CN105555000A - Normal temperature glow discharge low-temperature plasma material processing device under large discharge interval - Google Patents
Normal temperature glow discharge low-temperature plasma material processing device under large discharge interval Download PDFInfo
- Publication number
- CN105555000A CN105555000A CN201510619687.1A CN201510619687A CN105555000A CN 105555000 A CN105555000 A CN 105555000A CN 201510619687 A CN201510619687 A CN 201510619687A CN 105555000 A CN105555000 A CN 105555000A
- Authority
- CN
- China
- Prior art keywords
- vacuum cavity
- glow discharge
- normal temperature
- device under
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/4697—Generating plasma using glow discharges
Abstract
The invention discloses a normal temperature glow discharge low-temperature plasma material processing device under a large discharge interval. The normal temperature glow discharge low-temperature plasma material processing device under the large discharge interval comprises a vacuum cavity, an upper electrode and a lower electrode which are arranged in the internal part of the vacuum cavity, an additional atmosphere interface which is arranged at the upper end of the vacuum cavity, an air extracting and air releasing interface which is arranged at the lower end of the vacuum cavity, a vacuum cavity door which is arranged at one side of the vacuum cavity, and a driving power supply which penetrates through the vacuum cavity to be connected with the upper and lower electrodes respectively. The driving power supply is a modulation pulse driving power supply. Meanwhile, a rare earth element oxide coating layer is arranged on the lower surface of the upper electrode and the upper surface of the lower electrode which are oppositely arranged. The invention provides the material processing device generating homogeneous glow discharge and glow discharge low-temperature plasmas close to normal temperature under the condition of 500-5000pa air pressure by aiming at the problem that existing low-temperature plasma material processing device generates large amount of heat energy in discharging.
Description
Technical field
The invention discloses normal temperature glow discharge low-temp plasma material handling device under a kind of large discharging distance, relate to low temperature plasma material processed technical field.
Background technology
Containing a large amount of, miscellaneous active particle in the low temperature plasma that gas discharge produces, these active particles and material, the reactions such as its surface etches, is oxidized, reduces, is cross-linked, is polymerized, grafting can be made, cause the change of material surface chemical composition and physicochemical properties.This surface treatment method has the features such as technique is simple, easy and simple to handle, low, the environmentally safe of consuming energy.Particularly in medical material industry, this method is for etching activation, graft modification, polymerization or deposition overlay film etc., top layer is cleaned, activates, roughening, or by introducing active particle in new chemical group, low-temperature plasma at material surface and material surface reactive polymeric deposits the object that processes such as forming film reaches surface modification.
When surface treatment is carried out to macromolecular material, usually utilize low pressure glow discharge mode to obtain the low temperature plasma needed for material surface process, or under atmospheric pressure carry out corona discharge, arc discharge, dielectric barrier discharge produce low temperature plasma material surface is processed.But all these produce the method for low temperature plasma at present, in the process of electric discharge, all can produce heat energy, namely apply how many energy and substantially just produce how many Joule heats, the processing time is longer, and discharge temp is namely higher.This is to the material of the many not heatproofs of process, as artificial lens, artificial blood vessel, contact lenses, nonwoven fabrics, macromolecule membrane, the materials such as biochip, if produce with these conventional at present discharge modes low temperature plasma will damage these types material because of the heat produced in discharge process and higher temperature, or make material because of thermal deformation, or scantling is shunk, or make material breakdown.
In the dielectric barrier discharge of routine, can only produce filament-like discharges, particularly large discharging distance (more than tens millimeters) is difficult to produce uniform glow discharge, can only produce several ebb-flow discharge under smaller discharge power drives.Meanwhile, in conventional treatment means, can produce a large amount of heat energy while electric discharge, safety and stability is all a large hidden danger.
In Chinese patent application " glow discharge low-temp plasma device " in (application number 200620074948.2) disclosed technical scheme, when not providing solution discharging distance larger, still produce the problem of uniform glow discharge, also well do not solve the problem of electric discharge heating.
