CN107340063B - Thermal detector and preparation method thereof - Google Patents
Thermal detector and preparation method thereof Download PDFInfo
- Publication number
- CN107340063B CN107340063B CN201710488564.8A CN201710488564A CN107340063B CN 107340063 B CN107340063 B CN 107340063B CN 201710488564 A CN201710488564 A CN 201710488564A CN 107340063 B CN107340063 B CN 107340063B
- Authority
- CN
- China
- Prior art keywords
- layer
- infrared light
- narrow
- intermediate product
- band spectrum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000001228 spectrum Methods 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000013067 intermediate product Substances 0.000 claims description 39
- 230000010287 polarization Effects 0.000 claims description 38
- 230000003595 spectral effect Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000005057 refrigeration Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 description 12
- 238000000862 absorption spectrum Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a heat detector and a preparation method thereof, the heat detector comprises a micro-structure array, a dielectric layer, a metal layer, a passivation layer and a thermistor layer which are sequentially arranged from top to bottom, the micro-structure array structure screens incident light and absorbs infrared light with narrow-band spectrum, the infrared light with narrow-band spectrum resonates in a resonant cavity, the infrared light with narrow-band spectrum is converted into a heat signal with intensity of the infrared light with narrow-band spectrum through the metal layer, the thermistor layer converts the heat signal with intensity of the infrared light with narrow-band spectrum into a resistance signal with intensity of the infrared light with narrow-band spectrum, and the infrared light intensity information of the narrow-band spectrum is obtained by demodulating resistance value information of the intensity information of the infrared light with narrow-band spectrum.
Description
Technical Field
The invention belongs to the technical field of uncooled infrared detection, and particularly relates to a heat detector and a preparation method thereof.
Background
The thermal detector essentially senses the intensity information of the electromagnetic radiation of the target object by converting the temperature difference caused by the object into an electrical signal and acquiring the information thereof. According to different detection principles, non-refrigeration detectors are classified into pyroelectric detectors, thermocouple detectors, thermistor detectors, and the like. The microbolometer detector based on the thermistor material has the advantages of room temperature detection, high integration level, large-scale production, low price and the like.
However, thermal detectors are not sensitive to wavelength information and polarization information of electromagnetic fields at the pixel level, thus resulting in the detector's reliance on discrete optical elements such as filters and polarizers.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a thermal detector and a preparation method thereof, aiming at solving the technical problem that the infrared intensity information detected by the existing thermal detector is the infrared intensity information containing a plurality of polarization forms in a wider spectral range and the infrared intensity detection in a narrow spectral range cannot be realized (the problem solved in claim 1 is that the infrared detection in the narrow spectral range cannot be realized) because the existing thermal detector cannot screen infrared light.
To achieve the above object, the present invention provides a heat detector including:
the optical resonant cavity comprises a microstructure array, a dielectric layer, a metal layer, a passivation layer and a thermistor layer which are sequentially arranged from top to bottom, wherein the microstructure array, the dielectric layer and the metal layer form an optical resonant cavity (the supporting layer is not used as a necessary technical characteristic for solving the problem that narrow-band spectrum detection cannot be realized);
the microstructure array is used for carrying out wavelength screening on incident infrared light and absorbing the infrared light with a narrow-band spectrum; the metal layer is used for converting the infrared light with the narrow-band spectrum into a thermal signal carrying intensity information of the infrared light with the narrow-band spectrum;
the passivation layer is used for realizing the electrical isolation of the metal layer and the thermistor layer;
the thermistor layer is used for converting a heat signal carrying the intensity information of the infrared light with the narrow-band spectrum into resistance value information carrying the intensity information of the infrared light with the narrow-band spectrum;
the infrared light intensity information of the narrow-band spectrum is obtained by demodulating resistance value information of the intensity information of the infrared light carrying the narrow-band spectrum, and the infrared light of the narrow-band spectrum refers to the spectrum range within hundreds of nanometers.
Preferably, the microstructure array is a plurality of cylinders arranged in an array or a plurality of double-trapezoid structures arranged in an array.
Preferably, the microstructure array simultaneously polarizes incident infrared light and absorbs infrared light having a selected polarization in a narrow band spectrum.
Preferably, the microstructure array is a plurality of strip-shaped structures arranged in an array.
Preferably, the heat detector further comprises a supporting layer, which is in a structure like a Chinese character 'ji', is located below the thermistor layer, and is used for separating the thermistor layer from the heat detector mounting structure, preventing the heat energy signal from losing, and simultaneously playing a supporting role.
Another object of the present invention is to provide a method for manufacturing a thermal detector, which includes the following steps:
s1 attaching a thermistor layer on a first substrate to obtain a first intermediate product;
s2 attaching a passivation layer on the thermistor layer of the first intermediate product to obtain a second intermediate product;
s2, attaching a metal layer on the passivation layer of the second intermediate product to obtain a third intermediate product;
s3, attaching a dielectric layer on the metal layer of the third intermediate product to obtain a fourth intermediate product;
s4, forming a photoresist layer with a microstructure array inverse structure on the dielectric layer of the fourth intermediate product, and attaching a metal layer on the photoresist layer to obtain a fifth intermediate product;
and S6, removing the photoresist from the fifth intermediate product by a wet chemical method to obtain the heat detector.
Preferably, obtaining the first substrate comprises the steps of:
s11, attaching photoresist on the second substrate to form a sacrificial layer, and obtaining a sixth intermediate product;
s12 attaching a support layer on the sixth intermediate product, a first substrate is obtained.
Preferably, the metal layer is attached by electron beam evaporation in steps S3 and S5.
Preferably, step S2 is to attach the first passivation layer by chemical vapor deposition.
Preferably, step S4 is to attach a dielectric layer by chemical vapor deposition.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. according to the heat detector provided by the invention, the incident infrared light is subjected to wavelength screening by the microstructure array and is absorbed by the narrow spectral range infrared light, the spectral range is hundreds of nanometers, the microstructure array, the dielectric layer and the metal layer form a resonant cavity, the narrow spectral range infrared light resonates in the dielectric layer and is absorbed and converted into a heat signal by the metal layer, the heat signal is transmitted to the thermistor and is converted into a resistance signal by the thermistor, the light intensity information of the narrow spectral range infrared light can be obtained by measuring the resistance signal, and further the capability of the heat detector for measuring the infrared light intensity in the narrow spectral range can be realized.
2. The cylindrical microstructure array adopted by the invention has the response characteristic irrelevant to polarization, can realize wide-angle response to incident infrared light, and can easily realize the absorption of the infrared light in a narrow spectrum range by taking a specific wavelength as a center wavelength through adjusting the size parameter of the cylindrical structure so as to obtain the infrared light intensity information in the narrow spectrum range.
3. The double-trapezoid micro-structure array adopted by the invention has the response characteristic of irrelevant polarization, meanwhile, the infrared light absorption with specific wavelength as the center and a wider spectral range can be realized by adjusting the size parameter of the double-trapezoid micro-structure, the infrared light intensity information with the wider spectral range is obtained, and the spectral width of the infrared light with the wider spectral range obtained by the double-trapezoid micro-structure array is larger than that of the infrared light with the narrow spectral range obtained by the cylindrical micro-structure array and still within hundreds of nanometers.
4. According to the heat detector provided by the invention, the microstructure array screens the wavelength and the polarization form of incident infrared light and absorbs the infrared light in the polarization form screened in a narrow spectral range, the infrared light in the polarization form screened in the narrow spectral range is converted into a heat signal and then into a resistance signal, and the intensity information of the infrared light in the polarization form screened in the narrow spectral range can be obtained by measuring the resistance signal.
5. The strip-shaped microstructure array adopted by the invention has polarization-related response characteristics, and meanwhile, the polarization-related selective absorption of infrared light with specific wavelength can be realized by adjusting the size parameters of the strip-shaped structure, so that the intensity information of the infrared light with specific wavelength and specific polarization form can be obtained.
6. The defects in the prior art can be overcome, the process difficulty is reduced, the extraction of wavelength information and polarization information is realized, the limitation that the traditional heat detector only responds to the intensity information of the wide-spectrum electromagnetic wave is broken through, and the comprehensive performance of the device is obviously improved; in the aspect of preparation process, the requirement on equipment is low, the film forming process is simple, and the large-scale production is facilitated.
Drawings
FIG. 1 is a cross-sectional view of a thermal detector in accordance with the present invention;
FIG. 2 is a three-dimensional block diagram of a thermal detector in accordance with the present invention;
FIG. 3 is a schematic diagram of a cylindrical microstructure array in a first embodiment of a thermal detector according to the present invention;
FIG. 4 shows absorption spectra of three cylindrical microstructure array structure parameters in a first embodiment of a thermal detector according to the present invention;
FIG. 5 is a schematic diagram of a double trapezoidal microstructure array in a second embodiment of the thermal detector according to the present invention;
FIG. 6 is an absorption spectrum of a second embodiment of the proposed thermal detector;
FIG. 7 is a schematic view of a bar-shaped microstructure array in a third embodiment of a thermal detector according to the present invention;
fig. 8 shows the polarization absorption spectrum of the third embodiment of the thermal detector according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 1 is a sectional view of a thermal detector according to the present invention, and fig. 2 is a three-dimensional structural view of the thermal detector according to the present invention, wherein the thermal detector includes a microstructure array 1, a dielectric layer 2, a metal layer 3, a first passivation layer 405, an electrode layer 404, a thermistor layer 403, a support layer 402, and a second passivation layer 401. The micro-structure array 1, the dielectric layer 2 and the metal layer 3 are sequentially arranged in a contact manner from top to bottom, a resonant cavity is formed by the micro-column array structure 1, the dielectric layer 2 and the metal layer 3, the micro-structure array 1 is a plurality of columns which are arranged in an array manner, and the micro-structure array 1 is used for carrying out wavelength screening on incident infrared light and absorbing the infrared light with narrow-band spectrum. The infrared light with the narrow-band spectrum generates resonance in the dielectric layer 2 to generate a current signal, and the metal layer 3 converts the infrared light with the narrow-band spectrum into a thermal signal carrying intensity information of the infrared light with the narrow-band spectrum.
The first passivation layer 405 is located below the metal layer 3, and the first passivation layer 405 protects the electrode layer 404 and the thermistor layer 403 and has an effect of electrically isolating the metal layer 3 and the thermistor layer 403. The electrode layer 404 is two strip conductors, the electrode layer 404 is located between the first passivation layer 405 and the thermistor layer 403, and the electrode layer is used for connecting with an external circuit. The support layer 402 is located below the thermistor 403, the support layer 402 having a bridge shape.
The thermal signal carrying the intensity information of the infrared light of the narrow-band spectrum is transmitted to the thermistor layer through the first passivation layer 405, the thermistor layer is used for converting the thermal signal carrying the intensity information into resistance information carrying the intensity information, the resistance information of the thermal detector is obtained by connecting the electrode layer 404 with an external circuit, the resistance information in the thermal detector carries the intensity information of the infrared light of the narrow-band spectrum, and the infrared light intensity information of the narrow-band spectrum is obtained by demodulating the resistance information of the thermal detector. The support layer separates the thermistor layer 403 from the structure for mounting the thermistor detector, thereby preventing heat from being transmitted through the mounting structure to affect the measurement accuracy, and improving the sensitivity of the thermistor detector.
Fig. 3 is a schematic structural diagram of a cylindrical microstructure array in a first embodiment of the thermal detector provided by the present invention, the cylindrical microstructure array is a plurality of cylinders arranged in an array, the materials of the fixed metal layer 3 and the microstructure array 1 are both gold, the area of the fixed metal layer 3, the fixed dielectric layer 2 is a silica thin film with a thickness of 80nm, the diameter D of the cylinder and the distance P between two adjacent cylinders are changed, wherein the diameter D of the cylinder and the distance P between two adjacent cylinders are three combinations, the combination 1: d720 nm, P2 um, combination 2: d940 nm, P2 um, combination 3: d-1290 nm and P-2 um. FIG. 4 is an absorption spectrum of a thermal detector under three cylindrical microstructure array structure parameters provided by the present invention; wherein curve 1 is the absorption spectrum of the thermal detector under combination 1, curve 2 is the absorption spectrum of the thermal detector under combination 2, curve 3 is the absorption spectrum of the thermal detector under combination 3, and curve 2 shows that the thermal detector under combination 2 obtains an absorption rate as high as 95% near 4.26 um. If the size of the cylindrical structure is changed from D940 nm, P2 um to D1290 nm, P2 um, the central response wavelength of the thermal detector will be shifted from 3.27um (curve 2) to around 4.26um (curve 3) and 1um to the long wavelength. Conversely, if the size of the cylinder is reduced, the thermal detector response wavelength will shift toward shorter wavelengths. When the size of the cylindrical structure is changed from D940 nm, P2 um to D720 nm, P2 um, the central response wavelength of the thermal detector is shifted from 3.27um (curve 2) to near 2.64um (curve 1) and shifted to short wavelength by 0.6 um. The widths of the absorption peaks of curves 1, 2 and 3 are all within a few hundred nanometers.
The results of fig. 4 show that the response wavelength of the thermal detector can be changed by changing the structural size of the cylindrical microstructure, the diameter of the cylinder is increased, the response center wavelength is moved to a long wavelength, the diameter of the cylinder is reduced, and the response center wavelength is moved to a short wavelength. According to the law, the thermal detector with high absorption rate in the narrow-spectrum infrared bands with different central wavelengths can be designed according to actual needs, and meanwhile, the cylindrical structure has high symmetry, is insensitive to polarization of incident light and can realize detection of infrared intensity in the narrow-spectrum range.
Fig. 5 is a double-trapezoid microstructure array in a second embodiment of the thermal detector provided by the present invention, where the double-trapezoid microstructure array is a plurality of double-trapezoid structures arranged in an array, each of the double-trapezoid structures is composed of two orthogonal trapezoid structures, and the centers of the two trapezoid structures are overlapped, and each trapezoid structure generates an absorption peak, and two adjacent absorption peaks are coupled by adjusting the upper edge, the lower edge, and the height of the trapezoid structure and the interval between the two double-trapezoid structures to generate an absorption peak, and the width of the absorption peak is within several hundred nanometers. Meanwhile, the double-trapezoid structure is formed by combining two orthogonal trapezoid structures, has certain symmetry and is insensitive to polarization of incident light.
In a second embodiment of the heat detector provided by the invention, the metal layer and the microstructure array are both selected from aluminum, and the thicknesses of the metal layer and the microstructure array are both 100 nm. The dielectric layer material is amorphous silicon, the thickness is 60nm, the short side D1 of the trapezoid structure is 990nm, the long side D2 of the trapezoid structure is 110nm, the height H of the trapezoid structure is 1100nm, and the distance P between the trapezoid structures is 1150 nm. Fig. 6 shows an absorption spectrum of a second embodiment of the thermal detector, and as can be seen from fig. 6, the thermal detector with the double-trapezoid microstructure array structure can achieve polarization-independent absorption of a wider spectrum in a specified wavelength range, thereby obtaining detection of infrared intensity in a wider spectral range, and the spectral width of infrared light in the wider spectral range is still within several hundred nanometers.
In the heat detector provided by the invention, the microstructure array not only screens the wavelength of incident infrared light, but also screens the polarization form of the incident infrared light, and absorbs the infrared light in the polarization form screened in a narrow spectral range, the infrared light in the polarization form screened in the narrow spectral range resonates in the medium layer and is converted into a heat signal carrying the intensity information of the infrared light in the polarization form screened in the narrow spectral range through the metal layer, and the thermistor layer is used for converting the heat signal carrying the intensity information of the infrared light in the polarization form screened in the narrow spectral range into a resistance signal carrying the intensity information of the infrared light in the polarization form screened in the narrow spectral range; and obtaining the intensity information of the infrared light in the polarization form screened under the narrow spectral range of the narrow-band spectrum by demodulating the resistance value information of the thermal detector.
Fig. 7 is a schematic diagram of a strip-shaped microstructure array in a third embodiment of the thermal detector provided by the present invention, where the strip-shaped microstructure array is a plurality of columns with rectangular cross sections arranged in an array, and due to a non-rotational symmetric structure of the strip-shaped microstructure array, the strip-shaped microstructure array is sensitive to the polarization form of incident light, and when the polarization state of the incident light changes, the response of the thermal detector with the strip-shaped microstructure array will change significantly, and the strip-shaped microstructure array 1 performs polarization form and wavelength screening on incident laser light and absorbs infrared light in the polarization form screened under a narrow spectral range.
In a third embodiment of the thermal detector, the metal layer and the microstructure array are made of gold, the dielectric layer is made of silicon dioxide, the thickness of the dielectric layer is 340nm, the width of the cross section in the strip-shaped microstructure array is 0.7um, and the distance P between two columns is 3.3 um.
FIG. 8 is a polarization dependent selective absorption spectrum of a third embodiment of a thermal detector, where curve 1 shows the response of the thermal detector when the incident light is TM polarized (the electric field direction is perpendicular to the long side), and curve 2 shows the response of the thermal detector when the incident light is TE polarized (the electric field direction is parallel to the long side); comparing the absorptance at 5um for curves 1 and 2, the absorptance of a thermal detector with an array of bar-shaped microstructures is 24 times the absorptance of TE polarization for TM polarization. Curve 1 shows that the thermal detector with the array of bar-shaped microstructures has a high absorption of TM polarized incident infrared light. By adjusting the width D of the cross section of the strip-shaped microstructure array and the pitch P of the columns, polarization selective absorption can be realized at a specified wavelength, and infrared light intensity measurement in a polarization mode screened in a narrow spectral range is realized.
The first embodiment of the method for manufacturing the heat detector provided by the invention comprises the following steps:
s1, cleaning the silicon wafer 6, drying by blowing, and growing a layer of Si by using plasma enhanced chemical vapor deposition equipment3N4The thickness is 100-200nm, and the second passivation layer 401 is used to obtain a second substrate;
spinning a layer of polyimide photoresist 5 with the thickness of 1-3um on a second passivation layer 401 of a second substrate, carrying out photoetching treatment to enable the polyimide photoresist to be in a shape of a Chinese character 'ji', and then carrying out thermosetting treatment to form a sacrificial layer to obtain a seventh intermediate product;
plasma enhancement of the surface of the sacrificial layer of the seventh intermediate productGrowing a layer of Si on the chemical vapor deposition equipment3N4A thin film with the thickness of 400-600nm is formed to form a support layer 402, and a first substrate is obtained;
depositing a layer of VO on the surface of the support layer 402 of the first substrate by using a magnetron sputtering devicexA thin film, 50-100nm thick, forming a thermistor layer 403, obtaining a first intermediate product;
s2, growing a layer of Si on the surface of the thermistor layer 403 of the first intermediate product by using plasma enhanced chemical vapor deposition3N4A thin film, forming a first passivation layer 405, obtaining a second intermediate product;
s3, growing an Au thin film on the surface of the first passivation layer 405 by using electron beam evaporation equipment, wherein the thickness of the Au thin film is 50-200nm, and forming a metal layer 3 to obtain a third intermediate product;
s4, growing a layer of SiO on the surface of the metal layer 3 by utilizing PECVD equipment2The thickness of the dielectric layer is 50-500nm, a dielectric layer 2 is formed, and a fourth intermediate product is obtained;
s5, spin-coating a layer of polyimide photoresist on the surface of the dielectric layer 2, etching a microstructure array inverse structure on the surface of the polyimide photoresist by adopting electron beam lithography equipment, growing a layer of Au thin film with the thickness of 50-100nm by utilizing electron beam evaporation equipment to obtain a fifth intermediate product,
s5, stripping the fifth intermediate product by a wet chemical method to form a microstructure array 1;
respectively etching VO by using dry etching methodxThermistor layer 403 and Si3N4And (3) supporting the layer 402 until the polyimide photoresist 5 below the supporting layer is exposed, removing the sacrificial layer by using oxygen plasma to form a cavity, and preparing the thermal detector.
In the first embodiment of the preparation method of the heat detector, the preparation of the heat detector is realized by sequentially depositing the second passivation layer, the sacrificial layer, the supporting layer, the thermistor layer, the second passivation layer, the metal layer, the dielectric layer and the microstructure array on the silicon chip.
The second embodiment of the method for manufacturing a thermal detector according to the present invention differs from the first embodiment of the method for manufacturing a thermal detector according to the present invention in that:
obtaining a second substrate according to the following steps:
cleaning the silicon wafer 6, drying and growing a layer of Si by using plasma enhanced chemical vapor deposition equipment3N4The thickness is 100-200nm, and the second passivation layer 401 is formed;
the second passivation layer 401 is subjected to a photo-etching process to form two through holes for circuit connection, the two through holes are located at the input end of the working circuit, and then a second substrate is obtained.
Obtaining a second intermediate product according to the following steps:
photoetching is carried out on the surface of the thermistor layer 403 of the first intermediate product and the positions corresponding to the two through holes of the second passivation layer 401 by using a dry etching method, and the through holes are formed on the thermistor layer 403 and the first passivation layer 401 to obtain an eighth intermediate product;
spin-coating a layer of polyimide photoresist on the surface of the thermistor layer 403 of the eighth intermediate product, performing photolithography to form an electrode layer with an inverse structure shape, growing a layer of Cr with a thickness of 50-100nm by using electron beam evaporation equipment, and performing stripping treatment to form an electrode layer 404 to obtain a ninth intermediate product;
growing a layer of Si on the surface of the electrode layer 404 of the ninth intermediate product by using plasma enhanced chemical vapor deposition3N4Thin film, forming a first passivation layer 405, a second intermediate product is obtained.
In the second embodiment of the method for manufacturing the thermal detector, the second passivation layer, the sacrificial layer, the supporting layer and the thermistor layer are sequentially deposited on the silicon chip with the working circuit, the electrode layer is formed on the thermistor layer through a stripping process, then the second passivation layer, the metal layer, the dielectric layer and the microstructure array are continuously deposited on the electrode layer, the thermal detector is manufactured, after receiving an optical signal, the optical signal is transmitted to the thermistor layer, the thermistor layer passes through the electrode layer and the working circuit on the silicon chip, the signal received by the thermistor layer is demodulated through the working circuit, and the intensity of narrow-spectrum infrared light or the intensity of a polarization form screened under the narrow-spectrum infrared light can be directly obtained through thermal detection.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. A thermal detector, comprising: the optical resonator comprises a microstructure array, a dielectric layer, a metal layer, a first passivation layer and a thermistor layer which are sequentially arranged from top to bottom, wherein the microstructure array, the dielectric layer and the metal layer form an optical resonator;
the microstructure array is used for carrying out wavelength screening on incident infrared light and absorbing the infrared light with a narrow-band spectrum; the material of the microstructure array is metal; the microstructure array is a plurality of double-trapezoid structures arranged in an array to obtain polarization-independent response characteristics, or the microstructure array is a plurality of strip structures arranged in an array to obtain polarization-dependent response characteristics;
the metal layer is used for converting infrared light with a narrow-band spectrum into a thermal signal carrying infrared light intensity information of the narrow-band spectrum;
the first passivation layer is used for realizing the electrical isolation of the metal layer and the thermistor layer;
the thermistor layer is used for converting a heat signal carrying the infrared light intensity information of the narrow-band spectrum into resistance value information carrying the infrared light intensity information of the narrow-band spectrum;
acquiring infrared light intensity information of the narrow-band spectrum by demodulating resistance value information carrying the infrared light intensity information of the narrow-band spectrum, wherein the infrared light of the narrow-band spectrum refers to infrared light with a spectral range within hundreds of nanometers;
the heat detector is a non-refrigeration type heat detector.
