CN107385514A - A kind of monocrystaline silicon stove annealing device - Google Patents
A kind of monocrystaline silicon stove annealing device Download PDFInfo
- Publication number
- CN107385514A CN107385514A CN201710621465.2A CN201710621465A CN107385514A CN 107385514 A CN107385514 A CN 107385514A CN 201710621465 A CN201710621465 A CN 201710621465A CN 107385514 A CN107385514 A CN 107385514A
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- annealing device
- anneal
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- 238000000137 annealing Methods 0.000 title claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000000523 sample Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 27
- 238000005265 energy consumption Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of monocrystaline silicon stove annealing device, including main furnace chamber, secondary furnace chamber and heater, the main furnace chamber is arranged on bottom, secondary furnace chamber is provided with the top of the main furnace chamber, anneal chamber is provided with inside the secondary furnace chamber, heater is provided with the anneal chamber, the heater includes heater chip module, heater chip module is annular, fixation is overlapped successively, formed cylindric, one group is formed per several heater chip modules, several groups form a complete heater, pass through PLC, to control the region of heating, so as to according to the actual requirements, size and length such as crystal bar carry out Reasonable adjustment heating region, make full use of high-temperature furnace gas in single crystal growing furnace, reduce energy consumption, improve silicon rod quality and accurately control heating location and heat time.
Description
Technical field
The present invention relates to monocrystalline to process preparation field, more particularly to a kind of monocrystaline silicon stove annealing device.
Background technology
With continuous expansion of the market to monocrystalline demand, the quality requirements of silicon single crystal rod improve all the more.Pulling of crystals manufactures
Main stream approach of the method as single crystal preparation, in cooling procedure, the interstitial oxygen concentration in silicon can gradate as oxygen alms giver lifting silicon rod,
Boron oxygen complex is formed, silicon rod resistivity is had a strong impact on or even produces transoid.General monocrystalline annealing furnace can convert oxygen alms giver
For gap oxygen condition, but the major defect for the larger prior art of energy consumption that needs to heat up again：Inside pulling of crystals silicon rod oxygen with
Oxygen alms giver form is present, and causes resistivity skewness, particularly head resistivity too high or even transoid occurs.Common annealing
Silicon rod need to be risen to 700 DEG C or so by low temperature and be annealed by stove, need to waste a large amount of energy consumptions during this.
Under normal circumstances, the monocrystalline silicon piece annealed after being cut into slices generally directed to silicon single crystal rod, the annealing to monocrystalline silicon piece is special
Carried out in the annealing furnace of door, warpage or the phenomenon of oxidation occurs in part silicon chip after annealing.Annealing for silicon single crystal rod is also main
Be after coming out of the stove, using independent annealing furnace, to whole rod heating anneal, in addition, for the crystal bar of different size, temperature during annealing and
Duration is also different, in addition, in annealing process, different time sections, the region of heating is also incomplete same.
The content of the invention
In view of above-mentioned condition, it is necessary to provide one kind can single crystal growing furnace be combined and annealing position area with annealing furnace effect
The adjustable monocrystaline silicon stove annealing device in domain.
A kind of monocrystaline silicon stove annealing device, for the main furnace chamber installed in production monocrystalline silicon, to be produced to the main furnace chamber
Monocrystalline silicon annealed, the monocrystaline silicon stove annealing device includes secondary furnace chamber and heater, and the secondary furnace chamber is located at the main stove
The top of room, the secondary furnace chamber inside are provided with anneal chamber, heater are provided with the anneal chamber, and the heater includes some add
Backing group, the heating plate group include some heater chip modules, and the heater chip module is annular, is overlapped fixation successively,
Cylindrical shape is formed, thermocouple probe is provided with the anneal chamber, described main furnace chamber side is provided with air blower, and the thermocouple is visited
Heater chip module described in pin, the air blower and every group is all connected with PLC respectively.
Per several heater chip modules formed one group, share a set of circuit, every group of heater chip module all with PLC programming Controls
Device is connected, and every group of heater chip module is individually controlled by PLC, although the installation site installation of heater
It is fixed, but by individually controlling the break-make of every group of heater chip module, so as to indirectly realize the change to heating region, this
Outside, the quantity of heater chip module can also be adjusted, so as to realize being accurately controlled for temperature；Thermocouple probe is controlled with PLC programmings
Device processed, the temperature information of anneal chamber being transmitted to PLC in real time so that PLC can control heater,
So that temperature is maintained in default scope.
The present invention proposes monocrystaline silicon stove annealing device, by the way that annealing device and single crystal growing furnace are combined, utilizes single crystal growing furnace
Waste heat is annealed, and is heated by using heater, by PLC, to control the region of heating, indirectly
Adjustment heating region is realized, so as to which according to the actual requirements, the size and length such as crystal bar are come Reasonable adjustment heating region, essence
Really control heating location and heat time, high-temperature furnace gas in single crystal growing furnace is made full use of, reduce energy consumption, improve silicon rod quality, phase
Than prior art, heating region can be preferably adjusted, is quickly and precisely controlled more quickly to be realized to in-furnace temperature.
In addition, according to monocrystaline silicon stove annealing device provided by the invention, there can also be technical characteristic additional as follows：
Further, the present apparatus uses bottom inflatable mode, and air blower, air blower are provided with by main furnace chamber solid liquid interface
One end is connected with same PLC, and the other end is connected with power supply respectively, and power supply is connected with power switch, and power supply is to air blast
Machine is powered.
Argon gas is passed through by air blower, ensures airflow direction from down to up, while can prevent that air-flow is fine by dust and carbon
Dimension warming plate plate dust is brought into silicon melt.
One anneal chamber widened is set in secondary furnace chamber, cavity top and periphery are provided with heat insulating board, pacified around cavity
Equipped with heater, while thermocouple probe is provided with the anneal chamber, by the feedback popped one's head in temperature, can control heater pair
Temperature is compensated, and ensures cavity temperature at 500-700 DEG C, and annealing process continues 1~2h, and heater electricity is disconnected after annealing
Source, furnace cooling.
Further, anneal chamber position is in the middle part of secondary furnace chamber, anneal chamber lagging casing and secondary furnace chamber lagging casing phase
Even, crystal bar head section is in anneal chamber when guarantee starts annealing.
Further, the surrounding of anneal chamber and top are equipped with heat-insulated backplate 4, can preferably collect storage and rise heat,
Also metastable thermal field is provided for anneal chamber.
Further, surrounding is equipped with heater in anneal chamber, and temperature-compensating, Resistant heating power are provided for annealing region
It is adjustable, ensure that cavity temperature is stable at 500-700 DEG C, actual temperature is fed back by thermocouple probe, and annealing process continues 1~
2h, heater power source, furnace cooling are disconnected after annealing.
Further, monocrystalline body of heater uses main furnace chamber air inlet, the mode of secondary furnace chamber top vent in the present invention；
Further, heat insulating board uses Carbon fiber thermal insulation plate in the present invention, paving location be anneal chamber sidepiece and on
Portion.
Further, the main furnace chamber 1000mm~1500mm of anneal chamber height distance, 450~650mm of cavity longitudinal length.
Further, present invention can apply to different model single crystal growing furnace, the more secondary furnace chamber of anneal chamber transverse width is wide by 400~
800mm, ensure that inside can install heat insulating board and heater.
Further, present invention annealing is after crystal pulling, and crystal bar head section starts after entering anneal chamber, and annealing insulation is held
Continuous 1~2h, and furnace cooling.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the monocrystaline silicon stove annealing device of the embodiment of the present invention.
Fig. 2 is the circuit connection diagram of the monocrystaline silicon stove annealing device of the embodiment of the present invention.
Fig. 3 is the schematic diagram of heater in Fig. 1.
Fig. 4 is the profile of heater in Fig. 1.
Embodiment
To enable objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the tool of the present invention
Body embodiment is described in detail.Some embodiments of the present invention are given in accompanying drawing.But the present invention can be with many not
With form realize, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is made to this
The disclosure of invention more thorough and comprehensive.
It should be noted that when element is referred to as " being fixedly arranged on " another element, it can be directly on another element
Or there may also be element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side ", " on ", " under " and similar statement is for illustrative purposes only, rather than instruction or the device or member that imply meaning
Part must have specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；It can be machine
Tool connects or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, can be two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.Term as used herein " and/or " include the arbitrary of one or more related Listed Items and
All combinations.
Refer to Fig. 1-4, a kind of monocrystaline silicon stove annealing device of the embodiment of the present invention, a kind of monocrystaline silicon stove annealing device,
For the main furnace chamber installed in production monocrystalline silicon, annealed with the monocrystalline silicon produced to the main furnace chamber, the monocrystaline silicon stove moves back
Fiery device includes secondary furnace chamber 5 and heater, and the secondary furnace chamber 5 is located at the top of the main furnace chamber 1, set inside the secondary furnace chamber 5
There is anneal chamber 10, be provided with heater 7 in the anneal chamber 10, the heater 7 includes heater chip module 2, and heater chip module 2 is
Annular, fixation being overlapped successively, forming cylindric, one group of the formation per several heater chip modules, several, which are organized, forms one
Complete heater 7, forms one group per several heater chip modules, shares a set of circuit, and every group of heater chip module is all compiled with PLC
Range controller 6 connects, and every group of heater chip module is individually controlled by PLC 6, although the peace of heater 7
Holding position installation fixes, but by individually controlling the break-make of every group of heater chip module, so as to indirectly realize to heating zone
The change in domain, further, it is also possible to the quantity of heater chip module be adjusted, so as to realize being accurately controlled for temperature, the heater
Include some heating plate groups including N-1 heater chip module (N ＞ 2, and be integer), the heating plate group includes some heating plates
Unit, the heater chip module are annular, are overlapped fixation successively, are formed cylindric.
In addition, thermocouple probe and PLC 6, PLC programming controls are transmitted to by the temperature information of anneal chamber 10 in real time
Device 6 processed so that PLC 6 can control heater 7 so that temperature is maintained in default scope.
Silica crucible and graphite crucible are provided with the main furnace chamber, silicon liquid, the graphite earthenware are held in the silica crucible
The top of crucible is provided with guide shell, and lower section is provided with graphite fore-set.
Air blower 9 and the one end of heater 7 are connected with same PLC 6, the other end respectively with the phase of power supply 13
Even, power supply 13 is connected with power switch 11, and power supply 1 is powered to air blower 9 and heater 7.
The present apparatus uses bottom inflatable mode, and air blower 9 is provided with by main furnace chamber solid liquid interface, logical by air blower 9
Enter argon gas, ensure airflow direction from down to up, while can prevent air-flow from bringing dust and Carbon fiber thermal insulation plate plate dust into silicon
In melt.
An anneal chamber 10 widened is set in secondary furnace chamber 5, the cavity top of anneal chamber 10 and periphery are provided with heat-insulation and heat-preservation
Plate 4, around cavity installation having heaters 7, while there is thermocouple probe 12 inside anneal chamber 10, carried out by thermocouple probe 12
Temperature feedback, controllable heater 7 compensate to temperature, ensure the temperature of anneal chamber 10 at 500-700 DEG C, annealing process is lasting
1~2h, heater power source, furnace cooling are disconnected after annealing.
During single crystal pulling, the head section of crystal bar 3 can slowly enter and rest on anneal chamber 10, the main furnace chamber 1 of cooling stage
Argon gas can carry out blowing cold, and drive the main heat of furnace chamber 1 to enter anneal chamber, while the heat compensation of heater 7, can provide good
Annealing heat source.
Burner hearth ensures that air-flow passes through anneal chamber from below to up using air blower air blowing is provided with main furnace chamber solid liquid interface, high
Warm furnace gas can provide thermal source for anneal chamber, reduce annealing energy consumption, while the main furnace chamber of cooling stage can be purged；
The surrounding of anneal chamber 10 and top are equipped with heat-insulated backplate 4, can preferably collect storage and rise heat, are also annealing
Chamber provides metastable thermal field；
Surrounding is equipped with heater 7 in anneal chamber, provides temperature-compensating for annealing region, Resistant heating power adjustable, protects
Cavity temperature stabilization is demonstrate,proved at 500-700 DEG C, actual temperature is fed back by thermocouple probe, and annealing process continues 1~2h, annealing
After disconnect heater power source, furnace cooling；
Monocrystalline body of heater uses main furnace chamber air inlet, the mode of secondary furnace chamber top vent in the present invention；
Heat insulating board 4 uses Carbon fiber thermal insulation plate in the present invention, and paving location is anneal chamber sidepiece and top；
The height distance of anneal chamber 10 main furnace chamber 1000mm~1500mm, 450~650mm of cavity longitudinal length；
Present invention can apply to different model single crystal growing furnace, the wide 400~800mm of the more secondary furnace chamber of anneal chamber transverse width, ensure
Inside can be with heat insulating board 4 and heater 7；
Present invention annealing is after crystal pulling, and crystal bar head section starts after entering anneal chamber, and annealing insulation continues 1~2h,
And furnace cooling；
The present invention proposes monocrystaline silicon stove annealing device, by the way that annealing device and single crystal growing furnace are combined, utilizes single crystal growing furnace
Waste heat is annealed, and is heated by using heater, by PLC, to control the region of heating, indirectly
Adjustment heating region is realized, so as to which according to the actual requirements, the size and length such as crystal bar are come Reasonable adjustment heating region, essence
Really control heating location and heat time, high-temperature furnace gas in single crystal growing furnace is made full use of, reduce energy consumption, improve silicon rod quality, phase
Than prior art, heating region can be preferably adjusted, and control quickly and precisely is more quickly realized to in-furnace temperature
System.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.Moreover, specific features, structure, material or the feature of description can be any
One or more embodiments or example in combine in an appropriate manner.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
- A kind of 1. monocrystaline silicon stove annealing device, for the main furnace chamber installed in production monocrystalline silicon, with what is produced to the main furnace chamber Monocrystalline silicon is annealed, it is characterised in that：The monocrystaline silicon stove annealing device includes secondary furnace chamber and heater, and the secondary furnace chamber is located at The top of the main furnace chamber, the secondary furnace chamber inside are provided with anneal chamber, heater, the heater bag are provided with the anneal chamber Some heating plate groups are included, the heating plate group includes some heater chip modules, and the heater chip module is annular, is folded successively It is fixed, forms cylindrical shape, is provided with thermocouple probe in the anneal chamber, described main furnace chamber side is provided with air blower, described Heater chip module described in thermocouple probe, the air blower and every group is all connected with PLC respectively.
- 2. monocrystaline silicon stove annealing device according to claim 1, it is characterised in that：The anneal chamber is located at the secondary furnace chamber Middle part.
- 3. monocrystaline silicon stove annealing device according to claim 1, it is characterised in that：The monocrystaline silicon stove annealing device uses Bottom inflatable mode, air blower is installed at the solid liquid interface of the main furnace chamber.
- 4. monocrystaline silicon stove annealing device according to claim 1, it is characterised in that：The surrounding of the anneal chamber and top dress There is heat insulating board.
- 5. monocrystaline silicon stove annealing device according to claim 1, it is characterised in that：Surrounding is equipped with described in the anneal chamber Heater.
- 6. monocrystaline silicon stove annealing device according to claim 4, it is characterised in that：The heat insulating board uses carbon fiber Warming plate, paving location are sidepiece and the top of the anneal chamber.
- 7. monocrystaline silicon stove annealing device according to claim 1, it is characterised in that：The transverse width of the anneal chamber is compared with institute State the wide 400~800mm of transverse width of secondary furnace chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710621465.2A CN107385514B (en) | 2017-07-27 | 2017-07-27 | Annealing device of monocrystalline silicon furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710621465.2A CN107385514B (en) | 2017-07-27 | 2017-07-27 | Annealing device of monocrystalline silicon furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107385514A true CN107385514A (en) | 2017-11-24 |
| CN107385514B CN107385514B (en) | 2023-11-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710621465.2A Active CN107385514B (en) | 2017-07-27 | 2017-07-27 | Annealing device of monocrystalline silicon furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108949509A (en) * | 2018-09-29 | 2018-12-07 | 深圳市艺盛科五金电子有限公司 | A kind of accurate temperature regulating device and method for probe anneals processing |
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| JPH10194898A (en) * | 1997-01-09 | 1998-07-28 | Japan Energy Corp | Manufacture of gallium-arsenic seed crystal |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
| CN201158722Y (en) * | 2008-01-30 | 2008-12-03 | 大庆佳昌科技有限公司 | Thermal field device for gallium arsenide crystal growth |
| CN201495105U (en) * | 2009-08-21 | 2010-06-02 | 南安市三晶阳光电力有限公司 | Ingot furnace heater capable of gradient temperature control |
| CN104726931A (en) * | 2015-03-30 | 2015-06-24 | 江苏盎华光伏工程技术研究中心有限公司 | Single crystal furnace with annealing device and control method for single crystal furnace |
| CN105887205A (en) * | 2016-06-27 | 2016-08-24 | 无锡宏纳科技有限公司 | High temperature furnace for diffusion |
-
2017
- 2017-07-27 CN CN201710621465.2A patent/CN107385514B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10194898A (en) * | 1997-01-09 | 1998-07-28 | Japan Energy Corp | Manufacture of gallium-arsenic seed crystal |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
| CN201158722Y (en) * | 2008-01-30 | 2008-12-03 | 大庆佳昌科技有限公司 | Thermal field device for gallium arsenide crystal growth |
| CN201495105U (en) * | 2009-08-21 | 2010-06-02 | 南安市三晶阳光电力有限公司 | Ingot furnace heater capable of gradient temperature control |
| CN104726931A (en) * | 2015-03-30 | 2015-06-24 | 江苏盎华光伏工程技术研究中心有限公司 | Single crystal furnace with annealing device and control method for single crystal furnace |
| CN105887205A (en) * | 2016-06-27 | 2016-08-24 | 无锡宏纳科技有限公司 | High temperature furnace for diffusion |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108949509A (en) * | 2018-09-29 | 2018-12-07 | 深圳市艺盛科五金电子有限公司 | A kind of accurate temperature regulating device and method for probe anneals processing |
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| Publication number | Publication date |
|---|---|
| CN107385514B (en) | 2023-11-28 |
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