CN103296373A - Method for improving sub-wavelength resonant cavity quality factors - Google Patents
Method for improving sub-wavelength resonant cavity quality factors Download PDFInfo
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- CN103296373A CN103296373A CN2012105196940A CN201210519694A CN103296373A CN 103296373 A CN103296373 A CN 103296373A CN 2012105196940 A CN2012105196940 A CN 2012105196940A CN 201210519694 A CN201210519694 A CN 201210519694A CN 103296373 A CN103296373 A CN 103296373A
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Abstract
The invention relates to a method for improving sub-wavelength resonant cavity quality factors. A comb-shaped line inductor is loaded in a central position of a single-negative material heterojunction based on a microstrip line, the central position of the single-negative material heterojunction is an interface position of an electric single-negative material and a magnetic single-negative material, one end of the comb-shaped line inductor is linked with a central conduction band of the microstrip line, the other end of the comb-shaped line inductor is in a open-circuit state, a resonance ring with an opening is loaded beside the comb-shaped line inductor, and coupling occurs to the resonance ring with the opening and the comb-shaped line inductor. The distance between the resonance ring with the opening and the comb-shaped line inductor is short, strong coupling can occur between the resonance ring with the opening and the comb-shaped line inductor, a certain distance is kept between the resonance ring with the opening and the central conduction band of the microstrip line, and therefore no coupling or extremely weak coupling occurs between the resonance ring with the opening and the central conduction band of the microstrip line. According to the method, the quality factors of resonance cavities which are made by microstrip lines and based on ingle-negative material heterojunctions are improved.
Description
Technical field
The present invention relates to a kind of method that improves sub-wavelength resonant cavity quality factor.
Background technology
Microwave cavity has purposes widely as a kind of important microwave component in microwave technology.For example microwave cavity in microwave measurement as wavemeter; It then is the important component part of pipe in microwave tube; In the microwave semiconductor oscillistor as the frequency stabilization chamber; In microwave band-pass, band stop filter, microwave cavity is their basic link etc.In various microwave cavities, the microstrip line resonant cavity then is more common a kind of.Because for making the microwave equipment miniaturization, particularly in the microwave circuit of small-signal operation, microstrip circuit uses comparatively extensive at microwave circuit, and the microstrip line resonant cavity usually is the part of various microstrip circuits.
For common microstrip line resonant cavity, its length and resonance frequency have relation closely.For example for the microstrip line resonant cavity of two ends open circuits, if the integral multiple of half-wavelength in its total length band (
L is the total length of resonant cavity, λ
pThe wavelength of in microstrip line, propagating for electromagnetic wave).So, under this condition, if the shortest length of resonant cavity half wavelength at least.In order to make device miniaturization, or for some special applications, people wish guaranteeing that its length can be as far as possible little, for example less than half wavelength or shorter under the constant situation of resonator cavity resonance frequency under a lot of situations.In order to address this problem, once proposed a kind of sub-wavelength resonant cavity that can break through the half-wavelength limit, the length of this transmission line resonant cavity and resonance frequency are irrelevant, are guaranteeing under the constant situation of resonance frequency, the length of resonant cavity is changeable, thereby can be less than half wavelength or shorter.This sub-wavelength resonant cavity is to realize by the heterojunction of being made up of electric single-negative material and magnetic single-negative material.Single-negative material is a kind of new material that was suggested and caused extensive concern in recent years, and it has numerous new kink characteristics and important application widely.Single-negative material refers to that mainly in dielectric constant and two electromagnetic parameters of magnetic permeability a parameter being arranged is the material of negative value, comprise dielectric constant be negative value and magnetic permeability on the occasion of the single negative (Epsilon-negative of electricity, ENG) material and magnetic permeability be negative value and dielectric constant on the occasion of magnetic list negative (Mu-negative, MNG) material.Though independent electric single-negative material or magnetic single-negative material are opaque to electromagnetic wave, the heterojunction of being made up of two kinds of single-negative materials under certain condition can be transparent to electromagnetic wave based on resonance tunnel-through mechanism.The single-negative material heterojunction that proposes in the pertinent literature to be made by transmission line (is by load lumped capacity and lumped inductance realization at coplanar waveguide transmission line, as shown in Figure 1, wherein electric single-negative material is selected one group of capacitor and inductor value for use, the magnetic single-negative material is selected one group of capacitor and inductor value for use) transmission characteristic identical with the transmission characteristic of transmission line resonant cavity, the function that has resonant cavity based on the single-negative material heterojunction of transmission line, but, different with traditional resonant cavity is, length and resonance frequency based on the transmission line resonant cavity of single-negative material heterojunction are irrelevant, can break through the half-wavelength limit, thereby realize the miniaturization of resonant cavity.