2. The thermal detector of claim 1, wherein the microstructure array simultaneously screens incident infrared light for polarization and absorbs infrared light having the screened polarization in a narrow band spectrum.
3. A heat detector according to any one of claims 1 or 2, wherein the heat detector further comprises a support layer having a configuration of a few words, located below the thermistor layer, for separating the thermistor layer from the structure for mounting the heat detector, preventing heat loss.
4. A method for manufacturing a thermal detector according to claim 1, comprising the steps of:
s1 attaching the thermistor layer on a first substrate to obtain a first intermediate product;
s2 attaching the first passivation layer on the thermistor layer of the first intermediate product to obtain a second intermediate product;
s3, attaching a metal layer on the first passivation layer of the second intermediate product to obtain a third intermediate product;
s4, attaching the dielectric layer to the metal layer of the third intermediate product to obtain a fourth intermediate product;
s5, forming a photoresist layer with a microstructure array reverse structure on the dielectric layer of the fourth intermediate product, and attaching a metal layer on the photoresist layer to obtain a fifth intermediate product;
s6, removing the photoresist from the fifth intermediate product by a wet chemical method to obtain the heat detector.
5. The production method according to claim 4, wherein obtaining the first substrate includes the steps of:
s11, attaching photoresist on the second substrate to form a sacrificial layer, and obtaining a sixth intermediate product;
s12 attaching the support layer on the sixth intermediate product to obtain a first substrate.
6. The method of claim 4 or 5, wherein the metal layer is attached by electron beam evaporation in the steps S3 and S5.
7. The method of claim 4 or 5, wherein the step S2 is attaching the first passivation layer by chemical vapor deposition.
8. The method of claim 4 or 5, wherein the step S4 is to use chemical vapor deposition to attach the dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710488564.8A CN107340063B (en) | 2017-06-23 | 2017-06-23 | Thermal detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710488564.8A CN107340063B (en) | 2017-06-23 | 2017-06-23 | Thermal detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107340063A CN107340063A (en) | 2017-11-10 |
| CN107340063B true CN107340063B (en) | 2019-12-20 |
Family
ID=60220077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710488564.8A Active CN107340063B (en) | 2017-06-23 | 2017-06-23 | Thermal detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107340063B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110361349B (en) * | 2018-04-03 | 2021-09-28 | 南京大学 | Multi-channel infrared spectrum detector based on integrated circuit technology and preparation method thereof |
| CN109813449A (en) * | 2019-01-31 | 2019-05-28 | 中国科学院长春光学精密机械与物理研究所 | A kind of integrated polarizing non-refrigerated infrared detector and production method |
| CN110332998A (en) * | 2019-06-17 | 2019-10-15 | 华中科技大学 | Metamaterial non-refrigerating infrared focal plane polychrome polarization detector and preparation method thereof |
| CN111060466B (en) * | 2019-12-30 | 2023-01-13 | 暨南大学 | Portable optical gas sensor |
| CN113130693B (en) * | 2019-12-31 | 2022-08-19 | 南京大学 | Metallized polysilicon infrared micro-bolometer and preparation method thereof |
| CN112082967B (en) * | 2020-09-18 | 2021-08-31 | 重庆大学 | Ultra-narrow band infrared thermal radiation light source and compact infrared gas sensor |
| CN113465736B (en) * | 2021-06-30 | 2023-08-11 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996719A (en) * | 2014-05-16 | 2014-08-20 | 中国科学技术大学 | Metamaterial optical sensor based on medium-medium-metal structure and preparation method thereof |
| CN104143580A (en) * | 2014-08-08 | 2014-11-12 | 电子科技大学 | Terahertz wave detector and manufacturing method thereof |
| CN104535198A (en) * | 2015-01-16 | 2015-04-22 | 电子科技大学 | Terahertz microbolometer based on metamaterial absorber and preparation method of terahertz microbolometer |
| CN106784120A (en) * | 2016-12-08 | 2017-05-31 | 中国科学院半导体研究所 | A kind of InGaAs infrared polarization detectors based on surface plasma effect |
-
2017
- 2017-06-23 CN CN201710488564.8A patent/CN107340063B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996719A (en) * | 2014-05-16 | 2014-08-20 | 中国科学技术大学 | Metamaterial optical sensor based on medium-medium-metal structure and preparation method thereof |
| CN104143580A (en) * | 2014-08-08 | 2014-11-12 | 电子科技大学 | Terahertz wave detector and manufacturing method thereof |
| CN104535198A (en) * | 2015-01-16 | 2015-04-22 | 电子科技大学 | Terahertz microbolometer based on metamaterial absorber and preparation method of terahertz microbolometer |
| CN106784120A (en) * | 2016-12-08 | 2017-05-31 | 中国科学院半导体研究所 | A kind of InGaAs infrared polarization detectors based on surface plasma effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107340063A (en) | 2017-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107340063B (en) | Thermal detector and preparation method thereof | |
| US7741604B2 (en) | Bolometer-type THz-wave detector | |
| US7557349B2 (en) | Bolometer-type THz-wave detector | |
| JP6161554B2 (en) | Electromagnetic wave detector and electromagnetic wave detector array | |
| WO2012071820A1 (en) | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane | |
| US8895924B2 (en) | Infrared detector based on suspended bolometric micro-plates | |
| KR102040149B1 (en) | Infrared detector | |
| US9513171B2 (en) | Terahertz radiation detector, focal plane array incorporating terahertz detector, multispectral metamaterial absorber, and combined optical filter and terahertz absorber | |
| US8541742B2 (en) | Bolometer-type THz wave detector | |
| CN109813447B (en) | Uncooled infrared focal plane integrated with broadband artificial surface and manufacturing method thereof | |
| JP2015045629A5 (en) | ||
| CN106517077B (en) | A kind of infrared detector and preparation method thereof | |
| US20140226021A1 (en) | Microbolometer array with improved performance | |
| CN107101728B (en) | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method | |
| US20130146773A1 (en) | Bolometric detector of an electromagnetic radiation in the terahertz range and detector array device comprising said detectors | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| CN107150995B (en) | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof | |
| JP2001156277A (en) | Infrared detector | |
| US10050075B2 (en) | Multi-layer extraordinary optical transmission filter systems, devices, and methods | |
| JP2015121417A (en) | Electromagnetic wave detector | |
| CN110332998A (en) | Metamaterial non-refrigerating infrared focal plane polychrome polarization detector and preparation method thereof | |
| CN106340561A (en) | Novel uncooled infrared focal plane detector pixel and fabrication method thereof | |
| CN109813449A (en) | A kind of integrated polarizing non-refrigerated infrared detector and production method | |
| US20150200348A1 (en) | Photo detector | |
| CN111121978A (en) | Broadband non-refrigeration infrared polarization sensitive pixel structure, array and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |