CN107331705B - Nanowire device based on bridging growth and preparation method thereof - Google Patents
Nanowire device based on bridging growth and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
Abstract
The invention relates to a preparation method of a nanowire device based on bridging growth, which comprises the following steps: preparing a groove structure on a substrate with a conducting layer, growing a nanowire on the side wall of the groove to enable the nanowire to bridge the conducting layer on two sides of the groove, and simultaneously generating a deposit in the groove in the growing process; the sacrificial layer or the sacrificial strip is arranged in the groove structure, or the back of the groove structure is provided with the groove, so that the sediments on two sides of the groove structure are isolated from each other, the problem of the sediments brought in the growth process of the nanowire is eliminated, and the electrical interconnection on two sides of the groove structure only depends on the bridging nanowire. The beneficial effects are as follows: the invention solves the problem of sediment in the groove in the growth process of the bridging nanowire, thereby ensuring that the electrical interconnection at two sides of the groove is only determined by the bridging nanowire, eliminating the influence of conductive sediment on a nanowire device and improving the performance of the bridging nanowire device.
Description
Technical Field
The invention relates to the field of nanowire devices, in particular to a nanowire device based on bridging growth and a preparation method thereof.
Background
Nanotechnology is considered one of the three scientific techniques of the 21 st century. Among them, the nanowire is considered as a basic structure of a micro-nano electronic device and a photonic device due to its unique one-dimensional quantum structure.
Despite the important application prospects of nanowires, practical and industrial application of nanowire devices is required to solve a series of problems, wherein the key problem is how to manipulate, assemble and process extremely fine nanowires. Currently, the fabrication of nanowire devices, as disclosed in the Nanotechnology, 24(2013)245306 paper, typically involves the following complex steps: 1. growing a nanowire on a substrate; 2. the nanowires are stripped from the substrate and transferred to the surface of another substrate, and parallel and ordered arrangement is realized; 3. and plating metal electrodes at two ends of the nano wire.
However, the above preparation method has the following disadvantages: the process steps are complex; the steps of stripping and arranging the nanowires need to adopt various chemical reagents, and the surfaces of the nanowires can be polluted (or damaged); and because the metal electrode and the nanowire are in physical contact, the contact area between the nanowire and the electrode is small, so that the electrical contact characteristic between the metal electrode and the nanowire is poor, and the attachment is not firm.
For this purpose, processes for the bridging growth of nanowires have been proposed, such as: ZL 201110144804.5; nanotechnology, 15(2004) L5-L8 discloses a process for the bridge growth of nanowires: in the growth process of the nanowires (step 1 above), the arrangement of the nanowires and the interconnection between the nanowires and the electrodes are simultaneously realized, thereby simplifying the preparation of the device. However, these methods have the following disadvantages: 1. a semiconductor step (or groove) needs to be prepared on a substrate, and the step (or groove) needs to be electrically isolated from the substrate (namely, an electric insulating layer is adopted); 2. the preparation of the three-layer structure (step, electrically insulating layer, and substrate) requires the formation of an electrically insulating layer inside the substrate by wafer bonding or ion implantation, which is complicated in preparation process.
In order to further simplify the manufacturing process, the applicant discloses a nanowire device based on bridging growth and a manufacturing method thereof in chinese patent application 201610213762.9, wherein a conductive layer is plated on an insulating substrate having a groove structure, and a three-layer structure is simplified into a two-layer structure (i.e., a conductive layer and an insulating substrate) to reduce the manufacturing difficulty.
However, the above two schemes for the bridge growth of nanowires have a problem: during the growth of the nanowire, material is also deposited at the bottom of the groove, so that the electrical insulation properties on both sides of the groove are destroyed (corresponding to the creation of a bypass current between the two ends of the bridging nanowire).
In summary, how to solve the problem of the deposition at the bottom of the trench and prepare a high-performance and low-cost nanowire device is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a bridging nanowire device with a simple structure and low cost and a preparation method thereof.
