CN106997844A - The manufacture method and metal film etchant of array substrate for display device - Google Patents
The manufacture method and metal film etchant of array substrate for display device Download PDFInfo
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- CN106997844A CN106997844A CN201611020850.3A CN201611020850A CN106997844A CN 106997844 A CN106997844 A CN 106997844A CN 201611020850 A CN201611020850 A CN 201611020850A CN 106997844 A CN106997844 A CN 106997844A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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Abstract
The present invention relates to the manufacture method of array substrate for display device and metal film etchant.The etchant is included：(A) hydrogen peroxide, (B) fluorochemical, (C) azole compounds, (D) an intramolecular have nitrogen-atoms and carboxyl water soluble compound, (E) metaphosphate, (F) EPE polyol EPE and (G) deionized water.Feature when being etched with the etchant of the present invention is as follows：Copper system metallic film and thick film can in the lump be etched, it is small with the processing increased lateral erosion of number and cone angle variable quantity.
Description
Technical field
The present invention relates to the manufacture method of array substrate for display device and metal film etchant.
Background technology
The step of process for forming metal wiring in semiconductor device on substrate generally includes to utilize following process：Utilize
The metal film formation process of sputtering etc., is coated with using photoresist, exposed and developed forms photic anti-in selective area
The process and etching work procedure of agent are lost, and including matting before and after Individual cells process etc..Such etching work procedure refers to,
Using photoresist as mask, the process for leaving metal film in selective area, usually using doing using plasma etc.
Formula etches or utilized the Wet-type etching of etchant.
In the past, it is golden with other using aluminium or its alloy has been laminated as gate electrode and source/drain electrode wiring material
The metal film of category.Aluminium is although cheap and resistance is low, but chemical resistance is not good, and following liquid crystal surface can be induced in subsequent handling
The operation of plate is bad：Trigger short-circuit (short) phenomenon with other conductive layers because projection (hillock) etc. is bad, or because with oxygen
The contact of compound layer and form insulating barrier etc..
In view of it is such the problem of, be used as gate electrode and source/drain electrode wiring material, it is proposed that copper system metal film
With multilayer film (the KR published patent 10- of the copper system metal film such as molybdenum film, copper film and molybdenum alloy film, tin-copper alloy film and molybdenum alloy film
No. 2007-0055259).However, the multilayer film in order to etch such copper system metal film, exists and has to using different from each other
Two kinds of etching solutions etch the shortcoming of each metal film.
In addition, for when conventional etching solution, with the progress of etching work procedure, cone angle and lateral erosion change are increased,
Understand and trigger problem in subsequent handling, and also presence needs what is often more renewed because of sharply increasing for copper ion in etching solution
The problem of economic aspect of etching solution.
Prior art problem
Patent document
Patent document 1：KR published patent 10-2007-0055259
The content of the invention
Problem to be solved
The problem of in order to solve above-mentioned conventional art, is there is provided the manufacture method of array substrate for display device, by above-mentioned system
Make the array substrate for display device and metal film etchant of method manufacture.
The method for solving problem
The present invention provides a kind of manufacture method of array substrate for display device, it is characterised in that including：
A) the step of forming gate wirings on substrate；
B) the step of forming gate insulator on the substrate comprising above-mentioned gate wirings；
C) the step of forming semiconductor layer on above-mentioned gate insulator；
D) the step of forming source electrode and drain electrode on above-mentioned semiconductor layer；And
E) the step of forming the pixel electrode being connected with above-mentioned drain electrode,
Above-mentioned a) step includes：Copper system metal film is formed on substrate, and above-mentioned copper system gold is etched with etchant
The step of belonging to film and form gate wirings, above-mentioned d) step includes：Copper system metal film is formed on the semiconductor layer, and uses etching solution
The step of composition etches above-mentioned copper system metal film and forms source electrode and drain electrode,
Above-mentioned etchant is included：(A) hydrogen peroxide, (B) fluorochemical, (C) azole compounds, (D) are one
Individual intramolecular has the water soluble compound of nitrogen-atoms and carboxyl, (E) metaphosphate (metaphosphate), (F) polyol type
Surfactant and (G) deionized water.
In one embodiment, above-mentioned etchant can be included on the basis of composition total weight：(A) peroxide
Change the weight % of hydrogen 15~25, the weight % of (B) fluorochemical 0.01~3, the weight % of (C) azole compounds 0.1~2, (D) one
Individual intramolecular have the weight % of water soluble compound 0.5~5 of nitrogen-atoms and carboxyl, the weight % of (E) metaphosphate 0.1~5,
(F) deionized water of the weight % of EPE polyol EPE 1.0~5 and (G) surplus.
In another embodiment, array substrate for display device can be thin film transistor (TFT) (TFT) array base palte.
In addition, the present invention provides the array substrate for display device manufactured by above-mentioned manufacture method.
In addition, the present invention provides a kind of metal film etchant, it is characterised in that include：(A) hydrogen peroxide,
(B) fluorochemical, (C) azole compounds, (D) have water soluble compound, (E) of nitrogen-atoms and carboxyl in an intramolecular
Metaphosphate, F) EPE polyol EPE and (G) deionized water.
In one embodiment, above-mentioned metal film etchant can be wrapped on the basis of composition total weight
Contain：(A) the weight % of hydrogen peroxide 15~25, the weight % of (B) fluorochemical 0.01~3, the weight of (C) azole compounds 0.1~2
Amount %, (D) have the weight % of water soluble compound 0.5~5, (E) metaphosphate 0.1 of nitrogen-atoms and carboxyl in an intramolecular
~5 weight %, the weight % of (F) EPE polyol EPE 1.0~5 and (G) surplus deionized water.
In another embodiment, above-mentioned metal film can be copper system metal film.
In addition, in another embodiment, above-mentioned copper system metal film is the monofilm of copper or copper alloy；Or comprising selected from
One or more of copper film and tin-copper alloy film film and the multilayer film selected from one or more of molybdenum film and molybdenum alloy film film.
Invention effect
, can be by copper system metallic film and thick film one in the case where etching metal film with the etchant of the present invention
And etch, and can make to minimize with the processing increased lateral erosion of number and cone angle variable quantity.
Embodiment
The array base palte that is manufactured the present invention relates to the manufacture method of array substrate for display device, by above-mentioned manufacture method and
Metal film etchant.
It is a feature of the present invention that：By comprising metaphosphate (metaphosphate), so that entering with etching work procedure
OK, even if the concentration of copper ion increases in reagent, the rising degree of cone angle is also little, and lateral erosion change is also small.
Hereinafter, the present invention is described in detail.
The present invention provides a kind of metal film etchant, it is characterised in that include：(A) hydrogen peroxide, (B) contain
Fluorine compounds, (C) azole compounds, (D) have the inclined phosphorus of the water soluble compound of nitrogen-atoms and carboxyl, (E) in an intramolecular
Hydrochlorate, F) EPE polyol EPE and (G) deionized water.
Above-mentioned metal film can be copper system metal film,
Above-mentioned copper system metal film includes copper (Cu) in the constituent of film, and is to include more than monofilm and duplicature
Multilayer film concept.More specifically, the concept of above-mentioned copper system metal film includes the individual layer of copper or copper alloy (Cu alloy)
Film；Or comprising selected from one or more of above-mentioned copper film and tin-copper alloy film film and selected from one or more of molybdenum film and molybdenum alloy film
The multilayer film of film.
Above-mentioned copper system metal film is not particularly limited, as the specific example of above-mentioned monofilm, can enumerate copper (Cu) film；Or
Using copper as principal component, and comprising selected from neodymium (Nd), tantalum (Ta), indium (In), palladium (Pd), niobium (Nb), nickel (Ni), chromium (Cr), magnesium
(Mg), one or more of tungsten (W), protactinium (Pa) and titanium (Ti) tin-copper alloy film of metal etc..
In addition, as the example of multilayer film, copper/molybdenum film, copper/molybdenum alloy film, copper alloy/molybdenum film, copper alloy/molybdenum can be enumerated
The duplicatures such as alloy film, or copper/molybdenum/copper film trilamellar membrane.
In addition, above-mentioned molybdenum alloy film refers to, by selected from such as titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and
The layer that the alloy of one or more of indium (In) metal and molybdenum is constituted.
Here, the concept of so-called alloy film also includes nitride film or metal oxide film.
Particularly, etchant of the invention is preferably applied to be made up of copper or tin-copper alloy film and molybdenum or molybdenum alloy film
Multilayer film.
Hereinafter, each composition of the etchant to constituting the present invention is illustrated.
(A) hydrogen peroxide (H2O2)
Hydrogen peroxide is that the primary oxidant impacted to the etching speed of copper system metal film (is included to copper system metal film
The etching speed of alloy film also result in influence).
Above-mentioned hydrogen peroxide can contain 15~25 weight % on the basis of composition total weight.If based on said reference
The content of hydrogen peroxide is less than 15 weight %, then the etching speed of copper system metal film possibly can not realize sufficient etching slowly,
If it exceeds 25 weight %, then the concentration of hydrogen peroxide, which becomes stability that is too high and may making etching solution, reduces.Preferably comprise
18~23 weight % hydrogen peroxide.
(B) fluorochemical
Fluorochemical included in the etchant of the present invention is to refer to be dissociated and carried in water etc.
For fluorine ion (F-) compound.Above-mentioned fluorochemical is to molybdenum system when etching includes the copper system metal film of molybdenum or molybdenum alloy
The pro-oxidant that the etching speed of film is impacted, above-mentioned molybdenum system film preferably can be molybdenum alloy film.
Above-mentioned fluorochemical is using fluorochemical usually used in the art, as long as it can solve in the solution
The compound of fluorine ion or polyatom fluorine ion is separated out, then its species is not particularly limited.
As specific example, it can preferably use selected from hydrogen fluoride (HF), sodium fluoride (NaF), ammonium fluoride (NH4F), fluorine
Ammonium borate (NH4BF4), ammonium acid fluoride (NH4FHF), potassium fluoride (KF), potassium hydrogen fluoride (KHF2), aluminum fluoride (AlF3) and tetrafluoro boron
Acid (HBF4One or more of).Ammonium acid fluoride (NH can more preferably be used4FHF)。
Above-mentioned fluorochemical includes 0.01~3 weight % relative to etchant gross weight, more preferably includes
0.05~1 weight %.If the content of above-mentioned fluorochemical is less than 0.01 weight %, the etching speed of molybdenum alloy film becomes
Slowly, it is possible to create residue.On the other hand, in the case of more than 3 weight %, although the etching performance of molybdenum alloy film is improved, but
Because etching speed is too fast, it is thus possible to occur undercutting (under cut) phenomenon or lower layer (n+a-Si:H, a-Si:G erosion)
Carve damage.
(C) azole compounds
Azole compounds adjust the etching speed with the copper wiring (data (Data) distribution) of copper system metal diaphragm contacts.
Above-mentioned azole compounds can contain 0.1~2 weight % on the basis of etchant gross weight.If based on
The content of said reference azole compounds is less than 0.1 weight %, then copper wiring etching speed increases and erosion is prevented under effect
Drop, if it exceeds 2 weight %, then copper system metal film etching speed reduction, it is thus possible to occur activity time loss.
As above-mentioned azole compounds, for example, it can enumerate pyrroles (pyrrole) based compound, pyrazoles (pyrazol) system
Compound, imidazoles (imidazole) based compound, triazole (triazole) based compound, tetrazolium (tetrazole) are chemical combination
Thing, pentazole (pentazole) based compound,It is azoles (oxazole) based compound, differentAzoles (isoxazole) based compound,
Thiazole (thiazole) based compound, isothiazole (isothiazole) based compound etc., they can be used alone one kind or one
With using two or more.Wherein, preferably triazole (triazole) based compound, desirably BTA
(benzotriazole)。
(D) there is the water soluble compound of nitrogen-atoms and carboxyl in an intramolecular
May when there is an intramolecular water soluble compound of nitrogen-atoms and carboxyl to prevent keeping etchant
The selfdecomposition reaction of the hydrogen peroxide of generation, and when being etched to substantial amounts of substrate, prevent etching characteristic from changing.
