CN107964681A - The continuous growing method of silicon crystal - Google Patents
The continuous growing method of silicon crystal Download PDFInfo
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- CN107964681A CN107964681A CN201711358345.4A CN201711358345A CN107964681A CN 107964681 A CN107964681 A CN 107964681A CN 201711358345 A CN201711358345 A CN 201711358345A CN 107964681 A CN107964681 A CN 107964681A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention discloses a kind of continuous growing method of silicon crystal, is particularly suitable for monocrystalline silicon, the preparation of quasi-monocrystalline silicon and polysilicon.The device that the method uses has double melting zones：Main working chamber can be used for crystal growth, and the auxiliary working chamber that feeds intake can be used as continuous high temperature melt material charging region.Aid in the working chamber that feeds intake：Sensing heating magnetic field equipped with twoth area, for being heated to polycrystal material.When after the material of upper smelting system is used up crucible feed opening induction coil power-off after have the function that force cooling so that polycrystal material solidification seals feed opening.There are two groups of electromagnetic confinement magnetic fields in continuous dosing area, controls the up and down motion of melt.Crystal growth area has electromagnetic confinement magnetic field so that melt oriented growth under conditions of no side wall crucible.High-temperature fusant material repeatedly can be thrown to crystal growth area by material charging region, realize the steady and continuous growth of crystal.
Description
Technical field
The present invention relates to the preparation method technical field of semiconductor crystal, more particularly to one kind to be suitable for monocrystalline silicon, quasi- list
The continuous growing method of crystal silicon and polysilicon.
Background technology
Semiconductor crystalline material is widely used in microelectronics and optoelectronic areas, available for solar cell is prepared, collects
Into circuit etc..Semiconductor crystalline material is one of basic material of modern information technologies, and wherein silicon is most widely used.Crystal
Bigger, cost is lower.The purity of material is better, and the physical characteristic of crystal is better.
Electromagnetic confinement technology is a kind of method of smelting risen recently, since melt is not contacted with crucible during melting, institute
The material of melting is clean, and the shape control of material can be realized by this method.Electromagnetic constrained shaping is produced using inductor
Raw alternating magnetic field, induces vortex flow, vortex flow is under the action of Lorentz force, in melt by galvanomagnetic-effect in bath surface
Middle formation restraining force, constrains so as to fulfill to melt.In general, the production of electromagnetic induction method repeats the company of above-mentioned feed phase technique
It is continuous to feed intake, it is that polycrystal material is previously positioned in furnace chamber, is then being cast during regrowth, inventory is limited.
Electromagnetic technique is suitable for magnetic conduction and the metal material of well conducting.For semi-conducting material, such as silicon first has to pair
Semiconductor is heated, and electromagnetic induction effect can be realized by then applying electromagnetic field again, the above-mentioned feed supplement of repetition such as risen at present
" hump " electromagnetic cold crucible melting technique of stage process etc., can form bath surface protrusion, i.e., under the action of electromagnetic force
（That is liquid level raises up phenomenon）Occur.
The content of the invention
The technical problems to be solved by the invention are how to provide one kind can continuously grow high-purity large size single crystal silicon, standard
The method of monocrystalline silicon and polysilicon.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of continuous growing of monocrystalline silicon method,
It is characterised in that it includes following steps：
The stock stage：Firstly, for for quasi- monocrystalline, it is necessary to according to consistent crystal orientation by multiple signle crystasl material in main working chamber's crucible
Sequence and be covered with main working chamber's crucible.Lastblock single crystal seed is only put for continuous crystal growth.Then polycrystal material is placed
In feeding intake working chamber's crucible to auxiliary, by furnace sealing, preset value is evacuated to, and is filled with the inert gas of preset value, is opened
Crucible water-cooling system so that the bottom of main working chamber's crucible obtains water-cooled effect；Open main molten refining chamber heater and give main working chamber
Multiple signle crystasl material heating in crucible, until the multiple signle crystasl material top half fusing in crucible, is then turned on main electromagnetic confinement
Inductor so that the melt of fusing is constrained be subject to electromagnetic force in main working chamber's crucible, is raised up；
The melt stage：After Melt Stability in main working chamber's crucible, open auxiliary feed intake working chamber lower part feed opening electromagnetism about
Beam inductor, and open that auxiliary feeds intake working chamber's main induction coil and auxiliary feeds intake working chamber's primary heater, feed intake to auxiliary
