CN107482000A - A kind of LED light source and preparation method thereof - Google Patents
A kind of LED light source and preparation method thereof Download PDFInfo
- Publication number
- CN107482000A CN107482000A CN201710680713.0A CN201710680713A CN107482000A CN 107482000 A CN107482000 A CN 107482000A CN 201710680713 A CN201710680713 A CN 201710680713A CN 107482000 A CN107482000 A CN 107482000A
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- Prior art keywords
- adhesive layer
- fluorescent adhesive
- fluorescent
- light source
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention discloses a kind of LED light source, including：Substrate, at least one LED chip, the first fluorescent adhesive layer and the second fluorescent adhesive layer, substrate are provided with light-emitting area region, and LED chip is installed on the light-emitting area region on substrate；First fluorescent adhesive layer, the second fluorescent adhesive layer are coated with the light-emitting area region of substrate and/or LED chip；The wavelength of the transmitted wave of first fluorescent adhesive layer is longer than the wavelength of the transmitted wave of the second fluorescent adhesive layer and the second fluorescent adhesive layer is on the first fluorescent adhesive layer.Present invention also offers a kind of preparation method of LED light source.The present invention can not only avoid the cross-excitation between fluorescent material, effectively control fluorescent powder excitation spectrum, while lift product maximum visual efficiency, and lifting material light energy use efficiency, optimization light source are aobvious to be referred to, improves heat endurance, reduce color drift, reduce heat consumption.
Description
Technical field
The present invention relates to a kind of LED light source, more particularly to a kind of LED light source and preparation method thereof.
Background technology
At present, specular removal and the high aobvious finger quality light source index that always LED industry is pursued, but the row of LED encapsulation at present
The technical merit of industry can only often accomplish to improve one of index, and light efficiency exists conflicting with aobvious finger in most cases
Relation, this rises, and that disappear.
And it is dispensing (or point powder) technique in LED encapsulation to influence one of light efficiency and the aobvious major reason referred to.Current LED envelopes
Dress is most of directly to be mixed with packaging plastic using two kinds or more fluorescent material, is coated to luminescence chip surface, is directly passed through indigo plant
Light excites the fluorescent glue of mixing to light.Usually, the wavelength of the wavelength ratio transmitting light of exciting light is short, because exciting light is than transmitting
Light has higher energy (that is to say higher frequency).So, from the spectrogram of exciting light and transmitting light (such as Fig. 1 and 2 institutes
Show) in as can be seen that the spectrum of the exciting light of yellow-green fluorescence powder probably in 400nm-500nm, and the spectrum for launching light probably exists
470nm-650nm；The excitation spectrum of red fluorescence powder launches the spectrum of light probably in 590nm- probably in below 600nm
720nm.That is, blue light (it is the most frequently used excitation sources of LED) can excite yellow-green fluorescence powder, can also be excitated red
Fluorescent material；Some can be with excitated red fluorescent powder for the light of yellow-green fluorescence powder stimulated emission, and causes red fluorescence powder spectrum
Produce red shift；But the light of red fluorescence powder stimulated emission, it is impossible to excite yellow-green fluorescence powder.Conventional mixing point powder craft makes red
Together with fluorescent material and yellow-green fluorescence powder cross-mixing, when light source works, except common blue light excites yellowish green powder and rouge and powder
Beyond luminous, red fluorescence powder can also absorb the light of a part of yellow-green fluorescence powder stimulated emission (to the contributive ripple of vision efficiency
Section), and the feux rouges Red Shift Phenomena (to wave band of the vision efficiency without contribution) of rouge and powder stimulated emission is produced, and as luminous energy is changed
Efficiency, which reduces, can also bring certain heat energy to produce, and this phenomenon is also often referred to as Stokes effect.Therefore common process life
The LED light product-derived of production is usually present vision efficiency (LER) and conversion efficiency is high, color drift is unstable, product temperature is high, carrying
The problems such as not high-power.
The content of the invention
For overcome the deficiencies in the prior art, an object of the present invention is to provide a kind of LED light source, and it can solve the problem that
In the prior art there is the problems such as vision efficiency is not high, conversion efficiency is not high in LED light product-derived.
The second object of the present invention is to provide a kind of preparation method of LED light source, and it can solve the problem that LED in the prior art
The problems such as vision efficiency is not high, conversion efficiency is not high be present in light source product.
An object of the present invention adopts the following technical scheme that realization：
A kind of LED light source, including：Substrate, at least one LED chip, the first fluorescent adhesive layer and the second fluorescent adhesive layer, it is described
Substrate is provided with light-emitting area region, and the LED chip is installed on the light-emitting area region on substrate；First fluorescent adhesive layer, second
Fluorescent adhesive layer is coated with the light-emitting area region of substrate and/or LED chip；
The wavelength of the transmitted wave of first fluorescent adhesive layer is longer than the wavelength and second of the transmitted wave of the second fluorescent adhesive layer
Fluorescent adhesive layer is on the first fluorescent adhesive layer.
Further, a corral dam glue is additionally provided with the outer ring in the light-emitting area region of the substrate.
Further, in addition to transparent silica gel, the transparent silica gel coating are located at the lower section or second of the first fluorescent adhesive layer
The top of fluorescent adhesive layer.
Further, the LED chip is positive cartridge chip, flip-chip or vertical chip.
Further, the first fluorescent adhesive layer, the second fluorescent adhesive layer are by one or more same stimulated emission wave bands
Fluorescent material or fluorescent glue powder mixture.
Further, the particle radius of the mixture is 5-150um.
Further, the first fluorescent adhesive layer, the second fluorescent adhesive layer natural subsidence in solidification.
The second object of the present invention adopts the following technical scheme that realization：
A kind of preparation method of LED light source, comprises the following steps：
Make substrate circuit step：LED chip is fixedly mounted on the light-emitting area region of substrate, so as to form LED core
Plate base；
Box dam glue step is set：One corral dam glue is set on the outer ring in the light-emitting area region of LED core plate base；
Coating step；Applied respectively on LED core plate base according to the order from lower floor to upper strata successively in box dam cushion rubber
Glue-line is covered, and baking-curing is carried out to glue-line, forms LED light source；The glue-line is fluorescent adhesive layer and/or transparent silica gel.
Further, the fluorescent adhesive layer includes the first fluorescent adhesive layer and the second fluorescent adhesive layer, first fluorescent adhesive layer
Transmitted wave wavelength be longer than the second fluorescent adhesive layer transmitted wave wavelength and the second fluorescent adhesive layer coating be located at the first fluorescence
On glue-line；The transparent silica gel coating is located at the lower section of the first fluorescent adhesive layer or the top of the second fluorescent adhesive layer.
Further, the first fluorescent adhesive layer, the second fluorescent adhesive layer are by one or more same stimulated emission wave bands
Fluorescence rubber powder or fluorescent glue powder mixture.
Compared with prior art, the beneficial effects of the present invention are：
The invention provides a kind of LED light source, and it is by the layered coated to different phosphor material powders, arrangement, so as to keep away
Exempt from the cross-excitation between fluorescent material, effectively control fluorescent powder excitation spectrum, lift the maximum visual efficiency of product, improve material
Expect light energy use efficiency, optimization light source is aobvious to be referred to, and improves heat endurance, is reduced color drift, is reduced heat consumption etc..
Brief description of the drawings
Fig. 1 is the exciting light of yellow-green fluorescence powder provided by the invention and the spectrogram of transmitting light；
Fig. 2 is the exciting light of red fluorescence powder provided by the invention and the spectrogram of transmitting light；
Fig. 3 is the structural representation of preferred embodiment one provided by the invention；
Fig. 4 is the structural representation of preferred embodiment two provided by the invention；
Fig. 5 is the structural representation of preferred embodiment three provided by the invention；
Fig. 6 is the structural representation of preferred embodiment four provided by the invention；
Fig. 7 is the spectral shape design sketch of LED light source provided by the invention and conventional LED light source.
In figure：1st, substrate；2nd, box dam glue；3rd, LED chip；4th, the first fluorescent adhesive layer；5th, the second fluorescent adhesive layer；6th, transparent silicon
Glue.
Embodiment
Below, with reference to accompanying drawing and embodiment, the present invention is described further, it is necessary to which explanation is, not
Under the premise of afoul, new implementation can be formed between various embodiments described below or between each technical characteristic in any combination
Example.
Embodiment
A kind of LED light source, including substrate, LED chip, the first fluorescent adhesive layer and the second fluorescent adhesive layer, wherein the first fluorescence
The wavelength of the transmitted wave of glue-line is longer than the wavelength of the transmitted wave of the second fluorescent adhesive layer, and the coating of the first fluorescent adhesive layer is located at second
The lower floor of fluorescent adhesive layer.Such as first fluorescent adhesive layer be red fluorescence glue-line, the second fluorescent adhesive layer is yellow-green fluorescence glue-line.When
If during the wavelength for the transmitted wave that the wavelength of the transmitted wave of right first fluorescent adhesive layer is shorter than the second fluorescent adhesive layer, it is necessary to glimmering by second
Lower floor of the optical cement layer coating located at the first fluorescent adhesive layer.It that is to say, by the longer wavelengths of fluorescent adhesive layer of transmitted wave located at transmitting
The lower section of the shorter fluorescent adhesive layer of the wavelength of ripple.
Wherein LED chip is installed on the light-emitting area region of substrate, and the first fluorescent adhesive layer, the second fluorescent adhesive layer are pressed successively
According to sequential applications on the light-emitting area region and/or LED chip.It that is to say that LED chip is located at the light-emitting area area of substrate
On domain, and coat the first fluorescent adhesive layer first on light-emitting area region and LED chip, then coat the second fluorescent glue
Layer.In addition, LED chip can have multiple, gap is reserved between the adjacent LED chip of each two.When fluorescent adhesive layer coats
When on light-emitting area region and/or LED chip, it can be also filled in its gap.
Preferably, also coating is provided with box dam glue on the outer ring along the light-emitting area region of substrate, and the box dam glue is just
Fluorescent adhesive layer is fixed and is packaged together.
Wherein LED chip can be positive cartridge chip, flip-chip or vertical chip.
Preferably, the first fluorescent adhesive layer, the second fluorescent adhesive layer are by the glimmering of one or more same stimulated emission wave bands
The mixture that light powder or rubber powder mix, and its compound particles particle diameter is 1-2 times, and its radius is about in 5-150um.
In addition, the first fluorescent adhesive layer, the second fluorescent adhesive layer stand natural subsidence in solidification, the big portion of fluorescent material may be such that
It is distributed in fluorescent adhesive layer bottom.
Preferably, in addition to transparent silica gel, the transparent silica gel have good heat conductivility, and only light source does not provide well
Radiating effect, can also play a part of protect LED light source, reduce the loss of light.The transparent silica gel can be coated in the
The upper strata of two fluorescent adhesive layers, the lower floor of the first fluorescent adhesive layer can also be coated in.Transparent silica gel can also be by the second fluorescent glue
What layer was formed after natural subsidence.
According to the difference of the arrangement of different fluorescent adhesive layer, transparent silica gel, it is preferably carried out present invention also offers following
Example (embodiment that the present invention relates to certainly is not only confined to the preferred embodiment gone out given in the application), its is specific
It is described as follows：
As shown in figure 3, it is first preferred embodiment provided by the invention.LED chip 3 is installed on the light-emitting area area of substrate 1
On domain, and gap is provided between each two LED chip 3.The coating of first fluorescent adhesive layer 4 is located at light-emitting area area in substrate 1
In the gap of domain bottom and LED chip 3, its thickness is less than 150um.The coating of second fluorescent adhesive layer 5 is located at the first fluorescent adhesive layer 4
On, and the surface of LED chip 3 is covered, its thickness is less than 150um (in addition, the thickness value can also be according to specific need
Ask and be configured, be not merely only limited to 150um, similarly hereinafter.).Also set inside the present embodiment on the second fluorescent adhesive layer 5
Transparent silica gel 6, the heat for being so advantageous to LED light source quickly scatter away, and effectively improve the stability and reliability of light source.In addition,
Also coating sets a corral dam glue 2 on the outer ring in the light-emitting area region of substrate 1, so that the first fluorescent adhesive layer 4, second is glimmering
Optical cement layer 5, transparent silica gel 6 etc. are fixed in box dam glue 2.Meanwhile its preparation method is as follows：
S11, by LED chip installation diagram is installed as defined in position be fixed on the light-emitting area region of substrate, and by LED chip
Weld together with substrate, form complete LED core plate base；
S12, made a circle on LED core plate base with outer ring of the box dam glue along light-emitting area region, form a protection zone；
S13, the first fluorescent adhesive layer is coated in box dam cushion rubber, and to the first fluorescent adhesive layer baking-curing, now, first is glimmering
The thickness of optical cement layer is less than the thickness of LED chip；
S14, the second fluorescent adhesive layer is coated on the first fluorescent adhesive layer in box dam cushion rubber, and cover LED chip, and to
Two fluorescent adhesive layer baking-curings；
S15, transparent silica gel is coated on the second fluorescent adhesive layer in box dam cushion rubber, so as to be packaged into LED light source.
As shown in figure 4, it is the second preferred embodiment provided by the invention.LED chip 3 is installed on the light-emitting area area of substrate 1
On domain, and gap is provided between each two LED chip 3.The coating of first fluorescent adhesive layer 4 is located at light-emitting area area in substrate 1
In the gap of domain bottom and LED chip 3, its thickness is less than 150um.Second fluorescent adhesive layer 5 is located on the first fluorescent adhesive layer 4
And in the gap of LED chip 3, its thickness is less than 150um.Transparent silica gel 6 is also equipped with second fluorescent adhesive layer 5.In addition,
Also coating sets a corral dam glue 2 on the outer ring in the light-emitting area region of substrate 1, so that the first fluorescent adhesive layer 4, the second fluorescence
Glue-line 5, transparent silica gel 6 etc. are fixed in box dam glue 2.
Meanwhile its preparation method is as follows：
S21, by LED chip installation diagram is installed as defined in position be fixed on the light-emitting area region of substrate, and by LED chip
Weld together with substrate, form complete LED core plate base；
S22, made a circle on LED core plate base with outer ring of the box dam glue along light-emitting area region, form a protection zone；
S23, the first fluorescent adhesive layer is coated on LED core plate base, and to the first fluorescent adhesive layer baking-curing, now,
Its thickness of one fluorescent adhesive layer should be less than LED chip；
S24, the second fluorescent adhesive layer is coated on the first fluorescent adhesive layer in box dam cushion rubber, and the second fluorescent adhesive layer is toasted solid
Change, now, the thickness of the second fluorescent adhesive layer flushes with LED chip；
S25, transparent silica gel is coated on the second fluorescent adhesive layer in box dam cushion rubber, so as to be packaged into LED light source.
As shown in figure 5, it is third preferred embodiment provided by the invention.LED chip 3 is installed on the light-emitting area area of substrate 1
On domain, and gap is provided between each two LED chip 3.The coating of first fluorescent adhesive layer 4 is located at light-emitting area area in substrate 1
The gap of domain bottom and LED chip 3 and the surface for covering LED chip 3 so that LED chip 3 is in the first fluorescent adhesive layer 4
Between substrate 1.The coating of second fluorescent adhesive layer 5 is on the first fluorescent adhesive layer 4, and the box dam with setting on substrate 1
Glue 2 flushes.Because the second fluorescent adhesive layer 5 stands natural subsidence in solidification, so as to may be such that the first half of the second fluorescent adhesive layer 5
Transparent silica gel 6 can be played a part of by dividing.It that is to say that the present embodiment need not additionally coat transparent silica gel 6, can also realize transparent
The function of silica gel 6.In addition, also coating sets a corral dam glue 2 on the outer ring in the light-emitting area region of substrate 1, so that the
One fluorescent adhesive layer 4, the second fluorescent adhesive layer 5, transparent silica gel 6 etc. are fixed in box dam glue 2.Meanwhile its preparation method is as follows：
S31, by LED chip installation diagram is installed as defined in position be fixed on the light-emitting area region of substrate, and by LED chip
Weld together with substrate, form complete LED core plate base；
S32, made a circle on LED core plate base with outer ring of the box dam glue along light-emitting area region, form a protection zone；
S33, the first fluorescent adhesive layer, and the first fluorescent adhesive layer covering LED chip are coated on LED core plate base, and it is right
First fluorescent adhesive layer baking-curing；
S34, the second fluorescent adhesive layer, and the second fluorescent adhesive layer and box dam are coated on the first fluorescent adhesive layer in box dam cushion rubber
Glue flushes, and to the second fluorescent adhesive layer baking-curing, forms LED light source.
As described in Figure 6, it is third preferred embodiment provided by the invention.LED chip 3 is installed on the light-emitting area area of substrate 1
On domain, and gap is provided between each two LED chip 3.The coating of transparent silica gel 6 is located at light-emitting area region bottom in substrate 1
The gap of layer and LED chip 3 and cover the surface of LED chip 3 so that LED chip 3 be in transparent silica gel 6 and substrate 1 it
Between.For the coating of first fluorescent adhesive layer 4 on transparent silica gel 6, thickness is less than 150um；The coating of second fluorescent adhesive layer 5 is located at first
On fluorescent adhesive layer 4, thickness is less than 150um.In addition, also coating sets a corral on the outer ring in the light-emitting area region of substrate 1
Dam glue 2, so that the first fluorescent adhesive layer 4, the second fluorescent adhesive layer 5, transparent silica gel 6 etc. are fixed in box dam glue 2.
Meanwhile its preparation method is as follows：
S41, by LED chip installation diagram is installed as defined in position be fixed on the light-emitting area region of substrate, and by LED chip
Weld together with substrate, form complete LED core plate base；
S42, made a circle on LED core plate base with outer ring of the box dam glue along light-emitting area region, form a protection zone；
S43, transparent silica gel is coated in LED core plate base and box dam cushion rubber, and cause transparent silica gel covering LED core
Piece；
S44, the first fluorescent adhesive layer is coated in transparent silica gel in box dam cushion rubber, and to the first fluorescent adhesive layer baking-curing；
S45, the second fluorescent adhesive layer, and the second fluorescent adhesive layer and box dam are coated on the first fluorescent adhesive layer in box dam cushion rubber
Flush, and to the second fluorescent adhesive layer baking-curing, form LED light source.
The invention provides a kind of LED light source, and it is by the layered coated to different phosphor material powders, arrangement, so as to keep away
Exempt from the cross-excitation between fluorescent material, effectively control fluorescent powder excitation spectrum, lift the maximum visual efficiency of product, improve material
Expect light energy use efficiency, optimization light source is aobvious to be referred to, and improves heat endurance, is reduced color drift, is reduced heat consumption etc..
In addition, by the LED light source of layered coated technique provided by the invention making compared with the light source that common process makes,
As shown in fig. 7, the spectrum in the present invention has broader half-breadth high, it is meant that the aobvious finger of LED light source is higher；And spectrum exists
500-550um has higher relative light intensity value, it is meant that LED light source has more preferably visual effect.
Above-mentioned embodiment is only the preferred embodiment of the present invention, it is impossible to the scope of protection of the invention is limited with this,
The change and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed scope.
Claims (10)
- A kind of 1. LED light source, it is characterised in that including：Substrate, at least one LED chip, the first fluorescent adhesive layer and the second fluorescence Glue-line, the substrate are provided with light-emitting area region, and the LED chip is installed on the light-emitting area region on substrate；First fluorescence Glue-line, the second fluorescent adhesive layer are coated with the light-emitting area region of substrate and/or LED chip；The wavelength of the transmitted wave of first fluorescent adhesive layer is longer than the wavelength and the second fluorescence of the transmitted wave of the second fluorescent adhesive layer Glue-line is on the first fluorescent adhesive layer.
- 2. LED light source as claimed in claim 1, it is characterised in that：It is additionally provided with the outer ring in the light-emitting area region of the substrate One corral dam glue.
- 3. LED light source as claimed in claim 1, it is characterised in that：Also include transparent silica gel, the transparent silica gel coating is located at The lower section of first fluorescent adhesive layer or the top of the second fluorescent adhesive layer.
- 4. the LED light source as described in claim 1-3 any one, it is characterised in that：The LED chip is positive cartridge chip, fallen Cartridge chip or vertical chip.
- 5. the LED light source as described in claim 1-3 any one, it is characterised in that：First fluorescent adhesive layer, the second fluorescent adhesive layer It is by the fluorescent material or fluorescent glue powder mixture of one or more same stimulated emission wave bands.
- 6. LED light source as claimed in claim 5, it is characterised in that：The particle radius of the mixture is 5-150um.
- 7. the LED light source as described in claim 1-3 any one, it is characterised in that：First fluorescent adhesive layer, the second fluorescent adhesive layer The natural subsidence in solidification.
- 8. a kind of preparation method of LED light source, it is characterised in that comprise the following steps：Make substrate circuit step：LED chip is fixedly mounted on the light-emitting area region of substrate, so as to form LED core chip base Plate；Box dam glue step is set：One corral dam glue is set on the outer ring in the light-emitting area region of LED core plate base；Coating step；Successively according to the coating adhesive on LED core plate base respectively of the order from lower floor to upper strata in box dam cushion rubber Layer, and baking-curing is carried out to glue-line, form LED light source；The glue-line is fluorescent adhesive layer and/or transparent silica gel.
- 9. the preparation method of LED light source as claimed in claim 8, it is characterised in that：The fluorescent adhesive layer includes the first fluorescence Glue-line and the second fluorescent adhesive layer, the wavelength of the transmitted wave of first fluorescent adhesive layer are longer than the ripple of the transmitted wave of the second fluorescent adhesive layer The coating of long and the second fluorescent adhesive layer is on the first fluorescent adhesive layer；The transparent silica gel coating is located at the first fluorescent adhesive layer Lower section or the top of the second fluorescent adhesive layer.
- 10. the preparation method of LED light source as claimed in claim 9, it is characterised in that：First fluorescent adhesive layer, the second fluorescent glue Layer is by the fluorescence rubber powder or fluorescent glue powder mixture of one or more same stimulated emission wave bands.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710680713.0A CN107482000A (en) | 2017-08-10 | 2017-08-10 | A kind of LED light source and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710680713.0A CN107482000A (en) | 2017-08-10 | 2017-08-10 | A kind of LED light source and preparation method thereof |
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| CN107482000A true CN107482000A (en) | 2017-12-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111415922A (en) * | 2020-03-16 | 2020-07-14 | 广州硅能照明有限公司 | Novel L ED packaging method |
| CN112447896A (en) * | 2020-05-26 | 2021-03-05 | 开发晶照明（厦门）有限公司 | Photoelectric device and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474558A (en) * | 2013-09-27 | 2013-12-25 | 五邑大学 | LED packaging adhesive dispensing technology and LED chip packaging structure thereof |
| CN205104484U (en) * | 2015-10-28 | 2016-03-23 | 福建中科芯源光电科技有限公司 | Can promote long -range encapsulation white light LED color rendering index's light source module |
| CN205621765U (en) * | 2016-04-20 | 2016-10-05 | 厦门煜明光电有限公司 | White -light LED package structure |
| CN205752232U (en) * | 2016-05-09 | 2016-11-30 | 广州硅能照明有限公司 | A kind of COB light module |
| CN207217528U (en) * | 2017-08-10 | 2018-04-10 | 广州硅能照明有限公司 | A kind of LED light source |
-
2017
- 2017-08-10 CN CN201710680713.0A patent/CN107482000A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474558A (en) * | 2013-09-27 | 2013-12-25 | 五邑大学 | LED packaging adhesive dispensing technology and LED chip packaging structure thereof |
| CN205104484U (en) * | 2015-10-28 | 2016-03-23 | 福建中科芯源光电科技有限公司 | Can promote long -range encapsulation white light LED color rendering index's light source module |
| CN205621765U (en) * | 2016-04-20 | 2016-10-05 | 厦门煜明光电有限公司 | White -light LED package structure |
| CN205752232U (en) * | 2016-05-09 | 2016-11-30 | 广州硅能照明有限公司 | A kind of COB light module |
| CN207217528U (en) * | 2017-08-10 | 2018-04-10 | 广州硅能照明有限公司 | A kind of LED light source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111415922A (en) * | 2020-03-16 | 2020-07-14 | 广州硅能照明有限公司 | Novel L ED packaging method |
| CN112447896A (en) * | 2020-05-26 | 2021-03-05 | 开发晶照明（厦门）有限公司 | Photoelectric device and manufacturing method thereof |
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Application publication date: 20171215 |