CN107887469A - A kind of selenizing molybdenum/silicon heterogenous solar cell and preparation method thereof - Google Patents
A kind of selenizing molybdenum/silicon heterogenous solar cell and preparation method thereof Download PDFInfo
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 87
- 239000011733 molybdenum Substances 0.000 title claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000003708 ampul Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 229910016001 MoSe Inorganic materials 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 230000009466 transformation Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 239000007792 gaseous phase Substances 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052961 molybdenite Inorganic materials 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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Abstract
The invention discloses a kind of selenizing molybdenum/silicon heterogenous solar cell and preparation method thereof.It absorbs visible ray and near infrared light, selenizing molybdenum/silicon heterogenous for solar cell light induced electron and the core collector unit in hole using two-dimentional selenizing molybdenum film and silicon chip as photosensitive unit.Due to two-dimentional MoSe2Direct band gap with 1.55 eV, 400~800 nm visible ray can be effectively absorbed, there is higher photoelectric transformation efficiency, the internal quantum efficiency of solar cell can be significantly improved.Meanwhile MoSe2Hetero-junctions is formed with Si materials, visible ray and near-infrared sunshine can be fully absorbed, and hetero-junctions has very strong collecting action to light induced electron, hole, so as to improve the photovoltaic effect of solar cell and conversion efficiency.MoSe provided by the invention2For/Si heterojunction solar batteries under 350 mW white lights, light energy use efficiency reaches 2.26%.
Description
Technical field
The present invention relates to a kind of solar cell, more particularly to one kind (MoSe2)/silicon (Si) heterojunction solar battery and
Its preparation method.
Background technology
Selenizing molybdenum (the MoSe of body material2) it is a kind of indirect band-gap semiconductor, in typical layer structure, similar to graphite
Peel off as graphene, body material MoSe2It is individual layer or several layers of two-dimensional material to be easy to peel off.As block MoSe2As individual layer or
Several layers of MoSe2When, its electronic band gap is changed into direct band gap (1.55 eV) (referring to text by original indirect band gap (1.71 eV)
Offer：TONGAY S, JIAN Z, ATACA C, et al.Thermally Driven Crossover from Indirect
toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2[J]. Nano
Letters, 2012,12(11):5576-5580.).Direct band-gap semicondictor material is typically imitated with higher opto-electronic conversion
Rate.Individual layer selenizing molybdenum can be used for preparing efficient opto-electronic device.In addition, individual layer selenizing molybdenum spatially loose structure and good
Rigid structure, be remarkably improved the performances such as calorifics and the mechanics of device.Therefore, MoSe2Two dimensional crystal will solar cell,
Photochemical catalyst, phototransistor, light emitting diode are (referring to document：SUNDARAM R S, ENGEL M, LOMBARDO A, et
al. Electroluminescence In Single Layer MoS2[J]. Nano Letters,2013, 13(4):
1416-1421.) and optical modulator (referring to document：TONGAY S, ZHOU J, ATACA C, et al. Broad-range
modulation of light emission in two-dimensional semiconductors by molecular
physisorption gating. Nano Letters, 2013, 13(6):2831-2836.) etc. field all have it is vast
Application prospect.
The preparation method of individual layer selenizing molybdenum can be divided into two types：Chemical method and physical method.Physical method is main
It is to carry out successively mechanical stripping to block selenizing Mo to obtain individual layer selenizing molybdenum, this method can only obtain least a portion of selenizing
Molybdenum small pieces, it is impossible to mass produce.Chemical method is prepared by small molecule synthesis or solution separation method, including outside molecular beam
Prolong method and ion insertion method etc..In a word, the method for these preparation selenizing molybdenum films is all more complicated, and technical process is difficult control.
Relatively, the selenizing molybdenum film that prepared by chemical vapour deposition technique has good characteristic electron, is adapted to using transistor, solar energy
The opto-electronic devices such as battery.
The content of the invention
The present invention prepares two-dimentional MoSe for prior art2Existing deficiency, there is provided a kind of method is simple and easy, multiplicity
Height, cost is low, easily promotes the MoSe with industrialization2Film and high efficiency MoSe2/ silicon (Si) heterojunction solar battery and its
Preparation method.
Realize that the technical scheme of the object of the invention is to provide a kind of selenizing molybdenum/silicon heterogenous solar cell, it is with two dimension
Selenizing molybdenum film and silicon chip are photosensitive unit, absorb visible ray and near infrared light, and selenizing molybdenum/silicon heterogenous is solar cell light
Raw electronics and the core collector unit in hole.
Technical solution of the present invention also includes a kind of preparation method of selenizing molybdenum/silicon heterogenous solar cell, and step is as follows：
1. substrate cleans：Using n-type (100) silicon chip as substrate, the silica on Si surfaces is removed with dilute HF acid soaks, then is used successively
Acetone, ethanol, the cleaning of deionized water ultrasonic wave, remove the organic matter on silicon chip；Reheated after being dried up with nitrogen and remove silicon chip table
The steam in face；
2. prepared by selenizing molybdenum film：Selenizing molybdenum block is put into quartz ampoule, quartz ampoule temperature is increased to 650~1000 DEG C, to stone
English pipe is evacuated to 10-1~10-2Pa；Argon gas using flow as 5~10 sccm be conveying gas, by selenizing molybdenum block surface by
The selenizing molybdenum molecule of thermal evaporation is transported to silicon chip surface, and nucleating growth is selenizing molybdenum film；After nucleating growth reaction terminates, in temperature
Spend to be made annealing treatment 30~60 minutes in 800 DEG C, argon gas atmosphere, obtain selenizing molybdenum/silicon heterogenous；
3. electrode fabrication：Using high purity nickel as target source, using magnetically controlled sputter method, on selenizing molybdenum film surface, sputtering nickel is contact electricity
Pole, aluminium electrode is deposited to silicon chip lower surface, the negative electrode of solar cell is formed, obtains a kind of selenizing molybdenum/silicon heterogenous solar energy
Battery.
The nucleating growth reaction time of above-mentioned steps 2 is 5~10 minutes；Reaction pressure is 40~100 Pa.
Compared with prior art, it by selenizing molybdenum powder is that reaction raw material, n-type (100) silicon chip be to serve as a contrast that inventive technique scheme, which is,
Egative film, argon gas（Ar）As carrier gas, MoSe is carried2Molecule forms two-dimentional MoSe2 films, its advantage on a silicon substrate
It is：The deposition process that the present invention uses can preferably control MoSe2The speed of growth of molecule, so as to obtain ultra-thin, large area
Uniformly, the MoSe of surfacing roughness very little2Film, MoSe can be effectively reduced2The interfacial characteristics of/Si hetero-junctions, reduce electric leakage
Stream, improve the photoelectric transformation efficiency of solar cell.This method is simple and easy, multiplicity is high, and cost is low, suitable for popularization and industry
Change.
Brief description of the drawings
Fig. 1 is MoSe provided in an embodiment of the present invention2The structural representation of/Si heterojunction solar batteries；
In figure, 1.Ni electrodes；2. selenizing molybdenum film layer；3.n type Si conductive layers；4.Al electrodes.
Fig. 2 is MoSe provided in an embodiment of the present invention2The band structure schematic diagram of/Si heterojunction solar batteries；
Fig. 3 is MoSe provided in an embodiment of the present invention2The operation principle schematic diagram of/Si heterojunction solar batteries；
Fig. 4 is MoSe provided in an embodiment of the present invention2Film uses the structural representation of chemical gas-phase deposition system device；
Fig. 5 is the MoSe that the embodiment of the present invention utilizes chemical gaseous phase depositing process to prepare2The surface topography map of film；
Fig. 6 is the MoSe that the embodiment of the present invention utilizes chemical gaseous phase depositing process to prepare2The x-ray diffraction pattern of film；
Fig. 7 is the MoSe that the embodiment of the present invention utilizes chemical gaseous phase depositing process to prepare2The UV, visible light light reflection spectrum of film；
Fig. 8 is MoSe provided in an embodiment of the present invention2The dark current of/Si heterojunction solar batteries-voltage characteristic curve figure；
Fig. 9 is the MoSe provided in an embodiment of the present invention under 350mW white lights2The voltage of/Si heterojunction solar batteries-
Current characteristic figure.
Embodiment
Technical solution of the present invention is further elaborated with reference to the accompanying drawings and examples.
Embodiment 1
Referring to accompanying drawing 1, it is the MoSe that the present embodiment provides2The structural representation of/Si heterojunction solar batteries, it includes Ni
Electrode 1, selenizing molybdenum film layer 2, n-type Si conductive layers 3 and Al electrodes 5.
The selenizing molybdenum of chemical gaseous phase depositing process more than ten of atomic layers thick of growth is utilized to the upper surface of n-type silicon chip (100)
Film, this layer of selenizing molybdenum film form hetero-junctions with n-type silicon, form solar battery structure.
Referring to accompanying drawing 2, it is the MoSe that the present embodiment provides2The band structure schematic diagram of/Si heterojunction solar batteries；
In Fig. 2,（a1）、（b1）Band structure respectively before selenizing molybdenum and Si contacts, wherein,χ 1 For the electron affinity of selenizing molybdenum
（4.35eV）,E c1、E v1And EF1It is conduction band, valence band and the fermi level of selenizing molybdenum respectively, Eg1For the band gap width of selenizing molybdenum
(1.5eV)。χ 2 For Si electron affinity（4.05eV）,E c2 、E v2 And EF2Respectively Si conduction band, valence band and fermi level, Eg2
For Si band gap width (1.14eV).It is MoSe2The band structure schematic diagram of/Si heterojunction solar batteries.In Fig. 2,
（a2）、（b2）It is MoSe respectively2Reach band structure during balance after being contacted with Si.Although the electron affinity of selenizing molybdenum compares silicon
It is big, but n-Si fermi level be higher than selenizing molybdenum fermi level, the difference between the two is Δ EF, after the two contact, Si surfaces
Electronics spreads to selenizing molybdenum side, leaves immovable positive center.As a result Si conduction band, valence band is made integrally to move down Δ EF
Highly, at the two Contact Boundary, it is qV to form heightDPotential barrier, form space-charge region on contact surface.Space-charge region shape
Into built in field, MoSe is pointed in direction by Si2Side, due to an electron is negatively charged lotus, built in field prevent the electronics of Si sides after
Continue to MoSe2Side is spread, so as to reach dynamic equilibrium.
The MoSe that the present embodiment provides2The photoelectricity transformation principle of/Si heterojunction solar batteries is referring to accompanying drawing 3.Selenizing molybdenum
It is direct band gap, after selenizing molybdenum film absorbs photon energy, when photon energy is more than selenizing molybdenum energy gap, its valence-band electrons jump
Adjourn conduction band formed electron-hole pair, be easy under illumination produce electron-hole pair, light induced electron caused by selenizing molybdenum surface-
Hole from selenizing molybdenum surface to internally spreading, and when selenizing molybdenum thickness is sufficiently thin, electronics will soon move to selenizing molybdenum/Si
The space-charge region border of formation, is diffused into MoSe2During/Si hetero-junctions space-charge region border, in space-charge region internal electric fieldE It is interior The lower light induced electron of effect is swept to rapidlyn- Si areas,n- Si surfaces form electron accumulation layer；And photohole is diffused into space
During charged region border, by the interception of built in field, it is impossible to continue to move to and stay in selenizing molybdenum side, make selenizing molybdenum surface shape
Into hole accumulation layer.Therefore, hole caused by illumination and electronics are accumulated on selenizing molybdenum surface and n-Si surfaces respectively, make selenizing
Molybdenum/silicon heterogenous both sides form voltage difference, and the voltage difference is the voltage difference caused by illumination under without extraneous bias effect, therefore claim
For photovoltaic effect.
In solar cell photovoltaic effect is formed, MoSe2Built in field in/Si hetero-junctionsE It is interior Play acceleration
The effect of electron motion.Compared with traditional silicon pn-junction solar cell, selenizing molybdenum film is direct band-gap semicondictor material, photoelectricity
High conversion efficiency, so as to be greatly enhanced the conversion efficiency of solar cell.By the open-circuit voltage for measuring the deviceV oc With
Short-circuit current densityJ, it is possible to calculate the energy conversion efficiency of the solar cell.
Referring to accompanying drawing 4, it is that the present embodiment uses chemical vapor deposition（CVD）Method prepares the apparatus structure of selenizing molybdenum film
Schematic diagram.The device is made up of four parts：The reactive deposition room of quartz ampoule composition, vacuum-pumping system, gas mass flow gauge
And temperature control system.Backing material uses resistivity as 3~5 Ω cm, crystal orientation（100）'snType silicon（Si）Piece, size 12
×12 mm2×500 μm。
Preparation method comprises the following steps：
Substrate cleans：Remove the silica on Si surfaces with dilute HF acid soaks 15 minutes first, then successively with acetone, ethanol, go
Ionized water ultrasonic wave cleans, and removes the organic matter on silicon chip, is finally dried up with nitrogen, be then placed in quartz ampoule., will before deposition
Quartz ampoule is evacuated to 10-2Pa, it is heated to 300 DEG C and maintains 10 minutes, to remove the steam of silicon chip surface.
It is prepared by selenizing molybdenum film：Selenizing molybdenum fritter is put into quartz ampoule, quartz ampoule temperature is increased to 650~1000 DEG C,
Quartz ampoule is evacuated to 10- 2Pa vacuum state（It can be controlled in 10-1~10-2In the range of Pa）, be passed through argon gas (99.999%) and,
Flow is 5~10 sccm.The ventilation flow rate of gas valve is regulated, keeps argon gas uniformly to flow into.Under high temperature, selenizing molybdenum surface
By thermal evaporation, selenizing molybdenum molecule reaches silicon chip surface nucleating growth under argon gas conveying.
The growth of selenizing molybdenum film：Selenizing molybdenum block is decomposed into selenium atom and molybdenum atom under 750 DEG C of high temperature, defeated in argon gas
Running reaches silicon chip surface with lower selenizing molybdenum molecule and is adsorbed to surface, finally in substrate surface after substrate surface migration
Nucleation, then attract the other selenium of gravitational attraction and molybdenum atom, and bonding forms the selenizing molybdenum film of hexagonal network structure therewith.Usual feelings
Under condition, in the case of reactant abundance, the speed of CVD deposit films is very fast.In the present embodiment, use
Argon flow amount very little, only a small amount of atom reaches silicon chip surface in the unit interval, by controlling the reaction time, it is possible to surpassed
Thin selenizing molybdenum film.In the present embodiment, the nucleating growth reaction time：5~10 minutes；The Pa of reaction pressure 40~100.Instead
After should terminating, it is 800 DEG C, makes annealing treatment 30~60 minutes in argon gas atmosphere in temperature, obtains selenizing molybdenum/silicon heterogenous.Deng stone
English pipe temperature drops to room temperature, takes out sample.
Electrode fabrication：Contact electrode is done in selenizing molybdenum film surface sputtering nickel (Ni).To n- silicon chips lower surface AM aluminum metallization electricity
Pole, form the negative electrode of solar cell.Complete MoSe2The preparation of/Si heterojunction solar batteries.
The MoSe that will be prepared2/ Si heterojunction solar batteries carry out surface topography and photovoltaic effect measurement, electric current/
Voltage test device and Hall effect analyze the surface topography and photocurrent characteristics of the device.Surface topography uses atomic force microscopy
Mirror (AFM).Using x-ray analysis structure, and use ultraviolet-visible light（ UV-vis）Spectrophotometer (Shimadzu UV-
3600) reflectance spectrum of sample is analyzed, finally measures MoSe using the SCS microgalvanometers of Keithley 42002/ Si hetero-junctions knots
The photocurrent characteristics of solar cell.
Referring to accompanying drawing 5, the atomic force microscopy of the selenizing molybdenum film prepared on the Si pieces provided for the present embodiment.
By Fig. 5 MoSe2The surface topography of film can be seen that many selenizing molybdenum nano-pillars and be evenly distributed in Si pieces surface.The layer
The nm of the thickness of selenizing molybdenum film about 5~10, equivalent to more than ten atomic layers thick.
Referring to accompanying drawing 6, the X-ray diffractogram of the selenizing molybdenum film provided for the present embodiment.As can be seen that MoSe2Sample
There is obvious diffraction maximum at 30 ° and 118 °, correspond respectively to (021) and (2011) crystal face of selenizing molybdenum.From diffraction maximum
Intensity see that the intensity of (021) crystal face is much larger than the intensity of (2011) crystal face, illustrates MoSe2Have in (021) crystal plane direction excellent
The orientation first grown.Two diffraction maximums are all in wire, have very narrow halfwidth, and the selenizing molybdenum film for illustrating growth is in lenticular
State, and there is uniform particle size.
Referring to accompanying drawing 7, the reflectance spectrum of the selenizing molybdenum film provided for the present embodiment.In 400~700 nm visible region,
The reflectivity of selenizing molybdenum film is gradually reduced, and absorptivity gradually increases, particularly in 500~700 nm wave bands, selenizing molybdenum film
It is higher to the absorptivity of light;High-absorbility can effectively improve the conversion efficiency of solar cell.
Referring to accompanying drawing 8, the MoSe provided for embodiment2The dark current characteristic of/Si heterojunction solar batteries（No light
Characteristic）Curve map；As a result show, the device has good rectification characteristic, and with the rise of applied voltage, electric current exponentially increases
Greatly.And under reverse biased, its reverse drain saturation current very little is almost nil.And utilize Hall effect apparatus measures selenizing molybdenum
The carrier concentration and electron mobility on surface.The carrier concentration on the selenizing molybdenum film surface of preparation is 1010 cm-2, electronics
Mobility is 2.5 × 103 cm2 V-1 s-1, illustrate the good conductivity of selenizing molybdenum film prepared by the present invention.
Referring to accompanying drawing 9, it is in 350 mW cm-2The MoSe that the present embodiment provides under white light2/ Si hetero-junctions the sun
The photocurrent characteristics curve map of energy battery.As can be seen that the open-circuit voltage of the solar cellV ocFor 0.52 V, short circuit electricity
Current densityJ scFor 0.08 mA cm-2It can be calculated that the MoSe2The energy conversion efficiency of/Si heterojunction solar batteries is
2.26%。
Claims (3)
- A kind of 1. selenizing molybdenum/silicon heterogenous solar cell, it is characterised in that：Using two-dimentional selenizing molybdenum film and silicon chip as photosensitive list Member, absorb visible ray and near infrared light, selenizing molybdenum/silicon heterogenous for the core in solar cell light induced electron and hole collection list Member.
- A kind of 2. preparation method of selenizing molybdenum/silicon heterogenous solar cell, it is characterised in that：Comprise the following steps：（1）Substrate cleans：Using n-type (100) silicon chip as substrate, the silica on Si surfaces is removed with dilute HF acid soaks, then successively Cleaned with acetone, ethanol, deionized water ultrasonic wave, remove the organic matter on silicon chip；Reheated after being dried up with nitrogen and remove silicon chip The steam on surface；（2）It is prepared by selenizing molybdenum film：Selenizing molybdenum block is put into quartz ampoule, quartz ampoule temperature is increased to 650~1000 DEG C, to stone English pipe is evacuated to 10-1~10-2Pa；Argon gas using flow as 5~10 sccm be conveying gas, by selenizing molybdenum block surface by The selenizing molybdenum molecule of thermal evaporation is transported to silicon chip surface, and nucleating growth is selenizing molybdenum film；After nucleating growth reaction terminates, in temperature Spend to be made annealing treatment 30~60 minutes in 800 DEG C, argon gas atmosphere, obtain selenizing molybdenum/silicon heterogenous；（3）Electrode fabrication：Using high purity nickel as target source, using magnetically controlled sputter method, on selenizing molybdenum film surface, sputtering nickel is contact Electrode, aluminium electrode is deposited to silicon chip lower surface, the negative electrode of solar cell is formed, obtains a kind of selenizing molybdenum/silicon heterogenous sun Can battery.
- A kind of 3. preparation method of selenizing molybdenum/silicon heterogenous solar cell according to claim 2, it is characterised in that： Step（2）The nucleating growth reaction time be 5~10 minutes；Reaction pressure is 40~100 Pa.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465844A (en) * | 2014-11-27 | 2015-03-25 | 中国石油大学(华东) | MoS2/Si p-n junction solar cell device and preparation method thereof |
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2017
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465844A (en) * | 2014-11-27 | 2015-03-25 | 中国石油大学(华东) | MoS2/Si p-n junction solar cell device and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 何浩 等: "自组织InAs/GaAs与InGaAs/GaAs量子点生长", 《真空》 * |
| 张强 等: "二维硒化钼薄膜的研究进展", 《微纳电子技术》 * |
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