CN103236487A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
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- CN103236487A CN103236487A CN2013101242060A CN201310124206A CN103236487A CN 103236487 A CN103236487 A CN 103236487A CN 2013101242060 A CN2013101242060 A CN 2013101242060A CN 201310124206 A CN201310124206 A CN 201310124206A CN 103236487 A CN103236487 A CN 103236487A
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- light
- luminescence component
- sulfur
- emitting diode
- fluorescent material
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- 239000002096 quantum dot Substances 0.000 claims abstract description 50
- 239000011593 sulfur Substances 0.000 claims abstract description 41
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 41
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000004020 luminiscence type Methods 0.000 claims description 41
- 239000000039 congener Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 239000002223 garnet Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 229910003564 SiAlON Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000009877 rendering Methods 0.000 abstract description 17
- 239000000843 powder Substances 0.000 abstract description 8
- 230000036541 health Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229920006335 epoxy glue Polymers 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229940065285 cadmium compound Drugs 0.000 description 2
- 150000001662 cadmium compounds Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000008621 organismal health Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Abstract
The invention discloses a light-emitting component, which comprises a light-emitting diode chip and an energy conversion layer, wherein the energy conversion layer comprises a plurality of sulfur-containing cadmium-free quantum dots and a plurality of fluorescent powder, the sulfur-containing quantum dots can generate red light when being excited, and the fluorescent powder can generate light rays in a specific wavelength range when being excited; in addition, the energy conversion layer is arranged at a position capable of receiving the light emitted by the light emitting diode chip and converts at least part of the light emitted by the light emitting diode chip into light in other wavelength ranges, so that the light emitting component can generate a light source with specific light color or white light with high color rendering, and the health is not harmed by using a cadmium-containing material.
Description
Technical field
The present invention relates to a kind of luminescence component, refer in particular to a kind of luminescence component with sulfur-bearing quantum dot and fluorescent material.
Background technology
Light-emitting diode (Light Emitting Diode; LED) the solid luminescent assembly of making for a kind of semi-conducting material has the characteristics of small size, low-power consumption and high reliability.Use the combination of III-V family chemical elements such as gallium phosphide, gallium nitride, by this compound semiconductor is applied voltage, make the hole meet under different electrode voltage effects with electronics and produce compound, at this moment electronics can drop to than the low energy rank, form with photon releases energy simultaneously, allow electric energy be converted to luminous energy, reach luminous effect.
Japan day inferior (Nichia) chemical company discloses a kind of yttrium-aluminium-garnet (Cerium-doped yttrium aluminum garnet that excites cerium to mix with blue LED chip in the U.S. Patent number US5998925 of application in 1996; Y
3Al
5O
12: Ce; YAG:Ce) fluorescent material can produce yellow giving out light, and this gold-tinted can produce white light with the blue light that light-emitting diode produces.The advantage of this white-light emitting assembly is that manufacture method is simple and cost is lower, has become the main flow of market development at present, yet because its spectrum lacks the ruddiness composition, so color rendering (Color Rendering Index; CRI) not good.
With regard to color rendering, if only use traditional blue LED chip to excite yellow fluorescent powder, its color rendering will be lower than 80.One of solution is to use polynary fluorescent material when preparation lumination of light emitting diode assembly, for example U.S. Patent Publication No. US2010/0163896 has disclosed the use blue light-emitting diode and has excited yellow and red fluorescence powder, and U.S. Patent number US6252254 disclosed the use blue light-emitting diode and excited green and red fluorescence powder, and its color rendering can be higher than 80.But the shortcoming of these devices is that the particle of red fluorescence powder is generally less, below encapsulation the time causes red fluorescence powder other fluorescent material then are settled down to above more easily being suspended in, and causes efficient to reduce.
