CN107622817A - A kind of flexible electrode film, preparation method and application - Google Patents
A kind of flexible electrode film, preparation method and application Download PDFInfo
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- CN107622817A CN107622817A CN201610559971.9A CN201610559971A CN107622817A CN 107622817 A CN107622817 A CN 107622817A CN 201610559971 A CN201610559971 A CN 201610559971A CN 107622817 A CN107622817 A CN 107622817A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of flexible electrode method for manufacturing thin film, comprise the following steps：S1, conductive layer is provided, impressing glue is set in the conductive layer surface；S2, impression block is provided, the impression block surface has the micro-structural for forming graphical lines, and the micro-structural correspondence position is provided with barrier structure；S3, with the impressing glue described in the impression block imprint step S1, and solidify, separate impressing mould, the complementary pre-patterning lines of impressing mould surface micro-structure is formed on the impressing glue；Residual impressing glue between S4, the cleaning pre-patterning lines and conductive layer, makes conductive layer exposed, and then form graphical lines；S5, by deposited metal at graphical lines in step S4, form flexible electrode film.It is provided with barrier structure and imprints at mold graph, the solidification glue at figure between conductive layer is not cured, and removes the impressing glue not solidified and exposes conductive layer, can thus be produced with volume to volume, reduce cost.
Description
Technical field
The present invention relates to optical film technology field, more particularly to a kind of flexible electrode film, preparation method and application.
Background technology
Wire grating electrode is typically prepared using nanometer transfer printing technology, photoetching, nano impression and filling technique, can be simultaneously simultaneous
Care for high conductivity and high transmission rate.
It is real that Chinese invention patent ZL201010533228.9 describes a kind of method being coated with based on nano impression and nanometer
Existing nesa coating, groove is formed by nano impression, nanometer conductive material is filled in the trench, re-sinters to form high-performance
Conducting film, volume to volume processing procedure realize the low cost manufacture of nesa coating.But in nanometer conductive material sintering process,
Organic solvent volatilizees, and causes conductive material in groove to be recessed, the out-of-flatness of electrode surface pole.So that prepared using the above method saturating
Bright conductive film can not use in organic light emission, organic solar batteries.Nano impression is limited by, this method prepares transparent lead
The depth of electrolemma conductive trench is difficult further to deepen.
In the prior art, in order to realize the electrode of surface high-flatness, using photoresist is set on the electrically conductive, then expose
Photodevelopment, make conductive layer exposed, then using electroforming process, deposit conductive material, wash photoresist off, consolidate in coating solidification glue
Change, now conductive material is embedded in solidification glue, conductive layer is separated with solidification glue, conductive material, forms flexible electrode, so
It can be obtained by the flexible electrode of flatness same with conductive layer, adhesive curing-separation but exposure-development-deposition-removes photoresist-applied；
Technique is too complicated, and each photoetching piece can only produce a piece of final products, and exposure imaging adds the complexity of technique, and only
By the way of being prepared using plane, production efficiency is slow, cost also relative increase.
In consideration of it, to be solved by this invention is that flexible electrode thin film preparation process is complicated in the prior art, cost is high, table
The problem of surface evenness low (luminous efficiency and service life that influence device) and the big conductive material sheet resistance of filling, it is intended to carry
Go out a kind of preparation for realizing surface high planarization, embedded wire grid type compliant conductive electrode, and prepared and gone to work by the transparency electrode
Skill is simple, luminous efficiency is high, the flexible electrode film of service life length.
The content of the invention
Based on this, it is necessary to provide a kind of flexible electrode film, preparation method and application to solve techniques discussed above
Problem.
The present invention a technical scheme be：
A kind of flexible electrode method for manufacturing thin film, comprises the following steps：
S1, conductive layer, impressing glue is set in the conductive layer surface；
S2, impression block, the impression block surface have the micro-structural for forming graphical lines, and in the micro-structural
It is barrier structure provided with barrier structure or the micro-structural；
S3, with the impressing glue described in the impression block imprint step S1, and solidify, separate impressing mould, the pressure
The complementary pre-patterning lines of impressing mould surface micro-structure is formed on print glue；
Residual impressing glue between S4, the cleaning pre-patterning lines and conductive layer, makes pre-patterning lines corresponding
The conductive layer at place is exposed, and then forms graphical lines；
S5, by deposited metal at graphical lines in step S4, form flexible electrode film.
In a wherein embodiment, by flexible electrode film and conductive layers apart described in step S5, it is flexible to form first
Electrode film.
In a wherein embodiment, solidification glue is set by flexible electrode film described in step S5 is remote with conductive layer side
And solidified, then with conductive layers apart, form the second flexible electrode film.
In a wherein embodiment, impressing glue unnecessary in flexible electrode film in step S5 is removed, then, set solid
Change glue and solidify, then with conductive layers apart, form the 3rd flexible electrode film.
In a wherein embodiment, micro-structure surface is provided with barrier bed on impression block described in step S2, described to block
Layer has shading or thermal-insulation function.
Away from the impression block there is micro-structure surface side to be provided with a wherein embodiment, in step S2 to block
Layer, the barrier bed have shading or thermal-insulation function；Wherein, the barrier bed and opposite face side microstructure positional are mutually right
Should.
In a wherein embodiment, the conductive layer is conductive metal sheet；Or, the conductive layer is arranged at a supporting base material
Surface.
The present invention also discloses a kind of flexible electrode film, including：
Polymeric layer, the polymeric layer are provided with groove, and the groove forms graphical lines, wherein, the groove
Through the polymeric layer；
Conductive material, the conductive material are arranged at the groove, form flexible electrode film.
In a wherein embodiment, the flexible electrode film includes first surface and is oppositely arranged with first surface
Second surface, wherein, the roughness Ra 1 of first surface is less than the roughness Ra 2 of second surface, the overall roughness of first surface
Ra1<500nm。
In a wherein embodiment, the flexible electrode film includes first surface and is oppositely arranged with first surface
Second surface, the second surface are provided with the first solidification glue-line；Wherein, the overall roughness Ra 1 of first surface<500nm.
In a wherein embodiment, the overall roughness Ra 1 of first surface is less than or equal to 300nm；Or, first surface is overall
Roughness Ra 1 be less than or equal to 100nm.
In a wherein embodiment, the height of conductive material is more than 3 μm in the groove；Or conductive material in the groove
Height be more than or equal to 4 μm.
Another flexible electrode film that the present invention discloses, including：
Polymeric layer, the polymeric layer are provided with groove, and the groove forms graphical lines；
Conductive material, the conductive material are arranged in the groove, form flexible electrode film；
Wherein, the flexible electrode film includes first surface and the second surface being oppositely arranged with first surface, the
The overall roughness Ra 1 in one surface<500nm.
In a wherein embodiment, the overall roughness Ra 1 of first surface is less than or equal to 300nm；Or, first surface is overall
Roughness Ra 1 be less than or equal to 100nm.
In a wherein embodiment, the height of conductive material is more than 3 μm in the groove；Or conductive material in the groove
Height be more than or equal to 4 μm.
In a wherein embodiment, the thickness of the flexible electrode film is less than 50 μm.
The present invention also discloses a kind of application of flexible electrode film, and the flexible electrode film described in any of the above is used for into electricity
Magnet shielding structure, touch-screen, OLED, solar cell or bio-identification structure.
Beneficial effects of the present invention：
1), a kind of flexible electrode method for manufacturing thin film provided by the invention, using nanometer embossing, at mold graph
Provided with barrier structure, the barrier structure can be with shading or heat-insulated, so when being imprinted on imprinting glue, at figure and conduction
Solidification glue between layer will not be cured, and remove the impressing glue not solidified and expose conductive layer, can thus be entered with volume to volume
Row production, and patterned depth of groove can also become deeper, and in the case of no particular/special requirement, it is not necessary to wash
Fall solidification glue, this sampling technology is very simple, reduces the cost of production；
2) a kind of, flexible electrode film provided by the invention, the roughness on this kind of electrode film surface is very low, can reach
Hundreds of nanometers, effect either smaller or close to minute surface, fine plane can not be had by overcoming electrode film in tradition well
Technical problem, and this kind of electrode film is compared with traditional electrode film, and in the case of fixed width, electric conductivity returns more
It is superior, because the depth of conductive material can become deeper, on the premise of being so ensuring that transmitance, greatly enhance
Electric conductivity, the problem of transmitance and electric conductivity mutually restrict in nano impression is so overcome well；
3), the thickness of flexible electrode film provided by the invention can be controlled below tens microns, can be according to difference
Demand reduce thickness, can so meet the demand of the ultrathin design of current electronic product.
Brief description of the drawings
Fig. 1 a~1d are formation patterned structures schematic diagram in a kind of flexible electrode method for manufacturing thin film of the present invention；
Fig. 2 a~2c are the schematic diagram that conductive material is grown in a kind of flexible electrode method for manufacturing thin film of the present invention；
Fig. 3 is a kind of flexible electrode membrane structure schematic diagram of the present invention；
Fig. 4 is a kind of another structural representation of flexible electrode film of the present invention；
Fig. 5 is a kind of another structural representation of flexible electrode film of the present invention；
Fig. 6 is a kind of another structural representation of flexible electrode film of the present invention；
Fig. 7 is a kind of another structural representation of flexible electrode film of the present invention；
Fig. 8 is a kind of another structural representation of flexible electrode film of the present invention；
Fig. 9 is a kind of another structural representation of flexible electrode film of the present invention.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give the better embodiment of the present invention.But the present invention can be realized by many different forms, however it is not limited under
Embodiment described by face.On the contrary, the purpose for providing these embodiments makes to understand the disclosure
More thorough and comprehensive.
It should be noted that when element is referred to as " being arranged at " another element, it can be directly on another element
Or there may also be element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
For illustrative purposes only, it is unique embodiment to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more
The arbitrary and all combination of related Listed Items.
Fig. 1 a~1d and Fig. 2 a~2c are referred to, a kind of flexible electrode method for manufacturing thin film, is comprised the following steps：
S1, conductive layer 30 is provided, impressing glue 20 is set on the surface of conductive layer 30；The setting of conductive layer 30 is in order to follow-up
Metal deposit, so, the conductive layer 30 can be conductive metal sheet material, or the conductive layer 30 is arranged at a support group
The surface of material 40, the conductive layer 30 can be formed by the mode such as sputtering, being deposited or print；And the conductive layer 30 is towards pressure
The print side roughness of glue 20 is less than 500nm；
S2, impression block 10 is provided, the surface of impression block 10 has the micro-structural 11 for forming graphical lines, and institute
State micro-structural relative position and be provided with barrier structure 12, the barrier bed 12 has shading or thermal-insulation function；On the impression block
Micro-structure surface is provided with barrier bed；Or, away from the impression block 10 there is micro-structure surface side to be provided with barrier bed 12, it is described
Barrier bed 12 has shading or thermal-insulation function；Wherein, the barrier bed 12 and the position of opposite face side micro-structural 11 are mutually corresponding；
Or, the micro-structural 11 can play a part of micro-structural impressing or play a part of barrier structure 12 again；
S3, with the impressing glue 20 described in the imprint step S1 of impression block 10, and solidify the outer impressing glue that is blocked
Afterwards, impressing mould 10 is separated, the pre-patterning line complementary with 10 surface micro-structure of impressing mould 11 is formed on the impressing glue 20
Road 50；Wherein, the transmitance of the impressing glue is more than 75%, or the transmitance of the impressing glue is more than 80%, and transmitance is light
Line is irradiated to the permeable light of impressing glue institute；
Uncured impressing glue A, makes pre-patterning line between S4, the cleaning pre-patterning lines 50 and conductive layer 30
The conductive layer 30 of the corresponding section of road 50 is exposed, and then the graphical lines 51 of formation (or be groove structure, or be pit, or pass through
Wears groove)；Now, graphical lines 51 runs through the impressing glue；
S5, by deposited metal 60,61,62 at graphical lines 51 in step S4, form flexible electrode film；Due to figure
Change lines 51 and run through the impressing glue, by way of electroforming, metal can just deposit, and not have textured place, would not
Deposited metal, so, the graphical lines 51 can include some conductive channels, be additionally provided with and match somebody with somebody between each adjacent passage
Color region, now, the graphical lines 51 are that top plan view is shaped as grid, are matched colors between region and the conductive channel absolutely
Edge, insulation mode for grid lines disconnection or grid between staggering, it is described color matching area grid between be provided with cut-off point or net
Lattice are connected state；These disconnect or staggered can't be changed when being in impressing, i.e., conductive layer will not be made exposed, this
Sample can't grow conductive material during electroformed deposit, so still off-state, does not interfere with flexible electrode film
Function.
In a wherein embodiment, refer in Fig. 2 a~2C, the flexible electrode film and conductive layers apart, form the
One flexible electrode film, now as shown in Figure 2 a, it is soft that the first flexible electrode film includes conductive material 60, impressing glue 20, first
Property electrode film second surface 70 and flexible electrode film first surface 71, conductive material 60 fill and lead up the graphical lines 51
(or be groove structure, or be pit, or through groove)；As shown in Figure 2 b, the first flexible electrode film include conductive material 61,
Glue 20, the first flexible electrode film second surface 72 and flexible electrode film first surface 71 are imprinted, conductive material 61 is higher by
The graphical lines 51 (or be groove structure, or be pit, or through groove)；As shown in Figure 2 c, the first flexible electrical is very thin
Film includes conductive material 62, impressing glue 20, the first flexible electrode film second surface 73 and flexible electrode film first surface
71, conductive material 63 (or is groove structure, or is pit, or through groove) less than the graphical lines 51；First surface
Roughness Ra 1 be less than the roughness Ra 2 of second surface, the overall roughness Ra 1 of first surface<500nm.
In a wherein embodiment, the second table before three kind of first flexible electrode film described in Fig. 2 a~2c is not separated
Face sets solidification glue 21,23,22 respectively；Then the flexible electrode film is remote sets solidification glue with conductive layer side and enters
Row solidification, then with conductive layers apart, the second flexible electrode film is formed, as shown in Fig. 3, Fig. 4, Fig. 5.
In a wherein embodiment, impressing glue unnecessary in flexible electrode film in the step S5 described in Fig. 2 a~2c is gone
Remove, then, solidification glue 24,25,26 is set, and solidify, then with conductive layers apart, form the 3rd flexible electrode film, such as
Shown in Fig. 7, Fig. 8, Fig. 9.
In a wherein embodiment, the 3rd flexible electrode film thickness is less than 50 μm, and thickness is more than 50 microns equally
It can make, for example, 60 μm, 70 μm, 80 μm or thicker；Of course for adapting to ultra-thin design concept, the in the present invention
Three flexible electrode film thicknesses can also be thinner, for example, 40 μm, 35 μm, 30 μm, 25 μm or thinner.
A kind of flexible electrode method for manufacturing thin film provided by the invention, using nanometer embossing, sets at mold graph
There is a barrier structure, the barrier structure can be with shading or heat-insulated, so when being imprinted on imprinting glue, at figure and conductive layer
Between solidification glue will not be cured, remove the impressing glue not solidified and expose conductive layer, can thus be carried out with volume to volume
Production, and patterned depth of groove can also become deeper, and in the case of no particular/special requirement, it is not necessary to wash off
Solidification glue, this sampling technology is very simple, reduces the cost of production.
Referring to Fig. 6, a kind of flexible electrode film, it includes：
Glue 20 is imprinted, the impressing glue 20 is provided with groove 51, and the groove 51 forms graphical lines, wherein, it is described
Groove 51 is through the impressing glue 20；
Conductive material 62, the conductive material 62 are arranged at the groove 51, form flexible electrode film.The flexible electrical
Very thin films include first surface 71 and second surface 73, first surface 71 is directed towards conductive layer 30, thus first surface
Roughness Ra 1 is less than the roughness Ra 2 of second surface, the overall roughness Ra 1 of first surface<500nm；Refer to Fig. 3, Fig. 4
And Fig. 5, wherein, conductive material 60,61 and 62 can fill full groove 51, can also be not filled with full groove 51, can also
Beyond groove 51.
In a wherein embodiment, refer to Fig. 3, Fig. 4 and Fig. 5, the flexible electrode film include first surface with
And the second surface being oppositely arranged with first surface, the second surface be provided with first solidification glue-line or solidification glue 21,22,
23；Wherein, the overall roughness Ra 1 of first surface<500nm.In a wherein embodiment, the overall roughness of first surface
Ra1 is less than or equal to 300nm；Or, the roughness Ra 1 of first surface entirety is less than or equal to 100nm.
In a wherein embodiment, Fig. 3~5 are referred to, the height of conductive material is more than or equal to 10nm in the groove；Or
The height of conductive material is more than or equal to 50nm in the groove；Or the height of conductive material is more than or equal to 100nm in the cell body；
Or the height of conductive material is more than or equal to 200nm in the cell body；Or the height of conductive material is more than or equal in the cell body
400nm；Or the height of conductive material is more than or equal to 600nm in the cell body；Or the height of conductive material is more than in the cell body
Equal to 800nm.
In a wherein embodiment, conducting metal forms the conducting wire that sheet resistance is less than or equal to 5 Ω in the cell body；Or institute
The sheet resistance for stating the conducting wire that conductive material in groove is formed is less than or equal to 1 Ω；Or conductive material is formed in the groove
The sheet resistance of conducting wire be less than or equal to 0.8 Ω.
Fig. 7~9 are referred to, a kind of flexible electrode film, it includes：
Polymer 24,25,26, the polymer 24,25,26 are provided with groove, and the groove forms graphical lines；
Conductive material 60,61,62, the conductive material 60,61,62 are arranged in the groove, and it is very thin to form flexible electrical
Film；
Wherein, the flexible electrode film includes first surface and the second surface being oppositely arranged with first surface, the
The overall roughness Ra 1 in one surface<500nm.This kind of structure will imprint glue 20 and remove in Fig. 2 a~2c, then expose conduction material
Material 60,61,62, then polymer 24,25,26 is set；Solidify and and conductive layers apart, that is, obtain the flexible electrical of the structure of Fig. 7~9
Very thin films.
In a wherein embodiment, the overall roughness Ra 1 of first surface is less than or equal to 300nm；Or, first surface is overall
Roughness Ra 1 be less than or equal to 100nm.
In a wherein embodiment, the height of conductive material is more than or equal to 10nm in the groove；Or led in the groove
The height of electric material is more than or equal to 50nm.
In a wherein embodiment, the sheet resistance for the conducting wire that conductive material is formed is less than or equal to 1 Ω in the groove；
Or the sheet resistance for the conducting wire that conductive material is formed is less than or equal to 0.8 Ω in the groove.
In a wherein embodiment, the thickness of the flexible electrode film is less than 50 μm.
" the flexible electrode film " of above-mentioned middle appearance, " the first flexible electrode film ", " the second flexible electrode film " and
" the 3rd flexible electrode film " first, second and the 3rd is intended merely to the difference of title, in fact, can be called flexible electrode
Film；" impressing glue ", " solidification glue ", " polymer " three kinds of titles are intended merely to difference title material used different when,
Substantially " impressing glue ", " solidification glue ", " polymer " can be replaced between each other, simply difference nominally, can not make
The foundation judged for interest field.
Optical functional film much can all use flexible electrode film, for different functions for flexible electrode film
It is required that it is also different, require that the parameters such as flexible electrode film conductivity, transmitance and thickness all require for touch-screen, for
OLED is shown and lighting requirement flexible electrode Film roughness requires higher.
