CN107836030B - 介电组成、介电元件、电子部件和多层电子部件 - Google Patents
介电组成、介电元件、电子部件和多层电子部件 Download PDFInfo
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- CN107836030B CN107836030B CN201680042074.9A CN201680042074A CN107836030B CN 107836030 B CN107836030 B CN 107836030B CN 201680042074 A CN201680042074 A CN 201680042074A CN 107836030 B CN107836030 B CN 107836030B
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- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 11
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- 229910052791 calcium Inorganic materials 0.000 claims abstract description 8
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- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 7
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- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
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Abstract
所解决的问题在于提供一种介电组成,该介电组成被有利地用在其中施加高电压的位置中,该介电组成具有当施加DC偏压时的极好的介电常数、极好的DC偏压特性,并且还具有极好的机械强度;并且还在于提供一种包括所述介电组成的介电元件、电子部件和层压电子部件。一种具有包含至少Bi、Na、Sr和Ti的钙钛矿晶体结构的介电组成。所述介电组成包括从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的至少一种。所述介电组成包括具有核‑壳结构的特定颗粒,所述核‑壳结构具有至少一个包括SrTiO3的核部分。0.20≤α≤0.70,其中α是特定颗粒的数目相对于包含在介电组成中的颗粒的总数目的比。
Description
技术领域
本发明涉及介电组成以及包括所述介电组成的介电元件,并且涉及电子部件和层压电子部件;更具体地,本发明涉及被用于具有相对高的额定电压的应用的介电组成、介电元件、电子部件和层压电子部件。
背景技术
近年来,随着电子电路达到更高的密度,对介电元件的小型化和增加的可靠性的要求越来越大,并且电子部件(诸如层压陶瓷电容器)的小型化连同增加的容量和更高的可靠性正在迅速发展,同时其应用也在扩大。在这种情况发生时,需要各种特性。包括钛酸钡(BaTiO3)作为主要组分的材料常规地经常用作用于此类应用的介电组成。
例如,诸如机动车辆DC-DC转换器或AC-DC逆变器的平滑电容器或缓冲电容器经常用在其中施加数百伏特的高DC偏压的位置中。因此,在这些电子部件中使用的介电元件必须具有当施加高DC偏压时的高介电常数。另外,如果介电材料具有低机械强度,则存有在生产期间或在基板上安装期间破裂或***等的风险,以及因此产品不适合的风险;同时也需要高机械强度。
因此,对于具有包括以BaTiO3作为主要组分的介电组成的介电层的常规电子部件存在问题,因为当施加高DC偏压时存在介电常数的减小。该问题是由于以下事实:BaTiO3是铁电材料,这使得该问题在将BaTiO3用作主要组分时难以避免。因此当具有包括以BaTiO3作为主要组分的介电组成的介电层的电子部件被用于涉及高DC偏压施加的应用时,有必要想出一种用于使用这样的电子部件的方法。根据已知方法的一个示例,预测介电常数减小的量并且使多个电子部件并联连接以供使用,以便维持需要的电容或介电常数。
