CN107394003A - The method for manufacturing solar cell - Google Patents
The method for manufacturing solar cell Download PDFInfo
- Publication number
- CN107394003A CN107394003A CN201610326328.1A CN201610326328A CN107394003A CN 107394003 A CN107394003 A CN 107394003A CN 201610326328 A CN201610326328 A CN 201610326328A CN 107394003 A CN107394003 A CN 107394003A
- Authority
- CN
- China
- Prior art keywords
- layer
- solar cell
- doped layer
- face
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000002019 doping agent Substances 0.000 claims abstract description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000009279 wet oxidation reaction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- -1 silicon nitride) Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of method for manufacturing solar cell, is comprised the steps of：Semiconductor substrate is provided, semiconductor substrate has one first face and one second face；Then, one first doped layer is formed on the first face of semiconductor substrate；Then, an electrode is formed on the first doped layer；Then a film layer is deposited on the second face of semiconductor substrate；One second doped layer is re-formed on film layer；And the second doped layer is irradiated using a high-energy light source, at least a portion of the dopant of the second doped layer is diffused to the second face of film layer and semiconductor substrate, to form a heavily doped region.Manufactured solar cell has higher photoelectric conversion rate.
Description
Technical field
The present invention is on a kind of method for manufacturing solar cell, especially with regard to one kind using laser in too
The method of the manufacture solar cell of the shady face selective doping of positive energy battery.
Background technology
Solar cell is by incident light irradiation, makes to produce electron hole pair, Ran Hou at its p-n junction
Electron hole pair in conjunction with being conducted to outer electrode before, to accumulate current forms, is formed electric power and is supplied
The source answered.
For conventional solar cell when backplate is made, its fabrication steps is in the back side of semiconductor substrate
Vapour deposition one passivation layer (passivation layer) and an amorphous (amorphous) disilicide layer is learned, then in mixing
After miscellaneous processing procedure, the amorphous disilicide layer for making deposition using boiler tube thermal oxide and annealing process crystallizes, to reduce resistance
It is anti-, photoelectric conversion rate is lifted, but the effect that the preparation method of traditional back electrode not only crystallizes is limited, nothing
Method effectively reduces impedance, and when thermal oxide and annealing process, the dopant of backplate can be also diffused into
Front electrode, the performance of opto-electronic conversion is influenceed, therefore, is badly in need of a kind of method for manufacturing solar cell at present,
To solve the missing of classical production process, and lift the photoelectric conversion rate of solar cell.
The content of the invention
It is an aspect of the present invention to provide it is a kind of manufacture solar cell method, comprising：Semiconductor is provided
Substrate, the semiconductor substrate have one first face and one second face；One first doped layer is formed in semiconductor-based
On first face of plate；An electrode is formed on the first doped layer；A film layer is deposited in semiconductor substrate
On second face；One second doped layer is formed on film layer, the second doped layer includes a dopant；With
And the second doped layer is irradiated using a high-energy light source, make at least a portion of the dopant of the second doped layer
The second face of film layer and semiconductor substrate is diffused to, and forms a kind of doped region.Disclosed herein
Solar cell has higher photoelectric conversion rate.
In one or more embodiments, being irradiated the second doped layer using high-energy light source and included makes the second doping
Layer produces crystallization.
In one or more embodiments, film layer is by chemical vapor deposition or physical vapour deposition (PVD) shape
Into.
In one or more embodiments, high-energy light source is laser.
In one or more embodiments, film layer is silicon nitride or silica.
In one or more embodiments, the thickness of film layer is less than about 2 nanometers.
In one or more embodiments, dopant includes carbon, oxygen, nitrogen, halogen or its combination.
In one or more embodiments, the method for manufacture solar cell of the invention is further comprising formation
One first anti-reflecting layer is on the first doped layer；And one conductive metal layer of coating is in the first anti-reflecting layer and the
On two doped layers.
In one or more embodiments, conductive metal layer is copper, aluminium, titanium, silver or gold.
In one or more embodiments, the method for manufacture solar cell of the invention is further comprising formation
One second anti-reflecting layer is on the second doped layer.
Brief description of the drawings
To make above and other purpose, feature, advantage and the embodiment of present invention more to become apparent,
Appended accompanying drawing is described as follows：
Fig. 1 is the flow chart according to the manufacture method of the solar cell depicted in one embodiment of the invention
Schematic diagram；
Fig. 2~8 are each systems according to the manufacture method of the solar cell depicted in one embodiment of the invention
The diagrammatic cross-section in journey stage.
Embodiment
Multiple embodiments of the present invention will be disclosed with accompanying drawing below, as clearly stated, in many practices
Details will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied
To limit the present invention.That is, in some embodiments of the present invention, the details right and wrong in these practices
It is necessary.In addition, for the sake of simplifying accompanying drawing, some known usual structures in the accompanying drawings will be with letter with element
The mode singly illustrated illustrates.
An aspect of of the present present invention is providing a kind of method for manufacturing solar cell, the step 110 of reference picture 1
And Fig. 2, present invention firstly provides semiconductor substrate 200, its have the first face 210 relative to each other and
Second face 220, after completing to manufacture solar cell, the first face is the side to light of solar cell, the
Two faces 220 are the shady face of solar cell.According to some embodiments of the present invention, semiconductor substrate 200
Can be silicon substrate, such as monocrystalline silicon substrate, polycrystalline silicon substrate or amorphous silicon substrate.In certain embodiments,
Semiconductor substrate 200 can be the silicon substrate of n-type or p-type.
In certain embodiments, can be carried out slightly in the first face 210 of semiconductor substrate 200 and the second face 220
Roughening processing procedure, to reduce the reflectivity of incident light.Such as chemical acid etching processing procedure (etching solvent can be used
Can be hydrofluoric acid or nitric acid) or the alkaline etch process (etching solvent can be potassium hydroxide or isopropanol) of chemistry it is right
First face 210 of semiconductor substrate 200 and the second face 220 carry out roughening processing procedure, so that semiconductor substrate
200 have the first coarse face 210 and the second face 220 (as shown in Figure 1).
Then, the step 120 of reference picture 1 and Fig. 2, the first face 210 of semiconductor substrate 200 is carried out from
Sub- implant is to form the first doped layer 300 on the first face 210 of semiconductor substrate 200.In some implementations
Example in, when semiconductor substrate 200 is p-type silicon substrate, using ion implant mode adulterate n-type adulterate from
Son on the first face 210 of semiconductor substrate 200 to form the first doped layer 300 of n-type；Work as semiconductor
When substrate is n-type silicon substrate, then the first face 210 of doped p type Doped ions to semiconductor substrate 200
On to form the first doped layer 300 of p-type, whereby formed p-n junction in semiconductor substrate 200 and first
Between doped layer 210.
Afterwards, the step 130 of reference picture 1 and Fig. 3, in forming an electrode 500 on the first doped layer 300.
Being formed for electrode 500 can utilize the mode of plating or elargol wire mark to be formed.Electrode can be bus electrode (Bus
Bar electrode) or finger electrode (Finger Electrode), it is preferable using finger electrode, reduces whereby to entering
Penetrate the masking of light.And the material of electrode can be nickel, copper, silver, aluminium, titanium, other can be electrode conduction material
Matter or its combination.
In certain embodiments, can be further in one first anti-reflecting layer of formation on the first doped layer 300
(Anti-Reflection layer) 400 (as shown in Figure 3), it can not only reduce the volume reflection of incident light, also may be used
Completely cut off the electron hole pair in the face of solar cell first in conjunction with effect, and then lift photoelectric conversion rate.First
The material of anti-reflecting layer 400 can be nitride (such as silicon nitride), oxide (such as silica) or other materials
The multilayer film (such as titanium oxide and aluminum oxide) of matter is stacked and formed.In certain embodiments, the first anti-reflecting layer
400 formation can pass through wet oxidation (Wet Oxidation), dry oxidation (Dry Oxidation), chemical gas
The mutually side such as deposition (CVD), plasma-assisted chemical vapour deposition (PECVD) or physical vapour deposition (PVD) (PVD)
Made by method.
Then, the step 140 of reference picture 1 and Fig. 4, deposited on the second face 220 of semiconductor substrate 200
One film layer 600.Film layer 600 can prevent electron hole pair in conjunction with effect, to increase photoelectric conversion rate,
It is tunneling with sharp electron hole pair about less than 2 nanometers and the thickness of film layer 600 should not be too thick.One
In a little embodiments, film layer can by wet oxidation (Wet Oxidation), dry oxidation (Dry Oxidation),
Chemical vapor deposition (CVD), plasma-assisted chemical vapour deposition (PECVD) or physical vapour deposition (PVD) (PVD)
The methods of formed, wherein to be formed as preferable using chemical gaseous phase depositing process.In certain embodiments, it is thin
The material of film layer 600 can be silicon, nitride (such as silicon nitride), oxide (such as silica).
Then, the step 150 of reference picture 1 and Fig. 5, formed one second doped layer 700 in film layer 600 it
On, the second doped layer 700 includes a dopant, in certain embodiments, dopant can be silicon, carbon,
Oxygen, nitrogen, halogen etc. or its combination.And the second doped layer 700 be using chemical vapor deposition (CVD), etc.
Ion assisted chemical is vapor-deposited (PECVD) or formed the methods of physical vapour deposition (PVD) (PVD), wherein with profit
Be formed as preferable with chemical gaseous phase depositing process.The material of second doped layer 700 can be silicon, nitride (example
Such as silicon nitride), oxide (such as silica).
Afterwards, the step 160 of reference picture 1 and Fig. 6, the second doped layer 700 is irradiated using high-energy light source,
At least a portion of the dopant of the second doped layer 700 is set to diffuse to film layer 600 and semiconductor substrate
200 the second face 220 is to form a heavily doped region 710.High-energy light source irradiates the second doped layer 700 can
Second doped layer 700 is irradiated with selectively formed heavily doped region 710 in film layer 600 and half with local strengthening
In second face 220 of conductor substrate 200, and can using the irradiation energy and time for controlling high-energy light source come
The concentration of the dopant of control heavily doped region 710 to be doped into, is adulterated by increasing in heavily doped region 710
The concentration of material reduces the impedance of solar cell, and then lift opto-electronic conversion to increase back surface field effect
Rate.In addition, coming from the second doped layer 700 by irradiation high-energy light can also increase by the second doped layer
700 crystallinity, effectively lifts photoelectric conversion rate.In certain embodiments, high-energy light source can be laser.
In certain embodiments, one second anti-reflecting layer 800 can further be formed in the second doped layer 700
Upper (as shown in Figure 7).The material of second anti-reflecting layer 800 can be nitride (such as silicon nitride), oxide (example
Such as silica) or other materials multilayer film (such as titanium oxide, aluminum oxide) stack form.In some embodiments
In, the formation of the second anti-reflecting layer 800 can pass through wet oxidation (Wet Oxidation), dry oxidation (Dry
Oxidation), chemical vapor deposition (CVD), plasma-assisted chemical vapour deposition (PECVD) or physics gas
It is mutually made the methods of deposition (PVD).
In certain embodiments, a conductive metal layer 900 can be further coated with the first anti-reflecting layer 400
And second on doped layer 700 or the second anti-reflecting layer 800 (as shown in Figure 8).Conductive metal layer 900 can profit
With chemical vapor deposition (CVD), plasma-assisted chemical deposition (PECVD) or physical vapour deposition (PVD) (PVD)
Mode is formed.The material of conductive metal layer 900 can be copper, titanium, aluminium, gold, silver, tungsten, chromium, cobalt etc. or
It is combined.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any to be familiar with
This those skilled in the art, without departing from the spirit and scope of the present invention, when that can be used for a variety of modifications and variations, therefore
Protection scope of the present invention is worked as to be defined depending on appended claims limited range.
Claims (10)
- A kind of 1. method for manufacturing solar cell, it is characterised in that include：Semiconductor substrate is provided, the semiconductor substrate has one first face and one second face relative to each other；One first doped layer is formed on first face of the semiconductor substrate；An electrode is formed on the first doped layer；A film layer is deposited on second face of the semiconductor substrate；One second doped layer is formed on the film layer, second doped layer includes a dopant；AndSecond doped layer is irradiated using a high-energy light source, makes the dopant of second doped layer extremely A few part diffuses to the film layer and second face of the semiconductor substrate, to form a heavily doped region.
- 2. the method for manufacture solar cell according to claim 1, it is characterised in that utilizing should High-energy source light source, which irradiates second doped layer and included, makes second doped layer produce crystallization.
- 3. the method for manufacture solar cell according to claim 1, it is characterised in that the film Layer is formed by chemical vapor deposition or physical vapour deposition (PVD).
- 4. the method for manufacture solar cell according to claim 1, it is characterised in that the high energy Amount light source is laser.
- 5. the method for manufacture solar cell according to claim 1, it is characterised in that the film Layer is silicon nitride or silica.
- 6. the method for manufacture solar cell according to claim 1, it is characterised in that the film The thickness of layer is less than 2 nanometers.
- 7. the method for manufacture solar cell according to claim 1, it is characterised in that the doping Material includes carbon, oxygen, nitrogen, halogen or its combination.
- 8. the method for manufacture solar cell according to claim 1, it is characterised in that further Comprising：One first anti-reflecting layer is formed on first doped layer；AndA conductive metal layer is coated with first anti-reflecting layer and second doped layer.
- 9. the method for manufacture solar cell according to claim 8, it is characterised in that the conduction Metal level is copper, aluminium, titanium, silver or gold.
- 10. the method for manufacture solar cell according to claim 1, it is characterised in that further Comprising one second anti-reflecting layer of formation on second doped layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610326328.1A CN107394003A (en) | 2016-05-17 | 2016-05-17 | The method for manufacturing solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610326328.1A CN107394003A (en) | 2016-05-17 | 2016-05-17 | The method for manufacturing solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107394003A true CN107394003A (en) | 2017-11-24 |
Family
ID=60338585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610326328.1A Pending CN107394003A (en) | 2016-05-17 | 2016-05-17 | The method for manufacturing solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107394003A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040200520A1 (en) * | 2003-04-10 | 2004-10-14 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| CN101931029A (en) * | 2009-06-18 | 2010-12-29 | Lg电子株式会社 | The method of solar cell and manufacturing solar cell |
-
2016
- 2016-05-17 CN CN201610326328.1A patent/CN107394003A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040200520A1 (en) * | 2003-04-10 | 2004-10-14 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| CN101931029A (en) * | 2009-06-18 | 2010-12-29 | Lg电子株式会社 | The method of solar cell and manufacturing solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11605750B2 (en) | Solar cell having an emitter region with wide bandgap semiconductor material | |
| US9716204B2 (en) | Method for producing a photovoltaic solar cell having at least one heterojunction passivated by means of hydrogen diffusion | |
| JP2022501837A (en) | Crystalline silicon solar cell and its manufacturing method | |
| US11264529B1 (en) | Solar cell and method for manufacturing the same | |
| EP2811539B1 (en) | Solar cell with multilayered structure and manufacturing method thereof | |
| US20150270421A1 (en) | Advanced Back Contact Solar Cells | |
| TWI685117B (en) | Passivation of light-receiving surfaces of solar cells with crystalline silicon and a method of facricating the solar cells | |
| KR101768907B1 (en) | Method of fabricating Solar Cell | |
| CN111755552A (en) | Solar cell and manufacturing method thereof | |
| KR20160090287A (en) | Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells | |
| US20130089943A1 (en) | Method of manufacturing a solar cell | |
| US11101398B2 (en) | Blister-free polycrystalline silicon for solar cells | |
| CN111133589B (en) | Dopant enhanced solar cell and method of manufacturing the same | |
| CN106784074A (en) | N-type double-side cell structure | |
| KR20160013751A (en) | Solar cell and the manufacturing mathod thereof | |
| JP6681878B2 (en) | Photoelectric conversion element and method for manufacturing photoelectric conversion element | |
| CN112133769A (en) | Solar cell and method for manufacturing same | |
| CN107394003A (en) | The method for manufacturing solar cell | |
| CN113314622A (en) | Solar cell and preparation method thereof | |
| TW201742260A (en) | Method of fabricating solar cell | |
| CN216054727U (en) | Solar cell | |
| WO2022134990A1 (en) | Solar cell and production method, and photovoltaic module | |
| EP4333080A1 (en) | Contact structure applied to tunneling type solar cell, solar cell having contact structure and manufacturing method therefor | |
| CN101312222A (en) | Method of manufacturing solar cell | |
| TWI645572B (en) | A method for fabricating crystalline silicon wafer based solar cells with local back fields |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171124 |