CN107425049A - 一种类岛状电子传输的薄膜晶体管及制备方法 - Google Patents
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- 238000010276 construction Methods 0.000 claims abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 10
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本发明属于薄膜晶体管技术领域，公开了一种类岛状电子传输的薄膜晶体管及制备方法。所述薄膜晶体管由衬底上依次设置的栅极、栅极绝缘层、有源层和源漏电极构成；所述有源层为非连续的类岛状TCO薄膜和低载流子浓度材料薄膜组成的叠层结构，其中低载流子浓度材料薄膜连接相邻两个类岛状TCO薄膜，形成一个导电通道。本发明采用非连续的类岛状TCO薄膜能够有效降低其导电性，而低载流子的薄膜连接两个相邻TCO薄膜，使电子能够在相邻晶粒间有效传输并且维持一个理想的关态电流。
Description
技术领域
本发明属于薄膜晶体管技术领域，具体涉及一种类岛状电子传输的薄膜晶体管及制备方法。
背景技术
薄膜晶体管(Thin Film Transistor，简称TFT)，是一种用途广泛的半导体器件，其最重要的用途是在显示器中用于驱动液晶排列变化、以及驱动OLED像素发光。
薄膜晶体管通过栅极电压来控制有源层半导体的载流子，从而实现器件的开或关态。当器件处于开态时，高的载流子浓度，有利于填充陷阱态，从而实现高的迁移率。然而，当器件处于关态时，关态电流主要来自：有源层电流和绝缘层漏电流。其中，有源层电流与载流子的浓度成正比。作为有源层材料，过高的载流子浓度会导致关态电流太高，TFT甚至处于一个“always-on”态，无法正常工作。
透明导电氧化物(简称，TCO)薄膜具有非常好的透明度和热稳定性，是非常重要电子器件材料。然而，TCO具有非常高的载流子浓度，难以直接用于有源层。为了解决这个问题，目前主流的方法是，通过重掺杂抑制载流子的元素，来有效的控制载流子浓度。例如，掺杂超过5wt.％Al2O3的ZnO。这种方式会增加填隙Al离子，极大的增强杂质离子散射，降低迁移率。
发明内容
针对以上现有技术存在的缺点和不足之处，本发明的首要目的在于提供一种类岛状电子传输的薄膜晶体管。
本发明的另一目的在于提供上述类岛状电子传输的薄膜晶体管的制备方法。
本发明目的通过以下技术方案实现：
一种类岛状电子传输的薄膜晶体管，由衬底上依次设置的栅极、栅极绝缘层、有源层和源漏电极构成；所述有源层为非连续的类岛状TCO薄膜和低载流子浓度材料薄膜组成的叠层结构，其中低载流子浓度材料薄膜连接相邻两个类岛状TCO薄膜，形成一个导电通道。
上述有源层中，类岛状TCO薄膜主要起到载流子施主的作用，而低载流子浓度材料薄膜主要起到连接相邻两个岛状，形成一个导电通道。所述的类岛状TCO薄膜的材料为具有高导电性能并且在生长初期以岛状生长为主的TCO材料，而所述低载流子浓度材料为具有低载流子的半导体或者绝缘体。
优选地，所述类岛状TCO薄膜的材料为氧化锌(ZnO)或掺杂氧化锌、氧化铟(In2O3)或掺杂氧化铟；所述掺杂氧化锌优选掺铝氧化锌(AZO)，所述掺杂氧化铟优选掺锡氧化铟(ITO)。
优选地，所述低载流子浓度材料为Al2O3、Ga2O3或HfO2。
上述类岛状电子传输的薄膜晶体管的制备方法，包括如下制备步骤：
(1)室温下在衬底上用直流磁控溅射沉积栅极；
(2)通过阳极氧化将栅极表面氧化，得到栅极绝缘层；
(3)室温下通过脉冲激光沉积(Pulsed Laser Deposition，简称PLD)的方法在栅极绝缘层上表面依次溅射非连续的类岛状TCO薄膜和低载流子浓度材料薄膜，得到有源层；
例如，可采用脉冲激光生长类岛状AZO薄膜和低载流子浓度Al2O3薄膜形成AZO/Al2O3有源层：先在栅极绝缘层上表面生长一层岛状的AZO薄膜。值得注意的是，AZO薄膜要控制好厚度，避免形成连续薄膜。在激光能量为305mJ，频率为5Hz，氧压为10mtorr的工艺参数中，AZO的脉冲数不超过600，获得的厚度小于6nm，能够获得很好的类岛状形貌AZO；对于不同工艺参数，脉冲数应当适当调整以获得一个类岛状薄膜。然后沉积连续的低载流子浓度Al2O3薄膜，其工艺参数可参考AZO，厚度应该尽可能薄，以避免影响接触特性。
(4)室温下用蒸镀方式沉积源漏电极。源漏电极应覆盖在有源层边界，避免低载流子浓度材料薄膜影响接触特性。
上述制备方法中，所述有源层通过脉冲激光沉积方式在室温制备而成，且后期不需要退火处理。
优选地，步骤(3)中所述脉冲激光沉积的条件为：本底真空度为9×10-7Torr，采用KrF准分子激光并在波长为248nm、频率为5Hz的条件下制备。
本发明原理为：TCO材料具有较高的导电性，利用生长机制形成一种类岛状形貌，能够有效降低其导电性，实现在TFT中获得理想的关态电流。由于类岛状的TCO薄膜不连续，相邻晶粒之间不能传导，需要沉积一层薄膜填充在晶粒间隙，实现电子在相邻晶粒之间传输。为了维持一个理想的关态电流，填充的薄膜应该具备低的载流子浓度。这里，类岛状的TCO薄膜类似于一个“电子施主”，提高电子，形成良好的开态电流；而低载流子的薄膜类似于一个“电子桥”，连接两个相邻晶粒，使电子能够在相邻晶粒间有效传输并且维持一个理想的关态电流。
相对于现有技术，本发明的薄膜晶体管具有如下优点及有益效果：
(1)本发明利用薄膜生长机制，将类岛状的TCO薄膜作为有源层，这种方式不需要重新制备材料，与现有的TCO材料兼容；
(2)本发明薄膜晶体管中类岛状薄膜非常薄，能够大幅度降低材料的使用；
(3)本发明的器件在室温制备，不需要退火，制备工艺简单；
(4)本发明薄膜晶体管具有高迁移率和稳定性。
附图说明
图1是本发明制备的一种类岛状电子传输的薄膜晶体管的示意图，其中，01-衬底，02-栅极，03-栅极绝缘层，04-非连续的类岛状TCO薄膜，05-低载流子浓度材料薄膜，06-源漏电极。
图2是本发明具有类岛状电子传输的薄膜晶体管的有源层的电子传输示意图。
图3是本发明制备的具有类岛状电子传输的薄膜晶体管的高分辨透射电镜截面图。
图4是本发明制备的具有类岛状电子传输的薄膜晶体管与不同厚度单层薄膜晶体管的转移特性曲线对比图。
图5是本发明制备的具有类岛状电子传输的薄膜晶体管的输出特性曲线图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述，但本发明的实施方式不限于此。
实施例1
本实施例的一种类岛状电子传输的薄膜晶体管，其结构示意图如图1所示，由衬底01上依次设置的栅极02、栅极绝缘层03、有源层和源漏电极06构成；所述有源层包括一层非连续的类岛状TCO薄膜04和一层低载流子浓度材料薄膜05，其中低载流子浓度材料薄膜连接相邻两个类岛状TCO薄膜，形成一个导电通道。
TCO材料具有较高的导电性，利用生长机制形成一种类岛状形貌，能够有效降低其导电性，实现在TFT中获得理想的关态电流。由于类岛状的TCO薄膜不连续，相邻晶粒之间不能传导，需要沉积一层薄膜填充在晶粒间隙，实现电子在相邻晶粒之间传输。为了维持一个理想的关态电流，填充的薄膜应该具备低的载流子浓度。这里，类岛状的TCO薄膜类似于一个“电子施主”，提高电子，形成良好的开态电流；而低载流子的薄膜类似于一个“电子桥”，连接两个相邻晶粒，使电子能够在相邻晶粒间有效传输并且维持一个理想的关态电流。
TCO材料为氧化锌及其掺杂材料或氧化铟及掺杂材料，如ZnO，AZO和ITO等。低载流子浓度材料为超薄绝缘层材料和低载流子半导体材料，如Al2O3，Ga2O3或HfO2等。本实施例采用AZO作为类岛状TCO薄膜材料，采用Al2O3作为低载流子浓度材料。
本实施例的薄膜晶体管通过如下方法制备得到：
(1)室温下在衬底上用直流磁控溅射沉积栅极；
(2)通过阳极氧化将栅极表面氧化，得到栅极绝缘层；
(3)室温下通过脉冲激光沉积(Pulsed Laser Deposition，简称PLD)的方法在栅极绝缘层上表面溅射AZO/Al2O3有源层：先在栅极绝缘层上表面生长一层岛状的AZO薄膜。值得注意的是，AZO薄膜要控制好厚度，避免形成连续薄膜，然后沉积连续的低载流子浓度Al2O3薄膜，且不需要退火；脉冲激光沉积的条件为：本底真空度为9×10-7Torr，采用KrF准分子激光并在波长为248nm、频率为5Hz的条件下制备；
(4)室温下用蒸镀方式沉积源漏电极，源漏电极应覆盖在有源层边界，避免低载流子浓度薄膜影响接触特性，得到一种类岛状电子传输的薄膜晶体管(AZO/Al2O3TFT)。
图2显示了有源层类岛状电子传输的示意图。利用TCO材料的生长机制形成一个类岛状形貌来降低TCO的导电性。根据薄膜异质外延生长机制，薄膜的生长方式与表面能有关。岛状生长需要满足条件：基体与薄膜的自由能之差小于基体与薄膜的界面自由能。薄膜的表面能可以通过生长环境进行一定范围的变化，例如ZnO的表面能在0.1～0.7J/m2。因此，利用这个特性，可以通过控制沉积条件，形成类岛状的TCO薄膜作为有源层。然后在沉积一层低载流子的薄膜，连接类岛状的TCO薄膜，促使相邻类岛状TCO晶粒能够进行电子传输，从而获得优异的薄膜晶体管性能。
图3为本实施例薄膜晶体管的高分辨透射电镜图，从图中可以看到很明显的类岛状AZO形貌，而超薄的连续Al2O3薄膜填充在AZO晶粒的间隙。
薄膜晶体管的性能用Agilent 4155C半导体***分析仪测试，测试在室温大气环境进行。图4是本实施例薄膜晶体管进行检测得到的器件转移特性曲线，横坐标是栅极电压(VG)，纵坐标是源漏电流(ID)。表1是根据图4的结果获得的参数结果，从中可以看出，AZO只有7.6nm时，AZO TFT仍然不能关断，说明AZO电导性太高。而AZO进一步降低到4.7nm时，AZOTFT性能发生反转，有一个较好的关态电流但器件不能正常开启，这是因为AZO形成类岛状性能，相邻晶粒不能进行电子传输。本发明针对这种情况，沉积一层超薄的Al2O3能够有效的激活AZO TFT，这是因为相邻的AZO电子能够通过Frenkel-Poole模式在Al2O3薄膜的缺陷带中传输。AZO/Al2O3TFT展现非常优异的电学性能。
图5是用Agilent 4155C半导体***分析仪测试的AZO/Al2O3TFT的输出特性曲线，横坐标是源漏电压(VD)，纵坐标是源漏电流(ID)，可以观察到非常明显的饱和区，并且没有明显电流拥挤现象，说明器件有一个良好的源/漏接触。
表1根据图4的结果获得的参数结果
由以上结果可以看出，本发明的具有类岛状电子传输的薄膜晶体管，采用类岛状TCO薄膜和超薄的低载流子薄膜堆叠而成作为有源层，能够在室温下以PLD方式制备，不需要退火工艺，所得薄膜晶体管具有高迁移率和高稳定性。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (6)
1.一种类岛状电子传输的薄膜晶体管，由衬底上依次设置的栅极、栅极绝缘层、有源层和源漏电极构成；其特征在于：所述有源层为非连续的类岛状TCO薄膜和低载流子浓度材料薄膜组成的叠层结构，其中低载流子浓度材料薄膜连接相邻两个类岛状TCO薄膜，形成一个导电通道。
2.根据权利要求1所述的一种类岛状电子传输的薄膜晶体管，其特征在于：所述类岛状TCO薄膜的材料为氧化锌或掺杂氧化锌、氧化铟或掺杂氧化铟。
3.根据权利要求2所述的一种类岛状电子传输的薄膜晶体管，其特征在于：所述掺杂氧化锌是指掺铝氧化锌，所述掺杂氧化铟是指掺锡氧化铟。
4.根据权利要求1所述的一种类岛状电子传输的薄膜晶体管，其特征在于：所述低载流子浓度材料为Al2O3、Ga2O3或HfO2。
5.权利要求1～4任一项所述的一种类岛状电子传输的薄膜晶体管的制备方法，其特征在于包括如下制备步骤：
(1)室温下在衬底上用直流磁控溅射沉积栅极；
(2)通过阳极氧化将栅极表面氧化，得到栅极绝缘层；
(3)室温下通过脉冲激光沉积的方法在栅极绝缘层上表面依次溅射非连续的类岛状TCO薄膜和低载流子浓度材料薄膜，得到有源层；
(4)室温下用蒸镀方式沉积源漏电极。
6.根据权利要求5所述的一种类岛状电子传输的薄膜晶体管的制备方法，其特征在于步骤(3)中所述脉冲激光沉积的条件为：本底真空度为9×10-7Torr，采用KrF准分子激光并在波长为248nm、频率为5Hz的条件下制备。
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| US20130062602A1 (en) * | 2010-01-08 | 2013-03-14 | Samsung Electronics Co., Ltd. | Oxide Semiconductor Transistors And Methods Of Manufacturing The Same |
| US20140175427A1 (en) * | 2012-12-25 | 2014-06-26 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor |
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| US20140175427A1 (en) * | 2012-12-25 | 2014-06-26 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor |
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