CN107653487A - A kind of recycling bin for being used in crystal growing process reclaim iridium powder - Google Patents
A kind of recycling bin for being used in crystal growing process reclaim iridium powder Download PDFInfo
- Publication number
- CN107653487A CN107653487A CN201710992079.4A CN201710992079A CN107653487A CN 107653487 A CN107653487 A CN 107653487A CN 201710992079 A CN201710992079 A CN 201710992079A CN 107653487 A CN107653487 A CN 107653487A
- Authority
- CN
- China
- Prior art keywords
- iridium
- growing process
- crystal growing
- recycling bin
- pot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004064 recycling Methods 0.000 title claims abstract description 18
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 46
- 239000011229 interlayer Substances 0.000 claims abstract description 9
- 239000012774 insulation material Substances 0.000 claims abstract description 5
- 230000013011 mating Effects 0.000 claims abstract description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 11
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 11
- 229940043774 zirconium oxide Drugs 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 230000001464 adherent effect Effects 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 6
- -1 bottom plate(21) Chemical compound 0.000 abstract description 2
- 238000000746 purification Methods 0.000 abstract description 2
- 101100298222 Caenorhabditis elegans pot-1 gene Proteins 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of recycling bin for being used in crystal growing process reclaim iridium powder, including bottom plate（21）, bottom plate（21）Top is flexibly connected insulating tube（22）, bottom plate（21）Lay bed course in top（25）, bed course（25）It is arranged on insulating tube（22）Inner side, in bed course（25）Place iridium pot in top（1）, iridium pot（1）Including base（11）, base（11）Upside mating connection pipe（12）, iridium pot（1）Outside and insulating tube（22）And bed course（25）Between form interlayer（23）, in interlayer（23）Interior filling insulation material.Advantages of the present invention：A kind of recycling bin for being used in crystal growing process reclaim iridium powder provided by the present invention, good heat insulating, the thermal field in crystal oven can accurately be controlled, good environment is provided for the stable growth of crystal, the volatilization of iridium powder in crystal growing process can be controlled, secondary purification can be carried out to the iridium in raw material, reduce the loss of raw material after the completion of crystal growth.
Description
Technical field
The present invention relates to technical field of crystal growth, more particularly to a kind of time for being used in crystal growing process reclaim iridium powder
Receive bucket.
Background technology
YAG belongs to tetragonal crystal system, generally uses melt Czochralski grown monocrystalline, and crystal is grown in iridium pot, and YAG crystal needs
Grow in high temperature environments, during high-temperature operation, the volatilization of big content of starting materials will necessarily be caused, crystal in existing recycling bin
Iridium during growth in raw material can largely be volatilized, and secondary use can not be carried out to the iridium vapored away after crystal growth is complete,
The wasting of resources of iridium can be so caused, makes cost greatly increase.
The content of the invention
The invention aims to solve shortcoming present in prior art, and the one kind proposed is used for crystal growth mistake
The recycling bin of iridium powder is reclaimed in journey.
To achieve these goals, present invention employs following technical scheme：
A kind of recycling bin for being used in crystal growing process reclaim iridium powder, it is characterised in that：It is movable above bottom plate including bottom plate
Insulating tube is connected, bed course is laid above bottom plate, bed course is arranged on the inside of insulating tube, and iridium pot is placed above bed course, and iridium pot includes
Base, base upside mating connection pipe, forms interlayer between iridium pot outside and insulating tube and bed course, insulation is filled in interlayer
Material.
Preferably, protection shell is provided with the outside of the iridium pot, fills and is incubated in the gap between iridium pot and protection shell
Layer, is provided with adherent layer on the inside of iridium pot.
Preferably, the heat-insulation layer is zirconia layer.
Preferably, iridium pot cover is flexibly connected on the upside of the iridium pot, iridium pot cover center is provided with through hole.
Preferably, both sides are arranged with handle above the iridium pot cover.
Preferably, annular groove is provided with the pipe or chassis outer side, firing ring is provided with annular groove.
Preferably, the bed course is that Zirconium oxide powder laying forms.
Preferably, the insulating tube is tubular zirconium-oxide.
Preferably, the insulation material uses Zirconium oxide powder.
The advantage of the invention is that：A kind of recycling bin for being used in crystal growing process reclaim iridium powder provided by the present invention
Good heat insulating, the thermal field in crystal oven can be accurately controlled, provide good environment for the stable growth of crystal, can control
The volatilization of iridium powder in crystal growing process processed, absorbs to the iridium to be volatilized in crystal growing process, energy after the completion of crystal growth
The enough iridium in raw material carries out secondary purification, reduces the loss of raw material.
Brief description of the drawings
Fig. 1 is the basic structure schematic diagram of the present invention；
Fig. 2 is the structural representation of iridium pot；
Fig. 3 is the attachment structure schematic diagram of base and pipe
Fig. 4 is the structural representation of iridium pot cover.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, a kind of time for being used in crystal growing process reclaim iridium powder provided by the invention
Receive bucket, it is characterised in that：Including bottom plate 21, insulating tube 22 is placed in the top of bottom plate 21, and insulating tube 22 is using oxidation in the present embodiment
Zirconium pipe.The top of bottom plate 21 laying bed course 25, bed course 25 are that Zirconium oxide powder laying forms.Bed course 25 is arranged in insulating tube 22
The lower inside of insulating tube 22 is paved with by side, Zirconium oxide powder, laying depth 10mm-20mm.
Iridium pot 1 is placed above bed course 25, iridium pot 1 includes base 11, and base 11 is bowl structure.Weld the upside of base 11
Pipe 12, annular groove 13 is provided with pipe 12 or the outside of base 11, firing ring is provided with annular groove 13, firing ring uses
Prior art, annular groove 13 preferably is set in the outer wall of pipe 12 in the present embodiment.
Protection shell 3 is provided with the outside of iridium pot 1, protection shell 3 is what cast iron, carbon steel or stainless steel were made.
Filling heat insulating wall 2 in gap between iridium pot 1 and protection shell 3, heat-insulation layer 2 are that zirconium oxide filling forms.Set in the inner side of iridium pot 1
There is adherent layer 4, adherent layer 4 is that polytetrafluoroethylene (PTFE) or CM-C type material sprayings form.
Iridium pot cover 5 is flexibly connected in the upside of iridium pot 1, the center of iridium pot cover 5 is provided with through hole 5.1, and through hole 5.1 is crystal oven intracavitary
Lifting arm and the crystal resigning hole after growing up to, the top both sides of iridium pot cover 5 are arranged with handle 5.2, and handle 5.2 facilitates operating personnel
Remove iridium pot cover 5.
Interlayer 23 is formed between the outside of iridium pot 1 and insulating tube 22 and bed course 25, the filling insulation material in interlayer 23, insulation
Material uses Zirconium oxide powder.
Because YAG crystal needs to grow in high temperature environments, in crystal growing process, substantial amounts of volatility of raw material, iridium are caused
Volatilization it is especially serious, crystal grows in this recycling bin, and the iridium part evaporated can mix with the zirconium oxide in interlayer 23
Close, another part can be attached on the tube wall of insulating tube 22.After the completion of crystal growth, iridium is carried out by corresponding technique secondary
Withdraw deposit, greatly reduce the loss of iridium, so as to reduce cost.
Claims (9)
- A kind of 1. recycling bin for being used in crystal growing process reclaim iridium powder, it is characterised in that：Including bottom plate（21）, bottom plate （21）Top is flexibly connected insulating tube（22）, bottom plate（21）Lay bed course in top（25）, bed course（25）It is arranged on insulating tube（22） Inner side, in bed course（25）Place iridium pot in top（1）, iridium pot（1）Including base（11）, base（11）Upside mating connection pipe （12）, iridium pot（1）Outside and insulating tube（22）And bed course（25）Between form interlayer（23）, in interlayer（23）Interior filling thermal insulating material Material.
- A kind of 2. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 1, it is characterised in that： The iridium pot（1）Outside is provided with protection shell（3）, in iridium pot（1）With protecting shell（3）Between gap in filling heat insulating wall （2）, in iridium pot（1）Inner side is provided with adherent layer（4）.
- A kind of 3. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 2, it is characterised in that： The heat-insulation layer（2）For zirconia layer.
- A kind of 4. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 1, it is characterised in that： In the iridium pot（1）Upside is flexibly connected iridium pot cover（5）, iridium pot cover（5）Center is provided with through hole（5.1）.
- A kind of 5. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 4, it is characterised in that： In the iridium pot cover（5）Top both sides are arranged with handle（5.2）.
- A kind of 6. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 1, it is characterised in that： In the pipe（12）Or base（11）Outside is provided with annular groove（13）, in annular groove（13）It is interior to be provided with firing ring.
- A kind of 7. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 1, it is characterised in that： The bed course（25）Formed for Zirconium oxide powder laying.
- A kind of 8. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 1, it is characterised in that： The insulating tube（22）For tubular zirconium-oxide.
- A kind of 9. recycling bin for being used in crystal growing process reclaim iridium powder according to claim 1, it is characterised in that： The insulation material uses Zirconium oxide powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710992079.4A CN107653487A (en) | 2017-10-23 | 2017-10-23 | A kind of recycling bin for being used in crystal growing process reclaim iridium powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710992079.4A CN107653487A (en) | 2017-10-23 | 2017-10-23 | A kind of recycling bin for being used in crystal growing process reclaim iridium powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107653487A true CN107653487A (en) | 2018-02-02 |
Family
ID=61118906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710992079.4A Pending CN107653487A (en) | 2017-10-23 | 2017-10-23 | A kind of recycling bin for being used in crystal growing process reclaim iridium powder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107653487A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080000413A1 (en) * | 2004-12-22 | 2008-01-03 | Tokuyama Corporation | Metal Fluoride Single Crystal Pulling Apparatus and Process for Producing Metal Fluoride Single Crystal With the Apparatus |
| JP2008007353A (en) * | 2006-06-28 | 2008-01-17 | Sumitomo Metal Mining Co Ltd | Apparatus for growing sapphire single crystal and growing method using the same |
| WO2008086705A1 (en) * | 2006-12-29 | 2008-07-24 | Jiaxing University | Crystal producing system used in temperature gradient method by rotating multiple crucibles |
| JP2012132071A (en) * | 2010-12-22 | 2012-07-12 | Tanaka Kikinzoku Kogyo Kk | Method for preventing volatilization loss in high temperature apparatus |
| JP2013060352A (en) * | 2011-09-13 | 2013-04-04 | Cs Gijutsu Kenkyusho:Kk | Crucible furnace |
| CN103074685A (en) * | 2013-02-01 | 2013-05-01 | 中山大学 | High concentration Nd-doped YAG laser crystal growth method |
| CN202945378U (en) * | 2012-11-14 | 2013-05-22 | 福建华科光电有限公司 | Heat insulation device for growth of YVO4 crystal |
| CN103602942A (en) * | 2013-11-18 | 2014-02-26 | 中国科学院上海硅酸盐研究所 | Method for protecting precious metal crucible by coating crucible with high temperature resistant coating |
| CN106480493A (en) * | 2015-08-27 | 2017-03-08 | 中国科学院上海硅酸盐研究所 | A kind of New Heating for crystal growth |
| CN207331107U (en) * | 2017-10-23 | 2018-05-08 | 安徽中晶光技术股份有限公司 | A kind of recycling bin for being used in crystal growing process recycle iridium powder |
-
2017
- 2017-10-23 CN CN201710992079.4A patent/CN107653487A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080000413A1 (en) * | 2004-12-22 | 2008-01-03 | Tokuyama Corporation | Metal Fluoride Single Crystal Pulling Apparatus and Process for Producing Metal Fluoride Single Crystal With the Apparatus |
| JP2008007353A (en) * | 2006-06-28 | 2008-01-17 | Sumitomo Metal Mining Co Ltd | Apparatus for growing sapphire single crystal and growing method using the same |
| WO2008086705A1 (en) * | 2006-12-29 | 2008-07-24 | Jiaxing University | Crystal producing system used in temperature gradient method by rotating multiple crucibles |
| JP2012132071A (en) * | 2010-12-22 | 2012-07-12 | Tanaka Kikinzoku Kogyo Kk | Method for preventing volatilization loss in high temperature apparatus |
| JP2013060352A (en) * | 2011-09-13 | 2013-04-04 | Cs Gijutsu Kenkyusho:Kk | Crucible furnace |
| CN202945378U (en) * | 2012-11-14 | 2013-05-22 | 福建华科光电有限公司 | Heat insulation device for growth of YVO4 crystal |
| CN103074685A (en) * | 2013-02-01 | 2013-05-01 | 中山大学 | High concentration Nd-doped YAG laser crystal growth method |
| CN103602942A (en) * | 2013-11-18 | 2014-02-26 | 中国科学院上海硅酸盐研究所 | Method for protecting precious metal crucible by coating crucible with high temperature resistant coating |
| CN106480493A (en) * | 2015-08-27 | 2017-03-08 | 中国科学院上海硅酸盐研究所 | A kind of New Heating for crystal growth |
| CN207331107U (en) * | 2017-10-23 | 2018-05-08 | 安徽中晶光技术股份有限公司 | A kind of recycling bin for being used in crystal growing process recycle iridium powder |
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