The invention provides a nanowire device based on bridging growth, which adopts the technical scheme that:
a nanowire device based on bridging growth, includes substrate, conducting layer and the nanowire that is provided with groove structure, its characterized in that: the conducting layers are arranged on two sides of the groove structure, the conducting layer on one side wall is used as a source electrode of the nanowire device, the conducting layer on the other side wall is used as a drain electrode of the nanowire device, and the source electrode is connected with the drain electrode through the nanowire; and a sacrificial layer or a sacrificial strip is arranged at the bottom of the groove structure, or a groove penetrating through the substrate and the deposits is arranged at the back of the groove structure, so that the deposits on two sides of the groove are isolated from each other.
The nanowire device based on bridging growth provided by the invention can also have the following auxiliary technical scheme:
wherein, the sacrificial layer is made of a material which can be corroded and resists high temperature.
Wherein the sacrificial layer is a silicon oxide layer.
Wherein, the sacrificial strip is a high temperature resistant material.
Wherein, the sacrificial strip is quartz fiber.
Catalyst particles are arranged at the joint of one end or two ends of the nanowire and the conducting layer structure, and the catalyst particles are one or more of gold, nickel, iron, gold-nickel alloy, gallium, indium and gallium nitride.
The invention also provides a preparation method of the nanowire device based on bridging growth, which adopts the technical scheme that:
a preparation method of a nanowire device based on bridging growth is characterized by comprising the following steps: the method comprises the following steps:
s1, depositing a conductive layer on the surface of the substrate;
s2, preparing a groove structure penetrating through the conducting layer on the insulating substrate with the conducting layer by a chemical etching, laser ablation or mechanical cutting method so as to form a source electrode and a drain electrode which are mutually insulated on two sides of the groove structure;
s3, arranging a sacrificial layer or a sacrificial strip at the bottom of the groove structure;
s4, attaching catalyst particles on the source electrode and/or the drain electrode, wherein the catalyst particles are used for guiding the growth of the nanowires;
s5, growing a nanowire on the side wall of the conducting layer, wherein the nanowire is connected with the source electrode and the drain electrode;
s6, removing the sacrificial layer or sacrificial strip disposed at the bottom of the groove structure, and the deposit deposited on top of the sacrificial layer or attached on top of the sacrificial strip, so that the deposits on both sides of the groove are isolated, so that the electrical interconnection on both sides of the groove structure depends only on the bridging nanowire.
The preparation method of the nanowire device based on the bridging growth provided by the invention also can have the following subsidiary technical scheme:
in S3, if a sacrificial layer is disposed at the bottom of the groove structure, the sacrificial layer deposited outside the bottom of the groove needs to be removed by photolithography or etching before proceeding to S4.
If a sacrificial layer is arranged at the bottom of the groove structure in S3, removing the sacrificial layer at the bottom of the groove structure in S6 by means of selective chemical etching, and removing the suspended sediment at the top of the groove structure by means of ultrasonic vibration; if a sacrificial strip is disposed at the bottom of the groove structure in S3, the sacrificial strip at the bottom of the groove structure and the deposit attached to the top of the sacrificial layer are directly extracted by chemical etching or by applying an external force in S5.
The invention also provides another preparation method of the nanowire device based on bridging growth, which adopts the technical scheme that:
s1, depositing a conductive layer on the surface of the substrate or enabling the substrate to be conductive;
s2, preparing a groove structure on the substrate by a chemical etching, laser ablation or mechanical cutting method, and taking the conducting layers on two sides of the groove structure as a source electrode and a drain electrode;
s3, attaching catalyst particles on the source electrode and/or the drain electrode, wherein the catalyst particles are used for guiding the growth of the nanowires;
s4, growing a nanowire on the side wall of the conducting layer, wherein the nanowire is connected with the source electrode and the drain electrode;
s5, transferring and fixing the substrate with the groove structure processed in the step S4 onto another insulating substrate;
and S6, forming a groove penetrating through the substrate and the deposit on the back of the groove structure, so that the deposits on two sides of the groove are isolated, and the electrical interconnection on two sides of the groove structure is only dependent on the bridging nanowire.
