CN107658243A - 用于在第一衬底上制造第二衬底且去除第一衬底的设备 - Google Patents
用于在第一衬底上制造第二衬底且去除第一衬底的设备 Download PDFInfo
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- CN107658243A CN107658243A CN201710619640.4A CN201710619640A CN107658243A CN 107658243 A CN107658243 A CN 107658243A CN 201710619640 A CN201710619640 A CN 201710619640A CN 107658243 A CN107658243 A CN 107658243A
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- Prior art keywords
- growth substrates
- substrate
- pedestal
- etching
- gas
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- 239000000758 substrate Substances 0.000 title claims abstract description 307
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000007789 gas Substances 0.000 claims abstract description 106
- 238000005530 etching Methods 0.000 claims abstract description 99
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 95
- 230000008021 deposition Effects 0.000 claims abstract description 65
- 239000000463 material Substances 0.000 claims description 63
- 239000013077 target material Substances 0.000 description 74
- 238000000151 deposition Methods 0.000 description 49
- 238000000034 method Methods 0.000 description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 101150015071 vent1 gene Proteins 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010092 LiAlO2 Inorganic materials 0.000 description 1
- 229910010936 LiGaO2 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- BULVZWIRKLYCBC-UHFFFAOYSA-N phorate Chemical compound CCOP(=S)(OCC)SCSCC BULVZWIRKLYCBC-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/52—Controlling or regulating the coating process
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract
本申请提供了一种用于制造衬底的设备,包括:沉积室壳体,其容纳生长衬底;供给喷嘴,其将用于在生长衬底上形成目标大尺寸衬底的沉积气体供应至沉积室壳体中;基座,其支撑生长衬底并且将生长衬底的后表面暴露于蚀刻气体;以及内衬,其连接至基座。内衬将蚀刻气体与沉积气体隔离,并且将蚀刻气体引向生长衬底的后表面。基座包括暴露生长衬底的后表面的中心孔以及支撑生长衬底的支撑突出物,支撑突出物从基座的限定了中心孔的内侧壁朝向中心孔的中心突出。
Description
相关申请的交叉引用
本申请要求于2016年7月26日提交至韩国知识产权局的题为“制造大尺寸衬底的设备”的韩国专利申请No.10-2016-0094831的优先权,该申请的公开以引用方式全文并入本文中。
技术领域
实施例涉及一种用于制造衬底的设备,更具体地,涉及一种用于在第一衬底上制造第二衬底而在第二衬底形成之后或第二衬底形成期间去除第一衬底的设备。
背景技术
蓝宝石衬底广泛用于制造氮化镓衬底,但是其昂贵并且难于以大尺寸制造。硅衬底已经被建议作为替代,但是经受了例如由于硅衬底和氮化镓衬底之间的热膨胀系数的差异而导致的应力和后续损害的问题。
发明内容