In general, in the case of using the etchant of aquae hydrogenii dioxidi, due to aquae hydrogenii dioxidi during keeping
Generation selfdecomposition and its storage time it is not long, also tool there is a possibility that the hazards of container explosion.But, comprising above-mentioned one
In the case that individual intramolecular has the water soluble compound of nitrogen-atoms and carboxyl, the decomposition rate reduction nearly 10 of aquae hydrogenii dioxidi
Times, so that it is advantageously ensured that storage time and stability.Particularly, it is a large amount of in etchant in the case of layers of copper
When remaining copper ion, the phenomenon for forming passivation (passivation) film and being no longer etched after oxidizing blackening may occur more.
But, it is above-mentioned in the case where an intramolecular has the water soluble compound of nitrogen-atoms and carboxyl adding, it can prevent
State phenomenon.
It is above-mentioned an intramolecular have the water soluble compound of nitrogen-atoms and carboxyl using etchant gross weight as
Benchmark can contain 0.5~5.0 weight %.There is the water-soluble of nitrogen-atoms and carboxyl in an intramolecular if based on said reference
Property compound content be less than 0.5 weight %, then passivating film can be formed by etching after substantial amounts of substrate (about 500), so as to be difficult to
Obtain sufficient operation allowance.On the other hand, if it exceeds 5 weight %, then the etching speed of copper system metal film is slack-off, therefore can
The problem of occurring to produce residue.
It is preferred that 1.0~3.0 weight % water-soluble chemical combination in an intramolecular with nitrogen-atoms and carboxyl can be included
Thing.
The above-mentioned water soluble compound for having nitrogen-atoms and carboxyl in an intramolecular can enumerate alanine
(alanine), aminobutyric acid (aminobutyric acid), glutamic acid (glutamic acid), glycine (glycine),
Iminodiacetic acid (iminodiacetic acid), nitrilotriacetic acid (nitrilotriacetic acid) and methyl amimoacetic acid
(sarcosine).Also, wherein it is most preferably iminodiacetic acid (iminodiacetic acid).
(E) metaphosphate (metaphosphate)
Metaphosphate, which is played, to be reduced with copper etching speed and the increased lateral erosion of copper concentration and the effect of cone angle variable quantity.If
Above-mentioned metaphosphate is not present in etching solution, then copper etching speed it is slack-off or may make with the increased lateral erosion of copper concentration and
Cone angle variable quantity is greatly increased.
The content of above-mentioned metaphosphate can be 0.1~5 weight % on the basis of composition total weight.If based on above-mentioned
The content of benchmark metaphosphate is less than 0.1 weight %, then copper etching speed is slack-off, changes with the increased lateral erosion of copper concentration and cone angle
Amount increase, if based on said reference more than 5 weight %, then copper etching speed is too fast and regulation is difficult, also, increases with copper concentration
Plus, lateral erosion and cone angle variable quantity on the contrary may increases.
It is preferred that 0.1~3.0 weight % metaphosphate can be included.
Above-mentioned metaphosphate can enumerate sodium trimetaphosphate (Sodium Trimetaphosphate), four sodium metaphosphates
(Sodium Tetrametaphosphate), calgon (Sodium hexametaphosphate) etc..
(F) EPE polyol EPE
EPE polyol EPE plays the effect for reducing surface tension and improving etch uniformity.In addition, above-mentioned many
First alcohol type surfactant is by being enclosed in copper ion of the dissolution into etching solution after etching, so as to suppress the work of copper ion
Spend to suppress the decomposition reaction of hydrogen peroxide., can be during using etching solution if so reducing the activity of copper ion
Stably carry out process.
The content of above-mentioned EPE polyol EPE can be 1.0~5.0 weight % on the basis of composition total weight.
In the case where the content based on said reference EPE polyol EPE is less than 1.0 weight %, it may occur that etching is equal
The problem of even property reduction, the decomposition of hydrogen peroxide accelerate.If it exceeds 5 weight %, then have the shortcomings that to produce a large amount of foams.
Above-mentioned EPE polyol EPE can enumerate glycerine (glycerol), triethylene glycol (triethylene
) and polyethylene glycol (polyethylene glycol) etc. glycol.Also, wherein it is preferably triethylene glycol.
(G) water
Water included in the etchant of the present invention is not particularly limited, as semiconductor process water, preferably
Using deionized water, more preferably gone using display from water deionization degree resistivity value for 18M Ω/more than cm go from
Sub- water.
The copper system metal film etchant of the present invention can be included further in addition to the above-mentioned composition referred to
Selected from etching conditioning agent, sequestering agent, anticorrosive, pH adjusting agent and be not limited in these other additives it is a kind of with
On.In order to realize the effect of the present invention better within the scope of the invention, above-mentioned additive can be usual in the art
Selection is used in the additive used.
In addition, the present invention provides a kind of manufacture method of array substrate for display device, it is characterised in that including：
A) the step of forming gate wirings on substrate；
B) the step of forming gate insulator on the substrate comprising above-mentioned gate wirings；
C) the step of forming semiconductor layer on above-mentioned gate insulator；
D) the step of forming source electrode and drain electrode on above-mentioned semiconductor layer；And
E) the step of forming the pixel electrode being connected with above-mentioned drain electrode,
Above-mentioned a) step includes：Copper system metal film is formed on substrate, and above-mentioned copper system gold is etched with etchant
The step of belonging to film and form gate wirings, above-mentioned d) step includes：Copper system metal film is formed on the semiconductor layer, and uses etching solution
The step of composition etches above-mentioned copper system metal film and forms source electrode and drain electrode,
Above-mentioned etchant is included：(A) hydrogen peroxide, (B) fluorochemical, (C) azole compounds, (D) are one
Individual intramolecular has the water soluble compound of nitrogen-atoms and carboxyl, (E) metaphosphate, (F) EPE polyol EPE and (G)
Deionized water.
Explanation for above-mentioned metal film is as described above.
Above-mentioned array substrate for display device can be thin film transistor (TFT) (TFT) array base palte.
In addition, the present invention provides the array substrate for display device manufactured by above-mentioned manufacture method.
Hereinafter, the present invention is described in more detail using embodiment, comparative example and experimental example.But following embodiments, compare
Example and experimental example are used to illustrate the present invention, and the present invention is not limited by following embodiments, comparative example and experimental example, can be diversely
Modify and change.
The manufacture of embodiment 1~6 and the etchant of comparative example 1~4.
According to the composition of table 1 below and content (unit：Weight %), manufacture etchant 6kg.
[table 1]
| Distinguish | H2O2 | ABF | 5-MTZ | IDA | STMP | SHMP | NHP | TEG | Deionized water |
| Embodiment 1 | 18 | 0.1 | 0.12 | 2.0 | - | 0.1 | - | 1.0 | Surplus |
| Embodiment 2 | 18 | 0.1 | 0.12 | 2.0 | - | 0.3 | - | 1.0 | Surplus |
| Embodiment 3 | 20 | 0.1 | 0.15 | 2.5 | - | 1.0 | - | 2.0 | Surplus |
| Embodiment 4 | 23 | 0.1 | 0.15 | 2.5 | - | 3.0 | - | 2.0 | Surplus |
| Embodiment 5 | 18 | 0.1 | 0.12 | 2.0 | 0.3 | - | - | 1.0 | Surplus |
| Embodiment 6 | 20 | 0.1 | 0.15 | 2.5 | 1.0 | - | - | 2.0 | Surplus |
| Comparative example 1 | 18 | 0.1 | 0.12 | 2.0 | 0.3 | - | 1.0 | 1.0 | Surplus |
| Comparative example 2 | 18 | 0.1 | 0.12 | 2.0 | 1.0 | 0.01 | - | 1.0 | Surplus |
| Comparative example 3 | 20 | 0.1 | 0.15 | 2.5 | - | 7.0 | - | 2.0 | Surplus |
| Comparative example 4 | 23 | 0.1 | 0.15 | 2.5 | - | - | - | 2.0 | Surplus |
ABF：Ammonium acid fluoride (ammonium bifluoride)
5-MTZ：5- methyl tetrazolium (5-methyltetrazole)
IDA：Iminodiacetic acid (iminodiacetic acid)
STMP：Sodium trimetaphosphate (sodium Trimetaphosphate)
SHMP：Calgon (sodium hexametaphosphate)
NHP：Sodium phosphate (sodium phosphates)
TEG：Triethylene glycol (triethyleneglycol)
Experimental example etching characteristics are evaluated
Respectively using embodiment 1~6 and the etchant of comparative example 1~4, implement etching work procedure.
