CN107331735A - A kind of preparation method of the two-sided PERC solar cells with back side silver grating line - Google Patents
A kind of preparation method of the two-sided PERC solar cells with back side silver grating line Download PDFInfo
- Publication number
- CN107331735A CN107331735A CN201710757156.8A CN201710757156A CN107331735A CN 107331735 A CN107331735 A CN 107331735A CN 201710757156 A CN201710757156 A CN 201710757156A CN 107331735 A CN107331735 A CN 107331735A
- Authority
- CN
- China
- Prior art keywords
- back side
- solar cells
- sided perc
- silver grating
- perc solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 83
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 83
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 83
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000004332 silver Substances 0.000 title claims abstract description 81
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000004411 aluminium Substances 0.000 claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000007639 printing Methods 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 239000002585 base Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
- 229940037003 alum Drugs 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
This application discloses a kind of preparation method of the two-sided PERC solar cells with back side silver grating line, it is included on P-type substrate and makes the two-sided PERC solar cells with back aluminium grid line；The back aluminium grid line of the two-sided PERC solar cells is removed, back side groove is formed, the side adjacent with the P-type substrate of the back side groove forms Al-BSF；The embedded printing silver grating line in the back side groove, the silver grating line is connected to the P-type substrate by the Al-BSF；The silver grating line is sintered.The preparation method of the above-mentioned two-sided PERC solar cells with back side silver grating line, while improving the fill factor, curve factor of two-sided PERC batteries, can reduce the width of back side grid line, reduces the shading-area at the back side in reduction back side resistance.
Description
Technical field
The present invention relates to filed of crystal silicon solaode technique, more specifically to a kind of with back side silver grating line
The preparation method of two-sided PERC solar cells.
Background technology
With the progress of photovoltaic industry, chased after for solar cell high conversion efficiency and component high-output power
Ask, increasing high-efficiency battery technology is applied in the commercialization volume production of crystal-silicon solar cell.Wherein important one kind
High-efficiency battery technology is passivation emitter rear-face contact technology (Passivated Emitter backcontact, PERC).This
The technology of kind Al2O3/SiNxOverlayer passivation film substitutes the Al-BSF of existing solar cell, substantially improves the crystalline silicon sun
The passivation effect of cell backside, improves the internal quantum efficiency of medium-long wave band so that the volume production efficiency of crystal-silicon solar cell is carried
It is high about 1 percentage point.Newest volume production PERC battery structures are just being gradually transitions two-sided PERC batteries, compared to PERC batteries,
Two-sided PERC batteries are not required to additional process flow and equipment, and all standing aluminium of PERC batteries is replaced using only the thin grid line of aluminium
Layer, the line-like area that the thin grid line of aluminium and two-sided PERC cell backsides locally open film coincides, and by opening diaphragm area and silicon chip
It is connected, realizes that electric current is transmitted.It is Al between the thin grid line of back aluminium2O3/SiNxOverlayer passivation film, can absorb in environment
Reflected light, this makes it possible to increase extra power output, while also reducing the consumption of back side aluminum slurry.Because the two are excellent
Gesture, two-sided PERC batteries are more and more paid attention to.
The preparation method of existing two-sided PERC solar cells comprises the following steps：Alkali making herbs into wool, phosphorus diffusion, remove PSG and the back of the body
Mirror polish, backside deposition aluminum oxide film and silicon nitride film, front cvd nitride silicon thin film, backside laser are partially stripped oxidation
Aluminium/silicon nitride film, silk-screen printing backplate and back aluminium grid line, silk-screen printing front electrode and sintering, by above-mentioned work
The two-sided PERC cell backsides of skill flow manufacturing collect back side electric current using alum gate line, due to the thin grid line of silk-screen printing sintered aluminium
Line resistance than larger so that two-sided PERC batteries have upper more than comparison compared to existing one side PERC batteries in series resistance
Rise, the fill factor, curve factor of two-sided PERC batteries is reduced, to take into account the fill factor, curve factor of two-sided PERC batteries, it usually needs the increase back side
The width of alum gate line which adds the shading-area at the back side, is reduced and utilizes effect to Ambient to 300um or so
Really.
The content of the invention
In order to solve the above technical problems, the invention provides a kind of two-sided PERC solar cells with back side silver grating line
Preparation method, while improving the fill factor, curve factor of two-sided PERC batteries, can reduce the width of back side grid line in reduction back side resistance
Degree, reduces the shading-area at the back side.