Summary of the invention
Technical problem to be solved by this invention is: for the defect of prior art, normal temperature glow discharge low-temp plasma material handling device under a kind of large discharging distance is provided, the electric discharge existed for existing low temperature plasma material handling device can produce a large amount of heat energy problems simultaneously, proposes the material handling device that one can produce uniform glow discharge and the glow discharge low-temp plasma close to normal temperature under 500 ~ 5000pa air pressure conditions.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
Normal temperature glow discharge low-temp plasma material handling device under a kind of large discharging distance, comprise vacuum cavity, be arranged at top electrode and the bottom electrode of vacuum cavity inside, be arranged at the additional atmosphere interface of vacuum cavity upper end, be arranged at bleeding and disappointing interface of vacuum cavity lower end, be arranged at the vacuum chamber door of vacuum cavity side, also comprise through vacuum cavity respectively with upper, the driving power that bottom electrode is connected, it is characterized in that: described driving power is modulating pulse driving power, simultaneously, on the top electrode lower surface be oppositely arranged and bottom electrode upper surface, one deck rare earth oxide coating is set respectively, the first-harmonic of described driving power is sinusoidal wave, and frequency is at 2000 ~ 20000Hz, the modulation waveform of described driving power is square wave, and frequency is at 20 ~ 200Hz, and duty ratio is 1% ~ 99%.
As present invention further optimization scheme, the material of described rare earth oxide coating is lanthana, rubidium oxide or praseodymium oxide.
As present invention further optimization scheme, use described modulating pulse driving power, adopt differential feed mode described top electrode and bottom electrode to be presented respectively to the modulating pulse power supply of upper amplitude equal and opposite in direction, phase 180 degree.
As present invention further optimization scheme, described vacuum cavity is dielectric chamber.
As present invention further optimization scheme, described vacuum cavity is metallic cavity, has insulating barrier the inwall of metal vacuum cavity is coated.
As present invention further optimization scheme, the material of described metallic cavity insulating barrier is pottery, glass, polyethylene, polyvinyl chloride, polypropylene, polytetrafluoroethylene or nylon.
As present invention further optimization scheme, described upper and lower electrode is connected with driving power by upper and lower contact conductor, and described upper and lower contact conductor penetrates vacuum cavity through being arranged at the upper and lower electrode extraction insulator on vacuum cavity side.
As present invention further optimization scheme, the outside of described top electrode and bottom electrode is enclosed with electrode dielectric layer, and the skin of described upper and lower contact conductor is also coated with insulation material layer.
As present invention further optimization scheme, the material of described electrode dielectric layer is pottery, toughened glass, quartz glass or devitrified glass; The material of described insulation material layer is silicon rubber or fluorubber.
As present invention further optimization scheme, between described vacuum cavity and vacuum chamber door, be provided with sealing ring.
The present invention adopts above technical scheme compared with prior art, has following technique effect:
1) any gaseous material can be made under several one hundred air pressure conditions to several kPas to produce uniform and close to the low temperature plasma (only higher 1 ~ 3 degree than ambient temperature) of normal temperature.The macromolecular material of various not heatproof, the surface low-temperature plasma treatment of fiber material can be applied to.Particularly to the medical material of many not heatproofs, as artificial lens, artificial blood vessel, contact lenses etc. carry out Low Temperature Plasma Treating.
2) because the region of discharge of low temperature plasma is without any metal, carrying out in Low Temperature Plasma Treating process, processed material can not be subject to any metallic pollution.
3) low to the vacuum level requirements of equipment, use the vacuum requirement reaching hundreds of to several kPas that common oil-sealed rotary pump can be simple and quick.
4) gas concentration due to plasma slab is high, fast for technique medium velocities such as material surface process, grafting and polymerizations, is more conducive to the chemical synthesis of material surface in the reaction of gaseous material, decomposes and grafting.
Accompanying drawing explanation
Fig. 1 is the structural map of first embodiment of the invention, when for dielectric chamber;
Fig. 2 is the structural map of second embodiment of the invention, when for metallic cavity inner surface insulation;
In figure: 1 vacuum cavity, 2 insulated cavity body walls, 3 wire chamber body walls, 4 wire chamber body wall insulating barriers, 5 sealing rings, 6 vacuum chamber doors, 7 bleed and disappointing interface, 8 additional atmosphere interfaces, 9 top electrodes, 10 top electrode insulating barriers, 11 top electrode lead-in wires, 12 top electrode lead wire insulation layers, 13 top electrodes draw insulator, 14 top electrode extraction electrodes, 15 bottom electrodes, 16 bottom electrode insulating barriers, 17 bottom electrode lead-in wires, 18 bottom electrode lead wire insulation layers, 19 bottom electrodes draw insulator, 20 bottom electrode extraction electrodes, 21 differential type modulating pulse driving powers, 22 discharge of plasma in low temperature regions, 23 rare earth oxide coating, 24 Systematical control touch-screens.
Embodiment
Be described below in detail embodiments of the present invention, the example of described execution mode is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the execution mode be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
The technical solution used in the present invention is:
1) glow discharge low-temp plasma device, comprises cavity, top electrode, bottom electrode, and the upper and lower metal electrode in seal chamber is all by such as glass, and quartz glass, the insulation material layers such as devitrified glass are coated.
2) one deck rare earth oxide is all coated with at the glass surface of the forward surface of two electrodes.In the dielectric barrier discharge of routine, can only produce filament-like discharges, particularly large discharging distance (more than tens millimeters) is difficult to produce uniform glow discharge, can only produce several ebb-flow discharge under smaller discharge power drives.If be coated with one deck rare earth oxide (as lanthana at the glass surface of the forward surface of two electrodes, rubidium oxide, praseodymium oxide) or by rare earth oxide direct sintering inside glass, then can produce uniform glow discharge at large discharging distance (more than tens millimeters), even if smaller discharge power drives also can produce uniform glow discharge.The atomic structure of rare earth element can represent with 4fx5d16s2, x is from 0 → 14, and after rare earth element becomes ion from metal, the outside of 4f track still surrounds the electron cloud of 5s25p6, lose 6s2 electronics and 5d1 or 4f loses an electronics, form the electronic structure of 4fx5s25p6.In rare earth metal, 6s electronics and 5d electronics form conduction band, 4f electronics is localization in atom then, the localization of this 4f electronics and not exclusively fill and all 4f electronics among being reflected in their all physical property is positioned at intratomic layer track, 5s25p6 electron cloud has shielding action to it, the space that 4f track stretches is very little, so very little by the impact of crystalline field, ligand field etc.; In contrast, its spin (MS) is all very large with the interaction of track (ML), make f-f electron orbit L and the mutual coupling of spin S-phase, E4f splits into the energy level subgrade that many energy levels have minute differences, under ac high-voltage electric field action, the micro-electronics of the periphery of rare earth element just forms seed electrons than being easier to overflow and causing glow discharge in sparking electrode.
3) driving power adopts modulating pulse power supply, and the first-harmonic of power supply is sinusoidal wave, and frequency is at 2000 ~ 20000Hz, and modulation waveform is square wave, and frequency is at 20 ~ 200Hz, and duty ratio is 1% ~ 99%.After the discharge of plasma in low temperature of routine, gas is ionized as electronics and ion, electronics and ion are buried in oblivion in region of discharge generation irregular movement and collision rift, annihilation process is luminous and generate heat, and namely applies how many energy and substantially just produces how many Joule heats, under vacuum conditions, because sparking electrode is be in adiabatci condition substantially, processing time is longer, and discharge power is larger, and discharge temp is namely higher.After adopting modulating pulse power supply, drive waveforms adopts discontinuous excitation, electronics and ion are produced in the space of region of discharge and is separated and layering, reduce electronics and interionic collision probability, namely decrease heating.Because electronics does not almost have quality, quality concentrates on ion substantially, and when region of discharge applies discontinuous high voltage electric field, its plasma discharge is also discontinuous, when applying high voltage electric field electric discharge, the quality of electronics is very little, and electronics acceleration of motion is in the electric field than very fast, and the quality of ion is much larger than electronics, the speed of its motion is slow, namely electronics and ion are layered, and the probability of collision also reduces greatly, and the heat thus produced after electric discharge also significantly reduces.
4) feeding classification of two electrodes adopts differential feed mode, on two electrodes, namely presents amplitude equal and opposite in direction (AC500V ~ AC3000V) respectively, the modulating pulse power supply of phase 180 degree.Because sparking electrode is placed in cavity, if adopt conventional unipolarity power drives, then the output voltage of power supply is higher, spacing between electrode and metallic cavity needs larger, otherwise high-field electrode and metallic cavity are easy to produce invalid electric discharge, both off-energy, is also easy to burn out insulation.Adopt differential feed mode, then the voltage between electrode and metallic cavity reduces half, and the insulation clearance between electrode and metallic cavity can reduce half, and the effective rate of utilization of cavity can double.
5) if the closer and volume of the distance of electrode and seal chamber is little again, then the material of insulation can be selected to do cavity.
6) if cavity is metal, then at the coated insulation material layer of metallic cavity inwall.
7) back side of top electrode and bottom electrode is coated with insulation material layer, and the lead-out wire of top electrode and bottom electrode is coated with insulation material layer.Top electrode and bottom electrode also can all be wrapped in insulation material layer.
8) other the various gaseous material comprising air can be applied in cavity, the low temperature plasma of corresponding gaseous state thing can be produced.
Embodiment one
Fig. 1 is an embodiment of patent of the present invention, discharge to prevent electrode and chamber walls, the cavity wall of the present embodiment vacuum cavity 1 adopts insulated cavity body wall 2, and the insulating material of insulated cavity body wall 2 can be the materials such as pottery, glass, polyethylene, polyvinyl chloride, polypropylene, polytetrafluoroethylene, nylon.Be vacuum chamber door 6 on the right side of vacuum cavity 1, material can be toughened glass, and vacuum chamber door 6 is provided with sealing ring 5 between contacting with cavity.Cavity of resorption body wall is provided with bleeds and disappointing interface 7, and epicoele body wall is provided with additional atmosphere interface 8.Top electrode 9 is relative with bottom electrode 15 to be located in vacuum cavity 1, top electrode 9 to be held with (+) of differential type modulating pulse driving power 21 by top electrode lead-in wire 11 and is connected, and bottom electrode 15 is gone between by bottom electrode and 17 to be connected with differential type modulating pulse driving power (-) 21.The appearance of top electrode 9 is coated with insulating barrier 10, insulating material can be pottery, toughened glass, quartz glass, devitrified glass, top electrode lead-in wire 11 is coated with top electrode lead wire insulation layer 12, material is silicon rubber, fluorubber, is connected with differential type modulating pulse driving power (+) 21 by top electrode extraction electrode 14, and top electrode extraction electrode 14 is coated on top electrode and draws in insulator 13.Bottom electrode 15 is coated with bottom electrode insulating barrier 16, insulating material can be pottery, toughened glass, quartz glass, devitrified glass, bottom electrode lead-in wire 17 is coated with bottom electrode lead wire insulation layer 18, by bottom electrode extraction electrode 20 and differential type modulating pulse driving power 21(-) be connected, bottom electrode extraction electrode 20 is coated on bottom electrode and draws in insulator 19.The forward surface surface of the electrode dielectric layer 10 and 16 that upper/lower electrode 9 and 15 appearance is coated is coated with one deck rare earth oxide coating.
During practical operation, first close additional atmosphere interface 8 and vacuum chamber door 6, with vacuum pump by the gas in vacuum cavity 1 from bleed and disappointing interface 7 extract out, make the air pressure in vacuum cavity 1 be about 500 ~ 5000pa.The differential type modulating pulse driving power of certain power is applied again, then 22 low temperature plasmas that just can produce normal temperature glow discharge in the clearance space between top electrode 9, bottom electrode 15 on top electrode 9, bottom electrode 15 extraction electrode 14 and 20.
If needed, various gas can be applied by additional atmosphere interface 8, namely can produce the low temperature plasma of corresponding atmosphere.
The outer surface of top electrode 9, bottom electrode 15 must use certain thickness dielectric, as coated in materials such as pottery, glass, toughened glass, quartz glasss, and in other region of interest, as the back side, electrode outlet line etc. of electrode, apply good insulation processing when there is unwanted electric discharge, make glow discharge only be confined to the interior generation of forward surface of upper and lower two electrodes.
Top electrode 9, bottom electrode 15 can be the metal materials such as metal coating, wire netting, metal foil or metallic plate, also can be the nonmetallic electric conducting materials such as graphite.
Embodiment two
Fig. 2 is second embodiment of the present invention, the cavity wall of the present embodiment vacuum cavity 1 is wire chamber body wall 3, discharge to prevent electrode and wire chamber body wall 3, be coated with insulating barrier 4 at the inner surface of wire chamber body wall 3, wire chamber body wall insulating barrier 4 have employed the materials such as such as glass, polyethylene, polypropylene, nylon, polytetrafluoroethylene, silicon rubber.Other structure of the present embodiment is identical with embodiment one, and when specifically implementing, its method of operation is also identical with embodiment one.The present embodiment is applicable on the larger equipment of the volume ratio of vacuum cavity 1.
By reference to the accompanying drawings embodiments of the present invention are explained in detail above, but the present invention is not limited to above-mentioned execution mode, in the ken that those of ordinary skill in the art possess, can also makes a variety of changes under the prerequisite not departing from present inventive concept.The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be do not depart from technical solution of the present invention content, according to technical spirit of the present invention, within the spirit and principles in the present invention, to any simple amendment that above embodiment is done, equivalent replacement and improvement etc., within the protection range all still belonging to technical solution of the present invention.
Claims (10)
1. normal temperature glow discharge low-temp plasma material handling device under large discharging distance, comprise vacuum cavity, be arranged at top electrode and the bottom electrode of vacuum cavity inside, be arranged at the additional atmosphere interface of vacuum cavity upper end, be arranged at bleeding and disappointing interface of vacuum cavity lower end, be arranged at the vacuum chamber door of vacuum cavity side, also comprise through vacuum cavity respectively with upper, the driving power that bottom electrode is connected, it is characterized in that: described driving power is modulating pulse driving power, simultaneously, on the top electrode lower surface be oppositely arranged and bottom electrode upper surface, one deck rare earth oxide coating is set respectively,
The first-harmonic of described driving power is sinusoidal wave, and frequency is at 2000 ~ 20000Hz;
The modulation waveform of described driving power is square wave, and frequency is at 20 ~ 200Hz, and duty ratio is 1% ~ 99%.
2. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 1, is characterized in that: the material of described rare earth oxide coating is lanthana, rubidium oxide or praseodymium oxide.
3. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 1 or 2, it is characterized in that: use described modulating pulse driving power, adopt differential feed mode described top electrode and bottom electrode to be presented respectively to the modulating pulse power supply of upper amplitude equal and opposite in direction, phase 180 degree.
4. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 3, is characterized in that: described vacuum cavity is dielectric chamber.
5. normal temperature glow discharge low-temp plasma material handling device under discharging distance as claimed in claim 3 large, is characterized in that: described vacuum cavity is metallic cavity, has insulating barrier the inwall of metal vacuum cavity is coated.
6. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 5, is characterized in that: the material of described metallic cavity insulating barrier is pottery, glass, polyethylene, polyvinyl chloride, polypropylene, polytetrafluoroethylene or nylon.
7. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 1, it is characterized in that: described upper and lower electrode is connected with driving power by upper and lower contact conductor, described upper and lower contact conductor penetrates vacuum cavity through being arranged at the upper and lower electrode extraction insulator on vacuum cavity side.
8. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 6, it is characterized in that: the outside of described top electrode and bottom electrode is enclosed with electrode dielectric layer, the skin of described upper and lower contact conductor is also coated with insulation material layer.
9. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 8, is characterized in that: the material of described electrode dielectric layer is pottery, toughened glass, quartz glass or devitrified glass;
The material of described insulation material layer is silicon rubber or fluorubber.
10. normal temperature glow discharge low-temp plasma material handling device under large discharging distance as claimed in claim 1, is characterized in that: be provided with sealing ring between described vacuum cavity and vacuum chamber door.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510619687.1A CN105555000A (en) | 2014-10-28 | 2015-09-25 | Normal temperature glow discharge low-temperature plasma material processing device under large discharge interval |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2014105851819 | 2014-10-28 | ||
| CN201410585181 | 2014-10-28 | ||
| CN201510619687.1A CN105555000A (en) | 2014-10-28 | 2015-09-25 | Normal temperature glow discharge low-temperature plasma material processing device under large discharge interval |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105555000A true CN105555000A (en) | 2016-05-04 |
Family
ID=55833861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510619687.1A Pending CN105555000A (en) | 2014-10-28 | 2015-09-25 | Normal temperature glow discharge low-temperature plasma material processing device under large discharge interval |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105555000A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531596A (en) * | 2016-11-25 | 2017-03-22 | 山西大学 | Apparatus and method for generating glow discharge striations |
| CN107426908A (en) * | 2017-07-13 | 2017-12-01 | 大连理工大学 | A kind of low pressure large area, high-density plasma generation device and production method |
| CN108856170A (en) * | 2018-05-12 | 2018-11-23 | 合肥杰硕真空科技有限公司 | A kind of intermediate frequency plasma body cleaning device |
| CN108971140A (en) * | 2018-05-12 | 2018-12-11 | 合肥杰硕真空科技有限公司 | A kind of radio frequency plasma cleaning device |
| CN110425877A (en) * | 2019-08-07 | 2019-11-08 | 清华大学深圳研究生院 | Ceramic post sintering device and ceramic post sintering method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126939A (en) * | 1994-12-27 | 1996-07-17 | 岸冈俊 | Low-temperature plasma generator |
| CN2930194Y (en) * | 2006-07-18 | 2007-08-01 | 万京林 | Glow discharge low temperature plasma device |
| CN101138806A (en) * | 2007-10-19 | 2008-03-12 | 江苏科技大学 | Superaudio impulse plasma arc cutting method and device |
| WO2008108331A1 (en) * | 2007-03-05 | 2008-09-12 | Ohnit Co., Ltd. | Low temperature plasma generator |
| JP2008300873A (en) * | 2008-08-26 | 2008-12-11 | Masayoshi Murata | Plasma surface treatment method and device therefor |
| EP2237310A1 (en) * | 2007-10-17 | 2010-10-06 | Masayoshi Murata | High frequency plasma cvd apparatus, high frequency plasma cvd method and semiconductor thin film manufacturing method |
| CN102281698A (en) * | 2011-07-19 | 2011-12-14 | 大连理工大学 | Method for improving plasma characteristics by using impulse modulation |
| US20130029492A1 (en) * | 2011-07-27 | 2013-01-31 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
| CN103275342A (en) * | 2013-04-10 | 2013-09-04 | 东华大学 | Method for pulsed bias-assistant plasma high-speed treatment on organic film |
| CN204145866U (en) * | 2014-10-28 | 2015-02-04 | 南京苏曼等离子科技有限公司 | Low temperature plasma material handling device under large discharging distance |
-
2015
- 2015-09-25 CN CN201510619687.1A patent/CN105555000A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126939A (en) * | 1994-12-27 | 1996-07-17 | 岸冈俊 | Low-temperature plasma generator |
| CN2930194Y (en) * | 2006-07-18 | 2007-08-01 | 万京林 | Glow discharge low temperature plasma device |
| WO2008108331A1 (en) * | 2007-03-05 | 2008-09-12 | Ohnit Co., Ltd. | Low temperature plasma generator |
| EP2237310A1 (en) * | 2007-10-17 | 2010-10-06 | Masayoshi Murata | High frequency plasma cvd apparatus, high frequency plasma cvd method and semiconductor thin film manufacturing method |
| CN101138806A (en) * | 2007-10-19 | 2008-03-12 | 江苏科技大学 | Superaudio impulse plasma arc cutting method and device |
| JP2008300873A (en) * | 2008-08-26 | 2008-12-11 | Masayoshi Murata | Plasma surface treatment method and device therefor |
| CN102281698A (en) * | 2011-07-19 | 2011-12-14 | 大连理工大学 | Method for improving plasma characteristics by using impulse modulation |
| US20130029492A1 (en) * | 2011-07-27 | 2013-01-31 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
| CN103275342A (en) * | 2013-04-10 | 2013-09-04 | 东华大学 | Method for pulsed bias-assistant plasma high-speed treatment on organic film |
| CN204145866U (en) * | 2014-10-28 | 2015-02-04 | 南京苏曼等离子科技有限公司 | Low temperature plasma material handling device under large discharging distance |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106531596A (en) * | 2016-11-25 | 2017-03-22 | 山西大学 | Apparatus and method for generating glow discharge striations |
| CN107426908A (en) * | 2017-07-13 | 2017-12-01 | 大连理工大学 | A kind of low pressure large area, high-density plasma generation device and production method |
| CN108856170A (en) * | 2018-05-12 | 2018-11-23 | 合肥杰硕真空科技有限公司 | A kind of intermediate frequency plasma body cleaning device |
| CN108971140A (en) * | 2018-05-12 | 2018-12-11 | 合肥杰硕真空科技有限公司 | A kind of radio frequency plasma cleaning device |
| CN110425877A (en) * | 2019-08-07 | 2019-11-08 | 清华大学深圳研究生院 | Ceramic post sintering device and ceramic post sintering method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204145866U (en) | Low temperature plasma material handling device under large discharging distance | |
| CN105555000A (en) | Normal temperature glow discharge low-temperature plasma material processing device under large discharge interval | |
| CN104768316A (en) | Large-discharge-interval normal temperature glow discharge low-temperature plasma material processing device | |
| JP5453089B2 (en) | Cold plasma treatment of plastic bottles and apparatus for performing the same | |
| US2489436A (en) | Method and apparatus for producing neutrons | |
| EP2208404B1 (en) | Transient plasma ball generation system at long distance | |
| US6204605B1 (en) | Electrodeless discharge at atmospheric pressure | |
| US6403029B1 (en) | System and method of applying energetic ions for sterilization | |
| US20070235427A1 (en) | Apparatus and method for treating a workpiece with ionizing gas plasma | |
| CN104918402A (en) | Device for common voltage high voltage radio cooperation radio frequency glow jet discharge and discharge method | |
| WO2006118870A2 (en) | Pulsed dielectric barrier discharge | |
| CN108611623B (en) | Spraying coating device and method for inhibiting secondary electron yield of solid dielectric material | |
| EP3788181B1 (en) | Method of low-temperature plasma generation, method of an electrically conductive or ferromagnetic tube coating using pulsed plasma and corresponding devices | |
| CN2930194Y (en) | Glow discharge low temperature plasma device | |
| CN105199133A (en) | Large culture dish normal-pressure low-temperature plasma processing device and operating method thereof | |
| CN107466150A (en) | A kind of three-dimensional apparatus for low-temperature plasma treatment | |
| CN103108980A (en) | Method for treating a surface of a device for dispensing a fluid product | |
| US10418227B2 (en) | Plasma equipment for treating powder | |
| JP3704792B2 (en) | Method for producing photocatalytic material | |
| Boulos et al. | Basic concepts of plasma generation | |
| JP2016509330A (en) | Electrode pairs for DBD plasma process | |
| JPH09285528A (en) | Device for sterilizing inner surface of pressure hypersensitive vessel | |
| KR20060102781A (en) | Cleaning apparatus for dielectrics by atmospheric pressure plasma | |
| CN112616235B (en) | Application of two-dimensional titanium carbon in generating atmospheric pressure uniform dielectric barrier discharge | |
| Gao et al. | Comparing Study on Formation of Large Discharge Currents in Atmospheric Pulse-Modulated Radio Frequency Discharges |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160504 |
|
| RJ01 | Rejection of invention patent application after publication |