The flexible electrode film provided in the present invention can electromagnetic armouring structure, touch-screen, OLED, solar cell or
Bio-identification structure.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, above in conjunction with accompanying drawing to the present invention
Embodiment be described in detail.Many details are elaborated in superincumbent description in order to fully understand this hair
It is bright.But the present invention can be to be much different from other manner described above to implement, those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not limited by particular embodiments disclosed above.And
And each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not in above-described embodiment
The all possible combination of each technical characteristic be all described, if however, contradiction is not present in the combination of these technical characteristics,
All it is considered to be the scope of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (19)
1. a kind of flexible electrode method for manufacturing thin film, it is characterised in that comprise the following steps：
S1, conductive layer is provided, impressing glue is set in the conductive layer surface；
S2, impression block is provided, the impression block surface has the micro-structural for forming graphical lines, and the micro-structural pair
It is barrier structure to answer position to be provided with barrier structure or the micro-structural；
S3, with the impressing glue described in the impression block imprint step S1, and separate pressure after solidifying the outer impressing glue that is blocked
Stamp has, and the pre-patterning lines complementary with impressing mould surface micro-structure is formed on the impressing glue；
Uncured impressing glue, makes pre-patterning lines corresponding between S4, the cleaning pre-patterning lines and conductive layer
The conductive layer at place is exposed, and then forms graphical lines；
S5, in step s 4 deposited metal at graphical lines, form flexible electrode film.
2. a kind of flexible electrode method for manufacturing thin film according to claim 1, it is characterised in that will be soft described in step S5
Property electrode film and conductive layers apart, form the first flexible electrode film.
3. a kind of flexible electrode method for manufacturing thin film according to claim 1, it is characterised in that will be soft described in step S5
Property side of the electrode film away from conductive layer solidification glue is set and solidified, then with conductive layers apart, it is soft to form second
Property electrode film.
4. a kind of flexible electrode method for manufacturing thin film according to claim 1, it is characterised in that by flexible electrical in step S5
Remaining impressing glue removes in very thin films, then, sets solidification glue and solidifies, then with conductive layers apart, it is soft to form the 3rd
Property electrode film.
5. a kind of flexible electrode method for manufacturing thin film according to claims 1 to 4, it is characterised in that described in step S2
Micro-structure surface is provided with barrier bed on impression block, and the barrier bed has shading or thermal-insulation function.
6. a kind of flexible electrode method for manufacturing thin film according to claims 1 to 4, it is characterised in that remote in step S2
There is the impression block micro-structure surface side to be provided with barrier bed, and the barrier bed has shading or thermal-insulation function；Wherein, institute
State barrier bed and opposite face side microstructure positional is mutually corresponding.
7. a kind of flexible electrode method for manufacturing thin film according to claims 1 to 4, it is characterised in that the conductive layer is
Conductive metal sheet；Or, the conductive layer is arranged at a supporting base material surface.
A kind of 8. flexible electrode film, it is characterised in that including：
Polymeric layer, the polymeric layer are provided with groove, and the groove forms graphical lines, wherein, the groove runs through
The polymeric layer；
Conductive material, the conductive material are arranged at the groove.
9. a kind of flexible electrode film according to claim 8, it is characterised in that the flexible electrode film includes first
Surface and the second surface being oppositely arranged with first surface, wherein, the roughness Ra 1 of first surface is less than the thick of second surface
Rugosity Ra2, the overall roughness Ra 1 of first surface<500nm.
10. a kind of flexible electrode film according to claim 8, it is characterised in that the flexible electrode film includes the
One surface and the second surface being oppositely arranged with first surface, the second surface are provided with the first solidification glue-line；Wherein, first
The overall roughness Ra 1 in surface<500nm.
11. according to a kind of any described flexible electrode film of claim 8~10, it is characterised in that first surface entirety
Roughness Ra 1 is less than or equal to 300nm；Or, the roughness Ra 1 of first surface entirety is less than or equal to 100nm.
12. according to a kind of any described flexible electrode film of claim 8~10, it is characterised in that conductive in the groove
The height of material is more than or equal to 10nm；Or the height of conductive material is more than or equal to 50nm in the groove；Or led in the cell body
The height of electric material is more than or equal to 100nm；Or the height of conductive material is more than or equal to 200nm in the cell body；Or the cell body
The height of interior conductive material is more than or equal to 400nm；Or the height of conductive material is more than or equal to 600nm in the cell body；It is or described
The height of conductive material is more than or equal to 800nm in cell body.
13. according to a kind of any described flexible electrode film of claim 8~10, it is characterised in that conductive in the cell body
Metal forms the conducting wire that sheet resistance is less than or equal to 5 Ω；Or in the groove conducting wire that conductive material is formed sheet resistance
Less than or equal to 1 Ω；Or the sheet resistance for the conducting wire that conductive material is formed is less than or equal to 0.8 Ω in the groove.
A kind of 14. flexible electrode film, it is characterised in that including：
Polymeric layer, the polymeric layer are provided with groove, and the groove forms graphical lines；
Conductive material, the conductive material are arranged in the groove；
Wherein, the flexible electrode film includes first surface and the second surface being oppositely arranged with first surface, the first table
The overall roughness Ra 1 in face<500nm.
A kind of 15. flexible electrode film according to claim 14, it is characterised in that the overall roughness of first surface
Ra1 is less than or equal to 300nm；Or, the roughness Ra 1 of first surface entirety is less than or equal to 100nm.
A kind of 16. flexible electrode film according to claim 14, it is characterised in that the height of conductive material in the groove
Degree is more than or equal to 10nm；Or the height of conductive material is more than or equal to 50nm in the groove.
17. according to a kind of any described flexible electrode film of claim 14~16, it is characterised in that the flexible electrical is very thin
The thickness of film is less than 50 μm.
18. according to a kind of any described flexible electrode film of claim 14~16, it is characterised in that conductive in the groove
The sheet resistance for the conducting wire that material is formed is less than or equal to 1 Ω；Or the conducting wire that conductive material is formed in the groove
Sheet resistance is less than or equal to 0.8 Ω.
A kind of 19. application of flexible electrode film, it is characterised in that any described flexible electrode of the claim 1~17
Film is used for electromagnetic armouring structure, touch-screen, OLED, solar cell or bio-identification structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN108650794A (en) * | 2018-06-04 | 2018-10-12 | 上海量子绘景电子股份有限公司 | A kind of preparation method of wiring board |
| CN109031881A (en) * | 2018-07-27 | 2018-12-18 | 李文平 | Exposure mask mold and its method for preparing three-dimensional structure |
| CN110143569A (en) * | 2019-05-29 | 2019-08-20 | 京东方科技集团股份有限公司 | The preparation method of microelectrode diaphragm |
| CN110246607A (en) * | 2019-04-30 | 2019-09-17 | 山东大学 | A kind of flexible transparent conductive film and its preparation method and application of high transparency high bond strength |
| CN110843327A (en) * | 2018-08-20 | 2020-02-28 | 昇印光电（昆山）股份有限公司 | Texture forming equipment |
| CN111863314A (en) * | 2019-04-30 | 2020-10-30 | 昇印光电（昆山）股份有限公司 | Conducting film |
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| CN115064609A (en) * | 2022-07-07 | 2022-09-16 | 隆基绿能科技股份有限公司 | Solar cell preparation method, solar cell and cell module |
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| CN108650794A (en) * | 2018-06-04 | 2018-10-12 | 上海量子绘景电子股份有限公司 | A kind of preparation method of wiring board |
| CN109031881A (en) * | 2018-07-27 | 2018-12-18 | 李文平 | Exposure mask mold and its method for preparing three-dimensional structure |
| CN110843327A (en) * | 2018-08-20 | 2020-02-28 | 昇印光电（昆山）股份有限公司 | Texture forming equipment |
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| CN110143569A (en) * | 2019-05-29 | 2019-08-20 | 京东方科技集团股份有限公司 | The preparation method of microelectrode diaphragm |
| CN112927862A (en) * | 2021-01-26 | 2021-06-08 | 青岛理工大学 | High-performance large-area flexible transparent electrode and preparation method and application thereof |
| CN114709278A (en) * | 2022-06-06 | 2022-07-05 | 一道新能源科技(衢州)有限公司 | Method for preparing crystalline silicon solar cell electrode by laser melting |
| CN114709278B (en) * | 2022-06-06 | 2022-08-23 | 一道新能源科技(衢州)有限公司 | Method for preparing crystalline silicon solar cell electrode by laser melting |
| CN115064609A (en) * | 2022-07-07 | 2022-09-16 | 隆基绿能科技股份有限公司 | Solar cell preparation method, solar cell and cell module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111354508A (en) | 2020-06-30 |
| CN111354508B (en) | 2022-08-19 |
| CN107622817B (en) | 2020-04-07 |
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