CN107385514B - Annealing device of monocrystalline silicon furnace - Google Patents
Annealing device of monocrystalline silicon furnace Download PDFInfo
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- CN107385514B CN107385514B CN201710621465.2A CN201710621465A CN107385514B CN 107385514 B CN107385514 B CN 107385514B CN 201710621465 A CN201710621465 A CN 201710621465A CN 107385514 B CN107385514 B CN 107385514B
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- annealing
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- furnace
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- 238000000137 annealing Methods 0.000 title claims abstract description 102
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 48
- 238000009413 insulation Methods 0.000 claims description 15
- 239000000523 sample Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 5
- 239000004917 carbon fiber Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The utility model provides a monocrystalline silicon stove annealing device, includes main furnace chamber, vice furnace chamber and heater, main furnace chamber sets up in the bottom main furnace chamber top is equipped with vice furnace chamber, vice furnace chamber is inside to be equipped with the annealing chamber, be equipped with the heater in the annealing chamber, the heater includes the heating plate unit, and the heating plate unit is annular, carries out the stack in proper order and fixes, forms cylindric, and every a plurality of heating plate unit forms a set of, and a plurality of group forms a complete heater, through PLC programming controller, comes the control region that generates heat to rationally adjust the heating region according to actual demand, like the size and the length of crystal bar, make full use of monocrystalline furnace internal high temperature stove gas reduces the energy consumption, improves silicon rod quality accurate control heating position and heating time.
Description
Technical Field
The invention relates to the field of monocrystalline processing preparation, in particular to a monocrystalline silicon furnace annealing device.
Background
With the continuous expansion of the market demand for single crystals, the quality requirements of single crystal silicon rods are increasingly improved. As a mainstream method for preparing single crystals, a Czochralski single crystal production method is used, and interstitial oxygen in silicon is gradually converted into oxygen donors in the cooling process of a pulled silicon rod to form a boron-oxygen complex, so that the resistivity of the silicon rod is seriously affected and even the inversion is generated. Typical single crystal annealers can convert oxygen donors to interstitial oxygen states, but require re-heating with significant drawbacks of the prior art: oxygen exists in the form of oxygen donors in the Czochralski silicon rod, which leads to uneven resistivity distribution, particularly excessive head resistivity and even inversion. The common annealing furnace needs to anneal the silicon rod from low temperature to about 700 ℃, and a great deal of energy consumption is wasted in the annealing process.
In general, annealing is generally performed on a monocrystalline silicon piece sliced from a monocrystalline silicon rod in a special annealing furnace, and a part of the annealed monocrystalline silicon piece is warped or oxidized. The annealing of the single crystal silicon rod mainly adopts a single annealing furnace after discharging, and the whole rod is heated and annealed, in addition, the temperature and the duration time of annealing are different for crystal rods with different specifications, and in addition, the heated areas are not completely the same in different time periods in the annealing process.
Disclosure of Invention
In view of the above, it is desirable to provide a single crystal silicon furnace annealing apparatus that can combine the effectiveness of a single crystal furnace with that of an annealing furnace and in which the annealing position area is adjustable.
The utility model provides a monocrystalline silicon stove annealing device for install on the main furnace chamber of production monocrystalline silicon, in order to carry out annealing to the monocrystalline silicon of this main furnace chamber production, this monocrystalline silicon stove annealing device includes vice furnace chamber and heater, vice furnace chamber is located the top of main furnace chamber, vice furnace chamber is inside to be equipped with annealing chamber, annealing intracavity is equipped with the heater, the heater includes a plurality of heating plate group, the heating plate group includes a plurality of heating plate units, the heating plate unit is the annular, stacks in proper order fixedly, forms cylindric, annealing intracavity is equipped with the thermocouple probe, main furnace chamber one side be equipped with the air-blower, the thermocouple probe air-blower and every group the heating plate unit all is connected with the PLC programming controller respectively.
Each group of heating plate units form a group and share a set of lines, each group of heating plate units is connected with a PLC (programmable logic controller), each group of heating plate units is independently controlled by the PLC, and although the installation position of a heater is fixed, the on-off of each group of heating plate units is independently controlled, so that the change of a heating area is indirectly realized, and in addition, the number of the heating plate units can be adjusted, so that the accurate control of the temperature is realized; the thermocouple probe and the PLC programming controller transmit the temperature information of the annealing cavity to the PLC programming controller in real time, so that the PLC programming controller can control the heater, and the temperature is kept in a preset range.