Quantum dot (Quantum Dots; QDs) be a kind of nanocrystal (Nanocrystals) semi-conducting material, formed by II-VI, III-V or I-III-VI family element that they are different with general block (Bulk) characteristic of semiconductor.About 2～10 nanometers of quantum point grain diameter are equivalent to 10～50 atom width.Usually the valency of bulk semiconductor electricity band (Valence band) and conductive strips (Conduction band) can rank be to present the continuity state; Yet quantum point grain diameter is little, and the energy rank of valency electricity band and conductive strips all be to present discrete state, and this physical phenomenon is quantum confinement effect (Quantum confinement).Quantum dot was paid close attention to and is studied by scientist since the 1980's, had been successfully synthesized high-quality cadmium compound in 1993, and for example cadmium sulfide, cadmium selenide etc. accelerate the development in this field.Again because quantum dot has different size, thus the quantum dot of different-waveband position can be set, by the advantage of this set single wavelength and high-quantum efficiency, as splendid luminescent material.
Yet the quantum dot of existing broad research demonstration of past cadmium compound is the many shortcomings of tool still, and it causes the harm of biological health and environment because containing cadmium element.Therefore the present invention proposes a kind of luminescence component that uses the sulfur-bearing quantum dot, and it does not contain cadmium element and is the white-light emitting assembly with high color rendering.
Summary of the invention
Main purpose of the present invention, provide the luminescence component of a kind of tool sulfur-bearing quantum dot and fluorescent material, it adds the sulfur-bearing quantum dot in energy conversion layer, the light that allows light-emitting diode chip for backlight unit send can excite the sulfur-bearing quantum dot to send ruddiness, and collocation uses phosphor combination to reach the performance that luminescence component of the present invention can be emitted white light.
Another object of the present invention, provide the luminescence component of a kind of tool sulfur-bearing quantum dot and fluorescent material, its employed quantum dot is the structure of shell nuclear, shell is that zinc sulphide, kernel are the copper sulfide indium, do not contain cadmium element, therefore can not cause the harm of organism health and environment, have the feature of environmental protection.
To achieve the above object, the present invention has disclosed the luminescence component of a kind of tool sulfur-bearing quantum dot and fluorescent material, and it comprises: a light-emitting diode chip for backlight unit; And an energy conversion layer, placing the position that can receive this light-emitting diode chip for backlight unit emitted light, it is the colloid that comprises several sulfur-bearing quantum dots and several fluorescent material; Wherein, the ruddiness that the light that this light-emitting diode chip for backlight unit sends, these several sulfur-bearing quantum dots are excited and produce, and these several fluorescent material are excited the particular range of wavelengths light that produces after mixing, and can produce white light.By using the effect of this sulfur-bearing quantum dot, the color rendering of luminescence component will be supplied because of red light portion and obtain to promote.
Description of drawings
Fig. 1 is the structural representation of a kind of preferred embodiment of the present invention;
Fig. 2 is the sweep electron microscope figure of the sulfur-bearing quantum dot of a kind of preferred embodiment of the present invention;
Fig. 3 is that the light of all kinds of a kind of preferred embodiment of the present invention produces schematic diagram;
Fig. 4 is absorption and the spectrogram of giving out light of the sulfur-bearing quantum dot of a kind of preferred embodiment of the present invention;
Fig. 5 A is the electric laser spectrogram of prior art;
Fig. 5 B is the electric laser spectrogram of a kind of preferred embodiment of the present invention;
Fig. 6 is that the colourity of prior art and a kind of preferred embodiment of the present invention compares.
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, and the conversion on the structure that those of ordinary skill in the art makes according to these execution modes, method or the function includes in protection scope of the present invention.
Because the height of color rendering determines that can luminescence component provide the user comfortable illumination, therefore the present invention is directed to the luminescence component color rendering weak point that light-emitting diode constitutes, the luminescence component of this tool sulfur-bearing quantum dot and fluorescent material is provided, replaces passing product with its good color rendering and the feature of environmental protection.
At first, please refer to Fig. 1, the primary structure of embodiment of the invention luminescence component comprises a substrate 1; One light-emitting diode chip for backlight unit 2; One energy conversion layer 3; Several sulfur-bearing quantum dots 31; Several fluorescent material 32 and colloid 33.
