CN108008565A - A kind of preparation method of the quantum dot color filter based on self assembly - Google Patents
A kind of preparation method of the quantum dot color filter based on self assembly Download PDFInfo
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- CN108008565A CN108008565A CN201711258691.5A CN201711258691A CN108008565A CN 108008565 A CN108008565 A CN 108008565A CN 201711258691 A CN201711258691 A CN 201711258691A CN 108008565 A CN108008565 A CN 108008565A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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Abstract
The present invention relates to a kind of preparation method of the quantum dot color filter based on self assembly, first electrode is formed on underlay substrate first；Form black matrix；Quantum dot and surfactant mixed preparing be red, the charged slurry of green quantum dot or solution, the effect of surfactant are that quantum dot surface is modified, and the quantum dot after modification carries positive charge or negative electrical charge；Red quantum dot and green quantum dot are produced on respectively by silk-screen printing, transfer or inkjet printing methods the position of red green pixel point；Red, green pixel point places second electrode after being formed on pixel, electric field is added between the first electrode and the second electrode, the red green quantum dot allowed using the method for self assembly in red green pixel point is closely attached to first electrode surface under the action of electric field, quantum dot is set to be arranged closely together layer by layer, quantum dot color filter light leakage phenomena caused by the gap between quantum dot is improved, the utilization rate of light is greatly increased and light projects the brightness of quantum dot colour filter ilm substrate.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of preparation side of the quantum dot color filter based on self assembly
Method.
Background technology
With the development of display technology, liquid crystal display（Liquid Crystal Display, LCD）Shown etc. plane
Device has the advantages that high image quality, power saving, fuselage is thin and has a wide range of application, and is widely used in mobile phone, TV, notebook
The various consumption electronic products such as computer, desktop computer, become the mainstream in display device.
As the improvement of people's living standards, performance such as high brightness, high colour gamut, wide viewing angle etc. of liquid crystal display are carried
Harsher requirement is gone out, therefore, it is necessary to search out the new material met the requirements.Novel semiconductor material nano-quantum point because
It causes the attention of researchers with characteristics such as high brightness, high colour gamut, excitation purity height.Nano-quantum point is also known as partly led
Body is nanocrystalline, size generally between 1-10nm, have exciting light spectrum width, emission spectrum are symmetrical and width is narrow, color can
The spectral signatures such as tune, photochemical stability height.Red green quantum dot mixture is excited to produce white light using blue light-emitting diode,
Quantum dot is in the field such as electroluminescent device, photo luminescent devices, display, solid-state lighting, biomedicine extensive application.
Usual liquid crystal display panel is by color film（CF, Color Filter）Substrate, thin film transistor (TFT)（TFT, Thin
Film Transistor）Substrate, the liquid crystal being sandwiched between color membrane substrates and thin film transistor base plate（LC, Liquid
Crystal）And sealing glue frame（Sealant）Composition.Color membrane substrates mainly include underlay substrate, black matrix, rgb pixels point,
The color membrane substrates being made of the colored filter of three kinds of colors of red, green, blue are the important components of liquid crystal display, red green
Blue three-color is mainly made up of red, green, blue colour fluorescent powder or red, green, blue resins, but its brightness and color
Domain can not be equal to quantum dot.
Researcher proposes the display devices of a kind of chromatic color filter base and its formation in 101034175 B of CN, its
In rgb pixels point prepared by " subtraction principle ", i.e., by one layer of red photoresist of spin-coating method spin coating, unwanted
Part photoetching is fallen, and forms red color filter film, then is sequentially prepared green, blue color film, although RGB can be made in this method
Pixel, but its preparation process is complicated, and cost of manufacture is high, and raw material availability is low, and it does not account for light from pixel
The problem of intermolecular gap of dye inside is spilt.In 101515081 B of CN researcher refer to a kind of color membrane substrates and
Its manufacture method, wherein setting reflection matrix in black matrix as reflection as rgb pixels point using RGB resin
Layer, has disperseed portion of external incident light, but it does not account for the phenomenon that light is leaked out from the gap between dye molecule yet.
Quantum dot color filter is a kind of color filter film using quanta point material as luminescent substance, it uses blue light
LED deactivates rubescent, green quantum dot generation feux rouges and green light, red, green quantum dot and blue light as excitation source and is formed respectively red green
Blue pixel.Since quanta point material is nano-scale particle, it can not have when forming pixel as wanting we
Sequence be arranged together but random alignment, and quantum dot particle size distribution be not very uniformly, between adjacent quantum dot between
Away from phenomenon not of uniform size, causing light to be leaked out from the gap between quantum dot therefrom.
