CN107640735B - A kind of manufacturing method of functionization RF MEMS Switches - Google Patents
A kind of manufacturing method of functionization RF MEMS Switches Download PDFInfo
- Publication number
- CN107640735B CN107640735B CN201710605343.4A CN201710605343A CN107640735B CN 107640735 B CN107640735 B CN 107640735B CN 201710605343 A CN201710605343 A CN 201710605343A CN 107640735 B CN107640735 B CN 107640735B
- Authority
- CN
- China
- Prior art keywords
- layer
- mems switches
- silicon wafer
- preparation
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Micromachines (AREA)
Abstract
The present invention relates to MEMS device manufacturing field, in particular to the manufacturing method of practical RF MEMS Switches.It mainly include Wafer Cleaning, the growth of the surfaces nitrided silicon of high resistant silicon wafer, co-planar waveguide plating, the plating of top electrode pole plate, the production of aluminum pull-down electrode, sacrificial layer release.The RF MEMS Switches manufactured using technical solution of the present invention, contact electrode flatness is higher under RF MEMS Switches has that yield rate is relatively high, switch life is relatively long, and insertion loss is lower, isolation is higher.
Description
Technical field
The present invention relates to MEMS device manufacturing fields, and in particular to a kind of manufacturing method of functionization RF MEMS Switches.
Background technique
In the prior art, RF MEMS Switches are by metal-metal contact or gold as a kind of passive device
The capacitor that category-dielectric-metal is formed transmits or is isolated microwave signal, has insertion loss low, isolation height etc.
Advantage.From ubiquitous smart sensor's network, cell phone, test equipment equipment and military radar, RF MEMS are arrived
Switch has broad application prospects.In addition, RF MEMS Switches can largely reduce reconfigurable system size,
Weight and price become one indispensable important technology of 21 century.
Grow up although RFMEMS has begun in China, and external, such as the U.S., Europe, Japan and South Korea
The MEMS research of country and manufacturing ability are compared, and gap is also very big.
The existing main problem of domestic switch has at present: 1. plating CPW flatness are lower, seriously affected the microwave of switch
Characteristic；2. the weak contact problems of double-contact, seriously affect the service life of switch when causing to close the switch due to fabrication error.
In order to effectively solve the above problems, the present invention provides the manufacturing method of practical RF MEMS Switches.Increase gold
Belong to sputtering and improve lower electrode flatness, to improve the microwave property of switch；Lower electrode uses spring beam, effectively avoids
The weak contact problems of double-contact.
Summary of the invention
Concrete scheme of the invention is as follows: a kind of preparation method of functionization RF MEMS Switches, the preparation method are used
In preparing RF MEMS Switches, the preparation method comprises the following steps:
(1) silicon wafer is cleaned first using acetone, reuses isopropanol immersion, and be cleaned by ultrasonic 5-10 minutes；
(2) the PECVD deposit silicon nitride on the silicon wafer makes lower salient point, sputters tantalum nitride layer production isolation electricity later
Resistance, then sputtered aluminum layer production pull-down electrode, lead and pad electrode；
On silicon wafer deposit one layer of silicon nitride protective layer after, sputter titanium tungsten-gold, formed electroplating gold co-planar waveguide adhesion layer with
Seed layer；
(3) on the silicon wafer by step (2) processing, electroplating gold co-planar waveguide, and sacrificed by production sacrificial layer and release
Layer operation, plating form lower electrode, then carry out sacrificial layer release operation；
(4) after silicon wafer carries out lithography operations, it is sent into magnetic control platform, sputters one layer of smooth golden membranous layer；
(5) top electrode is formed, is then made annealing treatment, is obtained by production sacrificial layer and releasing sacrificial layer operation, plating
Obtain RF MEMS Switches component；
(6) by spin coating, photoetching, etching, encapsulation caps are made on another silicon wafer, and plate Sillim at the edge of encapsulation caps
Belong to layer；
(7) it in the switch block side of the silicon wafer by step (5) around deposit silicon nitride layer, and is powered in silicon nitride layer
Filled gold layer；
(8) encapsulation caps of step (6) and step (7) switch block are subjected to bonding operation, encapsulate switch block, and draw
Piece completes the production of RF MEMS Switches；
In step (2), electroplating gold forms golden co-planar waveguide；
Sacrificial layer and through-hole are formed by spin-on polyimide, photoetching, exposure；
In step (4), the golden membranous layer with a thickness of 45-60nm is sputtered in lower electrode surface.
