CN107426908A - A kind of low pressure large area, high-density plasma generation device and production method - Google Patents
A kind of low pressure large area, high-density plasma generation device and production method Download PDFInfo
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- CN107426908A CN107426908A CN201710569131.5A CN201710569131A CN107426908A CN 107426908 A CN107426908 A CN 107426908A CN 201710569131 A CN201710569131 A CN 201710569131A CN 107426908 A CN107426908 A CN 107426908A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
Abstract
The present invention provides a kind of low pressure large area, high-density plasma generation device and production method.Plasma generating device includes vacuum system, plasma generating system and pedestal；Vacuum system includes vacuum chamber, vavuum pump, vacuum butterfly valve and vacuum gauge；Plasma generating system includes upper dielectric-slab, lower dielectric-slab, low-frequency ac power, high frequency RF power source, Top electrode and bottom electrode, upper dielectric-slab is embedded the side for deviating from pedestal in lower dielectric-slab, bottom electrode is coated between upper dielectric-slab and lower dielectric-slab, upper dielectric-slab away from bottom electrode and is provided with Top electrode with bottom electrode corresponding section, and insulating materials is provided between Top electrode and upper dielectric-slab；Low-frequency ac power is connected with bottom electrode, and high frequency RF power source is connected with bottom electrode, Top electrode grounding.The apparatus structure is simple, can be compared with low pressure, realizing large area, high-density plasma electric discharge based on dielectric barrier discharge technology and double frequency capacitive coupling technology.
Description
Technical field
The present invention relates to plasma technique, more particularly to a kind of low pressure large area, high-density plasma to produce dress
Put and production method.
Background technology
Plasma technique is in the industrial applications such as manufacture of material surface modifying, semiconductor equipment, environmental protection etc.
Have been obtained for being widely applied.In recent years, what it showed in terms of the military aviations such as the stealthy, radar communication of target applies valency
Value, make the new focus of plasma technique application field.
One of dielectric barrier discharge, its architectural feature is that at least one electrode is covered by insulating medium layer, dielectric
Limitation electric current freely increases, and it is a kind of typical nonequilibrium state gas to spark discharge or arc discharge transition to prevent electric discharge
Electric discharge, electric discharge is more stable, and caused plasma temperature, medium density, be widely used at present ozone synthesis,
The fields such as material surface modifying, aircraft drag reduction and exhaust-gas treatment.
In the past few decades, capacitively coupled plasma has been widely used in the etching and deposition of film.Hold
Property coupled plasma is made up of two parallel-plate electrodes, and wherein electrode radius is generally r0~0.2m, electrode spacing l
~(3~5) cm, and apply a radio-frequency power supply on electrode, typical radio frequency discharge frequency is 13.56MHz, can be at two
Plasma is produced between electrode.
Double frequency capacitively coupled plasma be grow up on the basis of single-frequency capacitively coupled plasma it is a kind of new
Plasma source.It uses a high frequency electric source and a low-frequency power to drive plasma jointly, overcomes single-frequency capacitive coupling
Close and the limitation that the flux of ion and energy on substrate are unable to independent control is reached in electric discharge.The power supply of two different frequencies can connect
It is connected on same electrode, can also be connected on different electrodes.According to Kim et al. to double frequency capacitively coupled plasma
Analog result, the density of high frequency electric source power control plasma, the energy of low-frequency power power decision ion.
Radio frequency discharge air pressure typically in mTorr-Torr scopes, when air pressure is than wanting high, needs higher input power
Electric discharge can be realized；And dielectric barrier discharge easily occurs under above-mentioned air pressure, but it is relatively low to produce plasma density.These factors
It all greatly limit the realization of large area, high-density plasma device.
The content of the invention
It is an object of the present invention to for the problems of existing large-area high-density plasma device, propose a kind of
Low pressure large area, high-density plasma generation device, the apparatus structure is simple, and its structure is based on dielectric barrier discharge technology
With double frequency capacitive coupling technology, compared with low pressure, realize large area, high-density plasma electric discharge.
To achieve the above object, the technical solution adopted by the present invention is：A kind of low pressure large area, high-density plasma
Generation device, including vacuum system, plasma generating system and pedestal；
The vacuum system includes vacuum chamber, vavuum pump, vacuum butterfly valve and vacuum gauge, the vacuum chamber and vavuum pump
Connected by vacuum butterfly valve, vacuum gauge is placed in the side wall on the outside of vacuum chamber；The vacuum chamber and vavuum pump be large area,
Vacuum environment needed for the generation offer of high-density plasma, vacuum gauge detection vacuum environment air pressure；
The pedestal is located at the bottom on the inside of vacuum chamber；
The plasma generating system include upper dielectric-slab, lower dielectric-slab, low-frequency ac power, high frequency RF power source,
Top electrode and bottom electrode, the lower dielectric-slab are placed on pedestal, and the upper dielectric-slab, which is embedded, deviates from the one of pedestal in lower dielectric-slab
Side, is coated with bottom electrode between the upper dielectric-slab and lower dielectric-slab, the upper dielectric-slab is away from bottom electrode and relative with bottom electrode
Should place be provided with Top electrode, be provided with insulating materials between the Top electrode and upper dielectric-slab, the Top electrode and bottom electrode it
Between distance adjusted by insulating materials；The low-frequency ac power is connected with bottom electrode, and provides low-frequency ac power, described
High frequency RF power source is connected with bottom electrode, and provides HFRF power, Top electrode grounding.
Further, the through hole being provided with for wearing wire that the lower dielectric-slab coordinates with base central, it is described to lead
Line is used to connect high frequency RF power source and bottom electrode.
Further, it is coated with bottom electrode between the upper dielectric-slab and lower dielectric-slab：The upper dielectric-slab is flat board, described
Two layers of groove is carved with lower dielectric-slab, lower bay places bottom electrode, and upper strata groove places upper dielectric-slab.
Further, the groove shapes are one kind in rectangle, polygon, circle, ellipse or racetrack.
Further, the Top electrode and bottom electrode are shaped as in rectangle, polygon, circle, ellipse or racetrack
One kind.
Further, the Top electrode is shaped as mesh electrode, and the bottom electrode is mesh electrode or plane electrode.
Further, be shaped as in hexagon, circle, rectangle, rhombus or irregular shape the one of the mesh electrode
Kind.
Another object of the present invention also discloses a kind of generation large area, the method for high-density plasma gas ions,
The large area of use, high-density plasma generation device include being embedded between dielectric-slab on reactor bottom pedestal
Bottom electrode, Top electrode on the other side are suspended on bottom electrode by insulating materials, and the production method includes：
Apply low-frequency ac power to bottom electrode；
Apply HFRF power to bottom electrode；
Top electrode makees grounding；
Plasma is driven jointly by the power supply of two different frequencies, and wherein low-frequency ac power produces plasma, high
Frequency radio-frequency power supply produces highdensity plasma on its basis.
Further, the low-frequency ac frequency is less than or equal to 10kHz, and the high-frequency radio frequency frequency is more than or equal to
13.56MHz。
Low pressure large area of the present invention, high-density plasma generation device are simple and reasonable for structure, compact, with existing skill
Art compares with advantages below：
Plasma generating device of the present invention can be existing arbitrary medium discharge-blocking device.The present invention by using
The power supply of two different frequencies drives electric discharge jointly, and (low-frequency ac power is connected with high frequency RF power source with bottom electrode, there is provided low
Frequency AC power and HFRF power, breakdown working gas (air) and maintain electric discharge) form be incorporated into atmospheric pressure Jie
In matter barrier discharge plasma, preferably to regulate and control and optimize plasma device so that plasma generating device is stable
It is operated within the scope of broader discharge parameter, has widened its application, improves application effect.
Brief description of the drawings
Fig. 1 is large area of the present invention, high-density plasma generation device structural representation；
Fig. 2 is the mesh electrode structural representation used in embodiment.
Embodiment
The present invention is further described with reference to embodiments：
Embodiment 1
Present embodiment discloses a kind of large area based on dielectric barrier discharge technology and double frequency capacitive coupling discharging technology,
High-density plasma generation device, the device can produce suitable plasma.
Low pressure large area, high-density plasma generation device structure as depicted in figs. 1 and 2, including vacuum system, etc.
System and pedestal 5 occur for gas ions.
The vacuum system includes vacuum chamber 1, vavuum pump 2, vacuum butterfly valve 3 and vacuum gauge 4, the vacuum chamber 1 with
Vavuum pump 2 is connected by vacuum butterfly valve 3, and vacuum gauge 4 is placed in the side wall in the outside of vacuum chamber 1；The vacuum chamber 1 and vacuum
Vacuum environment needed for pump 2 is large area, high-density plasma provides, vacuum gauge 4 detect vacuum environment air pressure；
The pedestal 5 is located at the bottom of the inner side of vacuum chamber 1；
The plasma generating system includes low-frequency ac power 12, high frequency RF power source 13, lower dielectric-slab 6, upper Jie
Scutum 8, bottom electrode 7, Top electrode 9 and insulating materials 11.
The lower dielectric-slab 6 is placed on the pedestal 5 of the bottom of vacuum chamber 1.In the pedestal 5 and lower dielectric-slab 6
Centre is drilled with aperture, places the wire of connection low-frequency ac power 12 and high frequency RF power source 13.Two are carved with the lower dielectric-slab 6
Layer groove, the groove are rectangle, and lower bay places bottom electrode 7, and upper strata groove places upper dielectric-slab 8；The shape of Top electrode 9 with
The bottom electrode 7 is adapted, and the electrode fixing device 10 of fixed Top electrode 9 is provided between Top electrode 9 and upper dielectric-slab 8.
Different materials can be selected in the dielectric-slab, and the present embodiment Top electrode 9 uses mesh electrode, and the mesh electrode is square
Shape, do grounding；Bottom electrode 7 uses plate electrode.Bottom electrode is connected to low-frequency ac power 12 and high-frequency radio frequency electricity simultaneously
On source 13, in sequence using low-frequency ac power 12 and high frequency RF power source 13, the plasma of parameter needed for generation.
The present embodiment large area, the operation principle of high-density plasma generation device are as follows：
Step A：Sparking electrode is included into upper dielectric-slab 8, lower dielectric-slab 6, Top electrode 9, bottom electrode 7 in advance to fix with electrode
Device 10 is placed on pedestal 5.
Step B：Open vavuum pump 2 and vacuum butterfly valve 3 in succession, by vacuum chamber 1 be extracted into needed for vacuum and maintain that (limit is true
Air pressure is 1.6mbar).Complete the preparation of plasma generating device electric discharge.
Step C：High frequency RF power source 13 is opened, after opening low pressure preheating 3-5min, opens high pressure.Open low-frequency ac power
12, suitable frequency 5kHz is selected, applying low-frequency ac power makes background air discharge；Application HFRF power, enhanced discharge,
Produce plasma.
Embodiment 2
The present embodiment discloses a kind of large area, high-density plasma generation device, its structure and 1 basic phase of embodiment
Together, unlike, the present embodiment further groove is shaped as circle, and Top electrode uses mesh electrode, and the mesh electrode is circle, is connect
Ground processing；Bottom electrode is also using circular mesh electrode.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of low pressure large area, high-density plasma generation device, it is characterised in that including vacuum system, plasma
System and pedestal occur for body；
The vacuum system includes vacuum chamber, vavuum pump, vacuum butterfly valve and vacuum gauge, and the vacuum chamber passes through with vavuum pump
Vacuum butterfly valve is connected, and vacuum gauge is placed in the side wall on the outside of vacuum chamber；
The pedestal is located at the bottom on the inside of vacuum chamber；
The plasma generating system includes upper dielectric-slab, lower dielectric-slab, low-frequency ac power, high frequency RF power source, upper electricity
Pole and bottom electrode, the lower dielectric-slab are placed on pedestal, and the upper dielectric-slab is embedded the side for deviating from pedestal in lower dielectric-slab, institute
State and bottom electrode be coated between dielectric-slab and lower dielectric-slab, the upper dielectric-slab away from bottom electrode and with bottom electrode corresponding section
Top electrode is provided with, insulating materials is provided between the Top electrode and upper dielectric-slab；The low-frequency ac power and bottom electrode
Connection, and low-frequency ac power is provided, the high frequency RF power source is connected with bottom electrode, and provides HFRF power, upper electricity
Pole grounding.
2. low pressure large area, high-density plasma generation device according to claim 1, it is characterised in that under described
The through hole being provided with for wearing wire that dielectric-slab and base central coordinate, the wire be used to connecting high frequency RF power source and
Bottom electrode.
3. low pressure large area, high-density plasma generation device according to claim 1, it is characterised in that on described
Bottom electrode is coated between dielectric-slab and lower dielectric-slab：The upper dielectric-slab is flat board, and two layers of groove is carved with the lower dielectric-slab,
Lower bay places bottom electrode, and upper strata groove places upper dielectric-slab.
4. low pressure large area, high-density plasma generation device according to claim 3, it is characterised in that described recessed
Groove shape is one kind in rectangle, polygon, circle, ellipse or racetrack.
5. according to the low pressure large area of claim 1 or 3, high-density plasma generation device, it is characterised in that described
One kind being shaped as in rectangle, polygon, circle, ellipse or racetrack of Top electrode and bottom electrode.
6. according to the low pressure large area of claim 1 or 3, high-density plasma generation device, it is characterised in that described
Top electrode is shaped as mesh electrode, and the bottom electrode is mesh electrode or plane electrode.
7. low pressure large area, high-density plasma generation device according to claim 6, it is characterised in that the net
One kind being shaped as in hexagon, circle, rectangle, rhombus or irregular shape of shape electrode.
8. a kind of generation large area, the production method of high-density plasma, it is characterised in that including：
Apply low-frequency ac power to bottom electrode；
Apply HFRF power to bottom electrode；
Top electrode makees grounding；
Plasma is driven jointly by the power supply of two different frequencies, and wherein low-frequency ac power produces plasma, and high frequency is penetrated
Frequency power produces highdensity plasma on its basis.
9. large area, the production method of high-density plasma are produced according to claim 8, it is characterised in that described low
Frequency a-c cycle is less than or equal to 10kHz.
10. large area, the production method of high-density plasma are produced according to claim 8, it is characterised in that the height
Frequency rf frequency is more than or equal to 13.56MHz.
Priority Applications (1)
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| CN201710569131.5A CN107426908A (en) | 2017-07-13 | 2017-07-13 | A kind of low pressure large area, high-density plasma generation device and production method |
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| CN201710569131.5A CN107426908A (en) | 2017-07-13 | 2017-07-13 | A kind of low pressure large area, high-density plasma generation device and production method |
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Cited By (5)
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| CN108322991A (en) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | A kind of semiclosed normal pressure double frequency large area glow discharge experimental provision |
| CN108682611A (en) * | 2018-05-17 | 2018-10-19 | 大连理工大学 | A kind of electrode improving plasma in process uniformity |
| CN109077103A (en) * | 2018-09-21 | 2018-12-25 | 华南理工大学 | A kind of meat product preservation device and meat product shelf life extension method |
| CN112888130A (en) * | 2021-01-19 | 2021-06-01 | 西安交通大学 | Low-temperature plasma generating device and method for fruit and vegetable fresh-keeping |
| CN113204930A (en) * | 2021-04-07 | 2021-08-03 | 哈尔滨工业大学 | Equivalent circuit suitable for single-frequency and double-frequency driving atmospheric pressure dielectric barrier dispersion discharge electrical characteristics and calculation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108322991A (en) * | 2018-01-08 | 2018-07-24 | 青海师范大学 | A kind of semiclosed normal pressure double frequency large area glow discharge experimental provision |
| CN108682611A (en) * | 2018-05-17 | 2018-10-19 | 大连理工大学 | A kind of electrode improving plasma in process uniformity |
| CN108682611B (en) * | 2018-05-17 | 2020-03-13 | 大连理工大学 | Electrode for improving uniformity of process plasma |
| CN109077103A (en) * | 2018-09-21 | 2018-12-25 | 华南理工大学 | A kind of meat product preservation device and meat product shelf life extension method |
| CN112888130A (en) * | 2021-01-19 | 2021-06-01 | 西安交通大学 | Low-temperature plasma generating device and method for fruit and vegetable fresh-keeping |
| CN112888130B (en) * | 2021-01-19 | 2022-04-19 | 西安交通大学 | Low-temperature plasma generating device and method for fruit and vegetable fresh-keeping |
| CN113204930A (en) * | 2021-04-07 | 2021-08-03 | 哈尔滨工业大学 | Equivalent circuit suitable for single-frequency and double-frequency driving atmospheric pressure dielectric barrier dispersion discharge electrical characteristics and calculation method thereof |
| CN113204930B (en) * | 2021-04-07 | 2023-04-11 | 哈尔滨工业大学 | Calculation method suitable for single-frequency and double-frequency driving atmospheric pressure dielectric barrier dispersion discharge electrical characteristic equivalent circuit |
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