针对一种设备的一个或多个实施例包括:沉积室壳体,其容纳生长衬底;供给喷嘴,其将用于在生长衬底上形成目标大尺寸衬底的沉积气体供应至沉积室壳体中;基座,其支撑生长衬底并且将生长衬底的后表面暴露于蚀刻气体;以及内衬,其连接至基座,其中,内衬用于将蚀刻气体与沉积气体隔离,并且将蚀刻气体引向生长衬底的后表面,其中,基座包括暴露出生长衬底的后表面的中心孔以及支撑生长衬底的支撑突出物,支撑突出物从基座的限定了中心孔的内侧壁朝向中心孔的中心突出。
针对一种设备的一个或多个实施例包括:沉积部分,在沉积部分中供应沉积气体以在包括在沉积部分中的第一衬底上沉积第二衬底材料层;蚀刻部分,在蚀刻部分中供应蚀刻气体以通过蚀刻去除第一衬底;支撑单元,其位于沉积部分和蚀刻部分之间,其中,所述支撑单元支撑第一衬底;以及控制器,其控制第二衬底材料层的沉积和第一衬底的蚀刻,其中,控制器在开始供应蚀刻气体之前开始供应沉积气体,并且沉积气体的供应和蚀刻气体的供应至少部分地重叠。
针对一种设备的一个或多个实施例包括:支撑件,其支撑第一衬底,支撑件暴露出第一衬底的上表面和后表面;沉积部分,在沉积部分中供应沉积气体以在第一衬底的上表面上沉积第二衬底材料层;蚀刻部分,在蚀刻部分中供应蚀刻气体以通过蚀刻第一衬底的后表面来去除第一衬底;以及隔离部分,其将蚀刻气体与沉积气体隔离。
附图说明
通过参考附图详细描述示例性实施例,各个特征对于本领域技术人员而言将变得显而易见,其中:
图1示出了根据实施例的制造大尺寸衬底的衬底制造设备的示意图;
图2示出了根据另一实施例的基座、基座盖和衬底的组合关系的详细分解透视图;
图3更详细地示出了图2中基座、基座盖和衬底的组合关系的纵剖视图和平面图;
图4A更详细地示出了示出根据另一实施例的基座、基座盖和衬底的组合关系的纵剖视图和平面图;
图4B至图4E示出了根据实施例的具有不同形状的支撑突出物的局部透视图;
图5示出了根据另一实施例的内衬和基座的构造的纵剖视图;
图6A和图6B示出了根据实施例的基座盖的形状和与基座盖形状相对应的目标材料层的形状的局部纵剖视图;
图7A示出了根据另一实施例的基座盖的透视图;
图7B概念性地示出了当使用图7A的基座盖时蚀刻部分的纵剖视图;
图8概念性地示出了根据实施例的基座和基座盖的耦接的分解透视图;
图9A示出了示出根据另一实施例的基座的结构的透视剖视图;
图9B示出了在支撑在图9A的基座上的生长衬底之上形成的目标材料层的平面图;
图9C和图9D示出了通过蚀刻去除生长衬底而引起的变化的纵剖视图;
图10概念性地示出了示出根据另一实施例的制造大尺寸衬底的设备的纵剖视图;
图11概念性地示出了根据另一实施例的制造自支撑(free-standing)衬底的设备的示意图;
图12示出了根据实施例的制造自支撑衬底的方法的流程图;
图13A至图13C示出了在生长衬底上形成目标材料层并通过蚀刻去除生长衬底的时间顺序的时序图;以及
图14示出了根据另一实施例的制造自支撑衬底的方法的流程图。
具体实施方式
图1是根据实施例的制造大尺寸衬底的衬底制造设备100的示意图。参考图1,生长衬底1可以容纳在沉积室壳体120中。目标材料层3可以形成在生长衬底1上。
生长衬底1可以是例如蓝宝石衬底、硅衬底、砷化镓(GaAs)衬底、碳化硅(SiC)衬底、磷化铟(InP)衬底、氧化镁(MgO)衬底、铝酸镁(MgAl2O4)衬底、铝酸锂(LiAlO2)衬底或氧化锂镓(LiGaO2)衬底。例如,为了形成大面积的目标材料层3,可以使用成本相对较低并且可以容易地制造的硅衬底。
将描述使用直径为约4英寸(约10.26cm)或更大(例如,约4英寸至约18英寸)的硅衬底作为生长衬底1的实施例。然而,本领域技术人员应当理解,生长衬底1可以具有比以上述直径更小的直径,并且生长衬底1可以是由不同于硅的材料制成的衬底。生长衬底1可以具有约0.1mm至约1mm的厚度。当生长衬底1的厚度过薄时,生长衬底1的机械强度可能不足。当生长衬底的厚度过厚时,进一步的蚀刻处理可能耗时较长,导致生产率下降。
形成在生长衬底1上的目标材料层3的材料可以与待制造为自支撑衬底的目标衬底的材料相同。例如,目标材料层3可以包括例如氮化铟铝镓(InxAlyGa1-x-yN(其中,0≤x≤1和0≤y≤1))的III族氮化物。例如,目标材料层3的材料可以是氮化镓(GaN)、氮化铝(AlN)、氮化铝镓(AlGaN)或氮化铟镓(InGaN)。
可以通过使用选自例如氢化物气相外延(HVPE)、金属有机气相外延(MOVPE)、化学气相沉积(CVD)和分子束外延(MBE)的任何适当的方法来在生长衬底1之上形成目标材料层3。
在形成目标材料层3之前,如果需要的话,可以在生长衬底1上形成缓冲层。可以由具有与形成在生长衬底1上的目标材料层3的晶格常数类似的晶格常数的材料形成缓冲层。缓冲层可防止回熔(melt-back)。回熔是指:在生长衬底1上生长目标材料层3期间,生长衬底1的材料直接接触目标材料层3时,生长衬底1的材料扩散并融入至目标材料层3中。
缓冲层可以由例如AlN、氮化钽(TaN)、氮化钛(TiN)、氮化铪(HfN)、GaN和AlGaN之一形成,或者可以是AlN/AlGaN/GaN的三层。缓冲层可以具有例如约5nm至约50μm的厚度。缓冲层可以用于在其上外延生长GaN层。在一些实施例中,可以使用有机化学气相沉积(MOCVD)来形成缓冲层。
如图1所示,由于生长衬底1的边缘部分会被基座盖114覆盖,所以,生长衬底1的直径会与目标材料层3的直径不匹配,例如,生长衬底1的直径会大于目标材料层3的直径。换言之,基座盖114会在第三方向上与生长衬底1的边缘部分重叠,并且会邻接目标材料层3的侧壁。