In step (2), one layer of tantalum nitride is first sputtered, then successively carries out spin coating, photoetching and RIE etching, removal of removing photoresist
Extra tantalum nitride metal film layer operation；
Sputtered aluminum layer again, progress spin coating, photoetching and wet etching, removing photoresist removes extra aluminum metal film layer, system drop-down electricity
Pole, aluminum lead and aluminum pad electrode；
In step (3), (5), dry release is carried out to sacrificial layer using O2Plasma, release time needs at least 120
Minute.
Further, in step (2), lower salient point is made by spin coating, photoetching, etching.
Further, in step (3), (5), the lower electrode, top electrode are fixed by anchor point and co-planar waveguide.
Further, in step (7), one layer of silicon nitride ring is deposited at switch block edge, on the silicon nitride ring
Electroplating surface gold metal layer.
Further, in step (7), the bonding operation of gold metal layer and tin metal layer 280 DEG C at a temperature of carry out
Bonding.
Usefulness of the present invention: the RF MEMS Switches make lower electrode obtain preferable put down by sputtering au film coating
Whole degree improves yield rate and the service life of RF MEMS Switches, and the microwave property of RF MEMS Switches is good, and contact is sensitive,
It can be applied in all kinds of RF switch scenes.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, following embodiment carries out the present invention
It is described in further detail.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, it is not used to limit
The present invention.
On the contrary, the present invention covers any substitution done on the essence and scope of the present invention being defined by the claims, repairs
Change, equivalent method and scheme.Further, in order to make the public have a better understanding the present invention, below to of the invention thin
It is detailed to describe some specific detail sections in section description.Part without these details for a person skilled in the art
The present invention can also be understood completely in description.
This embodiment offers practical RF MEMS Switches manufacturing method, the functionization RF MEMS Switches manufacturer
Method includes the following steps.
(1) cleaning silicon chip: being cleaned using acetone first, is then impregnated using isopropanol, and is cleaned by ultrasonic five minutes；
(2) lower salient point and isolation resistance: the PECVD deposit silicon nitride on silicon wafer are made, by convex under photoetching, etching production
Silicon wafer is sent into magnetic control platform, sputters one layer of tantalum nitride by point, then successively carries out spin coating, photoetching and RIE etching, removes photoresist
Remove extra tantalum nitride metal film production isolation resistance；
(3) make pull-down electrode, lead and pad electrode: by step (2), treated that silicon wafer is sent into magnetic control platform,
Then sputtered aluminum layer carries out spin coating, photoetching and wet etching and makes pull-down electrode, aluminum lead and aluminum pad electrode processed；
(4) make separation layer: PECVD deposit silicon nitride forms separation layer；
(5) seed layer is formed: on step (4) treated silicon wafer, sputtering titanium tungsten-Jin Zuowei electroplating gold co-planar waveguide
Adhesion layer and seed layer；
(6) mask is made using photoresist: on step (5) treated silicon wafer, by even resist coating, carrying out at photoetching
Reason forms photoresist electroplating mold in silicon chip surface；
(7) make golden co-planar waveguide: by step (6) treated silicon wafer, electroplating gold, the gold for forming 2-2.8 μ m-thick is total
Surface wave is led；
(8) make sacrificial layer and through-hole: by step (7), treated that silicon wafer passes through spin-on polyimide, photoetching, exposure
Form the first sacrificial layer and through-hole；
(9) it makes lower electrode: on step (8) treated silicon wafer, continuing to be electroplated, form lower electrode and anchor point；
(10) it releasing sacrificial layer: on step (9) treated silicon wafer, carries out release first and sacrifices layer operation；
(11) sputter golden membranous layer: by step (10) treated silicon wafer, by by photoetching by the part in addition to lower electrode
It covers, is sent into magnetic control platform with photoresist, sputter golden membranous layer；
(12) sacrificial layer and through-hole are made: by step (11) treated silicon chip extracting；By spin-on polyimide, light
It carves, exposure forms the second sacrificial layer and through-hole；
(13) top electrode, anchor point are made: by step (12) treated silicon chip extracting, carrying out plating top electrode formation and powers on
Pole, anchor point；
(14) releasing sacrificial layer: by step (13) treated silicon wafer, the release operation of the second sacrificial layer is carried out；
(15) it by step (14) treated silicon chip extracting, is made annealing treatment, obtains RF MEMS Switches.
(16) encapsulation caps make: spin coating covers at the edge of encapsulation caps with photoresist, forms encapsulation by photoetching, etching
Cap, and one layer of metallic tin is plated at its edge；
(17) bonding prepares: by step (15) treated silicon chip extracting, depositing one layer of silicon nitride in each switching edge
Switch is trapped among wherein by ring, plates one layer of gold in the top of silicon nitride ring；
(18) wafer level packaging: step (17) treated silicon chip extracting is bonded with the silicon wafer in step (16)
Alignment, 280 DEG C at a temperature of be bonded.
(19) scribing completes the production the RF MEMS Switches.
Specifically, the acetone, isopropyl acetone in step (1) are the technique concentration of professional standard；
In step (2), the tantalum nitride isolation resistance sputtered on silicon wafer, the aluminium pad electrode for connecting driving electrodes can not
It is influenced by switched radio frequency signal；
Sputtering titanium tungsten-gold is the preparatory technology before electroplating technology in step (5), sputters titanium tungsten-Jin Zuowei adhesion layer and kind
Sublayer can increase the adhesiveness of electroplated layer；
The sputtering technology of sputtering golden membranous layer is the technological operation of industry internal standard in step (11), and this will not be repeated here, sputtering
The smooth of the lower electrode can be improved by sputtering the golden membranous layer in lower electrode surface with a thickness of 45-60nm in golden membranous layer
Degree, to improve the reliability of the RF MEMS Switches；
Sacrificial layer release operation in step (10), (14) is to utilize O2Plasma carries out dry release to sacrificial layer, releases
Put time needs at least 120min.
The RF MEMS Switches make lower electrode obtain preferable flatness by sputtering au film coating, promote RF MEMS
The yield rate of switch, the RF MEMS Switches service life is relatively long, and the radio-frequency performance of RF MEMS Switches is more excellent, switch contact spirit
It is quick, it can be applied in all kinds of RF switch scenes.
For the ordinary skill in the art, introduction according to the present invention, do not depart from the principle of the present invention with
In the case where spirit, changes, modifications, replacement and the deformation that embodiment is carried out still fall within protection scope of the present invention it
It is interior.
Claims (5)
1. a kind of preparation method of functionization RF MEMS Switches, the preparation method is used to prepare RF MEMS Switches, special
Sign is that the preparation method comprises the following steps:
(1) silicon wafer is cleaned first using acetone, reuses isopropanol immersion, and be cleaned by ultrasonic 5-10 minutes；
(2) the PECVD deposit silicon nitride on the silicon wafer makes lower salient point, sputters tantalum nitride layer later and makes isolation resistance, then
Sputtered aluminum layer makes pull-down electrode, lead and pad electrode；
After depositing one layer of silicon nitride protective layer on silicon wafer, titanium tungsten-gold is sputtered, forms the adhesion layer and seed of electroplating gold co-planar waveguide
Layer；
(3) on the silicon wafer by step (2) processing, electroplating gold co-planar waveguide, and pass through production sacrificial layer and releasing sacrificial layer behaviour
Make, plating forms lower electrode, then carries out sacrificial layer release operation；
(4) after silicon wafer carries out lithography operations, it is sent into magnetic control platform, sputters one layer of smooth golden membranous layer；
(5) top electrode is formed, is then made annealing treatment, is penetrated by production sacrificial layer and releasing sacrificial layer operation, plating
Frequency mems switch component；
(6) by spin coating, photoetching, etching, encapsulation caps are made on another silicon wafer, and in the edge tin metal of encapsulation caps
Layer；
(7) deposit silicon nitride layer, and the electroplating gold on silicon nitride layer are surround in the switch block side of the silicon wafer by step (5)
Metal layer；
(8) encapsulation caps of step (6) and step (7) switch block are subjected to bonding operation, encapsulate switch block, and scribing, it is complete
At the production of RF MEMS Switches；
In step (2), electroplating gold forms golden co-planar waveguide；
Sacrificial layer and through-hole are formed by spin-on polyimide, photoetching, exposure；
In step (4), the golden membranous layer with a thickness of 45-60nm is sputtered in lower electrode surface；
In step (2), one layer of tantalum nitride is first sputtered, spin coating, photoetching and RIE etching is then successively carried out, removes photoresist that it is extra to remove
Tantalum nitride metal film layer operation；
Sputtered aluminum layer again, carries out that spin coating, photoetching and wet etching, removing photoresist removes extra aluminum metal film layer, pull-down electrode processed, aluminium
Lead and aluminum pad electrode processed；
In step (3), (5), O is utilized2Plasma carries out dry release to sacrificial layer, and release time needs at least 120 minutes.
2. a kind of preparation method of practical RF MEMS Switches according to claim 1, which is characterized in that in step (2)
In, lower salient point is made by spin coating, photoetching, etching.
3. a kind of preparation method of practical RF MEMS Switches according to claim 1, which is characterized in that step (3),
(5) in, the lower electrode, top electrode are fixed by anchor point and co-planar waveguide.
4. a kind of preparation method of practical RF MEMS Switches according to claim 1, which is characterized in that in step (7)
In, one layer of silicon nitride ring is deposited at switch block edge, gold metal layer is electroplated in silicon nitride ring upper surface.
5. a kind of preparation method of practical RF MEMS Switches according to claim 1, which is characterized in that in step (7)
In, gold metal layer and the bonding operation of tin metal layer 280 DEG C at a temperature of be bonded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710605343.4A CN107640735B (en) | 2017-07-24 | 2017-07-24 | A kind of manufacturing method of functionization RF MEMS Switches |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710605343.4A CN107640735B (en) | 2017-07-24 | 2017-07-24 | A kind of manufacturing method of functionization RF MEMS Switches |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107640735A CN107640735A (en) | 2018-01-30 |
| CN107640735B true CN107640735B (en) | 2019-05-24 |
Family
ID=61110697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710605343.4A Active CN107640735B (en) | 2017-07-24 | 2017-07-24 | A kind of manufacturing method of functionization RF MEMS Switches |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107640735B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111517275B (en) * | 2020-05-09 | 2023-06-02 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN112777563B (en) * | 2021-01-12 | 2023-09-26 | 清华大学 | Manufacturing method of airtight radio frequency MEMS device and airtight radio frequency MEMS device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101620952A (en) * | 2008-12-19 | 2010-01-06 | 清华大学 | Ohm contact type radio frequency switch and integration process thereof |
| CN102107848A (en) * | 2009-12-25 | 2011-06-29 | 华东光电集成器件研究所 | Method of manufacturing suspension radio frequency switch |
| CN102403561A (en) * | 2011-09-22 | 2012-04-04 | 东南大学 | Micro-electromechanical cantilever beam switch type microwave power coupler and method for preparing microwave power coupler |
| CN104150434A (en) * | 2014-08-19 | 2014-11-19 | 中国电子科技集团公司第五十四研究所 | Preparation method of millimeter wave RF-MEMS (radio frequency-micro-electromechanical system) switch |
| CN105575734A (en) * | 2015-12-23 | 2016-05-11 | 北京时代民芯科技有限公司 | Radio frequency micro-electro-mechanical system (MEMS) switch and fabrication method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8445306B2 (en) * | 2008-12-24 | 2013-05-21 | International Business Machines Corporation | Hybrid MEMS RF switch and method of fabricating same |
-
2017
- 2017-07-24 CN CN201710605343.4A patent/CN107640735B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101620952A (en) * | 2008-12-19 | 2010-01-06 | 清华大学 | Ohm contact type radio frequency switch and integration process thereof |
| CN102107848A (en) * | 2009-12-25 | 2011-06-29 | 华东光电集成器件研究所 | Method of manufacturing suspension radio frequency switch |
| CN102403561A (en) * | 2011-09-22 | 2012-04-04 | 东南大学 | Micro-electromechanical cantilever beam switch type microwave power coupler and method for preparing microwave power coupler |
| CN104150434A (en) * | 2014-08-19 | 2014-11-19 | 中国电子科技集团公司第五十四研究所 | Preparation method of millimeter wave RF-MEMS (radio frequency-micro-electromechanical system) switch |
| CN105575734A (en) * | 2015-12-23 | 2016-05-11 | 北京时代民芯科技有限公司 | Radio frequency micro-electro-mechanical system (MEMS) switch and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107640735A (en) | 2018-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100499361C (en) | Electronic device and method of manufacturing the same | |
| US6908856B2 (en) | Method for producing electrical through hole interconnects and devices made thereof | |
| CN107640735B (en) | A kind of manufacturing method of functionization RF MEMS Switches | |
| CN102107848B (en) | Method of manufacturing suspension radio frequency switch | |
| CN109660227A (en) | Thin-film bulk acoustic wave filter and its packaging method | |
| CN100556795C (en) | The preparation method of radio-frequency micro-machinery series contact type switch | |
| CN102509718B (en) | Wafer-level chip size encapsulation technology for GaAs (gallium arsenide) CCD (Charge Coupled Device) image sensor | |
| US9362173B2 (en) | Method for chip package | |
| CN101946320A (en) | Integrated passive device and method with low cost substrate | |
| EP1861870A2 (en) | Method for fabricating a wafer level package having through wafer vias for external package connectivity and related structure | |
| CN109150135A (en) | Thin film bulk acoustic wave resonator and its processing method based on bonding | |
| CN110649909B (en) | Surface acoustic wave filter device wafer level packaging method and structure thereof | |
| CN101431172A (en) | Reconfigurable microwave low-pass filter containing MEMS switch and its manufacturing method | |
| CN101620952A (en) | Ohm contact type radio frequency switch and integration process thereof | |
| CN108190830A (en) | A kind of production method of high-aspect-ratio diamond micro nano structure | |
| US20110193211A1 (en) | Surface Preparation of Die for Improved Bonding Strength | |
| US11929729B2 (en) | Wafer level package and method of manufacture | |
| CN110713169A (en) | Method for improving flatness of polyimide sacrificial layer in radio frequency MEMS switch | |
| TWI665816B (en) | Miniaturized electronic device with reduced risk of breakage and method for its manufacture | |
| CN112777563B (en) | Manufacturing method of airtight radio frequency MEMS device and airtight radio frequency MEMS device | |
| CN102376629B (en) | Method for realizing through-silicon-via interconnection by suspension photoresist | |
| CN103632926B (en) | A kind of method of electroplating thin film circuit figure in ultrathin quartz substrate | |
| CN111430334A (en) | MEMS 5G communication radio frequency antenna and manufacturing process | |
| CN104465501A (en) | Pattern electroplating method for ultra-thin quartz substrate thin-film circuit | |
| CN106252276B (en) | Manufacturing method based on TSV technology switch matrix radio frequency unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |