CN107681245A - A kind of negative Meta Materials hetero-junctions of list for loading pectination inductance and split ring resonator - Google Patents

A kind of negative Meta Materials hetero-junctions of list for loading pectination inductance and split ring resonator Download PDF

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CN107681245A
CN107681245A CN201710866174.XA CN201710866174A CN107681245A CN 107681245 A CN107681245 A CN 107681245A CN 201710866174 A CN201710866174 A CN 201710866174A CN 107681245 A CN107681245 A CN 107681245A
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microstrip line
inductance
pectination
meta materials
conduction band
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CN107681245B (en
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冯团辉
王利敏
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Xuchang University
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Xuchang University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/06Cavity resonators
    • H01P7/065Cavity resonators integrated in a substrate

Abstract

The invention discloses a kind of list for loading pectination inductance and split ring resonator to bear Meta Materials hetero-junctions, including microstrip line, chip inductor, patch capacitor, pectination inductance, split ring resonator;The center conduction band of microstrip line periodically offers mechanical through hole and slit;Chip inductor is inserted in mechanical through hole, and upper end is connected with the center conduction band of microstrip line, and lower end is connected with the earth plate of microstrip line, patch capacitor is across slit, both ends are connected with the center conduction band of microstrip line, by the selection of inductance value and capacitance, form the hetero-junctions born Meta Materials by two kinds of lists and formed;Two pectination inductance are symmetrically distributed in the center conduction band both sides of microstrip line positioned at the centre position of the single negative Meta Materials of electricity;Two split ring resonators are located at pectination inductance nearby and have a certain distance between the center conduction band of microstrip line;The list of the loading pectination inductance and split ring resonator bears Meta Materials hetero-junctions in the case where not increasing single negative Meta Materials hetero-junctions length, realizes the significantly enhancing of its quality factor.