A kind of preparation method for two-sided PERC solar cells with back side silver grating line that the present invention is provided, including：
The two-sided PERC solar cells with back aluminium grid line are made on P-type substrate；
Remove the back aluminium grid line of the two-sided PERC solar cells, form back side groove, the back side groove with institute
State the adjacent side of P-type substrate and form Al-BSF；
The embedded printing silver grating line in the back side groove, the silver grating line is connected to the P by the Al-BSF
Type substrate；
The silver grating line is sintered.
It is preferred that, in the preparation method of the above-mentioned two-sided PERC solar cells with back side silver grating line, the removal institute
The back aluminium grid line for stating two-sided PERC solar cells is：
Using the mixed solution of hydrochloric acid and nitric acid to the back aluminium grid line pickling 30 seconds of the two-sided PERC solar cells extremely
90 seconds, remove the back aluminium grid line of the two-sided PERC solar cells.
It is preferred that, it is described to form the back of the body in the preparation method of the above-mentioned two-sided PERC solar cells with back side silver grating line
Face groove is：
It is 5 microns to the back side groove that 25 microns and width are 30 microns to 60 microns to form depth.
It is preferred that, it is described described in the preparation method of the above-mentioned two-sided PERC solar cells with back side silver grating line
Embedded printing silver grating line is in the groove of the back side：
The silver paste that weight range is 0.9 gram to 1.3 grams is printed in each back side groove, the silver-colored grid are formed
Line.
It is preferred that, it is described to described in the preparation method of the above-mentioned two-sided PERC solar cells with back side silver grating line
Silver grating line be sintered for：
Set sintering range be 550 DEG C to 600 DEG C, and set more than 500 DEG C sintering time scope be 3 seconds extremely
30 seconds, the silver grating line is sintered.
It is preferred that, it is described in p-type base in the preparation method of the above-mentioned two-sided PERC solar cells with back side silver grating line
The two-sided PERC solar cells with back aluminium grid line are made on bottom to be included：
Alkali making herbs into wool and phosphorus diffusion are carried out on the P-type substrate；
Remove PSG and polished backside；
In the backside deposition aluminum oxide film and silicon nitride film of the P-type substrate；
The aluminum oxide film and the silicon nitride film are partially stripped at the back side of the P-type substrate；
Silk-screen printing backplate and back aluminium grid line；
Silk-screen printing front electrode is simultaneously sintered.
It can be seen from the above technical proposal that the above-mentioned two-sided PERC sun with back side silver grating line provided by the present invention
The preparation method of battery, after two-sided PERC solar cell of the making with back aluminium grid line on P-type substrate, in addition to
Remove the back aluminium grid line of the two-sided PERC solar cells, form back side groove, the back side groove with the P-type substrate
Adjacent side forms Al-BSF；The embedded printing silver grating line in the back side groove, the silver grating line is carried on the back by the aluminium
Field is connected to the P-type substrate；The silver grating line is sintered, therefore, it is possible in reduction back side resistance, improve two-sided PERC
While the fill factor, curve factor of battery, reduce the width of back side grid line, reduce the shading-area at the back side.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 for the embodiment of the present application is provided the first have back side silver grating line two-sided PERC solar cells making side
The schematic diagram of method.
Embodiment
The core concept of the present invention is to provide a kind of making side of the two-sided PERC solar cells with back side silver grating line
Method, can reduce the width of back side grid line, drop in reduction back side resistance, while improving the fill factor, curve factor of two-sided PERC batteries
The shading-area at the low back side.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The first of the embodiment of the present application offer has the preparation method of the two-sided PERC solar cells of back side silver grating line such as
Shown in Fig. 1, Fig. 1 for the embodiment of the present application is provided the first have back side silver grating line two-sided PERC solar cells making side
The schematic diagram of method, this method comprises the following steps：
S1：The two-sided PERC solar cells with back aluminium grid line are made on P-type substrate；
It should be noted that in this step, the thin grid line of printed back aluminium simultaneously sinters and has two effects, wherein, first
Effect is to form back side groove, and another is to be formed to mix Al in the bottom of groove3+Al-BSF.Al-BSF can make silver and p-type
Silicon base forms good contact resistance.
S2：Remove the back aluminium grid line of the two-sided PERC solar cells, form back side groove, the back side groove with
The adjacent side of the P-type substrate forms Al-BSF；
Specifically, in previous step in the pyroprocess of sintering circuit, alum gate line and P-type substrate pass through back side Al2O3/SiN
Mutually molten diffusion occurs for the window that is partially stripped so that the P-type substrate back side formed deep about 20um, width about 50um U-shaped the back side it is recessed
Groove, while Al is mixed in the silicon base formation of back side groove side3+Al-BSF, groove opposite side is alum gate line, and this step can be
Dilute HCl/HNO3Alum gate line reaction generation AlCl in acid system3And AlNO3, and dissolve in the solution to be removed, leave U
The back side groove of shape, wherein, HCl/HNO3The concentration of acid system solution is between 1%-5%.