生长衬底1可以由基座110支撑。基座110可以在支撑生长衬底1的同时将生长衬底1的后表面(rear surface)暴露于蚀刻气体。基座110可以是具有中心孔CH的环形形状。由基座110支撑的生长衬底1可以通过中心孔CH暴露于蚀刻气体。蚀刻气体可以是例如氯(Cl2)气、氯化氢(HCl)气体等。然而,实施例不限于此。
基座盖114可以设置在基座110之上。基座盖114可以防止沉积材料沉积到基座110上。基座110可以具有在第三方向上沿着其外部上表面延伸并与基座盖114的上表面共面的突出部分110z,使得基座盖114没有覆盖基座110的全部上表面。
在一些实施例中,可以由内衬112支撑基座110。内衬112可以结合至基座110的下部,并且可以隔离由内衬112建立的边界内部的蚀刻环境与内衬112外部的沉积环境。内衬112可以通过供应管线140将从外部供应的蚀刻气体的气流引导至生长衬底1的后表面。蚀刻气体可以在靠近生长衬底1的后表面处的蚀刻反应区域110R中与生长衬底1反应,并且逐渐地去除生长衬底1。
通过蚀刻反应产生的蚀刻产物气体可以通过基座110的出气口110h排放至内衬112外部。
内衬112内部还可以设置扩散板116。扩散板116可以使蚀刻气体均匀地分布在由内衬112包围的整个蚀刻环境中,并均匀地供应至生长衬底1的整个后表面。
用于供应沉积气体以形成目标材料层3的气体供应单元130和气体喷嘴132可以设置在生长衬底1上方。目标材料的前体气体、载气、反应气体、净化气体等可以同时或依次通过气体供应单元130和气体喷嘴132供应。
任何未用于形成目标材料层3的剩余气体和通过出气口110h排放到内衬112外部的气体可以通过排出管线150排放到衬底制造设备100的外部。这些气体可以通过用于捕获固体异物(例如,颗粒)的过滤器160排放到衬底制造设备100的外部。
沉积反应和蚀刻反应可以依次或同时执行。在一些实施例中,可以在沉积反应进行了一部分使得部分地形成了目标材料层3之后再开始蚀刻反应。蚀刻反应可持续到完全去除生长衬底1。
在图1中,基座110和内衬112可以限定蚀刻部分。沉积室壳体120在蚀刻部分之外的内部空间可以限定为沉积部分。生长衬底1可以放置在沉积部分和蚀刻部分之间。
生长衬底1(例如,硅衬底)和在生长衬底1上生长的目标材料层3(例如,GaN材料层)会具有较大的晶格常数差异和热膨胀系数差异,从而如果生长衬底1和目标材料层3同时冷却,则由于在生长衬底1和目标材料层3上施加了相当大的应力,目标材料层3会破裂。因此,通过在目标材料层3的形成期间或紧随其后去除生长衬底1,可以获得没有缺陷(比如,裂缝)的作为目标材料层3的自支撑衬底。
图2是示出根据另一实施例的基座110、基座盖114a和衬底1和3的组合关系的详细分解透视图。图3更详细地示出了示出基座110、基座盖114a和衬底1和3的组合关系的纵剖视图和平面图。如图所示,与图1不同,衬底1和3可以具有相同的直径,并且基座盖114a可以不与基座1重叠。
参考图2和图3,基座110可以具有位于其中心处的中心孔CH。当蚀刻气体通过中心孔CH接触生长衬底1时可以蚀刻生长衬底1。为了通过出气口110h将由蚀刻产生的蚀刻产物气体排放至内衬112(参见图1)外部,出气口110h可以从基座110的内侧壁110w贯穿至其外侧壁。
基座110可以包括沿着内侧壁110w的圆周朝向中心孔CH突出的支撑突出物110P_1。如图3中所示,生长衬底1和目标材料层3可以实质上由支撑突出物110P_1支撑。
支撑突出物110P_1沿着第三方向与生长衬底1重叠的一部分可以是生长衬底1的总面积的约25%或更少,在一些实施例中,是生长衬底1的总面积的约5%或更少,在一些其它实施例中,是生长衬底1的总面积的约3%或更少,并且在一些其它实施例中,是生长衬底1的总面积的约1%或更少。换言之,支撑突出物110P_1可以是中心孔CH和支撑突出物的总面积(例如,πr2,其中r是从中心孔CH的中心到支撑突出物远离中心孔CH侧的边缘(例如,内侧壁110w处)的半径)的约25%或更少。如在下面讨论的另外的实施例中所注明的那样,当这些突出物仅间隔地朝向中心孔CH突出和/或为生长衬底1提供非平面接触表面时,可以进一步减少这种重叠,特别是支撑突出物之间的接触面积。
在图2和图3中,支撑突出物110P_1示出为沿着基座110的内侧壁110w的整个圆周延伸。在一些实施例中,支撑突出物110P_1可以沿着基座110的内侧壁110w的圆周间隔地延伸。在生长衬底1被蚀刻气体完全蚀刻之后,支撑突出物110P_1上可仅支撑作为自支撑衬底的目标材料层3。
图4A更详细地示出了根据另一实施例的基座110、基座盖114b和衬底1和3的组合关系的纵剖视图和平面图。
参考图4A,基座110a可以包括具有柱状形状的支撑突出物110P_2,其沿着基座110a的内侧壁110w的圆周从内侧壁110w朝向中心孔CH间隔地突出和延伸,以替代沿着内侧壁110w的整个圆周延伸的支撑突出物110P_1。
可以例如考虑尺寸、重量等来选择适于支撑衬底1和3的支撑突出物110P_2的数量。例如,支撑突出物110P_2的数量可以是三个或更多个,并且在一些实施例中,是10个或更多个。此外,虽然支撑突出物110P_2示出为沿着基座110的内侧壁110w的圆周规律地间隔排列,但是,它们也可以不规律地间隔排列。