In the embodiment of this figure, light-emitting diode chip for backlight unit 2 is a blue LED chip and is arranged on the substrate 1 that energy conversion layer 3 coats the surface of light-emitting diode chip for backlight unit 2 simultaneously.The main body of this energy conversion layer 3 is colloids 33, and central doping or uniformly dispersing sulfur-bearing quantum dot 31 and fluorescent material 32.
In the present embodiment, substrate 1 is the structure with bearing capacity, and it also with the function of heat radiation, can select to use ceramic substrate, silicon carbide substrate or aluminium nitride substrate etc.
2 body structures of light-emitting diode chip for backlight unit have first semiconductor layer, luminescent layer and second semiconductor layer in regular turn, each layer material mainly can be made of gallium nitride (GaN) and InGaN materials such as (InGaN), by imposing forward voltage, luminescent layer can produce particular range of wavelengths light such as blue light, purple light or ultraviolet light.In the present embodiment, adopt this blue LED chip 2 with other coloured light colour mixtures after make luminescence component integral body obtain emitting white light effect.
The composition of the energy conversion layer 3 of the embodiment of the invention, it evenly sneaks into or has mixed sulfur-bearing quantum dot 31 and fluorescent material 32 therein when by colloid 33 blue LED chip 2 being encapsulated.This sulfur-bearing quantum dot 31 is to comprise selection from the congeners of copper, indium, copper indium or the sulfide of its combination, as copper sulfide indium (CuInS
2) constitute, the cadmium element that does not contain possible health risk, its preferable constituted mode is to comprise that selection is the mode of shell from the congeners of zinc or zinc or the sulfide of its combination, as making shell with zinc sulphide (ZnS), be coated with the kernel that comprises that selection is formed from the sulfide of the congeners of copper, indium, copper indium or its combination, make kernel as the copper sulfide indium.This sulfur-bearing quantum dot 31 optimized particle size with core-shell structure are about 3～6 nanometers.This part can be with reference to figure 2, and it sees through the high sweep electron microscope figure that resolves for the set sulfur-bearing quantum dot of the present invention.
The luminescent layer of blue LED chip 2 can produce blue light and outwards advance after obtaining forward voltage, and it will pass through energy conversion layer 3 in advancing.Please refer to Fig. 3, after blue light met sulfur-bearing quantum dot 31, this sulfur-bearing quantum dot 31 will be excited and be produced ruddiness.In addition can be with reference to figure 4, it has disclosed sulfur-bearing quantum dot CuInS
2The absorption of/ZnS and emission spectrum, it can send the ruddiness of about 580～650 nanometers of wave-length coverage really.
With reference to figure 3, under blue light, sulfur-bearing quantum dot 31 that blue led chips 2 provides are stimulated the yellow light mix that produces and the ruddiness that produces and fluorescent material 32 are stimulated, the light that finally leaves energy conversion layer 3 will mix performance makes luminescence component integral body become the white-light emitting source, and have high color rendering, be suitable for illumination.In addition, the indigo plant among Fig. 3, red, yellow isochrome light path are signal usefulness, and the viewed light of user is real to be the mixed white light of three.
Then, please refer to Fig. 5 A, the electric laser spectrogram of its luminescence component for use blue LED chip 2 independent excitation yellow fluorescent powders 32 (being called the A form down), its color rendering only has 76, does not reach 80 level.By contrast, please refer to Fig. 5 B, the electric laser spectrogram of its luminescence component that has sulfur-bearing quantum dot 31 and fluorescent material 32 simultaneously for use blue light-emitting diode 2 excites (being called the B form down), as shown in the figure, its color rendering has been broken through 80 door and has been reached 86, tangible lifting is arranged, confirm to have good effect.
Please refer to Fig. 6, it is A form and the coordinate difference of B form on chromatic diagram, and as shown in the figure, the A form is the lower luminescence component of above-mentioned color rendering, and its coordinate is (0.3016,0.3259); The B form is the higher luminescence component of above-mentioned color rendering, and technology contents of the present invention just, its coordinate are (0.3370,0.3073) both colourities of showing and inequality.
Except structure explaination and effect proof, the production process of the luminescence component of this tool sulfur-bearing quantum dot and fluorescent material, disclose as follows here in the lump:
Step S1: disperse the sulfur-bearing quantum dot in chloroform, and mix with colloid, form a quantum dot glue;
Step S2: add fluorescent material in quantum dot glue and mix, form an epoxy glue, wherein, the quantitative proportion of fluorescent material and sulfur-bearing quantum dot is 1:2, while fluorescent material and sulfur-bearing quantum dot, and the percentage by weight of itself and colloid is 12%;
Step S3: place epoxy glue and carry out froth breaking in the vacuum Defoaming machine, the instrument parameter of this froth breaking process is: rotating speed 400 rpm, pressure 0.2MPa, 4 minutes time;
Step S4: place epoxy glue behind the froth breaking in syringe, and utilize point gum machine that epoxy glue is arranged on the blue LED chip;
Step S5: toast this assembly that is coated with epoxy glue in baking oven, temperature is 80 degree Celsius, 2 hours time;
Step S6: promote baking temperature to 150 degree Celsius, 1 hour time.
By these steps, can obtain the disclosed luminescence component with sulfur-bearing quantum dot and fluorescent material, provide the script ruddiness that general luminescence component lacks by the sulfur-bearing quantum dot, thereby promote its color rendering, allow this white-light emitting assembly give the user more comfortable lighting environment; And material of the present invention does not contain cadmium element, meets the demand in the environmental protection, and favourable area and the range of application that is extended to high environmental protection test stone has the economic benefit of essence.
Be to be understood that, though this specification is described according to execution mode, but be not that each execution mode only comprises an independently technical scheme, this narrating mode of specification only is for clarity sake, those skilled in the art should make specification as a whole, technical scheme in each execution mode also can form other execution modes that it will be appreciated by those skilled in the art that through appropriate combination.
Above listed a series of detailed description only is specifying at feasibility execution mode of the present invention; they are not in order to limiting protection scope of the present invention, allly do not break away from equivalent execution mode or the change that invention skill spirit does and all should be included within protection scope of the present invention.
Claims (19)
1. a luminescence component is characterized in that, comprising:
One light-emitting diode chip for backlight unit; And
One energy conversion layer comprises several sulfur-bearing quantum dots and several fluorescent material, and described several sulfur-bearing quantum dots are excited and can produce ruddiness, and described several fluorescent material are excited and can produce particular range of wavelengths light;
Wherein, described power conversion is placed on the position that can receive the light that described light-emitting diode chip for backlight unit sends, and converts the light that the described light-emitting diode chip for backlight unit of at least a portion sends to other wave-length coverage light.
2. luminescence component as claimed in claim 1 is characterized in that, also comprises a substrate, is arranged under the described light-emitting diode chip for backlight unit.
3. luminescence component as claimed in claim 1 is characterized in that, described several sulfur-bearing quantum dots are to comprise the congeners that is selected from copper, indium, copper indium or the sulfide of its combination.
4. luminescence component as claimed in claim 1 is characterized in that, described several sulfur-bearing quantum dots are copper sulfide indium (CuInS
2).
5. luminescence component as claimed in claim 1 is characterized in that, described several sulfur-bearing quantum dots comprise a shell and a kernel.
6. luminescence component as claimed in claim 5 is characterized in that, described shell is to comprise the congeners that is selected from zinc or zinc or the sulfide of its combination.
7. luminescence component as claimed in claim 6 is characterized in that, described shell is zinc sulphide (ZnS).
8. luminescence component as claimed in claim 5 is characterized in that, described kernel is to comprise that selection is from the congeners of copper, indium, copper indium or the sulfide of its combination.
9. luminescence component as claimed in claim 5 is characterized in that, described kernel is the copper sulfide indium.
10. luminescence component as claimed in claim 1 is characterized in that, the particle size of described several sulfur-bearing quantum dots is 3～6 nanometers.
11. luminescence component as claimed in claim 1 is characterized in that, the particle size of described several fluorescent material is 5～20 microns.
12. luminescence component as claimed in claim 1 is characterized in that, in the described energy conversion layer, the quantitative proportion of described several sulfur-bearing quantum dots and described several fluorescent material equals or is similar to be 2:1 or 1:2.
