CN108417453A - A kind of rf micromechanical switch and production method - Google Patents
A kind of rf micromechanical switch and production method Download PDFInfo
- Publication number
- CN108417453A CN108417453A CN201810066726.3A CN201810066726A CN108417453A CN 108417453 A CN108417453 A CN 108417453A CN 201810066726 A CN201810066726 A CN 201810066726A CN 108417453 A CN108417453 A CN 108417453A
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- Prior art keywords
- contact
- cantilever beam
- contact site
- swing arm
- micromechanical switch
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
Abstract
The present invention relates to field of electronic devices, disclose a kind of rf micromechanical switch, including：Horizontally disposed substrate, and the signal wire contact being arranged above substrate and earth wire contact further include：The cantilever beam that signal wire, the drive signal line being arranged above substrate move in the horizontal direction, signal wire include the second contact site of the first contact site and the setting of face earth wire contact of face signal wire contact setting；Cantilever beam drives the first contact site activation signal line contact, and drives the second contact site far from earth wire contact, so that rf micromechanical switch is closed；Cantilever beam driving the first contact site of driving drives the second contact site to contact earth wire contact far from signal wire contact, so that rf micromechanical switch disconnects.The rf micromechanical switch that embodiments of the present invention provide, can reduce insertion loss, improve the isolation and power handling capability of high band.
Description
Technical field
The present invention relates to field of electronic devices, more particularly to a kind of rf micromechanical switch and preparation method thereof.
Background technology
As microwave or radio-frequency communication technology are fast-developing, to improve the performance and integrated level of subsystem, complete machine, to micro-
Wave/rf micromechanical switch has urgent demand.Microwave/radio-frequency micromechanical switch and such as field-effect of traditional microwave component are brilliant
Body pipe, ferrite or PIN diode are compared, and have many advantages, such as that working frequency is high, power consumption is smaller, insertion loss is small, isolation is high.
There are two types of the execution mechanisms of microwave/radio-frequency micromechanical switch：Electrostatic interaction and electromagnetic action.It studies more and compares at present
Ripe is electrostatic drive metal contact micro-machinery switch, and construction of switch includes mainly three parts, is cantilever beam respectively or outstanding
Epistasis bridge, driving electrodes, microwave signal line.
Inventor has found that at least there are the following problems in the prior art：Electrostatic drive radio-frequency micro-machinery in the prior art is opened
Close that insertion loss is larger and bad in the isolation of high band and power handling capability, limit subsystem integrated level into one
Step improves and its application field.Therefore, it is necessary to provide a kind of structure of new rf micromechanical switch to solve the above problems.
Invention content
The purpose of the present invention is to provide a kind of rf micromechanical switches, reduce insertion loss, improve radio-frequency micro-machinery and open
The isolation and power handling capability of pass.
In order to solve the above technical problems, embodiments of the present invention provide a kind of rf micromechanical switch, including：It is horizontal
The substrate of setting, and signal wire contact square on the substrate and earth wire contact are set, the rf micromechanical switch is also
Including：Signal wire square on the substrate is set, the cantilever beam that the driving signal wire moves in the horizontal direction, the letter
Number line includes the second contact site of the first contact site and the setting of face earth wire contact of face signal wire contact setting；The cantilever
Beam drives first contact site to contact the signal wire contact, and drives second contact site far from the earth wire contact,
So that the rf micromechanical switch is closed；The cantilever beam drives first contact site far from the signal wire contact, and
Second contact site is driven to contact the earth wire contact, so that the rf micromechanical switch disconnects.
Embodiment of the present invention in terms of existing technologies, when switch is closed, first contact site and the signal
For line contact to which the rf micromechanical switch be connected, second contact site and the earth wire contact are separate, and second connects
The distance between contact portion and ground wire bigger reduce the insertion loss of switch, meanwhile, when switching disconnection, first contact
Portion and the signal wire contact are separate, therefore the coupled capacitor between the signal wire and the signal wire contact reduces, and
Second contact site contacts well with the earth wire contact, and the useless radiofrequency signal of coupling is imported ground wire, realizes that radio frequency is micro-
Mechanical switch is in the preferable isolation of high band and power handling capability.
