CN112888130B - Low-temperature plasma generating device and method for fruit and vegetable fresh-keeping - Google Patents
Low-temperature plasma generating device and method for fruit and vegetable fresh-keeping Download PDFInfo
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- CN112888130B CN112888130B CN202110069972.6A CN202110069972A CN112888130B CN 112888130 B CN112888130 B CN 112888130B CN 202110069972 A CN202110069972 A CN 202110069972A CN 112888130 B CN112888130 B CN 112888130B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- A—HUMAN NECESSITIES
- A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
- A23B—PRESERVING, e.g. BY CANNING, MEAT, FISH, EGGS, FRUIT, VEGETABLES, EDIBLE SEEDS; CHEMICAL RIPENING OF FRUIT OR VEGETABLES; THE PRESERVED, RIPENED, OR CANNED PRODUCTS
- A23B7/00—Preservation or chemical ripening of fruit or vegetables
- A23B7/015—Preserving by irradiation or electric treatment without heating effect
Abstract
The application discloses a low-temperature plasma generating device and method for fruit and vegetable fresh-keeping, which are used for solving the problem that the existing device for sterilizing fruits and vegetables by using low-temperature plasma cannot efficiently and stably generate the low-temperature plasma. The device comprises: a low-temperature plasma generation module; the low-temperature plasma generating module comprises a blocking dielectric plate, a rhombic mesh electrode and a flat electrode; the first surface of the rhombic net electrode is in contact with the first side surface of the blocking dielectric plate, and the first surface of the flat plate electrode is in contact with the second side surface of the blocking dielectric plate; the first diagonal lengths of a plurality of rhombic grids contained in the rhombic mesh electrode are all 1mm, and the second diagonal lengths are all 2 mm; the blocking dielectric plate is made of aluminum nitride (AlN). According to the low-temperature plasma generating device, the blocking dielectric plate made of the AlN material is selected, the diagonal line of the rhombic grid is the rhombic net-shaped electrode with the size of 1mm multiplied by 2mm, and the low-temperature plasma can be efficiently and stably generated.
Description
Technical Field
The application relates to the technical field of fruit and vegetable preservation, in particular to a low-temperature plasma generating device and method for fruit and vegetable preservation.
Background
Compared with the traditional fruit and vegetable preservation technology, the non-thermal processing technology which is started in recent years is to use low-temperature plasma for fruit and vegetable preservation, the temperature of the non-thermal processing technology is close to the room temperature, the micro-organisms attached to the surfaces of the fruits and vegetables can be killed, the ethylene gas synthesized by the fruits and vegetables is degraded, the metabolism of the fruits and vegetables is inhibited, and the non-thermal processing technology has the advantages of high efficiency, no pollution, no residue, no thermal damage, remarkable bacteriostatic effect and the like, and has very good application prospect.
In recent years, with the rise of fruit and vegetable fresh-keeping by using low-temperature plasma, a plurality of devices for fruit and vegetable sterilization by using low-temperature plasma appear, but most of the devices for fruit and vegetable sterilization by using low-temperature plasma can not efficiently and stably generate low-temperature plasma due to the complex structure of a plasma generating module and the low utilization rate of the electrode area.
Disclosure of Invention
The embodiment of the application provides a low-temperature plasma generating device and method for fruit and vegetable fresh-keeping, and aims to solve the problem that the existing device for sterilizing fruits and vegetables by using low-temperature plasma cannot efficiently and stably generate low-temperature plasma.
On the one hand, the embodiment of the application provides a low temperature plasma generating device for fruit vegetables are fresh-keeping, and the device includes: a low-temperature plasma generation module; the low-temperature plasma generating module comprises a blocking dielectric plate, a rhombic mesh electrode and a flat electrode; the first surface of the rhombic net electrode is in contact with the first side surface of the blocking dielectric plate, and the first surface of the flat plate electrode is in contact with the second side surface of the blocking dielectric plate; the rhombic mesh electrode comprises a plurality of rhombic meshes, wherein the first diagonal length of the rhombic meshes is 1mm, and the second diagonal length of the rhombic meshes is 2 mm; the blocking dielectric plate is made of aluminum nitride (AlN).
According to the low-temperature plasma generating device for fruit and vegetable fresh-keeping provided by the embodiment of the application, the rhombic meshed electrode is selected as the electrode structure of the low-temperature plasma generating module, so that the low-temperature plasma generating device can efficiently and stably generate low-temperature plasma; the reason is that the circumference of the rhombic grid is the largest when the area of the grid is fixed, so the discharge area can be the largest by selecting the rhombic net electrode. The aluminum nitride AlN blocking dielectric plate is further selected, the diagonal size of a plurality of diamond grids contained in the diamond mesh electrode is 1mm multiplied by 2mm, namely, the mechanical strength of the low-temperature plasma generation module is ensured, the discharge heat of the low-temperature plasma generation module is reduced, the heat dissipation performance is increased, the thermal expansion degree is reduced, the efficiency of the low-temperature plasma generation device for generating the low-temperature plasma is optimal, so that the low-temperature plasma generation device can better kill microorganisms attached to the surfaces of fruits and vegetables, the ethylene gas synthesized by the fruits and vegetables is degraded, the metabolism of the fruits and vegetables is inhibited, and the fruits and vegetables can obtain better fresh-keeping effect.
In one implementation of the present application, the material of the diamond-shaped mesh electrode is AgCu 28; the material of the flat plate electrode is AgCu 28.
The AgCu28 electrical contact material is innovatively adopted to manufacture the diamond mesh electrode and the flat plate electrode in the embodiment of the application, and the AgCu28 has the characteristics of good electrical and thermal conductivity, burning resistance, wear resistance, fusion welding resistance, stable chemical property and high mechanical strength, and is very in line with the application requirements of the embodiment of the application; in addition, the AgCu28 electrical contact material is easier to process because it has a lower melting point than either silver or copper.
In one implementation of the present application, the shape of the diamond-shaped mesh electrode is the same as the shape of the plate electrode; the area of the first surface of the rhombic net electrode is equal to that of the first surface of the flat plate electrode; the contact positions of the first surface of the rhombic net-shaped electrode on the first side surface of the blocking dielectric plate and the contact positions of the first surface of the flat plate electrode on the second side surface of the blocking dielectric plate are symmetrical relative to the blocking dielectric plate.
The diamond-shaped mesh electrode and the plate electrode are symmetrical relative to the contact position of the blocking dielectric plate, the contact position is symmetrical, so that discharging can be carried out earlier, current pulses are denser, discharging power is higher, transmission charges are more, energy of low-temperature plasma is higher, activity is stronger, and therefore the low-temperature plasma is generated by the low-temperature plasma generating device more efficiently, and the effect of keeping fruits and vegetables fresh is improved.
In one implementation manner of the present application, the contact manner between the first surface of the diamond-shaped mesh electrode and the first side surface of the blocking dielectric plate is PCB printing; the contact mode of the first surface of the flat electrode and the second side surface of the blocking dielectric plate is PCB printing; electrode welding points are arranged on the rhombic mesh electrodes, and electrode welding points are arranged on the flat plate electrodes; wherein, the electrode welding point is used for connecting the low-temperature plasma generating module with the voltage providing module.
The embodiment of the application adopts the PCB printing to realize the contact of the rhombic meshed electrode with the blocking dielectric plate and the flat electrode with the blocking dielectric plate, and directly bonds the electrode to the surface of the blocking dielectric plate at high temperature, thereby greatly reducing the uneven contact degree between the rhombic meshed electrode and the blocking dielectric plate as well as between the flat electrode and the blocking dielectric plate, and effectively solving the problem of breakage caused by local overheating due to uneven contact of the blocking dielectric plate.
In one implementation of the present application, the second surface of the diamond-shaped mesh electrode is covered with an insulating anti-corrosion layer; the second surface of the flat plate electrode is covered with an insulating anti-corrosion layer.
According to the embodiment of the application, the insulating anti-corrosion layers are covered on the surfaces of the diamond electrode and the flat electrode, so that the possibility that the surfaces of the exposed diamond electrode and the exposed flat electrode are ablated and oxidized in the discharging process is effectively avoided, the corrosion resistance, the wear resistance and the stability of the low-temperature plasma generating module are enhanced, and the service life of the low-temperature plasma generating device is prolonged.
In one implementation of the present application, the second surface of the plate electrode is further covered with a thermally conductive plate.
The embodiment of the application is used for further enhancing the heat dissipation capacity of the low-temperature plasma generating device, improving the stability and the service life of the low-temperature plasma generating device, increasing the discharging uniformity of the low-temperature plasma generating module and additionally arranging the heat conducting plate below the surface of the flat plate electrode.
In one implementation of the present application, the mesh line width of the diamond mesh electrode is 0.3 mm; the thickness of the blocking dielectric plate is 0.5 mm.
In one implementation of the present application, the apparatus further comprises a voltage providing module; the voltage supply module comprises a power supply and a booster circuit; the power supply is connected with the booster circuit; the booster circuit is used for converting voltage provided by the power supply into high-frequency alternating-current voltage; the power supply comprises at least one of the following items: commercial AC power supply and DC battery power supply.
In one implementation of the present application, the peak value of the high frequency alternating voltage is greater than 5.5 kv.
On the other hand, the embodiment of the application also provides a low-temperature plasma generating method for fruit and vegetable fresh-keeping, and the low-temperature plasma generating device for fruit and vegetable fresh-keeping is applied, and the method comprises the following steps: the voltage supply module supplies power to the low-temperature plasma generation module through the electrode welding point; the low-temperature plasma generation module generates an electric field based on the rhombic mesh electrode and the flat plate electrode; based on the electric field, the low-temperature plasma generating device generates low-temperature plasma.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a structural diagram of a low-temperature plasma generating device for fruit and vegetable preservation according to an embodiment of the present disclosure;
fig. 2 is a schematic cross-sectional structure view of a low-temperature plasma generation module according to an embodiment of the present disclosure;
FIG. 3 shows a blocking dielectric plate made of Al according to an embodiment of the present invention2O3The discharge voltage and discharge power relationship diagram of the low-temperature plasma generation module;
fig. 4 is a graph illustrating a relationship between a discharge voltage and a discharge power of a low-temperature plasma generation module, in which a blocking dielectric plate is made of AlN according to an embodiment of the present disclosure;
fig. 5 is a schematic front structural diagram of a low-temperature plasma generation module according to an embodiment of the present disclosure;
fig. 6 is a schematic reverse structure diagram of a low-temperature plasma generation module according to an embodiment of the present disclosure;
fig. 7 is a schematic diagram of a power supply structure of a voltage providing module according to an embodiment of the present disclosure;
fig. 8 is a schematic diagram of another power supply structure of a voltage providing module according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
For the low-temperature plasma fruit and vegetable fresh-keeping technology, the core of the low-temperature plasma fruit and vegetable fresh-keeping technology is a low-temperature plasma generating module. How to generate low-temperature plasma with lower voltage peak and lower power consumption in the atmosphere becomes the key of the current fresh-keeping device development. However, the low-temperature plasma generation module for fruit and vegetable fresh-keeping disclosed at present has the defects of high discharge voltage, insufficient utilization of electrode area, loose contact between an electrode and a medium, easy oxidation and corrosion of the electrode and the like. For example, the plasma sterilization device disclosed in patent No. CN201520300025.3 for use in refrigerator storage room, the plasma coupling photocatalytic method and system disclosed in patent No. CN201310179679.0 for removing ethylene in fresh-keeping storehouse for vegetables and fruits, based on corona discharge principle, the discharge is easily converted into penetrating spark discharge, is difficult to control, burns vegetables and fruits, and may cause damage to equipment itself and operators, and for example, the continuous fresh-keeping treatment equipment for vegetables and fruits and the using method disclosed in patent No. CN201810894243.2, although the utilization rate of the electrode area is increased, the discharge starting voltage is high, and the fresh-keeping device fixes the mesh electrode on the fixing frame in a mechanical manner, if the electrode is loosened, unnecessary discharge may occur between the two gaps, and also may cause local increase of heat productivity.
