CN107818931B - 半导体微元件的转移方法及转移装置 - Google Patents
半导体微元件的转移方法及转移装置 Download PDFInfo
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Abstract
本发明公开了半导体微元件的转移方法及转移装置,在基板上设置有键合层,键合层与半导体微元件相连接,连接的键合层部分具有柱状支撑结构,键合层柱状支撑结构的中间有用于吹气的通孔,通孔靠近半导体微元件的一端为电极或非电极区域,键合层材料为高聚物。
Description
技术领域
本发明涉及用于显示的半导体微元件,更具体地,涉及一种用于半导体微元件的转移方法、一种半导体微元件装置以及一种包含半导体微元件装置的电子设备。
背景技术
半导体微元件技术是指在衬底上以高密度集成的微小尺寸的元件阵列。目前,半导体微元件中的一个重要代表微型发光二极管(Micro LED)技术已经成为研究热门,工业界亟待半导体微元件微型发光二极管产品能够迅速进入市场。未来微型发光二极管制作的显示屏产品可以实现超高分辨率,未来必将取代市场上已有的诸如LCD/OLED的传统显示屏产品。
在制造半导体微元件的过程中,首先在转移基板上形成半导体微元件,接着将半导体微元件转移到接收基板上。接收基板例如是显示屏。在制造半导体微元件过程中的一个困难在于:如何大量地将半导体微元件从施体基板上转移到接收基板上。衡量此技术最重要的指标就是转移良率。
传统转移半导体微元件的方法为借由基板键合(Wafer Bonding)将半导体微元件自转移基板转移至接收基板。转移方法的其中一种实施方法为直接转移,即直接将半导体微元件阵列自转移基板键合至接收基板,之后再将转移基板移除。另一种实施方法为间接转移。此方法包含两次接合/ 剥离的步骤,首先,转移基板自施体基板提取半导体微元件阵列,接着转移基板再将半导体微元件阵列键合至接收基板,最后再把转移基板移除。
衡量转移半导体微元件技术的重要指标就是转移良率,一般需求为100%。由于MLED尺寸在微米级别(<100um),芯粒之间的微小差异就会导致芯粒在用转移胶带转移时所需要的粘附力量不同,导致转移良率小于100%。所以,提高转移良率是目前MLED的一个技术难点。
发明内容
针对上述问题,本发明提出了一种半导体微元件的转移方法。
根据本发明的第一个方面,一种半导体微元件的转移方法,所述半导体微元件的转移方法包含步骤:
(1)在基板上设置键合层,键合层具有支撑结构;
(2)半导体微元件通过支撑结构与键合层相连接;
键合层的支撑结构中具有通孔,在移除半导体微元件时,从通孔向半导体微元件施加推力,让半导体微元件与键合层分离。
优选地,所述半导体微元件的数量为多个,其中步骤(2)仅向部分所述半导体微元件施加推力,以分离所需的半导体微元件。
优选地,所述通孔通过向半导体微元件注入流体,以产生所述推力。
优选地,所述通孔的孔径为1μm ~10μm。
优选地,所述支撑结构靠近半导体微元件一端的通孔孔径小于远离半导体微元件一端的通孔孔径。
优选地,所述支撑结构靠近半导体微元件一端的通孔孔径为1μm ~6μm。
优选地,所述键合层的材料为高分子材料。
优选地,所述键合层的材料包括BCB胶(Benzo Cyclo Butene,苯并环丁烯)、硅胶、聚酯树脂、聚亚胺酯或聚酰亚胺或人造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基丙烯酸甲酯或多壁碳纳米管或前述任意组合。
优选地,所述半导体微元件表面具有绝缘层,所述半导体微元件上的绝缘层与支撑结构键合。
优选地,所述半导体微元件上的绝缘层与支撑结构键合的位置上设置有凹坑。
根据本发明的第二个方面,提供了通过通孔吸力吸附半导体微元件的转移方法,一种半导体微元件的转移方法,所述半导体微元件的转移方法包含步骤:
(1)在基板上设置键合层,键合层具有支撑结构;
(2)键合层通过支撑结构与半导体微元件相连接;
键合层的支撑结构中具有通孔,在支撑结构连接半导体微元件时,从通孔向半导体微元件施加吸力,让半导体微元件吸附在键合层上,减少半导体微元件脱落的风险。
优选地,所述半导体微元件的数量为多个,其中步骤(2)仅将部分所述半导体微元件吸附,以释放所需指定的半导体微元件。
根据本发明的第三个方面,提供了一种半导体微元件的转移装置,具有基板和设置在基板上的键合层,键合层设置有支撑结构,键合层通过支撑结构与半导体微元件相连接,所述支撑结构具有通孔。
优选地,所述键合层采用高分子材料。
优选地,所述键合层的材料包括BCB胶(Benzo Cyclo Butene,苯并环丁烯)、硅胶、聚酯树脂、聚亚胺酯或聚酰亚胺或人造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基丙烯酸甲酯或多壁碳纳米管或前述任意组合。