In addition, the conductive line further includes the first swing arm and the second swing arm for intersecting with first swing arm, the letter
Number line contact and first contact site are two, and two first make contacts are located at both ends of first swing arm and remote
Junction from the first swing arm and the second swing arm.
In addition, first swing arm is mutually perpendicular to second swing arm.So set, the row for other component of being more convenient for
Row are conducive to the rationalization arrangement layout of the internal structure of rf micromechanical switch.
In addition, the earth wire contact and second contact site are two, two second contacts site are in described
The both ends of second swing arm and the junction of separate second swing arm and the first swing arm.
In addition, the earth wire contact and second contact site are one, second contact site is in described second
One end of swing arm and the junction of separate second swing arm and the first swing arm.
In addition, be provided with insulating medium layer in the substrate, the quantity of the cantilever beam be it is multiple, and the cantilever beam with
First contact site and second contact site correspond, and one end of the cantilever beam is fixed on the insulating medium layer
On, the other end of the cantilever beam is free end, and the free end drives corresponding first contact site or described second connects
Contact portion is swung in the horizontal direction.Since cantilever beam is swung in the horizontal direction, not displacement in the vertical direction, from
And the space on vertical direction can be saved, the vertical thickness of rf micromechanical switch is reduced, rf micromechanical switch is conducive to
Miniaturization Design.
In addition, the conductive line is arranged on the cantilever beam, first contact site and second contact site difference
Side in the free end of the corresponding cantilever beam is set, and the signal wire contact and the earth wire contact are respectively set
In the position close to the cantilever beam free end.So set, in the deformation that cantilever beam occurs, the first contact site and second connects
Contact portion has shift length as big as possible, in the case of needing to meet predetermined displacement distance, cantilever in this kind of design scheme
Driving voltage smaller needed for beam.
In addition, further including being arranged on each cantilever beam to drive the corresponding cantilever beam to move in the horizontal direction
Piezoelectric driving plate, each piezoelectric driving plate and first contact site or described second on the corresponding cantilever beam
Contact site is located on cantilever beam two sides opposite in the horizontal direction.
Description of the drawings
Fig. 1 is the dimensional structure diagram of the rf micromechanical switch in first embodiment of the invention；
Fig. 2 is the sectional view of the A-A along Fig. 1；
Fig. 3 is the partial enlarged view at B in Fig. 2；
Fig. 4 is the flow chart of the preparation method of the rf micromechanical switch in second embodiment of the invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to each reality of the present invention
The mode of applying is explained in detail.However, it will be understood by those skilled in the art that in each embodiment of the present invention,
Many technical details are proposed in order to make reader more fully understand the present invention.But even if without these technical details and base
In the various changes and modifications of following embodiment, each claim technical side claimed of the present invention can also be realized
Case.
The first embodiment of the present invention is related to a kind of rf micromechanical switches 100, as shown in Figure 1, Figure 2, Figure 3 shows, including
Substrate 11, signal wire contact 12, earth wire contact 13, conductive line 14 and cantilever beam 15.Substrate 11 is horizontally disposed, signal wire contact
12, earth wire contact 13 and conductive line 14 are arranged above substrate 11, and cantilever beam 15 drives conductive line 14 to move in the horizontal direction.
Conductive line 14 includes the second contact that the first contact site 141 that face signal wire contact 12 is arranged and face earth wire contact 13 are arranged
Portion 142.Cantilever beam 15 drives 141 activation signal line contact 12 of the first contact site, and the second contact site 142 is driven to be touched far from ground wire
Point 13, so that rf micromechanical switch 100 is closed；Cantilever beam 15 drives the first contact site 141 far from signal wire contact 12, and drives
Dynamic second contact site 142 contacts earth wire contact 13, so that rf micromechanical switch 100 disconnects.
Embodiment of the present invention in terms of existing technologies, due to switch be closed when, the first contact site 141 and signal
Line contact 12 contacts well, and the second contact site 142 and earth wire contact 13 are separate, the second contact site 142 withGround wire 18Between away from
From bigger, the insertion loss of switch is reduced, meanwhile, when switching disconnection, the first contact site 141 is remote with signal wire contact 12
From, therefore the coupled capacitor between conductive line 14 and signal wire contact 12 reduces, and the second contact site 142 and earth wire contact 13
Contact is good, and the useless radiofrequency signal of coupling is imported ground wire 18, realize rf micromechanical switch 100 high band preferably every
From degree and power handling capability.
It should be noted that under practical application situation, the conductive line 14 includes having multiple swing arms of contact site, and each
The contact site of swing arm is respectively defined as the first contact site 141 above-mentioned, the second contact site 142, in rf micromechanical switch
It is contacted respectively under 100 working conditions for being closed or disconnecting or far from signal wire contact 12 and earth wire contact 13.Specifically, exist
In present embodiment, the conductive line 14 further includes the first swing arm 143 and the second swing arm for intersecting with first swing arm 143
144, the signal wire contact 12 and first contact site 141 are two, and two first make contacts are located at described the
The both ends of one swing arm 143 and the junction of separate first swing arm 143 and the second swing arm 144.The earth wire contact 13 and described
Two contact sites 142 can be two, and two second contact sites 142 are located at both ends of second swing arm 144 and separate
The junction of second swing arm 144 and the first swing arm 143, with ground conductive with by the useless radiofrequency signal coupled import ground wire,
Realize preferable isolation and power handling capability under high band.Can understand, when the earth wire contact 13 and described
Second contact site 142 can equally reach said effect when being one, at this point, second contact site 142 is located at described the
One end of two swing arms 144 and the junction of separate second swing arm 144 and the first swing arm 143.
In addition, the relative position of the first swing arm 143 and the second swing arm 144 is not particularly limited, the two can be with random angle
Degree intersection.Preferably, in the present embodiment, first swing arm 143 is mutually perpendicular to second swing arm 144.So set
It sets, the arrangement for other component of being more convenient for, is conducive to the rationalization arrangement layout of the internal structure of rf micromechanical switch 100.
The effect of cantilever beam 15 in the present embodiment is the first swing arm 143 of support and the second swing arm 144 and drives first
Contact site 141 and the movement of the second contact site 142.Specifically, insulating medium layer 16, the cantilever are provided in the substrate 11
The quantity of beam 15 is multiple, and the cantilever beam 15 and first contact site 141 and second contact site 142 1 are a pair of
It answers, one end of the cantilever beam 15 is fixed on the insulating medium layer 16, and the other end of the cantilever beam 15 is free end
151, the free end 151 drives corresponding first contact site 141 or second contact site 142 to put in the horizontal direction
It is dynamic.Since cantilever beam 15 is swung in the horizontal direction, not displacement in the vertical direction, so as to save vertical side
Upward space reduces the vertical thickness of rf micromechanical switch 100, is conducive to the Miniaturization Design of rf micromechanical switch 100.
It is noted that the conductive line 14 is arranged when on the cantilever beam 15,141 He of the first contact site
Second contact site 142 is separately positioned on the side of the free end 151 of the corresponding cantilever beam 15, the signal wire
Contact 12 and the earth wire contact 13 are separately positioned on close to the position of 15 free end 151 of the cantilever beam.So set, outstanding
When the deformation that arm beam 15 occurs, the first contact site 141 and the second contact site 142 have shift length as big as possible, are needing
In the case of meeting predetermined displacement distance, the driving voltage smaller in this kind of design scheme needed for cantilever beam 15.Meanwhile first
Apart from farther when contact site 141 or the second contact site 142 and the contact of corresponding contact are more good or disconnect, further increase
Isolation and power handling capability of the rf micromechanical switch 100 in high band.
In order to provide the driving force for driving the first swing arm 143 and the second swing arm 144 to swing, radio-frequency micro-machinery to cantilever beam 15
Switch 100 can also include being arranged on each cantilever beam 15 to drive the corresponding cantilever beam 15 to transport in the horizontal direction
Dynamic piezoelectric driving plate 17.In present embodiment, each piezoelectric driving plate 17 and the institute on the corresponding cantilever beam 15
It states the first contact site 141 or second contact site 142 is located at the both sides opposite in the horizontal direction of the cantilever beam 15
On face.It is, of course, understood that each piezoelectric driving plate 17 connects with described first on the corresponding cantilever beam 15
Contact portion 141 or second contact site 142 can also be located on the same side.
It is noted that signal wire contact 12, earth wire contact 13, signal wire material include but not limited to golden (Au),
Copper (Cu), aluminium (Al), nickel (Ni), tungsten (W) etc.；The material of substrate 11 includes but not limited to High Resistivity Si, ceramics, polymer or glass
Deng；The material of insulating medium layer 16 includes but not limited to silica, polysilicon, silicon nitride or polymer etc.；The pressure of piezoelectric patches
Electric layer material includes but not limited to aluminium nitride (AlN), zinc oxide (ZnO) or lead zirconate titanate (PZT) etc.；The material of cantilever beam 15
Including but not limited to silica, monocrystalline silicon, silicon nitride or polymer etc..
Second embodiment of the present invention provides a kind of preparation method of rf micromechanical switch 100, as shown in figure 4,
Including：
S10：By Low Pressure Chemical Vapor Deposition insulating medium layer 16 is deposited in silicon chip surface.
Specifically, in step slo, the silicon in dielectric substrate is first cleaned with acidic cleaning solution and alkaline cleaning fluid respectively
SOI (Silicon on insulator) substrate, is later again rinsed well substrate with deionized water；Followed by low pressure
Learn vapor deposition apparatus is in SOI Substrate front deposition thicknessSilica coating as mask layer；Substrate just
Resist coating on face, photolithographic exposure form litho pattern in the place for needing etched recesses, and the silicon chip after development is dried is put into
Silicon dioxide etching liquid, wet etching go out the mask window of needs.
S11：15 structure of cantilever beam is formed by dry method deep silicon etching method.
Specifically, in step s 11, SOI Substrate is put into dry method deep silicon etching equipment and is etched
The vertical sidewall groove of depth.
S12：It is impregnated using hydrofluoric acid solution and discharges 15 structure of cantilever beam.
Specifically, in step s 12, SOI Substrate is put into the hydrofluoric acid solution of low concentration after the completion of etching and is removed
The silicon dioxide layer of 15 lower section of cantilever beam, completes the release of 15 structure of switch cantilever beam.
S13：Lower electrode metal layer, piezoelectric film and upper electrode metal layer are deposited by vacuum vapour deposition or magnetron sputtering method,
And lower electrode, top electrode are formed by photoetching process.
Specifically, in step s 13, apply photoresist as binding material by SOI substrate 11 and mask layer first
(Shadow mask) is fixed.Under the covering of mask layer, using vacuum evaporation equipment or sputtering equipment in insulating medium layer
It is sequentially prepared on 16The titanium (Ti) and platinum (Pt) layer of thickness form electrode composite layer under Ti/Pt；After the completion will
Substrate, which is put into the acetone soln of heating, dissolves photoresist, is later again rinsed well substrate with deionized water.It uses
Identical step is prepared on the surface of lower electrode using sputtering equipmentThe PZT piezoelectric films of thickness, then exist
Annealing polarization is carried out under conditions of 700C.Then vacuum evaporation or magnetron sputtering apparatus is utilized to prepare again on piezoelectric film The Pt layers of thickness are to form upper electrode metal film layer.
S14：Microwave metal transmission line is formed by vacuum vapour deposition or magnetron sputtering method.
Specifically, in step S14, apply photoresist as binding material by SOI substrate 11 and mask layer first
(Shadow mask) is fixed.Under the covering of mask layer, using vacuum evaporation equipment or sputtering equipment in substrate surface and
It is sequentially depositing the Ti of 0.01 μ m thick and the Au layers of 2 μ m thicks on side wall, forms Ti/Au composite layer microwave transmission lines.
S15：It is impregnated and is removed using acetone soln, absolute ethyl alcohol and deionized water is used in combination to be cleaned.
Specifically, in step S15, substrate is put into the acetone soln of heating and photoresist is dissolved, later
Substrate is rinsed well with absolute ethyl alcohol and deionized water again.Substrate after cleaning, which is put into baking oven, dries.
It will be understood by those skilled in the art that the respective embodiments described above are to realize specific embodiments of the present invention,
And in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit and scope of the present invention.
Claims (8)
1. a kind of rf micromechanical switch, including horizontally disposed substrate, and signal wire square on the substrate is set and is touched
Point and earth wire contact, which is characterized in that the rf micromechanical switch further includes：Be arranged on the substrate square conductive line,
The cantilever beam for driving the conductive line to move in the horizontal direction, the conductive line include the first of face signal wire contact setting
Second contact site of contact site and the setting of face earth wire contact；
The cantilever beam drives first contact site to contact the signal wire contact, and drives second contact site far from institute
Earth wire contact is stated, so that the rf micromechanical switch is closed；
The cantilever beam drives first contact site far from the signal wire contact, and drives the second contact site contact institute
Earth wire contact is stated, so that the rf micromechanical switch disconnects.
2. rf micromechanical switch according to claim 1, which is characterized in that the conductive line further include the first swing arm with
And the second swing arm intersected with first swing arm, the signal wire contact and first contact site are two, two institutes
It states first make contact and is located at the both ends of first swing arm and the junction far from the first swing arm and the second swing arm.
3. rf micromechanical switch according to claim 2, which is characterized in that first swing arm and second swing arm
It is mutually perpendicular to.
4. rf micromechanical switch according to claim 3, which is characterized in that the earth wire contact and second contact
Portion is two, and two second contacts site are in the both ends of second swing arm and far from the second swing arm and the first swing arm
Junction.
5. rf micromechanical switch according to claim 3, which is characterized in that the earth wire contact and second contact
Portion is one, and second contact site is in one end of second swing arm and far from the handing-over of the second swing arm and the first swing arm
Place.
6. rf micromechanical switch according to claim 1, which is characterized in that be provided with dielectric in the substrate
The quantity of layer, the cantilever beam is multiple, and the cantilever beam and first contact site and second contact site one are a pair of
It answers, one end of the cantilever beam is fixed on the insulating medium layer, and the other end of the cantilever beam is free end, the freedom
End drives corresponding first contact site or second contact site to swing in the horizontal direction.
7. rf micromechanical switch according to claim 6, which is characterized in that the conductive line is arranged in the cantilever beam
On, first contact site and second contact site are separately positioned on the side of the free end of the corresponding cantilever beam
Face, the signal wire contact and the earth wire contact are separately positioned on close to the position of the cantilever beam free end.
8. rf micromechanical switch according to claim 7, which is characterized in that further include being arranged in each cantilever beam
On piezoelectric driving plate to drive the corresponding cantilever beam to move in the horizontal direction, each piezoelectric driving plate with it is corresponding
First contact site or second contact site on the cantilever beam are located at cantilever beam phase in the horizontal direction
To two sides on.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810066726.3A CN108417453B (en) | 2018-01-24 | 2018-01-24 | Radio frequency micro mechanical switch and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810066726.3A CN108417453B (en) | 2018-01-24 | 2018-01-24 | Radio frequency micro mechanical switch and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108417453A true CN108417453A (en) | 2018-08-17 |
| CN108417453B CN108417453B (en) | 2020-05-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810066726.3A Active CN108417453B (en) | 2018-01-24 | 2018-01-24 | Radio frequency micro mechanical switch and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000842A (en) * | 2006-01-10 | 2007-07-18 | 三星电子株式会社 | MEMS switch |
| KR20090123487A (en) * | 2008-05-28 | 2009-12-02 | 광운대학교 산학협력단 | Piezoelectric rf mems switch and fabrication method thereof |
| CN102324344A (en) * | 2011-05-27 | 2012-01-18 | 东南大学 | Radio-frequency micromechanical switch with bidirectional push-pull comb-tooth unit |
| CN105098305A (en) * | 2015-08-27 | 2015-11-25 | 清华大学 | Distributed single-resistor attenuator |
| CN107437484A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of RF MEMS Switches with spring beam contact |
-
2018
- 2018-01-24 CN CN201810066726.3A patent/CN108417453B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000842A (en) * | 2006-01-10 | 2007-07-18 | 三星电子株式会社 | MEMS switch |
| KR20090123487A (en) * | 2008-05-28 | 2009-12-02 | 광운대학교 산학협력단 | Piezoelectric rf mems switch and fabrication method thereof |
| CN102324344A (en) * | 2011-05-27 | 2012-01-18 | 东南大学 | Radio-frequency micromechanical switch with bidirectional push-pull comb-tooth unit |
| CN105098305A (en) * | 2015-08-27 | 2015-11-25 | 清华大学 | Distributed single-resistor attenuator |
| CN107437484A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of RF MEMS Switches with spring beam contact |
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| Publication number | Publication date |
|---|---|
| CN108417453B (en) | 2020-05-15 |
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