In addition, the low-temperature plasma generating module for fresh keeping disclosed at present does not take any protective measures for the electrodes, the exposed electrodes are directly exposed in the air, and the discharge process can cause the unfavorable phenomena of metal ablation, oxidation, rusting and the like on the surfaces of the electrodes along with the increase of the service time, so that the high-efficiency and stable generation of the low-temperature plasma can not be ensured.
The embodiment of the application provides a low-temperature plasma generating device and method for fruit and vegetable fresh-keeping, and aims to solve the problem that the existing device for sterilizing fruits and vegetables by using low-temperature plasma cannot efficiently and stably generate low-temperature plasma.
The technical solutions proposed in the embodiments of the present application are described in detail below with reference to the accompanying drawings.
Fig. 1 is a structural diagram of a low-temperature plasma generating device for fruit and vegetable fresh-keeping provided by an embodiment of the present application. As shown in fig. 1, a low-temperature plasma generating device 100 for fruit and vegetable preservation provided by the embodiment of the present application includes: a voltage supply module 101 and a low-temperature plasma generation module 102.
As shown in fig. 1, in a low-temperature plasma generating device 100 for fruit and vegetable preservation provided by the embodiment of the present application, a voltage providing module 101 is connected to a low-temperature plasma generating module 102. When the low-temperature plasma generating device is used, the direct starting voltage providing module 101 provides high-frequency alternating-current voltage for the low-temperature plasma generating module 102, so that the low-temperature plasma generating module 102 discharges, collision reaction of free electrons and gas molecules in air is accelerated, and low-temperature plasma is generated. The voltage supply module 101 is used for supplying high-frequency alternating voltage to the low-temperature plasma generation module 102; the low-temperature plasma generating module 102 is used for discharging under high-frequency alternating voltage, so that collision reaction of free electrons and gas molecules in air is accelerated, low-temperature plasma is generated, microorganisms attached to the surfaces of fruits and vegetables are killed, ethylene gas synthesized by the fruits and vegetables is degraded, and metabolism of the fruits and vegetables is inhibited.
The low-temperature plasma generation module according to the embodiment of the present application will be described in more detail with reference to fig. 2.
Fig. 2 is a schematic cross-sectional structure view of a low-temperature plasma generation module according to an embodiment of the present disclosure. In fig. 2, 201 denotes a diamond mesh electrode, 202 denotes a plate electrode, 203 denotes a barrier dielectric plate, 204 denotes an insulating corrosion prevention layer, and 205 denotes a heat conductive plate.
As shown in fig. 2, in the low-temperature plasma generation module provided in the embodiment of the present application, a first surface of a diamond-shaped mesh electrode is in contact with a first side surface of a blocking dielectric plate, and a first surface of a plate electrode is in contact with a second side surface of the blocking dielectric plate. The rhombic mesh electrode comprises a plurality of rhombic meshes, the diagonal dimension of the rhombic meshes is 1mm multiplied by 2mm (the length of a first diagonal is 1mm, the length of a second diagonal is 2mm), and the blocking dielectric plate is made of aluminum nitride (AlN).
It should be noted that, after the voltage is applied to the low-temperature plasma generation module, the discharge occurs at the edge of the electrode, and the mesh-shaped electrode can greatly increase the perimeter of the electrode and fully utilize the limited area, so that the low-temperature plasma can be generated more efficiently by selecting the mesh-shaped electrode. When the area of the grid is fixed, the circumference of the rhombic grid is the largest, so that the discharge area can be the largest by selecting the rhombic net electrode. In order to reduce the discharge starting voltage of the low-temperature plasma generation module, increase the discharge intensity of the low-temperature plasma generation module, and improve the low-temperature plasma generation rate, the size of the rhombic grid and the material and thickness of the blocking dielectric plate need to be optimized. The blocking dielectric plate needs to have the characteristics of high melting point, large dielectric constant, high breakdown voltage, good mechanical property, good thermal conductivity and stable chemical property. The size of the rhombic grid needs to accord with a discharge rule, and is not suitable to be too large or too small, because when the size of the rhombus is too large, gaps among filaments in the rhombic grid are too large, so that the surface is not fully utilized, and the proportion of a discharge area on the surface of the blocking dielectric plate is not high; when the size of the rhombus is too small, the grids are too dense, and because the grids of the rhombus mesh electrode are equipotential, the grids can mutually influence each other to weaken the electric field intensity therebetween, so that the electric field intensity required by air gap discharge cannot be achieved. In addition, when the size of the rhombus is too small, the space charge and the surface charge generated by partial area discharge interact with each other, so that the discharge of the surrounding area is inhibited, and the generation of low-temperature plasma is not facilitated.
Further, Al2O3Relative dielectric constant epsilon of the blocking dielectric plate made of material and the blocking dielectric plate made of AlN materialrdAre all larger than ∈rd9.8 and 8.6 respectively, and the electric field intensity is inversely proportional to the relative dielectric constant according to the principle of conservation of electric flux, that is, the electric field intensity in the air gap is epsilon of the electric field intensity in the blocking dielectric plate due to the existence of the blocking dielectric platerdThe higher the relative dielectric constant of the barrier dielectric, the higher the discharge intensity under the action of dielectric polarization charges, and the low-temperature plasmaThe higher the efficiency of daughter production. In addition, the two blocking dielectric plates containing the Al materials have higher thermal conductivity and thermal stability, good chemical stability and mechanical property and are suitable to be used as blocking dielectrics of devices. For Al2O3The discharge characteristics of the blocking dielectric plate made of AlN and the blocking dielectric plate made of AlN in different sizes are shown in fig. 3 and 4.
FIG. 3 shows a blocking dielectric plate made of Al according to an embodiment of the present invention2O3The discharge voltage and discharge power relationship diagram of the low-temperature plasma generation module; fig. 4 is a graph illustrating a relationship between a discharge voltage and a discharge power of a low-temperature plasma generation module, in which a blocking dielectric plate is made of AlN according to an embodiment of the present application. The grid line widths (widths of diamond grid edges) of the diamond grids of the low-temperature plasma generation module to be researched are unified to be 0.3mm, and the diagonal sizes of the diamond grids are four types as follows: the method comprises the following steps: 1mm × 2mm, ②: 2mm × 4mm, ③: 3mm × 5mm, and (iv): 4mm multiplied by 8mm, and the thickness of the blocking dielectric plate is 1 mm.
As shown in FIGS. 3 and 4, Al is added2O3The discharge power under the two dielectric barrier materials of AlN increases with the increase of the applied voltage, because when the voltage increases, the voltage acted on the air gap around the edge of the electrode also increases, the electric field intensity increases, thereby enhancing the discharge and increasing the power. However, AlN ceramics are Al because of their high thermal conductivity (about 320W/m.K)2O35-8 times of the total weight of the composition; coefficient of thermal expansion of 4.5X 10-6K, only Al2O30.56 times of; dielectric loss of 0.001 and Al alone2O30.5 times of; the thermal shock resistance is good; the breaking strength is higher than that of Al2O3(ii) a And the discharge power of the two is similar under the same voltage. Therefore, when the material of the blocking dielectric plate is AlN, the plasma generation efficiency can be remarkably lowered, the mechanical strength of the structure can be increased, the heat generation of discharge is reduced, the heat dissipation performance of the AlN is better, and the thermal expansion degree is small, so that the AlN is selected as the material of the blocking dielectric plate.
As shown in fig. 4, the discharge power is maximum when the diagonal product is 1mm × 2mm, and therefore, 0.3mm in the width of the grid line and 1mm × 2mm in the diagonal are selected as the diamond-shaped grid size. In addition, aiming at the thickness of the blocking dielectric plate, experiments are carried out on the blocking dielectric plate structure with four thicknesses of 0.365mm, 0.5mm, 0.635mm and 1mm, the fact that the blocking dielectric plate can achieve large discharge power under the same voltage of 0.365mm and 0.5mm is found, and the thickness of 0.5mm is selected in consideration of the fact that the blocking dielectric plate needs to have certain mechanical strength.
Furthermore, the material of the diamond-shaped mesh electrode and the material of the plate electrode are both AgCu 28.
It should be noted that, for the electrode in the low temperature plasma generation module, the material should be firstly good electric conductor and good thermal conductor, and secondly have certain ductility and machinability. Currently, the commonly used electrode material is copper; in addition, silver is used in precision instruments because of its highest electrical and thermal conductivity. However, copper is relatively active in chemical nature and can be oxidized by oxygen in the air at higher temperatures to produce black copper oxide which is not conductive; the copper-clad laminate can also react with water and carbon dioxide in humid air to generate a high-resistivity verdigris layer; if the low-temperature plasma generation module adopts copper as an electrode material and the corrosion reaction occurs, when the low-temperature plasma generation module discharges to generate low-temperature plasma, a plurality of sharp protrusions are formed on the surface of the copper due to the generated black copper oxide and the generated verdigris layer, so that the surface flatness of the electrode is seriously reduced; the unevenness of the electrode surface causes a serious distortion of the electric field in the vicinity of the electrode of the protrusion portion, thereby reducing the uniformity of discharge and the uniformity of heat generation of the low temperature plasma generating module, so that the generation efficiency of the low temperature plasma and the service life of the low temperature plasma generating module are seriously reduced. Therefore, copper is not suitable as an electrode material directly.
Although the physical and chemical properties of silver are better than those of copper, silver is a noble metal, so that the cost of silver as an electrode material is relatively high, the silver is soft, and the strength of the silver as the electrode material is insufficient, so that the silver is not suitable to be directly used as the electrode material.
To solve the problem of exposure of common electrode material during low-temperature plasma generationIn the embodiment of the application, AgCu28 electric contact material is selected to manufacture the electrode. The addition of Ag in Cu can obviously improve the corrosion resistance, chemical stability and mechanical strength of the material, so that the material has the advantages of two metals, has good electric and heat conduction characteristics, burning resistance, wear resistance, fusion welding resistance, chemical stability and high mechanical strength, and meets the application requirements. In addition, since the melting point of the electrical contact material is lower than either of silver or copper, it is also easier to process. AgCu28 has a melting point of only 1016K, is lower than pure copper, and has good wettability. Furthermore, AgCu28 also has excellent properties in terms of physicochemical properties: its resistivity is 1.93X 10-8Omega.m, the conductivity can reach 90.7 percent of that of pure copper; the tensile strength is 587MPa, which is about 2.5 times of that of common pure copper; the hardness can reach 850N/mm2(ii) a The thermal conductivity is 408 W.m-1K-1. According to the embodiment of the application, AgCu28 is selected as a manufacturing material of the diamond-shaped mesh electrode and the flat plate electrode of the low-temperature plasma generation module, so that the high efficiency and the stability of generating low-temperature plasma are greatly improved.