Therefore, it is necessary to provide a kind of preparation method of the quantum dot color filter based on self assembly.Quantum dot is by surface
The modification of activating agent makes its surface positively or negatively charged, is then arranged closely together by the method for LBL self-assembly,
So as to improve quantum dot color filter light leakage phenomena caused by the gap between quantum dot.
The content of the invention
In view of this, the object of the present invention is to provide a kind of preparation method of the quantum dot color filter based on self assembly, use
In reducing the blue light leak phenomenon caused by the gap between red, green quanta point material exists, so as to improve due to light leak
The phenomenon that caused colour gamut purity reduces.The quantum dot color filter can solve the problems, such as the blue light leak of quantum dot color filter, and not
The luminescent properties of quantum dot can be reduced, its processing technology is easily achieved.
The present invention is realized using following scheme：A kind of preparation method of the quantum dot color filter based on self assembly, the amount
Son point colour filter membrane preparation method is as follows：
Step S1：First electrode is formed on underlay substrate；
Step S2：Black matrix is formed on the first electrode；
Step S3：Quantum dot slurry charged with the red and green quantum dot of surfactant mixed preparing or solution, wherein surface
Activating agent is modified quantum dot surface, the quantum dot surface after modification is carried positive charge or negative electrical charge, amount
Son point and the molar concentration rate of surfactant are 1:0.1—1:1；
Step S4：Red quantum dot and green quantum dot are produced on respectively by silk-screen printing, transfer or inkjet printing methods
Red, green pixel point position；
Step S5：Red, green pixel point places second electrode after being formed on pixel, adds between the first electrode and the second electrode
Upper electric field, electric field strength are 1V/ μm -10V/ μm；Allow charged red, green quantum in red, green pixel point using the method for self assembly
Point is closely attached to first electrode surface under the action of electric field, and direction of an electric field is electrically determined according to the charged quantum dot obtained
It is fixed, further quantum dot is arranged closely together layer by layer.
Further, the quantum dot color filter includes blue light source, underlay substrate, first electrode, black matrix, red, green
Quantum dot pixel and second electrode；The quantum dot color filter underlay substrate is made of the material of high light line transmitance, its work(
It can be the effect for playing leaded light；Black matrix is formed by the photoresist photoetching containing carbon black, its function is to reduce light leak and mixed light；The
One electrode and second electrode are made of transparent conductive material, its function is to form electric field, are allowed by the method for LBL self-assembly
Red, green quantum dot in red, green pixel point is arranged closely together layer by layer, so as to improve quantum dot color filter due between quantum dot
Gap caused by light leakage phenomena.
Further, the underlay substrate is the flexibility or hard substrate that thickness is 0.01-50mm, and baseplate material can be
Organic material is such as：PE（Polyethylene）、PP（Polypropylene）、PEN（Polyethylene naphthalate）、PC（Makrolon）, polypropylene
Sour methyl esters（PMA）, polymethyl methacrylate（PMMA）（Plexiglas or organic glass）, acetylbutyrylcellulose（CAB）, silicon
Oxygen alkane（Such as especially polymethylphenylsiloxane）, polyvinyl chloride（PVC）, polyvinyl alcohol（PVA）, poly terephthalic acid second two
Ester（PET）、（PETG）（Modified polyethylene terephthalate）、PDMS（Dimethyl silicone polymer）And COC（Cyclenes copolymer）
In one or more or inorganic material such as：（Low melting point）Glass,（Melting）One in quartz and transmission ceramic material
Kind is several, but is not limited only to these materials.
Further, the first electrode crosses spin coating or czochralski method is formed, and the first electrode is by transparent light conductive material structure
Into the transparent light conductive material includes application type ITO, Ag nano particles, AZO, FTO, ZnO, Ag or electroconductive polymer material
Expect the material formed, but be not limited only to these materials.
Further, the black matrix material can be metal material or the photoresist containing black pigment, described black
The production method of matrix includes the following steps：
The first step：One layer of black matrix material layer is deposited by spin coating or lifting the methods of in first electrode；
Second step：Mask plate is put in black matrix material layer；
3rd step：Unwanted part is eaten away using laser ablation or hydrofluoric acid；
4th step：Mask plate is removed, obtains black matrix.
Further, the surfactant can be nonionic surfactant such as alkylphenol polyoxyethylene ether, high-carbon
Fatty alcohol polyoxyethylene ether, polyoxyethylene carboxylate, fatty acid methyl ester ethoxylate, the ethyleneoxide addition of polypropylene glycol
Thing, ethylene glycol, isopropanol, polyethylene glycol 200, sorbitan ester, sucrose ester, alkylolamides etc.；It can also be anion
Surfactant such as soap, sulfate, sulfuric acid, phosphate ester salt, amino-acid salt, phenates, enolate, ketone group sulfanilamide (SN)
Salt, coordination formula anion salt, trisodium citrate, detergent alkylate naphthenic acid sodium etc., can also be cationic surfactant such as ten
Six cetylpyridinium bromides, imidazoline, morpholine guanidine, triazine derivative, fatty amine salt, ethanolamine salt, the more ammonium salts of polyethylene, ten
Six alkyl trimethyl ammonium bromides, tetra-n-butyl ammonium bromide, benzyltrimethylammonium chloride etc., but it is not limited only to these.
Further, the red green pixel point includes red green quantum dot, the red green pixel point can by silk-screen printing,
Transfer or ink-jet printing process are formed between adjacent black matrix, and red quantum is formed between the n-th row and the (n+1)th row black matrix
Point pixel, forms green quantum dot pixel between the (n+1)th row and the n-th+2 row black matrix.
Further, the particle size of the quantum dot is 1nm to 10nm, and the quantum dot can be water-soluble quantum
Point can also be oil-soluble quantum dot, it can be selected from II-IV compounds of group CdS, CdSe, CdTe, ZnS, ZnSe,
ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS,
HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe,
HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS,
The one or more of HgZnSeTe, HgZnSTe, can also be selected from III-V compound GaN, GaP, GaAs, AlN, AlP,
AlAs, InN, InP, InGaP, InAs, GaNP, GaNAs, GaPAs, AlNP, AINAs, AlPAs, InNP,
InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GalnNP, GalnNAs, GalnPAs, InAlNP,
InAlNAs, InAlPAs, CuInS2, CuInSe2, CuGaS2, CuGaSe2, AgInS2, AgInSe2, AgGaS2And AgGaSe2In one
Kind is several, and can be selected from inorganic compound can also be selected from organic compound.
Further, the red green quantum dot pixel adds electric field between the first electrode and the second electrode after being formed,
Electric field strength is 1V/ μm -10V/ μm, red green quantum dot is closely arranged by LBL self-assembly in the part close to first electrode
It is listed in together, so as to improve the light leakage phenomena of quantum dot color filter.
Compared to the prior art, the invention has the advantages that：The structure function of the present invention is complete, in first electrode
Electric field is added between second electrode, the red green quantum dot close to first electrode is arranged closely in by layer-by-layer
Together, the luminous efficiency of quantum dot is not interfered with, can effectively act as improving the light leakage phenomena of quantum dot color filter.
Brief description of the drawings
Fig. 1 is a kind of quantum dot colour filter membrane structure diagram of the present invention.
Fig. 2 is that a kind of quantum dot color filter of the present invention cures the signal after a period of time plus electric field self assembly
Figure.
Fig. 3 is the schematic diagram that a kind of quantum dot color filter of the present invention has just added electric field.
Fig. 4 is the schematic diagram that first electrode of the present invention is formed.
Fig. 5 is the schematic diagram that black matrix material layer of the present invention is formed.
Fig. 6 is black matrix mask exposure process schematic of the present invention.
Fig. 7 is developing process schematic diagram of the present invention.
Fig. 8 is the schematic diagram that the present invention forms black matrix.
Fig. 9 is quantum dot of the present invention and surfactant mixing schematic diagram.
Embodiment
A kind of quantum dot color filter based on self assembly provided by the invention is illustrated with reference to the accompanying drawings and embodiments
Preparation method.The present invention provides preferred embodiment, is served only for the present invention and is described further, should not be considered limited to
Embodiment set forth herein, can not be interpreted as limiting the scope of the invention, and skilled person is according to upper for the field technology
Some nonessential modifications and adaptations that the content of the invention makes the present invention are stated, still fall within protection scope of the present invention.This patent
In, quantum dot colour filter membrane structure, should not be considered as strict regulations its parameters, physical dimension.Here, reference chart is of the invention
The schematic diagram of idealized embodiments, the embodiment shown in the present invention should not be considered limited to the specific of the region shown in figure
Shape, but including that can realize the other shapes of identical function.Accessory in the present embodiment, the expression in figure is schematic
, but this should not be considered as limiting the scope of the invention.
In the embodiment of the present invention, quantum dot colour filter membrane structure as shown in Figure 1, including substrate 1, first electrode 2, black
Matrix 3, red green quantum dot pixel 4, red quantum dot 41, green quantum dot 42, blue light source 5.In the structure shown in Fig. 1
In, red green quantum dot pixel 4 is made of red quantum dot 41, green quantum dot 42.Red, green quantum dot pixel includes center
One or more quantum dots of the wavelength between 380-780nm, it is in certain colour mixture ratio amount of being made into respectively by quantum dot
Son point solution, its ratio be red：Green=1:13, which can be beaten by silk-screen printing, transfer or ink-jet
The methods of print, is formed, and the thickness of quantum dot pixel is 10-30 μm, and the shape of quantum dot pixel can be hemisphere, cylinder
Body, ellipsoid or cube etc., it is to be understood that the shape of quantum dot pixel can also be other shapes, the present embodiment
In attached drawing simply illustrate, be not regarded as limitation ot it.Specific implementation step is as follows：
The first step：One layer of first electrode layer is coated with by the method for spin coating or lifting on underlay substrate；
Second step：Substrate with first electrode layer is cured；
3rd step：One layer of black matrix material layer is coated with by the method for spin coating or lifting on the first substrate, is covered with mask plate
Black matrix position, falls unwanted position laser ablation or hf etching；
4th step：Red green quantum dot and surfactant are pressed into molar concentration 1:0.1—1:1 proportion prepares charged quantum
Point slurry or solution, Fig. 9 are quantum dot and surfactant mixing schematic diagram, and 1 is quantum dot stratum nucleare in figure, and 2 be quantum dot shell
Layer, 3 be quantum dot surface ligand, and 4 be anion surfactant, and 5 be cationic surfactant；
5th step：Between the n-th row and the (n+1)th row black matrix one layer is deposited with the method for silk-screen printing, transfer or inkjet printing
Red quantum dot pixel；
6th step：With the method deposition one of silk-screen printing, transfer or inkjet printing between the (n+1)th row and the n-th+2 row black matrix
The green quantum dot pixel of layer；
7th step：Electric field is added between the first electrode and the second electrode, and electric field level scope is 1V/ μm -10V/ μm, is made red
The red green quantum dot close-packed arrays of green pixel point.Such as red, green quantum dot bear electricity, then first electrode is connected with positive pole；Such as
Red, green quantum dot lotus positive electricity, then first electrode be connected with power cathode；To ensure that red, green quantum dot is closely deposited on the first electricity
On the surface of pole.Fig. 3 is the distribution of red green quantum dot in quantum dot color filter when just adding electric field between the first and second electrodes
Schematic diagram, wherein comprising substrate 1, first electrode 2, black matrix 3, red, turquoise pixel 4, it includes red quantum dot 41 and green
Color quantum dot 42, blue light source 5, second electrode 6, voltmeter 7, it provides 1V/ μm -10V/ μ for first electrode and second electrode
The electric field of m.Fig. 2 is to cure the schematic diagram after a period of time plus electric field self assembly between the first electrode and the second electrode.
In the present embodiment, the schematic diagram of first electrode formation is given, as shown in Figure 4；Black matrix material layer is formed
Schematic diagram, as shown in Figure 5；Black matrix mask exposure process schematic, as shown in Figure 6；Developing process schematic diagram, such as Fig. 7 institutes
Show；The schematic diagram of black matrix is formed, as shown in Figure 8；Quantum dot and surfactant mixing schematic diagram, as shown in Figure 9.
The above description is merely a specific embodiment, but above-described embodiment and be not used to limitation the present invention, it is any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (9)
- A kind of 1. preparation method of the quantum dot color filter based on self assembly, it is characterised in that：The quantum dot colour filter film preparation Method is as follows：Step S1：First electrode is formed on underlay substrate；Step S2：Black matrix is formed on the first electrode；Step S3：Quantum dot slurry charged with the red and green quantum dot of surfactant mixed preparing or solution, wherein surface Activating agent is modified quantum dot surface, the quantum dot surface after modification is carried positive charge or negative electrical charge, amount Son point and the molar concentration rate of surfactant are 1:0.1—1:1；Step S4：Red quantum dot and green quantum dot are produced on respectively by silk-screen printing, transfer or inkjet printing methods Red, green pixel point position；Step S5：Red, green pixel point places second electrode after being formed on pixel, adds between the first electrode and the second electrode Upper electric field, electric field strength are 1V/ μm -10V/ μm；Allow charged red, green quantum in red, green pixel point using the method for self assembly Point is closely attached to first electrode surface under the action of electric field, and direction of an electric field is electrically determined according to the charged quantum dot obtained It is fixed, further quantum dot is arranged closely together layer by layer.
