CN107640735A - A kind of manufacture method of practical RF MEMS Switches - Google Patents
A kind of manufacture method of practical RF MEMS Switches Download PDFInfo
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- CN107640735A CN107640735A CN201710605343.4A CN201710605343A CN107640735A CN 107640735 A CN107640735 A CN 107640735A CN 201710605343 A CN201710605343 A CN 201710605343A CN 107640735 A CN107640735 A CN 107640735A
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Abstract
The present invention relates to MEMS manufacturing field, the manufacture method of more particularly to practical RF MEMS Switches.Mainly include Wafer Cleaning, the growth of the surfaces nitrided silicon of high resistant silicon chip, co-planar waveguide plating, the plating of Top electrode pole plate, the making of aluminum pull-down electrode, sacrifice layer release.The RF MEMS Switches manufactured using technical scheme, contact that electrode flatness is higher to have that yield rate is of a relatively high, switch life is relatively long under RF MEMS Switches, and insertion loss is relatively low, isolation is higher.
Description
Technical field
The present invention relates to MEMS manufacturing field, and in particular to a kind of manufacture method of practical RF MEMS Switches.
Background technology
In the prior art, RF MEMS Switches are by metal-metal contact or gold as a kind of passive device
The electric capacity that category-dielectric-metal is formed transmits or isolates microwave signal, has that insertion loss is low, isolation height etc.
Advantage.From ubiquitous smart sensor's network, cell phone, to tester equipment and military radar, RF MEMS
Switch has broad application prospects.In addition, RF MEMS Switches can largely reduce reconfigurable system size,
Weight and price, turn into one indispensable important technology of 21 century.
Although RF MEMS have begun to grow up in China, and external, such as U.S., Europe, Japan and South Korea
The MEMS researchs of country and manufacturing ability are compared, and gap is also very big.
Subject matter existing for domestic switch has at present：1. electroplating, CPW flatness is relatively low, has had a strong impact on the microwave of switch
Characteristic；2. due to the weak contact problems of double-contact when fabrication error causes the switch to close, life-span of switch is had a strong impact on.
In order to effectively solve the above problems, the present invention provides the manufacture method of practical RF MEMS Switches.Add gold
Category sputtering improves bottom electrode flatness, so as to improve the microwave property of switch；Bottom electrode uses spring beam, effectively avoids
The weak contact problems of double-contact.
The content of the invention
The concrete scheme of the present invention is as follows：The manufacture method of practical RF MEMS Switches, the manufacture method are used to make
RF MEMS Switches are made, the manufacture method comprises the following steps：
(1) cleaning silicon chip：Clean, then soaked using isopropanol, and be cleaned by ultrasonic 5-10 minutes first by acetone；
(2) lower salient point and isolation resistance are made：The PECVD deposit silicon nitrides layer on silicon chip, passes through spin coating, photoetching, etching
Make lower salient point, the silicon chip after being handled by above-mentioned steps sputters one layer of nitridation tantalum film, then carry out successively spin coating, photoetching and
RIE etchings, removing photoresist removes unnecessary tantalum nitride metal film, makes isolation resistance；
(3) mask is made using photoresist：On the silicon chip after being handled by above-mentioned steps, by even resist coating, carry out
Photoetching treatment, photoresist electroplating mold is formed in silicon chip surface；
(4) golden co-planar waveguide is made：Silicon chip after being handled by above-mentioned steps, electroplate golden co-planar waveguide；
(5) bottom electrode is made：Silicon chip after handling by above-mentioned steps, continue to electroplate, formed a bottom electrode and
Anchor point；
(6) golden membranous layer is sputtered：Silicon chip after step (1)-(5) are handled, by by photoetching by the portion in addition to bottom electrode
Divide and cover with photoresist, be sent into magnetic control platform, sputter golden membranous layer；
(7) Top electrode, anchor point are made：By the silicon chip extracting after step (6) processing, carry out plating Top electrode and form electricity
Pole, anchor point, the Top electrode is located above the bottom electrode, and is mutually correspondingly arranged；
(8) by the silicon chip extracting after above-mentioned processing, made annealing treatment, obtain RF MEMS Switches.
Further, the step (2) also includes the silicon chip after processing being sent into magnetic control platform, sputtering aluminum drop-down
Electrode, lead and pad electrodes, then carry out spin coating, photoetching and wet etching, removing photoresist removes unnecessary aluminum metal film layer.
Further, the step (3) is also included on the silicon chip after processing, and sputtering titanium tungsten-gold is coplanar as plating gold
The adhesion layer and Seed Layer of waveguide.
Further, the step (4) is also included the silicon chip after processing by spin-on polyimide, photoetching, exposure shape
Into sacrifice layer and through hole；
Further, the step (5) is also included on the silicon chip after processing, carries out releasing sacrificial layer operation.
Further, the step (6) is also included the silicon chip extracting after processing；By spin-on polyimide, photoetching, exposure
Light forms sacrifice layer and through hole.
Further, the step (7) is also included the silicon chip after processing, carries out sacrifice layer release operation.
Usefulness of the present invention：
The RF MEMS Switches obtain preferable flatness by sputtering au film coating bottom electrode, improve radio frequency
The yield rate of mems switch and life-span, and the microwave property of RF MEMS Switches is good, contact is sensitive, can be applied to all kinds of radio frequencies
Switch in scene.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, following examples, the present invention is carried out
It is described in further detail.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, it is not used to limit
The present invention.
On the contrary, the present invention covers any replacement done in the spirit and scope of the present invention being defined by the claims, repaiied
Change, equivalent method and scheme.Further, in order that the public has a better understanding to the present invention, below to the thin of the present invention
It is detailed to describe some specific detail sections in section description.Part without these details for a person skilled in the art
Description can also understand the present invention completely.
This embodiment offers practical RF MEMS Switches manufacture method, the practical RF MEMS Switches manufacturer
Method comprises the following steps.
(1) cleaning silicon chip：Clean first by acetone, then soaked using isopropanol, and be cleaned by ultrasonic five minutes；
(2) lower salient point and isolation resistance are made：The PECVD deposit silicon nitrides on silicon chip, it is convex under being made by photoetching, etching
Point, silicon chip is sent into magnetic control platform, sputters one layer of tantalum nitride, then carried out spin coating, photoetching and RIE etchings successively, remove photoresist
Remove unnecessary tantalum nitride metal film production isolation resistance；
(3) pull-down electrode, lead and pad electrodes are made：Silicon chip after step (2) processing is sent into magnetic control platform,
Sputtered aluminum layer, then carry out spin coating, photoetching and wet etching and make pull-down electrode, aluminum lead and aluminum pad electrodes processed；
(4) separation layer is made：PECVD deposit silicon nitrides form separation layer；
(5) Seed Layer is formed：On silicon chip after step (4) processing, sputtering titanium tungsten-gold is as the golden co-planar waveguide of plating
Adhesion layer and Seed Layer；
(6) mask is made using photoresist：On silicon chip after step (5) processing, by even resist coating, carry out at photoetching
Reason, photoresist electroplating mold is formed in silicon chip surface；
(7) golden co-planar waveguide is made：By on the silicon chip after step (6) processing, plating gold, the gold for forming 2-2.8 μ m-thicks is total to
Face waveguide；
(8) sacrifice layer and through hole are made：By the silicon chip after step (7) processing by spin-on polyimide, photoetching, exposure
Form the first sacrifice layer and through hole；
(9) bottom electrode is made：On silicon chip after step (8) processing, continue to electroplate, form bottom electrode and anchor point；
(10) releasing sacrificial layer：On silicon chip after step (9) processing, carry out release first and sacrifice layer operation；
(11) golden membranous layer is sputtered：By the silicon chip after step (10) processing, by by photoetching by the part in addition to bottom electrode
Cover, be sent into magnetic control platform with photoresist, sputter golden membranous layer；
(12) sacrifice layer and through hole are made：By the silicon chip extracting after step (11) processing；By spin-on polyimide, light
Carve, exposure forms the second sacrifice layer and through hole；
(13) Top electrode, anchor point are made：By the silicon chip extracting after step (12) processing, carry out plating Top electrode and form electricity
Pole, anchor point；
(14) releasing sacrificial layer：By the silicon chip after step (13) processing, the release operation of the second sacrifice layer is carried out；
(15) by the silicon chip extracting after step (14) processing, made annealing treatment, obtain RF MEMS Switches.
