CN104465844A - MoS2/Si p-n junction solar cell device and preparation method thereof - Google Patents
MoS2/Si p-n junction solar cell device and preparation method thereof Download PDFInfo
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- CN104465844A CN104465844A CN201410699047.1A CN201410699047A CN104465844A CN 104465844 A CN104465844 A CN 104465844A CN 201410699047 A CN201410699047 A CN 201410699047A CN 104465844 A CN104465844 A CN 104465844A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229910052961 molybdenite Inorganic materials 0.000 title abstract description 11
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title abstract description 11
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 description 11
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a MoS2/Si p-n junction solar cell device and a preparation method of the MoS2/Si p-n junction solar cell device. The MoS2/Si p-n junction solar cell device comprises a MoS2/Si thin film layer, a Si substrate serving as a thin film layer carrier, a metal Pd front electrode and a metal In back electrode. The n-type MoS2 thin film is deposited on the surface of the p-type Si substrate, a p-n junction is formed, and the MoS2/Si p-n junction solar cell device is developed. The method comprises the steps of preparation of the MoS2/Si p-n junction and preparation of metal electrodes, wherein firstly the magnetron sputtering technology is adopted, the MoS2 thin film is deposited on the surface of the p-type Si substrate, then preparation of the metal Pd front electrode and the metal In back electrode is finished, and the integral cell device is formed. The performance testing result shows that the MoS2/Si p-n junction solar cell device has the obvious photovoltaic characteristic, and under the lighting condition of 15 mW/cm<2>, the short circuit current is 3.16 mA/cm<2>, the open circuit voltage is 0.13 V, the fill factor is 0.46 and the conversion efficiency is 1.3%.
Description
Technical field
The invention belongs to new forms of energy photovoltaic field, specifically relate to a kind of MoS
2/ Si p-n junction solar cell device, and prepare MoS based on magnetron sputtering technique
2the method of/Si p-n junction solar cell device.
Background technology
Since entering 21st century, along with the raising of social development and people's living standard, the demand of people to the energy sharply increases.Traditional fossil energy day by day exhausted and manifesting gradually the destruction that environment causes, forces various countries using the development and utilization of new forms of energy as national future source of energy development strategy.Solar energy is the most general in new forms of energy, is also comparatively early used by people, and have with power technology compatibility good, fail safe advantages of higher.Solar cell is a kind of common device solar energy being converted to electric energy.On current photovoltaic market, 80% is crystal silicon solar energy battery, and crystal silicon solar energy battery conversion efficiency reaches 24.7%, close to theoretical values 30%.But production process energy consumption is high, and cost is high, big for environment pollution, seriously hinders crystal silicon solar energy battery and apply on a large scale.Secondly, cadmium telluride (CdTe) and Copper Indium Gallium Selenide (CIGS) thin-film solar cells also occupy very large proportion on photovoltaic market.The cadmium telluride (CdTe) of solar cell company of the U.S. first and the photoelectric conversion efficiency of Copper Indium Gallium Selenide (CIGS) solar cell all reach more than 11%, but in cadmium telluride, tellurium is tellurian rare element, simultaneously, heavy metal cadmium in cadmium telluride diaphragm solar battery, in the industrial production can to environment.Copper-indium-galliun-selenium film solar cell preparation flow is complicated, and cost is high, and defective products rate is high, the H that battery initialization layer selenization technology uses
2se gas, has severe toxicity, volatile.These unfavorable conditions all limit the large-scale application of this compounds in area of solar cell.In thin film type solar battery research, dye-sensitized nano film solar battery preparation cost is lower, and the laboratory peak efficiency of current this battery reaches 12%.But due to the existence of liquid electrolyte, the less stable of this battery.Therefore, find a kind of environmental protection, cost is low, and efficiently, stable, the simple solar cell of technique has become current heat subject.Current various novel semiconductor material is applied to the development of novel thin film solar cell, wherein semiconductor MoS
2the premium properties shown at photovoltaic art attracts wide attention.