The implementation of the invention comprises the following technical effects:
according to the preparation method of the nanowire device, the sacrificial layer, the sacrificial strip or the back groove is arranged at the bottom of the groove structure to remove the deposit formed by nanowire growth in the groove, so that the electrical interconnection of two sides of the groove structure is determined only by the bridging nanowire, the influence of the conductive deposit on the nanowire device is eliminated, and the performance of the bridging nanowire device is improved. And the groove structure with the nanowires can be transferred to other substrates, such as flexible substrates, to increase the flexibility of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the general description given above and the detailed description given below, serve to explain the principles of the invention.
Fig. 1 is a substrate after S1 has been performed in example 1, example 2, and example 3 of the present invention.
Fig. 2 is a substrate after S2 has been performed in example 1, example 2, and example 3 of the present invention.
Fig. 3 is the substrate after conducting S3 in example 1 of the present invention.
Fig. 4 is the substrate after conducting S4 in example 1 of the present invention.
Fig. 5 is the substrate after conducting S5 in example 1 of the present invention.
Fig. 6 is the substrate after conducting S6 in example 1 of the present invention.
Fig. 7 is the substrate after conducting S3 in example 2 of the present invention.
Fig. 8 is the substrate after performing S4 in example 2 of the present invention.
Fig. 9 is the substrate after conducting S5 in example 2 of the present invention.
Fig. 10 is the substrate after conducting S6 in example 2 of the present invention.
Fig. 11 is the substrate after conducting S3 in example 3 of the present invention.
Fig. 12 is the substrate after conducting S4 in example 3 of the present invention.
Fig. 13 is the substrate after performing S5 in example 3 of the present invention.
FIG. 14 shows the substrate after S6 of example 3 of the present invention
1. A substrate; 2. a conductive layer; 3. a source electrode; 4. a drain electrode; 5. catalyst particles; 6. a sacrificial strip; 7. a nanowire; 8. (ii) a deposit; 9. a sacrificial layer; 10. an insulating substrate; 11. and (4) a groove.
Detailed Description
The present invention will be described in detail below with reference to embodiments and drawings, it being noted that the described embodiments are only intended to facilitate the understanding of the present invention, and do not limit it in any way.
Referring to fig. 1 to 10, a nanowire device based on bridge growth of the present embodiment includes an insulating substrate 1 provided with a groove structure, a conductive thin layer 2, and a nanowire 7. When a groove structure is etched on a substrate, the conducting layers are divided at two sides of the groove structure, the conducting layer on the side wall of one groove is used as a source electrode 3 of the nanowire device, the conducting layer on the side wall of the other groove is used as a drain electrode 4 of the nanowire device, and the source electrode 3 is connected with the drain electrode 4 through the nanowire 7; the bottom of the groove structure is provided with a sacrificial layer 9 or a sacrificial strip 6, and the sacrificial layer 9 or the sacrificial strip 6 is used for removing a deposit 8 deposited in the groove structure when the nanowire grows; or the back of the groove structure is provided with a groove 11 penetrating through the substrate and the deposit, so that the deposits 8 on both sides of the groove 11 are isolated from each other. The nanowire 7 is a whole root nanowire grown at one time. The combination of the nanowire and the conductive layer in the embodiment is a chemical bond combination formed in the growth of the nanowire, and has firmer combination force and better conductivity.
Referring to fig. 1 to 10, the present embodiment further provides a method for manufacturing a nanowire device based on bridge growth, which can be implemented as follows:
s1, depositing a conductive layer 2 on the surface of the substrate 1, as shown in fig. 1. The insulating substrate 1 is preferably made of a material such as glass, quartz, or sapphire. The conductive layer 2 is preferably selected from one or more of oxide, nitride (such as TiN, GaN, AlGaN, InGaN, etc.), metal, or carbon.