此外,当以BaTiO3作为主要组分的常规介电组成被用于在数伏特或更少的低DC偏压下的应用时,施加到介电层上的场强度是小的,因此可能采用如下设计:其中介电层充分薄并且电极表面积充分小使得不发生击穿。那就是说,能够使介电材料更紧凑并且重量更轻。如果介电材料更小并且重量更轻,则还减小了所需要的机械强度。例如,即使介电材料在生产期间跌落也基本上没有破裂或***,因为可能维持与介电材料的尺寸和重量相称的足够的机械强度。然而,当以BaTiO3作为主要组分的常规介电组成在数百伏特或更大的高DC偏压下使用时,介电层必须充分厚以确保相对于击穿的安全性。因此,有必要增加电极表面积以便维持需要的电容。那就是说,介电材料趋于变得更大和更重。因此,所需要的机械强度也增加。如果介电材料在生产期间跌落则它可能破裂或***,因为不可能确保与介电材料的尺寸和重量相称的足够的机械强度。
为了解决这些问题,下面提到的专利文献1描述了一种以钛酸钡作为主要组分且包含Ca、Sr、Mg、Mn和稀土元素的介电瓷制品,并且其特征在于核-壳结构,在其中颗粒表面处的Ca浓度大于颗粒中心处的Ca浓度,并且Sr、Mg、Mn和稀土元素在颗粒表面处不均匀地分布。
此外,下面提到的专利文献2描述了一种介电瓷制品,其特征在于它包括在其中利用Zr来代替B位点的部分的钙钛矿钛酸钡晶粒(BTZ型晶粒)和在其中利用Sr来代替A位点的部分的钙钛矿钛酸铋钠晶粒(BNST型晶粒)二者,并且特征还在于核-壳结构,在所述核-壳结构中在BTZ型晶粒与BNST型晶粒之间的晶界相中存在Mg、Mn和至少一种稀土元素,并且BTZ型晶粒和BNST型晶粒二者的平均颗粒尺寸是0.3-1.0 µm。
然而,尽管包括BaTiO3作为主要组分且具有核-壳结构的介电瓷制品(诸如在专利文献1中描述的那个)具有在20℃下当不施加DC偏压时的2500或更大的相对高的介电常数值,但是当施加5V/µm的DC偏压时的介电常数的变化率或电容的变化率(DC偏压特性)是小于-70%的值,因此变化率是大的并且该值对于在高电压下使用的电容器而言不能够被视为是足够的。此外,没有提到机械强度。
同时,诸如在专利文献2中描述的那个的陶瓷组成的主要特征在于存在具有核-壳结构的BTZ型晶粒和BNST型晶粒二者的事实。此外,BTZ型晶粒和BNST型晶粒二者都形成具有核-壳结构,在所述核-壳结构中Mg、Mn和稀土金属中的至少一种在颗粒表面处比在颗粒的中心处更不均匀地分布,并且因此在20℃下当不施加DC偏压时的介电常数实现2750或更大的相对高的值,并且当施加3 V/µm的DC偏压时的DC偏压特性实现小于-20%的值,但是该值对于在高电压下(诸如在诸如机动车辆DC-DC转换器或AC-DC逆变器的平滑电容器或缓冲电容器中)使用而言不能够被视为是足够的。此外,没有提到机械强度。
现有技术文献
专利文献
【专利文献 1】 JP 2006-206362 A
【专利文献 2】 JP 2005-22891 A。
发明内容
待由本发明解决的问题
鉴于上面概述的情形,本发明的目的在于提供一种介电组成,该介电组成被有利地用在其中施加高电压的位置中,该介电组成具有当施加DC偏压时的极好的介电常数、极好的DC偏压特性,并且还具有极好的机械强度;并且还在于提供一种包括所述介电组成的介电元件、电子部件和层压电子部件。
用于解决该问题的措施
为了实现上面提到的目的,一种介电组成,为包含至少Bi、Na、Sr 和Ti的钙钛矿晶体结构,并且其特征在于:
所述介电组成包括从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的至少一种;
所述介电组成包括具有核-壳结构的特定颗粒,所述核-壳结构具有至少一个包括SrTiO3的核部分;并且
0.20 ≤ α ≤ 0.70,其中α是特定颗粒的数目相对于包含在介电组成中的颗粒的总数目的比。
通过设置0.20 ≤ α ≤ 0.70,其中α是特定颗粒的数目相对于包含在介电组成中的颗粒的总数目的比,可能改进当施加DC偏压时的介电常数,并且还改进DC偏压特性和机械强度。
此外,从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的所述至少一种的含量优选地在0.2和14.3摩尔份之间,把介电组成的Ti含量看作100摩尔份。这使得可能进一步改进当施加DC偏压时的介电常数以及DC偏压特性。
另外,优选地,0.92 ≤ β ≤ 3.00,其中β是介电组成中Sr相对于Na的摩尔比。这使得可能进一步改进当施加DC偏压时的介电常数、DC偏压特性以及机械强度。
根据本发明的介电元件设有上面提到的介电组成。
根据本发明的电子部件设有包括上面提到的介电组成的介电层。
根据本发明的层压电子部件具有通过使内部电极层和包括上面提到的介电组成的介电层交替地层压而形成的层压部分。
附图说明
图1是根据本发明的实施例的一个模式的陶瓷电容器的示意图;
图2是根据本发明的实施例的不同模式的层压陶瓷电容器的横截面中的视图;以及
图3是根据本发明的实施例的一个模式的介电组成中的颗粒的示意图。
具体实施方式
下面将参考附图描述本发明的实施例的优选模式。应该指出,本发明不限于实施例的以下模式。此外,下面描述的构成要素包括本领域技术人员能够容易地设想到的要素以及还有实质上相同的要素。另外,下面描述的构成要素可以酌情被组合。
图1是根据本发明的实施例的一个模式的单层陶瓷电容器的示意图。
如图1中所示,根据本发明的实施例的一个模式的单层陶瓷电容器100包括盘形介电体1和一对电极2、3。通过在介电体1的两个表面上形成电极2、3来获得单层陶瓷电容器100。关于介电体1和电极2、3的形状没有特别的限制。此外,关于其尺寸也没有特别的限制,并且应该根据应用来设置合适的尺寸。
该介电体1包括根据实施例的该模式的介电组成。关于电极2、3的材料没有特别的限制。例如,可以使用Ag、Au、Cu、Pt、Ni等等,但是也可以使用其他金属。
图2是根据本发明的实施例的不同模式的层压陶瓷电容器的示意性横截面图。
如图2中所示,根据本发明的实施例的不同模式的层压陶瓷电容器200包括电容器元件主体5,所述电容器元件主体5具有在其中介电层7和内部电极层6A、6B交替堆叠的结构。在元件主体5的两个端部处形成一对端电极11A、11B,它们分别与交替地布置在元件主体5内的内部电极层6A、6B进行传导。关于元件主体5的形状没有特别的限制,但是它通常是长方体形状。此外,关于其尺寸没有特别的限制,并且应该根据应用来设置合适的尺寸。
通过下述方式来提供内部电极层6A、6B:使得其平行。通过下述方式来形成内部电极层6A:其一个端部在层压体5的其中形成端电极11A的端部表面处暴露。此外,通过下述方式来形成内部电极层6B:其一个端部在层压体5的其中形成端电极11B的端部表面处暴露。此外,通过下述方式来设置内部电极层6A和内部电极层6B:其大部分在堆叠的方向上重叠。
关于内部电极层6A、6B的材料没有特别的限制。例如,可以使用诸如Au、Pt、Ag、Ag-Pd合金、Cu或Ni等的金属,但是也可能使用其他金属。
端电极11A、11B提供在层压体5的端部表面处与在所述端部表面处暴露的内部电极层6A、6B的端部接触。凭借该结构,端电极11A、11B分别被电气连接至内部电极层6A、6B。该端电极11A、11B可以包括以Ag、Au、Cu等等作为其主要组分的导电材料。关于端电极11A、11B的厚度没有特别的限制。除了其他许多东西之外,根据层压介电元件的尺寸和应用来适当地设置其厚度。例如,端电极11A、11B的厚度可以被设置在10-50 µm。
介电层7包括根据实施例的该模式的介电组成。每个介电层7的厚度可以被自由设置并且没有特别的限制。例如,厚度可以被设置在1-100 µm。
在这里,根据实施例的该模式的介电组成具有钙钛矿晶体结构,所述钙钛矿晶体结构包含至少Bi、Na、Sr和Ti,并且包括从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的至少一种(下面也成为“辅助组分”)。
具有钙钛矿晶体结构的介电组成是多晶材料,其作为主相包括由通式ABO3表示的钙钛矿化合物,其中A包括选自Bi、Na和Sr的至少一种,并且B包括至少Ti。
如果把A的全部看作100 at.%(原子百分数),则在A中包含的Bi、Na、Sr的比例优选地是总计至少80 at.%。此外,如果把B的全部看作100 at.%,则在B中包含的Ti的比例优选地是至少80 at.%。
图3是根据实施例的该模式的介电组成300中的颗粒的示意图。根据实施例的该模式的介电组成300包括不具有核-壳结构的单相颗粒20和具有核-壳结构的核-壳颗粒30。
此外,关于单相颗粒20和核-壳颗粒30的平均颗粒尺寸没有特别的限制。从改进烧结坯的稠度的观点出发,平均颗粒尺寸优选地在0.3 µm和3.0 µm之间。
晶界10存在于颗粒之间。核-壳颗粒包括包围核部分8的壳部分9,并且存在如下颗粒形式:在其中核部分8完全包含在壳部分9内,以及在其中核部分8的部分与晶界10接触而核部分8的另一部分包含在壳部分9内。
另外,根据实施例的该模式的介电组成300中的核-壳颗粒30中的大多数是具有核-壳结构的特定颗粒,所述核-壳结构具有包括SrTiO3的核部分。
包括SrTiO3的核部分具有SrTiO3晶体结构,并且包含至少40 at.%的Sr原子和Ti原子中的每一种,其中把包含在核部分中的金属原子的总数看作100 at.%。
此外,关于包括SrTiO3的核部分的尺寸或形状没有特别的限制。包括SrTiO3的核部分的直径优选地不大于包含在介电组成300中的颗粒的平均颗粒尺寸的一半。通过将包括SrTiO3的核部分的尺寸设置在上面提到的范围内,很可能同时改进介电常数和DC偏压特性。尽管SrTiO3趋于改进DC偏压特性和机械强度,但是它确实还趋于减小介电常数。
另外,包括SrTiO3的一个核部分通常存在于单个颗粒内,但是两个或更多核部分同样可以存在于单个颗粒内。
在这里,特定颗粒的壳部分9优选地包含至少Na、Bi和Ti。
下面将描述用于确定包含在根据实施例的该模式的介电组成300中的颗粒是否是特定颗粒的方法,以及用于计算特定颗粒的数目相对于包含在介电组成300中的颗粒的总数目的比α的方法。
关于用于区分所述颗粒是否是核-壳颗粒30的方法没有特别的限制。另外,关于用于确定核-壳颗粒30的核部分8是否包括SrTiO3的方法没有特别的限制。例如,可能通过以下来区分所述颗粒是单相颗粒20还是核-壳颗粒30:使在介电组成300的任何平面上切割的横截面经受扫描透射电子显微镜(STEM)和能量色散X射线谱(EDS),并且确认元素分布。另外,还可能确定核-壳颗粒30的核部分8是否包括SrTiO3。
关于用于设置STEM和EDS的观察场的方法没有特别的限制,但是观察场的尺寸优选地是至少2 µm × 至少2 µm,并且观察场的放大倍数优选地在10 000倍和100 000倍之间。
从观察场中选择能够被确认为完全被晶界10包围的多个颗粒,并且对这些之中具有包括SrTiO3的核部分的核-壳颗粒(特定颗粒)的数目进行计数。可能通过把特定颗粒的数目除以所选择的颗粒的数目来计算α的值。应该指出,选择至少20个颗粒,并且优选地选择至少100个颗粒。此外,可以通过设置多个观察场来增加选择的颗粒的数目。
应该指出,可以通过改变介电组成的构成以及用于产生介电组成的方法,以及而且通过改变当焙烧介电组成时的焙烧条件来酌情控制产生的核-壳颗粒30的量。例如,当使用具有大颗粒尺寸的起始材料粉末时,核-壳颗粒30趋于容易地产生。此外,当增加焙烧温度时,核-壳颗粒30趋于不太可能产生。
根据实施例的该模式的介电组成300同样可以包括不同于特定颗粒和单相颗粒20的颗粒,即,它可以包括不同于特定颗粒的核-壳颗粒。在这里,特定颗粒和单相颗粒20的总数目相对于包含在根据本发明的介电组成300中的颗粒的总数目的比优选地是80%或更大。
根据实施例的该模式,特定颗粒的数目相对于包含在介电组成300中的颗粒的总数目的比α满足0.20 ≤ α ≤ 0.70。
作为在根据实施例的该模式的介电组成300中设置0.20 ≤ α ≤ 0.70的结果,可能改进当施加DC偏压时的介电常数、DC偏压特性和机械强度。
另一方面,如果特定颗粒的数目相对于颗粒的总数目的比α不满足0.20 ≤ α ≤0.70,则存在当施加DC偏压时的介电常数和/或DC偏压特性和/或机械强度的恶化。
如果α ≥ 0.20则改进当施加DC偏压时的介电常数和DC偏压特性的原因是不清楚的,但是本发明人相信原因是如下那样。首先,SrTiO3在室温下是顺电的。顺电物的特征在于它们一般受DC偏压影响。其中核部分包括SrTiO3(其在室温下是顺电的)的核-壳颗粒以恒定比例存在,并且因此限制当施加DC偏压时核-壳颗粒中的介电常数的减小,并且因此改进介电体整体的DC偏压特性。
此外,如果α ≥ 0.20则改进机械强度的原因是不清楚的,但是本发明人相信原因是如下那样。首先,SrTiO3晶体一般地具有高机械强度的特征。其中核部分包括SrTiO3晶体(其具有高机械强度)的核-壳颗粒以恒定比例存在,并且因此改进核-壳颗粒的机械强度,并且因此改进介电体整体的机械强度。
应该指出,如果α > 0.70则当不施加DC偏压时的介电常数降低,并且还存在当施加DC偏压时的介电常数的同时减小。
根据实施例的该模式的介电组成300优选地使得α满足0.25 ≤ α ≤ 0.66。
根据实施例的该模式的介电组成300优选地使得0.92≤β≤3.00,其中β是介电组成中Sr相对于Na的摩尔比。当0.92 ≤ β ≤ 3.00时,进一步改进当施加DC偏压时的介电常数、DC偏压特性和机械强度。
此外,关于辅助组分的含量没有特别的限制,但是必须包括辅助组分。如果不包括辅助组分,则存在DC偏压特性和/或机械强度的恶化。
此外,当把介电组成的Ti含量看作100摩尔份时,辅助组分的含量优选地总计在0.2摩尔份与14.3摩尔份之间。通过将辅助组分的含量设置在这个范围内,可能进一步改进当施加DC偏压时的介电常数以及DC偏压特性。应该指出,辅助组分可以存在于颗粒和晶界中的任何位置处。
鉴于以上内容,根据实施例的该模式的介电组成总的来说具有当施加DC偏压时的极好的介电常数、极好的DC偏压特性和极好的机械强度。
接下来将描述用于产生图1中示出的陶瓷电容器100的方法的示例。
首先,可能使用形成介电组成的部分的金属元素的氧化物、或其混合物或复合氧化物作为介电体1的起始材料,但是也可以从作为焙烧的结果形成上面提到的氧化物或复合氧化物的各种类型的化合物(例如碳酸盐、草酸盐、硝酸盐、氢氧化物和有机金属化合物等)中适当地选择介电起始材料,并且可以对这些进行混合以供使用。
例如,除了其他许多东西之外,以下粉末可以被引用作为起始材料:氧化铋(Bi2O3)、碳酸钠(Na2CO3)、碳酸锶(SrCO3)、碳酸钡(BaCO3)、碳酸钙(CaCO3)、氢氧化镧(La(OH)3)、碳酸镁(MgCO3)、和二氧化钛(TiO2)。
此外,关于未经加工的起始材料粉末(下面称为“起始材料粉末”)的颗粒尺寸没有特别的限制,但是0.1 µm-1.0 µm的颗粒尺寸是优选的。此外,可以通过适当地改变混合起始材料所用的时间来调整起始材料的平均颗粒尺寸。
在这里,起始材料粉末的细度受α的大小影响。起始材料粉末的颗粒尺寸越小,α趋于越低。
通过下述方式来称出上面提到的起始材料粉末:使焙烧之后的介电组成(烧结坯)满足根据实施例的该模式的介电组成的构成。
然后使用球磨机等等来湿法混合所称量的起始材料粉末。然后煅烧通过湿法混合获得的混合物以产生煅烧材料。在这里,在正常空气下实施煅烧。此外,煅烧温度优选地是700-900℃,并且煅烧时间优选地是1-10小时。
然后使用球磨机等等来湿法研磨结果得到的煅烧材料,在这之后烘干它以获得煅烧粉末。然后将粘合剂添加到结果得到的煅烧粉末,并且对所述材料进行压模以获得模制制品。关于能够使用的粘合剂没有特别的限制,只要它是本技术领域中常规使用的粘合剂。可以将聚乙烯醇(PVA)等等引用作为粘合剂的特定示例。关于添加的粘合剂的量没有特别的限制,但是当把煅烧粉末看作100 wt%时优选地添加1-5 wt%的量。关于压模期间的模制压强没有特别的限制,但是约为300 MPa的压强是优选的。关于模制制品的形状没有特别的限制。在实施例的该模式中采用盘形形状,但是方形板形状或其他形状同样是可行的。
通过焙烧结果得到的模制制品获得介电体1。通常在空气下实施焙烧。此外,焙烧温度优选地是950-1400℃,并且焙烧时间优选地是2-10小时。
在这里,可能通过适当地选择焙烧条件来改变α的值。焙烧温度越高,α的值趋于越低。此外,焙烧时间越长,α的值趋于越低。
然后在结果得到的介电体1的两个表面上形成电极2、3。关于电极的材料没有特别的限制,并且可以使用Ag、Au、Cu、Pt、Ni等等。用于形成电极的方法涉及气相沉积、溅射、印刷、化学镀敷等等,但是可以使用不同于这些的方法,并且关于用于形成电极的方法没有特别的限制。在图1中示出的陶瓷电容器100可以通过上面描述的方法来产生。
此外,可以通过用于产生层压陶瓷电容器的常规方法来产生图2中示出的层压陶瓷电容器200。
上面已经给出了根据实施例的该模式的单层陶瓷电容器100和层压陶瓷电容器200的描述。根据实施例的该模式的介电组成具有当施加高DC偏压时的高介电常数、并且还具有极好的DC偏压特性和机械强度。例如,因此能够将介电组成有利地使用在具有相对高的额定电压的中等电压和高电压电容器中。
能够将根据本发明的介电元件、电子部件和层压电子部件有利地用在其中施加相对高的额定电压的位置中。例如,可以将它们有利地用在其中当施加高DC偏压时需要高介电常数的位置中,那就是说用在其中施加高电压的位置中,诸如用于电路保护的缓冲电容器、平滑电容器、DC-DC转换器或AC-DC逆变器。
此外,根据本发明的介电组成不包含铅。因此从环境观点来看,发明的介电组成、介电元件、电子部件和层压电子部件也是优越的。
示例性实施例
下面将在示例性实施例和比较示例的帮助下进一步详细描述本发明。然而,本发明不受下面的示例性实施例限制。应该指出,根据本发明,施加于介电组成、介电元件、电子部件和层压电子部件上的DC(直流电)场被称为DC偏压。此外,电容在施加DC偏压之前和之后的变化率被称为DC偏压特性。电容的变化率越小,DC偏压特性越好。
(示例性实施例1-23和比较示例1-10)
制备以下材料的起始材料粉末:氧化铋(Bi2O3)、碳酸钠(Na2CO3)、碳酸锶(SrCO3)、碳酸钡(BaCO3)、碳酸钙(CaCO3)、碳酸镁(MgCO3)、氧化锌(ZnO)、氢氧化镧(La(OH)3)、氧化钕(Nd2O3)、氧化钐(Sm2O3)、氧化钆(Gd2O3)和氧化钛(TiO2)。在这里,在0.1-1.0µm的范围内适当地调整起始材料粉末的平均颗粒尺寸,并且介电组成样品中的α具有表1中示出的值。
通过如下方式称出上面提到的起始材料粉末:焙烧介电组成包含Sr、Na、Bi和Ti,Sr相对于Na的摩尔比β具有表1中示出的值,在其中包含具有表1中示出的类型和量的辅助组分,并且焙烧介电组成具有钙钛矿晶体结构。
借助于球磨机来湿法混合所称量的起始材料粉末以获得混合物。在850℃的空气下对结果得到的混合物进行煅烧达2小时以获得煅烧材料。然后使用球磨机来湿法研磨煅烧材料以获得煅烧粉末。然后添加相对于100 wt%的煅烧粉末为1 wt%的聚乙烯醇(PVA)。然后在大约196-490 MPa的压强下对PVA已经添加到的煅烧粉末进行模制,并且获得具有20mm左右的平面长度尺寸、20 mm左右的宽度以及1 mm左右的厚度的方形板状模制制品。
然后对方形板状模制制品进行焙烧以获得介电组成样品。该焙烧期间的焙烧条件如下:在空气下执行焙烧,在950-1400℃的范围内适当地调整焙烧温度,并且在2-10小时的范围内适当地调整焙烧时间,介电组成样品中的α具有表1中示出的值,并且介电组成样品的相对密度为95%或更大。
当测量介电组成样品的密度时,发现所有示例性实施例和比较示例中的介电组成样品的密度都是相对于理论密度的95%或更大。那就是说,所有示例性实施例和比较示例中的所有介电组成样品的相对密度是95%或更大。
借助于X射线荧光分析来分析介电组成样品的构成。确认因此,辅助组分的含量是表1中示出的值,把每个样品中的Ti的含量和β看作100摩尔份。
借助于抛光将介电组成样品形成为薄片材,并且最后借助于镓离子束将观察位置切割成薄片。然后借助于扫描透射电子显微镜(STEM)观察所述观察位置。另外,在相同的观察场中执行能量色散X射线谱(EDS),并且确认元素分布。STEM和EDS中的观察场的尺寸是5µm × 5 µm并且观察场的放大倍数是40 000倍。此外,设置多个观察场。
从所述多个观察场中选择能够确认为完全被晶界包围的100个颗粒。对在这些之中具有至少一个包括SrTiO3的核部分的核-壳颗粒(特定颗粒)的数目进行计数,借助于下面的公式(1)来计算特定颗粒的比α,并且确认每个样品的α的值是表1中的值:
α=(特定颗粒的数目)/100...(公式1)。
使用双面研磨机和划切锯来对介电组成样品进行加工,并且获得具有6 mm的长度、6 mm的宽度和0.2 mm的厚度的经加工的样品。
在结果得到的经加工的样品的两个表面上气相沉积Ag电极以产生用于评估的样品。测量用于评估的样品的介电常数ε1和介电常数ε2。进一步从ε1和ε2计算DC偏压特性。
使用数字LCR仪表(Hewlett-Packard;4284A),根据从25℃的室温、1kHz的频率以及1.0 Vrms的输入信号电平(测量电压)的条件测得的电容来计算的介电常数ε1(没有单位)。
在将DC偏压发生器(GLASSMAN高电压;WX10P90)连接至数字LCR仪表(Hewlett-Packard;4284A)并且向用于评估的样品上施加5 V/µm的DC偏压的同时,根据从25℃的室温、1kHz的频率、和1.0 Vrms的输入信号电平(测量电压)的条件测得的电容、面对的电极的表面积和层间距离来计算介电常数ε2(没有单位)。在本示例性实施例中,对于介电常数ε2,1300或更大的值被认为是好的。
使用下面的公式(2)从介电常数ε1和介电常数ε2计算DC偏压特性。在示例性实施例中,±20%之内的DC偏压被认为是好的:
DC偏压特性(%)=100 × (ε2-ε1)/ε1 公式(2)。
此外,使用双面研磨机和划切锯将上面提到的介电组成样品加工成长度为7.2mm、宽度为 2.5 mm并且厚度为0.32 mm,由此产生用于横向断裂强度测量的样品。针对每个示例性实施例(比较示例)产生20个用于横向断裂强度测量的样品。
从用于横向断裂强度测量的样品计算横向断裂强度。
具体地,测量当用于横向断裂强度测量的样品通过三点弯曲而被破坏时的最大负荷,所述三点弯曲借助于由INSTRON生产的机器型号5543来进行,其中支持点之间的距离为5 mm。针对每个示例性实施例(比较示例)测量20次最大负荷,并且从测量结果计算横向断裂强度。在本示例性实施例中180 Mpa或更大的横向断裂强度被认为是好的。
从表1能够看到,根据示例性实施例1-23的介电组成,其中特定颗粒的比α满足0.20 ≤ α ≤ 0.70,展现1300或更大的介电常数ε2、±20%之内的DC偏压特性以及180 MPa或更大的横向断裂强度。
此外,根据示例性实施例1-6和8-23的介电组成,其中辅助组分含量在0.2摩尔份和14.3摩尔份之间(把介电组成的Ti含量看作100摩尔份)并且其中β ≤ 3.00,展现1500或更大的介电常数ε2、±15%之内的DC偏压特性、和180 MPa或更大的横向断裂强度。
应该指出,示例性实施例7中的介电常数ε1、ε2,其中辅助组分含量在0.2摩尔份和14.3摩尔份之间(把介电组成的Ti含量看作100摩尔份)但是β > 3.00,低于示例性实施例1-6和8-23中的介电常数ε1、ε2,并且ε2小于1500。
另外,根据示例性实施例2-6和8-23的介电组成,其中相对于1摩尔份的介电组成而言辅助组分含量在0.2摩尔份和14.3摩尔份之间,并且其中Sr相对于Na的摩尔比β满足0.92 ≤ β ≤ 3.00,展现当施加5 kV/mm的DC偏压时的1500或更大的介电常数ε2,±15%之内的DC偏压特性以及200 MPa或更大的横向断裂强度。
与此形成对比,根据比较示例1-10的介电组成,其中特定颗粒的比α不满足0.20≤ α ≤ 0.70,展现使得介电常数ε2、DC偏压特性以及横向断裂强度中的至少一个是不利的结果。
关键符号
1...介电体
2、3...电极
5...层压体
6A、6B...内部电极层
7...介电层
11A、11B...端电极
8...核
9...壳
10...晶界
20...单相颗粒
30...核-壳颗粒
100...陶瓷电容器
200...层压陶瓷电容器
300...介电组成。
Claims (13)
1.具有钙钛矿晶体结构并至少包含Bi、Na、Sr和Ti的介电组成,其特征在于:
所述介电组成包括从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的至少一种;
所述介电组成包括不具有核-壳结构的单相颗粒和特定颗粒,所述特定颗粒具有核-壳结构,所述核-壳结构具有至少一个包括SrTiO3的核部分;并且
0.20 ≤ α ≤ 0.70,其中α是特定颗粒的数目相对于包含在所述介电组成中的颗粒的总数目的比。
2.根据权利要求1所述的介电组成,其中从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的所述至少一种的含量在0.2和14.3摩尔份之间,把所述介电组成的Ti含量看作100摩尔份。
3.根据权利要求1或2所述的介电组成,其中,0.92 ≤ β ≤ 3.00,其中β是所述介电组成中Sr相对于Na的摩尔比。
4.介电元件,设有根据权利要求1至3中任一项所述的介电组成。
5.电子部件,设有包括根据权利要求1至3中任一项所述的介电组成的介电层。
6.层压电子部件,具有通过使内部电极层和包括根据权利要求1至3中任一项所述的介电组成的介电层交替地层压而形成的层压部分。
7.单层陶瓷电容器,包括盘形介电体和一对电极,该盘形介电体包括根据权利要求1至5中任一项所述的介电组成,其中所述电极形成在该介电体的两个表面上。
8.根据权利要求7所述的单层陶瓷电容器,其中,电极的材料包括Cu。
9.层压陶瓷电容器,包括根据权利要求6所述的层压电子部件,其中,内部电极层以使得其端部表面在该层压电子部件的两个相对端部的表面处交替地暴露这样的方式而堆叠。
10.根据权利要求9所述的层压陶瓷电容器,其中,所述内部电极层包括Cu或Cu合金。
11.根据权利要求9或10所述的层压陶瓷电容器,其中,在该层压电子部件的两个端部处形成一对端电极,并且该对端电极连接到所述内部电极层的暴露的端部表面。
12.根据权利要求11所述的层压陶瓷电容器,其中,所述端电极包括Cu。
13.用于提供介电组成的工艺,所述工艺包括以下步骤:
-- 提供氧化铋(Bi2O3)、碳酸钠(Na2CO3)、碳酸锶(SrCO3)、碳酸钡(BaCO3)、碳酸钙(CaCO3)、氢氧化镧(La(OH)3)、碳酸镁(MgCO3)和二氧化钛(TiO2)的起始材料粉末,其中,以使得焙烧的介电组成具有包含至少Bi、Na、Sr和Ti的钙钛矿晶体结构这样的方式来称出起始材料,其特征在于:
