CN203795018U - Thermal field for producing sapphire single crystal by edge-defined film-fed crystal growth method - Google Patents
Thermal field for producing sapphire single crystal by edge-defined film-fed crystal growth method Download PDFInfo
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- CN203795018U CN203795018U CN201320872381.3U CN201320872381U CN203795018U CN 203795018 U CN203795018 U CN 203795018U CN 201320872381 U CN201320872381 U CN 201320872381U CN 203795018 U CN203795018 U CN 203795018U
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- thermal field
- crystal
- insulation quilt
- graphite
- sapphire single
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- 239000013078 crystal Substances 0.000 title claims abstract description 76
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 39
- 239000010980 sapphire Substances 0.000 title claims abstract description 39
- 238000002109 crystal growth method Methods 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 39
- 239000010439 graphite Substances 0.000 claims abstract description 39
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 8
- 239000010935 stainless steel Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims description 27
- 239000011733 molybdenum Substances 0.000 claims description 27
- 238000013461 design Methods 0.000 abstract description 8
- 238000012544 monitoring process Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000035484 reaction time Effects 0.000 abstract description 2
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a thermal field for producing a sapphire single crystal by an edge-defined film-fed crystal growth method. The thermal field is characterized by comprising a stainless steel cylinder 1, a thermal insulation device, a cylindrical graphite heater 12, a crucible 8, a crystal growth die 14, a die fixing plate 6, a seed crystal seed inducing device and a guiding device which are connected in a detachable manner. The thermal field disclosed by the utility model has the advantages of modularized design and simple structure and is easily disassembled and assembled; since a window is formed in the side wall of the thermal field, the growth process of the crystal is easily monitored in real time by a CCD (Charge Coupled Device) video imaging monitoring system; the tests confirm that the thermal field has the advantages that the thermal-insulation performance is relatively good and the temperature and reaction time can preferably reach the requirement on crystal growth.
Description
Technical field
The design relates to guided mode method and produces sapphire single-crystal thermal field, belongs to sapphire production technical field.
Background technology
Sapphire (Sapphire) is a kind of aluminum oxide (α-Al
2o
3) monocrystalline, be called again corundum.Sapphire crystal has excellent optical property, mechanical property and chemical stability, intensity is high, hardness is large, resistance to erosion, can under the mal-condition that approaches 2000 DEG C of high temperature, work, thereby be widely used in the window material of infrared military installation, satellite spatial technology, high intensity laser beam.
The features such as sapphire has fusing point high (2045 DEG C), heat conduction is good, hardness is high, electrical insulating property is good, strong alkali-acid resistance burn into transmission region is wide, be widely used in the civil equipment such as mobile phone screen, minute surface, and be applied to guided missile dome, go straight up to the military enterprises such as arbor.
Sapphire crystal growth has several different methods, and the method generally adopting for businessman at present has kyropoulos, heat-exchanging method, guided mode method.
Kyropoulos is called for short KY method, its principle is first heating raw materials to be melted to formation melt to fusing point, touch bath surface with the seed crystal of monocrystalline again, in the solid-liquid interface of seed crystal and melt, start the monocrystalline of growth and the identical monoclinic crystal structure of seed crystal, seed crystal up promotes with speed slowly, after upwards lifting for some time, seed crystal forms brilliant neck, after the solidification rate at melt and seed crystal interface is stablized, seed crystal is not lifting, the mode of only controlling rate of cooling to reduce power makes monocrystalline down solidify gradually from top, finally forms a complete monocrystalline crystal ingot.After this, utilize and draw excellent mode, along C to drawing rod.The shortcoming of kyropoulos is: complicated operation, consistence are not high, yield rate is lower, be difficult for growth C to crystal, material use efficiency is low, growth cycle is long.In addition, kyropoulos seeding difficulty is large, to operator require high.
Heat-exchanging method, owing to using expensive helium as heat-exchange gas, cost is high, secondly, heat-exchanging method to equipment require high.Become N-type waferN still to need to draw rod cutting, growth cycle is long.
Guided mode method, i.e. " edge limited film feed growth " technology, is called for short EFG method, the crystal of the specified shape that is mainly used in growing.Guided mode method is due to the crystal such as slice, silk, pipe, rod, plate of directly growing from melt, and crystalline growth velocity is fast, size can accurately be controlled, greatly simplify the work program of crystal, save material, time and resource, reduce production costs, increase economic efficiency, be therefore subject to people's great attention.
Guided mode rule has that crystal growth cycle is short, size can accurately be controlled, material is saved, the simple feature of manufacturing procedure, thereby effectively increases economic efficiency, and becomes the most promising sapphire window sheet growth method.
Sapphire crystal growth energy consumption is huge, and thermal field plays keying action in sapphire growth process.Due to insulation problem, all there is the defect that energy consumption is higher in current thermal field, the novel thermal field of research and design, and reducing energy consumption and enhancing productivity is rapidly the vital task of sapphire crystal equipment vendor.Meanwhile, be equipped with video imaging system Real-Time Monitoring growth state of crystal, effectively control the growth of crystal, improve crystal mass.
Summary of the invention
For the deficiencies in the prior art, the design's object is to provide a kind of guided mode method and produces sapphire single-crystal thermal field.
For achieving the above object, the design realizes by following technique means:
A kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: described thermal field is drawn and sent device, guiding device to form by stainless steel cylinder 1, attemperator, round shape graphite heater 12, crucible 8, long brilliant mould 14, mold fixed plate 6, seed crystal; Above-mentioned each device adopts removably to connect;
Described attemperator is positioned at stainless steel cylinder 1 bottom, and described attemperator is made up of side insulation quilt 13, upper insulation quilt 5, end insulation quilt 11; Side insulation quilt 13 is by graphite bucket and be bundled in forming with the contour graphite soft felt of graphite bucket on graphite bucket, the round shape graphite that described upper insulation quilt 5, end insulation quilt 11 are built into by graphite cake also forms at the inner hard felt of graphite of filling of graphite, described upper insulation quilt 5 is positioned at side insulation quilt 13 tops, and insulation quilt of the described end 11 is positioned at at the bucket end of graphite bucket of side insulation quilt 13; In described attemperator, be provided with round shape graphite heater 12, in described round shape graphite heater 12, be provided with crucible 8; Long brilliant mould 14 is fixed in crucible 8 by mold fixed plate 6; Described guiding device is made up of annular guide shell 3 and the circular water-cooled bar molybdenum heat screen 15 that is positioned at annular guide shell 3 inwalls, described circular water-cooled bar molybdenum heat screen 15 middle part perforates, and described guiding device is positioned on insulation quilt 5; Described seed crystal draws and send device to be made up of water-cooled bar 16, molybdenum chuck 2 and seed crystal 4, and described molybdenum chuck 2 is connected with water-cooled bar 16, and described molybdenum chuck 2 bundlees seed crystal 4, and a part for described seed crystal 4 and described molybdenum chuck 2 is positioned at described guiding device.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: described circular water-cooled bar molybdenum heat screen 15 middle part perforates are square.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: the crucible mouth of described crucible 8 is step-like.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: below insulation quilt of the described end 11, be provided with leveling bolt.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: described leveling bolt is 3.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: the side at described thermal field is provided with viewing window 7.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: be provided with CCD imaging device at described viewing window 7.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: the number of described circular water-cooled bar molybdenum heat screen 15 is more than 2.
The invention has the beneficial effects as follows: thermal field of the present invention design all adopts modularization, simple in structure, be easy to dismounting; Sidewall is windowed, and adopts CCD video imaging supervisory system, is easy to Real-Time Monitoring crystal growing process;
This thermal field is through verification experimental verification, and heat-insulating property is better, and the reaction times of temperature can reach long brilliant demand preferably.
Brief description of the drawings
Fig. 1 is design composition structural section figure.
The implication of drawing reference numeral is as follows: 1, stainless steel cylinder, 2, molybdenum chuck, 3, guide shell, 4, seed crystal, 5, upper insulation quilt, 6, mold fixed plate, 7, viewing window, 8, crucible, 9, crucible tray, 10, crucible shaft, 11, end insulation quilt, 12, annular graphite heater, 13, side insulation quilt, 14, grow brilliant mould, 15, water-cooled bar molybdenum heat screen, 16, water-cooled bar.
Embodiment
Below in conjunction with Figure of description, design is further described.
As shown in Figure 1, a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: described thermal field is drawn and sent device, guiding device to form by stainless steel cylinder 1, attemperator, round shape graphite heater 12, crucible 8, long brilliant mould 14, mold fixed plate 6, seed crystal; Above-mentioned each device adopts removably to connect.
Described attemperator is positioned at stainless steel cylinder 1 bottom, and described attemperator is made up of side insulation quilt 13, upper insulation quilt 5, end insulation quilt 11; Side insulation quilt 13 is by graphite bucket and be bundled in forming with the contour graphite soft felt of graphite bucket on graphite bucket, the round shape graphite that described upper insulation quilt 5, end insulation quilt 11 are built into by graphite cake also forms at the inner hard felt of graphite of filling of graphite, described upper insulation quilt 5 is positioned at side insulation quilt 13 tops, and insulation quilt of the described end 11 is positioned at at the bucket end of graphite bucket of side insulation quilt 13; In described attemperator, be provided with round shape graphite heater 12, in described round shape graphite heater 12, be provided with crucible 8; Long brilliant mould 14 is fixed in crucible 8 by mold fixed plate 6; Described guiding device is made up of annular guide shell 3 and the circular water-cooled bar molybdenum heat screen 15 that is positioned at annular guide shell 3 inwalls, described circular water-cooled bar molybdenum heat screen 15 middle part perforates, and described guiding device is positioned on insulation quilt 5; Described seed crystal draws and send device to be made up of water-cooled bar 16, molybdenum chuck 2 and seed crystal 4, and described molybdenum chuck 2 is connected with water-cooled bar 16, and described molybdenum chuck 2 bundlees seed crystal 4, and a part for described seed crystal 4 and described molybdenum chuck 2 is positioned at described guiding device.
The inherent crucible 8 of stove bucket, end insulation quilt 11, side insulation quilt 13, has graphite heater 12 in upper insulation quilt 5, and for the thermograde of the raw material in heating crucible and control mould 14 tops, this Grad is 1 ~ 5 ° of C/mm.Insulation quilt is for maintaining the temperature at crucible and mould place.Top guide shell 3, for controlling the gradient of the crystal growing, reduces crystal stress.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: described circular water-cooled bar molybdenum heat screen 15 middle part perforates are square.
Affiliated top guide shell 3, for controlling the gradient of the crystal growing, reduces crystal stress.Affiliated water-cooled bar molybdenum heat screen 15, square opening, for stoping the calorific loss at mould 14 places and the baking of the heat at mould 14 places to water-cooled bar.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: the crucible mouth of described crucible 8 is step-like.
Affiliated crucible 8 openings are step-like, for the installation of retaining plate 6, with fixed mould 14.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: below insulation quilt of the described end 11, be provided with leveling bolt.
For the planeness of insulation quilt 11 at the bottom of leveling.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: described leveling bolt is 3.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: the side at described thermal field is provided with viewing window 7.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: be provided with CCD imaging device at described viewing window 7.
Viewing window 7 is for the monitoring of CCD imaging video, Real-Time Monitoring growth state of crystal.
Preferably, described a kind of guided mode method is produced sapphire single-crystal thermal field, it is characterized in that: the number of described circular water-cooled bar molybdenum heat screen 15 is more than 2.
To stop better the calorific loss at mould 14 places and the baking of the heat at mould 14 places to water-cooled bar.
More than show and described ultimate principle of the present utility model, principal character and advantage.The technician of the industry should understand; the utility model is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present utility model; do not departing under the prerequisite of the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (8)
1. guided mode method is produced a sapphire single-crystal thermal field, it is characterized in that: described thermal field is drawn and sent device, guiding device to form by stainless steel cylinder (1), attemperator, round shape graphite heater (12), crucible (8), long brilliant mould (14), mold fixed plate (6), seed crystal; Above-mentioned each device adopts removably to connect;
Described attemperator is positioned at stainless steel cylinder (1) bottom, and described attemperator is made up of side insulation quilt (13), upper insulation quilt (5), end insulation quilt (11); Side insulation quilt (13) is by graphite bucket and be bundled in forming with the contour graphite soft felt of graphite bucket on graphite bucket, the round shape graphite that described upper insulation quilt (5), end insulation quilt (11) are built into by graphite cake also forms at the inner hard felt of graphite of filling of graphite, described upper insulation quilt (5) is positioned at side insulation quilt (13) top, and insulation quilt of the described end (11) is positioned at at the bucket end of graphite bucket of side insulation quilt (13); In described attemperator, be provided with round shape graphite heater (12), in described round shape graphite heater (12), be provided with crucible (8); Long brilliant mould (14) is fixed in crucible (8) by mold fixed plate (6); Described guiding device is made up of annular guide shell (3) and the circular water-cooled bar molybdenum heat screen (15) that is positioned at annular guide shell (3) inwall, the perforate of described circular water-cooled bar molybdenum heat screen (15) middle part, and described guiding device is positioned on insulation quilt (5); Described seed crystal draws and send device to be made up of water-cooled bar (16), molybdenum chuck (2) and seed crystal (4), described molybdenum chuck (2) is connected with water-cooled bar (16), described molybdenum chuck (2) binding seed crystal (4), a part for described seed crystal (4) and described molybdenum chuck (2) is positioned at described guiding device.
2. a kind of guided mode method as claimed in claim 1 is produced sapphire single-crystal thermal field, it is characterized in that: described circular water-cooled bar molybdenum heat screen (15) middle part perforate is square.
3. a kind of guided mode method as claimed in claim 1 is produced sapphire single-crystal thermal field, it is characterized in that: the crucible mouth of described crucible (8) is step-like.
4. a kind of guided mode method as claimed in claim 1 is produced sapphire single-crystal thermal field, it is characterized in that: below insulation quilt of the described end (11), be provided with leveling bolt.
5. a kind of guided mode method as claimed in claim 4 is produced sapphire single-crystal thermal field, it is characterized in that: described leveling bolt is 3.
6. a kind of guided mode method as claimed in claim 1 is produced sapphire single-crystal thermal field, it is characterized in that: be provided with viewing window (7) in a side of described thermal field.
7. a kind of guided mode method as claimed in claim 6 is produced sapphire single-crystal thermal field, it is characterized in that: be provided with CCD imaging device at described viewing window (7).
8. a kind of guided mode method as claimed in claim 1 is produced sapphire single-crystal thermal field, it is characterized in that: the number of described circular water-cooled bar molybdenum heat screen (15) is more than 2.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104264214A (en) * | 2014-09-30 | 2015-01-07 | 元亮科技有限公司 | Growing device and growing process for growing of terbium gallium garnet crystals by virtue of guided mode method |
CN104264215A (en) * | 2014-10-15 | 2015-01-07 | 江苏中电振华晶体技术有限公司 | Sapphire crystal growing device adopting edge defined film-fed growth techniques and growing method |
CN104264213A (en) * | 2014-09-30 | 2015-01-07 | 元亮科技有限公司 | EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof |
CN104451879A (en) * | 2014-11-24 | 2015-03-25 | 河南晶格光电科技有限公司 | Sapphire ingot production process |
WO2022052081A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Universal mold for producing sapphire crystals by using edge-defined film-fed crystal growth method |
CN116716655A (en) * | 2023-06-14 | 2023-09-08 | 通威微电子有限公司 | Device and method for growing high-quality silicon carbide crystal and silicon carbide crystal |
CN116926669A (en) * | 2022-03-31 | 2023-10-24 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
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2013
- 2013-12-27 CN CN201320872381.3U patent/CN203795018U/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104264214A (en) * | 2014-09-30 | 2015-01-07 | 元亮科技有限公司 | Growing device and growing process for growing of terbium gallium garnet crystals by virtue of guided mode method |
CN104264213A (en) * | 2014-09-30 | 2015-01-07 | 元亮科技有限公司 | EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof |
CN104264215A (en) * | 2014-10-15 | 2015-01-07 | 江苏中电振华晶体技术有限公司 | Sapphire crystal growing device adopting edge defined film-fed growth techniques and growing method |
CN104264215B (en) * | 2014-10-15 | 2017-02-08 | 江苏中电振华晶体技术有限公司 | Sapphire crystal growing device adopting edge defined film-fed growth techniques and growing method |
CN104451879A (en) * | 2014-11-24 | 2015-03-25 | 河南晶格光电科技有限公司 | Sapphire ingot production process |
WO2022052081A1 (en) * | 2020-09-14 | 2022-03-17 | 南京同溧晶体材料研究院有限公司 | Universal mold for producing sapphire crystals by using edge-defined film-fed crystal growth method |
CN116926669A (en) * | 2022-03-31 | 2023-10-24 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
CN116926669B (en) * | 2022-03-31 | 2024-06-21 | 连城凯克斯科技有限公司 | Sapphire armor plate preparation mold, preparation device and manufacturing process |
CN116716655A (en) * | 2023-06-14 | 2023-09-08 | 通威微电子有限公司 | Device and method for growing high-quality silicon carbide crystal and silicon carbide crystal |
CN116716655B (en) * | 2023-06-14 | 2024-04-02 | 通威微电子有限公司 | Device and method for growing high-quality silicon carbide crystal and silicon carbide crystal |
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