CN106531703A - High-performance inverted COB packaging structure and manufacturing method thereof - Google Patents
High-performance inverted COB packaging structure and manufacturing method thereof Download PDFInfo
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- CN106531703A CN106531703A CN201611186439.3A CN201611186439A CN106531703A CN 106531703 A CN106531703 A CN 106531703A CN 201611186439 A CN201611186439 A CN 201611186439A CN 106531703 A CN106531703 A CN 106531703A
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- cob
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- led chips
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- 238000004806 packaging method and process Methods 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000003466 welding Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 239000010931 gold Substances 0.000 claims abstract description 15
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract 3
- 241000218202 Coptis Species 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 244000247747 Coptis groenlandica Species 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical group [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical class [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- HSGAUFABPUECSS-UHFFFAOYSA-N [Ag][Cu][Sn][Bi] Chemical compound [Ag][Cu][Sn][Bi] HSGAUFABPUECSS-UHFFFAOYSA-N 0.000 description 1
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 1
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- WRAOBLMTWFEINP-UHFFFAOYSA-N [Sn].[Ag].[Ni] Chemical compound [Sn].[Ag].[Ni] WRAOBLMTWFEINP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical class [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000007560 sedimentation technique Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Led Device Packages (AREA)
Abstract
The present invention discloses a high-performance inverted COB packaging structure and a manufacturing method thereof. The high-performance inverted COB packaging structure comprises a COB substrate and a plurality of inverted LED chips; the COB substrate includes a base material layer, an upper insulation layer, a line layer, a gold plating layer and a solder mask layer; the base material layer, the upper insulation layer and the line layer are arranged in order from down to up, the top of the line layer includes a first area and a second area; the solder mask layer is arranged on the second area of the line layer, and the gold plating layer is arranged at the first area of the line layer; and the gold plating layer is provided with a chip welding electrode for connecting with the pins of the inverted LED chips and an external connection wire welding electrode for connecting with an external connection circuit. The inverted COB packaging structure has no gold thread to avoid the risk that the products are failed caused by the fracture of the welding line in the routine COB; and moreover, in the condition of the same chip area and the same substrate size, the high-performance inverted COB packaging structure can perform more than overload 50% driving usage than the routine COB, and is high in luminous efficiency and stable in performance.
Description
Technical field
The present invention relates to lighting engineering, more particularly to high-performance upside-down mounting COB encapsulating structures and preparation method thereof.
Background technology
With the development of LED (Light Emitting Diode, light emitting diode) technology, which is extensive in illuminating industry
Using while, market proposes requirements at the higher level, such COB (Chip On to the brightness of LED, reliability, install convenient etc.
Board, integrated chip is to substrate) packing forms just arise at the historic moment.
At present comparative maturity be positive assembling structure COB, positive cartridge chip is fixed on substrate, using gold thread (or alloy
Line) electrical connection that completes between chip chamber and chip and base plate line, it is coated with the fluorescence containing fluorescent material and composes needs
Photochromic and protection internal components, as depicted in figs. 1 and 2, the COB shortcomings of this structure are clearly：Easily break dead lamp, heatproof
Low, power density is low, time-consuming for die bond (by chip attachment on substrate) technique.
Traditional upside-down mounting COB encapsulating structures there is also some shortcomings, such as substrate insulating layer low thermal conductivity, each chip in COB
Power is uneven, and after chip welding, voidage is high, and chip is partially thick with substrate weld layer, and during chip normal work, junction temperature is higher etc..
The content of the invention
In order to overcome the deficiencies in the prior art, an object of the present invention is to provide high-performance upside-down mounting COB encapsulating structures,
Which can solve the problems, such as that existing COB reliability of structures are low.
The second object of the present invention is to provide high-performance upside-down mounting COB encapsulating structure preparation methods, and which can solve existing COB
The low problem of reliability of structure.
An object of the present invention employs the following technical solutions realization：
High-performance upside-down mounting COB encapsulating structures, including COB substrates and several flip LED chips；COB substrates include base material
Layer, upper insulating barrier, line layer, Gold plated Layer and solder mask；Substrate layer, upper insulating barrier and line layer are set gradually from bottom to up, line
The top surface of road floor includes first area and second area, and on the second area of line layer, Gold plated Layer is located at the solder mask
On the first area of line layer；Gold plated Layer be provided with the chip welding electrode that is connected for the pin with flip LED chips and
For the external wire welding electrode connected with external circuitses；
Line layer includes several sub- line layers, is electrically connected by flip LED chips between two adjacent sub- line layers
Connect, two adjacent flip LED chips are connected by sub- line layer.
Preferably, several flip LED chips carry out series connection forms chip branch road, several chip branch circuit parallel connections.
Preferably, COB substrates also include the lower insulating barrier located at the bottom surface of substrate layer.
Preferably, COB substrates also include the thermally conductive insulating layer between upper insulating barrier and line layer.
Preferably, the top surface of the COB substrates and flip LED chips is provided with box dam circle, box dam circle filled with covering
The fluorescent glue of flip LED chips top surface.
The second object of the present invention employs the following technical solutions realization：
High-performance upside-down mounting COB encapsulating structure preparation methods, for making high-performance upside-down mounting COB encapsulating structures, specifically include
Following steps：
S1, acquisition COB substrates；
Welding material is coated on S2, the chip welding electrode on COB substrates；
S3, coat insulating materials between two adjacent sub- line layers of the line layer of COB substrates；
S4, flip LED chips are placed on COB substrates corresponding position；
S5, COB substrates and flip LED chips are welded.
Further, also comprise the steps after S1：
S1A, plasma cleaning is carried out to COB substrates.
Further, also comprise the steps after S5：
S5A, ultrasonic wave cleaning is carried out to high-performance upside-down mounting COB encapsulating structures.
Further, also comprise the steps after S5：
S5B, high-performance upside-down mounting COB encapsulating structures are dehumidified.
Further, also comprise the steps after S5：
S5C, COB substrates and flip LED chips top surface coating fluorescent glue.
Compared to existing technology, the beneficial effects of the present invention is：By upside-down mounting COB encapsulating structures without gold thread, it is to avoid conventional
Thread breakage is welded in COB causes the risk of product failure；And under the conditions of same chip area, same substrate size, can be with
More than conventional COB, overload 50% drives and uses, and light efficiency is high, stable performance.
Description of the drawings
Fig. 1 is the top view of the COB of existing positive assembling structure；
Fig. 2 is the longitudinal section of the COB of existing positive assembling structure；
Fig. 3 is the longitudinal section of the COB substrates of the present invention；
Fig. 4 is the longitudinal section of the high-performance upside-down mounting COB encapsulating structures of the present invention；
Fig. 5 is the top view of the high-performance upside-down mounting COB encapsulating structures of the present invention；
Fig. 6 is the top view of the a-quadrant of the high-performance upside-down mounting COB encapsulating structures of the present invention.
In figure：001st, lower insulating barrier；002nd, upper insulating barrier；01st, substrate layer；02nd, thermally conductive insulating layer；03rd, line layer；04、
Solder mask；05th, flip LED chips；051st, pin；06th, welding material；07th, box dam circle；08th, fluorescent glue.
Specific embodiment
Below, with reference to accompanying drawing and specific embodiment, the present invention is described further：
As shown in Figures 3 to 6, high-performance upside-down mounting COB encapsulating structures, including COB substrate and several flip LED chips
05；
COB substrates include substrate layer 01, upper insulating barrier 002, line layer 03, Gold plated Layer (not shown) and solder mask 04；Base
Material layer 01, upper insulating barrier 002 and line layer 03 are set gradually from bottom to up, and the top surface of line layer 03 includes first area and second
Region, first area are the region for needing electrical connection, and second area is the region for needing electric insulation；The solder mask 04 sets
On the second area of line layer 03, on the first area of line layer 03, Gold plated Layer is pad layer to Gold plated Layer.