所述介电组成包括从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Yb、Ba、Ca、Mg和Zn之中选择的至少一种;
所述介电组成包括具有核-壳结构的特定颗粒,所述核-壳结构具有至少一个包括SrTiO3的核部分;并且
0.20 ≤ α ≤ 0.70,其中α是特定颗粒的数目相对于包含在所述介电组成中的颗粒的总数目的比;
-- 湿法混合所称量的起始材料粉末,
-- 通过煅烧通过湿法混合获得的混合物来获得煅烧的粉末,
-- 将粘合剂添加到结果得到的煅烧的粉末,
-- 对浆料进行模制,以及
-- 焙烧结果得到的模制制品。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001015374A (ja) * | 1999-06-30 | 2001-01-19 | Murata Mfg Co Ltd | 積層セラミックコンデンサ及びその製造方法 |
CN1331476A (zh) * | 2000-06-30 | 2002-01-16 | 太阳诱电株式会社 | 电介质陶瓷组合物和陶瓷电容器 |
JP2005022891A (ja) * | 2003-06-30 | 2005-01-27 | Kyocera Corp | 誘電体磁器および積層型電子部品 |
CN1837058A (zh) * | 2005-03-22 | 2006-09-27 | Tdk株式会社 | 粉末的制造方法、该粉末以及使用该粉末的多层陶瓷电容器 |
CN103700497A (zh) * | 2012-09-27 | 2014-04-02 | 太阳诱电株式会社 | 层叠陶瓷电容器及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002080276A (ja) * | 2000-06-30 | 2002-03-19 | Taiyo Yuden Co Ltd | 誘電体磁器組成物及び磁器コンデンサ |
JP2006206362A (ja) | 2005-01-27 | 2006-08-10 | Kyocera Corp | 誘電体磁器及びこれを用いた積層セラミックコンデンサ |
JP2009096671A (ja) | 2007-10-17 | 2009-05-07 | Taiyo Yuden Co Ltd | 誘電体セラミックス及び積層セラミックコンデンサ |
JP6102410B2 (ja) * | 2013-03-28 | 2017-03-29 | Tdk株式会社 | 誘電体磁器組成物、および誘電体素子 |
JP6591656B2 (ja) * | 2015-07-17 | 2019-10-16 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | 誘電体組成物、誘電体素子、電子部品および積層電子部品 |
KR102099026B1 (ko) * | 2015-07-17 | 2020-04-08 | 티디케이 일렉트로닉스 아게 | 유전체 조성물, 유전체 소자, 전자 부품 및 적층 전자 부품 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001015374A (ja) * | 1999-06-30 | 2001-01-19 | Murata Mfg Co Ltd | 積層セラミックコンデンサ及びその製造方法 |
CN1331476A (zh) * | 2000-06-30 | 2002-01-16 | 太阳诱电株式会社 | 电介质陶瓷组合物和陶瓷电容器 |
JP2005022891A (ja) * | 2003-06-30 | 2005-01-27 | Kyocera Corp | 誘電体磁器および積層型電子部品 |
CN1837058A (zh) * | 2005-03-22 | 2006-09-27 | Tdk株式会社 | 粉末的制造方法、该粉末以及使用该粉末的多层陶瓷电容器 |
CN103700497A (zh) * | 2012-09-27 | 2014-04-02 | 太阳诱电株式会社 | 层叠陶瓷电容器及其制造方法 |
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