The invention provides a monocrystalline silicon furnace annealing device, which combines an annealing device with a monocrystalline furnace, utilizes waste heat of the monocrystalline furnace to anneal, uses a heater to heat, controls a heating area through a PLC (programmable logic controller), indirectly realizes adjustment of the heating area, thereby reasonably adjusting the heating area according to actual requirements, such as the size and the length of a crystal bar, accurately controlling the heating position and the heating time, fully utilizing high-temperature furnace gas in the monocrystalline furnace, reducing energy consumption, improving the quality of the silicon bar, and better adjusting the heating area compared with the prior art so as to realize rapid and accurate control of the temperature in the furnace more rapidly.
In addition, the annealing device of the monocrystalline silicon furnace provided by the invention can also have the following additional technical characteristics:
further, the device adopts a bottom inflation mode, a blower is installed at the solid-liquid interface of the main furnace chamber, one end of the blower is connected with the PLC, the other end of the blower is respectively connected with a power supply, the power supply is connected with a power switch, and the power supply supplies power to the blower.
Argon is introduced through the blower, so that the direction of the air flow is ensured to be from bottom to top, and meanwhile, dust and dust of the carbon fiber insulation board can be prevented from being brought into the silicon melt by the air flow.
The auxiliary furnace chamber is provided with a widened annealing cavity, a heat insulation board is arranged above and around the cavity, a heater is arranged around the cavity, a thermocouple probe is arranged in the annealing cavity, the temperature can be compensated by the heater through feedback of the probe, the temperature of the cavity is ensured to be 500-700 ℃, the annealing process lasts for 1-2 h, the power supply of the heater is disconnected after annealing is finished, and the annealing cavity is cooled along with the furnace.
Further, the annealing cavity is positioned in the middle of the auxiliary furnace chamber, and the annealing cavity heat-insulating shell is connected with the auxiliary furnace chamber heat-insulating shell, so that the head section of the crystal bar is ensured to be positioned in the annealing cavity when annealing is started.
Furthermore, the heat insulation guard plates 4 are arranged at the periphery and the top of the annealing cavity, so that rising heat can be better collected and stored, and a relatively stable thermal field is provided for the annealing cavity.
Further, heaters are arranged around the annealing cavity to provide temperature compensation for an annealing area, heating power of the resistance wire is adjustable, the temperature in the cavity is ensured to be stabilized at 500-700 ℃, the actual temperature is fed back by a thermocouple probe, the annealing process lasts for 1-2 hours, the power supply of the heaters is disconnected after the annealing is finished, and the annealing is cooled along with a furnace.
Furthermore, the single crystal furnace body adopts a mode of air inlet of a main furnace chamber and air exhaust of the top of an auxiliary furnace chamber;
furthermore, the heat insulation board adopts a carbon fiber heat insulation board, and the laying positions are the side part and the upper part of the annealing cavity.
Further, the height of the annealing cavity is 1000 mm-1500 mm from the main furnace chamber, and the longitudinal length of the cavity is 450-650 mm.
Furthermore, the invention can be applied to single crystal furnaces of different models, and the transverse width of the annealing cavity is 400-800 mm wider than that of the auxiliary furnace chamber, so that the heat insulation board and the heater can be arranged inside the annealing cavity.
Further, the annealing of the invention is that after the crystal pulling is finished, the crystal bar head section starts after entering the annealing cavity, the annealing heat preservation lasts for 1-2 hours, and the annealing heat preservation is cooled along with the furnace.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic diagram of the overall structure of an annealing device of a single crystal silicon furnace according to an embodiment of the invention.
Fig. 2 is a schematic circuit connection diagram of an annealing device of a single crystal silicon furnace according to an embodiment of the invention.
Fig. 3 is a schematic view of the heater of fig. 1.
Fig. 4 is a cross-sectional view of the heater of fig. 1.
Detailed Description
In order that the objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," "upper," "lower," and the like are used herein for descriptive purposes only and not to indicate or imply that the apparatus or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1-4, an annealing device for a single crystal silicon furnace in an embodiment of the present invention is configured to be installed on a main furnace chamber for producing single crystal silicon, so as to anneal the single crystal silicon produced in the main furnace chamber, where the annealing device for a single crystal silicon furnace includes a sub-furnace chamber 5 and a heater, the sub-furnace chamber 5 is disposed at the top of the main furnace chamber 1, an annealing chamber 10 is disposed in the sub-furnace chamber 5, a heater 7 is disposed in the annealing chamber 10, the heater 7 includes a heating sheet unit 2, the heating sheet unit 2 is annular, and is sequentially stacked and fixed to form a cylinder, each of a plurality of heating sheet units forms a group, a plurality of groups form a complete heater 7, each of a plurality of heating sheet units forms a group, and shares a set of lines, each group of heating sheet units is connected with a PLC programming controller 6, and each group of heating sheet units is individually controlled by the PLC programming controller 6, although the installation position of the heater 7 is fixed, the installation position of each group of heating sheet units is separately controlled, so that the heating sheet unit is indirectly controlled to realize the change of the heating sheet unit, and the heating sheet unit is heated by the N-number of the heating sheet unit.
In addition, the thermocouple probe and the PLC 6 transmit temperature information of the annealing chamber 10 to the PLC 6 in real time, so that the PLC 6 can control the heater 7 to maintain the temperature within a preset range.
The main furnace chamber is internally provided with a quartz crucible and a graphite crucible, silicon liquid is contained in the quartz crucible, a guide cylinder is arranged above the graphite crucible, and a graphite jacking column is arranged below the graphite crucible.
One end of the blower 9 and one end of the heater 7 are connected with the same PLC programming controller 6, the other end of the blower 9 and the other end of the heater 7 are respectively connected with a power supply 13, the power supply 13 is connected with a power switch 11, and the power supply 1 supplies power to the blower 9 and the heater 7.
The device adopts a bottom inflation mode, and the air blower 9 is installed at the solid-liquid interface of the main furnace chamber, argon is introduced through the air blower 9, so that the air flow direction is ensured to be from bottom to top, and meanwhile, dust and dust of the carbon fiber insulation board can be prevented from being brought into the silicon melt by the air flow.
The auxiliary furnace chamber 5 is provided with a widened annealing chamber 10, a heat insulation board 4 is arranged above and around the chamber body of the annealing chamber 10, a heater 7 is arranged around the chamber body, meanwhile, a thermocouple probe 12 is arranged in the annealing chamber 10, temperature feedback is carried out through the thermocouple probe 12, the heater 7 can be controlled to compensate the temperature, the temperature of the annealing chamber 10 is ensured to be 500-700 ℃, the annealing process lasts for 1-2 hours, the power supply of the heater is disconnected after annealing is finished, and the annealing furnace is cooled.
In the single crystal pulling process, the head section of the crystal bar 3 can slowly enter and stay in the annealing cavity 10, argon in the main furnace chamber 1 can be cooled in the cooling stage, heat in the main furnace chamber 1 is driven to enter the annealing cavity, and meanwhile, the heater 7 compensates the heat, so that a good annealing heat source can be provided.
The hearth adopts a blower to blow air at the solid-liquid interface of the main hearth chamber, so that air flow is ensured to pass through the annealing cavity from bottom to top, high-temperature furnace gas can provide a heat source for the annealing cavity, annealing energy consumption is reduced, and the main hearth chamber in the cooling stage can be purged;
the heat insulation guard plates 4 are arranged at the periphery and the top of the annealing cavity 10, so that rising heat can be better collected and stored, and a relatively stable thermal field is provided for the annealing cavity;
the periphery of the annealing cavity is provided with a heater 7, so that temperature compensation is provided for an annealing area, the heating power of the resistance wire is adjustable, the temperature in the cavity is ensured to be stabilized at 500-700 ℃, the actual temperature is fed back by a thermocouple probe, the annealing process lasts for 1-2 hours, the power supply of the heater is disconnected after the annealing is finished, and the annealing is cooled along with a furnace;
in the invention, the single crystal furnace body adopts a mode of air intake of a main furnace chamber and air exhaust of the top of an auxiliary furnace chamber;
the heat insulation board 4 adopts a carbon fiber heat insulation board, and the laying positions are the side part and the upper part of the annealing cavity;
the height of the annealing cavity 10 is 1000 mm-1500 mm from the main furnace chamber, and the longitudinal length of the cavity is 450-650 mm;
the invention can be applied to single crystal furnaces of different models, and the transverse width of the annealing cavity is 400-800 mm wider than that of the auxiliary furnace chamber, so that the heat insulation board 4 and the heater 7 can be ensured to be arranged inside;
after the crystal pulling is finished, the annealing is started after the crystal bar head section enters an annealing cavity, and the annealing heat preservation lasts for 1-2 hours and is cooled along with the furnace;
the invention provides a monocrystalline silicon furnace annealing device, which combines an annealing device with a monocrystalline furnace, utilizes waste heat of the monocrystalline furnace to anneal, uses a heater to heat, controls a heating area through a PLC (programmable logic controller), indirectly realizes adjustment of the heating area, thereby reasonably adjusting the heating area according to actual requirements, such as the size and the length of a crystal bar, accurately controlling the heating position and the heating time, fully utilizing high-temperature furnace gas in the monocrystalline furnace, reducing energy consumption, improving the quality of the silicon bar, better adjusting the heating area, and realizing rapid and accurate control of the temperature in the furnace more quickly compared with the prior art.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (4)
1. A single crystal silicon furnace annealing apparatus for mounting on a main furnace chamber for producing single crystal silicon to anneal the single crystal silicon produced in the main furnace chamber, characterized in that: the annealing device of the monocrystalline silicon furnace comprises an auxiliary furnace chamber and a heater, wherein the auxiliary furnace chamber is arranged at the top of a main furnace chamber, an annealing cavity is arranged in the auxiliary furnace chamber, the heater is arranged in the annealing cavity, the heater comprises a plurality of heating plate groups, each heating plate group comprises a plurality of heating plate units, the heating plate units are annular and are sequentially overlapped and fixed to form a cylinder shape, a thermocouple probe is arranged in the annealing cavity, a blower is arranged on one side of the main furnace chamber, and the thermocouple probe, the blower and each group of heating plate units are respectively connected with a PLC;
the annealing device of the monocrystalline silicon furnace adopts a bottom inflation mode, a blower is arranged at a solid-liquid interface of the main furnace chamber, and the blower is used for introducing argon into the main furnace chamber;
the periphery and the top of the annealing cavity are provided with heat insulation boards;
the height of the annealing cavity is 1000 mm-1500 mm from the main furnace chamber, and the longitudinal length of the cavity of the annealing cavity is 450 mm-650 mm;
the transverse width of the annealing cavity is 400-800 mm wider than that of the auxiliary furnace chamber.
2. The single crystal silicon furnace annealing apparatus according to claim 1, wherein: the annealing cavity is arranged in the middle of the auxiliary furnace chamber.
3. The single crystal silicon furnace annealing apparatus according to claim 1, wherein: the heater is arranged around the annealing cavity.
4. The single crystal silicon furnace annealing apparatus according to claim 1, wherein: the heat insulation board adopts a carbon fiber heat insulation board, and the laying positions are the side part and the upper part of the annealing cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710621465.2A CN107385514B (en) | 2017-07-27 | 2017-07-27 | Annealing device of monocrystalline silicon furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710621465.2A CN107385514B (en) | 2017-07-27 | 2017-07-27 | Annealing device of monocrystalline silicon furnace |
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| CN107385514A CN107385514A (en) | 2017-11-24 |
| CN107385514B true CN107385514B (en) | 2023-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710621465.2A Active CN107385514B (en) | 2017-07-27 | 2017-07-27 | Annealing device of monocrystalline silicon furnace |
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| CN108949509A (en) * | 2018-09-29 | 2018-12-07 | 深圳市艺盛科五金电子有限公司 | A kind of accurate temperature regulating device and method for probe anneals processing |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10194898A (en) * | 1997-01-09 | 1998-07-28 | Japan Energy Corp | Manufacture of gallium-arsenic seed crystal |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
| CN201158722Y (en) * | 2008-01-30 | 2008-12-03 | 大庆佳昌科技有限公司 | Thermal field device for gallium arsenide crystal growth |
| CN201495105U (en) * | 2009-08-21 | 2010-06-02 | 南安市三晶阳光电力有限公司 | Ingot furnace heater capable of gradient temperature control |
| CN104726931A (en) * | 2015-03-30 | 2015-06-24 | 江苏盎华光伏工程技术研究中心有限公司 | Single crystal furnace with annealing device and control method for single crystal furnace |
| CN105887205A (en) * | 2016-06-27 | 2016-08-24 | 无锡宏纳科技有限公司 | High temperature furnace for diffusion |
-
2017
- 2017-07-27 CN CN201710621465.2A patent/CN107385514B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10194898A (en) * | 1997-01-09 | 1998-07-28 | Japan Energy Corp | Manufacture of gallium-arsenic seed crystal |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
| CN201158722Y (en) * | 2008-01-30 | 2008-12-03 | 大庆佳昌科技有限公司 | Thermal field device for gallium arsenide crystal growth |
| CN201495105U (en) * | 2009-08-21 | 2010-06-02 | 南安市三晶阳光电力有限公司 | Ingot furnace heater capable of gradient temperature control |
| CN104726931A (en) * | 2015-03-30 | 2015-06-24 | 江苏盎华光伏工程技术研究中心有限公司 | Single crystal furnace with annealing device and control method for single crystal furnace |
| CN105887205A (en) * | 2016-06-27 | 2016-08-24 | 无锡宏纳科技有限公司 | High temperature furnace for diffusion |
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