- A kind of 2. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute Stating quantum dot color filter includes blue light source, underlay substrate, first electrode, black matrix, red, green quantum dot pixel and second Electrode；The quantum dot color filter underlay substrate is made of the material of high light line transmitance, to play the effect of leaded light；It is described black Matrix is formed by the photoresist photoetching containing carbon black, to reduce light leak and mixed light；The first electrode and the second electrode It is to be made of transparent conductive material, to form electric field, is allowed by the method for LBL self-assembly red, green in red, green pixel point Quantum dot is arranged closely together layer by layer, is showed so as to improve quantum dot color filter light leak caused by the gap between quantum dot As.
- A kind of 3. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute It is the flexibility or hard substrate that thickness is 0.01-50mm to state underlay substrate, and baseplate material is organic material or inorganic material；Work as institute When to state baseplate material be organic material, the organic material is PE（Polyethylene）、PP（Polypropylene）、PEN（Poly- naphthalenedicarboxylic acid second two Alcohol ester）、PC（Makrolon）, polymethyl acrylate（PMA）, polymethyl methacrylate（PMMA）（Plexiglas or organic glass Glass）, acetylbutyrylcellulose（CAB）, siloxanes（Such as especially polymethylphenylsiloxane）, polyvinyl chloride（PVC）, poly- second Enol（PVA）, polyethylene terephthalate（PET）、（PETG）（Modified polyethylene terephthalate）、PDMS（Poly- diformazan Radical siloxane）And COC（Cyclenes copolymer）In one or more；It is described inorganic when the baseplate material is inorganic material Material is（Low melting point）Glass,（Melting）One or more in quartz and transmission ceramic material.
- A kind of 4. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute State that first electrode crosses spin coating or czochralski method is formed, the first electrode is made of transparent light conductive material, the transparent light conductive material The material formed including application type ITO, Ag nano particles, AZO, FTO, ZnO, Ag or conductive polymer material.
- A kind of 5. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute It is metal material or the photoresist containing black pigment to state black matrix material, and the production method of the black matrix includes following step Suddenly：The first step：One layer of black matrix material layer is deposited by spin coating or lifting the methods of in first electrode；Second step：Mask plate is put in black matrix material layer；3rd step：Unwanted part is eaten away using laser ablation or hydrofluoric acid；4th step：Mask plate is removed, obtains black matrix.
- A kind of 6. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute Stating surfactant includes nonionic surfactant such as alkylphenol polyoxyethylene ether, high-carbon fatty alcohol polyoxyethylene ether, fat Sour polyoxyethylene ester, fatty acid methyl ester ethoxylate, the ethylene oxide adduct of polypropylene glycol, ethylene glycol, isopropanol, poly- second Glycol 200, sorbitan ester, sucrose ester, alkylolamides；Anion surfactant such as soap, sulfate, sulfuric acid Ester salt, phosphate ester salt, amino-acid salt, phenates, enolate, ketone group sulfanilamide salt, coordination formula anion salt, trisodium citrate, 12 Alkylbenzene naphthenic acid sodium；Cationic surfactant for example cetyl pyridinium bromide, imidazoline, morpholine guanidine, triazine derivative, The more ammonium salts of fatty amine salt, ethanolamine salt, polyethylene, cetyl trimethylammonium bromide, tetra-n-butyl ammonium bromide, benzyl trimethyl Ammonium chloride.
- A kind of 7. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute State red green pixel point and include red green quantum dot, the red green pixel point is formed in by silk-screen printing, transfer or ink-jet printing process Between adjacent black matrix, red quantum dot pixel is formed between the n-th row and the (n+1)th row black matrix, in the (n+1)th row and the Green quantum dot pixel is formed between n+2 row black matrix.