Description

A kind of negative Meta Materials hetero-junctions of list for loading pectination inductance and split ring resonator
Technical field
The present invention relates to Meta Materials field, more particularly to, a kind of list of loading pectination inductance and split ring resonator is born Meta Materials hetero-junctions.
Background technology
Single negative Meta Materials (single-negative metamaterials) refer to two parameters of dielectric constant and magnetic conductivity In have a material that a parameter is negative value, including dielectric constant be negative value and magnetic conductivity be on the occasion of the single negative Meta Materials of electricity (epsilon-negative metamaterials) and dielectric constant be on the occasion of and magnetic conductivity be negative value magnetic list bear Meta Materials (mu-negative metamaterials).It is not to electromagnetic wave that single electric single-negative material Meta Materials or magnetic list, which bear Meta Materials, Transparent, and the hetero-junctions (will be simply referred to as single negative Meta Materials hetero-junctions below) being made up of the negative Meta Materials of two kinds of lists is based on resonance tunnel Wearing mechanism but can be transparent to electromagnetic wave so that single negative Meta Materials hetero-junctions has important application.Document " Tuanhui Feng, Yunhui Li,Jiyong Guo,Hongqiang Li,Yenwen Zhang,Yunlong Shi,Hong Chen,“Highly localized mode in a structure made of epsilon-negative and mu-negative metamaterial”[J],J.Appl.Phys.,2008,104:013107. " points out to bear Meta Materials using the list based on transmission line Hetero-junctions (it is as shown in Figure 1 that the list based on microstrip line bears Meta Materials hetero-junctions) can realize the sub- ripple for breaking through the limitation of the half-wavelength limit Long resonator, the i.e. length of the transmission line resonator and resonant frequency are unrelated, in the case where ensureing that resonant frequency is constant, resonance The length of chamber is changeable, so as to less than half wavelength or shorter.It is different that the list based on microstrip line shown in Fig. 1 bears Meta Materials Matter knot, including microstrip line 11, chip inductor 12, patch capacitor 13;Periodically offered on the center conduction band 16 of microstrip line The mechanical through hole 17 run through down, and slit 18 is periodically carved with, wherein mechanical through hole 17 is located at the center conduction band 16 of microstrip line Center line on, a mechanical through hole 17 and slit 18 form a unit, and shared by mechanical through hole 17 and slit 18 Microstrip line center conduction band 16 length be respectively element length half;Chip inductor 12 is inserted in the machinery opened up and led to In hole 17, upper end is connected by scolding tin with the center conduction band 16 of microstrip line, and lower end is connected by scolding tin with the earth plate of microstrip line, The patch capacitor 13 is connected across slit 18, left and right ends by scolding tin with the center conduction band 16 of microstrip line, passes through inductance value With the selection of capacitance, left side half part forms electric single negative Meta Materials 19, and right side half part forms magnetic list and born Meta Materials 20, so as to form the hetero-junctions born Meta Materials by two kinds of lists and formed.However, this bear Meta Materials hetero-junctions based on list Transmission line resonator also has its shortcoming, that is, when the length of resonator is shorter, the quality factor of resonator are relatively low.And quality Factor is a key character parameter of resonator, and in many cases, being intended to resonator has higher quality factor.When So, the increase of quality factor can be realized by increasing the length of resonator, but this runs counter to the original intention of sub-wavelength resonator, Therefore, the prior art is defective, it is necessary to improve.
The content of the invention
The technical problems to be solved by the invention be do not increase the list based on microstrip line shown in Fig. 1 bear Meta Materials it is heterogeneous In the case of tying length, the significantly enhancing of its quality factor is realized.
To achieve the above object, present invention employs following technical schemes:One kind loading pectination inductance and opening resonance The list of ring bears Meta Materials hetero-junctions, including microstrip line, chip inductor, patch capacitor, pectination inductance, split ring resonator;
The center conduction band of the microstrip line periodically offers the mechanical through hole run through up and down, and is periodically carved with narrow Seam, a mechanical through hole and a slit form a unit;
The chip inductor is inserted in the mechanical through hole opened up, and upper end is connected by scolding tin with the center conduction band of microstrip line, Lower end is connected by scolding tin with the earth plate of microstrip line, and the patch capacitor passes through scolding tin and micro-strip across slit, left and right ends The center conduction band of line is connected, and by the selection of inductance value and capacitance, left side half part forms electric single negative Meta Materials, right Side half part forms magnetic list and bears Meta Materials, so as to form the hetero-junctions born Meta Materials by two kinds of lists and formed;
The pectination inductance has two, positioned at the centre position of electric single negative Meta Materials, the center conduction band of one end and microstrip line One end open circuit is connected, and is symmetrically distributed in the both sides of the center conduction band of microstrip line;
The split ring resonator has two, is distributed in the both sides of the center conduction band of microstrip line, and near pectination inductance, There is a certain distance between the center conduction band of microstrip line simultaneously, so as to ensure that split ring resonator and pectination inductance can occur by force Coupling, and do not couple or couple with the center conduction band of microstrip line and be extremely weak.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, the microstrip line It is to be realized using double-sided printed-circuit board.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, and the machinery is logical Hole position is on the center line of the center conduction band of microstrip line.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, in each unit The length of the center conduction band of microstrip line shared by mechanical through hole and slit is respectively the half of element length.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, and the opening is humorous The ring that shakes is square, and symmetrical on the center conduction band of microstrip line.
It is relative to the beneficial effect of prior art, it is proposed by the present invention to load pectination inductance and open using such scheme The list of mouth resonant ring bears Meta Materials hetero-junctions in the case where not increasing single negative Meta Materials hetero-junctions length, realizes based on micro-strip The list of line bears the significantly enhancing of Meta Materials hetero-junctions quality factor.
Brief description of the drawings
Fig. 1 is the structural representation that the existing list based on microstrip line bears Meta Materials hetero-junctions;
Fig. 2 is the structural representation of one embodiment of the present of invention;
Fig. 3 is that the list of loading pectination inductance and split ring resonator proposed by the invention bears the transmission spy of Meta Materials hetero-junctions Linearity curve bears the comparison of the transfer curve of Meta Materials hetero-junctions with the list shown in Fig. 1 before loading;
Fig. 4 is the enlarged drawing of part A in Fig. 2 of the present invention.
Embodiment
For the ease of understanding the present invention, below in conjunction with the accompanying drawings and specific embodiment, the present invention will be described in more detail. The preferred embodiment of the present invention is given in accompanying drawing.But the present invention can realize in many different forms, and it is unlimited In the embodiment described by this specification.On the contrary, the purpose for providing these embodiments makes to the disclosure Understand more thorough and comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element Or there may also be element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to To another element or it may be simultaneously present centering elements.Term used in this specification " vertical ", " running through up and down ", "left", "right" and similar statement are for illustrative purposes only.