And S2, preparing a groove structure on the surface of the substrate by using a chemical etching, laser ablation or mechanical cutting method. The recess structure penetrates the conductive layer 2 and penetrates into the substrate 1 such that the conductive layer 2 is divided into two parts, which are insulated from each other, as a source electrode 3 and a drain electrode 4, respectively, of the nanowire device, as shown in fig. 2.
S3, growing a sacrificial layer 9 on the bottom of the groove, as shown in FIG. 3, the sacrificial layer outside the bottom of the groove can be removed by photolithography and etching; in this step, the sacrificial layer 9 can also be replaced by the sacrificial strip 6, that is, quartz fiber is placed in the groove as the sacrificial strip 6, as shown in fig. 7.
S4, attaching catalyst particles 5 on the sidewalls of the conductive layer for guiding the growth of the nanowires 7, as shown in fig. 3 and 8. The catalyst particles 5 are preferably selected from gold, nickel, iron, gold-nickel alloys, gallium, indium, and gallium nitride materials. Catalyst particles 5 may be attached to either or both sides of the conductive layer sidewalls.
S5, growing the nanowire 7 on the sidewall of the conductive layer, and as the nanowire 7 grows, the top end of the nanowire 7 meets the conductive layer on the other side and is bonded together, i.e., bridges the nanowire 7, which is a chemical bonding force between solids. While growing the nanowire, a deposit 8 is also formed on the bottom and the sidewall of the groove, as shown in fig. 5 and 9. The material of the deposit 8 is similar to the material of the nanowire 7 (because the deposit 8 and the nanowire 7 are formed simultaneously during the growth process). Thus, the deposit 8 is also electrically conductive, which leads to a bypass current of the nanowire 7, as indicated by the arrows in fig. 5, 9, thereby reducing the performance of the nanowire device.
S6, removing the sacrificial layer 9 by selective chemical corrosion, wherein the deposit 8 is attached to the surface of the sacrificial layer 9, and the deposit 8 forms a suspended loose structure when the sacrificial layer 9 is corroded and removed, so that the suspended deposit 8 can be removed by ultrasonic vibration and other methods. Alternatively, i.e. using the sacrificial strips 6, the sacrificial strips 6 can be removed by chemical etching, or the sacrificial strips 6 can be directly pulled away by applying an external force, while the deposits 8 adhering to the top are carried away. At this point the deposit 8 in the recess is removed in its entirety (or in part), the deposit 8 no longer constituting a continuous conductive path, and the bridging nanowire 7 is the only conductive path between the source electrode 3 and the drain electrode 4 on either side of the recess, as shown in fig. 5 and 9.
The method for growing the nanowire 7 is preferably selected from a chemical vapor deposition method, a molecular beam epitaxy method, an electrochemical growth method, an electrospinning method, a hydrothermal synthesis method, or the like. The nanowire is preferably made of indium tin oxide, titanium nitride, gallium indium nitride, gallium aluminum nitride, aluminum gallium indium arsenide, silicon, germanium, silicon carbide, aluminum gallium indium phosphide or the like.
The following three embodiments are taken as specific examples:
example 1
S1, an n-type gan conductive layer 2 is grown on the surface of a sapphire (i.e., alumina crystal) substrate 1 (insulating substrate) by a chemical vapor deposition process, as shown in fig. 1. The thickness of the conductive layer 2 is 1-20 μm.
S2, using a chemical etching process, a groove structure is formed on the surface of the substrate, and the groove structure separates the gallium nitride conductive layer 2 as the source electrode 3 and the drain electrode 4 of the nanowire, as shown in fig. 2 (electrical insulation between the source electrode and the drain electrode).