Polycrystal material heating in working chamber's crucible, the polycrystal material partly melts after being heated, and melt, which is heated, to be flowed into auxiliary and feed intake working chamber
Feed opening, since feed opening is cold-zone in itself, and auxiliary feeds intake melting feed opening induction coil and auxiliary feeds intake melting blanking
Mouth heater is not powered on, while aids in the melt that the feed opening electromagnetic confinement inductor of working chamber lower part works to feed opening that feeds intake
Apply upward power so that melt is set in feed opening, and feed opening is closed；
Crystal growth phase：After the melt during auxiliary feeds intake working chamber's crucible is uniform, closes and aid in the working chamber lower part that feeds intake
Feed opening electromagnetic confinement inductor, opens feed opening electromagnetic induction coil and auxiliary and feeds intake melting feed opening heater, to blanking
Mouth heating so that the polycrystal material melted by heat of solidification in feed opening, and flowed down from feed opening, instill in main working chamber's crucible, directly
To the stable state for reaching electromagnetic confinement melt；Start what is sensed according to the weight sensor of main working chamber's crucible bottom after stable state
Numerical value, controls the driving device to drive the main electromagnetic confinement inductor to move up so that crystalline silicon constantly starts fixed upwards
To growth, quasi-crystalline substance silicon is formed；Adjustment melt pushes electromagnetic confinement inductor and applies stressed size, controls the melt flow of feed opening
Amount, while adjust the rate of climb of main electromagnetic confinement inductor so that the silicon melt weight flowed down is equal in main working chamber's crucible
The weight of silicon crystallization；
Feed phase：When the melt that feeds intake in working chamber's crucible of auxiliary will be used up, cut-out auxiliary feeds intake the auxiliary of working chamber
Feed intake melting feed opening induction coil, auxiliary of working chamber's main induction coil, the auxiliary of feeding intake feeds intake working chamber's primary heater and auxiliary
The electric current for the melting feed opening heater that feeds intake is helped, while ensures that the auxiliary feeds intake and has circulation in working chamber's inner inductive coil
Water so that the melt in feed opening solidifies in time, and feed opening is closed so that main working chamber and auxiliary feed intake working chamber's atmosphere every
From；At the same time when under no melt droplets, stop mobile main electromagnetic confinement inductor；Then aid in feeding intake in working chamber second is opened
Valve, makes auxiliary feed intake the indoor air pressure of melting to atmospheric pressure, opens auxiliary afterwards and feeds intake working chamber, while by new polycrystal material
It is quick to be put into auxiliary and feed intake in working chamber's crucible, close auxiliary and feed intake working chamber, be evacuated to initial default；Auxiliary is closed to throw
Expect the feed opening electromagnetic confinement inductor of working chamber lower part, open auxiliary and feed intake the indoor electromagnetic induction coil of melting and heating
Device, after auxiliary feed intake the indoor Melt molten of melting it is uniform after, close auxiliary and feed intake the feed opening electromagnetic confinement of working chamber lower part
Inductor, opens feed intake working chamber melt of auxiliary and pushes electromagnetic confinement inductor.Open feed opening electromagnetic induction coil and auxiliary
Feed intake melting feed opening heater, gives feed opening heating so that the polycrystal material melted by heat of solidification in feed opening, and from feed opening
Flow down, instill in main working chamber's crucible, until reaching the stable state of electromagnetic confinement melt；Start after stable state according to main working chamber
The numerical value of the weight sensor sensing of crucible bottom, controls the driving device to drive the main electromagnetic confinement inductor to move up,
So that crystalline silicon constantly starts upwardly-directed growth, required monocrystalline silicon, quasi-crystalline substance silicon and polysilicon are formed；
Continuous growth phase：Repeat feed phase technique, you can realize the continuous growth of silicon crystal.
Further technical solution is：At the stock stage, 10 are evacuated to-3Pa, and it is filled with the nitrogen of 0.5MPa
Gas or argon gas are as protection gas.
Further technical solution is：In the feed phase, the pressure of the first pressure gauge of main working chamber is checked
Value, if pressure when declining needs that gas is replenished in time, while is quickly put into auxiliary by new polycrystal material and feeds intake in working chamber's crucible,
Auxiliary is closed to feed intake working chamber.
Further technical solution is：In the feed phase, progress vacuum pumping, by the gas transport of extraction
The analysis of gas componant is carried out to nitrogen oxygen analyzer, aids in feeding intake before judging feed phase using the analysis result of nitrogen oxygen analyzer
Whether the feed opening of working chamber is sealed；In the feed phase, if the pressure value of first pressure gauge declines, after progress
During continuous vacuum pumping, just stop when pressure value all initial defaults that first pressure gauge and second pressure gauge are shown
Vacuum pumping.
Further technical solution is：Obtain whether the melt that auxiliary feeds intake in working chamber's crucible is used by the following method
To the greatest extent：During the stock stage, auxiliary is obtained respectively and is fed intake in working chamber's crucible monocrystalline in the weight of polycrystal material and main working chamber's crucible
The weight of material, with the progress of melt stage and crystal growth phase, what the weight sensor on the downside of main working chamber's crucible sensed
Value will increase, when the weight gain of main working chamber's crucible feeds intake 5/6ths of polycrystal material weight in working chamber's crucible for auxiliary
During to 6/7ths, judge that the melt that auxiliary feeds intake in working chamber's crucible will be used up, need to carry out feed supplement at this time.
It is using beneficial effect caused by above-mentioned technical proposal：The device used in the method has double melting zones,
One melting zone can be used for crystal growth, and a melting zone can be used as continuous dosing area.Continuous dosing area：Sensing equipped with twoth area
Magnetic field is heated, for being heated to polycrystal material.Induction coil in crucible feed opening after the material of upper smelting system is used up powers off
Have the function that to force cooling afterwards so that polycrystal material solidification sealing feed opening, then opens upper melt zone, feed intake, close furnace body, close
Envelope, vacuumizes, and energization melting, feed opening melts out, and opens the electromagnetic pressure device of top, presses to melt so that melt continues to drip
To crystal growth system.Two groups of electromagnetic confinement magnetic fields, control the up and down motion of melt.Crystal growth area has electromagnetic confinement magnetic
So that melt oriented growth under conditions of no side wall crucible.Since silicon is non-conductive, it is molten to melt part first with lower heater
Body, opens electromagnetic confinement device, can repeatedly be fed intake by material charging region to crystal growth area, realizes the continuous growth of crystal.
Brief description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structure diagram of the grower at the stage of stock of growing method described in the embodiment of the present invention；
Fig. 2 is the structure diagram of the grower at the melt stage of growing method described in the embodiment of the present invention；
Fig. 3 is the structure diagram of the grower in crystal growth phase of growing method described in the embodiment of the present invention；
Fig. 4 is the structure diagram of the grower in feed phase of growing method described in the embodiment of the present invention；
Fig. 5 is the structure diagram of the grower in continuous growth phase of growing method described in the embodiment of the present invention；
Wherein：1st, second pressure gauge；2nd, bell；3rd, first pressure gauge；4th, the working chamber that feeds intake is aided in；5th, main working chamber；6th, first
Valve body；7th, main electromagnetic confinement inductor；8th, main molten refining chamber heater；9th, main working chamber's crucible；10th, crucible water-cooling system；11st, it is brilliant
Body；12nd, melt；13rd, feed opening electromagnetic confinement inductor；14th, the melting feed opening induction coil that feeds intake is aided in；15th, auxiliary feeds intake
Melting feed opening heater；16th, the working chamber's primary heater that feeds intake is aided in；17th, the working chamber's main induction coil that feeds intake is aided in；18th, it is auxiliary
Help the working chamber's crucible that feeds intake；20th, the second valve body；21st, electromagnetic confinement inductor is pushed；22nd, polycrystal material；23rd, monocrystalline material.
Embodiment
With reference to the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only the part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
Implemented using other different from other manner described here, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is from the limitation of following public specific embodiment.
As shown in figure 5, the embodiment of the invention discloses a kind of continuous growing device of silicon crystal, including main working chamber 5, institute
The upside of Shu Zhu working chambers 5 feeds intake working chamber 4 equipped with auxiliary, the auxiliary feed intake the positive downside in working chamber 4 main working chamber 5 in set
It is equipped with main working chamber's crucible 9.The downside of main working chamber's crucible 9 is provided with crucible water-cooling system 10, main working chamber's earthenware
The periphery of crucible 9 is provided with main molten refining chamber heater 8, and the upside circumference of the main molten refining chamber heater 8 is provided with main electromagnetic confinement
Inductor 7, the bath surface that the main constraint inductor 7 is used in Shi Zhu working chambers crucible 9 raise up.The main working chamber
Driving device is provided with 5, the power output end of the driving device is connected with the main electromagnetic confinement inductor 7, for driving
Move the main electromagnetic confinement inductor 7 to move up and down, the downside of main working chamber's crucible 9 is provided with weight sensor, is used for
Sense the gross weight of main working chamber's crucible 9.With the increase of weight sensor sensing weight, controller passes through described
Driving device drives the main electromagnetic confinement inductor 7 to rise.
The auxiliary, which feeds intake, to be provided with auxiliary in working chamber 4 and feeds intake working chamber's crucible 18, and the auxiliary feeds intake working chamber's earthenware
The bottom of crucible 18 is connected by communicating pipe with the main working chamber 5, and the auxiliary feeds intake the feed opening of working chamber's crucible 18
Positioned at the surface of main working chamber's crucible 9.The periphery of assisted melting room feed opening is provided with auxiliary in the main working chamber 5
Feed intake melting feed opening electromagnetic confinement inductor 13, and the feed opening electromagnetic confinement inductor 13 is used to produce upwards melt
Power；The feed intake periphery of communicating pipe of the downside of working chamber's crucible 18 of the auxiliary is provided with auxiliary and feeds intake melting feed opening heater
15, the feed intake periphery of melting feed opening heater 15 of the auxiliary is provided with auxiliary and feeds intake melting feed opening induction coil 14, institute
State the feed intake periphery of upside of working chamber's crucible 18 of auxiliary to be provided with auxiliary and feed intake working chamber's primary heater 16, the auxiliary feeds intake
The periphery of working chamber's primary heater 16 is provided with auxiliary and feeds intake working chamber's main induction coil 17, and the auxiliary feeds intake working chamber's crucible
Feed intake working chamber melt of auxiliary is provided with 18 upper end opening and pushes electromagnetic confinement inductor 21, it is downward for being produced to melt
Power.
Described device has double melting zones, and a melting zone can be used for crystal growth, and a melting zone can be used as continuous dosing
Area.Continuous dosing area：Sensing heating magnetic field equipped with twoth area, for being heated to polycrystal material.When the material of upper smelting system use up with
Have the function that to force cooling after the induction coil power-off of crucible feed opening afterwards so that polycrystal material solidification sealing feed opening, so
Upper melt zone is opened afterwards, is fed intake, closes furnace body, and sealing, vacuumizes, and energization melting, feed opening melts out, and opens the electromagnetic pressure of top
Device, presses to melt so that melt continues drop to crystal growth system.Two groups of electromagnetic confinement magnetic fields, control the fortune up and down of melt
It is dynamic.Crystal growth area has electromagnetic confinement magnetic field so that melt oriented growth under conditions of no side wall crucible.Since silicon is not led
Electricity, melts part melt first with lower heater, opens electromagnetic confinement device, can be repeatedly to crystal growth area by material charging region
Feed intake, realize the continuous growth of crystal.
Further, as shown in figure 5, being provided with the protective gas pipeline communicated therewith on the side wall of the main working chamber 5,
The first valve body 6 is provided with the protective gas pipeline, the first valve body 6 is used to control opening or closing for protective gas pipeline,
Protective gas is filled with into the main working chamber 5 by the protective gas pipeline, improves the purity of the crystal growth.
Further, as shown in figure 5, the top of the main working chamber 5 is provided with first pressure gauge 3, the first pressure
Table 3 is used to measure air pressure in the main working chamber 5.The auxiliary working chamber 5 that feeds intake is carried out by the auxiliary working chamber's bell 2 that feeds intake
Sealing, the auxiliary working chamber's bell 2 that feeds intake can open or close as needed.Be provided with the bell 2 with it is described auxiliary
The exhaust tube and second pressure gauge 1 that the working chamber 5 that feeds intake is connected are helped, the second valve body 20 is provided with the exhaust tube.
The invention also discloses a kind of silicon crystal continuous growing method, include the following steps：
The stock stage, as shown in Figure 1：Firstly, for for quasi- monocrystalline, it is necessary to according to consistent crystal orientation by multiple signle crystasl material 23 in master
Sequenced in working chamber's crucible 9 and be covered with main working chamber's crucible 9.Lastblock single crystal seed is only put for continuous crystal growth.So
Polycrystal material is placed into auxiliary afterwards to feed intake in working chamber's crucible 18, by furnace sealing, is evacuated to preset value, and be filled with preset value
Inert gas, open crucible water-cooling system 10 so that the bottom of main working chamber's crucible 9 obtains water-cooled effect；Open main molten refining
Chamber heater 8 is to the multiple signle crystasl material heating in main working chamber's crucible 9, until the multiple signle crystasl material top half in crucible melts
Change, be then turned on main electromagnetic confinement inductor 7 so that the melt of fusing is subject to the pact of electromagnetic force in main working chamber's crucible 9
Beam, raises up；
The melt stage, as shown in Figure 2：After Melt Stability in main working chamber's crucible 9, open and aid in 4 lower part of working chamber that feeds intake
Feed opening electromagnetic confinement inductor 13, and open auxiliary feed intake working chamber's main induction coil 17 and auxiliary feed intake working chamber it is main plus
Hot device 16, is heated, part is melted after the polycrystal material 22 is heated, melt to auxiliary 18 polycrystal material 22 in working chamber's crucible that feeds intake
The heated auxiliary that flows into feeds intake working chamber's feed opening, and since feed opening is cold-zone in itself, and auxiliary feeds intake the melting feed opening line of induction
Circle 14 and the auxiliary melting feed opening heater 15 that feeds intake are not powered on, while auxiliary feeds intake the feed opening electromagnetism of 4 lower part of working chamber
Constraint inductor 13 works applies upward power to the melt of feed opening so that melt is set in feed opening, and feed opening is sealed
Close；
Crystal growth phase, as shown in Figure 3：After the melt during auxiliary feeds intake working chamber's crucible 18 is uniform, closes auxiliary and feed intake
The feed opening electromagnetic confinement inductor 13 of 4 lower part of working chamber, opens feed opening electromagnetic induction coil 14 and auxiliary feeds intake under melting
Material mouth heater 15, is heated to feed opening so that the polycrystal material melted by heat of solidification in feed opening, and flowed down from feed opening, drip
Become owner of in working chamber's crucible 9, until reaching the stable state of electromagnetic confinement melt；Start after stable state according to main working chamber's crucible 9
The numerical value of the weight sensor sensing of bottom, controls the driving device to drive the main electromagnetic confinement inductor 7 to move up so that
Crystalline silicon constantly starts upwardly-directed growth, forms quasi-crystalline substance silicon；Adjust melt and push the application pressure of electromagnetic confinement inductor 21
Size, control the melt flow of feed opening, while adjust the rate of climb of main electromagnetic confinement inductor 7 so that the silicon flowed down
Melt weight is equal to the weight of silicon crystallization in main working chamber's crucible 9；
Feed phase, as shown in Figure 4：When the melt that auxiliary feeds intake in working chamber's crucible 18 will be used up, cut-out auxiliary feeds intake
The auxiliary of working chamber 5 feed intake melting feed opening induction coil 14, the auxiliary of working chamber's main induction coil 17, auxiliary that feed intake feeds intake melting
Room primary heater 16 and auxiliary feed intake the electric current of melting feed opening heater 15, while ensure that the auxiliary feeds intake working chamber 4
There is recirculated water in inner inductive coil so that the melt in feed opening solidifies in time, and feed opening is closed so that main working chamber 5
Feed intake 4 gas isolating of working chamber with auxiliary；At the same time when under no melt droplets, stop mobile main electromagnetic confinement inductor 7；Then beat
The second valve 20 that auxiliary feeds intake in working chamber 4 is opened, the air pressure that auxiliary feeds intake in working chamber 4 is opened afterwards auxiliary to atmospheric pressure
The working chamber that feeds intake is helped, while new polycrystal material is quickly put into auxiliary and is fed intake in working chamber's crucible 18, auxiliary is closed and feeds intake melting
Room, is evacuated to initial default；Close auxiliary to feed intake the feed opening electromagnetic confinement inductor 13 of 4 lower part of working chamber, open auxiliary
The indoor electromagnetic induction coil of the melting that feeds intake and heater are helped, after the Melt molten that auxiliary feeds intake in working chamber 4 is uniform, is closed
Auxiliary feeds intake the feed opening electromagnetic confinement inductor 13 of 4 lower part of working chamber, opens the auxiliary working chamber's melt that feeds intake and pushes electromagnetism about
Beam inductor 21.Open feed opening electromagnetic induction coil 14 and auxiliary feed intake melting feed opening heater 15, give feed opening heating,
So that the polycrystal material melted by heat solidified in feed opening, and flowed down from feed opening, instill in main working chamber's crucible, until reaching electricity
The stable state of magnetic confinement melt；Instill in main working chamber's crucible, until reaching the stable state of electromagnetic confinement melt；Opened after stable state
Begin the numerical value sensed according to the weight sensor of main 9 bottom of working chamber's crucible, controls the driving device to drive the main electromagnetism
Constraint inductor 7 move up so that crystalline silicon constantly starts upwardly-directed growth, formed required monocrystalline silicon, quasi-crystalline substance silicon or
Polysilicon；
Continuous growth phase：Repeat feed phase technique, you can realize the continuous growth of silicon crystal.
Preferably, at the stock stage, 10 are evacuated to-3Pa, and it is filled with nitrogen or the argon gas conduct of 0.5MPa
Gas is protected, it is necessary to which explanation, the vacuum of described device and the specific component of protection gas can be carried out according to being actually needed
Set.
Further, in the feed phase, the pressure value of the first pressure gauge 3 of main working chamber 5 is checked, if under pressure
Needed during drop timely by protective gas pipeline make-up gas, while new polycrystal material is quickly put into auxiliary and is fed intake working chamber
In crucible 18, close auxiliary and feed intake working chamber, can effectively prevent air and enter in main working chamber 5, improve crystal life
Long purity.
Further, in the feed phase, progress vacuum pumping, by the gas transport of extraction to nitrogen oxygen analyzer
The analysis of gas componant is carried out, the blanking for the working chamber that judges to aid in before feed phase to feed intake using the analysis result of nitrogen oxygen analyzer
Whether mouth is sealed；In the feed phase, if the pressure value of first pressure gauge 3 declines, follow-up vacuumize is being carried out
During operation, just stop vacuumizing behaviour when pressure value all initial defaults that first pressure gauge 3 and second pressure gauge 1 are shown
Make, influence to crystal growth caused by the pressure of the working chamber 4 that can effectively prevent from feeding intake with auxiliary because of main working chamber 5 is inconsistent.
Further, obtain whether the melt that auxiliary feeds intake in working chamber's crucible 18 is used up by the following method：Stock rank
Duan Shi, obtains auxiliary and feeds intake the weight of monocrystalline material in the weight of polycrystal material in working chamber's crucible 18 and main working chamber's crucible 9 respectively
Amount, with the progress of melt stage and crystal growth phase, the value of the weight sensor sensing of the main downside of working chamber's crucible 9 will increase
Greatly, when main working chamber's crucible 9 weight gain for auxiliary feed intake polycrystal material weight in working chamber's crucible 18 5/6ths to
When 6/7ths, judge that the melt that auxiliary feeds intake in working chamber's crucible 18 will be used up, need to carry out feed supplement at this time.
Claims (5)
1. a kind of continuous growing method of silicon crystal, it is characterised in that include the following steps：
The stock stage：Firstly, for for quasi- monocrystalline, it is necessary to according to consistent crystal orientation by multiple signle crystasl material（23）In main working chamber's earthenware
Crucible（9）Inside sequence and be covered with main working chamber's crucible（9）, lastblock single crystal seed is only put for continuous crystal growth；Then will
Polycrystal material（22）Auxiliary is placed into feed intake working chamber's crucible（18）In, by furnace sealing, preset value is evacuated to, and be filled with default
The inert gas of value, opens crucible water-cooling system（10）So that main working chamber's crucible（9）Bottom obtain water-cooled effect；Open
Main molten refines chamber heater（8）To main working chamber's crucible（8）Interior multiple signle crystasl material heating, up on the multiple signle crystasl material in crucible
Half part melts, and is then turned on main electromagnetic confinement inductor（7）So that main working chamber's crucible（9）The melt of interior fusing by
To the constraint of electromagnetic force, raise up；
The melt stage：Main working chamber's crucible（9）After interior Melt Stability, open auxiliary and feed intake working chamber（4）The feed opening of lower part
Electromagnetic confinement inductor（13）, and open auxiliary and feed intake working chamber's main induction coil（17）And aid in the main heating in working chamber that feeds intake
Device（16）, feed intake to auxiliary in working chamber's crucible（18）Polycrystal material（22）Heating, the polycrystal material（22）Part is molten after heated
Change, melt, which is heated, to be flowed into auxiliary and feed intake working chamber's feed opening, and since feed opening is cold-zone in itself, and auxiliary feeds intake melting feed opening
Induction coil（14）And aid in the melting feed opening heater that feeds intake（15）It is not powered on, while aids in the working chamber that feeds intake（4）Lower part
Feed opening electromagnetic confinement inductor（13）Work and upward power is applied to the melt of feed opening so that melt is set in feed opening
It is interior, feed opening is closed；
Crystal growth phase：Treat that auxiliary feeds intake working chamber's crucible（18）In melt it is uniform after, close auxiliary and feed intake working chamber（4）
The feed opening electromagnetic confinement inductor of lower part（13）, open feed opening electromagnetic induction coil（14）Feed intake melting feed opening with auxiliary
