CN107523803B - 薄膜形成装置 - Google Patents
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Abstract
用于实现如上所述的目的的本发明提供一种薄膜形成装置,向基板的表面上供给CVD(化学气相沉积)原料气体,向所供给的上述原料气体照射激光,利用与上述激光发生反应的上述原料气体,在上述基板形成薄膜,其特征在于,在上述基板的上部设置有腔室单元,上述腔室单元由供给原料气体的原料供给机构、使向上述原料供给机构供给的原料气体滞留的气体滞留腔室、排出从上述气体滞留腔室排出的原料气体的第一排气部和排出气体及原料气体的第二排气部形成,上述薄膜形成装置形成向上述气体滞留腔室的前方向形成均匀的压力的机构,以便在上述气体滞留腔室的内部使上述化学气相沉积原料气体的流动(gas flow)变得均匀。
Description
技术领域
本发明涉及薄膜形成装置,更详细地,涉及用于校正光掩模、液晶基板等具有平面图案结构的基板的缺陷的薄膜形成装置。
背景技术
图1为以往的薄膜形成装置的剖视图,图2为以往的薄膜形成装置的俯视图,参照图1至图2,在以往的薄膜形成装置中,在基板1的上部设置有腔室单元20,上述腔室单元20包括:原料供给机构30,用于供给原料气体;气体滞留腔室40,用于使向上述原料供给机构30供给的原料气体滞留;第一排气部50,用于排出上述气体滞留腔室40排出的原料气体;第一气体排出部60,用于阻隔外部空气,以防止原料气体与外部气体相混淆;以及第二排气部70,用于排出气体及原料气体。
在与向上述气体滞留腔室40供给的原料气体的供给方向相同的平行线2上,向上述原料气体的供给方向的后方形成有上述第一排气部50、第一气体排出部60及第二排气部70,从而在上述腔室单元20的3/4的等分面形成气流(gas flow),由于气体滞留腔室40的压力不均衡,因而向激光的位置流动的原料气体的量少,导致反应性变低的问题。
现有技术文献
专利文献
(专利文献1)韩国授权专利10-0381940号
(专利文献2)韩国授权专利10-0547500号
发明内容
因此,本发明为了解决如上所述的现有技术的问题而提出,本发明的目的在于,提供如下的薄膜形成装置,设计成向气体滞留腔室的前方向形成均匀的压力,从而使气体滞留腔室内的化学气相沉积(CVD)原料气体的流动(gas flow)变得均匀,以提高原料气体和激光的反应性。
但是,本发明的目的不局限于上述所提及的目的,未提及的其他目的可从以下的记载内容中由本发明所属技术领域的普通技术人员明确地理解。
用于实现如上所述的目的的本发明提供一种薄膜形成装置,向基板的表面上供给化学气相沉积原料气体,向所供给的上述化学气相沉积原料气体照射激光,利用与上述激光发生反应的上述化学气相沉积原料气体,在上述基板形成薄膜,其特征在于,在上述基板的上部设置有腔室单元,上述腔室单元由原料供给机构、气体滞留腔室、第一排气部和第二排气部形成,上述原料供给机构供给原料气体,上述气体滞留腔室使向上述原料供给机构供给的原料气体滞留,上述第一排气部排出上述气体滞留腔室排出的原料气体,上述第二排气部排出气体及原料气体,上述薄膜形成装置形成向上述气体滞留腔室的前方向形成均匀的压力的机构,以便在上述气体滞留腔室的内部使上述化学气相沉积原料气体的流动变得均匀。
并且,本发明提供一种薄膜形成装置,其特征在于,在向上述气体滞留腔室的前方向形成均匀的压力的机构中,在与从上述原料供给机构向上述气体滞留腔室供给的原料气体的供给方向相同的平行线上,向上述原料气体的供给方向前方(180°)形成有上述第一排气部,在上述平行线上,向上述第一排气部的前方形成有上述第一气体排出部,在供给上述原料气体的方向的后方,以上述平行线为基准,两侧对称地分别形成有第二排气部。
并且,本发明提供一种薄膜形成装置,其特征在于,在上述腔室单元中,在上述气体滞留腔室的周边部形成有一个以上的空气喷射孔,上述空气喷射孔向上述基板的表面侧喷射空气。
并且,本发明提供一种薄膜形成装置,其特征在于,上述原料供给机构形成有与上述气体滞留腔室相连接来供给原料气体的原料供给口,上述原料供给口倾斜地与上述气体滞留腔室相连接,使原料气体沿着上述气体滞留腔室的内周面以打旋的模样(swirling)进行供给。
并且,本发明提供一种薄膜形成装置,其特征在于,上述原料供给机构形成有与上述气体滞留腔室相连接来供给原料气体的原料供给口,在上述原料供给口的内周面形成有螺旋形的螺旋槽,使供给的上述原料气体的截面形状进行旋转。
本发明的特征及多个优点通过根据附图的以下的详细说明更加变得明确。
在此之前,本说明书及发明要求保护范围中所使用的术语或词汇不应解释为通常且词典上的含义,应本着发明人为了以最佳的方法说明其自身的发明而可适当定义术语的概念的原则解释为符合本发明的技术思想的含义和概念。
如以上所察看,根据本发明,具有如下效果:原料气体和激光的反应性得到提高,从而也可在激光的薄的线宽顺畅地形成薄膜,也可使用比以往的薄膜形成装置更少量的原料气体来取得相同的结果,以节减原料,减少生产成本,减少生成在薄膜周边的飞散粒子,并减少生长型异物的产生。
附图说明
图1为以往的薄膜形成装置的剖视图。
图2为以往的薄膜形成装置的俯视图。
图3为用于说明本发明的薄膜形成装置的剖视图。
图4为用于说明本发明的薄膜形成装置的俯视图。
图5为用于说明本发明的第二实施例的俯视图。
图6为用于说明本发明的第三实施例的俯视图。
附图标记的说明
1:基板 20:腔室单元
30:原料供给机构 31:原料供给口
32:螺旋槽 40:气体滞留腔室
41:第二气体排出口 42:激光透射窗
50:第一排气部 51、71:沟槽
52、72:沟槽孔 53、73:贯通孔
70:第二排气部 80:空气喷射孔
具体实施方式
以下,参照附图对本发明的优选实施例进行说明。在这过程中,为了明确和便于说明,图中所示的多个线的厚度或结构要素的大小等可以有所夸张地示出。
并且,后述的多个术语作为考虑本发明中的功能而定义的术语,这可根据使用人员、操作人员的意图或惯例而不同。因此,对于这种多个术语的定义应根据本说明书全文内容来进行。
而且,以下的实施例不限定本发明的发明要求保护范围,只不过是本发明的发明要求保护范围中所提出的结构要素的例示性的事项,包括在本发明的说明书全文的技术思想且包括在发明要求保护范围的结构要素中作为等同技术方案可取代的结构要素的实施例可以包括在本发明的发明要求保护范围。
图3为用于说明本发明的第一实施例的剖视图。图4为用于说明本发明的第一实施例的俯视图。图5为用于说明本发明的第二实施例的俯视图。图6为用于说明本发明的第三实施例的俯视图。
首先,在说明本发明之前,对于与现有技术相同的部分,标注相同的附图标记,并省略重复的说明。
参照图3至图4,在上述基板1的上部设置有腔室单元20,上述腔室单元20包括:原料供给机构30,用于供给原料气体;气体滞留腔室40,用于使向上述原料供给机构30供给的原料气体滞留;第一排气部50,用于排出上述气体滞留腔室40排出的原料气体;以及第二排气部70,用于排出气体及原料气体。
利用上述第一排气部50和第二排气部60来防止形成薄膜时产生的气体向周围泄漏。
并且,在上述气体滞留腔室40周边部形成有一个以上的用于向上述基板1的表面侧喷射空气的空气喷射孔80,上述空气喷射孔80可选择性地设置于上述气体滞留腔室40的周边部。
可利用从上述空气喷射孔80喷射的空气来最小化在薄膜周边的飞散粒子的生成,且可抑制生长型异物的产生。
并且,在腔室单元20的底面形成有圆形的沟槽,以便于通过上述腔室单元20的底面与上述基板1之间的间隙(gap)排放或排出上述气体。
因此,上述第一排气部60由形成于上述腔室单元20的底面的圆形的沟槽51和与形成于上述沟槽51的沟槽孔52相连接的贯通孔53形成。
并且,上述第二排气部70由形成于上述腔室单元20的底面的沟槽71、与形成于上述沟槽71的沟槽孔72相连接来排出上述气体及原料气体的贯通孔73形成。
在上述气体滞留腔室40的上部设置有激光透射窗42,使得上述激光透射,形成有与上述气体滞留腔室40相连接来供给吹扫(purge)用的气体的第二气体排出口41。
优选地,作为上述吹扫用的气体或空气帘用的气体,使用N2、Ar、He等惰性气体,优选地,作为与激光发生反应来形成薄膜的原料气体,使用Cr(Co)6、W(CO)6等。
在与从上述原料供给机构30向上述气体滞留腔室40供给的原料气体的供给方向相同的平行线2上,上述第一排气部50向上述原料气体的供给方向前方(180°)形成。
并且,在供给上述原料气体的方向的后方,以上述平行线2为基准,两侧对称地分别形成有第二排气部70。
因此,向气体滞留腔室40的前方向维持均匀的压力,从而在上述气体滞留腔室内,上述原料气体的流动(gas flow)变得均匀。
由此,向激光的位置流动的原料气体的量得到提高,从而可诱导高的反应,因而在激光的薄的线宽中,也可顺畅地形成薄膜,使用比以往的薄膜形成装置更少量的原料气体也可取得相同的结果,从而可节减原料,进而节减生产成本。
参照图3及图5,在上述原料供给机构30形成有与上述气体滞留腔室40相连接来供给原料气体的原料供给口31。
上述原料供给口31倾斜地与上述气体滞留腔室40相连接,使原料气体沿着上述气体滞留腔室40的内周面以打旋的模样(swirling)进行供给,从而增加原料气体的流动距离,由此,原料气体暴露在激光的时间变长,以提高反应性,从而可有效地在上述基板1形成薄膜。
并且,参照图3及图6,在上述原料供给口31的内周面形成有螺旋形的螺旋槽32,使供给的上述原料气体的截面形状进行旋转,以增加原料气体的流动距离,由此,原料气体暴露在激光的时间变长,以提高反应性,从而可有效地在上述基板1形成薄膜。
以上,通过具体实施例详细说明了本发明,但这用于具体说明本发明,而本发明并不局限于此,在本发明的技术思想内,可由本发明所属技术领域的普通技术人员进行其变形或改变,这是显而易见的。
本发明的简单变形乃至变更均属于本发明的范畴,本发明的具体保护范围可根据所附的专利发明要求保护范围而变得明确。
Claims (1)
1.一种薄膜形成装置,向基板的表面上供给化学气相沉积原料气体,向所供给的上述化学气相沉积原料气体照射激光,利用与上述激光发生反应的上述化学气相沉积原料气体,在上述基板形成薄膜,其特征在于:
在上述基板的上部设置有腔室单元,上述腔室单元由原料供给机构、气体滞留腔室、第一排气部和第二排气部形成,上述原料供给机构供给原料气体,上述气体滞留腔室使向上述原料供给机构供给的原料气体滞留,上述第一排气部排出上述气体滞留腔室排出的原料气体,上述第二排气部排出气体及原料气体,
所述第一排气部由形成于所述腔室单元的底面的圆形的第一沟槽和与形成于上述第一沟槽的第一沟槽孔相连接的第一贯通孔形成;
所述第二排气部由形成于所述腔室单元的底面的第二沟槽、与形成于上述第二沟槽的第二沟槽孔相连接来排出上述气体及原料气体的第二贯通孔形成;
在所述气体滞留腔室的上部设置有激光透射窗,使得激光透射,形成有与所述气体滞留腔室相连接来供给吹扫用的气体的第二气体排出口;
上述薄膜形成装置形成向上述气体滞留腔室的前方向形成均匀的压力的机构,以便在上述气体滞留腔室的内部使上述化学气相沉积原料气体的流动变得均匀;
在向所述气体滞留腔室的前方向形成均匀的压力的机构中,在从所述原料供给机构向所述气体滞留腔室供给的原料气体的供给方向相同的平行线上,向原料气体的供给方向180°的前方形成有所述第一排气部,在供给原料气体的方向的后方,以上述平行线为基准,两侧对称地分别形成有第二排气部;
在上述腔室单元中,在上述气体滞留腔室的周边部形成有一个以上的空气喷射孔,上述空气喷射孔向上述基板的表面侧喷射空气;
所述原料供给机构形成有与所述气体滞留腔室相连接来供给原料气体的原料供给口,所述原料供给口的内周面形成有螺旋形的螺旋槽,使供给的原料气体的截面形状进行旋转;所述原料供给口倾斜地与所述气体滞留腔室相连接,使原料气体沿着所述气体滞留腔室的内周面以打旋的模样进行供给。
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