110)中的所述正面掺杂区(103)同时形成。
6.如权利要求1所述的一种横向元胞结构的功率器件终端结构，其特征在于，
所述横向元胞结构(111)用于横向MOSFET、IGBT、超结器件或双极型晶体管结构。
7.如权利要求1所述的一种横向元胞结构的功率器件终端结构，其特征在于，
所述终端结构用于基于Si、SiC、GaN半导体材料的IGBT、MCT和BJT三端器件。
8.一种如权利要求1所述的横向元胞结构的功率器件终端结构制作方法，其特征在于，所述方法包括如下步骤：
(1)在衬底(101)的下表面形成终端区背面掺杂区(102)；
(2)在衬底(101)的上表面形成终端区的正面掺杂区(103、104)；
(3)在衬底(101)的上表面沉积、刻蚀依次形成隔离绝缘层(107)、栅电极(105)、发射极(106)和截止环场板(109)结构；
(4)在衬底的下表面形成集电极(108)结构。
CN201711003546.2A 2017-10-24 2017-10-24 一种横向元胞结构的功率器件终端结构及其制作方法 Pending CN108054206A (zh)

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