S3, growing a silicon oxide layer on the surface of the substrate as a sacrificial layer, removing the silicon oxide sacrificial layer outside the grooves by photolithography and etching, and leaving only the silicon oxide sacrificial layer 9 at the bottom of the grooves, as shown in fig. 3.
S4 followed by attachment of nickel-gold catalyst particles 5 on the conductive layer sidewalls for guiding the nanowire 7 growth, as shown in fig. 4. The number of catalyst particles is preferably between 1 and 1000.
S5, growing a gan nanowire 7 on the sidewall of the conductive layer by metal organic chemical vapor deposition, as the nanowire grows, the top of the nanowire meets and bonds with the conductive layer on the other side-i.e., bridges the nanowire 7. At the same time as the nanowire grows, gallium nitride deposits 8 are also formed at the bottom and sidewalls of the recess, as shown in fig. 5.
S6, placing the substrate with the grown nano-wires in hydrofluoric acid solution for corrosion, and corroding and removing the silicon oxide sacrificial layer 9. Since the hydrofluoric acid solution selectively corrodes the silicon oxide (i.e., hydrofluoric acid only corrodes the silicon oxide and does not corrode the sapphire substrate and the gallium nitride nanowires), the gallium nitride deposit 8 attached to the surface of the silicon oxide is in a suspended state, and the deposit is in a loose and porous state, so that the suspended gallium nitride deposit 8 can be removed by ultrasonic vibration. At this point the deposit 8 no longer constitutes a continuous conductive path and the bridging nanowire 7 is the only conductive path between the conductive layer 3 and the conductive layer 4 on either side of the groove, as shown in figure 6.
When the bridged gallium nitride nanowire is excited by external gas, pressure, strain, temperature or light intensity, the electrical characteristics (such as resistance) of the nanowire can be changed, so that the function of the device is realized.
Example 2
S1, an n-type silicon conductive layer 2 is grown on the surface of the quartz substrate 1 (insulating substrate) by magnetron sputtering coating, as shown in fig. 1. The thickness of the conductive layer 2 is 0.1 to 5 μm.
S2, preparing a groove structure on the surface of the substrate by using a mechanical cutting (i.e. mechanical scratching) process to separate the silicon conductive layer, and forming the source electrode 3 and the drain electrode 4 of the nanowire, as shown in fig. 2.
S3, placing quartz fibers (the diameter of the fibers is smaller than the width of the grooves) in the grooves as sacrificial strips 6, as shown in fig. 7.
S4 followed by attaching gold particles 5 on the conductive layer sidewalls for guiding the nanowire 7 growth as shown in fig. 8.
S5, growing the gaas nanowire 7 on the sidewall of the conductive layer by using molecular beam epitaxy, so that the top of the nanowire 7 meets and bonds with the conductive layer on the other side, i.e. bridges the nanowire 7, and at the same time of growing the nanowire, gaas deposit 8 is also generated in the groove, and due to the shielding of the sacrificial strip 6, a partial region of the bottom of the groove is free of the deposit 8, as shown in fig. 9.
S6, the sacrificial strips 6 are drawn out, and the deposits 8 attached to the surfaces of the sacrificial strips are also drawn out of the grooves. At this point, at the bottom of the groove, the deposit 8 no longer constitutes a continuous conductive path, and therefore the bridging nanowire 7 is the only conductive path between the conductive layer 3 and the conductive layer 4 on both sides of the groove, as shown in fig. 10.
Example 3
S1, growing an n-type silicon conductive layer 2 on the surface of a conductive silicon substrate 1 (such as an n-type silicon substrate) by magnetron sputtering coating, as shown in fig. 1. The thickness of the conductive layer 2 is 0.1 to 5 μm.
S2, preparing a groove structure on the surface of the conductive silicon substrate 1 (such as an n-type silicon substrate) by using a chemical etching process, wherein two sides of the groove structure are used as the source electrode 3 and the drain electrode 4 of the nanowire, as shown in fig. 2.
S3 followed by attaching catalyst particles 5 on the conductive layer sidewalls for guiding the growth of the nanowire 7 as shown in fig. 11. The number of catalyst particles is preferably between 1 and 1000.
S4, growing a silicon nanowire 7 on the sidewall of the groove by chemical vapor deposition, and as the nanowire grows, the top of the nanowire meets and bonds with the conductive layer on the other side-i.e., bridges the nanowire 7. At the same time as the nanowire grows, silicon deposits 8 are also formed at the bottom and sidewalls of the recess, as shown in fig. 12.
S5, the substrate 1 is fixed to another substrate 10 (i.e., the insulating substrate 10), as shown in fig. 13.
S6, forming a groove through the silicon substrate 1 and the deposit 8 on the back of the groove structure, so that the deposit 8 on both sides of the groove 11 is isolated, so that the electrical interconnection on both sides of the groove structure depends only on the bridging nanowire, as shown in fig. 14.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (8)
1. A preparation method of a nanowire device based on bridging growth is characterized by comprising the following steps: the method comprises the following steps:
s1, depositing a conductive layer on the surface of the substrate;
s2, preparing a groove structure penetrating through the conducting layer on the insulating substrate with the conducting layer by a chemical etching, laser ablation or mechanical cutting method so as to form a source electrode and a drain electrode which are mutually insulated on two sides of the groove structure;
the preparation method also comprises the following steps:
s3, arranging a sacrificial layer or a sacrificial strip at the bottom of the groove structure;
s4, attaching catalyst particles on the source electrode and/or the drain electrode, wherein the catalyst particles are used for guiding the growth of the nanowires;
s5, growing a nanowire on the side wall of the source electrode and/or the drain electrode, wherein the nanowire is connected with the source electrode and the drain electrode;
s6, removing the sacrificial layer or the sacrificial strip arranged at the bottom of the groove structure and the deposit formed during the growth of the nanowire deposited at the top of the sacrificial layer or attached at the top of the sacrificial strip, so that the deposit formed during the growth of the nanowire at the two sides of the groove is isolated, and the electrical interconnection at the two sides of the groove structure is only dependent on the bridging nanowire.
2. The method of claim 1, wherein the nanowire device is prepared by a bridge growth method, comprising the following steps: in S3, if a sacrificial layer is disposed at the bottom of the groove structure, the sacrificial layer deposited outside the bottom of the groove structure needs to be removed by photolithography or etching before proceeding to S4.
3. The method of claim 1, wherein the nanowire device is prepared by a bridge growth method, comprising the following steps: in S3, if a sacrificial layer is disposed at the bottom of the groove structure, in S6, the sacrificial layer at the bottom of the groove structure is removed by selective chemical etching, and the suspended sediment at the top of the groove structure is removed by ultrasonic vibration; if a sacrificial strip is disposed at the bottom of the groove structure in S3, the sacrificial strip at the bottom of the groove structure and the deposit attached to the top of the sacrificial strip are directly extracted by chemical etching or by applying an external force in S6.
4. A method for the preparation of a nanowire device based on bridging growth according to any of claims 1-3, characterized in that: the sacrificial layer is made of a material which can be corroded and resists high temperature.
5. The method of claim 4, wherein the nanowire device is prepared by a bridge growth method, and the method comprises the following steps: the sacrificial layer is a silicon oxide layer.
6. A method for the preparation of a nanowire device based on bridging growth according to any of claims 1-3, characterized in that: the sacrificial strips are made of high-temperature resistant materials.
7. The method of claim 6, wherein the nanowire device is prepared by a bridge growth method, comprising the following steps: the sacrificial strips are quartz fibers.
8. A method for the preparation of a nanowire device based on bridging growth according to any of claims 1-3, characterized in that: the catalyst particles are one or more of gold, nickel, iron, gold-nickel alloy, gallium, indium or gallium nitride.
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