S3：The embedded printing silver grating line in the back side groove, the silver grating line is connected to institute by the Al-BSF
State P-type substrate；
It should be noted that in the program, silver paste is printed to by way of exactitude position in the groove of the back side, formed
The silver grating line of grid is buried at the back side, to avoid back silver main grid from destroying the Al at the back side2O3/Si3N4Laminate film, printed silver paste
For not with Si3N4The non-penetrative silver paste of reaction, the main component of backplate is ag material, and it is two-sided that grid are buried at this back side
The back side grid line of PERC batteries is made up of main grid and thin grid, and both main components are all silver, thus backplate can be by carrying on the back
The silver-colored main grid in face is substituted, and also just eliminates silk-screen printing backplate process.
S4：The silver grating line is sintered.
After silver-colored thin grid line, because the line resistance of silver-colored thin grid line is less than alum gate line, thus silver-colored thin grid line can be reduced
Width is without increasing the all-in resistance at the back side, by silver grating line limitation overleaf inside grooves, therefore stop of the reduction to sunray,
Improve conversion efficiency.
It can be seen from the above technical proposal that the embodiment of the present application provided the first there is the two-sided of back side silver grating line
The preparation method of PERC solar cells, due on P-type substrate make with back aluminium grid line two-sided PERC solar cells it
Afterwards, include the back aluminium grid line for removing the two-sided PERC solar cells, form back side groove, the back side groove with institute
State the adjacent side of P-type substrate and form Al-BSF；The embedded printing silver grating line in the back side groove, the silver grating line passes through
The Al-BSF is connected to the P-type substrate；The silver grating line is sintered, therefore, it is possible in reduction back side resistance, improve
While the fill factor, curve factor of two-sided PERC batteries, reduce the width of back side grid line, reduce the shading-area at the back side.
The preparation method for second of two-sided PERC solar cell with back side silver grating line that the embodiment of the present application is provided, be
It is above-mentioned the first there is the preparation method of two-sided PERC solar cells of back side silver grating line on the basis of, in addition to following technology
Feature：
It is described remove the two-sided PERC solar cells back aluminium grid line be：
Using the mixed solution of hydrochloric acid and nitric acid to the back aluminium grid line pickling 30 seconds of the two-sided PERC solar cells extremely
90 seconds, remove the back aluminium grid line of the two-sided PERC solar cells.
It should be noted that using this technological parameter, back aluminium grid line can be more thoroughly removed, and will not be to it
He partly causes to damage.
The embodiment of the present application provide the third have back side silver grating line two-sided PERC solar cells preparation method, be
It is above-mentioned the first there is the preparation method of two-sided PERC solar cells of back side silver grating line on the basis of, in addition to following technology
Feature：
Formation back side groove is：
It is 5 microns to the back side groove that 25 microns and width are 30 microns to 60 microns to form depth.
It should be noted that the back side groove of this size is mutually arranged in parallel, it is ensured that the silver grating line and aluminium produced
Back surface field is combined with electric property excellent enough.
The preparation method for the 4th kind of two-sided PERC solar cell with back side silver grating line that the embodiment of the present application is provided, be
It is above-mentioned the first there is the preparation method of two-sided PERC solar cells of back side silver grating line on the basis of, in addition to following technology
Feature：
It is described in the back side groove it is embedded printing silver grating line be：
The silver paste that weight range is 0.9 gram to 1.3 grams is printed in each back side groove, the silver-colored grid are formed
Line.
It should be noted that the silver paste of this weight range, which ensure that, is enough to fill completely described back side groove, also can
It is enough to accomplish to save cost, moreover, the silver paste of printing is the low-temperature sintering slurry of non-penetrative, printed by exactitude position mode
Into the back side groove.
The preparation method for the 5th kind of two-sided PERC solar cell with back side silver grating line that the embodiment of the present application is provided, be
It is above-mentioned the first there is the preparation method of two-sided PERC solar cells of back side silver grating line on the basis of, in addition to following technology
Feature：
It is described the silver grating line is sintered for：
Set sintering range be 550 DEG C to 600 DEG C, and set more than 500 DEG C sintering time scope be 3 seconds extremely
30 seconds, the silver grating line is sintered.
It should be noted that after low-temperature sintering, the Al-BSF in back side silver grating line and the back side groove is formed preferably
Ohmic contact, and the back side of two-sided PERC batteries is bonded in securely.