The Gold plated Layer is provided with chip welding electrode and external wire welding electrode, the chip welding electrode be used for and
The correspondence of pin 051 of several flip LED chips 05 connects；The cross-sectional area and flip LED chips 05 of chip welding electrode
Pin 051 cross-sectional area area ratio be 0.7-1.3；Further, the pin 051 of several flip LED chips 05
Pass through welding material 06 and chip welding electrode connects.
Further, line layer 03 includes several sub- line layers, and line layer 03 is made up of several sub- line layers, two
It is electrically connected by flip LED chips 05 between adjacent sub- line layer, is led between two adjacent flip LED chips 05
Cross sub- line layer connection；Insulating materials, preferably high reflection insulation are filled with gap between two adjacent sub- line layers
Material, the height of insulating materials are not higher than the height of line layer 03；For example, line layer 03 includes the first sub- line layer and second sub
Line layer；On any one pin 051 of flip LED chips 05 and the first sub- line layer, corresponding chip welding electrode electrically connects
Connect, on another pin 051 of flip LED chips 05 and the second sub- line layer, corresponding chip welding electrode is electrically connected with；The
Insulating materials is filled with gap between one sub- line layer and the second sub- line layer, the height of insulating materials is not higher than line layer
03 height；Insulating materials is used to prevent short circuit between the first sub- line layer and the second sub- line layer, and improves flip LED core
The radiating effect of piece, to improve the life-span of flip LED chips.
Further, COB substrates also include lower insulating barrier 001, and lower insulating barrier 001 is located at the bottom surface of substrate layer 01.
Further, COB substrates also include thermally conductive insulating layer 02, and thermally conductive insulating layer 02 is located at upper insulating barrier 002 and circuit
Between layer 03, the thickness of thermally conductive insulating layer 02 is 5um-350um.
The substrate layer 01 is aluminium base layer；The upper insulating barrier 002 and lower insulating barrier 001 are aluminum oxide, upper insulation
The thickness of layer 002 and lower insulating barrier 001 is 1um-50um；The line layer 03 be copper foil circuit layer, the thickness of line layer 03
For 20um-80um；The Gold plated Layer is nickel gold or NiPdAu, and the thickness of nickel-gold layer is nickel 2um-15um and gold 0.05um-
0.3um, the thickness of NiPdAu layer is nickel 2um-15um, palladium 0.01um-0.15um and gold 0.05um-0.3um；The solder mask
04 is white oil solder mask, and the thickness of solder mask 04 is 5um-50um.
Further, the top surface of the high-performance upside-down mounting COB encapsulating structures is additionally provided with box dam circle 07, filling in box dam circle 07
There is fluorescent glue 08, fluorescent glue 08 covers the top surface of flip LED chips 05.
As shown in figure 5, high-performance upside-down mounting COB encapsulating structures in actual applications when, several flip LED chips 05
Carry out series connection and form chip branch road, several chip branch circuit parallel connections form final high-performance upside-down mounting COB encapsulating structures, some
The parallel connection of individual chip branch road is specially：One end of several chip branch roads is all connected with, and the other end of several chip branch roads connects
Connect.After flip LED chips 05 are first connected, connected mode in parallel can reduce the different voltages because of flip LED chips 05 as far as possible
Cause the CURRENT DISTRIBUTION of each chip uneven；Electric current of the series connection per chips is identical, and after multiple chips series connection, total voltage tends to one
Cause, it is then in parallel again, it is in parallel to minimize per road current difference；The reliability of product can so be improved.
High-performance upside-down mounting COB encapsulating structure preparation methods, for making high-performance upside-down mounting COB encapsulating structures, specifically include
Following steps：
Step 101, acquisition COB substrates；The COB substrates are to be made according to default specification, and default specification includes：Line
After chip welding electrode connection flip LED chips on the floor of road, all flip LED chips can be formed several chips
Road, then several chip branch roads are carried out into parallel connection；
Welding material is coated on step 102, the chip welding electrode on COB substrates；Specifically, printed using steel mesh
Mode coats welding material；Wherein steel mesh thickness<0.15mm, steel mesh perforate are located at the centre of chip welding electrode, perforated area
Between the 30%-80% of chip welding electrode area.Printed using metallic spatula, during printing, scraper is controlled with steel mesh angle
30 ° -80 °, scraper pressure control rolls straight in 21-163mm/s, welding material in 0.17kg/cm-0.37kg/cm, speeds control
Footpath 1.0cm-2.5cm, steel mesh rate of release 0.7mm/s-6mm/s, scraper hoisting depth 7-19mm.
Step 103, coat insulating materials between two adjacent sub- line layers of the line layer 03 of COB substrates；This is exhausted
Edge material is transparent or to visible reflectance more than 85% material, and thermal conductivity factor is more than 0.1w/mk, and viscosity is more than
10Pa.s.The preferred silica gel of the material or the silica gel doped with AL2O3 ceramic particles, wherein ceramic particle particle diameter are less than
20um.The operation can effectively reduce junction temperature when LED chip works, and improve the life-span, while can improve brightness and reduce gas
Bubble strengthens reliability.
Step 104, flip LED chips are placed on COB substrates corresponding position；Specifically, will be fallen using bonder
Dress LED chip is placed on COB substrates corresponding position, and the suction nozzle for capturing flip LED chips adopts bakelite or quality of rubber materials, choosing
Take suitable thimble and adjust thimble height below chip indigo plant film, it is ensured that thimble does not puncture blue film during die bond.
Step 105, COB substrates and flip LED chips are positioned over warm areas different in reflow ovens with complete welding formed
Final high-performance upside-down mounting COB encapsulating structures；Specifically, once returned by formula fuel recycle by way of guide rail or conveyer belt
In stream stove, different warm areas completes welding.
Reflow ovens include at least 5 warm areas, respectively preheating zone, heat preservation zone, the thermal treatment zone, recirculating zone, cooling zone, wherein often
Individual warm area can contain one or more cavitys.In reflux course, each warm area pours nitrogen to exclude air, prevents material oxidation, control
Oxygen content processed is at least below 1000PPM.Temperature and duration of the control material through different warm areas, depending on different welding material not
Together, it is specific as follows：
Further, also include step 101A after step 101, plasma cleaning is carried out to COB substrates；It is concrete to wrap
Include：COB substrates are put in the magazine of edge hollow out, magazine is put in plasma cleaner, COB substrates are cleaned；
Using ripple gas of not living, ripple gas of not living includes argon gas (Ar), nitrogen (N2), nitrogen fluoride (NF3) or four to wherein plasma cleaning
Nitrogen fluoride (CF4) etc..
Specifically, in welding material scaling powder content be less than 20%, in welding material alloying pellet be No. 5 powder or less, 5
Number powder footpath is 15um-25um.Alloy in welding material can select it is following any one：
1) Sn-Ag-Cu SACs series：It is preferred that the silver content in SAC305, i.e. SAC tin cream is 3%, copper content being
0.5%；Secondly, the SAC of other different contents is may be selected, but wherein silver content, between 0.1%-10%, copper contains
Amount is between 0.1%-5%.Including the alloy of micro other elements of being adulterated based on the series.
2) Sn-Sb tin antimony series：It is preferred that Sn90/Sb10, i.e. antimony content are 10%；Secondly, other different contents may be selected
Alloy, but wherein antimony content is between 5%-15%.Including the alloy of micro other elements of being adulterated based on the series.
Au-Sn gold tin series：It is preferred that Au80/Sn20, i.e. Theil indices 20%；Including adulterated based on the series it is micro its
The alloy of his element.Gold-tin alloy is preferably attached on chip welding electrode and uses, thickness 1-20um；Chip pin and core during welding
Scaling powder is coated between piece welding electrode.
Further, also include after step 105：Step 105A, ultrasound is carried out to high-performance upside-down mounting COB encapsulating structures
Ripple is cleaned；Specifically, ultrasonic frequency 20-150kHz, power 0.8-3w/L, temperature 25-70C in cleaning process, scavenging period
5-30mins。
Further, also include after step 105：Step 105B, to high-performance upside-down mounting COB encapsulating structures dehumidify；Tool
Body, dehumidified by oven cooking cycle, it is 80-150C that baking temperature arranges scope, and baking time is 20-60mins.
Further, also include after step 105：Step 105C, COB substrates and flip LED chips top surface apply
Cover fluorescent glue；Specifically, using active sedimentation techniques, fluorescent material is close to heat-radiating substrate, and brightness and reliability are carried for fluorescent glue coating
Rise.
After final high-performance upside-down mounting COB encapsulating structures are completed, separate full wafer COB substrates and packed.
In the present invention, upside-down mounting COB encapsulating structure devices are without gold thread, it is to avoid thread breakage is welded in conventional COB causes product failure
Risk.Conventional COB is compared, the upside-down mounting COB encapsulating structures structure in the present invention is in same chip area, same substrate size bar
Under part, 50% driving can be transshipped more than conventional COB and used, light efficiency is high, stable performance.Upside-down mounting COB encapsulating structures in the present invention
The more conventional COB of structure thermal resistance is low by more than 50%, can match more flexible heat dissipation design, reduces application end cost.Compare tradition
Upside-down mounting COB encapsulating structures, the present invention in series-parallel system chip temperature can be made to tend to average, reduce highest junction temperature of chip 5C with
On, improve performance.Compare Conventional flip COB encapsulating structures, coated with thermally conductive insulating materials can have immediately below the chip in the present invention
More than 5 DEG C of effect reduction junction temperature of chip, and improve performance.Conventional flip COB encapsulating structures are compared, before the painting welding material in the present invention
Plasma cleaning, welding material typography, reflux technique, can control weld layer thickness and are less than 10um, and can reduce by more than 5%
Cavity, enhances product performance.
The substrate layer is including but not limited to copper base, aluminium base, Al2O3 ceramic substrates or AlN ceramic；The weldering
Splicing, including but not limited to fine silver, Xi Yin, SAC, tin silver nickel, SAC nickel, tin silver bismuth copper, SAC bismuth antimony, tin bismuth, tin
The series such as bismuth copper, tin bismuth silver, tin copper, tin-lead.
It will be apparent to those skilled in the art that technical scheme that can be as described above and design, make other various
It is corresponding to change and deformation, and all these change and deformation should all belong to the protection domain of the claims in the present invention
Within.
Claims (10)
1. high-performance upside-down mounting COB encapsulating structures, it is characterised in that including COB substrates and several flip LED chips；COB substrates
Including substrate layer, upper insulating barrier, line layer, Gold plated Layer and solder mask；Substrate layer, upper insulating barrier and line layer are from bottom to up successively
Arrange, the top surface of line layer includes first area and second area, and the solder mask is on the second area of line layer, gold-plated
Layer is on the first area of line layer；Gold plated Layer is provided with the chip welding electricity being connected for the pin with flip LED chips
Pole and the external wire welding electrode for connecting with external circuitses；
Line layer includes several sub- line layers, is electrically connected by flip LED chips, two between two adjacent sub- line layers
Individual adjacent flip LED chips are connected by sub- line layer.
2. high-performance upside-down mounting COB encapsulating structures as claimed in claim 1, it is characterised in that several flip LED chips are connected
Form chip branch road, several chip branch circuit parallel connections.
3. high-performance upside-down mounting COB encapsulating structures as claimed in claim 1 or 2, it is characterised in that COB substrates also include being located at
The lower insulating barrier of the bottom surface of substrate layer.