(16) encapsulation caps make：Spin coating covers at the edge of encapsulation caps with photoresist, and encapsulation is formed by photoetching, etching
Cap, and plate layer of metal tin at its edge；
(17) bonding prepares：By the silicon chip extracting after step (15) processing, one layer of silicon nitride is deposited in each switching edge
Switch is trapped among wherein by ring, and one layer of gold is plated in the top of silicon nitride ring；
(18) wafer level packaging：By the silicon chip extracting after step (17) processing, it is bonded with the silicon chip in step (16)
Alignment, is bonded at a temperature of 280 DEG C.
(19) scribing, complete to make the RF MEMS Switches.
Specifically, the acetone, isopropyl acetone in step (1) are the technique concentration of professional standard；
In step (2), the tantalum nitride isolation resistance that is sputtered on silicon chip, the aluminium pad electrodes for connecting driving electrodes can not
Influenceed by switched radio frequency signal；
Sputtering titanium tungsten-gold is the preparatory technology before electroplating technology in step (5), and sputtering titanium tungsten-gold is as adhesion layer and kind
Sublayer, the adhesiveness of electrodeposited coating can be increased；
The sputtering technology of sputtering golden membranous layer is industry internal standard technological operation in step (11), be will not be described here, and is sputtered
The thickness of golden membranous layer is 45-60nm, by sputtering the golden membranous layer in lower electrode surface, can improve the smooth of the bottom electrode
Degree, so as to improve the reliability of the RF MEMS Switches；
Sacrifice layer release operation in step (10), (14) is to utilize O2Plasma carries out dry release to sacrifice layer, releases
Putting the time needs at least 120min.
The RF MEMS Switches obtain preferable flatness by sputtering au film coating bottom electrode, lift RF MEMS
The yield rate of switch, the RF MEMS Switches life-span is relatively long, and the radio-frequency performance of RF MEMS Switches is more excellent, switch contact spirit
It is quick, it can be applied in all kinds of RF switch scenes.
For the ordinary skill in the art, according to the teachings of the present invention, do not depart from the principle of the present invention with
In the case of spirit, the changes, modifications, replacement and the deformation that are carried out to embodiment still fall within protection scope of the present invention it
It is interior.
Claims (9)
1. a kind of manufacture method of practical RF MEMS Switches, the manufacture method is used to manufacture RF MEMS Switches, and it is special
Sign is that the manufacture method comprises the following steps：
(1) silicon chip is cleaned using acetone first, reuses isopropanol immersion, and be cleaned by ultrasonic 5-10 minutes；
(2) the PECVD deposit silicon nitrides on the silicon chip, lower salient point is made, sputters tantalum nitride layer afterwards and make isolation resistance, then
Sputtered aluminum layer makes pull-down electrode, lead and pad electrodes；
After depositing one layer of silicon nitride protective layer on silicon chip, titanium tungsten-gold is sputtered, forms the adhesion layer and seed for electroplating golden co-planar waveguide
Layer；
(3) on the silicon chip by step (2) processing, golden co-planar waveguide is electroplated, and grasp by making sacrifice layer and releasing sacrificial layer
Make, plating forms bottom electrode, then carries out sacrifice layer release operation；
(4) after silicon chip carries out lithography operations, magnetic control platform is sent into, sputters one layer of smooth golden membranous layer；
(5) operated by making sacrifice layer and releasing sacrificial layer, plating forms Top electrode, is then made annealing treatment, is penetrated
Frequency mems switch component；
(6) by spin coating, photoetching, etching, encapsulation caps are made on another silicon chip, and in the edge tin metal of encapsulation caps
Layer.
(7) deposit silicon nitride layer is surround in the switch module the week side of boss of the silicon chip by step (5), and gold is electroplated on silicon nitride layer
Metal level；
(8) encapsulation caps of step (6) and step (7) switch module are subjected to bonding operation, encapsulate switch module, and scribing, it is complete
Into the making of RF MEMS Switches.
2. a kind of manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that in step (2)
In, plating gold, form golden co-planar waveguide；
Sacrifice layer and through hole are formed by spin-on polyimide, photoetching, exposure.
3. a kind of manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that in step (4)
In, the golden membranous layer for being 45-60nm in lower electrode surface sputtering thickness.
A kind of 4. manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that step (3),
(5) in, O is utilized2Plasma carries out dry release to sacrifice layer, and release time needs at least 120 minutes.
5. a kind of manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that in step (2)
In, one layer of tantalum nitride is first sputtered, then carries out spin coating, photoetching and RIE etchings successively, removing photoresist removes unnecessary tantalum nitride metal film
Layer operation；
Sputtered aluminum layer again, carries out spin coating, photoetching and wet etching, removing photoresist removes unnecessary aluminum metal film layer, pull-down electrode processed, aluminium
Lead and aluminum pad electrodes processed.
6. a kind of manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that in step (2)
In, lower salient point is made by spin coating, photoetching, etching.
A kind of 7. manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that step (3),
(5) in, the bottom electrode, Top electrode are fixed by anchor point and co-planar waveguide.
8. a kind of manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that in step (7)
In, one layer of silicon nitride ring is deposited at switch module edge, gold metal layer is electroplated in the silicon nitride ring upper surface.
9. a kind of manufacture method of practical RF MEMS Switches according to claim 1, it is characterised in that in step (7)
In, gold metal layer is bonded with the bonding operation of tin metal layer at a temperature of 280 DEG C.
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| CN201710605343.4A CN107640735B (en) | 2017-07-24 | 2017-07-24 | A kind of manufacturing method of functionization RF MEMS Switches |
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| CN201710605343.4A CN107640735B (en) | 2017-07-24 | 2017-07-24 | A kind of manufacturing method of functionization RF MEMS Switches |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111517275A (en) * | 2020-05-09 | 2020-08-11 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN112777563A (en) * | 2021-01-12 | 2021-05-11 | 清华大学 | Manufacturing method of airtight radio frequency MEMS device and airtight radio frequency MEMS device |
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| CN101620952A (en) * | 2008-12-19 | 2010-01-06 | 清华大学 | Ohm contact type radio frequency switch and integration process thereof |
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| CN101620952A (en) * | 2008-12-19 | 2010-01-06 | 清华大学 | Ohm contact type radio frequency switch and integration process thereof |
| US20120098136A1 (en) * | 2008-12-24 | 2012-04-26 | International Business Machines Corporation | Hybrid MEMS RF Switch and Method of Fabricating Same |
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| CN111517275A (en) * | 2020-05-09 | 2020-08-11 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN112777563A (en) * | 2021-01-12 | 2021-05-11 | 清华大学 | Manufacturing method of airtight radio frequency MEMS device and airtight radio frequency MEMS device |
| CN112777563B (en) * | 2021-01-12 | 2023-09-26 | 清华大学 | Manufacturing method of airtight radio frequency MEMS device and airtight radio frequency MEMS device |
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| CN107640735B (en) | 2019-05-24 |
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