Unless otherwise defined, technology all used in this specification and scientific terminology are led with belonging to the technology of the present invention The implication that the technical staff in domain is generally understood that is identical.Used term is simply in the description of the invention in this specification The purpose of description specific embodiment, it is not intended to the limitation present invention.
The list of the loading pectination inductance and split ring resonator bears Meta Materials hetero-junctions, including microstrip line, chip inductor, paster Electric capacity, pectination inductance, split ring resonator;The center conduction band of the microstrip line periodically offers the machinery run through up and down and led to Hole, and slit is periodically carved with, a mechanical through hole and a slit form a unit;The chip inductor, which is inserted in, to be opened up Mechanical through hole in, upper end is connected by scolding tin with the center conduction band of microstrip line, and lower end passes through scolding tin and the earth plate of microstrip line Connect, the patch capacitor connected across slit, left and right ends by scolding tin with the center conduction band of microstrip line, by inductance value with The selection of capacitance, left side half part form electric single negative Meta Materials, and right side half part forms magnetic list and bears super material Material, so as to form the hetero-junctions born Meta Materials by two kinds of lists and formed;The pectination inductance has two, positioned at electric single negative Meta Materials The center conduction band of centre position, one end and microstrip line connects one end open circuit, and is symmetrically distributed in the two of the center conduction band of microstrip line Side;The split ring resonator has two, is distributed in the both sides of the center conduction band of microstrip line, and near pectination inductance, simultaneously There is a certain distance between the center conduction band of microstrip line, so as to ensure that strong coupling can occur for split ring resonator and pectination inductance Close, and do not couple or couple with the center conduction band of microstrip line and be extremely weak.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, the microstrip line It is to be realized using double-sided printed-circuit board.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, and the machinery is logical Hole position is on the center line of the center conduction band of microstrip line.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, in each unit The length of center conduction band shared by mechanical through hole and slit is respectively the half of element length.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, and the opening is humorous The ring that shakes is square, and symmetrical on the center conduction band of microstrip line.
Preferably, the list of described loading pectination inductance and split ring resonator is born in Meta Materials hetero-junctions, and the opening is humorous The ring that shakes is rectangle, and symmetrical on the center conduction band of microstrip line.
One embodiment of the present of invention is that as shown in Figure 2, Figure 4 shows, the list of the loading pectination inductance and split ring resonator is negative super Material hetero-junctions, including microstrip line 1, chip inductor 2, patch capacitor 3, pectination inductance 4, split ring resonator 5;
The mechanical through hole 7 run through up and down is periodically offered on the center conduction band 6 of the microstrip line, and is periodically carved There is slit 8, wherein mechanical through hole 7 is located on the center line of the center conduction band 6 of microstrip line, a mechanical through hole 7 and a slit 8 A unit is formed, and the length of the center conduction band 6 of mechanical through hole 7 and the microstrip line shared by slit 8 is respectively element length Half;
The chip inductor 2 is inserted in the mechanical through hole 7 opened up, and upper end is connect by the center conduction band 6 of scolding tin and microstrip line Logical, lower end is connected by scolding tin with the earth plate of microstrip line, the patch capacitor 3 across slit 8, left and right ends by scolding tin with The center conduction band 6 of microstrip line is connected, and by the selection of inductance value and capacitance, left side half part forms electric single negative super material Material 9, right side half part form magnetic list and bear Meta Materials 10, so as to form the hetero-junctions born Meta Materials by two kinds of lists and formed;
The pectination inductance 4 has two, and positioned at the centre position of electric single negative Meta Materials 9, the center of one end and microstrip line is led Band 6 connects one end open circuit, and is symmetrically distributed in the both sides of the center conduction band 6 of microstrip line;
The split ring resonator 5 is square, has two, is symmetrically distributed in the both sides of the center conduction band 6 of microstrip line, and position Near pectination inductance 4, while there is a certain distance between the center conduction band 6 of microstrip line, so as to ensure the He of split ring resonator 5 Close coupling can occur for pectination inductance 4, and do not couple or couple with the center conduction band 6 of microstrip line and be extremely weak.Further, institute Stating microstrip line is realized using double-sided printed-circuit board.
According to technical scheme proposed by the invention, we have made sample, and we are using dielectric when making sample Constant is 2.65, and media plate thickness are 1.0mm double-sided printed-circuit board, and the center conduction band width of microstrip line is 2.73mm.It is right In electric single negative Meta Materials, the chip inductor of loading and the value of patch capacitor are respectively 3.3nH and 3.0pF, and super material is born for magnetic list Material, the chip inductor of loading and the value of patch capacitor are respectively 8.2nH and 1.2pF, and Meta Materials, a unit are born for two kinds of lists Length be d=8mm.In addition, the values of the structural parameters of pectination inductance and split ring resonator is:The long l=of pectination inductance 21.46mm wide w=0.3mm;The length of side a=11.8mm of square openings resonant ring, the metal line-width w=of split ring resonator 0.3mm, the opening slit width g=0.3mm of split ring resonator, the distance p=0.2mm of split ring resonator to pectination inductance.
Fig. 3 give the loading pectination inductance and split ring resonator shown in Fig. 2 of test list bear Meta Materials hetero-junctions with The transfer curve that the list based on microstrip line shown in Fig. 1 bears Meta Materials hetero-junctions compares, and wherein solid line is to be based on microstrip line List bear the transfer curve of Meta Materials hetero-junctions, dotted line is loading pectination inductance based on microstrip line shown in Fig. 2 and opened The list of mouthful resonant ring bears the transfer curve of Meta Materials hetero-junctions, as seen from Figure 3, the transmission peaks of structure shown in Fig. 2 with The transmission peaks of structure shown in Fig. 1 are compared, and quality factor significantly strengthen.That is, using structure shown in Fig. 2, realize not In the case of the length for increasing the negative Meta Materials hetero-junctions of the list based on microstrip line shown in Fig. 1, its quality factor is set to have obtained greatly Width strengthens.
It should be noted that above-mentioned each technical characteristic continues to be mutually combined, the various embodiments not being enumerated above are formed, It is accordingly to be regarded as the scope of description of the invention record;Also, for those of ordinary skills, it can add according to the above description To improve or convert, and all these modifications and variations should all belong to the protection domain of appended claims of the present invention.

Claims (5)

1. a kind of negative Meta Materials hetero-junctions of list for loading pectination inductance and split ring resonator, it is characterised in that including microstrip line, patch Piece inductance, patch capacitor, pectination inductance, split ring resonator;
The center conduction band of the microstrip line periodically offers the mechanical through hole run through up and down, and is periodically carved with slit, One mechanical through hole and a slit form a unit;
The chip inductor is inserted in the mechanical through hole opened up, and upper end is connected by scolding tin with the center conduction band of microstrip line, lower end Connected by scolding tin with the earth plate of microstrip line, for the patch capacitor across slit, left and right ends pass through scolding tin and microstrip line Center conduction band is connected, and by the selection of inductance value and capacitance, left side half part forms electric single negative Meta Materials, right side two / part forms magnetic list and bears Meta Materials, so as to form the hetero-junctions born Meta Materials by two kinds of lists and formed;
The pectination inductance has two, and positioned at the centre position of electric single negative Meta Materials, the center conduction band of one end and microstrip line connects One end is opened a way, and is symmetrically distributed in the both sides of the center conduction band of microstrip line;
The split ring resonator has two, is distributed in the both sides of the center conduction band of microstrip line, and near pectination inductance, simultaneously There is a certain distance between the center conduction band of microstrip line, so as to ensure that strong coupling can occur for split ring resonator and pectination inductance Close, and do not couple or couple with the center conduction band of microstrip line and be extremely weak.
2. the list of loading pectination inductance according to claim 1 and split ring resonator bears Meta Materials hetero-junctions, its feature exists In the microstrip line is realized using double-sided printed-circuit board.
3. the list of loading pectination inductance according to claim 1 and split ring resonator bears Meta Materials hetero-junctions, its feature exists In the mechanical through hole is located on the center line of the center conduction band of microstrip line.
4. the list of loading pectination inductance according to claim 1 and split ring resonator bears Meta Materials hetero-junctions, its feature exists In the length of, the center conduction band of the microstrip line in each unit shared by mechanical through hole and slit be respectively element length two/ One.
5. the list of loading pectination inductance according to claim 1 and split ring resonator bears Meta Materials hetero-junctions, its feature exists In the split ring resonator is square, and symmetrical on the center conduction band of microstrip line.
CN201710866174.XA 2017-09-22 2017-09-22 Single-negative metamaterial heterojunction loaded with comb-shaped inductor and open resonant ring Active CN107681245B (en)

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CN112490612A (en) * 2020-11-02 2021-03-12 许昌学院 Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide
CN112490612B (en) * 2020-11-02 2021-10-29 许昌学院 Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide

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