Further, the shape of the rhombic net electrode is the same as that of the flat plate electrode; the area of the first surface of the rhombic net electrode is equal to that of the first surface of the flat plate electrode; the contact positions of the first surface of the rhombic net-shaped electrode on the first side surface of the blocking dielectric plate and the contact positions of the first surface of the flat plate electrode on the second side surface of the blocking dielectric plate are symmetrical relative to the blocking dielectric plate.
It should be noted that, the above contact manner can make the discharge of the low-temperature plasma generation module occur earlier, the current pulse is denser, the discharge power is higher, the transferred electric charge is more, the energy of the plasma is higher, and the activity is stronger. Therefore, the shape of the rhombic net electrode is made to be the same as that of the flat plate electrode; the area of the first surface of the rhombic net electrode is equal to that of the first surface of the flat plate electrode; the contact position of the first surface of the rhombic net-shaped electrode on the first side surface of the blocking dielectric plate is corresponding to the contact position of the first surface of the flat plate electrode on the second side surface of the blocking dielectric plate, and the contact positions are symmetrical relative to the blocking dielectric plate, so that the low-temperature plasma generation module can efficiently and stably generate low-temperature plasma.
Furthermore, the contact mode of the first surface of the rhombic meshed electrode and the first side surface of the blocking dielectric plate is PCB printing, and the contact mode of the first surface of the flat electrode and the second side surface of the blocking dielectric plate is PCB printing; electrode welding points are arranged on the rhombic mesh electrodes, and electrode welding points are arranged on the flat plate electrodes; the electrode welding point is used for connecting the low-temperature plasma generation module with the voltage supply module so as to supply power to the low-temperature plasma generation module.
It should be noted that, for the conventional low-temperature plasma generation module based on surface dielectric barrier discharge, there is a significant drawback that the mesh electrode is not in tight contact with the barrier dielectric plate, and especially, the AlN barrier dielectric plate adopted in the embodiment of the present application has a relatively high hardness, hardly deforms under the action of external pressure, and is in tight contact with the AlN barrier dielectric plate. The conventional contact method is a mechanical contact method, i.e. the electrode is fastened on the blocking dielectric plate by a screw and a nut. Obviously, the conventional contact method cannot make the mesh electrode and the blocking dielectric plate completely contact with each other tightly and uniformly. When voltage is applied to the outside of the low-temperature plasma generation module, partial areas with good contact always generate discharge first, and areas with insufficient contact are weak in discharge, so that the difference between the initial discharge voltage and the completely uniform discharge voltage is about several kV. After the whole area is completely discharged, the part with better contact discharges violently, the part with poor contact discharges weakly, great unevenness is caused, local overheating of the blocking dielectric plate is easily caused, the blocking dielectric plate is easy to break after being used for a period of time, the breaking is often extended from the position in contact with a screw to the violent discharge area, and the breaking is caused to break the blocking dielectric plate.
For solving the untight problem of rhombus mesh electrode and the contact of blockking the dielectric plate that traditional contact mode caused, the embodiment of this application adopts the mode of PCB printing, laminate rhombus mesh electrode's first surface and the first surface of flat electrode respectively to the both sides surface of blockking the dielectric plate, thereby with rhombus mesh electrode, flat electrode and blockking the dielectric plate and unifying, greatly reduce the inhomogeneous degree of contact, effectively solved because blockking the dielectric plate because of the contact is inhomogeneous, thereby lead to local overheat to take place to break and influence the problem of plasma generating device work, the stability that low temperature plasma takes place the module and produce low temperature plasma has been improved. In addition, in order to facilitate the connection of the low-temperature plasma generation module with the voltage supply module, when the first surface of the rhombic mesh electrode and the first surface of the flat plate electrode are attached to the side face of the blocking dielectric plate, electrode welding points are arranged on the rhombic mesh electrode and the flat plate electrode.
It should be noted that, because the AgCu28 also has good weldability, when an external lead is welded, a welding point can be ensured to be firm and stable, and the problem of partial discharge caused by loose or loose contact of the welding point is effectively avoided.
As shown in fig. 2, in the low-temperature plasma generation module provided in the embodiment of the present application, the second surface of the diamond-shaped mesh electrode is covered with an insulating corrosion prevention layer, and the second surface of the flat plate electrode is also covered with an insulating corrosion prevention layer. Wherein, the insulating anti-corrosion layer adopts water-based epoxy resin.
It should be noted that the low-temperature plasma generation module may ablate the surface of the electrode during the discharge process, resulting in electrode defect, resulting in reduced surface flatness, thereby increasing the non-uniformity of the discharge, thus exacerbating the discharge ablation and causing vicious circle. Therefore, the electrode is protected, so that the discharge structure can discharge as uniformly as possible, the stability and the corrosion resistance of the discharge structure are enhanced, and the service life of the discharge structure is prolonged. The second surface of the rhombic net electrode is covered with the insulating anti-corrosion layer, and the second surface of the flat plate electrode is covered with the insulating anti-corrosion layer. The waterborne epoxy resin has the characteristics of good adhesion, low shrinkage, good size stability, high hardness, high temperature resistance, corrosion resistance, wear resistance, excellent mechanical property, excellent insulating property and the like, and the waterborne coating disperses the epoxy resin in water in a form of particles, so that the use of a volatile organic solvent harmful to human bodies is avoided, and the waterborne epoxy resin is safe, green and environment-friendly. The aqueous epoxy resin has a relative dielectric constant of 3 to 4, is higher than that of air, has a low dielectric loss angle (tan delta is 4 x 10-3), and does not affect the generation efficiency of low-temperature plasma. Therefore, the waterborne epoxy resin is selected as the insulating anti-corrosion layer of the low temperature plasma generation module. Wherein the thickness of the insulating anticorrosion layer can be 100 μm. It should be noted that the thickness of the insulating anticorrosion layer can be adjusted according to actual conditions, and the embodiment of the present application is not limited herein.
As shown in fig. 2, in the low-temperature plasma generation module provided in the embodiment of the present application, a heat conductive plate is further covered on the second surface of the plate electrode. It will be appreciated that the thermally conductive plate overlies the insulating corrosion protection layer overlying the second surface of the plate electrode.
It should be noted that the second surface of the plate electrode is covered with the heat conducting plate to further enhance the heat dissipation capability of the low-temperature plasma generation module, and improve the stability and the service life of the low-temperature plasma generation module. The heat conducting plate selects economic pure copper with good heat conductivity as a material, the size of the heat conducting plate is the same as that of the blocking dielectric plate, and heat generated when the low-temperature plasma generation module discharges can be conducted to the metal plate more quickly to dissipate heat. In addition, in order to ensure that the heat exchange between the heat conducting plate and the blocking medium plate is more sufficient and efficient, the heat conducting silica gel is adopted for bonding. The heat-conducting silica gel has excellent cold and heat alternation resistance, aging resistance and electrical insulation performance, and has excellent moisture resistance, shock resistance, corona resistance, electric leakage resistance and chemical medium resistance.
In order to further explain the structure of the low-temperature plasma generation module, a low-temperature plasma generation module proposed in the embodiment of the present application is explained in detail below with reference to fig. 5 and 6.
Fig. 5 is a schematic front structure diagram of a low-temperature plasma generation module according to an embodiment of the present disclosure, and fig. 6 is a schematic back structure diagram of a low-temperature plasma generation module according to an embodiment of the present disclosure. As shown in fig. 5 and 6, 1 denotes a barrier dielectric plate, 2 denotes through holes, 3 denotes diamond mesh electrodes covered with an insulating corrosion-resistant layer, 4 denotes solder points, 5 denotes a plate electrode, and 6 denotes a heat-conducting plate.
As shown in fig. 5 and fig. 6, a blocking dielectric plate in a low-temperature plasma generation module according to an embodiment of the present invention serves as both a substrate of the whole low-temperature plasma generation module and a blocking dielectric of the low-temperature plasma generation module. The through hole is used for being matched with a screw, a nut and a gasket to fix the low-temperature plasma generation module; it is understood that the through-hole penetrates the blocking dielectric plate as well as the heat conductive plate. The first surface of the rhombic mesh electrode is in contact with the first side face of the blocking dielectric plate through PCB printing, the area of the rhombic mesh electrode is smaller than that of the blocking dielectric plate, and the rhombic mesh electrode is covered with an insulating anti-corrosion layer. The welding points are respectively positioned on the edge of the rhombic mesh electrode and the edge of the flat plate electrode, and the positions of the welding points positioned on the rhombic mesh electrode and the welding points positioned on the flat plate electrode are symmetrical relative to the position of the blocking dielectric plate. The first surface of the flat plate electrode is in contact with the second side surface of the blocking dielectric plate through PCB printing, and an insulating anti-corrosion layer covers the first surface of the flat plate electrode; since the surface of the plate electrode is covered by the heat conducting plate and is not actually visible, the bonding position of the plate electrode is shown by a dotted line in fig. 6; it should be noted that the area of the flat plate electrode is the same as that of the diamond-shaped mesh electrode, and the corresponding contact position between the first surface of the diamond-shaped mesh electrode and the first side surface of the blocking dielectric plate is the same as the corresponding contact position between the first surface of the flat plate electrode and the second side surface of the blocking dielectric plate: for example, when the shapes and the first surface areas of the plate electrode and the diamond-shaped mesh electrode are the same, the center point of the plate electrode coincides with the center point of the first side surface of the blocking dielectric plate, the center point of the diamond-shaped mesh electrode coincides with the center point of the second side surface of the impedance dielectric plate, and the contact position of the plate electrode on the blocking dielectric plate is the same as the contact position of the diamond-shaped mesh electrode on the blocking dielectric plate because the center point of the first side surface and the center point of the second side surface are vertically symmetrical relative to the blocking dielectric plate. The size of the heat conducting plate is the same as that of the blocking dielectric plate, and heat generated by the low-temperature plasma generation module during discharging can be quickly conducted to the metal plate for heat dissipation, so that the discharging stability and the service life of the low-temperature plasma generation module are improved.
Fig. 7 is a schematic diagram of a power supply structure of a voltage providing module according to an embodiment of the present application. As shown in fig. 7, a power supply structure of a voltage providing module provided in an embodiment of the present application includes: power supply and boost circuit. Wherein, the power supply can adopt a 220V commercial power supply; the booster circuit includes: external connection, an AC-DC rectification module and a DC-AC inversion module.
The 220V commercial power supply is used for providing commercial 220V alternating voltage, and the output end of the 220V commercial power supply is connected with the input end of one end of the AC-DC rectifying module through an external wiring; the AC-DC rectifying module is used for rectifying commercial 220V alternating current voltage provided by a 220V commercial power supply into direct current voltage, and the output end at the other end of the AC-DC rectifying module is connected with the input end at one end of the DC-AC inverting module through an external wiring; the DC-AC inversion module is used for converting the direct-current voltage output by the AC-DC rectification module into high-frequency alternating-current voltage, and then the output end of the other end of the DC-AC inversion module is connected with the low-temperature plasma generation module through an external wiring and used for applying the high-frequency alternating-current voltage to the low-temperature plasma generation module so as to enable the low-temperature plasma generation module to discharge and generate low-temperature plasma.
In the embodiment of the present application, when the low-temperature plasma generation module shown in fig. 2 is used, the low-temperature plasma generation module is completely discharged when the applied voltage is increased to 5.5kv, and therefore, the peak value of the high-frequency ac voltage provided by the voltage providing module may be greater than 5.5 kv.
Fig. 8 is a schematic diagram of another power supply structure of a voltage providing module according to an embodiment of the present application. As shown in fig. 8, a power supply structure of a voltage providing module provided in an embodiment of the present application includes: power supply and boost circuit. Wherein, the power supply can be a direct current battery power supply; the booster circuit includes: external wiring, DC-AC inversion module.
The direct-current battery power supply is used for providing direct-current voltage, and the direct-current voltage of the direct-current battery power supply can be selected from proper types according to actual needs, and the embodiment of the application is not limited herein; the output end of the direct-current battery power supply is directly connected with the input end and the output end of one end of the DC-AC inversion module through external wiring; the DC-AC inversion module converts direct-current voltage provided by a direct-current battery power supply into high-frequency alternating-current voltage, and then the output end at the other end of the DC-AC inversion module is connected with the low-temperature plasma generation module through an external wiring, so that the high-frequency alternating-current voltage acts on the low-temperature plasma generation module, and the low-temperature plasma generation module discharges to generate low-temperature plasma.
It should be noted that, when the low-temperature plasma generating device provided in the embodiment of the present application is used, one of the two voltage supply module power supply structures shown in fig. 7 and 8 may be adopted according to the characteristics of the environment where the low-temperature plasma generating device is located, when the low-temperature plasma generating module is connected to the voltage supply module power supply structure, two wires at the output end of the voltage supply module power supply structure are respectively welded to the welding point on one side of the diamond-shaped mesh electrode in the low-temperature plasma generating module and the welding point on one side of the plate electrode, so as to ensure the connection to be firm and stable.
The device embodiment in the embodiment of the application is based on the same inventive concept, and the embodiment of the application also provides a low-temperature plasma generating method for fruit and vegetable fresh-keeping, and the low-temperature plasma generating device for fruit and vegetable fresh-keeping is utilized. The method comprises the following steps:
firstly, a voltage supply module supplies power to a low-temperature plasma generation module through an electrode welding point; then the low-temperature plasma generation module generates an electric field based on the power supply rhombic mesh electrode and the power supply flat electrode; finally, the low-temperature plasma generating device generates low-temperature plasma based on the generated electric field.
Specifically, there are charged particles of a certain density in the air due to natural factors such as cosmic radiation and radioactive substance radiation. When the voltage provided by the voltage providing module is supplied to the diamond-shaped mesh electrode and the plate electrode on the two sides of the blocking dielectric plate, an electric field is generated in the space around the low-temperature plasma generating module, and the electric field between the edges of the mesh lines in the diamond-shaped mesh electrode and the dielectric plate is strongest. Electrons located in the electric field are accelerated and more electrons are generated by inelastic collision processes with neutral gas molecules. A large number of electrons are gathered together and form an electron avalanche. When the intensity of the generated electric field is greater than the breakdown field intensity of air, the edges of the grid lines in the rhombic net electrode can generate a streamer discharge process; the streamer discharge process is that when the number of electrons in the electron avalanche is continuously increased, the air ionization process is strengthened, and the photoionization process occurs, so that the discharge enters a streamer discharge stage. The electrons newly generated in the photoionization process can cause secondary collision ionization of the electrons and neutral gas molecules to generate secondary electron collapse, and finally, the air is broken down to generate low-temperature plasma. The concrete expression is as follows: a plurality of micro discharge channels with small diameters are formed in the space between the edges of the grid lines in the rhombic net-shaped electrode and the blocking dielectric plate, and low-temperature plasma is generated by gas in the micro discharge channels through collision ionization and photo-ionization processes.
Further, since the low-temperature plasma generation module is driven by a high-frequency alternating voltage, the voltage polarity is periodically changed. When the voltage of the rhombic net electrode is lower than that of the flat plate electrode, negative ions and electrons generated in the streamer discharge process move to the blocking dielectric plate and are accumulated on the surface of the blocking dielectric plate to form an additional electric field opposite to the alternating current electric field provided by the voltage providing module, and when the accumulated charges are sufficient, the total electric field intensity is smaller than the air breakdown voltage, and the discharge process is interrupted. When the polarity of the alternating voltage provided by the voltage providing module is changed, the alternating electric field generated by the alternating voltage and the additional electric field generated by the charges accumulated on the blocking dielectric plate are in the same direction, the electric field is strengthened, the total electric field intensity is higher than the air breakdown field intensity, and the streamer discharge process is generated to form a micro discharge channel and generate low-temperature plasma. Since the polarity of the alternating voltage provided by the voltage providing module is periodically changed, the streamer discharge process is periodically started and interrupted, so that the low-temperature plasma is periodically and continuously generated.
The low-temperature plasma generating device and method for fruit and vegetable fresh keeping provided by the embodiment of the application have the following advantages:
(1) the diagonal size of a plurality of rhombus grids contained in the rhombus mesh electrode in the low temperature plasma generating device for fruit and vegetable fresh-keeping provided by the embodiment of the application is 1mm multiplied by 2mm, and the blocking dielectric plate is made of aluminum nitride AlN. By selecting AlN as a material of the blocking dielectric plate and taking 1mm multiplied by 2mm as the diagonal size of the grid of the rhombic meshed electrode, the mechanical strength of the low-temperature plasma generation module is ensured, the discharge heat of the low-temperature plasma generation module is reduced, the heat dissipation performance is improved, the thermal expansion degree is reduced, and the efficiency and the stability of the low-temperature plasma generated by the low-temperature plasma generation device are optimal, so that the low-temperature plasma generation device can better kill microorganisms attached to the surfaces of fruits and vegetables, degrade ethylene gas synthesized by the fruits and vegetables, inhibit the metabolism of the fruits and vegetables, and achieve better fresh-keeping effect of the fruits and vegetables.
(2) According to the low-temperature plasma generating device for fruit and vegetable fresh-keeping, the AgCu28 electric contact material is used as the electrode material of the diamond-shaped mesh electrode and the plate electrode, and the advantages of corrosion resistance, wear resistance, chemical stability, good conductivity, high mechanical strength, processability and weldability of AgCu28 are utilized, so that the efficiency and stability of generating low-temperature plasma by the low-temperature plasma generating device are improved. In addition, the AgCu28 is used as a welding material, so that the firmness of external wiring is ensured, and the possibility of contact looseness and partial discharge caused by vibration and long-term work is effectively avoided.
(3) The embodiment of the application provides a manufacturing technology that adopts PCB printing among the low temperature plasma generating device for fruit vegetables are fresh-keeping optimizes the contact mode of rhombus mesh electrode and blocking dielectric slab and the contact mode of flat electrode and blocking dielectric slab, with rhombus mesh electrode and flat electrode direct bonding to blocking dielectric slab surface under high temperature, the inhomogeneous degree of laminating has greatly been reduced, the problem of blocking dielectric slab because of local overheat and atress uneven emergence fracture has effectively been solved, the efficiency and the stability that low temperature plasma generating device produced low temperature plasma have been improved.
(4) According to the low-temperature plasma generating device for fruit and vegetable fresh-keeping, the water-based epoxy resin material is adopted as the insulating anti-corrosion layer to cover the rhombic net-shaped electrode and the flat plate electrode, so that the exposed electrode is effectively prevented from being ablated and oxidized in the discharging process, the corrosion resistance, the wear resistance and the stability of the low-temperature plasma generating module are enhanced, the service life of the low-temperature plasma generating device is prolonged, and the efficiency and the stability of the low-temperature plasma generated by the low-temperature plasma generating device are improved. In addition, the insulating anti-corrosion layer has stronger insulating property, can further reduce the use risk, ensures user's personal safety.
(5) The embodiment of the application provides a low temperature plasma generating device for fruit vegetables are fresh-keeping adopts pure copper material as the heat-conducting plate, can further strengthen low temperature plasma generating device's heat-sinking capability, increases the homogeneity of discharging, extension low temperature plasma generating device life.
The embodiments in the present application are described in a progressive manner, and the same and similar parts among the embodiments can be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the apparatus embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (7)
1. A low-temperature plasma generating device for fruit and vegetable fresh-keeping is characterized by comprising: a low-temperature plasma generation module;
the low-temperature plasma generating module comprises a blocking dielectric plate, a rhombic mesh electrode and a flat electrode; the first surface of the rhombic net electrode is in contact with the first side surface of the blocking dielectric plate, and the first surface of the flat plate electrode is in contact with the second side surface of the blocking dielectric plate;
the rhombic mesh electrode comprises a plurality of rhombic meshes, wherein the first diagonal length of the rhombic meshes is 1mm, the second diagonal length of the rhombic meshes is 2mm, and the mesh line width of the rhombic mesh electrode is 0.3 mm; the thickness of the blocking dielectric plate is 0.5 mm;
the blocking dielectric plate is made of aluminum nitride (AlN); the material of the rhombic mesh electrode is AgCu 28; the flat plate electrode is made of AgCu 28;
an insulating anti-corrosion layer covers the second surface of the rhombic net electrode; and the second surface of the flat plate electrode is covered with an insulating anti-corrosion layer.
2. The low-temperature plasma generating device for fruit and vegetable fresh-keeping according to claim 1, wherein the diamond-shaped mesh electrode has the same shape as the flat plate electrode;
the area of the first surface of the rhombic net electrode is equal to that of the first surface of the flat plate electrode;
the contact positions of the first surface of the rhombic net-shaped electrode on the first side surface of the blocking dielectric plate and the contact positions of the first surface of the plate electrode on the second side surface of the blocking dielectric plate are symmetrical relative to the blocking dielectric plate.
3. The low-temperature plasma generating device for fruit and vegetable fresh-keeping according to claim 2, wherein the first surface of the rhombic mesh electrode is in contact with the first side surface of the blocking dielectric plate in a PCB printing mode; and the number of the first and second groups,
the contact mode of the first surface of the flat plate electrode and the second side surface of the blocking dielectric plate is PCB printing;
electrode welding points are arranged on the rhombic mesh electrodes, and electrode welding points are arranged on the flat plate electrodes; wherein the electrode welding point is used for connecting the low-temperature plasma generating module with the voltage providing module.
4. The low-temperature plasma generating device for fruit and vegetable fresh-keeping according to claim 1, wherein the second surface of the flat electrode is covered with a heat conducting plate.
5. The low-temperature plasma generating device for fruit and vegetable fresh-keeping according to claim 1, characterized by further comprising a voltage providing module; the voltage supply module comprises a power supply and a booster circuit;
the power supply is connected with the booster circuit; the booster circuit is used for converting the voltage provided by the power supply into high-frequency alternating-current voltage;
the power supply comprises at least one of the following items: commercial AC power supply and DC battery power supply.
6. The low-temperature plasma generating device for fruit and vegetable fresh-keeping according to claim 5, wherein the peak value of the high-frequency alternating voltage is more than 5.5 kv.
7. A low-temperature plasma generating method for fruit and vegetable fresh keeping, which is characterized in that the low-temperature plasma generating device for fruit and vegetable fresh keeping of any one of claims 1-6 is applied, and the method comprises the following steps:
the voltage supply module supplies power to the low-temperature plasma generation module through the electrode welding point;
the low-temperature plasma generation module generates an electric field based on the rhombic mesh electrode and the flat plate electrode;
based on the electric field, the low-temperature plasma generating device generates low-temperature plasma.
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