CN108020881A - It is a kind of to contain light guide plate encapsulating structure of quantum dot micro structure array and preparation method thereof for surface - Google Patents
It is a kind of to contain light guide plate encapsulating structure of quantum dot micro structure array and preparation method thereof for surface Download PDFInfo
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- CN108020881A CN108020881A CN201711257071.XA CN201711257071A CN108020881A CN 108020881 A CN108020881 A CN 108020881A CN 201711257071 A CN201711257071 A CN 201711257071A CN 108020881 A CN108020881 A CN 108020881A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0065—Manufacturing aspects; Material aspects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
- G02B6/004—Scattering dots or dot-like elements, e.g. microbeads, scattering particles, nanoparticles
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Abstract
Present invention offer is a kind of to contain light guide plate encapsulating structure of quantum dot micro structure array and preparation method thereof for surface, which is laminated structure, includes barrier layer, quantum dot micro structure array light modulation layer and encapsulated layer.The encapsulating structure can be prepared using full InkJet printing processes, be specifically：On the basis of pretreatment is carried out to substrate and forms barrier layer, uniformly mixed quantum dot slurry is molded over the lower surface of light guide plate by inkjet printing and is formed by curing light modulation layer；Again by point-to-point inkjet printing layer of transparent barrier material and encapsulated layer is formed by curing on the light guide plate with quantum dot site.The present invention solves the problems, such as discrete type distribution quantum dot micro structure array encapsulation, compared with other packing forms, with it is fully functional, structure is simplified, technique is simple and the advantage of cost reduction, can further genralrlization be applied to other lighting areas.
Description
Technical field
The present invention relates to a kind of light guide plate encapsulating structure and its making side for containing quantum dot micro structure array for surface
Method, belongs to quantum dot device technical field.
Technical background
In recent years, quantum spot semiconductor material and products thereof has started the upsurge of scientific research and application and development.Quantum dot
Also known as semiconductor nano, size have exciting light spectrum width, emission spectrum symmetrical and width generally between 1-10nm
The spectral signatures such as narrow, Color tunable, photochemical stability height.Excite red green quantum dot mixture can using blue light-emitting diode
White light is produced, quantum dot has in fields such as electroluminescent device, photo luminescent devices, display, solid-state lighting, biomedicines
Extensive use.Since quantum dot has strong size-dependent, so, with the reduction of quantum dot size, the absorption of particle
Corresponding blue shift can occur with fluorescence spectrum.Quantum dot has higher specific surface area, has to its grain structure and optical property
Obvious to influence, therefore, the chemical stability of many quantum dot phosphors is low, especially-, III-V semiconductor-quantum-points
Deng the problem of being used under the conditions of existing for water and oxygen, luminous efficiency can be caused low.Therefore, quantum dot is applied to above-mentioned
Field, first has to quantum dot device, and quantum dot backlight module is exactly a kind of effective form in liquid crystal display.
At present there is the example of quantum dot device in LCD backlight：First, quantum dot is included in LED chip；2nd,
Quantum dot is coated in light-guide edge；3rd, quantum dot is made into " quantum dot enhancing film " and is placed on light guide plate upper surface.First two side
Quantum dot in method will at high temperature work and under strong light excitation, this significantly reduce quantum point quantum efficiency and
Service life, therefore, it is necessary to first solve the problems, such as encapsulation and reliability of material.Although the third is encapsulated quantum dot with film,
It uses low permeable macromolecule membrane to be packaged quantum dot, and this use macromolecule membrane is packaged quantum dot
Technology still suffer from the problem of marginal water and/or oxygen penetrate into.The researchers in 104075190 A of CN105676341 and CN
Propose a kind of backlight module based on blue light activated embedded quantum dot micro-structure light guide plate and one kind is guide-lighting based on quantum dot
The backlight module of plate, embeds or is printed on the lower surface of light guide plate by quantum dot site, but it does not consider that quantum dot can be because
The problem of influencing quantum dot luminous efficiency for the entrance of water and/or oxygen in air, that is, the encapsulation of quantum dot is not accounted for
Problem, influences device that will decline with the quantum dot light emitting performance of the structure under light stimulus in air for a long time
Service life.Researcher proposes a kind of quantum dot backlight module and display device in CN104566015, wherein by quantum dot site
The upper surface of light guide plate is arranged on, quantum dot is encapsulated in inside site, it is contemplated that encapsulation problem, but it does not seal quantum dot
Dress technological process and encapsulating material illustrate.In order to solve the problems, such as this, it is necessary to propose that a kind of structure function is complete, work
Skill is easily achieved, liquid crystal display quantum dot backlight encapsulating structure of low cost, and can be with expanded application in surface micro-structure
The encapsulation and its technological process of array.
The content of the invention
In view of this, the object of the present invention is to provide a kind of light guide plate envelope for containing quantum dot micro structure array for surface
Assembling structure and preparation method thereof, the encapsulation that encapsulating structure of the invention solves the quantum dot micro structure array of discrete type distribution are asked
Topic, compared with other packing forms, have it is fully functional, structure is simplified, technique is simple and the advantage of cost reduction, the encapsulation knot
Structure can improve the water proof oxygen barrier ability of quantum dot, will not reduce the luminescent properties of quantum dot, its processing technology is easily achieved.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of light guide plate encapsulating structure for containing quantum dot micro structure array for surface：In light guide plate light-emitting surface opposite side table
Have barrier layer, quantum dot micro structure array light modulation layer and encapsulated layer successively from the inside to the outside in face.Wherein, light guide plate substrate is by height
The material of light penetration is formed, its function is to play the effect of leaded light；Barrier layer and encapsulated layer are mainly by transparent obstructive material
Form, its major function is that water in air-isolation and/or oxygen enter quantum dot layer and influence amount by light guide plate substrate layer
The luminous efficiency of son point and service life；Quantum dot micro structure array light modulation layer is mainly by discrete light modulation site according to certain pattern battle array
Column distribution forms, and after the light that side entering type light source is sent, which enters light guide plate inner total reflection propagation, runs into light modulation site, can enter
Light modulation site simultaneously produces scattering and color conversion, and forms uniform area light source light extraction；Encapsulated layer and the close sealing-in of barrier layer, the amount of making
Son point micro structure array light modulation layer is packaged in wherein, and major function is that water in air-isolation and/or oxygen enter quantum dot
Layer and influence luminous efficiency and the service life of quantum dot.
The flow of the full InkJet printing processes for being used to make the light guide plate that quantum dot micro structure array is contained on surface is such as
Under：
The first step：Light guide plate substrate is pre-processed, cleaning base plate surface, in light guide plate base lower surface to the micro- knot of quantum dot
Structure array pattern position carries out the preliminary making to bit sign, i.e., passes through spray in the starting point and terminal of micro structure array pattern position
The graphic sign such as spider or asterisk on black franking, then the process by inkjet printing increasing material manufacturing, according to contraposition
Sign flag, by hydrophobicity is good, water proof oxygen barrier property is good transparent obstructive material graphically to corresponding quantum dot micro-structure battle array
Row pattern position, forms barrier layer；
Second step：Quantum dot solution and composite material are uniformly mixed into quantum dot slurry, further in accordance with contraposition sign flag, led to
The process of inkjet printing increasing material manufacturing is crossed, quantum dot slurry is molded over light guide plate barrier layer in the way of scanning and printing
Lower surface, formed quantum dot micro structure array pattern light modulation layer；
3rd step：According to contraposition sign flag, again by point pair on the light guide plate with quantum dot micro structure array pattern
Transparent obstructive material is formed one layer of encapsulated layer by the process of spot scan inkjet printing, is touched with barrier layer, to each quantum
Point micro-structure forms individual packages, forms encapsulated layer.
Further, during the full InkJet printing processes are using the arrangement of light modulation layer quantum dot micro structure array as whole process
The inkjet printing figure of unique foundation, the figure should include microstructure graph array and alignment mark symbol.To ensure to encapsulate
Effect, each microstructure size after the barrier layer and encapsulated layer are graphical are slightly larger than each microstructure size of light modulation layer, its
Implementation method can pass through the model in same microstructure positional and using its center as the center of circle, bigger 5-10um than light modulation microstructure size
Enclose the interior 2-5 stacking of inkjet printing that repeat to complete, but be not limited only to this method.
Further, the full ink jet printing device includes at least the nozzle of 3 arranged in parallel, be respectively provided with barrier layer,
The corresponding inkjet printing slurry of light modulation layer, encapsulated layer.The reset of barrier layer nozzle and the alignment of mark are carried out first, then perform resistance
Space printing and curing, after the completion of barrier layer nozzle reset；Secondly, light modulation layer printing nozzle is switched to, then performs nozzle reset
With the alignment of mark, printing solidify afterwards, and the reset of printing nozzle are carried out in repeatable position；Finally, encapsulated layer spray is switched to
Mouth, performs the flows such as nozzle resets, mark is aligned, is printed, is cured, until all nozzles are answered after the completion of encapsulated layer printing process
Position.To reach necessary microstructure size, it is necessary to be printed repeatedly in some position repeatedly, or centered on some position,
In range scans printing certain all around for several times, to meet the requirements.When light modulation layer slurry has different quantum dot characteristics categories
Property, nozzle should be increased, and increase the printing step in corresponding flow, for example, printing red, green quantum dot slurry respectively, just should
Red, green nozzle is set respectively.
Further, the specific requirement of the full ink jet printing device includes：Inkjet printing pulse frequency for 1000Hz ~
2000Hz, the nozzle inside diameter are 30 μm ~ 80 μm, and the height of nozzle distance substrate is 0.5mm ~ 2.5mm, and the printing slurry glues
Spend for 0.5cp ~ 20cp, for surface tension in 26mN/m ~ 40mN/m, pH value range, need to be in purple according to photocuring form 4.5 ~ 9
Cure 60s ~ 120s under outer light, according to heat cure, solidification temperature is controlled in 40 DEG C -100 DEG C.
Further, the light guide plate substrate thickness is the flexibility or hard substrate of 0.01mm to 50mm, and baseplate material can
Be organic material such as：PE（Polyethylene）、PP（Polypropylene）、PEN（Polyethylene naphthalate）、PC（Makrolon）, it is poly-
Methyl acrylate（PMA）, polymethyl methacrylate（PMMA）（Plexiglas or organic glass）, acetylbutyrylcellulose
（CAB）, siloxanes（Such as especially polymethylphenylsiloxane）, polyvinyl chloride（PVC）, polyvinyl alcohol（PVA）, it is poly- to benzene two
Formic acid second diester（PET）、（PETG）（Modified polyethylene terephthalate）、PDMS（Dimethyl silicone polymer）And COC（Cyclenes
Copolymer）In one or more or inorganic material such as：（Low melting point）Glass,（Melting）Quartz and the ceramic material of transmission
One or more in material, but it is not limited only to these materials.
Further, the barrier layer transparent obstructive material is more than or equal to light penetration of the wavelength in 380-780nm
90%, the water oxygen transmitance of transparent obstructive material is less than or equal to 10-2, it is auspicious that the transparent obstructive material can be that organic material c-type is sent
Woods or inorganic material such as silica, silicon oxynitride, aluminium oxide and other mixed oxides etc., can also be polymerization
For example poly- base methyl acrylate of thing material, polyacrylate, polyurethane, organic siliconresin, polystyrene, styrene-acrylonitrile copolymerization
Thing, poly- methyl are different to defend diene, transparent polyamide etc., but is not limited only to this.The encapsulation layer material is consistent with barrier material.
Further, different zones of the discrete light modulation micro-structure of the light modulation layer in light guide plate lower surface have different
Distribution density or different zones site diameter itself are of different sizes, and light modulation network point distribution is adjusted using optical simulation software
Control, according to light guide plate and the relative position relation of backlight incident light source, in the region nearer apart from incident light source, dims micro- knot
Structure distribution is more sparse, on the contrary, it is then denser, ensure uniform by the planar light of light guide plate light-emitting surface.The quantum of the light modulation layer
Point micro-structure can be that indent can also be evagination, light modulation microstructure aspects can be hemispherical, cylinder, spheroid or
Cube etc., but it is not limited only to these shapes.The height for dimming micro-structure is 0.01 ~ 0.5mm, the distance of adjacent light modulation micro-structure
For 0.01 ~ 0.5mm.One or more quantum dots and composite material are mixed with the light modulation micro-structure, by the excitation of light source
Color conversion is produced, so as to fulfill the white balance needed for LCD backlight.
Further, the slurry for quantum dot micro structure array light modulation layer by centre wavelength 380-780nm it
Between one or more quantum dots and composite material mix when passing through ultrasonic vibration or mechanical agitation 2-5 small, the amount
The particle size of son point is 1nm to 10nm.The quantum dot can be selected from II-IV compounds of group CdS, CdSe, ZnS,
ZnSe, HgS, HgSe, CdSeS, CdSeTe, CdSTe, ZnSeTe, ZnSTe, HgSeS, HgSTe, CdZnS,
CdZnTe, CdHgS, CdHgTe, HgZnSe, CdZnSeS, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe,
The one or more of HgZnSeS, HgZnSeTe, HgZnSTe, or III-V compound GaN, GaP can also be selected from,
GaAs, AlAs, InN, InP, InGaP, GaNAs, GaPAs, A1NP, AINAs, AlPAs, InNP, InNAs,
InPAs, GaAlNP, GaAlNAs, GaAlPAs, GalnNP, GalnNAs, GalnPAs, InAlNP, InAlNAs,
InAlPAs, CuGaSe2, AgInS2, AgInSe2, AgGaS2And AgGaSe2Middle one or more, can be selected from inorganic compound
Organic compound can also be selected from.The composite material includes silica, composite resin particles, cyclohexanone and selected from two
Salt base ester, polymethyl methacrylate, Improvement type methacrylate synthetic resin, organosiloxane resins, acrylate change
One or more of esters in property organic siliconresin, acrylic resin, acrylic acid modified polyurethane and epoxy resin.
Further, the process of the barrier layer, light modulation layer and encapsulated layer includes but not limited to full inkjet printing type
Process for making, further includes following methods：According to contraposition sign flag, pass through point-to-point silk-screen printing in light guide plate base
Then the processes such as chromatography, photoetching chromatography, can also have by lifting or spin coating layer of transparent barrier material with mask plate handle
The part of quantum dot micro structure array covers, and is eaten away the part photoetching of no micro-structure or with hydrofluoric acid, but be not limited only to
Use these methods.
Further, the point-to-point silk-screen printing, inkjet printing chromatography alignment precision can use magnifying glass, microscope
Or CCD is accurately aligned according to contraposition sign flag, but it is not limited only to these methods.
The beneficial effects of the invention are as follows：
Contain light guide plate encapsulating structure and its technological process of quantum dot micro structure array for surface the present invention provides a kind of,
Compared with prior art, its protrusion substantive distinguishing features having is fundamentally to solve the quantum dot micro-structure of discrete type distribution
The preparation of array and integrative packaging problem, and it is simple in structure, technological process is complete, both ensured backlight module have it is good every
Water oxygen barrier ability, and the illumination effect and characteristic of quantum dot backlight are not influenced, while the service life of quantum dot backlight can be lifted.
Brief description of the drawings
Fig. 1 is applied to the schematic diagram in side entering type quantum dot backlight module for the present invention, and 5 be illuminating source in figure, and 6 be light
Diaphragm is learned, it can be the one or more in diffusion barrier, prism film, brightness enhancement film, and 7 be reflector plate, and 8 seal for laminated type of the present invention
Assembling structure；
Fig. 2 is a kind of light guide plate packaging technology for containing quantum dot micro structure array for surface described in the embodiment of the present invention 1
Flow chart；
Fig. 3 is light guide plate substrate, barrier layer, quantum dot site layer and encapsulated layer laminated type in the first initial configuration of the invention
The schematic diagram of structure（That is the dotted box portion in Fig. 1）；
Fig. 4 is to modify on the first initial configuration of the invention to quantum dot dot shape, forms the second initial configuration；
Fig. 5 is to modify on the 3rd initial configuration of the invention to the manufacture craft of encapsulated layer, i.e., is revolved with lifting or spin-coating method
One layer of encapsulated layer is applied, then quantum dot site part is covered with mask；
Fig. 6 is the quantum dot site laminated construction schematic diagram after Fig. 5 photoetching or erosion；
Fig. 7 is the point-to-point chromatography encapsulating structure schematic diagram of laminated type of the surface micro-structure array of embedded quantum dot light guide plate；
Fig. 8 is laminated type spin coating or the lifting encapsulating structure schematic diagram of the surface micro-structure array of embedded quantum dot light guide plate.
Embodiment
One kind provided by the invention is illustrated with reference to the accompanying drawings and embodiments contains quantum dot micro-structure for surface
The light guide plate encapsulating structure of array and its technological process.The present invention provides preferred embodiment, is served only for the present invention and does further
Illustrate, should not be considered limited to embodiment set forth herein, limiting the scope of the invention can not be interpreted as, should
Some nonessential modifications and adaptations that field technology skilled person makes the present invention according to foregoing invention content, still fall within this
The protection domain of invention.In this patent, the light guide plate encapsulating structure of quantum dot micro structure array, should not be considered as strict regulations
Its parameter, physical dimension.Here, reference chart is the schematic diagram of the idealized embodiments of the present invention, the embodiment shown in the present invention
The given shape in the region shown in figure is should not be considered limited to, but including that can realize other shapes of identical function
Shape.Each several part in the present embodiment, the expression in figure is schematical, but this should not be considered as limiting the model of the present invention
Enclose.
Embodiment 1
Fig. 3 shows this light guide plate encapsulating structure for containing quantum dot micro structure array for surface, and which includes leaded light
Plate substrate layer 1, barrier layer 2, quantum dot micro structure array light modulation layer 3, encapsulated layer 4.The first shown initial configuration in figure 3
In, quantum dot micro structure array light modulation layer 3 is made of quantum dot 31 and composite material 32.During quantum dot micro structure array includes
Cardiac wave grows one or more quantum dot and plyability scattering materials between 380-780nm, it is by quantum dot and plyability
Scattering material mixes according to a certain percentage is made into quantum dot slurry, its ratio can as needed depending on, the quantum dot micro-structure
Array is formed by inkjet printing methods, and the thickness of quantum dot micro structure array is 20-50 μm, the shape of quantum dot micro structure array
Shape can be hemisphere, cylinder, ellipsoid or cube etc.（Such as Fig. 4）, it is to be understood that quantum dot micro structure array
Shape can also be other shapes, and the attached drawing in the present embodiment is simply illustrated, and is not regarded as limitation ot it.The micro- knot of quantum dot
It is encapsulated layer outside structure array dimming layer, it is specifically with quantum dot micro structure array figure by organic material c-type Parylene
Formed on the light guide plate of case by point-to-point inkjet printing, its thickness is 10-20 μm.Specific implementation step is as follows：
The first step：Substrate is cleaned, in light guide plate base lower surface to quantum dot micro structure array pattern position after drying
The preliminary making to bit sign, then the process by increasing material manufacturings such as inkjet printings are carried out, according to contraposition sign flag, will be dredged
Water-based transparent obstructive material good, that water proof oxygen barrier property is good is graphically gone forward side by side to corresponding quantum dot micro structure array pattern position
Row cures, and forms barrier layer；
Second step：Quantum dot solution and composite material are uniformly mixed into quantum dot slurry, further in accordance with contraposition sign flag, led to
Cross a little to the process of the increasing material manufacturings such as inkjet printing, quantum dot slurry is molded over light guide plate in the way of scanning and printing
The lower surface of barrier layer, forms quantum dot micro structure array pattern, then the substrate for being printed on quantum dot micro structure array is consolidated
Change, form light modulation layer；
3rd step：According to contraposition sign flag, lead to again on the light guide plate with quantum dot micro structure array pattern after hardening
Cross the processes such as point-to-point scanning ink-jet printing and transparent obstructive material is formed into one layer of encapsulated layer, touch with barrier layer, to every
A quantum dot micro-structure forms independent encapsulated layer, then the light guide plate for forming encapsulated layer is cured again, forms encapsulated layer.
Embodiment 2
Fig. 5 shows this light guide plate encapsulating structure for containing quantum dot micro structure array for surface, and which includes leaded light
Plate substrate layer 1, barrier layer 2, quantum dot micro structure array light modulation layer 3, encapsulated layer 4.Quantum dot micro structure array light modulation layer 3 is by measuring
Son point 31 and composite material 32 are formed, and the preparation and formation of quantum dot micro structure array are similar with the embodiment of the present invention 1,
It is not repeated herein.It is encapsulated layer outside quantum dot micro structure array light modulation layer, it can be applied by spin coating or czochralski method and is covered with
Going, but be not limited only to these methods, encapsulation layer material is specifically to be made of inorganic material silica, silicon oxynitride, aluminium oxide,
Its thickness is 15-25 μm.5 be mask plate in Fig. 5, places it in below quantum dot micro structure array, encapsulated layer is exposed,
Or the exposed surface of encapsulated layer is coated on hydrofluoric acid, unwanted part photoetching is fallen or eaten away, Fig. 6 is photoetching or erosion
The light guide plate encapsulating structure schematic diagram of quantum dot micro structure array afterwards.Specific implementation step is as follows：
The first step：Substrate is cleaned, in light guide plate base lower surface to quantum dot micro structure array pattern position after drying
The preliminary making to bit sign, then the process by increasing material manufacturings such as inkjet printings are carried out, according to contraposition sign flag, will be dredged
Water-based transparent obstructive material good, that water proof oxygen barrier property is good is graphically gone forward side by side to corresponding quantum dot micro structure array pattern position
Row cures, and forms barrier layer；
Second step：Quantum dot solution and composite material are uniformly mixed into quantum dot slurry, further in accordance with contraposition sign flag, led to
The process of the increasing material manufacturings such as inkjet printing is crossed, quantum dot slurry is molded over light guide plate barrier in the way of scanning and printing
The lower surface of layer, forms quantum dot micro structure array pattern, then the substrate for being printed on quantum dot micro structure array is cured, shape
Into light modulation layer；
3rd step：According to contraposition sign flag, after hardening by carrying on the light guide plate with quantum dot micro structure array pattern
Transparent obstructive material is formed one layer of encapsulated layer by the process such as drawing or spin coating, is touched with barrier layer, to the micro- knot of each quantum dot
Independent encapsulated layer is configured to, then the light guide plate for forming encapsulated layer is cured again；
4th step：The part for having quantum dot micro structure array is covered with mask plate, unwanted part photoetching process or use
Hydrofluoric acid is eaten away, then removes mask plate, ultimately forms encapsulated layer.
Embodiment 3
Fig. 7 shows this light guide plate encapsulating structure for containing quantum dot micro structure array for surface, and which includes leaded light
Plate substrate layer 1, barrier layer 2, quantum dot micro structure array light modulation layer 3, encapsulated layer 4.Shown initial configuration is to quantum in figure 3
The forming position of point site is modified, and quantum dot micro structure array can be embedded in the groove of light guide plate lower surface indent,
Groove can be formed by laser ablation or pressure sintering, the side quantum dot slurry by silk-screen printing, transfer or inkjet printing
Formula is printed in a groove, passes through the side of point-to-point silk-screen printing, inkjet printing chromatography again after the curing of quantum dot micro structure array
Method prints one layer of encapsulated layer, or directly one layer of encapsulated layer of spin coating or lifting, Fig. 8 are spin coatings or carry after quantum dot site cures
Draw the schematic diagram after one layer of encapsulated layer.Specific implementation step is as follows：
The first step：In light guide plate base lower surface spill site matrix is formed by laser or other lithographic methods；
Second step：Substrate is cleaned, in light guide plate base lower surface to quantum dot micro structure array pattern position after drying
The preliminary making to bit sign, then the process by increasing material manufacturings such as silk-screen printing, transfer or inkjet printings are carried out, according to right
Bit sign marks, by hydrophobicity is good, water proof oxygen barrier property is good transparent obstructive material graphically to corresponding quantum dot micro-structure
Array pattern position is simultaneously cured；By lifting or one layer of barrier layer of spin coating and cured, form barrier layer；
3rd step：Quantum dot solution and composite material are uniformly mixed into quantum dot slurry, further in accordance with contraposition sign flag, led to
The process of the increasing material manufacturings such as point-to-point silk-screen printing, transfer or inkjet printing chromatography is crossed, quantum dot slurry is printed on and is led
The lower surface of tabula rasa barrier layer, forms quantum dot micro structure array pattern, then will be printed on the substrate of quantum dot micro structure array into
Row cures, and forms light modulation layer；
4th step：According to contraposition sign flag, after hardening by carrying on the light guide plate with quantum dot micro structure array pattern
Transparent obstructive material is formed one layer of encapsulated layer by the process such as drawing or spin coating, is touched with barrier layer, to the micro- knot of each quantum dot
It is configured to independent encapsulated layer；To the substrate with quantum dot site after curing by lifting or one layer of encapsulated layer of spin coating, then
The light guide plate for forming encapsulated layer is cured again；
5th step：The part for having quantum dot micro structure array is covered with mask plate, unwanted part photoetching process or use
Hydrofluoric acid is eaten away, then removes mask plate, ultimately forms encapsulated layer.
The above description is merely a specific embodiment, but above-described embodiment and be not used to limitation the present invention, it is any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
- A kind of 1. production method for the light guide plate encapsulating structure for containing quantum dot micro structure array for surface, it is characterised in that： The encapsulating structure is laminated type encapsulating structure, on light guide plate light-emitting surface opposite side surface from the inside to the outside successively with barrier Layer, quantum dot micro structure array light modulation layer and encapsulated layer；Wherein, barrier layer and encapsulated layer are formed by transparent obstructive material； Quantum dot micro structure array light modulation layer is made of discrete light modulation site according to certain pattern array distribution, when side entering type light source is sent out After the light gone out runs into light modulation site into light guide plate inner total reflection propagation, light modulation site can be entered and produce scattering and color turn Change, and form uniform area light source light extraction；Encapsulated layer and the close sealing-in of barrier layer, are packaged quantum dot micro structure array light modulation layer In wherein；The encapsulating structure is prepared using full InkJet printing processes, specifically includes following steps：The first step：Light guide plate substrate is pre-processed, cleaning base plate surface, in light guide plate base lower surface to the micro- knot of quantum dot Structure array pattern position carries out the preliminary making to bit sign, i.e., passes through spray in the starting point and terminal of micro structure array pattern position Graphic sign on black franking, then the process by inkjet printing increasing material manufacturing, will be hydrophobic according to contraposition sign flag Property good, transparent obstructive material that water proof oxygen barrier property is good graphically to corresponding quantum dot micro structure array pattern position, formed Barrier layer；Second step：Quantum dot solution and composite material are uniformly mixed into quantum dot slurry, further in accordance with contraposition sign flag, led to The process of inkjet printing increasing material manufacturing is crossed, quantum dot slurry is molded over light guide plate barrier layer in the way of scanning and printing Lower surface, formed quantum dot micro structure array pattern light modulation layer；3rd step：According to contraposition sign flag, again by point pair on the light guide plate with quantum dot micro structure array pattern Transparent obstructive material is formed one layer of encapsulated layer by the process of spot scan inkjet printing, is touched with barrier layer, to each quantum Point micro-structure forms individual packages, forms encapsulated layer.
- A kind of 2. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：The quantum dot micro structure array pattern is to arrange to make with light modulation layer quantum dot micro structure array For pattern；Each microstructure size after barrier layer and encapsulated layer are graphical is slightly larger than each microstructure size of light modulation layer, its Implementation method can pass through the model in same microstructure positional and using its center as the center of circle, bigger 5-10um than light modulation microstructure size Enclose the interior 2-5 stacking of inkjet printing that repeat to complete, but be not limited only to this method.
- A kind of 3. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：The full ink jet printing device includes at least the nozzle of 3 arranged in parallel, be respectively provided with barrier layer, The corresponding inkjet printing slurry of light modulation layer, encapsulated layer；The reset of barrier layer nozzle and the alignment of mark are carried out first, then perform resistance Space printing and curing, after the completion of barrier layer nozzle reset；Secondly, light modulation layer printing nozzle is switched to, then performs nozzle reset With the alignment of mark, printing solidify afterwards, and the reset of printing nozzle are carried out in repeatable position；Finally, encapsulated layer spray is switched to Mouth, performs nozzle and resets, mark alignment, printing, cure, until all nozzles reset after the completion of encapsulated layer prints process；For up to Into necessary microstructure size, it is necessary to be printed repeatedly repeatedly in some microstructure positional, or using some microstructure positional as Center, in range scans printing certain all around for several times, to meet the requirements；When light modulation layer slurry has different quantum dots spy Property attribute, should increase nozzle, and increase the printing step in corresponding flow.
- A kind of 4. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 3 Make method, it is characterised in that：In the full ink jet printing device, the nozzle inside diameter is 30 μm ~ 80 μm, nozzle distance substrate Highly it is 0.5mm ~ 2.5mm, inkjet printing pulse frequency is 1000Hz ~ 2000Hz；It is described printing slurry viscosity for 0.5cp ~ 20cp, surface tension are 26mN/m ~ 40mN/m, and pH value is 4.5 ~ 9；According to photocuring form need to cure under ultraviolet light 60s ~ 120s, according to heat cure, solidification temperature control is 40 DEG C -100 DEG C.
- A kind of 5. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：The light guide plate substrate is the flexibility or hard substrate that thickness is 0.01mm ~ 50mm, baseplate material Including but not limited to following material：Polyethylene, polypropylene, polyethylene naphthalate, makrolon, polymethyl acrylate, Polymethyl methacrylate, acetylbutyrylcellulose, siloxanes, polyvinyl chloride, polyvinyl alcohol, polyethylene terephthalate, In in modified polyethylene terephthalate, dimethyl silicone polymer, cyclenes copolymer, glass, quartz and transmission ceramic material One or more.
- A kind of 6. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：Light penetration >=90% of the transparent obstructive material to wavelength between 380-780nm, thoroughly Water oxygen transmitance≤10 of bright barrier material-2, the transparent obstructive material includes but not limited to c-type Parylene, silica, nitrogen Silica, aluminium oxide, poly- base methyl acrylate, polyacrylate, polyurethane, organic siliconresin, polystyrene, styrene-acrylonitrile copolymer The different one or more defended in diene, transparent polyamide of lonitrile copolymer, poly- methyl；The encapsulation layer material and barrier material one Cause.
- A kind of 7. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：Different zones of the discrete light modulation micro-structure of light modulation layer in light guide plate lower surface have different points Cloth density or different zones site diameter itself are of different sizes, and light modulation network point distribution is regulated and controled using optical simulation software, According to light guide plate and the relative position relation of backlight incident light source, in the region nearer apart from incident light source, micro-structure is dimmed Distribution is more sparse, on the contrary, it is then denser, ensure uniform by the planar light of light guide plate light-emitting surface；The micro- knot of quantum dot of light modulation layer Structure can be that indent can also be evagination, and light modulation microstructure aspects can be but not limited to hemispherical, cylinder, spheroid Or cube；The height for dimming micro-structure is 0.01 ~ 0.5mm, and the distance of adjacent light modulation micro-structure is 0.01 ~ 0.5mm；Dim micro- One or more quantum dots and composite material are mixed with structure, color conversion are produced by the excitation of light source, so as to fulfill liquid White balance needed for brilliant backlight.
- A kind of 8. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：The quantum dot slurry for quantum dot micro structure array light modulation layer is 380- by centre wavelength The one or more quantum dots and composite material of 780nm mix when passing through ultrasonic vibration or mechanical agitation 2-5 small, described The particle size of quantum dot is 1nm to 10nm；The quantum dot can be selected from II-IV compounds of group CdS, CdSe, ZnS, ZnSe, HgS, HgSe, CdSeS, CdSeTe, CdSTe, ZnSeTe, ZnSTe, HgSeS, HgSTe, CdZnS, CdZnTe, CdHgS, CdHgTe, HgZnSe, CdZnSeS, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, The one or more of HgZnSeS, HgZnSeTe, HgZnSTe, or III-V compound GaN, GaP can also be selected from, GaAs, AlAs, InN, InP, InGaP, GaNAs, GaPAs, A1NP, AINAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GalnNP, GalnNAs, GalnPAs, InAlNP, InAlNAs, InAlPAs, CuGaSe2, AgInS2, AgInSe2, AgGaS2And AgGaSe2Middle one or more, can be selected from inorganic compound Organic compound can also be selected from；The composite material includes silica, composite resin particles, cyclohexanone and selected from two Salt base ester, polymethyl methacrylate, Improvement type methacrylate synthetic resin, organosiloxane resins, acrylate change One or more in property organic siliconresin, acrylic resin, acrylic acid modified polyurethane and epoxy resin.
- A kind of 9. system of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 1 Make method, it is characterised in that：The process for making of the encapsulating structure includes but not limited to full InkJet printing processes, further includes Following methods：According to contraposition sign flag, pass through the technique of point-to-point silk-screen printing chromatography, photoetching chromatography in light guide plate base Method, can also be by lifting or spin coating layer of transparent barrier material, then with mask plate there is quantum dot micro structure array Part covers, and is eaten away the part photoetching of no micro-structure or with hydrofluoric acid；But it is not limited only to use these methods.
- 10. a kind of light guide plate encapsulating structure for containing quantum dot micro structure array for surface according to claim 9 Production method, it is characterised in that：The point-to-point silk-screen printing chromatography, inkjet printing chromatography alignment precision can use amplification Mirror, microscope or CCD are accurately aligned according to contraposition sign flag, but are not limited only to these methods.
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Application publication date: 20180511 |