在图4A中,纵剖视图是沿着平面图中的线I-I'截取的。也就是说,在图4A的纵剖视图中,所示的支撑突出物110P_2从相对的内侧壁110w突出。如图4A的平面图所示,可以在各预定位置处布置多个出气口110h。在一些实施例中,出气口110h可以沿着圆周方向规律的间隔布置,例如,在相邻支撑突出物110P_2中间。在一些其它实施例中,出气口110h可以沿着圆周方向不规律的间隔布置。
如图4A所示,生长衬底1和目标材料层3可以实质上由支撑突出物110P_2支撑。
如图3的实施例中,在生长衬底1被蚀刻气体完全蚀刻之后,仅有目标材料层3可留下作为被多个支撑突出物110P_2支撑的自支撑衬底。在图4A的实施例中,蚀刻气体可以直接到达生长衬底1的边缘区域中除了接触支撑突出物110P_2的边缘区域的仅一小部分以外的那部分区域,使得可以更加快速地去除生长衬底1。生长衬底1的与支撑突出物110P_2相接触且受保护不被蚀刻的那部分很小,从而可以减少由于目标材料层3和生长衬底1之间的热膨胀系数的差异而导致的剩余应力或使其最小化。
在图2和图3的实施例中,基座110可以具有在第三方向上沿着其外部上表面延伸的突出部分110z,并且基座盖114a可以位于从突出部分110z向内的位置,使得突出部分110z和基座盖114a在径向或在第一方向和第二方向上重叠,而不在第三方向上重叠。然而,在图4A的实施例中,基座110a的整个上表面可以是平面的,使得基座盖114b可以与基座110a的整个上表面相对应,例如,可以在第三方向上与上表面完全重叠。在这种情况下,可以通过基座盖114b保护基座110a的整个上表面免于沉积材料,从而可以确保更有效的粒度管理。
图4B至图4E是示出根据实施例的具有不同形状的支撑突出物110P_2_C、110P_2_S、110P_2_R和110P_2_H的局部透视图。参考图4B,支撑突出物110P_2_C可以是具有圆形横截面的柱型形状。参考图4C,支撑突出物110P_2_S可以是具有矩形或正方形横截面的柱型形状。参考图4D,支撑突出物110P_2_R可以是具有菱形或平行四边形横截面的柱型形状。参考图4E,支撑突出物110P_2_H可以是具有六边形横截面的柱型形状。本领域技术人员应当理解,支撑突出物可以是具有除了图4B至图4E所示的那些横截面形状以外的任意其它横截面形状(例如,椭圆横截面形状或三角形横截面形状)的柱型形状。
图4C的支撑突出物110P_2_S可以与由支撑突出物110P_2_S支撑的生长衬底1面接触,而图4B、图4D和图4E的支撑突出物110P_2_C、110P_2_R和110P_2_H可以与由它们各自支撑的生长衬底1线接触。当生长衬底1与支撑突出物线接触时,和与支撑突出物面接触相比,可以通过蚀刻更加快速且完全地去除生长衬底1。
在一些实施例中,图4B、图4D和图4E的支撑突出物110P_2_C、110P_2_R和110P_2_H可以设置为使得支撑突出物110P_2_C、110P_2_R和110P_2_H面向中心孔CH的中心的端部以预定角度向上倾斜。当支撑突出物110P_2_C、110P_2_R和110P_2_H以预定角度向上倾斜时,生长衬底1可以与支撑突出物110P_2_C、110P_2_R和110P_2_H点接触,使得可以通过蚀刻更加快速且完全地去除生长衬底1。
因此,可以使用根据上述任一实施例的衬底制造设备来制造不存在回熔或破裂的大尺寸衬底。
图5是示出根据另一实施例的内衬112和基座110a的构造的纵剖视图。参考图5,可以在内衬112内部设置用于将生长衬底1从基座110a向上移动的提升支撑件119。提升支撑件119可以例如沿着第三方向相对于内衬112上下移动。
在一些实施例中,当提升支撑件119向上移动时,生长衬底1可以从基座110a升高。在一些实施例中,代替提升支撑件119向上移动,内衬112可以向下移动,使得生长衬底1可以从基座110a向上提升。
提升支撑件119接触生长衬底1的端部可以包括三个或更多分支端部。虽然图5的实施例中示出了具有支撑生长衬底1的分支端部的提升支撑件119,但是,提升支撑件119的端部可以具有支撑生长衬底1的任意其它形状(例如,盘状形状)。
当生长衬底1从基座110a向上移动、以预定角度旋转、然后通过提升支撑件119向下移回至基座110a上时,生长衬底1中由图4A至图4E的支撑突出物110P_2_C、110P_2_S、110P_2_R和110P_2_H覆盖的部分可以暴露于蚀刻气体。因此,提升支撑件119和/或基座110a可以构造为可旋转的。
在一些实施例中,可以升高提升支撑件119以将生长衬底1从基座110a移动到上方、以预定角度旋转、然后向下移动,使得生长衬底1再次由基座110a支撑。
在一些其它实施例中,在升高提升支撑件119以将生长衬底1从基座110a移动到上方之后,基座110a和内衬112可以以预定角度旋转,然后提升支撑件119可以向下移动,使得生长衬底1由基座110a支撑。
在一些其它实施例中,在基座110a和内衬112向下移动以将上面的生长衬底1从基座110a分离之后,提升支撑件119可以以预定角度旋转,然后基座110a和内衬112可以向上移动,使得生长衬底1由基座110a支撑。
在一些其它实施例中,在基座110a和内衬112向下移动以将上面的生长衬底1从基座110a分离之后,基座110a和内衬112可以以预定角度旋转,然后基座110a和内衬112可以向上移动,使得生长衬底1由基座110a支撑。
可以以预定时间间隔重复提升支撑件119和/或基座110a的向上和向下的移动以及内衬112向上和向下的移动。
