CN107331705A - A kind of nano-wire devices based on bridge joint growth and preparation method thereof - Google Patents
A kind of nano-wire devices based on bridge joint growth and preparation method thereof Download PDFInfo
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- CN107331705A CN107331705A CN201710532974.8A CN201710532974A CN107331705A CN 107331705 A CN107331705 A CN 107331705A CN 201710532974 A CN201710532974 A CN 201710532974A CN 107331705 A CN107331705 A CN 107331705A
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- 229910002601 GaN Inorganic materials 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
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- 239000010980 sapphire Substances 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
Abstract
Comprise the following steps the present invention relates to a kind of preparation method of the nano-wire devices based on bridge joint growth：Groove structure is prepared on the substrate with conductive layer, and nano wire is grown in recess sidewall, nano wire is bridged the conductive layer of groove both sides, while the growth course can also produce deposit in groove；By setting sacrifice layer in groove structure or sacrificing bar, or, groove is opened up by the back in groove structure, so that the deposit of groove structure both sides mutually completely cuts off, the deposit problems brought with eliminating in nanowire growth process, so that the electricity interconnection of groove structure both sides is only dependent upon bridge joint nano wire.Its advantage is：The present invention solves the deposit problems in bridge joint nanowire growth process further groove, ensures that the electricity interconnection of groove both sides is only determined by bridge joint nano wire, eliminates influence of the conductive deposit to nano-wire devices, improve the performance of bridge joint nano-wire devices.
Description
Technical field
The present invention relates to nano-wire devices field, more particularly to a kind of nano-wire devices and its preparation based on bridge joint growth
Method.
Background technology
Nanometer technology is considered as one of three big science technologies of 21 century.Wherein, nano wire is because it is unique one-dimensional
Quantum structure, it is considered to be the basic structure of micro-nano electronic device and photonic device.
Although nano wire has important application prospect, the practical and industrialization of nano-wire devices also needs to solve
A series of problems, key issue therein is how extremely very thin nano wire to be manipulated, assembled and processed.At present, receive
The preparation of nanowire device, such as Nanotechnology, disclosed in 24 (2013) 245306 paper, are generally included following complicated
Step：1. in Grown nano wire；2. nano wire is stripped down from substrate, another substrate surface is transferred to, and in fact
Existing parallel ordered arrangement；3. plate metal electrode at the two ends of nano wire.
However, above-mentioned preparation method has the following disadvantages：Processing step is complicated；The steps such as the stripping and arrangement of nano wire,
Need to use various chemical reagent, (or damage) nanowire surface can be polluted；And due to belonging between metal electrode and nano wire
In physical contact, the contact area very little of nano wire and electrode, hence in so that contact characteristicses between metal electrode and nano wire
Very poor, attachment is insecure.
Therefore, it has been proposed that the bridge joint growth technique of nano wire, such as：ZL 201110144804.5；
A kind of bridge joint growth technique of nano wire is disclosed in Nanotechnology, 15 (2004) L5-L8：In the growth of nano wire
In journey (above-mentioned steps 1), at the same realize nano wire arrangement and nano wire and electrode between interconnection so that simplify device
Preparation.But these methods have the following disadvantages：1. needs prepare semiconductor step (or groove), the step on substrate
(or groove) must be electrically isolated (i.e. using electric insulation layer) between substrate；2. this three-decker (step, electric insulation layer, with
And substrate) preparation, it is necessary to using the techniques such as bonding chip or ion implanting substrate interior formation electricity isolated layer, preparation technology
It is complicated.
Simplify preparation technology in order to further, applicant discloses one kind in Chinese patent application 201610213762.9
Nano-wire devices based on bridge joint growth and preparation method thereof, it is that conductive layer is plated in the dielectric substrate with groove structure,
Three-decker is reduced to double-layer structure (i.e. conductive layer and dielectric substrate), to reduce preparation difficulty.
But, the bridge joint growth protocols of above two nano wire all have a problem that：In nanowire growth, groove
Bottom can also deposit material, so that the electrical insulation characteristics of groove both sides are destroyed (equivalent at the two ends of bridge joint nano wire
Between generate by-pass current).
In summary, the deposit problems of bottom portion of groove how are solved, high-performance, the nano wire device of low cost is prepared
Part, is the problem of those skilled in the art needs to be solved badly.
The content of the invention
Received it is an object of the invention to overcome the deficiencies of the prior art and provide a kind of bridge joint simple in construction, with low cost
Nanowire device and preparation method thereof.
The invention provides a kind of nano-wire devices based on bridge joint growth, its technical scheme is：
A kind of nano-wire devices based on bridge joint growth, including it is provided with the substrate, conductive layer and nano wire of groove structure,
It is characterized in that：The conductive layer that the conductive layer is arranged on the both sides of the groove structure, side wall is used as nano-wire devices
Source electrode, conductive layer on opposite side wall is as the drain electrode of nano-wire devices, and the source electrode passes through with the drain electrode
The nano wire connection；The bottom of the groove structure is provided with sacrifice layer or sacrifices bar, or, the back of the groove structure is set
It is equipped with the groove through substrate and deposit so that the deposit of groove both sides mutually completely cuts off.
A kind of nano-wire devices based on bridge joint growth that the present invention is provided can also have following attached technical scheme：
Wherein, the sacrifice layer selection can be corroded and resistant to elevated temperatures material.
Wherein, the sacrifice layer is silicon oxide layer.
Wherein, the sacrifice bar is resistant to elevated temperatures material.
Wherein, the sacrifice bar is quartz fibre.
Wherein, the one or both ends of the nano wire are provided with catalyst granules with conductive coating structure junction, described to urge
Catalyst particles are the one or more in gold, nickel, iron, golden nickel alloy, gallium, indium or gallium nitride.
Present invention also offers a kind of preparation method of the nano-wire devices based on bridge joint growth, its technical scheme is：
A kind of preparation method of the nano-wire devices based on bridge joint growth, it is characterised in that：Comprise the following steps：
S1, the surface deposition conductive layer in substrate；
S2, prepared in the dielectric substrate with conductive layer by chemical etching, laser ablation or the method for machine cut
The groove structure of conductive layer is penetrated, to form the source electrode and drain electrode of mutually insulated in the both sides of groove structure；
S3, bottom setting sacrifice layer or sacrifice bar in groove structure；
S4, the attached catalyst particle in the source electrode and/or the drain electrode, the catalyst granules are used to guide
The growth of the nano wire；
S5, nano wire is grown on the wall of conductive layer side, the nano wire is connected with the source electrode and the drain electrode；
S6, removal are arranged on the sacrifice layer of groove structure bottom or sacrifice bar and be deposited at the top of sacrifice layer or attachment
The deposit at the top of bar is being sacrificed so that the deposit isolation of groove both sides is opened, so that the electricity interconnection of the groove structure both sides
It is only dependent upon bridge joint nano wire.
A kind of preparation method for nano-wire devices based on bridge joint growth that the present invention is provided can also have following attached skill
Art scheme：
Wherein, in S3, if being provided that sacrifice layer in the bottom of groove structure, need before S4 is carried out, will be heavy
Product is removed in the sacrifice layer outside bottom portion of groove by way of photoetching or corrosion.
Wherein, in S3, if being provided that sacrifice layer in the bottom of groove structure, in S6, selective chemical is passed through
The mode of corrosion removes the sacrifice layer of groove structure bottom, and the heavy of groove structure top suspension is removed by way of ultrasonic vibration
Product thing；In S3, if being provided that sacrifice bar in the bottom of groove structure, in S5, by chemical attack or by applying
The sacrifice bar that the mode of external force directly extracts groove structure bottom and the deposit being attached at the top of sacrifice layer.
Present invention also offers the preparation method of another nano-wire devices based on bridge joint growth, its technical scheme is：
S1, substrate surface deposit conductive layer or substrate itself it is conductive；
S2, groove structure prepared on substrate by chemical etching, laser ablation or the method for machine cut, with groove knot
The conductive layer of structure both sides is used as source electrode and drain electrode；
S3, the attached catalyst particle in the source electrode and/or the drain electrode, the catalyst granules are used to guide
The growth of the nano wire；
S4, nano wire is grown on the wall of conductive layer side, the nano wire is connected with the source electrode and the drain electrode；
S5, by the transfer of the substrate with groove structure after step S4 processing fixed in another dielectric substrate；
S6, open up at the back of groove structure groove through substrate and deposit so that the deposit of groove both sides every
Open absolutely, so that the electricity interconnection of the groove structure both sides is only dependent upon bridge joint nano wire.