13. luminescence component as claimed in claim 1 is characterized in that, described several fluorescent material are oxide or nitride.
14. luminescence component as claimed in claim 13 is characterized in that, described oxide is that yttrium-aluminium-garnet is that fluorophor or silicate are fluorophor.
15. luminescence component as claimed in claim 13 is characterized in that, described nitride is to comprise that selection is from group of the lanthanides, silicon, aluminium, oxygen, the congeners of lanthanum sial oxygen or the nitride of its combination.
16. luminescence component as claimed in claim 13 is characterized in that, described nitride is La
3Si
6N
11: Ce or β-SiAlON:Eu.
17. luminescence component as claimed in claim 1 is characterized in that, described energy conversion layer does not contain cadmium.
18. luminescence component as claimed in claim 17 is characterized in that, described light-emitting diode chip for backlight unit blue light-emitting.
19. luminescence component as claimed in claim 18 is characterized in that, described several fluorescent material are excited and can produce gold-tinted or green glow.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101124366A TW201403878A (en) | 2012-07-06 | 2012-07-06 | Illuminating assembly |
| TW101124366 | 2012-07-06 |
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|---|---|
| CN103236487A true CN103236487A (en) | 2013-08-07 |
| CN103236487B CN103236487B (en) | 2016-08-31 |
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| CN105679894A (en) * | 2016-03-30 | 2016-06-15 | 深圳市聚飞光电股份有限公司 | Manufacture method of red quantum dot-based high-color gamut white-light LED lamp bead |
| CN105679921A (en) * | 2016-03-30 | 2016-06-15 | 深圳市聚飞光电股份有限公司 | Manufacture method of multiple-quantum dot-combined high-color gamut white-light LED lamp bead |
| CN105845810A (en) * | 2016-03-30 | 2016-08-10 | 深圳市聚飞光电股份有限公司 | Green-light quantum dot-based method for manufacturing high-color-gamut white-light LED lamp bead |
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| WO2017059627A1 (en) * | 2015-10-08 | 2017-04-13 | 深圳市华星光电技术有限公司 | Quantum dot layer patterning method and quantum dot color film preparation method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1761078A (en) * | 2004-10-14 | 2006-04-19 | 安捷伦科技公司 | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
| CN1812092A (en) * | 2004-12-10 | 2006-08-02 | 安捷伦科技有限公司 | Flash module with quantum dot light conversion |
| US20060244358A1 (en) * | 2005-05-02 | 2006-11-02 | Samsung Electro-Mechanics Co., Ltd. | White light emitting device |
| CN101812298A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Phosphorescent substance and luminescent device |
| CN101959933A (en) * | 2008-02-25 | 2011-01-26 | 纳米技术有限公司 | Semiconductor nanoparticle capping agents |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI398306B (en) * | 2009-12-24 | 2013-06-11 | Wei Han Lee | Method for coating fluorescence material |
| US8455898B2 (en) * | 2011-03-28 | 2013-06-04 | Osram Sylvania Inc. | LED device utilizing quantum dots |
-
2012
- 2012-07-06 TW TW101124366A patent/TW201403878A/en unknown
-
2013
- 2013-04-11 CN CN201310124206.0A patent/CN103236487B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1761078A (en) * | 2004-10-14 | 2006-04-19 | 安捷伦科技公司 | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
| CN1812092A (en) * | 2004-12-10 | 2006-08-02 | 安捷伦科技有限公司 | Flash module with quantum dot light conversion |
| US20060244358A1 (en) * | 2005-05-02 | 2006-11-02 | Samsung Electro-Mechanics Co., Ltd. | White light emitting device |
| CN101959933A (en) * | 2008-02-25 | 2011-01-26 | 纳米技术有限公司 | Semiconductor nanoparticle capping agents |
| CN101812298A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Phosphorescent substance and luminescent device |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201403878A (en) | 2014-01-16 |
| CN103236487B (en) | 2016-08-31 |
| TWI562407B (en) | 2016-12-11 |
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Effective date of registration: 20161025 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |