CN107369720A - A kind of p-type diamond height barrier Schottky diode and preparation method thereof - Google Patents
A kind of p-type diamond height barrier Schottky diode and preparation method thereof Download PDFInfo
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- CN107369720A CN107369720A CN201710543596.3A CN201710543596A CN107369720A CN 107369720 A CN107369720 A CN 107369720A CN 201710543596 A CN201710543596 A CN 201710543596A CN 107369720 A CN107369720 A CN 107369720A
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- 239000010432 diamond Substances 0.000 title claims abstract description 124
- 230000004888 barrier function Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 15
- 239000011737 fluorine Substances 0.000 claims abstract description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 29
- 238000005516 engineering process Methods 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 210000002381 plasma Anatomy 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000011435 rock Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
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- 238000011161 development Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010036590 Premature baby Diseases 0.000 description 1
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- 239000002253 acid Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
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- 125000001153 fluoro group Chemical group F* 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
Abstract
The present invention discloses a kind of p-type diamond height barrier Schottky diode and preparation method thereof, including：Include diamond substrate；The one side of diamond substrate is provided with diamond epitaxial layer, and another side is provided with Ohm contact electrode；The surface of diamond epitaxial layer is formed with the convex beam microstructure alternate with raceway groove；The surface of convex beam forms aerobic terminal end surface；Oxygen terminal end surface is provided with low barrier schottky regional metal；Region in the microstructure of diamond epitaxial layer except convex beam surface is provided with fluorine terminal；The surface of low barrier schottky regional metal and fluorine terminal forms a floor height barrier schottky regional metal.Compared with prior art, by means of the invention it is possible to obtain while there is the Schottky diode that positive cut-in voltage is small, current density is big, reverse leakage current is small, breakdown voltage is high.
Description
Technical field
The invention belongs to diamond semiconductor electric and electronic technical field, is related to a kind of p-type diamond height potential barrier Xiao Te
Based diode and preparation method thereof.
Background technology
In recent years, as the high speed development of national economy, the demand of electric power energy are growing day by day.The generation of electric power energy,
Transport, consumption and during these electric power energy effective switch technology and control technology, have become save the energy and
Social sustainable development two takes into account the key technology that can not be owed.In the raising of electric power energy control technology and utilization ratio, rise and close
Key effect is exactly power electronic device and the electric power converter comprising power electronic device.One as power electronic device
Point, Schottky diode is that have a rectification characteristic and manufactured using metal and semiconductor contact formation Schottky barrier, is had
The advantages that forward voltage drop is low, switching speed is fast, it is suitable for high frequency, high current, high power etc.., in the application scenario of reality
Ask Schottky diode that there is small conducting resistance, greatly big current density, shut-off resistance and high disruptive field intensity.Together
When, in order to realize the miniaturization of electrical power conversion module and lightweight, it is necessary to which there is power electronic device speed-sensitive switch and high temperature to move
The characteristic of work, this just proposes very harsh requirement to device material.In the case, the diamond with good characteristic half
Conductor enters the visual field of scientist.Compared with the semiconductor such as Si, GaAs, SiC and GaN, diamond have high heat conductance,
The excellent characteristics such as high breakdown field strength, high mobility, low-k, the high power device factor, be research and development high temperature, high withstand voltage,
One of preferred material of super high power Schottky diode.
Diamond Schottky diode is developed in nineteen ninety front and rear development.Due to the synthesis of diamond at that time, device work
The also prematurity of skill, assessment technique, device performance quality are mainly used as judgment criteria using rectification characteristic.Device architecture mainly p-/
Developed on the basis of Si, p-/Ib, breakdown voltage only has 5-100V, and forward conduction current density only has 1A/cm2, performance is low
Under.By the development of many decades, monocrystalline diamond film growth technique is greatly improved, diamond Schottky diode
Structure is also optimized so that device performance is significantly lifted.French scientist A.Traor é et al. realize disruptive field intensity
About 7.7MV/cm, breakdown voltage are more than 1000V, forward current density about 1000A/cm2Power SBD.
Industry improves the electricity of Schottky diode spy using device architectures such as field plate structure and lithographic techniques more at present
Property.Concretely comprise the following steps using the Electric Field Distribution of aluminum oxide, silica as dielectric layer improvement Schottky diode, carried with this
The breakdown voltage of high Schottky diode.But such a method has no idea to take into account that positive cut-in voltage is small, current density simultaneously
Greatly, the electrology characteristic that reverse leakage current is small, breakdown voltage is high.It is well known that Xiao Te prepared by low barrier schottky contacting metal
Based diode makes to can obtain larger forward current applying less forward bias voltage, and if when continuing to increase reverse biased
Also larger reverse leakage current can be produced；Schottky diode prepared by high barrier schottky contacting metal is larger just in application
To larger forward current could be produced during bias voltage, therefore, such a Schottky diode have reverse leakage current it is smaller and
The big electrology characteristic of breakdown voltage.Diamond Schottky diode is prepared with reference to height potential barrier, then can take into account both advantages, obtain
Obtain the Schottky diode that positive cut-in voltage is small, current density is big, reverse leakage current is small, breakdown voltage is high.
The content of the invention
It is an object of the invention to provide a kind of p-type diamond height barrier Schottky diode and preparation method thereof, gram
Take the contradiction between conventional schottky forward direction cut-in voltage and forward current density and reverse leakage current and breakdown voltage
Problem；The present invention utilizes the Schottky contact barrier height difference that metal is formed in two kinds of surface terminations of diamond so as to form height
Low barrier Schottky diode.Under forward bias voltage, low barrier schottky contact area preferentially turns on, can now obtain compared with
Small forward bias voltage and larger forward current density, under reverse bias voltage, high barrier schottky contact area shape
Into the low barrier schottky of electric field line pinch off contact the electric field line to be formed, therefore leakage current is big compared with small and breakdown voltage.This side
It is excellent that the Schottky diode that method obtains has that positive cut-in voltage is small, current density is big, reverse leakage current is small, breakdown voltage is high
Point.
To achieve these goals, the present invention adopts the following technical scheme that：
A kind of p-type diamond height barrier Schottky diode, including：Include diamond substrate；The one of diamond substrate
Face is provided with diamond epitaxial layer, and another side is provided with Ohm contact electrode；The surface of diamond epitaxial layer is formed with convex beam and raceway groove
Alternate microstructure；The surface of convex beam is formed with first terminal surface；First terminal surface is provided with low barrier schottky area
Domain metal；Region in the microstructure of diamond epitaxial layer except convex beam surface is provided with second terminal；Low barrier schottky region
The surface of metal and second terminal forms a floor height barrier schottky regional metal；High barrier schottky regional metal and diamond
The contact berrier ratio and diamond convex beam upper surface first terminal surface that the raceway groove second terminal surface of substrate is formed form contact
Potential barrier will height.
Further, the diamond substrate is p-type diamond.
Further, first terminal is oxygen terminal；Second terminal is fluorine terminal.
A kind of preparation method of p-type diamond height barrier Schottky diode, including：
(1) p-type diamond substrate is cleaned up, and in one layer of diamond epitaxial layer of its superficial growth；
(2) on diamond epitaxial layer, strip-shaped channel is etched, forms the periodicity raceway groove microcosmic knot alternate with convex beam
Structure；
(3) Ohm contact electrode is made at the p-type diamond substrate back side；
(4) by the diamond epitaxial layer of the microstructure alternate with convex beam with periodicity raceway groove obtained in step (2)
It is surface-treated using reactive ion etching technology, convex beam upper surface is processed into a kind of surface termination；
(5) the diamond extension aspect obtained in step (4) is utilized into photoetching technique, and combines electron beam evaporation or magnetic
Sputtering method is controlled in the upper surface deposited metal of convex beam, forms low barrier schottky regional metal；
(6) by the raceway groove part of the periodicity raceway groove obtained in step (5) the microstructure alternate with convex beam, use again
The method of reactive ion etching utilizes different gaseous plasmas, and diamond surface is processed into another surface termination；
(7) diamond obtained in step (6) is plated into the metal in step (5) again, forms high barrier schottky area
Domain metal, complete the preparation of p-type diamond height barrier Schottky diode；High barrier schottky regional metal and step (6)
In diamond channel surface terminal formed contact berrier ratio and step (5) in surface termination contact berrier it is high.
Further, MPCVD methods are used to grow a layer thickness in p-type diamond substrate as 0.5-60 in step (1)
The diamond epitaxial layer of micron.
Further, the channel depth that dry etching goes out is used as 0.2-10 microns in step (2), the depth is less than gold
Hard rock epitaxy layer thickness.
Further, using the convex beam upper table of oxygen gas plasma processing diamond raceway groove microstructure in step (4)
Face, form oxygen terminal.
Further, the metal of evaporation or sputtering method deposition is used in step (5) as gold, palladium or copper.
Further, diamond microstructure convex beam upper table is removed using carbon tetrafluoride corona treatment in step (6)
Surface beyond face, form fluorine terminal.
Further, the plasma in step (4) and (6) reactive ion etching is used as carbon tetrafluoride, oxygen and chlorine
Any of gas.
Further, the terminal coverage rate obtained in step (4) and (6) is used as 10%-100%.
The present invention compared with prior art, has advantages below：
1st, the principle contacted by application same metal with different diamond surface terminal formation height barrier schottkies,
Prepare diamond height barrier Schottky diode.Under forward voltage, the low preferential conducting of barrier schottky contact, reverse
Under bias, high barrier schottky contacts the low barrier schottky contact of pinch off, suppresses leakage current.Forward direction can be obtained using this method
The Schottky diode that cut-in voltage is small, current density is big, reverse leakage current is small, breakdown voltage is high.
2nd, this method selects different plasmas and gas flow to join by selecting Plasma-Modified diamond surface
It number, can more accurately regulate and control the coverage rate of surface termination, the electrology characteristic of Schottky diode is regulated and controled with this.
3rd, this method can prepare the diamond surface of different terminals, be connect according to metal with what different terminals coverage rate obtained
It is different to touch barrier height, is had great application prospect in Schottky diode constant power person in electronics.
Brief description of the drawings
Fig. 1 is diamond height barrier Schottky diode forward direction fundamental diagram；
Fig. 2 is diamond height barrier Schottky diode reverse operation schematic diagram；
Fig. 3 is the structural representation of diamond height barrier Schottky diode；
Fig. 4-1 to Fig. 4-8 is the preparation method flow chart of diamond height barrier Schottky diode of the present invention.
Embodiment
With reference to the accompanying drawings and detailed description to the detailed description of the invention.
Refer to shown in Fig. 3, a kind of p-type diamond height barrier Schottky diode of the present invention, include diamond substrate
1st, diamond epitaxial layer 2, convex beam 3, raceway groove 4, Ohm contact electrode 5, oxygen terminal end surface 6, low barrier schottky regional metal 7,
Fluorine terminal end surface 8 and high barrier schottky regional metal 9.
The one side of diamond substrate 1 is provided with diamond epitaxial layer 2, and another side is provided with Ohm contact electrode 5；Diamond extension
The surface of layer 2 is formed with the microstructure alternate with raceway groove 4 of convex beam 3；The surface of convex beam 3 forms aerobic terminal end surface 6；Oxygen terminal
Surface 6 is provided with low barrier schottky regional metal 7；Region in the microstructure of diamond epitaxial layer 2 except the surface of convex beam 3 is set
There is fluorine terminal 8；The surface of low barrier schottky regional metal 7 and fluorine terminal 8 forms a floor height barrier schottky regional metal 9.
Low barrier schottky regional metal 7 and diamond surface can form the highly relatively low Schottky contacts of contact berrier；
The contact berrier ratio and diamond convex beam upper surface that high barrier schottky regional metal 9 and diamond raceway groove fluorine terminal end surface is formed
Oxygen terminal end surface forms contact berrier will height.
Refering to Fig. 4-1 to Fig. 4-8, present invention also offers a kind of system of p-type diamond height barrier Schottky diode
Preparation Method, including step once：
(1) soda acid processing is carried out to p-type diamond substrate 1, acetone, alcohol, deionized water are cleaned up, blown with nitrogen
It is dry, as shown in Fig. 4-1；
(2) using the method for microwave plasma CVD in p-type diamond substrate 1 superficial growth, one layer of Buddha's warrior attendant
Stone epitaxial layer 2, as shown in the Fig. 4-2；
(3) on diamond epitaxial layer 2, by the use of metal as mask, strip groove is etched using the method for dry etching
Road, 4 microstructure alternate with convex beam 3 of periodicity raceway groove is formed, as shown in Fig. 4-3；
(4) Ohm contact electrode 5 is made at the back side of p-type diamond substrate 1, as shown in Fig. 4-4；
(5) microstructure alternate with convex beam 3 with periodicity raceway groove 4 obtained in step (3) is used into reactive ion
The upper surface of convex beam 3 is processed into oxygen terminal 6 by etching (Reactive Ion Etching, RIE) technology using oxygen gas plasma,
As illustrated in figures 4-5；
(6) the extension aspect obtained in step (5) is utilized into photoetching technique, and combines electron beam evaporation (Electron
Beam Evaporation) or magnetron sputtering (Magnetron Sputtering) method convex beam 3 upper surface deposit gold
Category, forms low barrier schottky regional metal 7, and the metal and diamond surface can form the highly relatively low Xiao Te of contact berrier
Base contacts, as Figure 4-Figure 6；
(7) by the raceway groove part of the periodicity raceway groove 4 obtained in step (6) the microstructure alternate with convex beam 3, adopt again
Carbon tetrafluoride gas plasma is utilized with the method for reactive ion etching, the diamond surface being exposed is processed into fluorine end
End 8, as shown in figs. 4-7；
(8) diamond obtained in step (7) is plated into the metal in step (6) again, forms high barrier schottky area
Domain metal 9；The contact berrier ratio and diamond convex beam upper surface oxygen terminal that the metal and diamond raceway groove fluorine terminal end surface are formed
Surface forms contact berrier will height.Now, p-type diamond height barrier Schottky diode makes and finished, as Figure 4-8.
All examples are implemented under premised on technical solution of the present invention below, but protection scope of the present invention
It is not limited to following examples.
Embodiment 1：
(1) wash technique using the acid-base property of standard to clean diamond substrate 1, remove the non-diamond phase on surface,
Then diamond substrate 1 is cleaned using acetone, alcohol, deionized water, and uses nitrogen drying diamond substrate 1.
(2) 0.5-60 microns thickness is grown in diamond substrate 1 using microwave plasma CVD technology
Epitaxial layer 2.
(3) raceway groove for needing to etch is exposed to do mask using metal using photoetching technique and magnetron sputtering technique
Place of the masking without etching.
(4) the diamond epitaxial layer obtained step (3) using dry etching, convex beam 3 is obtained after etching and raceway groove 4 is alternate
Microstructure, wherein channel depth is 0.2-10 microns.
(5) the diamond epitaxial layer back side is obtained in step (4) and makes Ohm contact electrode 5.
(6) place of the diamond epitaxial layer in step (5) in addition to convex beam 3 is blocked with photoresist using photoetching technique
Get up, using reactive ion etching technology, convex beam upper surface is processed into oxygen terminal 6 using oxygen gas plasma.
(7) the diamond epitaxial layer convex beam upper surface deposited metal obtained by the way of electron beam evaporation in step (6)
Form low barrier schottky contact.
(8) reactive ion etching technology is used again, convex beam upper table will be removed in step (7) using carbon tetrafluoride plasma
Regional processing beyond face is into fluorine terminal end surface 8.
(9) the diamond epitaxial layer obtained in step (8) is made by lithography high barrier schottky hookup using photoetching technique
Shape, by the way of electron beam evaporation again in deposition step (7) deposition metal.
(10) diamond height barrier Schottky diode is prepared and finished.
Embodiment 2
(1) wash technique using the acid-base property of standard to clean diamond substrate 1, remove the non-diamond phase on surface,
Then diamond substrate 1 is cleaned using acetone, alcohol, deionized water, and uses nitrogen drying diamond substrate 1.
(2) 0.5-60 microns thickness is grown in diamond substrate 1 using microwave plasma CVD technology
Epitaxial layer 2.
(3) the diamond epitaxial layer back side is obtained in step (2) and makes Ohm contact electrode 5.
(4) raceway groove for needing to etch is exposed come the place without etching using photoetching technique and magnetron sputtering technique
Mask is done using metal.
(5) the diamond epitaxial layer in dry etching technology etch step (4) is used, convex beam 3 is etched and raceway groove 4 is alternate
Microstructure, wherein channel depth is 0.2-10 microns.
(6) the diamond epitaxial layer in reactive ion etching technology etch step (5) is used, will using oxygen gas plasma
Diamond surface is processed into oxygen terminal 6.
(7) the diamond epitaxial layer convex beam upper surface deposited metal obtained by the way of electron beam evaporation in step (6)
Form low barrier schottky contact.
(8) reactive ion etching technology is used again, using carbon tetrafluoride plasma by outside the diamond in step (7)
Prolong regional processing of the layer in addition to convex beam upper surface into fluorine terminal end surface 8.
(9) the diamond epitaxial layer obtained in step (8) is made by lithography high barrier schottky hookup using photoetching technique
Shape, by the way of electron beam evaporation again in deposition step (7) deposition metal.
(10) diamond height barrier Schottky diode is prepared and finished.
The foregoing is only the present invention better embodiment, protection scope of the present invention not using above-mentioned embodiment as
Limit, as long as equivalent modification that those of ordinary skill in the art are made according to disclosed content or change, should all include power
In protection domain described in sharp claim.
Claims (10)
- A kind of 1. p-type diamond height barrier Schottky diode, it is characterised in that including：Include diamond substrate (1)；The one side of diamond substrate (1) is provided with diamond epitaxial layer (2), and another side is provided with Ohm contact electrode (5)；The surface of diamond epitaxial layer (2) is formed with convex beam (3) and the alternate microstructure of raceway groove (4)；The surface of convex beam (3) is formed with first terminal surface；First oxygen terminal end surface is provided with low barrier schottky regional metal (7)；Region in the microstructure of diamond epitaxial layer (2) except convex beam (3) surface is provided with second terminal；The surface of low barrier schottky regional metal (7) and the second fluorine terminal forms a floor height barrier schottky regional metal (9).
- A kind of 2. p-type diamond height barrier Schottky diode according to claim 1, it is characterised in that high potential barrier The contact berrier ratio and diamond that the raceway groove second terminal surface of schottky area metal (9) and diamond substrate (1) is formed are convex Beam upper surface first terminal surface forms contact berrier will height.
- A kind of 3. p-type diamond height barrier Schottky diode according to claim 1, it is characterised in that the gold Hard rock substrate (1) is p-type diamond.
- 4. a kind of p-type diamond height barrier Schottky diode according to claim 1, it is characterised in that first eventually Hold as oxygen terminal；Second terminal is fluorine terminal.
- A kind of 5. preparation method of p-type diamond height barrier Schottky diode, it is characterised in that including：(1) p-type diamond substrate is cleaned up, and in one layer of diamond epitaxial layer of its superficial growth；(2) on diamond epitaxial layer, strip-shaped channel is etched, forms the periodicity raceway groove microstructure alternate with convex beam；(3) Ohm contact electrode is made at the p-type diamond substrate back side；(4) the diamond epitaxial layer of the microstructure alternate with convex beam with periodicity raceway groove obtained in step (2) is used Reactive ion etching technology is surface-treated, and convex beam upper surface is processed into a kind of surface termination；(5) the diamond extension aspect obtained in step (4) is utilized into photoetching technique, and combination electron beam evaporation or magnetic control splash Shooting method forms low barrier schottky regional metal in the upper surface deposited metal of convex beam；(6) by the raceway groove part of the periodicity raceway groove obtained in step (5) the microstructure alternate with convex beam, reaction is used again The method of ion etching utilizes different gaseous plasmas, and diamond surface is processed into another surface termination；(7) diamond obtained in step (6) is plated into the metal in step (5) again, forms high barrier schottky region gold Category, complete the preparation of p-type diamond height barrier Schottky diode；In high barrier schottky regional metal and step (6) The contact berrier of surface termination is high in contact berrier ratio and step (5) that diamond channel surface terminal is formed.
- 6. preparation method according to claim 5, it is characterised in that in step (1) using MPCVD methods in p-type Buddha's warrior attendant Stone lining bottom growth goes out the diamond epitaxial layer that a layer thickness is 0.5-60 microns.
- 7. preparation method according to claim 5, it is characterised in that the raceway groove gone out in step (2) using dry etching Depth is 0.2-10 microns, and the depth is less than diamond epitaxy layer thickness.
- 8. preparation method according to claim 5, it is characterised in that handled in step (4) using oxygen gas plasma The convex beam upper surface of diamond raceway groove microstructure, form oxygen terminal.
- 9. preparation method according to claim 5, it is characterised in that using evaporation or sputtering method in step (5) The metal of deposition is gold, palladium or copper.
- 10. preparation method according to claim 5, it is characterised in that carbon tetrafluoride plasma is used in step (6) The surface in addition to diamond microstructure convex beam upper surface is handled, forms fluorine terminal.
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| CN111129166A (en) * | 2019-12-13 | 2020-05-08 | 中国科学技术大学 | Gallium oxide-based semiconductor structure and preparation method thereof |
| CN112400237A (en) * | 2018-07-09 | 2021-02-23 | 威斯康星州男校友研究基金会 | P-N diode and P-N-P heterojunction bipolar transistor with diamond collector and current tunneling layer |
| CN112563317A (en) * | 2019-09-26 | 2021-03-26 | 东南大学 | Gallium nitride power device and manufacturing method thereof |
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| CN113990965B (en) * | 2021-10-22 | 2023-12-19 | 东南大学 | Semiconductor device mixed with graphene electrode and manufacturing method thereof |
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