CN110212039A - The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell - Google Patents
The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell Download PDFInfo
- Publication number
- CN110212039A CN110212039A CN201910466066.2A CN201910466066A CN110212039A CN 110212039 A CN110212039 A CN 110212039A CN 201910466066 A CN201910466066 A CN 201910466066A CN 110212039 A CN110212039 A CN 110212039A
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- China
- Prior art keywords
- tinsel
- gate line
- line electrode
- photovoltaic cell
- thin gate
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Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 210000004027 cell Anatomy 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 9
- 239000007772 electrode material Substances 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 230000004927 fusion Effects 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003672 processing method Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of methods that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell, and tinsel is used to substitute traditional method for printing screen as the thin gate line electrode material of photovoltaic cell.Tinsel is attached to photovoltaic cell surface first, then both ends is carried out with silver paste etc. and fixes.Then laser scanning tinsel is used, so that it is melted and is sintered, forms thin gate line electrode on cell piece surface.Using the thin gate line electrode of photovoltaic cell prepared by the present invention, material category range is wide, can be silver, copper, aluminium etc.；The width of gate line electrode is smaller；The material compactness of gate line electrode is good, and after laser sintered and fusion and the bond strength of battery surface is high.
Description
Technical field
The invention belongs to solar-energy photo-voltaic cell piece fields, particularly relate to a kind of laser sintered tinsel preparation
The method of the thin gate line electrode of photovoltaic cell.
Background technique
Gate line electrode is most important structure and material in current photovoltaic cell, and major function is the electricity of collection photovoltaics conversion
Stream.Common front gate line electrode includes that main gate line, secondary grid line and thin grid line, width are sequentially reduced.Current gate line electrode is most main
The processing method of stream is silk-screen printing.It is promoted to improve the energy conversion efficiency of photovoltaic cell, reduces processing cost, need
Screen printing technique is improved.It mainly include at present reducing the width and thickness of thin grid line, to reduce gate line electrode
Shading-area and silver paste materials.For thin grid line, width has already decreased to 50 microns hereinafter, this proposes silk screen factor technology
Challenge.
Wire prepares the trend that photovoltaic electrode gate line electrode is future.A kind of patent " front of solar battery
In electrode structure " (application number 201620380954.4), with wire printer, the basis of silver grating line is brushed in screen printing
On, then metal electrode is printed, wire and silver grating line are connected by tin cream.Wire is using materials such as copper, and cost is greatly
It reduces.But this method, there are no screen printing technique is abandoned completely, only part uses wire technology, in addition, metal
Only being welded by tin cream in individual places between silk and cell piece, connect with silk-screen printing silver grating line.Thus while save
A part of electrode material, but collected current ability is to be improved.
Summary of the invention
In order to overcome drawbacks described above, the present invention provides a kind of laser sintered tinsels to prepare the thin grid line of photovoltaic cell
The method of electrode is sintered the metal powder grain for being dispersed in photovoltaic cell surface, directly forms the gate electrode of battery.Together
When, thinner tinsel is selected, gate line electrode shading-area and metal electrode materials can also be preferably reduced.
The present invention is to solve technical solution used by its technical problem:
A kind of method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell, comprising the following steps:
Step 1, prepare tinsel, and do tinsel in a row with fixture, the spacing between tinsel with wait make
The spacing for the thin grid line made is consistent；
Step 2, above-mentioned row tinsel is attached to the surface of photovoltaic cell, and the both ends of tinsel are fixed on light
It lies prostrate on cell piece, then cuts off the both ends of tinsel, form laterally thin grid line；
Step 3, it is scanned on the tinsel with laser beam, melts tinsel and sintering, obtain lateral thin
Gate line electrode；
Step 4, repeat the above steps 1-3, obtains longitudinal thin gate line electrode.
As a further improvement of the present invention, the tinsel in the step 1 be filamentary silver line, aluminium wire line, copper wire line and
One of Herba Anoectochili roxburghii.
As a further improvement of the present invention, the diameter of the tinsel in the step 1 is between 10~50 microns.
As a further improvement of the present invention, in the step 2, the tinsel both ends are fixed by silver paste.
As a further improvement of the present invention, in the step 3, the wavelength of the laser beam is 700~1000 nanometers, and
Using picosecond pulse.
The beneficial effects of the present invention are: the laser sintered tinsel prepares the method electricity of the thin gate line electrode of photovoltaic cell
Pole is good with battery binding force, is the processing method of pure physics；Gate line electrode width can be thinner, is lower than 50 microns, is conducive to subtract
The shading-area of few gate line electrode, and save electrode material materials；The present invention prepares the thin grid line of photovoltaic cell with tinsel
Electrode, material category range is wide, can be silver, copper, aluminium etc.；The width of gate line electrode is controllable；The material compactness of gate line electrode
Good, after laser sintered and fusion and the bond strength of battery surface is high.
Detailed description of the invention
Fig. 1 is method schematic diagram of the invention；
In conjunction with attached drawing, make the following instructions:
1 --- scanning laser beam；2 --- tinsel；
3 --- photovoltaic cell.
Specific embodiment
Below in conjunction with attached drawing, elaborate to a preferred embodiment of the invention.But protection scope of the present invention is not
Be limited to following embodiments, i.e., in every case with simple equivalence changes made by scope of the present invention patent and description with repair
Decorations, all still belong within the invention patent covering scope.
It refering to fig. 1, is that a kind of laser sintered tinsel of the present invention prepares the thin gate line electrode of photovoltaic cell
Method, comprising the following steps:
Step 1, prepare specific tinsel, such as the fine silver silk of 30 micron diameters, and do metal in a row with fixture
Silk thread, the spacing between tinsel is according to thin grid line specification institution；
Step 2, above-mentioned row tinsel is attached to the surface of photovoltaic cell, both ends are fixed with silver paste, then cut off
The both ends of tinsel form lateral grid line on photovoltaic cell surface；
Step 3, it is scanned on tinsel with laser beam, the wavelength of laser beam is 700~1000 nanometers, and use picosecond
Pulse makes tinsel melt and be sintered, obtains lateral thin gate line electrode；
Step 4, repeat the above steps 1-3, obtains longitudinal thin gate line electrode.
Wherein, the tinsel in the step 1 is filamentary silver line, aluminium wire line, copper wire line or Herba Anoectochili roxburghii, but is not limited to
This.
Compared to existing silk-screen printing, the tinsel in the present invention prepares thin gate line electrode method, and electrode is in conjunction with battery
Power is good, is the processing method of pure physics.In addition, gate line electrode width can be thinner, it is lower than 50 microns.Therefore, it advantageously reduces
The shading-area of gate line electrode, and save electrode material materials.
Claims (5)
1. a kind of method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell, which is characterized in that including following
Step:
Step 1, prepare tinsel, and do tinsel in a row with fixture, the spacing between tinsel and to be produced
The spacing of thin grid line is consistent；
Step 2, above-mentioned row tinsel is attached to the surface of photovoltaic cell, and the both ends of tinsel are fixed on photovoltaic electric
Then pond on piece cuts off the both ends of tinsel, form laterally thin grid line；
Step 3, it is scanned on above-mentioned tinsel with laser beam, so that tinsel is melted and is sintered, obtain lateral thin grid line
Electrode；
Step 4, repeat the above steps 1-3, obtains longitudinal thin gate line electrode.
2. the method that laser sintered tinsel according to claim 1 prepares the thin gate line electrode of photovoltaic cell, special
Sign is: the tinsel in the step 1 is one of filamentary silver line, aluminium wire line, copper wire line and Herba Anoectochili roxburghii.
3. the method that laser sintered tinsel according to claim 1 prepares the thin gate line electrode of photovoltaic cell, special
Sign is: the diameter of the tinsel in the step 1 is between 10~50 microns.
4. the method that laser sintered tinsel according to claim 1 prepares the thin gate line electrode of photovoltaic cell, special
Sign is: in the step 2, the tinsel both ends are fixed by silver paste.
5. the method that laser sintered tinsel according to claim 1 prepares the thin gate line electrode of photovoltaic cell, special
Sign is: in the step 3, the wavelength of the laser beam is 700~1000 nanometers, and uses picosecond pulse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910466066.2A CN110212039A (en) | 2019-05-30 | 2019-05-30 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910466066.2A CN110212039A (en) | 2019-05-30 | 2019-05-30 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110212039A true CN110212039A (en) | 2019-09-06 |
Family
ID=67789658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910466066.2A Pending CN110212039A (en) | 2019-05-30 | 2019-05-30 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
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| Country | Link |
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| CN (1) | CN110212039A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276615A (en) * | 2020-05-08 | 2020-06-12 | 浙江爱旭太阳能科技有限公司 | Large-area perovskite solar cell and preparation method |
| CN117410387A (en) * | 2023-12-15 | 2024-01-16 | 晶澜光电科技(江苏)有限公司 | Thin grid structure of crystalline silicon solar cell and preparation method thereof |
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|---|---|---|---|---|
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| CN102956723A (en) * | 2011-08-21 | 2013-03-06 | 比亚迪股份有限公司 | Solar cell and preparation method thereof |
| CN103918089A (en) * | 2011-09-07 | 2014-07-09 | E.I.内穆尔杜邦公司 | Process for the production of LFC-PERC silicon solar cells |
| CN106409930A (en) * | 2016-11-04 | 2017-02-15 | 上海纳晶科技有限公司 | Fine metal wire solar cell grid and preparation method thereof |
| CN106409953A (en) * | 2016-11-04 | 2017-02-15 | 上海纳晶科技有限公司 | Solar cell film-coated copper wire gate current collector structure and preparation method thereof |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
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2019
- 2019-05-30 CN CN201910466066.2A patent/CN110212039A/en active Pending
Patent Citations (9)
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|---|---|---|---|---|
| US4383164A (en) * | 1978-12-16 | 1983-05-10 | Futaba Denshi Kogyo K.K. | Method of manufacturing a control grid for fluorescent display tube |
| US20040097062A1 (en) * | 2000-09-19 | 2004-05-20 | Ralf Preu | Method of producing a semiconductor-metal contact through a dielectric layer |
| CN102428573A (en) * | 2009-05-20 | 2012-04-25 | 纳克公司 | Back Contact Solar Cells With Effective And Efficient Design And Corresponding Patterning Processes |
| CN102956723A (en) * | 2011-08-21 | 2013-03-06 | 比亚迪股份有限公司 | Solar cell and preparation method thereof |
| CN103918089A (en) * | 2011-09-07 | 2014-07-09 | E.I.内穆尔杜邦公司 | Process for the production of LFC-PERC silicon solar cells |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276615A (en) * | 2020-05-08 | 2020-06-12 | 浙江爱旭太阳能科技有限公司 | Large-area perovskite solar cell and preparation method |
| CN117410387A (en) * | 2023-12-15 | 2024-01-16 | 晶澜光电科技(江苏)有限公司 | Thin grid structure of crystalline silicon solar cell and preparation method thereof |
| CN117410387B (en) * | 2023-12-15 | 2024-02-09 | 晶澜光电科技(江苏)有限公司 | Thin grid structure of crystalline silicon solar cell and preparation method thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190906 |
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