Yet this transmission line resonant cavity based on the single-negative material heterojunction also has its shortcoming, that be exactly when the length of resonant cavity more in short-term, the quality factor of resonant cavity are lower.Quality factor are key character parameters of resonant cavity, and under a lot of situations, we wish that resonant cavity has higher quality factor.Certainly, the increase of quality factor can realize by the length that increases resonant cavity, but this runs counter to the original intention of sub-wavelength resonant cavity, under the situation that does not increase cavity length, realize the raising of quality factor so? this is the problem to be solved in the present invention just.
Summary of the invention
The objective of the invention is to improve the quality factor based on the sub-wavelength resonant cavity of single-negative material heterojunction of utilizing that microstrip line makes.
For this reason, the present invention is by the following technical solutions:
A kind of method that improves sub-wavelength resonant cavity quality factor, load a pectinate line inductance in the center based on the single-negative material heterojunction of microstrip line, the center of described single-negative material heterojunction refers to electric single-negative material and magnetic single-negative material at the interface, the center conduction band of described pectinate line inductance one end and microstrip line connects mutually, and the other end of described pectinate line inductance is in open-circuit condition; Load a split ring resonator on described pectinate line inductance next door, described split ring resonator and described pectinate line inductance are coupled.
The distance of described split ring resonator and described pectinate line inductance is less, close coupling can take place between the two, and described split ring resonator will maintain a certain distance with the center conduction band of microstrip line, makes not take place between the two a little less than coupling or the coupling extremely.
Described split ring resonator is a single ring architecture.
Described split ring resonator is a twin nuclei.
Described split ring resonator be shaped as rectangle.
Described split ring resonator aperture position be unfixed.
After loading pectinate line inductance and split ring resonator based on the sub-wavelength resonant cavity of single-negative material heterojunction, quality factor are greatly improved, and have improved the quality factor based on the resonant cavity of single-negative material heterojunction of utilizing that microstrip line makes.
Description of drawings
Fig. 1 is the prior art structure chart;
Fig. 2 is one of embodiments of the invention structure chart;
Fig. 3 is two of embodiments of the invention structure chart;
Fig. 4 is three of embodiments of the invention structure chart.
Embodiment
In conjunction with Fig. 1, Fig. 2, Fig. 3, a kind of method that improves sub-wavelength resonant cavity quality factor, load a pectinate line inductance 3 in the center based on the single-negative material heterojunction of microstrip line, the center of described single-negative material heterojunction refers to the single negative material of electricity, 1 and magnetic single-negative material 2 at the interface, the center conduction band of described pectinate line inductance one end and microstrip line connects mutually, and the other end of described pectinate line inductance is in open-circuit condition; Load a split ring resonator 4 on described pectinate line inductance next door, described split ring resonator and described pectinate line inductance are coupled.
The distance of described split ring resonator and described pectinate line inductance is less, close coupling can take place between the two, and described split ring resonator will maintain a certain distance with the center conduction band of microstrip line, makes not take place between the two a little less than coupling or the coupling extremely.
Described split ring resonator is a single ring architecture.
Described split ring resonator is a twin nuclei.
Described split ring resonator be shaped as rectangle.
Described split ring resonator aperture position be unfixed.
What we adopted when making sample is that dielectric constant is 2.65, and dielectric-slab thickness is the double-sided printed-circuit board of 1.0mm, and the center conduction band width of microstrip line is 2.73mm.For preparing electric single-negative material, the lumped capacity that we adopt and the value of lumped inductance are respectively 3.0pF, 3.3nH, and element length is 8mm.Be preparation magnetic single-negative material, the lumped capacity that we adopt and the value of lumped inductance are respectively 1.2pF, 8.2nH, and element length also is 8mm.The pectinate line inductance that loads at heterojunction and the parameter value of split ring resonator are: the long l=21.46mm of pectinate line inductance, the length of square openings resonant ring and wide be a=b=11.8mm, the wide and resonant ring of the metal line-width of pectinate line inductance and split ring resonator, the opening part of split ring resonator seam is t=0.3mm to the distance of pectinate line inductance.
The above embodiment has only expressed embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (6)
1. method that improves sub-wavelength resonant cavity quality factor, it is characterized in that, load a pectinate line inductance in the center based on the single-negative material heterojunction of microstrip line, the center of described single-negative material heterojunction refers to electric single-negative material and magnetic single-negative material at the interface, the center conduction band of described pectinate line inductance one end and microstrip line connects mutually, and the other end of described pectinate line inductance is in open-circuit condition; Load a split ring resonator on described pectinate line inductance next door, described split ring resonator and described pectinate line inductance are coupled.
2. a kind of method that improves sub-wavelength resonant cavity quality factor according to claim 1, it is characterized in that, the distance of described split ring resonator and described pectinate line inductance is less, close coupling can take place between the two, described split ring resonator will maintain a certain distance with the center conduction band of microstrip line, makes not take place between the two a little less than coupling or the coupling extremely.
3. a kind of method that improves sub-wavelength resonant cavity quality factor according to claim 1 is characterized in that, described split ring resonator is a single ring architecture.
4. a kind of method that improves sub-wavelength resonant cavity quality factor according to claim 1 is characterized in that, described split ring resonator is a twin nuclei.
5. a kind of method that improves sub-wavelength resonant cavity quality factor according to claim 1 is characterized in that, described split ring resonator be shaped as rectangle.
6. a kind of method that improves sub-wavelength resonant cavity quality factor according to claim 1 is characterized in that, described split ring resonator aperture position be unfixed.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146937A (en) * | 2017-03-28 | 2017-09-08 | 许昌学院 | A kind of list based on microstrip line bears Meta Materials hetero-junctions |
| CN112490612A (en) * | 2020-11-02 | 2021-03-12 | 许昌学院 | Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070262834A1 (en) * | 2006-05-11 | 2007-11-15 | Seiko Epson Corporation | Bandpass filter, electronic device including said bandpass filter, and method of producing a bandpass filter |
| CN101246982A (en) * | 2008-03-17 | 2008-08-20 | 同济大学 | Second self compound transmission line and resonance loop coupled band-pass filter |
| US20110109525A1 (en) * | 2009-11-12 | 2011-05-12 | Samsung Electronics Co., Ltd. | Antenna device and wireless communication apparatus having the same |
-
2012
- 2012-12-06 CN CN2012105196940A patent/CN103296373A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070262834A1 (en) * | 2006-05-11 | 2007-11-15 | Seiko Epson Corporation | Bandpass filter, electronic device including said bandpass filter, and method of producing a bandpass filter |
| CN101246982A (en) * | 2008-03-17 | 2008-08-20 | 同济大学 | Second self compound transmission line and resonance loop coupled band-pass filter |
| US20110109525A1 (en) * | 2009-11-12 | 2011-05-12 | Samsung Electronics Co., Ltd. | Antenna device and wireless communication apparatus having the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146937A (en) * | 2017-03-28 | 2017-09-08 | 许昌学院 | A kind of list based on microstrip line bears Meta Materials hetero-junctions |
| CN112490612A (en) * | 2020-11-02 | 2021-03-12 | 许昌学院 | Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide |
| CN112490612B (en) * | 2020-11-02 | 2021-10-29 | 许昌学院 | Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide |
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Application publication date: 20130911 |