MoS
2be a kind of transient metal sulfide, stable chemical nature, thermal stability is good.Therefore, MoS
2the fields such as physics, material, chemistry are widely used in as a kind of New Two Dimensional stratified nano materials.The MoS of stratiform
2nanoscale has two-dimensional structure, this microminiaturization and high energy efficiency electronic chip of realizing semiconductor easier than the said three-dimensional body phase structure of nano silicon material.Such as: individual layer MoS
2transistor be proved switch ratio and reached 10
8, and energy consumption is lower.Relative to zero band gap of Graphene, molybdenum bisuphide also exists regulatable band gap (MoS
2energy gap 1.2 ~ 1.8eV), therefore there is wide field preparing field of photoelectric devices.The people such as Tsai propose the individual layer MoS utilizing chemical deposition to obtain
2define P-N junction with p-Si, experimental result shows, the conversion efficiency of the solar cell device of this structure reaches 5.23%, is the most high conversion efficiency reached in the transient metal sulfide solar cell of this structure.But, individual layer MoS
2all existing defects in light absorption and electro transfer.The people such as Shanmugam propose the multilayer MoS deposited on ito glass
2form schottky junction with metallic gold (Au), the photoelectricity of the solar cell of this structure changes efficiency and reaches 1.8%, but this preparation process is complicated, and blemish is many, and bad ratio defective product is high.Comparatively speaking, MoS
2thin-film solar cells preparation technology is simple, easy large area deposition, prepares and nonhazardous material generation in use procedure.Meanwhile, with film shape, be conducive to MoS
2material and conventional semiconductors Si carry out superposing integrated, are very applicable to large-scale industrial production.
Summary of the invention
Based on above-mentioned technical problem, the invention provides a kind of MoS
2/ Si p-n junction solar cell device, and this MoS
2the preparation method of/Si p-n junction solar cell device.
The technology used in the present invention solution is:
A kind of MoS
2/ Si p-n junction solar cell device, comprises MoS
2thin layer, as MoS
2the Si substrate of thin layer carrier, metal Pd electrode and metal In electrode, MoS
2thin layer is arranged on Si substrate one side, and metal Pd electrode is arranged on MoS
2thin-film surface, metal In electrode is arranged on Si substrate another side, and metal Pd electrode and metal In electrode be connection metal Cu wire respectively.
Preferably, described MoS
2thin film layer thickness is 70-80nm.
Preferably, described Si substrate is p-type Si single crystalline substrate, and resistivity is 1.2 ~ 1.8 Ω cm.
Preferably, the thickness of described metal Pd electrode is 30-40nm, and the thickness of described metal In electrode is 0.2mm, and the diameter of described Cu wire is 0.1mm.
A kind of MoS
2the preparation method of/Si p-n junction solar cell device, comprises the following steps:
(1) choose Si substrate, first time cleaning is carried out to it, then adopt chemical corrosion method to remove Si substrate surface oxide layer after cleaning, then carry out second time clean removing the Si substrate of surface oxide layer, cleaned and rear drying has been carried out to Si substrate;
(2) dried Si substrate loaded pallet and put into vacuum chamber, under Ar gas gaseous environment, adopting magnetically controlled DC sputtering technology, utilize the Ions Bombardment MoS ionized out
2target, at Si substrate surface deposition MoS
2thin layer;
(3) again under vacuum chamber and Ar gas gaseous environment, adopt magnetically controlled DC sputtering technology, utilize the Ions Bombardment Pd target ionized out, at MoS
2thin-film surface plated metal Pd electrode;
(4) adopt hot pressing mode, complete the compacting of metal In electrode at Si substrate back;
(5) on metal Pd electrode and metal In electrode, draw Ni metal wire respectively, complete MoS
2the preparation of/Si p-n junction solar cell device.
Preferably, in step (1), described Si substrate is p-type Si single crystalline substrate, is of a size of 10 × 10mm, and resistivity is 1.2 ~ 1.8 Ω cm; Described first time, cleaning process was as follows: by the ultrasonic cleaning 600s in high absolute alcohol of the Si substrate with oxide layer; The removal process of described Si substrate surface oxide layer is as follows: the Si substrate with oxide layer is put into the hydrofluoric acid solution that volume fraction is 4%, and ultrasonic cleaning 60s; Described second time cleaning process is as follows: Si substrate is replaced ultrasonic cleaning 3 times successively in high absolute alcohol and acetone soln, and the time span of each cleaning is 180s; Described Si substrate dry run is dried up by Si substrate with drying nitrogen, and nitrogen gas purity is 99.95%.
Preferably, in step (2), described MoS
2target is MoS
2ceramic target, target purity is 99.9%, and it is constant that described Ar gas air pressure maintains 0.3Pa, and target-substrate distance is 50mm, and the depositing temperature of thin layer is 380 DEG C, and thin film layer thickness is 70-80nm.
Preferably, in step (3), described Pd target is Pd metallic target, and target purity is 99.99%, and it is constant that described Ar gas air pressure maintains 3Pa, and target-substrate distance is 50mm, and the depositing temperature of thin layer is 20-25 DEG C, and metal Pd thickness of electrode is 30-40nm.
Preferably, step (2) is with step (3), and the back end vacuum degree of described vacuum chamber is 5 × 10
-4pa, vacuum condition is jointly obtained by mechanical pump and molecular pump two-stage vacuum pump.
Preferably, in step (4), the thickness of described metal In electrode is 0.2mm.
Compared with prior art, Advantageous Effects of the present invention is:
The present invention is by depositing MoS at p-Si substrate surface
2film, form p-n junction, the photovoltaic effect utilizing this p-n junction to have, have developed a kind of MoS
2/ Si p-n junction solar cell device.Test result shows: be 15mW/cm at power
2under illumination condition, prepared MoS
2/ Si p-n junction solar cell has obvious photovoltaic performance, short circuit current 3.16mA/cm
2, open circuit voltage 0.13V, fill factor, curve factor 0.46, photoelectric conversion efficiency 1.3%.Meanwhile, this MoS
2it is fast that/Si p-n junction solar cell has the response time, repeatable high, and more weak photo attenuation effect is with low cost, steady performance, and preparation method is simple, and energy consumption is low, environmental protection.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the invention will be further described:
Fig. 1 is prepared MoS
2the Raman spectrogram of/Si p-n junction.
Fig. 2 is MoS
2the structural representation of/Si p-n junction solar cell device performance measurement.
Fig. 3 is MoS
2the photovoltaic performance curve of/Si p-n junction solar cell device.
Fig. 4 is MoS
2/ Si p-n junction solar cell device short circuit current is with the response performance of illumination condition.
Fig. 5 is MoS
2/ Si p-n junction solar cell device open circuit voltage is with the response performance of illumination condition.
Embodiment
The present invention utilizes magnetically controlled DC sputtering technology, and p-Si Semiconductor substrate deposits MoS
2thin layer, forms p-n junction.When there being illumination, under the effect of internal electric field, there is diffusion and drift in photo-generated carrier, final p-n junction two ends form a stable photovoltage, i.e. photovoltaic effect.
Below to MoS
2structure and the preparation method of/Si p-n junction solar cell device are described in detail.
A kind of MoS
2/ Si p-n junction solar cell device, comprises MoS
2thin layer, as MoS
2electrode and metal In back electrode before the Si substrate of thin layer carrier, metal Pd.MoS
2thin layer is arranged on Si substrate surface, MoS
2thin film layer thickness is 70-80nm, Si substrate is p-type Si single crystalline substrate, and resistivity is 1.2 ~ 1.8 Ω cm.Before metal Pd, electrode is arranged on MoS
2thin-film surface, metal In back electrode is arranged on Si substrate back.Electrode and metal In back electrode connection metal Cu wire respectively before metal Pd.Before metal Pd, the thickness of electrode is 30-40nm, and the thickness of metal In back electrode is the diameter of 0.2mm, Cu wire is 0.1mm.
Above-mentioned MoS
2the preparation method of/Si p-n junction solar cell device, comprises the following steps:
(1) p-type Si single crystalline substrate is chosen, be of a size of 10 × 10mm, resistivity is 1.2 ~ 1.8 Ω cm, first time cleaning is carried out to it, then chemical corrosion method is adopted to remove the rear Si substrate surface oxide layer of cleaning, carry out second time clean removing the Si substrate of surface oxide layer again, cleaned and rear drying has been carried out to Si substrate.
(2) dried Si substrate loaded pallet and put into vacuum chamber, the back end vacuum degree of vacuum chamber is 5 × 10
-4pa, under Ar gas gaseous environment, adopts magnetically controlled DC sputtering technology, utilizes the Ions Bombardment MoS ionized out
2target, at Si substrate surface deposition MoS
2thin layer.Described MoS
2target is MoS
2ceramic target, target purity is 99.9%, and it is constant that described Ar gas air pressure maintains 0.3Pa, and target-substrate distance is 50mm, and the depositing temperature of thin layer is 380 DEG C, and thin film layer thickness is 70-80nm.
(3) again under vacuum chamber and Ar gas gaseous environment, adopt magnetically controlled DC sputtering technology, utilize the Ions Bombardment Pd target ionized out, at MoS
2electrode before thin-film surface plated metal Pd.The back end vacuum degree of described vacuum chamber is 5 × 10
-4pa, described Pd target is Pd metallic target, and target purity is 99.99%, and it is constant that described Ar gas air pressure maintains 3Pa, and target-substrate distance is 50mm, and the depositing temperature of thin layer is 20-25 DEG C, and before metal Pd, thickness of electrode is 30-40nm.
(4) adopt hot pressing mode, complete the compacting of metal In back electrode at Si substrate back.The thickness of described metal In back electrode is 0.2mm.
(5) before metal Pd, electrode and metal In back electrode draw the Ni metal wire that diameter is 0.1mm respectively, complete MoS
2the preparation of/Si p-n junction solar cell device.
In step (1), described first time cleaning process as follows: by the ultrasonic cleaning 600s in high absolute alcohol of the Si substrate with oxide layer; The removal process of described Si substrate surface oxide layer is as follows: the Si substrate with oxide layer is put into the hydrofluoric acid solution that volume fraction is 4%, and ultrasonic cleaning 60s; Described second time cleaning process is as follows: Si substrate is replaced ultrasonic cleaning 3 times successively in high absolute alcohol and acetone soln, and the time span of each cleaning is 180s; Described Si substrate dry run is dried up by Si substrate with drying nitrogen, and nitrogen gas purity is 99.95%.
Step (2) is with step (3), and described vacuum condition is jointly obtained by mechanical pump and molecular pump two-stage vacuum pump.
Effect of the present invention is further illustrated below in conjunction with performance measurements:
Fig. 1 is the Raman spectrogram of MoS2/Si p-n junction.Raman shift 373cm in figure
-1and 410cm
-1scattering peak is MoS
2the characteristic peak of film, respectively corresponding surface internal vibration pattern (E
1 2g) and out-of-plane vibration pattern (A
1g).Raman shift 520cm
-1for the scattering peak of Si substrate.
Fig. 2 is MoS
2the structural representation of/Si p-n junction solar cell device performance measurement.In performance test process, the positive direction of definition electric current is for flowing to electrode before metal Pd by metal In back electrode.
Fig. 3 is MoS
2the photovoltaic performance curve of/Si p-n junction solar cell device.Article two, curve represents dark and 15mW/cm respectively
2volt-ampere characteristic under illumination condition.As shown in the figure, prepared MoS
2the I-V curve table of/Si p-n junction solar cell device reveals obvious asymmetric feature, and this is mainly because MoS
2the p-n junction that film and Si substrate are formed has good rectification characteristic.At 15mW/cm
2under illumination condition, this MoS
2/ Si p-n junction solar cell device shows good photovoltaic property: open circuit voltage 0.13V, short-circuit current density 3.16mA/cm
2, and this MoS
2the fill factor, curve factor of/Si p-n junction solar cell device is 0.46, and conversion efficiency reaches 1.3%.At home and abroad there is no MoS under this structure at present
2the report of/Si p-n junction solar cell device.
Fig. 4 is MoS
2/ Si p-n junction solar cell device short circuit current is with the response performance of illumination condition.Test voltage is 0V.As shown in the figure, by changing the illumination condition residing for it, prepared MoS
2/ Si p-n junction solar cell device, at illumination condition, electric current rapidly increases to 3.16mA/cm
2, at dark condition, electric current reduces rapidly.
Fig. 5 is MoS
2/ Si p-n junction solar cell device open circuit voltage is with the response performance of illumination condition.Test voltage is 0V.As shown in the figure, by changing the illumination condition residing for it, prepared MoS
2/ Si p-n junction solar cell device shows good photo absorption property, has fast response time, in stable condition, repeated advantages of higher.
Claims (10)
1. a MoS
2/ Si p-n junction solar cell device, is characterized in that: comprise MoS
2thin layer, as MoS
2the Si substrate of thin layer carrier, metal Pd electrode and metal In electrode, MoS
2thin layer is arranged on Si substrate one side, and metal Pd electrode is arranged on MoS
2thin-film surface, metal In electrode is arranged on Si substrate another side, and metal Pd electrode and metal In electrode be connection metal Cu wire respectively.
2. a kind of MoS according to claim 1
2/ Si p-n junction solar cell device, is characterized in that: described MoS
2thin film layer thickness is 70-80nm.
3. a kind of MoS according to claim 1
2/ Si p-n junction solar cell device, is characterized in that: described Si substrate is p-type Si single crystalline substrate, and resistivity is 1.2 ~ 1.8 Ω cm.
4. a kind of MoS according to claim 1
2/ Si p-n junction solar cell device, is characterized in that: the thickness of described metal Pd electrode is 30-40nm, and the thickness of described metal In electrode is 0.2mm, and the diameter of described Cu wire is 0.1mm.
5. a MoS
2the preparation method of/Si p-n junction solar cell device, is characterized in that comprising the following steps:
(1) choose Si substrate, first time cleaning is carried out to it, then adopt chemical corrosion method to remove Si substrate surface oxide layer after cleaning, then carry out second time clean removing the Si substrate of surface oxide layer, cleaned and rear drying has been carried out to Si substrate;
(2) dried Si substrate loaded pallet and put into vacuum chamber, under Ar gas gaseous environment, adopting magnetically controlled DC sputtering technology, utilize the Ions Bombardment MoS ionized out
2target, at Si substrate surface deposition MoS
2thin layer;
(3) again under vacuum chamber and Ar gas gaseous environment, adopt magnetically controlled DC sputtering technology, utilize the Ions Bombardment Pd target ionized out, at MoS
2thin-film surface plated metal Pd electrode;
(4) adopt hot pressing mode, complete the compacting of metal In electrode at Si substrate back;
(5) on metal Pd electrode and metal In electrode, draw Ni metal wire respectively, complete MoS
2the preparation of/Si p-n junction solar cell device.
6. a kind of MoS according to claim 5
2the preparation method of/Si p-n junction solar cell device, is characterized in that: in step (1), and described Si substrate is p-type Si single crystalline substrate, is of a size of 10 × 10mm, and resistivity is 1.2 ~ 1.8 Ω cm; Described first time, cleaning process was as follows: by the ultrasonic cleaning 600s in high absolute alcohol of the Si substrate with oxide layer; The removal process of described Si substrate surface oxide layer is as follows: the Si substrate with oxide layer is put into the hydrofluoric acid solution that volume fraction is 4%, and ultrasonic cleaning 60s; Described second time cleaning process is as follows: Si substrate is replaced ultrasonic cleaning 3 times successively in high absolute alcohol and acetone soln, and the time span of each cleaning is 180s; Described Si substrate dry run is dried up by Si substrate with drying nitrogen, and nitrogen gas purity is 99.95%.
7. a kind of MoS according to claim 5
2the preparation method of/Si p-n junction solar cell device, is characterized in that: in step (2), described MoS
2target is MoS
2ceramic target, target purity is 99.9%, and it is constant that described Ar gas air pressure maintains 0.3Pa, and target-substrate distance is 50mm, and the depositing temperature of thin layer is 380 DEG C, and thin film layer thickness is 70-80nm.
8. a kind of MoS according to claim 5
2the preparation method of/Si p-n junction solar cell device, it is characterized in that: in step (3), described Pd target is Pd metallic target, target purity is 99.99%, it is constant that described Ar gas air pressure maintains 3Pa, target-substrate distance is 50mm, and the depositing temperature of thin layer is 20-25 DEG C, and metal Pd thickness of electrode is 30-40nm.
9. a kind of MoS according to claim 5
2the preparation method of/Si p-n junction solar cell device, is characterized in that: step (2) is with step (3), and the back end vacuum degree of described vacuum chamber is 5 × 10
-4pa, vacuum condition is jointly obtained by mechanical pump and molecular pump two-stage vacuum pump.
10. a kind of MoS according to claim 5
2the preparation method of/Si p-n junction solar cell device, is characterized in that: in step (4), and the thickness of described metal In electrode is 0.2mm.
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| CN105244414A (en) * | 2015-10-20 | 2016-01-13 | 华中科技大学 | Molybdenum disulfide / silicon heterojunction solar energy cell and preparation method thereof |
| CN105702776A (en) * | 2016-02-03 | 2016-06-22 | 北京科技大学 | Self-driven light detector and manufacturing method therefor |
| CN105702776B (en) * | 2016-02-03 | 2017-03-15 | 北京科技大学 | A kind of self-driven photo-detector and preparation method thereof |
| CN106129796A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | The MoS prepared based on magnetron sputtering method2saturable absorption body thin film and corresponding ultrashort pulse fiber laser |
| CN107887469A (en) * | 2017-10-19 | 2018-04-06 | 苏州科技大学 | A kind of selenizing molybdenum/silicon heterogenous solar cell and preparation method thereof |
| CN109904238A (en) * | 2019-01-14 | 2019-06-18 | 中国科学院半导体研究所 | Schottky field-effect tube and preparation method based on silicon and transient metal sulfide |
| CN109904238B (en) * | 2019-01-14 | 2021-06-08 | 中国科学院半导体研究所 | Schottky field effect transistor based on silicon and transition metal sulfide and preparation method thereof |
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