Specifically, the experimental assembly (model name of injecting type etching mode is utilized：ETCHER (TFT), SEMES are public
Department), when being etched process, the temperature of etchant is set to about 33 DEG C or so.Although etching period is according to etching temperature
Spend and possible difference, but generally 50~80 seconds degree of progress in LCD etching work procedures.For what is be etched in above-mentioned etching work procedure
Copper system metal film profile, checks section, and result is recorded in down using SEM (Hitachi, Ltd's product, model name S-4700)
State table 2.For the copper system metal film used in etching work procedure, Cu/Mo-Ti has been usedFilm.
Determine the lateral erosion (μm) changed with Cu concentration (300~7000ppm) and cone angle (°) variable quantity.
Lateral erosion refers to the distance between side photoresist end and lower metal end determined after etching.If
Side etching quantity changes, then when TFT drives, signal transmission speed changes and may occur speckle, therefore preferably by side
Variable quantity is lost to minimize.
Cone angle refers to the gradient on copper (Cu) inclined-plane.If cone angle is too high, occurs Step Coverage when subsequent film is deposited
Crackle (crack) phenomenon caused by (step coverage) is bad, therefore maintain appropriate cone angle to be important.Generally, if
Relative to cone angle increase at initial stage to a certain degree, then fraction defective is likely to increase in subsequent handling, thus can be by the etching solution used
Composition is substituted for new etchant.
In this evaluation, in the condition that the variable quantity for meeting condition that lateral erosion variable quantity is ± 0.1 μm and cone angle is ± 10 °
In the case of, regulation can continue on for etchant etching work procedure, and implement experiment.
<Etching outline metewand>
○：Well
△：Commonly
Х：Difference
[table 2]
| Distinguish | Etching outline | Lateral erosion variable quantity (μm) | Cone angle variable quantity (°) |
| Embodiment 1 | ○ | 0.10 | 10 |
| Embodiment 2 | ○ | 0.10 | 8 |
| Embodiment 3 | ○ | 0.08 | 7 |
| Embodiment 4 | ○ | 0.09 | 10 |
| Embodiment 5 | ○ | 0.08 | 9 |
| Embodiment 6 | ○ | 0.09 | 10 |
| Comparative example 1 | △ | 0.22 | 20 |
| Comparative example 2 | ○ | 0.30 | 20 |
| Comparative example 3 | ○ | 0.27 | 23 |
| Comparative example 4 | Х | 0.80 | 31 |
As shown in table 2, the etchant of embodiment 1~6 shows good etching characteristic.Particularly, with reality
When applying the etchant etching of example 3, etching outline and rectilinear propagation are excellent, and do not produce Mo, Ti residue.With comparative example 1
~4 compare, embodiment 1~4 in terms of the lateral erosion and cone angle variable quantity on display that excellent result.
Claims (12)
1. a kind of manufacture method of array substrate for display device, it is characterised in that including：
A) the step of forming gate wirings on substrate；
B) the step of forming gate insulator on the substrate comprising the gate wirings；
C) the step of forming semiconductor layer on the gate insulator；
D) the step of forming source electrode and drain electrode on the semiconductor layer；And
E) the step of forming the pixel electrode being connected with the drain electrode,
A) the step includes：Copper system metal film is formed on substrate, and the copper system metal film is etched with etchant
And the step of form gate wirings, the d) step includes：Copper system metal film is formed on the semiconductor layer, and is combined with etching solution
The step of thing etches the copper system metal film and forms source electrode and drain electrode,
The etchant is included：(A) hydrogen peroxide, (B) fluorochemical, (C) azole compounds, (D) are at one point
Water soluble compound, (E) metaphosphate, (F) EPE polyol EPE and (G) with nitrogen-atoms and carboxyl in sub go from
Sub- water.
2. the manufacture method of array substrate for display device according to claim 1, it is characterised in that the etching solution group
Compound is included on the basis of composition total weight：(A) the weight % of hydrogen peroxide 15~25, the weight of (B) fluorochemical 0.01~3
Amount %, the weight % of (C) azole compounds 0.1~2, (D) have the water soluble compound of nitrogen-atoms and carboxyl in an intramolecular
0.5~5 weight %, the weight % of (E) metaphosphate 0.1~5, the weight % of (F) EPE polyol EPE 1.0~5 and (G) are remaining
The deionized water of amount.
3. the manufacture method of array substrate for display device according to claim 1, it is characterised in that the display device
It is thin-film transistor array base-plate with array base palte.
4. a kind of metal film etchant, it is characterised in that include：(A) hydrogen peroxide, (B) fluorochemical, (C)
Azole compounds, (D) have the water soluble compound, (E) metaphosphate, F of nitrogen-atoms and carboxyl in an intramolecular) polyalcohol
Type surfactant and (G) deionized water.
5. metal film etchant according to claim 4, it is characterised in that metal film etching solution group
Compound is included on the basis of composition total weight：(A) the weight % of hydrogen peroxide 15~25, the weight of (B) fluorochemical 0.01~3
Amount %, the weight % of (C) azole compounds 0.1~2, (D) have the water soluble compound of nitrogen-atoms and carboxyl in an intramolecular
0.5~5 weight %, the weight % of (E) metaphosphate 0.1~5, the weight % of (F) EPE polyol EPE 1.0~5 and (G) are remaining
The deionized water of amount.
6. metal film etchant according to claim 4, it is characterised in that the fluorochemical is to be selected from
It is made up of hydrogen fluoride, sodium fluoride, ammonium fluoride, ammonium fluoroborate, ammonium acid fluoride, potassium fluoride, potassium hydrogen fluoride, aluminum fluoride and tetrafluoro boric acid
One or more of group.
7. metal film etchant according to claim 4, it is characterised in that the azole compounds are to be selected from
By pyrroles's based compound, pyrazoles based compound, imidazole compound, three azole compounds, four azole compounds, pentazole system chemical combination
Thing,It is azole compounds, differentOne kind in the group of azole compounds, thiazole compound and isothiazole based compound composition
More than.
8. metal film etchant according to claim 4, it is characterised in that described to have in an intramolecular
The water soluble compound of nitrogen-atoms and carboxyl be selected from by alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid,
One or more of group of nitrilotriacetic acid and methyl amimoacetic acid composition.
9. metal film etchant according to claim 4, it is characterised in that the metaphosphate be selected from by
One or more of group of sodium trimetaphosphate, four sodium metaphosphates and calgon composition.
10. metal film etchant according to claim 4, it is characterised in that live on the polyol type surface
Property agent be selected from one or more of group for being made up of glycerine, triethylene glycol and polyethylene glycol.
11. metal film etchant according to claim 4, it is characterised in that the metal film is copper system gold
Belong to film.
12. metal film etchant according to claim 11, it is characterised in that the copper system metal film is copper
Or the monofilm of copper alloy, or comprising selected from one or more of copper film and tin-copper alloy film film and in molybdenum film and molybdenum alloy film
More than one films multilayer film.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160009588A KR102412268B1 (en) | 2016-01-26 | 2016-01-26 | Manufacturing method of an array substrate for crystal display |
| KR10-2016-0009588 | 2016-01-26 |
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| CN106997844A true CN106997844A (en) | 2017-08-01 |
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| KR (1) | KR102412268B1 (en) |
| CN (1) | CN106997844A (en) |
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| CN113046747A (en) * | 2021-03-04 | 2021-06-29 | 四川和晟达电子科技有限公司 | Laminated metal and metal oxide etching solution composition and using method thereof |
| CN114075669A (en) * | 2020-08-10 | 2022-02-22 | 东友精细化工有限公司 | Etchant composition, method for forming wiring, and method for manufacturing array substrate for liquid crystal display device |
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| CN113046747A (en) * | 2021-03-04 | 2021-06-29 | 四川和晟达电子科技有限公司 | Laminated metal and metal oxide etching solution composition and using method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170089315A (en) | 2017-08-03 |
| KR102412268B1 (en) | 2022-06-23 |
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