Heater（14）, heated to feed opening so that and the polycrystal material melted by heat of solidification in feed opening, and flowed down from feed opening, instill
Main working chamber's crucible（9）In, until reaching the stable state of electromagnetic confinement melt；Start after stable state according to main working chamber's crucible
（9）The numerical value of the weight sensor sensing of bottom, controls the driving device to drive the main electromagnetic confinement inductor（7）On
Move so that crystalline silicon constantly starts upwardly-directed growth, forms quasi-crystalline substance silicon；Adjust melt and push electromagnetic confinement inductor（21）
Stressed size is applied, controls the melt flow of feed opening, while adjusts main electromagnetic confinement inductor（7）The rate of climb, make
The silicon melt weight that must be flowed down is equal to main working chamber's crucible（9）The weight of interior silicon crystallization；
Feed phase：Treat that auxiliary feeds intake working chamber's crucible（18）When interior melt will be used up, cut-out auxiliary feeds intake working chamber（5）
Auxiliary feed intake working chamber's main induction coil（17）, auxiliary feeds intake melting feed opening induction coil（14）, auxiliary feeds intake working chamber
Primary heater（16）And aid in the melting feed opening heater that feeds intake（15）Electric current, while ensure that the auxiliary feeds intake working chamber
（4）There is recirculated water in inner inductive coil so that the melt in feed opening solidifies in time, and feed opening is closed so that main molten is refined
Room（5）Feed intake working chamber with auxiliary（4）Gas isolating；At the same time when under no melt droplets, stop mobile main electromagnetic confinement inductor
（7）；Then auxiliary is opened to feed intake working chamber（4）On the second valve（20）, auxiliary is fed intake working chamber（4）Interior air pressure is to big
Air pressure, opens auxiliary and feeds intake working chamber afterwards, while new polycrystal material is quickly put into auxiliary and is fed intake working chamber's crucible（18）It is interior,
Close auxiliary to feed intake working chamber, be evacuated to initial default；Auxiliary is closed to feed intake working chamber（4）The feed opening electromagnetism of lower part is about
Beam inductor（13）, open auxiliary and feed intake in working chamber（4）Electromagnetic induction coil and heater, feed intake working chamber's earthenware to auxiliary
Crucible（18）Interior polycrystal material heating；Treat that auxiliary feeds intake working chamber（4）After interior Melt molten is uniform, closes auxiliary and feed intake working chamber
（4）The feed opening electromagnetic confinement inductor of lower part（13）, open feed intake working chamber melt of auxiliary and push electromagnetic confinement inductor
（21）；Open feed opening electromagnetic induction coil（14）Feed intake melting feed opening heater with auxiliary（15）, heat, make to feed opening
The polycrystal material melted by heat of solidification in feed opening is obtained, and is flowed down from feed opening, instills main working chamber's crucible（9）In, until reaching
The stable state of electromagnetic confinement melt；Start after stable state according to main working chamber's crucible（9）The number of the weight sensor sensing of bottom
Value, controls the driving device to drive the main electromagnetic confinement inductor（7）Move up so that crystalline silicon constantly starts fixed upwards
To growth, required monocrystalline silicon, quasi-crystalline substance silicon or polysilicon are formed；
Continuous growth phase：Repeat feed phase technique, you can realize the continuous growth of silicon crystal.
2. the continuous growing method of silicon crystal as claimed in claim 1, it is characterised in that：At the stock stage, take out true
It is empty to 10-3Pa, and it is filled with the nitrogen or argon gas conduct protection gas of 0.5MPa.
3. silicon crystal continuous growing method as claimed in claim 1, it is characterised in that：In the feed phase, master is checked
Working chamber（5）First pressure gauge（3）Pressure value, while quickly will be new if pressure when declining needs that gas is replenished in time
Polycrystal material is put into auxiliary and feeds intake working chamber's crucible（18）It is interior, close auxiliary and feed intake working chamber.
4. silicon crystal continuous growing method as claimed in claim 1, it is characterised in that：In the feed phase, take out true
During do-nothing operation, the gas transport of extraction to nitrogen oxygen analyzer is carried out to the analysis of gas componant, utilizes the analysis of nitrogen oxygen analyzer
As a result judge whether the feed intake feed opening of working chamber of auxiliary before feed phase is sealed；In the feed phase, if first
Pressure gauge（3）Pressure value decline, when carrying out follow-up vacuum pumping, until first pressure gauge（3）And second pressure
Table（1）The pressure value of display all initial default when just stop vacuum pumping.
5. silicon crystal continuous growing method as claimed in claim 1, it is characterised in that obtain auxiliary by the following method and feed intake
Working chamber's crucible（18）Whether interior melt is used up：During the stock stage, auxiliary is obtained respectively and is fed intake working chamber's crucible（18）It is interior more
The weight of crystalline substance material and main working chamber's crucible（9）The weight of interior monocrystalline material, with the progress of melt stage and crystal growth phase,
Main working chamber's crucible（9）The value of the weight sensor sensing of downside will increase, when main working chamber's crucible（9）Weight gain be
Aid in the working chamber's crucible that feeds intake（18）Interior polycrystal material weight 6/5ths to seven/6ths when, judge that auxiliary feeds intake working chamber's earthenware
Crucible（18）Interior melt will be used up, and need to carry out feed supplement at this time.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531863A (en) * | 2018-05-09 | 2018-09-14 | 深圳市华星光电技术有限公司 | Feed supplementing device and evaporated device |
| CN112410883A (en) * | 2020-11-16 | 2021-02-26 | 宇泽半导体(云南)有限公司 | Improved indium phosphide crystal synthesis and growth process and device |
| CN113668047A (en) * | 2021-08-09 | 2021-11-19 | 长沙新立硅材料科技有限公司 | Device for pulling monocrystalline silicon in double-frequency induction furnace |
| CN115558984A (en) * | 2022-09-21 | 2023-01-03 | 中国电子科技集团公司第十三研究所 | Method for preparing large-size semiconductor crystal without crucible |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
| CN101829767A (en) * | 2010-05-26 | 2010-09-15 | 丽达科技有限公司 | Silicon electromagnetic casting device |
| CN102471924A (en) * | 2009-07-20 | 2012-05-23 | 皮拉股份公司 | Apparatus for producing multicrystalline silicon ingots by induction method |
| CN102947025A (en) * | 2010-04-13 | 2013-02-27 | 施米德硅晶片科技有限责任公司 | Production of monocrystalline semiconductor materials |
| US20130186144A1 (en) * | 2010-09-03 | 2013-07-25 | Shinichi Miyamoto | Electromagnetic casting method of silicon ingot |
| CN104372407A (en) * | 2014-11-19 | 2015-02-25 | 李剑 | Equipment and method for directional solidification growth of crystalline silicon |
| CN204237890U (en) * | 2014-11-19 | 2015-04-01 | 李剑 | A kind of crystalline silicon directional solidification growth equipment |
-
2017
- 2017-12-17 CN CN201711358345.4A patent/CN107964681B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
| CN102471924A (en) * | 2009-07-20 | 2012-05-23 | 皮拉股份公司 | Apparatus for producing multicrystalline silicon ingots by induction method |
| CN102947025A (en) * | 2010-04-13 | 2013-02-27 | 施米德硅晶片科技有限责任公司 | Production of monocrystalline semiconductor materials |
| CN101829767A (en) * | 2010-05-26 | 2010-09-15 | 丽达科技有限公司 | Silicon electromagnetic casting device |
| US20130186144A1 (en) * | 2010-09-03 | 2013-07-25 | Shinichi Miyamoto | Electromagnetic casting method of silicon ingot |
| CN104372407A (en) * | 2014-11-19 | 2015-02-25 | 李剑 | Equipment and method for directional solidification growth of crystalline silicon |
| CN204237890U (en) * | 2014-11-19 | 2015-04-01 | 李剑 | A kind of crystalline silicon directional solidification growth equipment |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108531863A (en) * | 2018-05-09 | 2018-09-14 | 深圳市华星光电技术有限公司 | Feed supplementing device and evaporated device |
| CN108531863B (en) * | 2018-05-09 | 2020-03-27 | 深圳市华星光电技术有限公司 | Feed supplement device and evaporation equipment |
| CN112410883A (en) * | 2020-11-16 | 2021-02-26 | 宇泽半导体(云南)有限公司 | Improved indium phosphide crystal synthesis and growth process and device |
| CN113668047A (en) * | 2021-08-09 | 2021-11-19 | 长沙新立硅材料科技有限公司 | Device for pulling monocrystalline silicon in double-frequency induction furnace |
| CN115558984A (en) * | 2022-09-21 | 2023-01-03 | 中国电子科技集团公司第十三研究所 | Method for preparing large-size semiconductor crystal without crucible |
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