- A kind of 8. preparation method of quantum dot color filter based on self assembly according to claim 7, it is characterised in that：Institute The particle size for stating quantum dot is 1nm to 10nm, and the quantum dot is water-soluble quantum dot or oil-soluble quantum dot, selected from II- IV compounds of group CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, The one or more of CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or selected from III- V compounds of group GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InGaP, InAs, GaNP, GaNAs, GaPAs, A1NP, AINAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GalnNP, GalnNAs, GalnPAs, InAlNP, InAlNAs, InAlPAs, CuInS2, CuInSe2, CuGaS2, CuGaSe2, AgInS2, AgInSe2, AgGaS2And AgGaSe2Middle one or more, or selected from inorganic compound, or selected from organic Compound.
- A kind of 9. preparation method of quantum dot color filter based on self assembly according to claim 1, it is characterised in that：Institute State and add electric field after red green quantum dot pixel is formed between the first electrode and the second electrode, electric field level scope is electric-field strength Spending for 1V/ μm -10V/ μm, makes red green quantum dot be arranged closely in one by LBL self-assembly in the part close to first electrode Rise, so as to improve the light leakage phenomena of quantum dot color filter.
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|---|---|---|---|
| CN201711258691.5A CN108008565B (en) | 2017-12-04 | 2017-12-04 | Preparation method of quantum dot color filter film based on self-assembly |
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| CN201711258691.5A CN108008565B (en) | 2017-12-04 | 2017-12-04 | Preparation method of quantum dot color filter film based on self-assembly |
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| CN108008565A true CN108008565A (en) | 2018-05-08 |
| CN108008565B CN108008565B (en) | 2020-08-07 |
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| CN108681140A (en) * | 2018-05-18 | 2018-10-19 | 京东方科技集团股份有限公司 | Color membrane substrates and its manufacturing method |
| CN108873470A (en) * | 2018-06-25 | 2018-11-23 | 福州大学 | A kind of quantum stippling film backing structure |
| CN108919558A (en) * | 2018-06-25 | 2018-11-30 | 福州大学 | A kind of quantum dot color membrane structure of wedge-shaped substrate |
| CN109239829A (en) * | 2018-12-03 | 2019-01-18 | 嘉兴纳鼎光电科技有限公司 | A kind of production method of quantum dot color filter |
| CN111740032A (en) * | 2019-03-25 | 2020-10-02 | 三星显示有限公司 | Method for manufacturing quantum dot layer and display device including quantum dot layer |
| CN113539069A (en) * | 2020-04-13 | 2021-10-22 | Tcl华星光电技术有限公司 | Method for manufacturing particle film and display panel |
| CN114167640A (en) * | 2021-11-24 | 2022-03-11 | 武汉华星光电技术有限公司 | Manufacturing method of color film substrate |
| WO2022116319A1 (en) * | 2020-12-04 | 2022-06-09 | Tcl华星光电技术有限公司 | Quantum dot light conversion sheet and manufacturing method therefor, and quantum dot display apparatus |
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| CN108681140A (en) * | 2018-05-18 | 2018-10-19 | 京东方科技集团股份有限公司 | Color membrane substrates and its manufacturing method |
| CN108873470A (en) * | 2018-06-25 | 2018-11-23 | 福州大学 | A kind of quantum stippling film backing structure |
| CN108919558A (en) * | 2018-06-25 | 2018-11-30 | 福州大学 | A kind of quantum dot color membrane structure of wedge-shaped substrate |
| CN109239829A (en) * | 2018-12-03 | 2019-01-18 | 嘉兴纳鼎光电科技有限公司 | A kind of production method of quantum dot color filter |
| CN111740032A (en) * | 2019-03-25 | 2020-10-02 | 三星显示有限公司 | Method for manufacturing quantum dot layer and display device including quantum dot layer |
| CN113539069A (en) * | 2020-04-13 | 2021-10-22 | Tcl华星光电技术有限公司 | Method for manufacturing particle film and display panel |
| CN113539069B (en) * | 2020-04-13 | 2023-10-17 | Tcl华星光电技术有限公司 | Method for manufacturing particle film and display panel |
| WO2022116319A1 (en) * | 2020-12-04 | 2022-06-09 | Tcl华星光电技术有限公司 | Quantum dot light conversion sheet and manufacturing method therefor, and quantum dot display apparatus |
| CN114167640A (en) * | 2021-11-24 | 2022-03-11 | 武汉华星光电技术有限公司 | Manufacturing method of color film substrate |
| CN114167640B (en) * | 2021-11-24 | 2023-05-30 | 武汉华星光电技术有限公司 | Manufacturing method of color film substrate |
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