The preparation method for the 6th kind of two-sided PERC solar cell with back side silver grating line that the embodiment of the present application is provided, be
It is above-mentioned the first have to the 5th kind back side silver grating line two-sided PERC solar cells preparation method in any basis
On, in addition to following technical characteristic：
The two-sided PERC solar cells with back aluminium grid line that made on P-type substrate include：
Alkali making herbs into wool and phosphorus diffusion are carried out on the P-type substrate；
Remove PSG and polished backside；
In the backside deposition aluminum oxide film and silicon nitride film of the P-type substrate；
The aluminum oxide film and the silicon nitride film are partially stripped at the back side of the P-type substrate；
Silk-screen printing backplate and back aluminium grid line；
Silk-screen printing front electrode is simultaneously sintered.
In summary, in such scheme, original alum gate line is replaced with silver grating line using the back side, the line resistance of silver grating line shows
Write less than the Al-BSF Ohmic contact in alum gate line, and silver grating line and back side groove well, this reduces two-sided PERC electricity
The resistance at the pond back side, can reduce the series resistances of two-sided PERC batteries about 0.2m Ω, and the fill factor, curve factor of battery is also correspondingly
Improve, be even above common one side PERC batteries, its conversion efficiency also gets a promotion, and back side silver grating line is embedded in the back side
In groove, width is between 30-60um, and compared to current two-sided PERC batteries, the shading-area of the thin grid line in the back side is just reduced
More than 75%, therefore, it is possible to absorb more surrounding environment reflected lights, contribute more power outputs.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (6)
1. a kind of preparation method of the two-sided PERC solar cells with back side silver grating line, including：
The two-sided PERC solar cells with back aluminium grid line are made on P-type substrate；
Remove the back aluminium grid line of the two-sided PERC solar cells, form back side groove, the back side groove with the p-type
The adjacent side of substrate forms Al-BSF；
The embedded printing silver grating line in the back side groove, the silver grating line is connected to the p-type base by the Al-BSF
Bottom；
The silver grating line is sintered.
2. the preparation method of the two-sided PERC solar cells according to claim 1 with back side silver grating line, its feature exists
In the back aluminium grid line of the removal two-sided PERC solar cells is：
Back aluminium grid line pickling 30 seconds to 90 seconds using the mixed solution of hydrochloric acid and nitric acid to the two-sided PERC solar cells,
Remove the back aluminium grid line of the two-sided PERC solar cells.
3. the preparation method of the two-sided PERC solar cells according to claim 1 with back side silver grating line, its feature exists
In formation back side groove is：
It is 5 microns to the back side groove that 25 microns and width are 30 microns to 60 microns to form depth.
4. the preparation method of the two-sided PERC solar cells according to claim 1 with back side silver grating line, its feature exists
In the printing silver grating line embedded in the back side groove is：
The silver paste that weight range is 0.9 gram to 1.3 grams is printed in each back side groove, the silver grating line is formed.
5. the preparation method of the two-sided PERC solar cells according to claim 1 with back side silver grating line, its feature exists
In, it is described the silver grating line is sintered for：
It is 550 DEG C to 600 DEG C to set sintering range, and sets more than 500 DEG C of sintering time scope for 3 seconds to 30
Second, the silver grating line is sintered.
6. the preparation method of the two-sided PERC solar cells with back side silver grating line according to claim any one of 1-5,
Characterized in that, the two-sided PERC solar cells with back aluminium grid line that made on P-type substrate include：
Alkali making herbs into wool and phosphorus diffusion are carried out on the P-type substrate；
Remove PSG and polished backside；
In the backside deposition aluminum oxide film and silicon nitride film of the P-type substrate；
The aluminum oxide film and the silicon nitride film are partially stripped at the back side of the P-type substrate；
Silk-screen printing backplate and back aluminium grid line；
Silk-screen printing front electrode is simultaneously sintered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710757156.8A CN107331735B (en) | 2017-08-29 | 2017-08-29 | A kind of production method of the two-sided PERC solar cell with back side silver grating line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710757156.8A CN107331735B (en) | 2017-08-29 | 2017-08-29 | A kind of production method of the two-sided PERC solar cell with back side silver grating line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107331735A true CN107331735A (en) | 2017-11-07 |
| CN107331735B CN107331735B (en) | 2018-12-28 |
Family
ID=60203836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710757156.8A Active CN107331735B (en) | 2017-08-29 | 2017-08-29 | A kind of production method of the two-sided PERC solar cell with back side silver grating line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107331735B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863980A (en) * | 2020-07-28 | 2020-10-30 | 浙江晶科能源有限公司 | Back metallization structure of solar cell and preparation method thereof |
| CN112687755A (en) * | 2020-12-28 | 2021-04-20 | 浙江正泰太阳能科技有限公司 | Back metal electrode of N-type TopCOn solar cell, preparation method and cell |
| CN113140646A (en) * | 2021-04-23 | 2021-07-20 | 南通天晟新能源科技有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN115172533A (en) * | 2022-08-12 | 2022-10-11 | 通威太阳能（安徽）有限公司 | Solar cell processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276278A (en) * | 1987-05-08 | 1988-11-14 | Toa Nenryo Kogyo Kk | Transparent electrode with buried interconnection |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US20100037952A1 (en) * | 2008-08-18 | 2010-02-18 | Semiconductor Manufacturing International (Shanghai) Corporation | Selective Emitter Solar Cell and Fabrication Method Thereof |
| CN103022262A (en) * | 2013-01-06 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Preparation method of back point contact solar cell |
| CN106847946A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
-
2017
- 2017-08-29 CN CN201710757156.8A patent/CN107331735B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276278A (en) * | 1987-05-08 | 1988-11-14 | Toa Nenryo Kogyo Kk | Transparent electrode with buried interconnection |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US20100037952A1 (en) * | 2008-08-18 | 2010-02-18 | Semiconductor Manufacturing International (Shanghai) Corporation | Selective Emitter Solar Cell and Fabrication Method Thereof |
| CN103022262A (en) * | 2013-01-06 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Preparation method of back point contact solar cell |
| CN106847946A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863980A (en) * | 2020-07-28 | 2020-10-30 | 浙江晶科能源有限公司 | Back metallization structure of solar cell and preparation method thereof |
| CN112687755A (en) * | 2020-12-28 | 2021-04-20 | 浙江正泰太阳能科技有限公司 | Back metal electrode of N-type TopCOn solar cell, preparation method and cell |
| CN113140646A (en) * | 2021-04-23 | 2021-07-20 | 南通天晟新能源科技有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN113140646B (en) * | 2021-04-23 | 2024-05-07 | 南通天盛新能源股份有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN115172533A (en) * | 2022-08-12 | 2022-10-11 | 通威太阳能（安徽）有限公司 | Solar cell processing method |
| CN115172533B (en) * | 2022-08-12 | 2024-05-14 | 通威太阳能（安徽）有限公司 | Solar cell processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107331735B (en) | 2018-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105247686B (en) | Solar battery cell and its manufacture method, solar module | |
| JP5739037B2 (en) | Solar cell module structure | |
| JP5519285B2 (en) | Pyramidal three-dimensional thin film solar cell | |
| CN107331735B (en) | A kind of production method of the two-sided PERC solar cell with back side silver grating line | |
| CN103489934B (en) | Local aluminum back surface field solar cell of a kind of transparent two sides and preparation method thereof | |
| JP5174903B2 (en) | Method for manufacturing solar battery cell | |
| US20120097245A1 (en) | Solar cell with interconnection sheet, solar cell module, and method for producing solar cell with internconnection sheet | |
| CN109244194A (en) | A kind of preparation method of low cost p-type all back-contact electrodes crystal silicon solar battery | |
| CN105324849B (en) | Back contacted solar cell | |
| CN103029423B (en) | Solar battery sheet and printing screen thereof | |
| TW201436259A (en) | Solar cell and method for producing same | |
| JP2007266262A (en) | Solar cell with interconnector, solar cell module, and method for manufacturing solar cell module | |
| CN107221568A (en) | A kind of preparation method of the selection two-sided PERC batteries of emitter stage | |
| CN209087883U (en) | P-type back contacted solar cell | |
| JP6774163B2 (en) | Photoelectric converter | |
| WO2022142054A1 (en) | Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell | |
| CN110047952A (en) | A kind of solar battery Al grid line structure and preparation method thereof | |
| CN111816714A (en) | Laser boron-doped back-passivated solar cell and preparation method thereof | |
| WO2014206211A1 (en) | Back-passivated solar battery and manufacturing method therefor | |
| CN102683437A (en) | Solar cell electrode structure and solar cell series connection method | |
| CN207947297U (en) | A kind of stacked wafer moudle promoting transfer efficiency using reflected light | |
| CN102983225A (en) | Manufacturing process of local back surface field | |
| CN108054219A (en) | A kind of p-type solar cell and preparation method thereof | |
| WO2013161145A1 (en) | Backside bonded solar cell and method for manufacturing same | |
| CN207489885U (en) | A kind of two-sided PERC solar cells with back side silver grating line |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |