CN107858756B - 一种单晶硅制绒添加剂及其应用 - Google Patents
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 20
- 239000000654 additive Substances 0.000 title claims abstract description 18
- 230000000996 additive effect Effects 0.000 title claims abstract description 18
- 239000003513 alkali Substances 0.000 claims abstract description 14
- 239000002608 ionic liquid Substances 0.000 claims abstract description 10
- 210000002268 wool Anatomy 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical group [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 5
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- OIWSIWZBQPTDKI-UHFFFAOYSA-N 1-butyl-3-methyl-2h-imidazole;hydrobromide Chemical compound [Br-].CCCC[NH+]1CN(C)C=C1 OIWSIWZBQPTDKI-UHFFFAOYSA-N 0.000 claims description 3
- FQERWQCDIIMLHB-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;chloride Chemical compound [Cl-].CC[NH+]1CN(C)C=C1 FQERWQCDIIMLHB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- 150000002460 imidazoles Chemical class 0.000 claims description 2
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 2
- 239000004299 sodium benzoate Substances 0.000 claims description 2
- 235000010234 sodium benzoate Nutrition 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- WWFKDEYBOOGHKL-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;bromide Chemical compound Br.CCN1CN(C)C=C1 WWFKDEYBOOGHKL-UHFFFAOYSA-N 0.000 claims 1
- LXKJXSIVSWFKQA-UHFFFAOYSA-N 1-methyl-3-propyl-1,2-dihydroimidazol-1-ium;bromide Chemical compound Br.CCCN1CN(C)C=C1 LXKJXSIVSWFKQA-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 27
- 235000012431 wafers Nutrition 0.000 description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002585 base Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- IBZJNLWLRUHZIX-UHFFFAOYSA-N 1-ethyl-3-methyl-2h-imidazole Chemical class CCN1CN(C)C=C1 IBZJNLWLRUHZIX-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- -1 alkali liquor) Chemical compound 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- KAIPKTYOBMEXRR-UHFFFAOYSA-N 1-butyl-3-methyl-2h-imidazole Chemical class CCCCN1CN(C)C=C1 KAIPKTYOBMEXRR-UHFFFAOYSA-N 0.000 description 1
- RILPVBCCHVYIJF-UHFFFAOYSA-N 1-ethyl-3-methyl-1,2-dihydroimidazol-1-ium;methanesulfonate Chemical compound CS(O)(=O)=O.CCN1CN(C)C=C1 RILPVBCCHVYIJF-UHFFFAOYSA-N 0.000 description 1
- BMQZYMYBQZGEEY-UHFFFAOYSA-M 1-ethyl-3-methylimidazolium chloride Chemical compound [Cl-].CCN1C=C[N+](C)=C1 BMQZYMYBQZGEEY-UHFFFAOYSA-M 0.000 description 1
- JFYZBXKLRPWSGV-UHFFFAOYSA-N 1-methyl-3-propyl-2h-imidazole Chemical class CCCN1CN(C)C=C1 JFYZBXKLRPWSGV-UHFFFAOYSA-N 0.000 description 1
- ZKKMHTVYCRUHLW-UHFFFAOYSA-N 2h-pyran-5-carboxamide Chemical compound NC(=O)C1=COCC=C1 ZKKMHTVYCRUHLW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
本发明属于硅片制绒技术，特别涉及一种单晶硅制绒添加剂及其应用。将特定的离子液体作为添加剂加入到碱液中制备制绒液，并采用该制绒液对单晶硅进行制绒，可在碱液低浓度的情况下促进腐蚀的进行，提高制绒效率；避免了硅片表面的规整性受到破坏，延长了制绒后硅片的使用寿命。
Description
技术领域
本发明属于硅片制绒技术，特别涉及一种单晶硅制绒添加剂及其应用。
背景技术
制绒是太阳能电池生产工艺流程中的重要工序，在单晶硅表面形成类似金字塔的结构，可降低硅片表面对太阳光的反射率，增加光的吸收，从而提高太阳能转化为电能的效率。
在现有的单晶硅制绒工艺中，如果直接采用强碱(如氢氧化物)对硅片表面进行腐蚀的话，腐蚀反应剧烈不易控制，会破坏硅片表面的规整性甚至是硅片的基础结构，因此这一类强碱制绒剂通常需要与缓腐蚀剂(如异丙醇、硅酸钠)配合使用，但是异丙醇等缓蚀剂挥发性强，导致制绒剂使用寿命短；且不环保，有悖于目前提倡的绿色工业生产。
而如果在制绒过程中直接采用弱碱或进一步降低强碱制绒液的浓度，会使腐蚀速率减慢，大大降低了生产速率。
因此开发一种稳定性高、制绒效率快且环保的制绒添加剂或制绒剂具有重大意义。
发明内容
本发明相当于是针对现有技术中“直接采用弱碱或降低强碱制绒液的浓度，会使腐蚀速率减慢，降低生产速率”这一问题，提供一种单晶硅制绒添加剂，即一种离子液体，
该离子液体为卤代咪唑类离子液体，如溴化1-乙基-3-甲基咪唑、溴化1-丙基-3-甲基咪唑、溴化1-丁基-3-甲基咪唑或氯化1-乙基-3-甲基咪唑等；
本发明还提供了一种上述单晶硅制绒添加剂的应用，即将该添加剂加入到碱液中制备制绒液，并采用该制绒液对单晶硅进行制绒，
其中，添加剂在制绒液中的质量浓度控制为1.5～3％，而碱液中的碱为氢氧化物，如氢氧化钠、氢氧化钾等，氢氧化物在制绒液中的质量浓度控制为0.4～2％，
同时，制绒液中还可以加入苯甲酸钠、表面活性剂、抗坏血酸、分散剂、增溶剂、稳定剂等功能性助剂。
本发明的有益效果在于：采用特定的离子液体来辅助碱液对硅片表面进行制绒，在碱液低浓度的情况下促进了腐蚀的进行，提高了制绒效率；并且由于碱浓度较低，确保了腐蚀反应的平稳程度，避免了硅片表面的规整性受到破坏，延长了制绒后硅片的使用寿命。
具体实施方式
实施例1
将氢氧化钠溶解于纯水中得到氢氧化钠溶液(即碱液)，再向其中加入氯化1-乙基-3-甲基咪唑并充分混合后得到制绒液，控制氢氧化钠在该制绒液中的质量浓度为0.7％，氯化1-乙基-3-甲基咪唑在该制绒液中的质量浓度为1.9％。
实施例2
将氢氧化钾溶解于纯水中得到氢氧化钾溶液(即碱液)，再向其中加入溴化1-丁基-3-甲基咪唑并充分混合后得到制绒液，控制氢氧化钾在该制绒液中的质量浓度为1.0％，溴化1-丁基-3-甲基咪唑在该制绒液中的质量浓度为2.3％。
对比实施例1
制绒液中未加入离子液体，其余操作均同实施例1：
将氢氧化钠溶解于纯水中得到氢氧化钠溶液，即制绒液，控制氢氧化钠在该制绒液中的质量浓度为0.7％。
对比实施例2
采用等摩尔的1-乙基-3-甲基咪唑四氟硼酸盐代替实施例1中的“氯化1-乙基-3-甲基咪唑”，其余操作均同实施例1。
对比实施例3
采用等摩尔的1-乙基-3-甲基咪唑甲磺酸盐代替实施例1中的“氯化1-乙基-3-甲基咪唑”，其余操作均同实施例1。
对比实施例4
制绒液中未加入任何碱，其余操作均同实施例1：
将氯化1-乙基-3-甲基咪唑与纯水充分混合得到制绒液，控制氯化1-乙基-3-甲基咪唑在该制绒液中的质量浓度为1.9％。
实验检测：
将同一规格、质量的单晶硅片用乙醇去除表面油脂后，置于上述各实施例或对比实施例的制绒液中，在温度70℃下制绒处理10分钟，取出，用去离子水充分冲洗后干燥。对制绒后的单晶硅片表面通过光反射检测仪在850nm处测试其光反射效果，
经过上述实施例1、实施例2的制绒液处理后的硅片表面均形成金字塔结构，且大小均匀、形貌规整；经过上述对比实施例1、对比实施例2、对比实施例3的制绒液处理后的硅片表面的金字塔形貌均不明显；经过上述对比实施例4的制绒液处理后的硅片表面没有变化，且性能与未经任何制绒处理的空白硅片基本无差别。具体检测结果请见表1：
表1
对比实施例5
在对比实施例1的基础上，将制绒液中氢氧化钠的浓度增加一倍(但依然不加入离子液体)，制绒操作同上，此时检测实施例1和对比实施例5制绒液处理的硅片绒面性能，如表2所示：
表2
| 实施例1 | 对比实施例5 | |
| 角锥体边长 | 1.7～2.3μm | 大于10μm |
| 角锥体分布 | 均匀、规整 | 不均匀、杂乱 |
| 光反射率 | 10％ | 45％ |
Claims (5)
1.一种单晶硅制绒添加剂，其特征在于：所述的单晶硅制绒添加剂为离子液体，所述离子液体为卤代咪唑类离子液体，具体为溴化1-乙基-3-甲基咪唑、溴化1-丙基-3-甲基咪唑、溴化1-丁基-3-甲基咪唑或氯化1-乙基-3-甲基咪唑。
2.一种如权利要求1所述的单晶硅制绒添加剂的应用，其特征在于：所述的应用为，将所述添加剂加入到碱液中制备制绒液，并采用所述制绒液对单晶硅进行制绒。
3.如权利要求2所述的单晶硅制绒添加剂的应用，其特征在于：所述碱液中的碱为氢氧化物，所述氢氧化物在所述制绒液中的质量浓度为0.4～2％。
4.如权利要求2所述的单晶硅制绒添加剂的应用，其特征在于：所述添加剂在所述制绒液中的质量浓度为1.5～3％。
5.如权利要求2所述的单晶硅制绒添加剂的应用，其特征在于：所述的制绒液中还包括苯甲酸钠、表面活性剂、抗坏血酸、分散剂、增溶剂、稳定剂中的一种或几种。
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| CN105113014A (zh) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | 一种除异味单晶硅片制绒液及其制备方法 |
| CN105238574A (zh) * | 2015-10-19 | 2016-01-13 | 南京润屹电子科技有限公司 | 一种太阳能单晶硅片清洗剂及其制备方法 |
| CN106206774A (zh) * | 2016-06-30 | 2016-12-07 | 常州时创能源科技有限公司 | 在硅片上制备均匀微纳复合绒面的方法 |
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