The implementation of the present invention includes following technique effect：
The preparation method for the nano-wire devices that the present invention is provided, by setting sacrifice layer in groove structure bottom, sacrificing bar
Or back fluting, to remove the deposit that groove internal cause nanowire growth is formed, ensure that the electricity of groove structure both sides
Interconnection is only determined by bridge joint nano wire, eliminates influence of the conductive deposit to nano-wire devices, improves bridge joint nano wire device
The performance of part.And the groove structure with nano wire can be transferred on other substrates (such as flexible substrate), be answered with increasing
Flexibility.
Brief description of the drawings
Accompanying drawing, it is incorporated into and turns into the part of this specification, demonstrates embodiments of the invention, and with it is foregoing
Summary and following detailed description explain the principle of the present invention together.
Fig. 1 has carried out the substrate after S1 for embodiments of the invention 1, embodiment 2 and embodiment 3.
Fig. 2 has carried out the substrate after S2 for embodiments of the invention 1, embodiment 2 and embodiment 3.
Fig. 3 has carried out the substrate after S3 for embodiments of the invention 1.
Fig. 4 has carried out the substrate after S4 for embodiments of the invention 1.
Fig. 5 has carried out the substrate after S5 for embodiments of the invention 1.
Fig. 6 has carried out the substrate after S6 for embodiments of the invention 1.
Fig. 7 has carried out the substrate after S3 for embodiments of the invention 2.
Fig. 8 has carried out the substrate after S4 for embodiments of the invention 2.
Fig. 9 has carried out the substrate after S5 for embodiments of the invention 2.
Figure 10 has carried out the substrate after S6 for embodiments of the invention 2.
Figure 11 has carried out the substrate after S3 for embodiments of the invention 3.
Figure 12 has carried out the substrate after S4 for embodiments of the invention 3.
Figure 13 has carried out the substrate after S5 for embodiments of the invention 3.
Figure 14 has carried out the substrate after S6 for embodiments of the invention 3
1st, substrate；2nd, conductive layer；3rd, source electrode；4th, drain electrode；5th, catalyst granules；6th, bar is sacrificed；7th, nano wire；8th, sink
Product thing；9th, sacrifice layer；10th, dielectric substrate；11st, groove.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing, it should be pointed out that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
Referring to Fig. 1 to Figure 10, a kind of nano-wire devices based on bridge joint growth of the present embodiment, including fluted knot is set
Dielectric substrate 1, electrically conductive layer 2 and the nano wire 7 of structure.On substrate during etched recesses structure, conductive layer is divided in groove knot
Conductive layer in the both sides of structure, a recess sidewall is as the source electrode 3 of nano-wire devices, the conduction in another recess sidewall
Layer is as the drain electrode 4 of nano-wire devices, and source electrode 3 is connected with drain electrode 4 by nano wire 7；The bottom of groove structure is set
There is sacrifice layer 9 or sacrifice bar 6, the sacrifice layer 9 or sacrifice bar 6 are used for removing and be deposited on when growing nano wire in groove structure
Deposit 8；Or the back of the groove structure is provided through the groove 11 of substrate and deposit so that the both sides of groove 11
Deposit 8 mutually completely cuts off.Nano wire 7 is disposably to grow whole obtained nano wire.Nano wire and conductive layer in the present embodiment
Combination, be the chemical bonds formed in nanowire growth, with more firm adhesion and preferably electric conductivity.
Referring to Fig. 1 to Figure 10, the present embodiment also proposed a kind of preparation method of the nano-wire devices based on bridge joint growth,
It can realize in the following manner：
S1, the surface of substrate 1 deposit conductive layer 2, as shown in Figure 1.The dielectric substrate 1 preferably is selected from glass, quartz, Yi Jilan
The materials such as jewel.The preferred autoxidisable substance of conductive layer 2, nitride (such as TiN, GaN, AlGaN and InGaN), metal or carbon
In one kind or appoint it is several.
S2, using chemical etching, laser ablation or the method for machine cut, prepare groove structure in substrate surface.This is recessed
Slot structure penetrates conductive layer 2 and goed deep into inside substrate 1, so that conductive layer 2 is divided into two parts-- difference of mutually insulated
As source electrode 3 and the drain electrode 4 of nano-wire devices, as shown in Figure 2.
S3, in bottom portion of groove grow sacrifice layer 9, as shown in figure 3, sacrifice layer outside bottom portion of groove can by photoetching with
The method of corrosion is removed；In this step, can also with sacrifice bar 6 substitution sacrifice layer 9, i.e., in groove placement quartz fibre as
Bar 6 is sacrificed, as shown in Figure 7.
S4, the attached catalyst particle 5 on the wall of conductive layer side, for guiding nano wire 7 to grow, as shown in Fig. 3,8.This is urged
Catalyst particles 5 preferably are selected from gold, nickel, iron, golden nickel alloy, gallium, indium and gallium nitride material.Catalyst granules 5 can be attached to and lead
Any one or both sides of electric layer side wall.
S5, the growth nano wire 7 on the wall of conductive layer side, with the growth of nano wire 7, the top of nano wire 7 and opposite side
Conductive layer meet and combine-- bridge nano wire 7, this adhesion is the chemical bond force between solid.Growth is received
While rice noodles, deposit 8 can be also formed in bottom portion of groove and side wall, as shown in Figure 5, Figure 9.The material of the deposit 8 is with receiving
The material of rice noodles 7 is close (because the deposit 8 with nano wire 7 is formed simultaneously in growth course).Therefore, deposit 8
Also it is conductive, the by-pass current of nano wire 7 can be caused to reduce the performance of nano-wire devices, by-pass current such as Fig. 5, figure
Shown in arrow in 9.
S6, using selective chemical corrosion sacrifice layer 9 is removed, because deposit 8 is attached to the surface of sacrifice layer 9,
When sacrifice layer 9 is corroded removing, deposit 8 then forms hanging open structure, therefore can be incited somebody to action by methods such as ultrasonic vibrations
Hanging deposit 8 is removed.For another mode ,-- uses the scheme for sacrificing bar 6, can removed by chemical attack
Go to sacrifice bar 6, sacrifice bar 6 can also be directly detached by applying external force, while the deposit 8 that top is adhered to is taken away.Now,
Deposit 8 in groove is removed by all (or part), and deposit 8 does not reconstruct continuous conductive channel, and bridge joint nano wire 7 is
Unique conductive passage between the source electrode 3 and drain electrode 4 of groove both sides, as shown in Fig. 5,9.
The growing method of nano wire 7 preferably is selected from chemical vapour deposition technique, molecular beam epitaxy, electrochemical growth method, electrostatic
Spin processes or and the method such as hydrothermal synthesis method.The preferred tin indium oxide of nano wire material, titanium nitride, gallium nitride, indium gallium nitride, nitrogen
Change the materials such as gallium aluminium, aluminium arsenide gallium indium, silicon, germanium, SiGe, carborundum or AlGaInP.
It is following to be used as specific example using three embodiments：
Embodiment 1
S1, the surface in sapphire (i.e. alpha-alumina crystals) substrate 1 (dielectric substrate), using chemical vapor deposition method,
One layer of n-type gallium nitride conductive layer 2 is grown, as shown in Figure 1.The thickness of the conductive layer 2 is between 1~20 micron.
S2, using chemical etching technology, prepare groove structure in substrate surface, the groove structure is by gallium nitride conductive layer 2
Separate, as source electrode 3 and the drain electrode 4 of nano wire, (be electrically insulated as shown in Figure 2 between source electrode and drain electrode).
S3, in substrate surface growing silicon oxide layer as sacrifice layer, the silicon dioxide sacrificial layer outside groove is passed through into photoetching
Removed with the method for corrosion, only stay the silicon dioxide sacrificial layer 9 of bottom portion of groove, as shown in Figure 3.
S4, then the attachment nickel Au catalyst particle 5 on the wall of conductive layer side, for guiding nano wire 7 to grow, such as Fig. 4 institutes
Show.Between the quantity of the catalyst granules preferably 1 to 1000.
S5, using metal-organic chemical vapor deposition equipment, the growing gallium nitride nano wire 7 on the wall of conductive layer side, with receiving
The growth of rice noodles, the top of nano wire and the conductive layer of opposite side meet and combine-- bridge nano wire 7.Receiving
While nanowire growth, gallium nitride deposition thing 8 can be also formed in bottom portion of groove and side wall, as shown in Figure 5.
S6, the substrate that will grow nano wire, are placed in hydrofluoric acid solution and corrode, silicon dioxide sacrificial layer 9 is corroded into removing.
Due to hydrofluoric acid solution have to silica selective corrosion (i.e. hydrofluoric acid corrosion oxidation silicon, do not corrode Sapphire Substrate with
Gallium nitride nano-wire) so that the gallium nitride deposition thing 8 for being attached to silicon oxide surface is in vacant state, and the deposit is
Loose porous state, therefore can be removed hanging gallium nitride deposition thing 8 by ultrasonic vibration.Now, deposit 8 is no longer
Continuous conductive channel is constituted, bridge joint nano wire 7 is the unique conductive passage between the conductive layer 3 of groove both sides and conductive layer 4,
As shown in Figure 6.
When the gallium nitride nano-wire of bridge joint, when being encouraged by ambient atmos, pressure, strain, temperature or light intensity, nano wire
Electrology characteristic (such as resistance) can change, so as to realize the function of device.
Embodiment 2
S1, the surface in quartz substrate 1 (dielectric substrate), using magnetron sputtering plating, grow one layer of n-type silicon conductive layer 2,
As shown in Figure 1.The thickness of the conductive layer 2 is between 0.1~5 micron.
S2, using machine cut (i.e. mechanical scratch) technique, prepare groove structure so that silicon conducting layer point in substrate surface
Separate, form the source electrode 3 and drain electrode 4 of nano wire, as shown in Figure 2.
S3, in groove quartz fibre (fibre diameter be less than recess width) is placed as bar 6 is sacrificed, as shown in Figure 7.
S4, then the attachment gold grain 5 on the wall of conductive layer side, for guiding nano wire 7 to grow as shown in Figure 8.
S5, using molecular beam epitaxy, GaAs nano wire 7 is grown on the wall of conductive layer side so that the top of nano wire 7 with
The conductive layer of opposite side meet and combine-- bridge nano wire 7, while nanowire growth, in groove
GaAs deposit 8 can be produced, due to sacrificing blocking for bar 6, the subregion of bottom portion of groove does not have deposit 8, such as Fig. 9 institutes
Show.
S6, bar 6 will be sacrificed extract out, be attached to and sacrifice the deposit 8 on bar surface and be also pulled out groove therewith.Now, recessed
Trench bottom, deposit 8 does not reconstruct continuous conductive channel, therefore bridge joint nano wire 7 is the conductive layer 3 and conduction of groove both sides
Unique conductive passage between layer 4, as shown in Figure 10.
Embodiment 3
S1, the surface in conductive silicon substrate 1 (such as n-type silicon substrate), using magnetron sputtering plating, grow one layer of n-type silicon
Conductive layer 2, as shown in Figure 1.The thickness of the conductive layer 2 is between 0.1~5 micron.
S2, using chemical etching technology, prepare groove structure on conductive silicon substrate 1 (such as n-type silicon substrate) surface, this is recessed
The both sides of slot structure as nano wire source electrode 3 and drain electrode 4, as shown in Figure 2.
S3, then the attached catalyst particle 5 on the wall of conductive layer side, for guiding nano wire 7 to grow, as shown in figure 11.
Between the quantity of the catalyst granules preferably 1 to 1000.
S4, using chemical vapor deposition, in recess sidewall grow silicon nanowires 7, with the growth of nano wire, nano wire
Top and opposite side conductive layer meet and combine-- bridge nano wire 7.While nanowire growth,
Bottom portion of groove can also form silicon deposits 8 with side wall, as shown in figure 12.
S5, by substrate 1 be fixed to another substrate 10 (i.e. dielectric substrate 10) on, as shown in figure 13.
S6, open up at the back of groove structure groove through silicon substrate 1 and deposit 8 so that the both sides of groove 11 it is heavy
The product isolation of thing 8 is opened, so that the electricity interconnection of the groove structure both sides is only dependent upon bridge joint nano wire, as shown in figure 14.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than to present invention guarantor
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (10)
1. a kind of nano-wire devices based on bridge joint growth, including the substrate, conductive layer and nano wire of groove structure are provided with, its
It is characterised by：The conductive layer that the conductive layer is arranged on the both sides of the groove structure, side wall is used as nano-wire devices
Conductive layer on source electrode, opposite side wall is as the drain electrode of nano-wire devices, and the source electrode and the drain electrode pass through institute
State nano wire connection；The bottom of the groove structure is provided with sacrifice layer or sacrifices bar, or, the back of the groove structure is set
There is the groove through substrate and deposit so that the deposit of the groove structure both sides mutually completely cuts off.
2. a kind of nano-wire devices based on bridge joint growth according to claim 1, it is characterised in that：The sacrifice layer choosing
Selecting can be corroded and resistant to elevated temperatures material.
3. a kind of nano-wire devices based on bridge joint growth according to claim 2, it is characterised in that：The sacrifice layer is
Silicon oxide layer.
4. a kind of nano-wire devices based on bridge joint growth according to claim 1, it is characterised in that：It is described sacrifice bar be
Resistant to elevated temperatures material.
5. a kind of nano-wire devices based on bridge joint growth according to claim 4, it is characterised in that：It is described sacrifice bar be
Quartz fibre.
6. a kind of nano-wire devices based on bridge joint growth according to claim 1, it is characterised in that：The recess sidewall
Be provided with catalyst granules, the catalyst granules be gold, nickel, iron, golden nickel alloy, gallium, indium or one kind in gallium nitride or
It is several.
7. a kind of preparation method of the nano-wire devices based on bridge joint growth, it is characterised in that：Comprise the following steps：
S1, the surface deposition conductive layer in substrate；
S2, prepared and penetrate in the dielectric substrate with conductive layer by chemical etching, laser ablation or the method for machine cut
The groove structure of conductive layer, to form the source electrode and drain electrode of mutually insulated in the both sides of groove structure；
The preparation method is further comprising the steps of：
S3, bottom setting sacrifice layer or sacrifice bar in groove structure；
S4, the attached catalyst particle in the source electrode and/or the drain electrode, the catalyst granules are used to guide described
The growth of nano wire；
S5, nano wire is grown on the wall of conductive layer side, the nano wire is connected with the source electrode and the drain electrode；
S6, removal are arranged on the sacrifice layer of groove structure bottom or sacrifice bar and be deposited at the top of sacrifice layer or be attached to sacrificial
Deposit at the top of domestic animal bar so that the deposit isolation of groove both sides is opened, so that the electricity interconnection of the groove structure both sides only takes
Certainly in bridge joint nano wire.
8. a kind of preparation method of nano-wire devices based on bridge joint growth according to claim 7, it is characterised in that：
In S3, if being provided that sacrifice layer in the bottom of groove structure, need before S4 is carried out, groove structure bottom will be deposited on
Outside sacrifice layer removed by way of photoetching or corrosion.
9. a kind of preparation method of nano-wire devices based on bridge joint growth according to claim 7, it is characterised in that：
In S3, if being provided that sacrifice layer in the bottom of groove structure, in S6, removed by way of selective chemical corrodes recessed
The sacrifice layer of slot structure bottom, removes the deposit suspended at the top of groove structure by way of ultrasonic vibration；In S3, if
The bottom of groove structure is provided that sacrifice bar, then in S6, is directly taken out by way of chemical attack or by applying external force
The deposit for taking the sacrifice bar of groove structure bottom and being attached at the top of sacrifice bar.
10. a kind of preparation method of the nano-wire devices based on bridge joint growth, it is characterised in that：Comprise the following steps：
S1, substrate surface deposit conductive layer or substrate itself it is conductive；
S2, groove structure, groove structure both sides prepared on substrate by chemical etching, laser ablation or the method for machine cut
Conductive region, respectively as source electrode and drain electrode；
S3, the attached catalyst particle on the side wall of the source electrode and/or the drain electrode, the catalyst granules are used to draw
Lead the growth of the nano wire；
S4, nano wire is grown on the wall of conductive layer side, the nano wire is connected with the source electrode and the drain electrode；
S5, by the transfer of the substrate with groove structure after step S4 processing fixed in another dielectric substrate；
S6, open up at the back of groove structure groove through substrate and deposit so that the deposit isolation of groove both sides is opened,
So that the electricity interconnection of the groove structure both sides is only dependent upon bridge joint nano wire.
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