优选地,所述通孔的孔径为1μm ~10μm。
优选地,所述支撑结构靠近半导体微元件一端的通孔孔径小于远离半导体微元件一端的通孔孔径。
优选地,所述支撑结构靠近半导体微元件一端的通孔孔径为1μm ~6μm。
优选地,与半导体微元件连接的通孔另一端与流体装置相连接,流体装置具有选择注入流体或者在通孔产生真空吸力的功能。
优选地,所述通孔数量为多个,流体装置具有仅向部分通孔通入流体或者仅在部分通孔产生真空吸力的功能。
另外,本领域技术人员应当理解,尽管现有技术中存在许多问题,但是,本发明的每个实施例或权利要求的技术方案可以仅在一个或几个方面进行改进,而不必同时解决现有技术中或者背景技术中列出的全部技术问题。本领域技术人员应当理解,对于一个权利要求中没有提到的内容不应当作为对于该权利要求的限制。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1~图6为实施例1的结构示意图;
图7为实施例2的结构示意图;
图8~图9为实施例5的结构示意图;
图中标示: 100、衬底,110、第一半导体层,111、第一电极,120、活性层,130、第二半导体层,131、第二电极,140、绝缘层,141、凹坑,200、牺牲层,210、孔洞,220、二氧化硅柱体,300、键合层,301、支撑结构,310、基板,320、通孔。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到:除非另外具体说明,否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的,决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论,但在适当情况下,所述技术、方法和设备应当被视为说明书的一部分。
实施例1
一种半导体微元件的转移方法,所述半导体微元件的转移方法包含步骤:
(1)提供一半导体微元件,半导体微元件依次包括衬底100、第一半导体层110、活性层120、第二半导体层130、第一电极111和第二电极131;
(2)参看图1,在半导体微元件表面覆盖一层牺牲层200,牺牲层200材料包括TiW、Al、Ni或其任意组合,牺牲层200具有孔洞210,孔洞210贯穿到半导体微元件表面;
(3)参看图2,在牺牲层200的孔洞210内制作二氧化硅柱体220,二氧化硅柱体220的直径为1μm ~10μm;
(4)参看图3,准备一转移基板,转移基板至少由键合层300和基板310组成,键合层300材料包括BCB胶(Benzo Cyclo Butene,苯并环丁烯)、硅胶、聚酯树脂、聚亚胺酯或聚酰亚胺或人造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基丙烯酸甲酯或多壁碳纳米管或前述任意组合,参看图4,将基板310的键合层300一面与半导体微元件的牺牲层200一面相向键合,键合过程中,键合层300进入孔洞210包裹二氧化硅柱体220,形成支撑结构301,二氧化硅柱体220穿过键合层300与基板310连接;
(5)参看图5,通过湿法蚀刻消除牺牲层200,利用双面光学定位***从基板310背离半导体微元件的背面通过激光打孔贯穿基板310并打掉二氧化硅柱体220,将通孔320从基板310背面贯穿到半导体微元件表面;
(6)参看图6,在需要选择性移除部分半导体微元件时,从通孔320向半导体微元件施加推力,让半导体微元件与键合层300分离,产生推力的方法包括注入流体,例如惰性气体或者液体,气体流量为5g/mm2~15g/ mm2;
(7)用常规转移设备转移与键合层300分离的半导体微元件,转移设备例如为吸嘴。
实施例2
参看图7,本实施跟实施例1区别在于,步骤(6)中同时向部分不需要移除的半导体微元件施加真空吸力,避免振动或者其他原因导致不需要移除的半导体微元件。
实施例3
根据本发明的技术方案的基板,适用于对半导体微元件进行多次基板转移,提供一种微元件的转移方法,包括步骤:
(1)提供多颗半导体微元件和一转移基板,转移基板具有基板310和设置在基板310上的键合层300,基板310厚度为50μm ~100μm,基板310材料为蓝宝石或者Si或者金属。键合层300设置有支撑结构301,键合层300通过支撑结构301与半导体微元件相连接,所述支撑结构301具有通孔320;
(2)利用常规转移设备将半导体微元件吸取到转移基板上,半导体微元件与转移装置的支撑结构301相连接,转移装置通过支撑结构301的通孔320对半导体微元件选择性吸真空或者吹气。保留指定的半导体微元件;
(3)将在转移装置上保留下来的半导体微元件,粘附到另一目标基板上,从基板310的通孔320对半导体微元件吹气,键合层300与半导体微元件分离,从而高可靠性地完成半导体微元件的转移,实现半导体微元件的翻转。
实施例4
本实施例在实施例1~实施例3的方案基础上进行补充说明,为避免在半导体微元件转移过程中其上的电极脱落,转移半导体微元件时,将支撑结构301与半导体微元件上的绝缘层140相连接,绝缘层140在半导体微元件上起到诸如防止短路、损坏等保护作用。
实施例5
当支撑结构301为管状结构时,在支撑结构301与半导体微元件分离时,容易出现支撑结构301断裂,部分支撑结构301残留在绝缘层140表面,为了解决这个技术问题,参看图8,本实施例跟实施例4的区别在于,所述支撑结构301靠近半导体微元件一端的通孔孔径小于远离半导体微元件一端的通孔320孔径,降低支撑结构301对绝缘层140的接触面积和吸附力,形成更容易分离的形状,降低支撑结构301断裂的概率。
进一步提出一种技术方案,参看图9,在半导体微元件上的绝缘层140与支撑结构301键合的对应位置上设置凹坑141,凹坑141保证即使支撑结构301断裂,残留部分也将在凹坑141内,避免对半导体微元件的后续工艺造成影响。
实施例6
本实施例主要对转移装置进行改进,提供一种半导体微元件的转移装置,具有基板310和设置在基板310上的键合层300,键合层300设置有支撑结构301,所述键合层300采用高分子材料,键合层300通过支撑结构301与半导体微元件相连接。
支撑结构301具有通孔320,通孔320的孔径为1μm ~10μm,所述支撑结构301靠近半导体微元件一端的通孔320孔径小于远离半导体微元件一端的通孔320孔径,所述支撑结构301靠近半导体微元件一端的通孔320孔径为1μm ~6μm。
与半导体微元件连接的通孔320另一端与流体装置相连接,流体装置具有选择注入流体或者在通孔320产生真空吸力的功能,所述通孔320数量为多个,流体装置具有仅向部分通孔320通入流体或者仅在部分通孔320产生真空吸力的功能。
尽管已经描述本发明的示例性实施例,但是理解的是,本发明不应限于这些示例性实施例而是本领域的技术人员能够在如下文的权利要求所要求的本发明的精神和范围内进行各种变化和修改。
Claims (20)
1.一种半导体微元件的转移方法,所述半导体微元件的转移方法包含步骤:
(1)提供转移基板,在转移基板上形成半导体微元件,半导体微元件具有电极,转移基板包括基板和键合层,键合层设置在基板上,键合层具有支撑结构;
(2)半导体微元件通过支撑结构与键合层键合连接;
其特征在于:电极位于半导体微元件靠近支撑结构的一侧,键合层的支撑结构中具有通孔,在移除半导体微元件时,从通孔向半导体微元件施加推力,让半导体微元件与键合层分离。
2.根据权利要求1所述的一种半导体微元件的转移方法,其特征在于:所述半导体微元件的数量为多个,其中步骤(2)仅向部分所述半导体微元件施加推力,以分离所需的半导体微元件。
3.根据权利要求1所述的一种半导体微元件的转移方法,其特征在于:所述通孔通过向半导体微元件注入流体,以产生所述推力。
4.一种半导体微元件的转移方法,所述半导体微元件的转移方法包含步骤:
(1)提供转移基板,在转移基板上形成半导体微元件,半导体微元件具有电极,转移基板包括基板和键合层,键合层设置在基板上,键合层具有支撑结构;
(2)键合层通过支撑结构与半导体微元件键合连接;
其特征在于:电极位于半导体微元件靠近支撑结构的一侧,键合层的支撑结构中具有通孔,在支撑结构连接半导体微元件时,从通孔向半导体微元件施加吸力,让半导体微元件吸附在键合层上。
5.根据权利要求4所述的一种半导体微元件的转移方法,其特征在于:所述半导体微元件的数量为多个,其中步骤(2)仅将部分所述半导体微元件吸附,释放指定的部分半导体微元件。
6.根据权利要求1或4所述的一种半导体微元件的转移方法,其特征在于:所述通孔的孔径为1μm ~10μm。
7.根据权利要求1或4所述的一种半导体微元件的转移方法,其特征在于:所述支撑结构靠近半导体微元件一端的通孔孔径小于远离半导体微元件一端的通孔孔径。
8.根据权利要求1或4所述的一种半导体微元件的转移方法,其特征在于:所述支撑结构靠近半导体微元件一端的通孔孔径为1μm ~6μm。
9.根据权利要求1或4所述的一种半导体微元件的转移方法,其特征在于:所述键合层的材料为高分子材料。
10.根据权利要求1或4所述的一种半导体微元件的转移方法,其特征在于:所述键合层的材料包括BCB胶(Benzo Cyclo Butene,苯并环丁烯)、硅胶、聚酯树脂、聚亚胺酯或聚酰亚胺或人造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基丙烯酸甲酯或多壁碳纳米管或前述任意组合。
11.根据权利要求1或4所述的一种半导体微元件的转移方法,其特征在于:所述半导体微元件表面具有绝缘层,所述半导体微元件上的绝缘层与支撑结构键合。
12.根据权利要求11所述的一种半导体微元件的转移方法,其特征在于:所述半导体微元件上的绝缘层与支撑结构键合的位置上设置有凹坑。
13.一种半导体微元件的转移装置,具有转移基板,在转移基板上形成半导体微元件,半导体微元件具有电极,转移基板包括基板和键合层,键合层设置在基板上,键合层设置有支撑结构,键合层通过支撑结构与半导体微元件键合连接,其特征在于:电极位于半导体微元件靠近支撑结构的一侧,所述支撑结构具有通孔。
14.根据权利要求13所述的一种半导体微元件的转移装置,其特征在于:所述键合层采用高分子材料。
15.根据权利要求13所述的一种半导体微元件的转移装置,其特征在于:所述键合层的材料包括BCB胶、硅胶、聚酯树脂、聚亚胺酯或聚酰亚胺或人造橡胶或环氧树脂或聚二甲基硅氧烷或聚氨酯与对苯二甲酸乙二酯或聚甲基丙烯酸甲酯或多壁碳纳米管或前述任意组合。
16.根据权利要求13所述的一种半导体微元件的转移装置,其特征在于:所述通孔的孔径为1μm ~10μm。
17.根据权利要求13所述的一种半导体微元件的转移装置,其特征在于:所述支撑结构靠近半导体微元件一端的通孔孔径小于远离半导体微元件一端的通孔孔径。
18.根据权利要求13所述的一种半导体微元件的转移装置,其特征在于:所述支撑结构靠近半导体微元件一端的通孔孔径为1μm ~6μm。
19.根据权利要求13所述的一种半导体微元件的转移装置,其特征在于:与半导体微元件连接的通孔另一端与流体装置相连接,流体装置具有选择注入流体或者在通孔产生真空吸力的功能。
20.根据权利要求19所述的一种半导体微元件的转移装置,其特征在于:所述通孔数量为多个,流体装置具有仅向部分通孔通入流体或者仅在部分通孔产生真空吸力的功能。
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TWI673888B (zh) * | 2019-02-25 | 2019-10-01 | 友達光電股份有限公司 | 發光元件的製作方法 |
JP7154371B2 (ja) * | 2019-03-25 | 2022-10-17 | 廈門市三安光電科技有限公司 | マイクロ発光デバイス、マイクロ発光ダイオード及びマイクロ発光ダイオードの転写方法 |
CN112017988B (zh) * | 2019-05-31 | 2024-03-19 | 成都辰显光电有限公司 | 转移设备 |
CN114664982A (zh) * | 2019-06-24 | 2022-06-24 | 天津三安光电有限公司 | 一种制造适于转移的半导体发光元件结构的方法 |
CN110416139B (zh) | 2019-09-11 | 2021-08-31 | 京东方科技集团股份有限公司 | 一种转移载板、其制作方法及发光二极管芯片的转移方法 |
CN114078994B (zh) * | 2020-08-11 | 2023-05-12 | 重庆康佳光电技术研究院有限公司 | 微型led芯片转移方法及显示背板 |
TW202234597A (zh) * | 2021-02-22 | 2022-09-01 | 加拿大商弗瑞爾公司 | 卡匣干擾 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106229287A (zh) * | 2016-09-30 | 2016-12-14 | 厦门市三安光电科技有限公司 | 用于转移微元件的转置头及微元件的转移方法 |
CN106328576A (zh) * | 2016-09-30 | 2017-01-11 | 厦门市三安光电科技有限公司 | 用于微元件转移的转置头的制作方法 |
CN106449498A (zh) * | 2016-09-30 | 2017-02-22 | 厦门市三安光电科技有限公司 | 用于转移微元件的转置头及微元件的转移方法 |
CN107039298A (zh) * | 2016-11-04 | 2017-08-11 | 厦门市三安光电科技有限公司 | 微元件的转移装置、转移方法、制造方法、装置和电子设备 |
CN107068693A (zh) * | 2017-02-20 | 2017-08-18 | 友达光电股份有限公司 | 电子组件及其制造方法、转置元件及微元件的转置方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
DE102007043877A1 (de) * | 2007-06-29 | 2009-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement |
TW200947641A (en) * | 2008-05-15 | 2009-11-16 | Gio Optoelectronics Corp | Die bonding apparatus |
TWI422075B (zh) * | 2009-03-13 | 2014-01-01 | Advanced Optoelectronic Tech | 覆晶式半導體光電元件之結構及其製造方法 |
EP2359886A1 (en) * | 2010-02-12 | 2011-08-24 | Debiotech S.A. | Micromechanic passive flow regulator |
US9217541B2 (en) * | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
US9780270B2 (en) * | 2013-06-04 | 2017-10-03 | Nthdegree Technologies Worldwide Inc. | Molded LED light sheet |
KR102199991B1 (ko) * | 2014-05-28 | 2021-01-11 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 라이트 유닛 |
JP6271380B2 (ja) * | 2014-09-12 | 2018-01-31 | アルパッド株式会社 | 半導体装置の製造装置と半導体装置の製造方法 |
US10700120B2 (en) * | 2015-01-23 | 2020-06-30 | Vuereal Inc. | Micro device integration into system substrate |
US9640715B2 (en) * | 2015-05-15 | 2017-05-02 | X-Celeprint Limited | Printable inorganic semiconductor structures |
WO2018058748A1 (zh) * | 2016-09-30 | 2018-04-05 | 厦门市三安光电科技有限公司 | 用于微元件的转移的转置头及微元件的转移方法 |
CN107818931B (zh) * | 2017-09-30 | 2021-10-19 | 厦门市三安光电科技有限公司 | 半导体微元件的转移方法及转移装置 |
-
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- 2017-09-30 CN CN201710918727.1A patent/CN107818931B/zh active Active
-
2018
- 2018-04-28 WO PCT/CN2018/085127 patent/WO2019062117A1/zh active Application Filing
-
2020
- 2020-03-26 US US16/830,938 patent/US20200227302A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106229287A (zh) * | 2016-09-30 | 2016-12-14 | 厦门市三安光电科技有限公司 | 用于转移微元件的转置头及微元件的转移方法 |
CN106328576A (zh) * | 2016-09-30 | 2017-01-11 | 厦门市三安光电科技有限公司 | 用于微元件转移的转置头的制作方法 |
CN106449498A (zh) * | 2016-09-30 | 2017-02-22 | 厦门市三安光电科技有限公司 | 用于转移微元件的转置头及微元件的转移方法 |
CN107039298A (zh) * | 2016-11-04 | 2017-08-11 | 厦门市三安光电科技有限公司 | 微元件的转移装置、转移方法、制造方法、装置和电子设备 |
CN107068693A (zh) * | 2017-02-20 | 2017-08-18 | 友达光电股份有限公司 | 电子组件及其制造方法、转置元件及微元件的转置方法 |
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US20200227302A1 (en) | 2020-07-16 |
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WO2019062117A1 (zh) | 2019-04-04 |
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