CN107991351A - Integrated hydrogen gas sensor and preparation method thereof - Google Patents
Integrated hydrogen gas sensor and preparation method thereof Download PDFInfo
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- CN107991351A CN107991351A CN201711146853.6A CN201711146853A CN107991351A CN 107991351 A CN107991351 A CN 107991351A CN 201711146853 A CN201711146853 A CN 201711146853A CN 107991351 A CN107991351 A CN 107991351A
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- substrate
- hydrogen
- chip
- sensitive film
- temperature control
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
- G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature
Abstract
The invention discloses a kind of integrated hydrogen gas sensor, including hydrogen sensitive film chip, constant temperature control circuit and signal processing circuit, hydrogen sensitive film chip, constant temperature control circuit and the signal processing circuit to be integrated on same substrate.The invention also discloses a kind of production method of integrated hydrogen gas sensor, including step：S01, burn print line, separation layer, resistance and pad on substrate；S02, by the semiconductor chip in constant temperature control circuit, signal processing circuit and hydrogen sensitive film chip be pasted onto substrate reserved location；S03, by chip bonding pad and substrate bond pad correspondence position carry out welding lead；Capacitance in constant temperature control circuit, signal processing circuit, be welded on the position specified by S04；S05, debugging, adjust the parameter of each resistance and capacitance；S06, be tested for the property, and gas-guide tube is pasted at hydrogen sensitive film chip.Integrated hydrogen gas sensor and preparation method thereof of the present invention has that small, cost is low, high reliability.
Description
Technical field
The invention mainly relates to hydrogen detection technique field, refers in particular to a kind of integrated hydrogen gas sensor and preparation method thereof.
Background technology
According to the difference of operation principle, hydrogen gas sensor can be divided into catalytic combustion-type, thermal conductivity type, electrochemistry, resistor-type with
And the product type of several marketization applications such as power function type.But with the development of Hydrogen Energy source technology, traditional hydrogen
Sensor technology be difficult adapt at present and following hydrogen measurement needs, to including selectivity, environmental suitability, the service life,
The technical performances such as response time, stability, power consumption propose the requirement of higher.Compared to the hydrogen gas sensor of other principles, claimed
There is short precision height, response time, long lifespan, environmental suitability for the resistance type thin film hydrogen gas sensor of third generation sensor
By force, the advantages that hydrogen specificity is good, occupies the high-end market of current hydrogen gas sensor, be mainly used in weaponry, nuclear power station,
The association areas such as oil, chemical industry and electric power.
Palldium alloy thin-film electro resistance type hydrogen gas sensor is a kind of current technology resistance type thin film hydrogen sensing the most ripe
Device, its principle are the catalyticing decomposition action to hydrogen using palladium membranes so that hydrogen molecule is decomposed into hydrogen atom, and diffusion dissolution is extremely
In palladium membranes lattice, the change of palladium membranes resistivity is caused, it is dense that the change by detecting film resistor can reach detection hydrogen
The purpose of degree.But palldium alloy resistance is significantly increased with temperature increase, to make the reliable and stable work of hydrogen gas sensor, need pair
The quick resistance 11 of hydrogen carries out temperature control or compensation, eliminates influence of the variation of ambient temperature to hydrogen gas sensor precision.It is main at present
The way of stream is all to carry out temperature control to hydrogen sensitive chip, such as patent CN1947007 thin film gas sensor configuration SMIC
Piece includes Gas-sensing resistor, Temperature-sensing resistor, adding thermal resistance；Patent CN 105388937A one kind is used for gas sensor
Accurate constant-temperature control method and device include the modules such as sensing probe, control box, environment temperature detection components, be both needed to pass
Sensor uses thermostatic control technology.Structure only includes hydrogen sensor chip structure in wherein CN 1947007, and practical application is also
Need to be encapsulated into popping one's head in, and be equipped with the sensor circuit control box of complexity, such as the MODEL series of products of H2SCAN Corp.,
Its circuit box minimum dimension has reached 23.1mm*8.6mm*3.6mm, does not include probe size also；And CN 105388937A
Explicitly pointing out product also can be larger including part, sizes such as probe, control box.That is, use sensitive chip at present
The form that probe is then equipped with dedicated circuit box is packaged into, probe and circuit box use electric connector or cable connection, from
And cause that there are problems with：
1st, sensitive chip probe and dedicated circuit box are independently of each other, size can not reduce；
2nd, sensitive chip probe and circuit box are by electric connector and cable connection, and reliability is low, poor anti jamming capability；
3rd, integral product encapsulation, production, testing and measuring technology are complicated, of high cost；
4th, the environmental suitability such as anti-vibration, high temperature resistant is poor.
Increasingly ripe with hydrogen energy source automotive engineering, the proposition such as its size to hydrogen gas sensor, reliability, cost is more
Add the requirement of harshness, the prior art can not meet the requirement to hydrogen gas sensor in hydrogen energy source automobile.
The content of the invention
The technical problem to be solved in the present invention is that：For technical problem existing in the prior art, the present invention provides one
The integrated hydrogen gas sensor that kind is small, cost is low, reliability is high, and accordingly a kind of encapsulation of offer, scheduling and planning are simple
Integrated hydrogen gas sensor production method.
In order to solve the above technical problems, technical solution proposed by the present invention is：
A kind of integration hydrogen gas sensor, including hydrogen sensitive film chip, constant temperature control circuit and signal processing circuit, the hydrogen are quick
Thin film chip, constant temperature control circuit and signal processing circuit are integrated on same substrate.
Further as above-mentioned technical proposal is improved：
The substrate is Al2O3Ceramic substrate.
The hydrogen sensitive film chip layout is in the middle part of the substrate, the constant temperature control circuit and signal processing circuit point
Not Wei Yu the hydrogen sensitive film chip both sides.
The invention also discloses a kind of production method based on integrated hydrogen gas sensor as described above, including following step
Suddenly：
S01, burn print line, separation layer, resistance and pad on substrate；
S02, by the semiconductor chip in constant temperature control circuit, signal processing circuit and hydrogen sensitive film chip be pasted onto substrate and reserve
Position, and carry out drying glue processing；
Chip bonding pad and substrate bond pad correspondence position, is carried out welding lead, realization electrical connection by S03；
Capacitance in constant temperature control circuit, signal processing circuit, be welded on the position specified by S04；
S05, debugging, adjust the parameter of each resistance and capacitance；
S06, be tested for the property, and in performance test by rear, gas-guide tube is pasted at hydrogen sensitive film chip.
Further as above-mentioned technical proposal is improved：
In step S01, print layer protecting film is burnt in resistive surface.
In step S03, chip bonding pad and substrate bond pad correspondence position are carried out by welding using Si-Al wire binding technique and drawn
Line.
In step S04, capacitance is welded on the position specified by the way of manually or automatically patch.
In step S05, the resistance value of resistance is adjusted by laser beam.
In step S06, performance test includes precision, repeatability, stability and dielectric strength performance test.
In step S06, protective shell is pasted on each circuit components on substrate.
Compared with prior art, the advantage of the invention is that：
Integrated hydrogen gas sensor of the present invention and preparation method thereof, since three is integrated on same substrate, is not only produced
Product size is small, and reliability is high, strong antijamming capability, and encapsulation, scheduling and planning is simple, cost is low and good environmental adaptability.
Brief description of the drawings
Fig. 1 is the structure diagram of the present invention.
Fig. 2 is the structure diagram of hydrogen sensitive film chip in the present invention.
Fig. 3 is the production process figure of hydrogen sensitive film chip in the present invention.
Fig. 4 is the circuit diagram of constant temperature control circuit in the present invention.
Fig. 5 is the circuit diagram of signal processing circuit in the present invention.
Fig. 6 is flow chart of the method for the present invention.
Figure label represents：1st, hydrogen sensitive film chip；11st, the quick resistance of hydrogen；12nd, temperature detecting resistance；13rd, adding thermal resistance；14th, weld
Disk；15th, passivating film；2nd, constant temperature control circuit；3rd, signal processing circuit；4th, gas-guide tube；5th, substrate.
Embodiment
Below in conjunction with Figure of description and specific embodiment, the invention will be further described.
As shown in Figures 1 to 5, the integrated hydrogen gas sensor of the present embodiment（As palldium alloy thin-film electro resistance type hydrogen senses
Device）, including hydrogen sensitive film chip 1, constant temperature control circuit 2 and signal processing circuit 3, hydrogen sensitive film chip 1, constant temperature control circuit
2 and signal processing circuit 3 be integrated in by thick film integrated technology on same substrate 5.Since three is integrated in same substrate 5
On, not only product size is small, and reliability is high, strong antijamming capability, and encapsulation, scheduling and planning is simple, cost is low and environment
Adaptability is good.
In the present embodiment, substrate 5 is Al2O3Ceramic substrate.
In the present embodiment, hydrogen sensitive film chip 1 is arranged in the middle part of substrate 5, constant temperature control circuit 2 and signal processing circuit
3 are located at the both sides of hydrogen sensitive film chip 1 respectively；In other embodiments, it can also ensure that layout is simple, takes volume as far as possible
It is small.
As shown in Fig. 2, in the present embodiment, the quick resistance 11 of hydrogen, adding thermal resistance 13, thermometric are integrated with hydrogen sensitive film chip 1
Resistance 12 and pad 14, the quick resistance 11 of hydrogen make broken line type palladium-nickel alloy using micrometer-nanometer processing technology in single crystalline Si crystal column surface
Electric resistance structure, using the hydrogen sensing structure mode of favour stone full-bridge, altogether including the quick resistance 11 of the identical hydrogen of four performance parameters, but its
In two surfaces deposition have passivating film 15, insensitive to hydrogen, adding thermal resistance 13 uses platinum resistance structure, and temperature detecting resistance 12 uses
Nickel broken line type electric resistance structure.When touching hydrogen, the quick resistance 11 of two of which hydrogen becomes larger, two other is constant, passes through favour
Increased resistance value, can be converted into bridge voltage output valve by stone electric bridge connection.As shown in figure 3, the tool of hydrogen sensitive film chip 1
Body technology is using conventional technique, and details are not described herein.
As shown in figure 4, the constant temperature control circuit 2 in the present embodiment uses pid control mode, digital PID and analog pid are all
It can realize, design temperature makes the difference with the real-time temperature values fed back, this error signal is by ratio, integration, differential etc.
The both ends of adding thermal resistance 13 are added to after reason can control to real-time and precise 1 temperature of hydrogen sensitive film chip；Wherein amplifier U1B, R1, C1
And R2 forms constant-current source, this constant current source current is applied to 12 both ends of temperature detecting resistance, is turned the change of temperature by temperature detecting resistance 12
The change of voltage is turned to, and gives this Voltage Feedback to amplifier U1A negative-feedbacks end, U1D and R3, R4, R5 are voltage set-point, are passed through
Set different voltages to control hydrogen sensitive film chip 1 and form PI control rings in different temperature spots, R6, R7, U1A and C2
Road, error signal control the size of Q1 electric currents by being exported after proportional integration link to R8, and then control adding thermal resistance 13 to power on
The size of stream realizes temperature control.
In the present embodiment, film hydrogen sensor chip is favour stone structure, the differential voltage of mV grades of output, it is only necessary to logical
Cross instrument amplifier to nurse one's health it and amplify with regard to actual control system required voltage value can be exported, its signal processing circuit 3 such as Fig. 5
Shown, D1, R10, U1, C12 form power unit, output burning voltage VCC, U3B, U3C, U3D, R11, R12, R13, R14,
R15, R16, R17, R18, R19 form instrument amplifier, and the mV level signals that hydrogen sensitive film chip 1 exports are amplified output rear class
The specific voltage signal that control system needs, wherein amplification factor depend on the size and zero-point voltage of R11, R12, R13
Partial pressure sizes of the VCC on R19.
The integrated hydrogen gas sensor of the present invention is highly suitable for the detection of hydrogen energy source automobile hydrogen fuel, applies also at present
All hydrogen detection fields.
The present invention further correspondingly discloses a kind of production method based on integrated hydrogen gas sensor as described above, such as Fig. 6
It is shown, comprise the following steps：
S01, burn print line, separation layer, resistance and pad 14 on substrate 5；
S02, by the semiconductor chip in constant temperature control circuit 2, signal processing circuit 3 and hydrogen sensitive film chip 1 be pasted onto substrate 5
Reserved location, and carry out drying glue processing；
Chip bonding pad and 5 pad correspondence position of substrate, is carried out welding lead, realization electrical connection by S03；
Capacitance in constant temperature control circuit 2, signal processing circuit 3, be welded on the position specified by S04；
S05, debugging, adjust the parameter of each resistance and capacitance；
S06, be tested for the property, and in performance test by rear, gas-guide tube 4 is pasted at hydrogen sensitive film chip 1.
The production method of the present invention utilizes thick-film hybrid integration technology, by hydrogen sensitive film chip 1, constant temperature control circuit 2, letter
Number process circuit 3 is integrated on one piece of ceramic substrate 5, is realized product Two-level ensemble, is not only substantially reduced the size of product, and
And the packaging technology of system can be simplified, connecting wire, connector and solder joint are reduced, improves the reliability of hydrogen gas sensor,
The cost of product is reduced at the same time, easy to product mass production.
The production method of the integrated hydrogen gas sensor of the present invention is described further with reference to a specific embodiment：
Step 1：Layout design
Utilize Cadence or Altium design softwares, 5 size of combined base requirement, by constant temperature control circuit 2 and signal processing electricity
Road 3 is depicted as PCB domains, and it is quick thin that PCB domains include reserved resistance position, connecting wire, capacitance pad, each active device and hydrogen
The pad of membrane DNA chip 1, integral layout is as shown in Figure 1, wherein hydrogen sensitive film chip 1 is located at the middle part of substrate 5, constant temperature control circuit
2 and signal processing circuit 3 be located at the both sides of hydrogen sensitive film chip 1, and corresponding mask plate is made according to PCB domains；
Step 2：Prepare the materials such as substrate 5, silk screen, slurry
According to different product use environment or burning process requirement, different materials can be selected, the substrate 5 in the present embodiment selects
With conventional Al2O3 ceramic substrates, silk screen selects 316 stainless steel cloths, and conductor paste selects Ag-Pd slurries, resistance slurry choosing
With glaze resistance slurry, dielectric paste Ceramics slurry material；
Step 3：Burn print line, separation layer, resistance and pad
Using screen printing technique, the material in step 2 is respectively printed on substrate 5, and the wet film being completed for printing is carried out
Baking and sintering, you can complete the manufacture craft of line, separation layer, resistance and pad；
Step 4：Resistive surface processing
Thick-film resistor aoxidizes or is corroded, it is necessary to its surface is handled in order to prevent, is printed also with the burning in step 3
Technique, print layer protecting film is burnt on its surface；
Step 5：Hydrogen sensitive film chip 1 and semiconductor chip are pasted
Using dedicated chip glue, film hydrogen sensitive film chip 1, operational amplifier, triode, regulated power supply etc. are partly led
Body chip is pasted onto at the reserved position of substrate 5, and carries out 60 DEG C of drying glues processing of 24h；
Step 6：Chip lead
Chip bonding pad and 5 pad correspondence position of substrate are carried out by welding lead using Si-Al wire binding technique, realize electrical connection；
Step 7：Capacitance mounts
Capacitance is welded on the position specified by the way of either manually or automatically patch；
Step 8：Circuit debugging
8.1st, by constant temperature control circuit 2 by chip controls on the temperature spot of setting, the setting of temperature spot passes through given difference
Vref1 set, and the PI parameters of temperature control loops by the R7 in regulating thermostatic control circuit 2 and the size of C2 come real
It is existing；
8.2nd, sensor output is adjusted to standard signal output, for example 1~5V, amplification factor pass through Regulate signal process circuit
The size of R11 is realized in 3, and offset output is realized by adjusting the size of R19；
Step 9：Laser resistor trimming
According to the resistance value needed in step 8, using laser resistor trimming equipment, R11 and R19 is modified using laser beam accurately to obtain
Its resistance needed；
Step 10：Test
Property indices test, including precision, repeatability, stability, dielectric strength etc. are carried out to hydrogen gas sensor；
Step 11：Encapsulation
For the product of property indices qualification in step 10, plastics are protected in each circuit components surface cover on substrate 5
Shell, is pasted by epoxy glue, ensures good insulation and NBC protective performance, and air guide is finally bonded at film hydrogen sensitive film chip 1
Pipe 4, completes to make.
The above is only the preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment,
All technical solutions belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
For those of ordinary skill, some improvements and modifications without departing from the principles of the present invention, should be regarded as the protection of the present invention
Scope.
Claims (10)
1. a kind of integration hydrogen gas sensor, including hydrogen sensitive film chip（1）, constant temperature control circuit（2）And signal processing circuit
（3）, it is characterised in that the hydrogen sensitive film chip（1）, constant temperature control circuit（2）And signal processing circuit（3）It is integrated in same
Substrate（5）On.
2. integration hydrogen gas sensor according to claim 1, it is characterised in that the substrate（5）For Al2O3Ceramic base
Piece.
3. integration hydrogen gas sensor according to claim 1, it is characterised in that the hydrogen sensitive film chip（1）Arrangement
In the substrate（5）Middle part, the constant temperature control circuit（2）And signal processing circuit（3）It is located at the hydrogen sensitive film respectively
Chip（1）Both sides.
4. a kind of production method of the integrated hydrogen gas sensor based on as described in any one in claims 1 to 3, its feature
It is, comprises the following steps：
S01, in substrate（5）It is upper to burn print line, separation layer, resistance and pad；
S02, by constant temperature control circuit（2）, signal processing circuit（3）In semiconductor chip and hydrogen sensitive film chip（1）Paste
In substrate（5）Reserved location, and carry out drying glue processing；
S03, by chip bonding pad and substrate（5）Pad correspondence position carries out welding lead, realizes electrical connection；
S04, by constant temperature control circuit（2）, signal processing circuit（3）In capacitance be welded on the position specified；
S05, debugging, adjust the parameter of each resistance and capacitance；
S06, be tested for the property, in performance test by rear, in hydrogen sensitive film chip（1）Paste gas-guide tube in place（4）.
5. production method according to claim 4, it is characterised in that in step S01, burn one layer of guarantor of print in resistive surface
Cuticula.
6. production method according to claim 4, it is characterised in that, will using Si-Al wire binding technique in step S03
Chip bonding pad and substrate（5）Pad correspondence position carries out welding lead.
7. production method according to claim 4, it is characterised in that in step S04, using manually or automatically patch
Mode capacitance is welded on the position specified.
8. production method according to claim 4, it is characterised in that in step S05, resistance is adjusted by laser beam
Resistance value.
9. production method according to claim 4, it is characterised in that in step S06, performance test includes precision, again
Renaturation, stability and dielectric strength performance test.
10. production method according to claim 4, it is characterised in that in step S06, in substrate（5）Upper each circuit elements
Protective shell is pasted on device.
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| CN201711146853.6A CN107991351B (en) | 2017-11-17 | 2017-11-17 | Integrated hydrogen sensor and manufacturing method thereof |
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| CN107991351B CN107991351B (en) | 2020-09-18 |
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Cited By (1)
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| CN112611788A (en) * | 2020-12-28 | 2021-04-06 | 山东大学 | Semiconductor hydrogen sulfide gas sensor |
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