4. high-performance upside-down mounting COB encapsulating structures as claimed in claim 1 or 2, it is characterised in that COB substrates also include being located at
Thermally conductive insulating layer between upper insulating barrier and line layer.
5. high-performance upside-down mounting COB encapsulating structures as claimed in claim 1 or 2, it is characterised in that the COB substrates and upside-down mounting
The top surface of LED chip is provided with box dam circle, box dam circle filled with the fluorescent glue for covering flip LED chips top surface.
6. high-performance upside-down mounting COB encapsulating structure preparation methods, are applied to high-performance upside-down mounting COB encapsulation as claimed in claim 1
Structure, specifically includes following steps：
S1, acquisition COB substrates；
Welding material is coated on S2, the chip welding electrode on COB substrates；
S3, coat insulating materials between two adjacent sub- line layers of the line layer of COB substrates；
S4, flip LED chips are placed on COB substrates corresponding position；
S5, COB substrates and flip LED chips are welded.
7. high-performance upside-down mounting COB encapsulating structure preparation methods as claimed in claim 6, it is characterised in that also include after S1
Following steps：
S1A, plasma cleaning is carried out to COB substrates.
8. high-performance upside-down mounting COB encapsulating structure preparation methods as claimed in claim 6, it is characterised in that also include after S5
Following steps：
S5A, ultrasonic wave cleaning is carried out to high-performance upside-down mounting COB encapsulating structures.
9. high-performance upside-down mounting COB encapsulating structure preparation methods as claimed in claim 6, it is characterised in that also include after S5
Following steps：
S5B, high-performance upside-down mounting COB encapsulating structures are dehumidified.
10. high-performance upside-down mounting COB encapsulating structure preparation methods as claimed in claim 6, it is characterised in that also include after S5
Following steps：
S5C, COB substrates and flip LED chips top surface coating fluorescent glue.
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| WO2019011198A1 (en) * | 2017-07-13 | 2019-01-17 | 东莞市国瓷新材料科技有限公司 | Ceramic module for integrated packaging of power semiconductor and manufacturing method therefor |
| CN111403344A (en) * | 2020-03-31 | 2020-07-10 | 苏州晶台光电有限公司 | Method for improving COB L ED display screen color block |
| CN111540732A (en) * | 2020-05-09 | 2020-08-14 | 中山市木林森电子有限公司 | COB light source and manufacturing method thereof |
| CN111668357A (en) * | 2019-03-06 | 2020-09-15 | 隆达电子股份有限公司 | Package body |
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| CN205264751U (en) * | 2015-12-15 | 2016-05-25 | 易美芯光（北京）科技有限公司 | Low thermal resistance LED light source |
| CN105655465A (en) * | 2016-04-07 | 2016-06-08 | 易美芯光（北京）科技有限公司 | COB (chip on board) light source packaging structure for LED and manufacture method of COB light source packaging structure |
| CN206349351U (en) * | 2016-12-20 | 2017-07-21 | 广州硅能照明有限公司 | High-performance upside-down mounting COB encapsulating structures |
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| CN105655465A (en) * | 2016-04-07 | 2016-06-08 | 易美芯光（北京）科技有限公司 | COB (chip on board) light source packaging structure for LED and manufacture method of COB light source packaging structure |
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| WO2019011198A1 (en) * | 2017-07-13 | 2019-01-17 | 东莞市国瓷新材料科技有限公司 | Ceramic module for integrated packaging of power semiconductor and manufacturing method therefor |
| CN111668357A (en) * | 2019-03-06 | 2020-09-15 | 隆达电子股份有限公司 | Package body |
| CN111403344A (en) * | 2020-03-31 | 2020-07-10 | 苏州晶台光电有限公司 | Method for improving COB L ED display screen color block |
| CN111540732A (en) * | 2020-05-09 | 2020-08-14 | 中山市木林森电子有限公司 | COB light source and manufacturing method thereof |
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Application publication date: 20170322 |