CN107991351B - Integrated hydrogen sensor and manufacturing method thereof - Google Patents
Integrated hydrogen sensor and manufacturing method thereof Download PDFInfo
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- CN107991351B CN107991351B CN201711146853.6A CN201711146853A CN107991351B CN 107991351 B CN107991351 B CN 107991351B CN 201711146853 A CN201711146853 A CN 201711146853A CN 107991351 B CN107991351 B CN 107991351B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
- G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature
Abstract
The invention discloses an integrated hydrogen sensor which comprises a hydrogen sensitive film chip, a constant temperature control circuit and a signal processing circuit, wherein the hydrogen sensitive film chip, the constant temperature control circuit and the signal processing circuit are integrated on the same substrate. The invention also discloses a manufacturing method of the integrated hydrogen sensor, which comprises the following steps: s01, burning and printing a connecting line, an isolating layer, a resistor and a bonding pad on the substrate; s02, adhering the semiconductor chip and the hydrogen sensitive film chip in the constant temperature control circuit and the signal processing circuit to the reserved position of the substrate; s03, welding leads at the corresponding positions of the chip bonding pad and the substrate bonding pad; s04, welding capacitors in the constant temperature control circuit and the signal processing circuit at specified positions; s05, debugging, and adjusting parameters of each resistor and each capacitor; and S06, performing performance test, and sticking an air duct at the hydrogen sensitive film chip. The integrated hydrogen sensor and the manufacturing method thereof have the advantages of small volume, low cost, high reliability and the like.
Description
Technical Field
The invention mainly relates to the technical field of hydrogen detection, in particular to an integrated hydrogen sensor and a manufacturing method thereof.
Background
According to different working principles, hydrogen sensors can be classified into catalytic combustion type, thermal conductivity type, electrochemical type, resistive type, functional function type and other types of products for marketable applications. However, with the development of hydrogen energy technology, the conventional hydrogen sensor technology is difficult to adapt to the current and future hydrogen measurement requirements, and higher requirements are made on technical performances including selectivity, environmental adaptability, service life, response time, stability, power consumption and the like. Compared with hydrogen sensors with other principles, the resistance type thin film hydrogen sensor called as a third-generation sensor has the advantages of high precision, short response time, long service life, strong environmental adaptability, good hydrogen specificity and the like, occupies the high-end market of the current hydrogen sensor, and is mainly applied to the related fields of weaponry, nuclear power plants, petroleum, chemical industry, electric power and the like.
The principle of the resistance type hydrogen sensor is that hydrogen is decomposed into hydrogen atoms by the catalytic decomposition of a palladium film, the hydrogen atoms are diffused and dissolved into a palladium film crystal lattice to cause the change of the resistivity of the palladium film, and the aim of detecting the hydrogen concentration can be achieved by detecting the change of the film resistance. However, the resistance of the palladium alloy resistor increases significantly with the temperature increase, so that the hydrogen sensor needs to be temperature-controlled or compensated for in order to operate reliably and stably, and the influence of the environmental temperature change on the accuracy of the hydrogen sensor is eliminated. At present, the mainstream method is to control the temperature of a hydrogen sensitive chip, for example, a chip in a thin film gas sensor structure of patent CN1947007 comprises a gas sensing resistor, a temperature sensing resistor and a heating resistor; the patent CN 105388937a discloses a precise constant temperature control method and device for a gas sensor, which includes modules such as a sensitive probe, a control box, and an ambient temperature detection assembly, all of which require constant temperature control technology for the sensor. The structure in CN1947007 only includes a hydrogen sensor chip structure, and in practical application, it is also necessary to package it into a probe, and equip it with a complex sensor circuit control box, such as MODEL series products of H2SCAN company, whose minimum size of circuit boxes has reached 23.1mm 8.6mm 3.6mm, and does not include the size of the probe; while CN 105388937a explicitly indicates that the product includes parts such as probes, control boxes, etc., the size will also be larger. That is, the sensitive chip is packaged into a probe and then equipped with a special circuit box, and the probe and the circuit box are connected by an electrical connector or a cable, so that the following problems are caused:
1. the sensitive chip probe and the special circuit box are mutually independent and cannot be reduced in size;
2. the sensitive chip probe is connected with the circuit box through the electric connector and the cable, so that the reliability is low and the anti-interference capability is poor;
3. the whole product has complex packaging, production and debugging processes and high cost;
4. and the environmental adaptability such as vibration resistance, high temperature resistance and the like is poor.
With the gradual maturity of hydrogen energy automobile technology, the hydrogen energy automobile technology puts forward more rigorous requirements on the size, reliability, cost and the like of a hydrogen sensor, and the prior art cannot meet the requirements on the hydrogen sensor in the hydrogen energy automobile.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems in the prior art, the invention provides an integrated hydrogen sensor with small volume, low cost and high reliability, and correspondingly provides a manufacturing method of the integrated hydrogen sensor with simple packaging, production and debugging.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
an integrated hydrogen sensor comprises a hydrogen-sensitive film chip, a constant temperature control circuit and a signal processing circuit, wherein the hydrogen-sensitive film chip, the constant temperature control circuit and the signal processing circuit are integrated on the same substrate.
As a further improvement of the above technical solution:
the substrate is Al2O3A ceramic substrate.
The hydrogen sensitive film chip is arranged in the middle of the substrate, and the constant temperature control circuit and the signal processing circuit are respectively positioned on two sides of the hydrogen sensitive film chip.
The invention also discloses a manufacturing method of the integrated hydrogen sensor, which comprises the following steps:
s01, burning and printing a connecting line, an isolating layer, a resistor and a bonding pad on the substrate;
s02, adhering the semiconductor chip and the hydrogen sensitive film chip in the constant temperature control circuit and the signal processing circuit to the reserved position of the substrate, and carrying out adhesive baking treatment;
s03, welding leads at the corresponding positions of the chip bonding pad and the substrate bonding pad to realize electrical connection;
s04, welding capacitors in the constant temperature control circuit and the signal processing circuit at specified positions;
s05, debugging, and adjusting parameters of each resistor and each capacitor;
and S06, performing performance test, and adhering an air duct to the hydrogen sensitive film chip after the performance test is passed.
As a further improvement of the above technical solution:
in step S01, a protective film is fired on the surface of the resistor.
In step S03, a silicon-aluminum wire bonding process is used to bond wires at the corresponding positions of the chip pad and the substrate pad.
In step S04, the capacitor is soldered at a designated position by manual or automatic bonding.
In step S05, the resistance value of the resistor is adjusted by the laser beam.
In step S06, the performance tests include precision, repeatability, stability and dielectric strength performance tests.
In step S06, a protective case is attached to each circuit component on the substrate.
Compared with the prior art, the invention has the advantages that:
according to the integrated hydrogen sensor and the manufacturing method thereof, the three are integrated on the same substrate, so that the integrated hydrogen sensor is small in size, high in reliability, strong in anti-interference capability, simple in packaging, production and debugging, low in cost and good in environmental adaptability.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
FIG. 2 is a schematic view of the structure of the hydrogen-sensitive thin film chip of the present invention.
FIG. 3 is a flow chart of the fabrication of the hydrogen-sensitive thin film chip of the present invention.
Fig. 4 is a schematic circuit diagram of the thermostatic control circuit of the present invention.
Fig. 5 is a schematic circuit diagram of a signal processing circuit according to the present invention.
FIG. 6 is a flow chart of a method of the present invention.
The reference numbers in the figures denote: 1. a hydrogen sensitive thin film chip; 11. a hydrogen sensitive resistor; 12. a temperature measuring resistor; 13. a heating resistor; 14. a pad; 15. a passivation film; 2. a constant temperature control circuit; 3. a signal processing circuit; 4. an air duct; 5. a substrate.
Detailed Description
The invention is further described below with reference to the figures and the specific embodiments of the description.
As shown in fig. 1 to 5, the integrated hydrogen sensor (for example, a palladium alloy thin film resistor type hydrogen sensor) of the present embodiment includes a hydrogen sensitive thin film chip 1, a constant temperature control circuit 2 and a signal processing circuit 3, and the hydrogen sensitive thin film chip 1, the constant temperature control circuit 2 and the signal processing circuit 3 are integrated on the same substrate 5 by a thick film integration technique. Because the three are integrated on the same substrate 5, the product size is small, the reliability is high, the anti-interference capability is strong, the packaging, the production and the debugging are simple, the cost is low, and the environmental adaptability is good.
In this embodiment, the substrate 5 is Al2O3A ceramic substrate.
In the embodiment, the hydrogen sensitive film chip 1 is arranged in the middle of the substrate 5, and the constant temperature control circuit 2 and the signal processing circuit 3 are respectively positioned at two sides of the hydrogen sensitive film chip 1; in other embodiments, the layout is simple and the occupied volume is small.
As shown in fig. 2, in the embodiment, a hydrogen sensitive resistor 11, a heating resistor 13, a temperature measuring resistor 12 and a bonding pad 14 are integrated on a hydrogen sensitive thin film chip 1, the hydrogen sensitive resistor 11 adopts a micromachining technology to fabricate a fold line type palladium-nickel alloy resistor structure on the surface of a single crystal Si wafer, and a wheatstone full-bridge hydrogen sensitive structure mode is adopted, which totally includes four hydrogen sensitive resistors 11 with the same performance parameters, but two surfaces of the hydrogen sensitive resistors are deposited with passivation films 15 and are not sensitive to hydrogen gas, the heating resistor 13 adopts a platinum resistor structure, and the temperature measuring resistor 12 adopts a nickel fold line type resistor structure. When hydrogen is contacted, two hydrogen sensitive resistors 11 are enlarged, the other two hydrogen sensitive resistors are unchanged, and the resistance change value can be converted into a bridge voltage output value through the Wheatstone bridge connection. As shown in fig. 3, the specific process of the hydrogen-sensitive thin film chip 1 is a conventional process, and is not described herein.
As shown in fig. 4, the constant temperature control circuit 2 in this embodiment adopts a PID control mode, both digital PID and analog PID can be realized, the set temperature and the fed back real-time temperature value are differentiated, and the error signal is subjected to proportional, integral, differential, and other processing and then is applied to two ends of the heating resistor 13 to accurately control the temperature of the hydrogen sensitive thin film chip 1 in real time; the constant current source is formed by the operational amplifier U1B, R1, C1 and R2, the current of the constant current source is applied to two ends of the temperature measuring resistor 12, the temperature change is converted into the voltage change through the temperature measuring resistor 12, the voltage is fed back to the negative feedback end of the operational amplifier U1A, U1D, R3, R4 and R5 are given voltage values, the hydrogen-sensitive thin film chip 1 can be controlled at different temperature points by setting different voltages, R6, R7, U1A and C2 form a PI control loop, an error signal is output to R8 to control the magnitude of the Q1 current after passing through a proportional integration link, and then the magnitude of the current on the heating resistor 13 is controlled to realize temperature control.
In this embodiment, the thin film hydrogen sensor chip has a wheatstone structure, outputs mV-level differential voltage, and can output a voltage value required by an actual control system only by conditioning and amplifying the voltage value by instrument operational amplifier, the signal processing circuit 3 is as shown in fig. 5, D1, R10, U1, and C12 constitute a power supply part, outputs a stable voltage VCC, U3B, U3C, U3D, R11, R12, R13, R14, R15, R16, R17, R18, and R19 constitute instrument operational amplifier, and amplifies the mV-level signal output by the hydrogen-sensitive thin film chip 1 to output a specific voltage signal required by a subsequent control system, wherein the amplification factor depends on the magnitudes of R11, R12, and R13, and the magnitude of the partial voltage of zero-point voltage VCC on R19.
The integrated hydrogen sensor is very suitable for detecting hydrogen fuel of a hydrogen energy automobile and is also suitable for all the current hydrogen detection fields.
The invention also correspondingly discloses a manufacturing method based on the integrated hydrogen sensor, which comprises the following steps as shown in fig. 6:
s01, burning and printing the connecting line, the isolating layer, the resistor and the pad 14 on the substrate 5;
s02, pasting the semiconductor chip and the hydrogen sensitive film chip 1 in the constant temperature control circuit 2 and the signal processing circuit 3 at the reserved position of the substrate 5, and carrying out glue drying treatment;
s03, welding leads at the corresponding positions of the chip bonding pad and the bonding pad of the substrate 5 to realize electrical connection;
s04, welding the capacitors in the constant temperature control circuit 2 and the signal processing circuit 3 at the specified positions;
s05, debugging, and adjusting parameters of each resistor and each capacitor;
and S06, performing performance test, and adhering the gas guide tube 4 to the hydrogen-sensitive film chip 1 after the performance test is passed.
The manufacturing method of the invention integrates the hydrogen sensitive thin film chip 1, the constant temperature control circuit 2 and the signal processing circuit 3 on the ceramic substrate 5 by using a thick film hybrid integration technology, thereby realizing the secondary integration of products, not only greatly reducing the size of the products, but also simplifying the assembly process of the system, reducing connecting wires, connectors and welding spots, improving the reliability of the hydrogen sensor, simultaneously reducing the cost of the products and facilitating the mass production of the products.
The method of making the integrated hydrogen sensor of the present invention is further described below with reference to a specific embodiment:
step 1: layout design
The method comprises the following steps of (1) utilizing Cadence or altim design software, combining the size requirement of a substrate 5, drawing a constant temperature control circuit 2 and a signal processing circuit 3 into a PCB layout, wherein the PCB layout comprises a reserved resistance position, a connecting wire, a capacitor bonding pad, active devices and bonding pads of a hydrogen sensitive thin film chip 1, the whole layout is shown in figure 1, wherein the hydrogen sensitive thin film chip 1 is positioned in the middle of the substrate 5, the constant temperature control circuit 2 and the signal processing circuit 3 are positioned on two sides of the hydrogen sensitive thin film chip 1, and corresponding mask plates are manufactured according to the PCB layout;
step 2: preparing the substrate 5, screen, paste, etc
According to different product use environments or firing process requirements, different materials can be selected, the substrate 5 in the embodiment is a conventional Al2O3 ceramic substrate, the wire mesh is a 316 stainless steel wire mesh, the conductor slurry is Ag-Pd slurry, the resistance slurry is glass glaze resistance slurry, and the dielectric slurry is ceramic powder slurry;
and step 3: burning printing connecting line, isolating layer, resistor and welding disc
Respectively printing the materials in the step (2) on a substrate (5) by adopting a screen printing technology, and baking and sintering the printed wet film to finish the manufacturing process of the connecting line, the isolating layer, the resistor and the bonding pad;
and 4, step 4: resistor surface treatment
In order to prevent the thick film resistor from being oxidized or corroded, the surface of the thick film resistor needs to be treated, and a protective film is printed on the surface of the thick film resistor by the printing process in the step 3;
and 5: hydrogen sensitive film chip 1 and semiconductor chip bonding
Adopting special chip adhesive to adhere semiconductor chips such as the thin film hydrogen sensitive thin film chip 1, an operational amplifier, a triode, a voltage-stabilized power supply and the like at a reserved position of the substrate 5, and carrying out 24-hour glue drying treatment at 60 ℃;
step 6: chip lead
Welding leads at the corresponding positions of the chip bonding pad and the substrate 5 bonding pad by adopting a silicon-aluminum wire binding process to realize electrical connection;
and 7: capacitor mounting
Welding the capacitor at a designated position by adopting a manual or automatic surface mounting mode;
and 8: circuit debugging
8.1, controlling the chip at a set temperature point through the constant temperature control circuit 2, wherein the set temperature point is set by giving different Vref1, and the PI parameter of the temperature control loop is realized by adjusting the sizes of R7 and C2 in the constant temperature control circuit 2;
8.2, the output of the sensor is adjusted to be standard signal output, such as 1-5V, the amplification factor is realized by adjusting the size of R11 in the signal processing circuit 3, and the zero output is realized by adjusting the size of R19;
and step 9: laser resistance trimming
According to the resistance value required in the step 8, modifying R11 and R19 by using laser beams by using laser resistance adjusting equipment to accurately obtain the required resistance;
step 10: testing
Testing various performance indexes of the hydrogen sensor, including precision, repeatability, stability, insulation strength and the like;
step 11: package with a metal layer
And (3) covering a plastic protective shell on the surface of each circuit component on the substrate 5 aiming at the product with qualified performance indexes in the step 10, adhering the plastic protective shell by using epoxy glue to ensure good insulation and three-proofing performance, and finally adhering the gas guide tube 4 at the position of the thin film hydrogen sensitive thin film chip 1 to finish the manufacture.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (9)
1. An integrated hydrogen sensor comprises a hydrogen sensitive film chip (1), a constant temperature control circuit (2) and a signal processing circuit (3), and is characterized in that the hydrogen sensitive film chip (1), the constant temperature control circuit (2) and the signal processing circuit (3) are integrated on the same substrate (5); the hydrogen-sensitive film chip (1) is arranged in the middle of the substrate (5), and the constant temperature control circuit (2) and the signal processing circuit (3) are respectively positioned on two sides of the hydrogen-sensitive film chip (1).
2. Integrated hydrogen sensor according to claim 1, characterised in that the substrate (5) is Al2O3A ceramic substrate.
3. A method for manufacturing an integrated hydrogen sensor according to any one of claims 1 to 2, comprising the following steps:
s01, burning and printing a connecting line, an isolating layer, a resistor and a bonding pad on the substrate (5);
s02, pasting the semiconductor chip and the hydrogen sensitive film chip (1) in the constant temperature control circuit (2) and the signal processing circuit (3) at the reserved position of the substrate (5), and carrying out glue drying treatment;
s03, welding leads at the corresponding positions of the chip bonding pad and the bonding pad of the substrate (5) to realize electrical connection;
s04, welding capacitors in the constant temperature control circuit (2) and the signal processing circuit (3) at specified positions;
s05, debugging, and adjusting parameters of each resistor and each capacitor;
and S06, performing performance test, and adhering the gas guide tube (4) to the hydrogen sensitive film chip (1) after the performance test is passed.
4. The method of claim 3, wherein in step S01, a protective film is printed on the resistor surface.
5. The method of claim 3, wherein in step S03, the bonding wire is bonded to the chip pad and the corresponding position of the substrate (5) pad by using a silicon-aluminum wire bonding process.
6. The method of claim 3, wherein the capacitor is soldered at the designated position in step S04 by manual or automatic bonding.
7. The method of claim 3, wherein in step S05, the resistance of the resistor is adjusted by a laser beam.
8. The method of manufacturing of claim 3, wherein in step S06, the performance test includes precision, repeatability, stability and dielectric strength performance tests.
9. The manufacturing method according to claim 3, wherein in step S06, a protective case is pasted on each circuit component on the substrate (5).
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| CN112611788A (en) * | 2020-12-28 | 2021-04-06 | 山东大学 | Semiconductor hydrogen sulfide gas sensor |
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