虽然在上述实施例中,提升支撑件119可以向上和向下移动,或者基座110a和内衬112可以向上和向下移动,但是本领域技术人员应当理解,提升支撑件119、基座110a和内衬112可以配置为独立地向上和向下移动,以将生长衬底1从基座110a提升。
可以通过提升支撑件控制器119C控制向上和向下移动和旋转。本领域技术人员应当理解,可以使用适当的控制方法和制动器来控制提升支撑件119的旋转和向上和向下移动以及基座110a和内衬112的旋转和向上和向下移动。
图6A和图6B是示出根据实施例的基座盖114b和114c以及与基座盖114b和114c的形状相对应的目标材料层3和3'的形状的局部纵剖视图。
参考图6A,基座盖114b沿着第三方向可以不与生长衬底1重叠。也就是说,生长衬底1的整个上表面可以被基座盖114b暴露出来,并且目标材料层3可以形成在生长衬底1的暴露的上表面上。当基座盖114b的内径大于生长衬底1的直径时,可称为外盖(cover-out)构造。
然而,当生长衬底1的外侧边缘和基座盖114b的内侧边缘之间沿着第一方向的间隙距离D1过大时,蚀刻产物气体会通过生长衬底1的外侧边缘和基座盖114b的内侧边缘之间的间隙距离D1泄露。
蚀刻产物气体可以包括少量剩余未反应的蚀刻气体,从而蚀刻气体会通过间隙距离D1泄露,通过扩散或对流到达目标材料层3的表面,并因而蚀刻目标材料层3的表面。这会损害目标材料层3的表面,并且是不期望的。因此,为了防止蚀刻产物气体的这种泄露,生长衬底1的外侧边缘和基座114b的内侧边缘之间的间隙距离D1可以为约5mm或更小。
参考图6B,基座盖114c可以沿第三方向与生长衬底1部分重叠。也就是说,生长衬底1除了生长衬底1的边缘区域以外的上表面部分可以被基座盖114c暴露出来,并且目标材料层3'可以形成在生长衬底1的暴露的上表面上。当基座盖114c的内径小于生长衬底1的直径时,可称为内盖(cover-in)构造。
当生长衬底1的边缘区域被基座盖114c覆盖时,可以防止由于蚀刻产物气体的泄露而导致的目标材料层3'的蚀刻或者使其实质上最小化。然而,在基座盖114c的内侧边缘附近的沉积反应会相对不足,从而影响目标材料层3'的蚀刻,使得目标材料层3'具有如图6B中所示的倾斜的边缘。
换言之,当基座盖114c和生长衬底1之间的重叠部分过宽时,目标材料层3'的有效面积会显著减少。为了获得足够的目标材料层3'的有效面积,基座盖114c和生长衬底1之间的沿着第一方向的重叠部分的宽度D2可以减小至例如约5mm或更小。
图7A是根据另一实施例的基座盖114d的透视图。图7B是概念性地示出当使用图7A的基座盖114d时的蚀刻部分的纵剖视图。
参考图7A和图7B,基座盖114d可以具有作为主体的平坦部分114s和具有预定厚度的支柱部分114leg,支柱部分114leg在平坦部分114s的下表面上沿第三方向延伸并且在径向上间隔开(例如,规律地间隔)。
当基座盖114d放置在基座110a上时,支柱部分114leg可以支撑平坦部分114s,而每两个邻近的支柱部分114leg可以在平坦部分114s和基座110a之间形成空间。
蚀刻产物气体可以通过出气口110h排出(VENT1)。当使用基座盖114d时,蚀刻产物气体可以通过出气口110h(VENT1)以及平坦部分114s和基座110a之间的空间(VENT2)更加快速地排出。
由于蚀刻产物气体通过图7B中的VENT1和VENT2所指定的路径快速排出,因此通过生长衬底1的外侧边缘和基座盖114d的内侧边缘之间的间隙空间的蚀刻产物气体排出VENT3可以显著减少,使得可以显著地减少目标材料层3的质量劣化。
图8是概念性地示出根据实施例的基座110a'和基座盖114b的耦接的分解透视图。参考图8,基座110a'可以具有位于在其上表面上的多个支撑凸块110x作为与图7A和图7B的支柱部分114leg相对应的突出物。因此,可以不需要基座盖114的支柱部分114leg。基座盖114b可以与相应的支撑凸块110x对准以提供沿着第三方向的附加间隙空间,或者可以沿着圆周与支撑凸块110x间隔分开以进一步划分间隙空间。来自图8的基座110a'的效果与来自参考图7A和图7B所描述的实施例的效果可实质上相同,因此,将省略其冗余描述。
图9A是示出根据另一实施例的基座110b的结构的透视剖视图。图9B是示出在图9A的基座110b上支撑的生长衬底1之上形成目标材料层3的平面图。图9C和图9D是示出通过蚀刻去除生长衬底1而引起的变化的纵剖视图。
参考图9A,基座110b可以具有位于基座110b的内侧壁上的支撑突出物110P。支撑突出物110P可以包括沿着内侧壁110w的圆周从内侧壁110w突出的第一部分110P_1a和从第一部分110P_1a朝向中心孔CH以柱型形状间断地延伸的第二部分110P_2a。
第一部分110P_1a可以具有第一部分侧壁110P_1w,并且第二部分110P_2a可以具有第二部分侧壁110P_2w。生长衬底1可以放置在支撑突出物110P上。
在下文中,将描述生长具有无回熔的预定结构的衬底的实施例。首先,将描述可以在生长衬底1上生长的层的结构。
参考图9C,缓冲层2可以形成在生长衬底1之上。以上在参考图1描述的实施例中描述了用于形成缓冲层2的材料、形成缓冲层2的方法和目的以及缓冲层2的尺寸,因此,将省略其详细描述。
具有预定厚度的绝缘层可以形成在缓冲层2之上。可以使用化学气相沉积(CVD)、喷溅或蒸发方法来形成绝缘层。绝缘层可以具有约几纳米(nm)至几十微米(μm)的厚度。绝缘层可以由二氧化硅、氮化硅、氧化铝、铪等形成。
可以通过光刻来图案化绝缘层,以在缓冲层2的上表面边缘区域中形成绝缘层图案4。绝缘层图案4可具有环形形状。可以通过湿法蚀刻或干法蚀刻来执行绝缘层的图案化。绝缘层图案4可以具有约0.5mm至约5mm的宽度。绝缘层图案4可形成以覆盖缓冲层2的上表面边缘区域中的裂缝。
可以通过使用氢化物气相外延(HVPE)方法来在缓冲层2上生长目标材料层3(例如,GaN层)。与金属有机物化学气相沉积(MOCVD)相比,当使用HVPE方法时,GaN的生长速率可以更快。因此,HVPE方法可以用于有效地生长大面积的、厚的GaN层。通过在HVPE反应器中与氯化氢(HCl)和Ga金属反应形成氯化镓(GaCl)之后,GaCl可以与NH3反应以在缓冲层2上生长作为目标材料层3的GaN层。
目标材料层3的生长温度可以为约950℃至约1100℃。目标材料层3可以具有约5μm至约2mm的厚度。
当使用HVPE方法时,可以在缓冲层2上生长目标材料层3(在本文中,也称为单晶目标材料层3)(例如,单晶GaN层),并且可以在绝缘层图案4上生长多晶材料层5(例如,多晶GaN层)。
单晶目标材料层3和多晶材料层5可以容易地彼此分层。多晶材料层5可以容易地与单晶目标材料层3分离。绝缘层图案4上的多晶材料层5和与绝缘层图案4下面的缓冲层2的相对应的部分可以容易地分离。
参考图9B和图9C,绝缘层图案4的内侧边缘(换句话说,单晶目标材料层3和多晶材料层5之间的边界)可以在支撑突出物110P的第二部分110P_2a之上。因此,如上所述,在多晶材料层5与单晶目标材料层3分离之后,单晶目标材料层3仍然可以由第二部分110P_2a支撑。
如图9B所示,由于生长衬底1沿着圆周方向接触支撑突出物110P的第一部分110P_1a,所以用于生长衬底1的蚀刻气体可能不会朝向目标材料层3泄漏。因此,可以获得未损坏的质量好的自支撑衬底。
参考图9C和图9D,当其上具有缓冲层2和绝缘层4的生长衬底1由基座110b支撑的同时使用例如HVPE方法来形成目标材料层时,多晶材料层5也可以与单晶目标材料层3一起形成。
同时或依次地,可以使用蚀刻气体来去除生长衬底1。可以使用蚀刻气体来逐渐去除生长衬底1,直到生长衬底1被完全去除,使得缓冲层2留下作为最下层,如图9D所示出的那样。
然后,如上所述,单晶目标材料层3和多晶材料层5的彼此分离可以在其间的由图9D中的“CR”表示的边界处发生。因此,单晶目标材料层3可以留下作为由支撑突出物110P的第二部分110P_2a支撑的单个自支撑衬底。
通常,回熔现象(即,生长衬底1的构成元素通过缓冲层2中的裂纹扩散)会主要发生在生长衬底1的边缘区域中。在实施例中,可以在可能频繁发生这种回熔的区域中形成绝缘层图案4,然后,稍后将绝缘层图案4去除,由此可以获得具有很少甚至没有回熔的自支撑衬底。
图10是概念性地示出根据另一实施例的制造大尺寸衬底的衬底制造设备200的纵剖视图。除了衬底制造设备200还可以包括用于将蚀刻产物气体从内衬112的内部排放到外部的排气管道201之外,图10的实施例与图1的实施例类似。将针对与图1的实施例的不同之处来描述图10的实施例。
参考图10,排气管道201可以设置在内衬112内部。排气管道201可以收集蚀刻产物气体,并且用作用于向外排放蚀刻产物气体的路径。
挡板203可以设置在排气管道201的面向生长衬底1的下表面的端部处。挡板203可以从排气管道201的端部径向延伸。例如,挡板203可以向下倾斜,使得挡板203和生长衬底1之间的距离在远离排气管道201的中心轴线的方向上增加。
挡板203的这种倾斜布置的原因在于:蚀刻相关的反应在接近生长衬底1的中心处更活跃,并且朝向生长衬底1的边缘区域相对不活跃。
可以出于其它目的来调节挡板203的倾斜角度。例如,如果需要的话,挡板203可以向上倾斜,使得挡板203和生长衬底1之间的距离在远离排气管道201的中心轴线的方向上减小。
蚀刻产物气体可以通过包括挡板203和排气管道201的排气管210向外排放。例如,蚀刻产物气体可以通过用于捕获固体异物(例如,可以处于蚀刻产物气体中的颗粒)的过滤器260。
在图1的实施例中,蚀刻产物气体会与从沉积部分排出的气体一起通过过滤器160,使得过滤器160可以具有相对短的维护间隔期。然而,在图10的实施例中,蚀刻产物气体和从沉积部分排出的气体可以各自分别通过过滤器260和160,使得过滤器260和160可以具有相对长的维护间隔期。
图11是概念性地示出根据另一实施例的自支撑衬底制造设备300的示意图。参考图11,自支撑衬底制造设备300可大致分为两部分,即,材料层可在其中沉积在支撑在基座11a上的衬底上的沉积部分D和支撑在基座110a上的衬底可以在其中被原位去除的蚀刻部分E。
蚀刻部分E可以与由图1和图10中的内衬112和基座110(110a,110b)限定的空间相对应。沉积部分D可以与图1和图10中的沉积室壳体120的内部空间(即,内衬112的外部空间)相对应。图11是蚀刻部分E和沉积部分D的概念示图,因此图11中所示的蚀刻部分E和沉积部分D形状看起来会不同于图1和图10中所示的蚀刻部分和沉积部分的形状。
可以在蚀刻部分E和沉积部分D之间设置作为用于生长衬底1的支撑体的基座110a。也就是说,支撑在基座110a上的生长衬底1可以将蚀刻部分E与沉积部分D彼此分开。可以在生长衬底1与沉积部分D相对的表面上沉积材料层(例如,GaN材料层),并且可以对生长衬底1与蚀刻部分E相对的另一表面进行蚀刻。
可以由连接到蚀刻部分E和沉积部分D两者的控制器301执行这些处理。在一些实施例中,蚀刻部分E中的蚀刻和沉积部分D中的沉积实质上可以各自独立地执行。在一些实施例中,除了沉积部分D中的沉积的开始先于蚀刻部分E中的蚀刻的开始之外,蚀刻部分E中的蚀刻和沉积部分D中的沉积实质上可以各自独立地执行。
图12是根据实施例的制造自支撑衬底的方法的流程图。
参考图12,可以在沉积室壳体中设置生长衬底(S110)。例如,如上面参考图1所描述的那样,生长衬底1可以设置在沉积室壳体120中,具体地,设置在沉积室壳体120中的基座110上。生长衬底1可以用作制造目标自支撑衬底(例如,GaN衬底)的基底。
随后,可以在生长衬底上形成目标材料层(S120)。例如,如上面参考图1所描述的那样,可以通过例如HVPE方法在生长衬底1上形成目标材料层3。目标材料层3可以是例如GaN材料层。上面参考图1描述了该处理的细节,因此,将省略其冗余描述。
可以通过蚀刻去除生长衬底1(S130)。在图12的流程图中,在生长衬底1上形成目标材料层3的步骤(S120)接着通过蚀刻去除生长衬底1的步骤(S130)。然而,可以在形成目标材料层3的步骤(S120)结束之前执行通过蚀刻去除生长衬底1的步骤(S130)。将参照图13A至图13C对此进行更详细地描述。
图13A至图13C是示出通过“沉积”在生长衬底1上形成目标材料层3的步骤(S120)和通过“蚀刻”去除生长衬底1的步骤(S130)的时间顺序的时序图。
参考图13A,沉积处理可以在时间t1处开始并在时间t2处结束。蚀刻处理可以在时间t2之后开始,并且在完成了对生长衬底1蚀刻预定时间段之后结束。换言之,图13A的时序图是在完成目标材料层3的形成之后开始去除生长衬底1的情况。
参考图13B,沉积处理可以在时间t1处开始并在时间t2处结束。蚀刻处理可以在沉积处理结束之前开始,并且在从沉积处理结束时的时间t2处起的预定时间段之后结束。换言之,图13B的时序图是在完成目标材料层3的形成之前开始去除生长衬底1并且在从目标材料层3的形成结束起的预定时间段之后结束去除生长衬底1的情况。
参考图13C,如上述实施例中所描述的那样,沉积处理可以在时间t1处开始并在时间t2处结束。可以在沉积处理开始之后开始蚀刻处理,并且在沉积工艺结束的时间t2之前结束蚀刻处理。图13C的时序图是在完成目标材料层3的形成之前开始并结束去除生长衬底1的情况。换言之,当部分地形成目标材料层3时,可以开始去除支撑目标材料层3的生长衬底1,并且可以在完成目标材料层3的形成之前完成去除生长衬底1。
如上所述,只要蚀刻生长衬底1的起始在时间t1之后,使得可以在去除开始之前至少部分地形成目标材料层3,就可以不必在目标材料层3的形成(S120)完成之后才通过蚀刻去除生长衬底1(S130)。
图14是根据另一实施例的制造自支撑衬底的方法的流程图。参考图14,可以在沉积室壳体中设置第一衬底(S210)。第一衬底可以与上面参照图12所描述的生长衬底1相对应,因此将省略其冗余描述。
随后,可以在第一衬底上形成第二衬底材料层(S220)。第二衬底材料层可以是作为介质的材料层,所述介质有助于在第一衬底和稍后将形成在第二衬底材料层上的第三衬底材料层之间以低缺陷密度进行外延生长。在一些实施例中,可以将第二衬底材料层的材料选择为其晶格常数在第一衬底的晶格常数和第三衬底材料层的晶格常数之间。在一些实施例中,当第三衬底材料层是GaN材料层时,第二衬底材料层可以是例如AlN、AlGaN或InGaN层。
接下来,可以在第二衬底材料层上形成第三衬底材料层(S230)。第三衬底材料层可以与上面参照图12所描述的目标材料层3相对应,因此将省略其冗余描述。
接下来,可以通过蚀刻去除第一衬底(S240)。上面参照图12对去除第一衬底进行了描述,因此将省略其冗余描述。
接下来,可以通过蚀刻去除第二衬底材料层(S250)。可以使用与第一衬底所使用的方法基本相同的方法来执行通过蚀刻去除第二衬底材料层的步骤。例如,可以通过使第二衬底材料层的暴露表面与蚀刻气体(例如,Cl2气体和/或HCl气体)相接触来去除第二衬底材料层。
如上面参照图12所描述的实施例中的那样,可以以不同的顺序来执行图14中的操作S210至S250。例如,虽然图14的流程图示出了可以通过如下操作来制造自支撑衬底,即,提供第一衬底、然后形成第二衬底材料层、然后形成第三衬底材料层、然后去除第一衬底、然后去除第二衬底材料层,但是,也可以按照如下操作来制造自支撑衬底,即,提供第一衬底、然后形成第二衬底材料层、然后去除第一衬底、然后形成第三衬底材料层、然后去除第二衬底材料层。另外,操作S210到S250中的两个或更多个操作可以在时间上彼此重叠(例如,可以至少部分地同时执行)。
作为总结和回顾,一个或多个实施例可以提供一种用于制造没有回熔或破裂的大尺寸衬底的设备和方法。一个或多个实施例可以提供一种用于制造没有回熔或破裂的自支撑大尺寸衬底的设备和方法。具体地,一个或多个实施例可以通过将其上沉积了第二衬底(例如,目标材料)的第一衬底(例如,生长衬底)的与沉积了第二衬底的那个表面相对的表面暴露于蚀刻气体来去除第一衬底。可以在沉积期间和/或之后进行去除。
本文所描述的实施例的控制器可以在例如可以包括硬件、软件或两者的逻辑中实现。当至少部分地在硬件中实现时,控制器可以是例如包括(但不限于)专用集成电路、现场可编程门控阵列、逻辑门的组合、***芯片、微处理器的各种集成电路中的任何一种,或者是其他类型的处理或控制电路。
当至少部分地在软件中实现时,控制器可以包括例如用于存储待由例如计算机、处理器、微处理器、控制器或其它信号处理装置执行的代码或指令的存储器或其它存储装置。由于详细描述了形成了方法(或计算机、处理器、微处理器、控制器或其它信息处理装置的操作)的依据的算法,所以用于实施方法实施例的操作的代码或指令可以将计算机、处理器、控制器或其它处理装置转换为用于执行本文所述方法的专用处理器。
本文已经公开了示例性实施例,虽采用了特定术语,但它们仅以一般和描述性意义而非限制的目的来使用和解释。在一些情况下,除非另有明确说明,否则在提交本申请时的结合特定实施例所描述的特征、特性和/或元件可单独使用或与结合其它实施例所描述的特征、特性和/或元件组合使用对于本领域普通技术人员来说是显而易见的。因此,本领域技术人员应当理解,在不脱离如所附权利要求阐述的本发明的精神和范围的情况下,可以进行形式和细节上的各种改变。
Claims (20)
1.一种用于制造衬底的设备,所述设备包括:
沉积室壳体,其容纳生长衬底;
第一供应部,其将用于在生长衬底上形成目标衬底的沉积气体供应到沉积室壳体中;
基座,其支撑生长衬底并暴露出生长衬底的后表面;
内衬,其连接至基座;以及
第二供应部,其向生长衬底的后表面供应蚀刻气体,
其中,内衬将蚀刻气体与沉积气体隔离开,并且将蚀刻气体朝向生长衬底的后表面引导,
其中,基座包括:
中心孔,其暴露出生长衬底的后表面,以及
支撑突出物,其支撑生长衬底,支撑突出物从基座的限定了中心孔的内侧壁朝向中心孔的中心突出。
2.根据权利要求1所述的设备,其中,支撑突出物从所述内侧壁突出并沿着所述内侧壁的圆周延伸。
3.根据权利要求1所述的设备,其中,支撑突出物包括从所述内侧壁向所述中心孔的中心延伸的柱状突出物。
4.根据权利要求1所述的设备,其中,基座包括用于将蚀刻产物气体从内衬限定的内部区域排出的出气口,蚀刻产物气体是通过蚀刻生长衬底而产生的气体。
5.根据权利要求4所述的设备,其中,出气口从基座的内侧壁延伸穿过基座到基座的外侧壁。
6.根据权利要求5所述的设备,其中,基座包括沿着基座的圆周布置的多个出气口。
7.根据权利要求1所述的设备,还包括至少部分地覆盖基座的上表面的基座盖,
其中,基座盖暴露出生长衬底的上表面,并且基座盖的内边缘和生长衬底的外边缘之间的间隙为5mm或更小。
8.根据权利要求1所述的设备,还包括:
提升支撑件,其穿过基座的中心孔支撑生长衬底;
纵向移动单元,其在纵向方向上相对于内衬移动提升支撑件;以及
旋转单元,其相对于所述内衬旋转提升支撑件。
9.根据权利要求1所述的设备,其中,支撑突出物包括:
第一部分,其从所述内侧壁突出并且沿着所述内侧壁的圆周延伸;以及
第二部分,其从第一部分朝向所述中心孔的中心延伸成柱型形状。
10.根据权利要求9所述的设备,其中,生长衬底具有绝缘层图案,所述绝缘层图案具有沿着生长衬底的上表面的边缘区域的宽度,并且绝缘层图案的内边缘位于支撑突出物的第二部分之上。
11.根据权利要求1所述的设备,还包括内衬中的排气管,其将蚀刻产物气体从内衬限定的内部区域排出,所述蚀刻产物气体是通过蚀刻生长衬底而产生的气体。
12.根据权利要求11所述的设备,其中,
排气管的中心轴线朝着生长衬底的中心指向,并且
排气管包括挡板,其位于排气管道与生长衬底的后表面相对的端部处,并且从该处径向地延伸。
13.根据权利要求12所述的设备,其中,挡板向下倾斜以使得挡板和生长衬底之间的距离在远离排气管的中心轴线的方向增加。
14.根据权利要求1所述的设备,其中,生长衬底具有4英寸至18英寸的直径。
15.一种用于制造衬底的设备,所述设备包括:
沉积部分,在沉积部分中供应沉积气体以在包括在沉积部分中的第一衬底上沉积第二衬底材料层;
蚀刻部分,在蚀刻部分中供应蚀刻气体以通过蚀刻去除第一衬底;
支撑件,其位于沉积部分和蚀刻部分之间,其中,支撑件支撑第一衬底;以及
控制器,其控制第二衬底材料层的沉积和第一衬底的蚀刻,
其中,控制器
在开始供应蚀刻气体之前开始供应沉积气体,并且
供应沉积气体的时间和供应蚀刻气体的时间至少部分地重叠。
16.一种用于制造衬底的设备,所述设备包括:
支撑件,其支撑第一衬底,支撑件暴露出第一衬底的上表面和后表面;
沉积部分,在沉积部分中供应沉积气体以在第一衬底的上表面上沉积第二衬底材料层;
蚀刻部分,在蚀刻部分中供应蚀刻气体以通过蚀刻第一衬底的后表面来去除第一衬底;以及
隔离部分,其用于将蚀刻气体与沉积气体隔离。
17.根据权利要求16所述的设备,其中,支撑件包括:
中心孔,其暴露出第一衬底的后表面;以及
支撑突出物,其支撑第一衬底,支撑突出物从支撑件的限定了中心孔的内侧壁朝向中心孔的中心突出。
18.根据权利要求17所述的设备,其中,支撑突出物从所述中心孔的整个圆周延伸。
19.根据权利要求17所述的设备,其中,支撑突出物从所述中心孔的圆周间断地延伸。
20.根据权利要求17所述的设备,其中,所述支撑突出物的面积为所述中心孔加所述支撑突出物的总面积的25%或更少。
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