CN108666397A - A kind of ultraviolet LED thin-film LED and preparation method thereof - Google Patents
A kind of ultraviolet LED thin-film LED and preparation method thereof Download PDFInfo
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- CN108666397A CN108666397A CN201810718669.2A CN201810718669A CN108666397A CN 108666397 A CN108666397 A CN 108666397A CN 201810718669 A CN201810718669 A CN 201810718669A CN 108666397 A CN108666397 A CN 108666397A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a kind of ultraviolet LED thin-film LEDs and preparation method thereof, including：First substrate；Light emitting epitaxial layer positioned at one surface of the first substrate, light emitting epitaxial layer include：Positioned at the N-type epitaxy layer of the first substrate surface, it is located at the cylinder extension array that N-type epitaxy layer deviates from the first one side of substrate, and each cylinder extension includes multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of vertical n-type epitaxial layer superposition successively；Deviate from the reflecting layer of the first one side of substrate positioned at light emitting epitaxial layer；Deviate from the N-type electrode structure of light emitting epitaxial layer side positioned at the first substrate, and deviates from the P-type electrode structure of the first one side of substrate positioned at reflecting layer.Due to being mutually communicated by air with gap between adjacent column extension, and then total reflection between two kinds of interfaces of cylinder extension array and outside air and light scattering effect can be passed through, the light extraction efficiency and heat dissipation effect for enhancing UV LED chip, improve the performance of UV LED chip.
Description
Technical field
The present invention relates to ultraviolet LED (Light Emitting Diode, light emitting diode) chip technology fields, more have
Body says, is related to a kind of ultraviolet LED thin-film LED and preparation method thereof.
Background technology
With the development of LED core chip technology, the output performance of light-emitting diode chip for backlight unit it is continuous promotion and its production cost
Continuous reduction, compared with traditional ultraviolet source at present, UV LED chip has theoretical service life length, high efficiency, stabilization
Reliably, brightness uniformity and without noxious material the advantages that, in the extensive of the fields such as sterilizing, photocuring and general illumination
Using also increasingly being paid close attention in recent years by semiconductor lighting industry.But at present in patterned substrate template, extension material
During material growth etc., due to structure design is unreasonable, in LED epitaxial wafer between interior contact layer material and epitaxial layer structure
Light absorption phenomenon, and lead to that the light efficiency of existing UV LED chip is poor, brightness is not high.
Invention content
In view of this, the present invention provides a kind of ultraviolet LED thin-film LED and preparation method thereof, light emitting epitaxial layer packet
Included cylinder extension array, and each cylinder extension include successively the multiple quantum well active layer of the vertical N-type epitaxy layer superposition,
Electronic barrier layer, p-type epitaxial layer and p-type coating, wherein due to mutual by air with gap between adjacent column extension
Perforation, and then can be increased by total reflection between two kinds of interfaces of cylinder extension array and outside air and light scattering effect
The light extraction efficiency and heat dissipation effect of strong UV LED chip, improve the performance of UV LED chip.
To achieve the above object, technical solution provided by the invention is as follows：
A kind of ultraviolet LED thin-film LED, including：
First substrate；
Light emitting epitaxial layer positioned at one surface of the first substrate, the light emitting epitaxial layer include：Positioned at first lining
The N-type epitaxy layer of bottom surface is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and each
Cylinder extension includes multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of the vertical N-type epitaxy layer superposition successively；
Deviate from the reflecting layer of first one side of substrate positioned at the light emitting epitaxial layer；
And deviate from the N-type electrode structure of the light emitting epitaxial layer side positioned at first substrate, and positioned at described anti-
Penetrate the P-type electrode structure that layer deviates from first one side of substrate.
Optionally, further include transition structure layer, the transition between first substrate and the light emitting epitaxial layer
Structure sheaf includes：
Positioned at the buffer layer of first substrate surface；
And deviate from the superlattice layer of first one side of substrate positioned at the buffer layer.
Optionally, the buffer layer is BN buffer layers.
Optionally, the cylinder extension further includes being located at p-type of the p-type epitaxial layer away from first one side of substrate to cover
Cap rock.
Optionally, further include transparency conducting layer between the reflecting layer and the light emitting epitaxial layer.
Optionally, further include conductive membrane layer between the reflecting layer and the P-type electrode structure.
Optionally, the conductive membrane layer is graphene conductive film layer.
Optionally, the N-type electrode structure includes：
Deviate from the N-type ohmic contact layer of the light emitting epitaxial layer side positioned at first substrate, wherein the N-type Europe
Nurse contact layer is connected by penetrating at least one electrode bolt of first substrate with the N-type epitaxy layer, and the electrode
The side wall of bolt has separation layer；
And deviate from the N-type electrode of first one side of substrate positioned at the N-type ohmic contact layer；
And the P-type electrode structure includes：
Deviate from the p-type ohmic contact layer of first one side of substrate positioned at the reflecting layer；
And deviate from the P-type electrode of first one side of substrate positioned at the p-type ohmic contact layer.
Correspondingly, the present invention also provides a kind of production methods of ultraviolet LED thin-film LED, including：
One first substrate is provided；
Light emitting epitaxial layer is formed on one surface of the first substrate, the light emitting epitaxial layer includes：Positioned at first lining
The N-type epitaxy layer of bottom surface is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and each
Cylinder extension includes multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of the vertical N-type epitaxy layer superposition successively；
In the light emitting epitaxial layer reflecting layer is formed away from first one side of substrate；
N-type electrode structure is formed away from the light emitting epitaxial layer side in first substrate, and is carried on the back in the reflecting layer
P-type electrode structure is formed from first one side of substrate.
Optionally, the making of the light emitting epitaxial layer includes：
N-type epitaxy layer is formed in first substrate surface；
In the N-type epitaxy layer mask layer is formed away from first one side of substrate；
The spherical particle layer of single layer is deposited away from first one side of substrate in the mask layer；
To the spherical particle layer carry out predetermined process processing so that spherical particle layer spherical particle reduce and collapse for
Island protrusion；
Deviate from the first one side of substrate deposited metal film layer in the spherical particle layer；
The part that the metal film layer covers the island protrusion is removed, and retains the metal film layer positioned at adjacent
The part in gap between island protrusion；
Remove the island protrusion；
The part that the mask layer is not covered by the metal film layer is etched away, multiple cylindrical recesses are formed；
Remove the metal film layer；
Multiple quantum well active layer, electronic barrier layer and p-type epitaxial layer are sequentially depositing in the cylindrical recesses, to form group
At the cylinder extension of the cylinder extension array；
It removes the mask layer remainder and obtains the light emitting epitaxial layer.
Compared to the prior art, technical solution provided by the invention has at least the following advantages：
The present invention provides a kind of ultraviolet LED thin-film LEDs and preparation method thereof, including：First substrate；Positioned at institute
The light emitting epitaxial layer on one surface of the first substrate is stated, the light emitting epitaxial layer includes：Positioned at the N-type extension of first substrate surface
Layer is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and each cylinder extension includes successively
Multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of the vertical N-type epitaxy layer superposition；Positioned at the luminous extension
Layer deviates from the reflecting layer of first one side of substrate；And deviate from the N of the light emitting epitaxial layer side positioned at first substrate
Type electrode structure, and positioned at the reflecting layer away from the P-type electrode structure of first one side of substrate.
As shown in the above, technical solution provided by the invention, light emitting epitaxial layer include cylinder extension array, and every
One cylinder extension includes multiple quantum well active layer, electronic barrier layer and the p-type extension of the vertical N-type epitaxy layer superposition successively
Layer, wherein due to being mutually communicated by air with gap between adjacent column extension, and then cylinder extension array can be passed through
Total reflection between two kinds of interfaces of outside air and light scattering effect, enhance light extraction efficiency and the heat dissipation of UV LED chip
Effect improves the performance of UV LED chip.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of UV LED chip provided by the embodiments of the present application；
Fig. 2 is a kind of flow chart of the production method of UV LED chip provided by the embodiments of the present application；
Fig. 3-Fig. 6 is the corresponding structural schematic diagram of each step in Fig. 2；
Fig. 7-Figure 17 is the corresponding structural schematic diagram of each step of light emitting epitaxial layer production method.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, at present durings patterned substrate template, epitaxial material growth etc., since structure is set
Light absorption phenomenon unreasonable, in LED epitaxial wafer between interior contact layer material and epitaxial layer structure is counted, and leads to existing purple
The problems such as light efficiency of outer LED chip is poor, brightness is not high.
Based on this, the embodiment of the present application provides a kind of ultraviolet LED thin-film LED and preparation method thereof, and shine extension
Layer includes cylinder extension array, and each cylinder extension includes that vertically the multiple quantum wells of the N-type epitaxy layer superposition has successively
Active layer, electronic barrier layer, p-type epitaxial layer and p-type coating, wherein due to empty with gap between adjacent column extension
Gas is mutually communicated, and then can pass through total reflection between two kinds of interfaces of cylinder extension array and outside air and light scattering effect
It answers, enhances the light extraction efficiency and heat dissipation effect of UV LED chip, improve the performance of UV LED chip.To realize above-mentioned mesh
, technical solution provided by the embodiments of the present application is as follows, specifically combines Fig. 1 to Figure 17 to technical side provided by the embodiments of the present application
Case is described in detail.
Refering to what is shown in Fig. 1, be a kind of structural schematic diagram of ultraviolet LED thin-film LED provided by the embodiments of the present application,
Wherein, ultraviolet LED thin-film LED includes：
First substrate 100；
Light emitting epitaxial layer positioned at 100 1 surface of the first substrate, the light emitting epitaxial layer include：Positioned at described first
The N-type epitaxy layer 210 on 100 surface of substrate is located at the N-type epitaxy layer 210 outside the column of 100 side of the first substrate
Prolong array, and each cylinder extension includes the multiple quantum well active layer 221, electronics that the vertical N-type epitaxy layer 100 is superimposed successively
Barrier layer 222 and p-type epitaxial layer 223P；
Deviate from the reflecting layer 300 of 100 side of the first substrate positioned at the light emitting epitaxial layer；
And deviate from the N-type electrode structure 400 of the light emitting epitaxial layer side positioned at first substrate 100, and be located at
The reflecting layer 300 deviates from the P-type electrode structure 500 of 100 side of the first substrate.
As shown in the above, technical solution provided by the embodiments of the present application, light emitting epitaxial layer include cylinder extension battle array
Row, and each cylinder extension includes multiple quantum well active layer, electronic barrier layer and the P of the vertical N-type epitaxy layer superposition successively
Type epitaxial layer, wherein due to being mutually communicated by air with gap between adjacent column extension, and then can be by column outside
Prolong the total reflection between two kinds of interfaces of array and outside air and light scattering effect, enhances the light extraction efficiency of UV LED chip
And heat dissipation effect, improve the performance of UV LED chip.
Further, can also include more structures in order to optimize UV LED chip provided by the embodiments of the present application
Layer, is below described in detail more optimal UV LED chip provided by the embodiments of the present application.It specifically combines shown in Fig. 1,
It is provided by the present application also to be wrapped between first substrate 100 and the light emitting epitaxial layer 200 in one embodiment of the application
Transition structure layer is included, the transition structure layer includes：
Buffer layer 110 positioned at 100 surface of the first substrate；
And deviate from the superlattice layer 120 of 100 side of the first substrate positioned at the buffer layer 110.Optionally, originally
Apply for that the buffer layer 110 that embodiment provides can be BN (boron nitride) buffer layer.
In one embodiment of the application, the cylinder extension provided by the present application further includes being located at the p-type epitaxial layer 223
P-type coating 224 away from 100 side of the first substrate.
It is provided by the present application between the reflecting layer 300 and the light emitting epitaxial layer in one embodiment of the application
It further include transparency conducting layer 310.
It is provided by the present application to be located at the reflecting layer 300 and the P-type electrode structure 500 in one embodiment of the application
Between further include conductive membrane layer 320.Optionally, the conductive membrane layer 320 provided by the embodiments of the present application can be graphite
Alkene conductive membrane layer.
In one embodiment of the application, the N-type electrode structure 400 provided by the present application includes：
Deviate from the N-type ohmic contact layer 410 of the light emitting epitaxial layer side positioned at first substrate 100, wherein described
N-type ohmic contact layer 410 is by penetrating at least one electrode bolt 430 of first substrate 100 and the N-type epitaxy layer 210
It is connected, and the side wall of the electrode bolt 430 has separation layer 440；Wherein, the first substrate 100 and N-type epitaxy layer 210 it
Between also have other structures layer when, electrode bolt 430 equally penetrates the structure sheaf and is connected to N-type epitaxy layer 210；
And deviate from the N-type electrode 420 of 100 side of the first substrate positioned at the N-type ohmic contact layer 410；
And the P-type electrode structure 500 includes：
Deviate from the p-type ohmic contact layer 510 of 100 side of the first substrate positioned at the reflecting layer 300；
And deviate from the P-type electrode 520 of 100 side of the first substrate positioned at the p-type ohmic contact layer 510.
In one embodiment of the application, UV LED chip provided by the present application further includes having a passivation layer 130, passivation layer
130 coat UV LED chip exposed surface, and it is hollow out that passivation layer 130, which corresponds to P-type electrode 520 and the region of N-type electrode 420,
Area, P-type electrode 520 and N-type electrode 420 is exposed.
With reference to the production method and relevant drawings of UV LED chip, to ultraviolet LED core provided by the embodiments of the present application
Piece the relevant technologies are described in more detail.Refering to what is shown in Fig. 2, being a kind of ultraviolet LED vertical junction provided by the embodiments of the present application
The flow chart of the production method of structure chip, wherein the production method of ultraviolet LED thin-film LED includes：
S1, one first substrate is provided；
S2, light emitting epitaxial layer is formed on one surface of the first substrate, the light emitting epitaxial layer includes：Positioned at described first
The N-type epitaxy layer of substrate surface is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and every
One cylinder extension includes multiple quantum well active layer, electronic barrier layer and the p-type extension of the vertical N-type epitaxy layer superposition successively
Layer；
S3, in the light emitting epitaxial layer reflecting layer is formed away from first one side of substrate；
S4, N-type electrode structure is formed away from the light emitting epitaxial layer side in first substrate, and in the reflecting layer
P-type electrode structure is formed away from first one side of substrate.
In conjunction with shown in Fig. 3-Fig. 6, for the corresponding structural schematic diagram of each step in Fig. 2, illustrate in conjunction with each step counter structure
UV LED chip provided by the embodiments of the present application and preparation method thereof is described in detail in figure.
Refering to what is shown in Fig. 3, corresponding step S1, provides one first substrate 100.
In one embodiment of the application, the first substrate 100 provided by the present application can be Sapphire Substrate, can be c
The Sapphire Substrate in face.After obtaining the first substrate 100, the first substrate 100 can be cleaned, the pre- place such as high-temperature baking
Reason, to remove the pollutant on 100 surface of the first substrate.
And formed before light emitting epitaxial layer on the first substrate 100, transition can also be formed on the first substrate 100
Structure sheaf, wherein transition structure layer includes the buffer layer 110 sequentially formed and superlattice layer 120, specifically, traditional
Under experiment condition, using Ecr plasma sputtering equipment, selection first prepares buffer layer on the first substrate 100
110, wherein the selection thickness range of buffer layer 110 obtains BN for the BN materials of 10nm or so the heterojunction structure of (including 10nm) and delays
Layer 110 is rushed, BN buffer layers 110 are directly instead of AlN buffer layers prepared under traditional cryogenic conditions, with by selecting Gao Rong
The good BN materials of point, thermal stability effectively alleviate the stress between UV LED chip epitaxial layer structure as buffer layer,
Quality of materials and the rate of crystal cross growth in UV LED chip epitaxial layer structure are improved, and it is close to reduce dislocation simultaneously
Degree.
Then, using MOCVD device or MOVPE equipment, continue extension 0.1 successively on the surface based on BN buffer layers 110
The superlattice layer 120 of -1.4 microns of (including endpoint value) thickness of micron, superlattice layer can be AlN/AlGaN superlattice layers.Its
In, AlN/AlGaN superlattice layers are multicycle spaced distributed architecture, can preferably be arranged 20 periods, in each period
AlN/AlGaN superlattice structures include the AlN layers that thickness range is 20 nanometers -35 nanometers (including endpoint value) and thickness range is
The AlGaN layer of 20 nanometers -35 nanometers (including endpoint value).
Refering to what is shown in Fig. 4, corresponding step S2, light emitting epitaxial layer is formed on 100 1 surface of the first substrate, wherein the
One substrate, 100 surface is formed in transition structure layer, and light emitting epitaxial layer is formed in transition structure layer surface, the light emitting epitaxial layer packet
It includes：N-type epitaxy layer 210 on first substrate 100 is located at the N-type epitaxy layer 210 and deviates from first substrate
The cylinder extension array of 100 sides, and each cylinder extension includes the Multiple-quantum that the vertical N-type epitaxy layer 210 is superimposed successively
Trap active layer 221, electronic barrier layer 222 and p-type epitaxial layer 223.
In one embodiment of the application, after forming AlN/AlGaN superlattice layers 120, the temperature of consersion unit is risen rapidly
Height is to 1050 degrees Celsius -1100 degrees Celsius (including endpoint values) and maintains after stablizing, in the table of AlN/AlGaN superlattice layers 120
Extension N-type epitaxy layer 210 on face, wherein N-type epitaxy layer 210 can be N-type AlGaN layer, and the thickness model of N-type epitaxy layer 210
It encloses for 2 microns (including 2 microns) left and right.
Then, continue extension in N-type epitaxy layer 210, by combining the works such as photoetching, dry etching, wet etching
Skill technology forms cylinder extension array in N-type epitaxy layer 210, and has the air gap before adjacent column extension.Outside column
Prolong includes to sequentially form：Thickness is the multiple quantum well active layer 221 of 62.5nm or so (including 62.5nm), thickness 60nm
The electronic barrier layer and thickness of left and right (including 60nm) are the p-type epitaxial layer 223 of 10nm or so (including 10nm)；In addition, this Shen
Please the cylinder extension that provides of embodiment can also continue on p-type epitaxial layer 223 epitaxial thickness for 100nm or so (including
P-type coating 224 100nm), wherein p-type epitaxial layer 223 can be p-type AlGaN layer, and p-type coating 224 can be p-type
GaN coatings.Wherein, due to being mutually communicated by air with gap between adjacent column extension, and then column can be passed through
Total reflection between two kinds of interfaces of extension array and outside air and light scattering effect, enhance UV LED chip goes out light efficiency
Rate and heat dissipation effect improve the performance of UV LED chip.
The production method of light emitting epitaxial layer provided by the embodiments of the present application is retouched in more detail in conjunction with Fig. 7-Figure 17
It states, wherein Fig. 7-Figure 17 is the corresponding structural schematic diagram of each step of light emitting epitaxial layer production method.Wherein, the embodiment of the present application carries
The manufacturing process of the light emitting epitaxial layer supplied includes：
Refering to what is shown in Fig. 7, forming N-type epitaxy layer in first substrate surface.
It should be noted that it is formed with transition structure layer on the first substrate 100 that the embodiment of the present application carries, so, outside N-type
Prolong layer 210 to be formed on superlattice layer 120.
In one embodiment of the application, during hot conditions small preparation N-type epitaxy layer 210, it is contemplated that chip material
There is the reflections and absorption to light for material, and then can be combined with epitaxial layer structure surface reduction processing technology, to N-type extension
The surface of layer 210 carries out roughening treatment, enhances the reflective effect of light emitting epitaxial layer N-type epitaxy layer interface in vertical direction
Rate so that the light extraction efficiency of UV LED chip further increases, and improves the light output intensity of UV LED chip.
Refering to what is shown in Fig. 8, forming mask layer 1000 away from 100 side of the first substrate in the N-type epitaxy layer 210.
A kind of mask layer with specific thicknesses of uniform deposition in N-type epitaxy layer 210, wherein the material of mask layer can
SiO is commonly used to choose2Material.
Refering to what is shown in Fig. 9, the spherical particle of single layer is deposited away from 100 side of the first substrate in the mask layer 1000
Layer 2000.
In one embodiment of the application, spherical particle provided by the present application can be polystyrene spherical particle, it is preferred that
Spherical particle layer is the single layer structure that multiple spherical particles are formed, and each spherical particle and mask layer surface formed point contact,
And contacted between adjacent spherical particle, to obtain the polystyrene spherical stratum granulosum of uniform and single layer.
Refering to what is shown in Fig. 10, predetermined process processing is carried out to the spherical particle layer 2000, so that spherical particle layer 2000
Spherical particle reduce and collapse for island protrusion.
Heat pre-treatment can be carried out to polystyrene spherical stratum granulosum, in combination with ICP lithographic techniques so that polyphenyl second
Alkene spherical particle gradually fusing collapses and reduces so that between mask layer 1000 and polystyrene spherical particle forming face contact and
Enhance adhesive effect, also that is, it is in island convex shape that the gradual fusing of polystyrene spherical particle, which is collapsed and reduced,；Due to spherical
Grain reduces, so part mask layer 1000 is exposed between adjacent spherical particle.
With reference to shown in figure 11, deviate from first substrate, 100 side deposited metal film in the spherical particle layer 2000
Layer 3000.
In 2000 enterprising row metal vapor deposition treatment of spherical particle layer so that the island protrusion that polystyrene spherical particle is formed
Deposition has metal film layer 3000 on the masking layer portions surface that gap between island protrusion is exposed.
With reference to shown in figure 12, the part that the metal film layer 3000 covers the island protrusion is removed, and described in reservation
The part in the gap between adjacent island protrusion of metal film layer 3000.
It is ultrasonically treated using toluene, only removes the metal foil being deposited in the island protrusion that polystyrene spherical particle is formed
Film, and retain the part that metal film layer 3000 covers the mask layer 1000 of exposure.
With reference to shown in figure 13, the island protrusion is removed.
Heated again, the island protrusion that polystyrene spherical particle is formed removes, and retains metallic film
The part of the mask layer 1000 of 3000 covering exposure of layer, and the part metals film layer 3000 is exposed.
With reference to shown in figure 14, the part that the mask layer 1000 is not covered by the metal film layer 3000, shape are etched away
At multiple cylindrical recesses.
The etching processing in vertical direction is carried out to mask layer using etching technics so that mask layer 1000 is not by metal
The part that film layer 3000 covers etches away and exposes N-type epitaxy layer 210 completely (is preferably etched to 210 table of N-type epitaxy layer
Until face, or it is etched to inside N-type epitaxy layer 210), and the part that mask layer 1000 is covered by metal film layer 3000 is protected
It stays.
Spacing between arbitrary neighborhood cylindrical recesses provided by the embodiments of the present application can be identical.And
With reference to shown in figure 15, the metal film layer 3000 is removed.
It in one embodiment of the application, is handled using acid liquid corrosion, removes metal film layer 3000.
With reference to shown in figure 16, multiple quantum well active layer 221, electronic barrier layer 222 are sequentially depositing in the cylindrical recesses
With p-type epitaxial layer 223, the cylinder extension of the cylinder extension array is formed with formation.
In one embodiment of the application, cylinder extension provided by the present application further includes having to continue to sink on p-type epitaxial layer 223
Long-pending p-type coating 224 so that the overall thickness of cylinder extension is identical as the thickness of mask layer 1000.
In one embodiment of the application, by the technological temperature in consersion unit be slowly lowered to 750 degrees centigrades (including
750 degrees Celsius), and then the extension multiple quantum well active layer 221 in N-type epitaxy layer 210, wherein multiple quantum well active layer 221 can
Think the AlGaN/AlGaN multiple quantum well active layers in 5 periods of extension.Wherein, it is wrapped in the AlGaN/AlGaN structures in each period
Include the AlGaN potential barriers of the AlGaN well layer and thickness about 2.5 nanometers (including 2.5 nanometers) of about 10 nanometers of thickness (including 10 nanometers)
Layer.
Then, on the surface of multiple quantum well active layer 221, continue extension electronic barrier layer 222 and p-type epitaxial layer successively
223.Then, the growth temperature of consersion unit is slowly reduced, the epitaxial p type coating 224 on the surface of p-type epitaxial layer 223.
Wherein, p-type AlGaN layer 223 is preferably the AlGaN materials of high aluminium component, since the lattice constant of p-type AlGaN layer 223 compares electronics
Barrier layer 222 and p-type GaN coatings 224 will be big, but the energy gap of p-type AlGaN layer 223 is than electronic barrier layer 222 and P
Type GaN coatings 224 will be small, effectively has adjusted the energy in hole in 223 region of p-type AlGaN layer, improves interior quantum effect
Rate.Wherein, electronic barrier layer 222 and p-type GaN coatings 224 also act as the effect of p type island region domain transmission of materials layer.
With reference to shown in figure 17, removes the mask layer remainder and obtain the light emitting epitaxial layer.
In one embodiment of the application, BOE solution supersound process may be used, remove SiO2The mask layer of material, obtains
Light emitting epitaxial layer.
Light emitting epitaxial layer provided by the embodiments of the present application is formed with cylinder extension array, using in cylinder extension array
Total reflection between cylinder extension and both interfaces of outside air and light scattering effect, enhance the light extraction of UV LED chip
Efficiency.Further, since multiple quantum well active layer is the main pyrotoxin of UV LED chip, it is this containing between air by being arranged
The cylinder extension array of gap enables to thermal diffusion path between pyrotoxin and outside air to shorten, the heat dissipation of UV LED chip
Accelerate, avoids the occurrence of the case where UV LED chip is because of overheating failure.
Refering to what is shown in Fig. 5, corresponding step S3, forms instead in the light emitting epitaxial layer away from 100 side of the first substrate
Penetrate layer 300.
In one embodiment of the application, the application can also form transparent lead between reflecting layer 300 and light emitting epitaxial layer
Electric layer.Specifically, after making finishes light emitting epitaxial layer, on the surface of light emitting epitaxial layer successively uniform deposition transparency conducting layer 310
With reflecting layer 300, wherein transparency conducting layer 310 selects the good indium tin oxide material of electric conductivity, thickness to be preferably arranged to
50nm.It during growing transparency conducting layer 310, is handled using the multiple annealing process under different temperatures gradient, enhancing is outer
Prolong the adhesive strength between material and heterojunction structure, reduces interior contact resistance；And 300 thickness optimization of reflecting layer setting
For 50nm, and the processing of the special process such as roughing in surface is further carried out, reflecting layer uses metallic aluminium or Ti/Al alloy materials, increases
The reflecting effect of strong light, and improve the amount of light of UV LED chip.Meanwhile the electrode at the top of light emitting epitaxial layer
Region is collectively constituted by transparency conducting layer and reflecting layer, is preferably acted as external electrode structure and internal epitaxial layer structure phase
A kind of intermediate contact layer medium playing function served as bridge to connect.
Further, it after forming reflecting layer 300, preferably continues to form conductive membrane layer 320 on 300 surface of reflecting layer.
Wherein, conductive membrane layer 320 selection conduct electricity very well, the superior grapheme material of heat dissipation effect.
Refering to what is shown in Fig. 6, corresponding step S4, N-type is formed in first substrate 100 away from the light emitting epitaxial layer side
Electrode structure 400, and in the reflecting layer 300 P-type electrode structure 500 is formed away from 100 side of the first substrate.
When making N-type electrode structure 400：Deviate from light emitting epitaxial layer side predeterminable area in the first substrate 100 first, if
The groove for penetrating the first substrate 100, buffer layer 110 and superlattice layer 120 is set, insulation processing then is passivated to groove inner wall
Separation layer 440 is obtained, then fills the structure of metal or alloy material formation electrode bolt 430 into groove, wherein separation layer 440
Thickness be preferably arranged to 10nm, the setting of separation layer 440 avoids forming current loop between electrode bolt 430 and side contact layer
And the situation of short circuit is caused to occur；Then, in the first substrate 100 N-type Ohmic contact is formed away from one side surface of light emitting epitaxial layer
Layer 410, N-type ohmic contact layer 410 is contacted with electrode bolt 430, finally deviates from the first substrate 100 1 in N-type ohmic contact layer 410
Side forms N-type electrode 420.Preferably, roughening treatment is carried out to the surface of N-type electrode 420, optimizes itself and extraneous connection
The mode and bond strength of Ohmic contact, the good Au/Sn alloys of the preferred thermal conductivity of N-type electrode, are not this application
Concrete restriction.
Meanwhile when making P-type electrode structure 500：In conductive membrane layer 320 p-type is formed away from 100 side of the first substrate
Ohmic contact layer 510 then forms P-type electrode 520 in p-type ohmic contact layer 510 away from 100 side of the first substrate.Preferably,
Roughening treatment is carried out to the surface of P-type electrode 520, optimize the mode of itself and the Ohmic contact of extraneous connection and is combined strong
Degree, the good Au/Sn alloys of the preferred thermal conductivity of P-type electrode are not particularly limited this application.
Further, UV LED chip provided by the embodiments of the present application further includes having passivation layer 130, and passivation layer 130 will be purple
Outer LED chip exposed surface cladding, and it is vacancy section that passivation layer 130, which corresponds to P-type electrode 520 and the region of N-type electrode 420, by p-type
Electrode 520 and N-type electrode 420 are exposed, and passivation layer 130 protects UV LED chip not corroded by external environment, and in ultraviolet LED
When chip has step and mesa region, influence of the leakage current to UV LED chip at step and mesa region can be reduced, changed
It has been apt to active area current spreading problem in UV LED chip epitaxial wafer, has reduced electric current pile up effect, and then improve ultraviolet LED
The optical output power of chip；Wherein, passivation layer 130 can make before N-type electrode 420 and P-type electrode 520 are respectively formed,
It can be made after N-type electrode 420 and P-type electrode 520 are respectively formed, this application is not particularly limited.
The embodiment of the present application provides a kind of ultraviolet LED thin-film LED and preparation method thereof, including：First substrate；
Light emitting epitaxial layer positioned at one surface of the first substrate, the light emitting epitaxial layer include：Positioned at the N of first substrate surface
Type epitaxial layer is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and each cylinder extension packet
Include multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of the vertical N-type epitaxy layer superposition successively；Positioned at the hair
Light epitaxial layer deviates from the reflecting layer of first one side of substrate；And deviate from the light emitting epitaxial layer positioned at first substrate
The N-type electrode structure of side, and positioned at the reflecting layer away from the P-type electrode structure of first one side of substrate.
As shown in the above, technical solution provided by the embodiments of the present application, light emitting epitaxial layer include cylinder extension battle array
Row, and each cylinder extension includes multiple quantum well active layer, electronic barrier layer and the P of the vertical N-type epitaxy layer superposition successively
Type epitaxial layer, wherein due to being mutually communicated by air with gap between adjacent column extension, and then can be by column outside
Prolong the total reflection between two kinds of interfaces of array and outside air and light scattering effect, enhances the light extraction efficiency of UV LED chip
And heat dissipation effect, improve the performance of UV LED chip.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (10)
1. a kind of ultraviolet LED thin-film LED, which is characterized in that including：
First substrate；
Light emitting epitaxial layer positioned at one surface of the first substrate, the light emitting epitaxial layer include：Positioned at the first substrate table
The N-type epitaxy layer in face is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and each column
Extension includes multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of the vertical N-type epitaxy layer superposition successively；
Deviate from the reflecting layer of first one side of substrate positioned at the light emitting epitaxial layer；
And deviate from the N-type electrode structure of the light emitting epitaxial layer side positioned at first substrate, and it is located at the reflecting layer
P-type electrode structure away from first one side of substrate.
2. ultraviolet LED thin-film LED according to claim 1, which is characterized in that be located at first substrate and institute
It further includes transition structure layer to state between light emitting epitaxial layer, and the transition structure layer includes：
Positioned at the buffer layer of first substrate surface；
And deviate from the superlattice layer of first one side of substrate positioned at the buffer layer.
3. ultraviolet LED thin-film LED according to claim 2, which is characterized in that the buffer layer is BN buffer layers.
4. ultraviolet LED thin-film LED according to claim 1, the cylinder extension further includes being located at outside the p-type
Prolong the p-type coating that layer deviates from first one side of substrate.
5. ultraviolet LED thin-film LED according to claim 1, which is characterized in that be located at the reflecting layer with it is described
It further include transparency conducting layer between light emitting epitaxial layer.
6. ultraviolet LED thin-film LED according to claim 1, which is characterized in that be located at the reflecting layer and the P
Further include conductive membrane layer between type electrode structure.
7. ultraviolet LED thin-film LED according to claim 6, which is characterized in that the conductive membrane layer is graphite
Alkene conductive membrane layer.
8. ultraviolet LED thin-film LED according to claim 1, which is characterized in that the N-type electrode structure includes：
Deviate from the N-type ohmic contact layer of the light emitting epitaxial layer side positioned at first substrate, wherein described N-type ohm connects
Contact layer is connected by penetrating at least one electrode bolt of first substrate with the N-type epitaxy layer, and the electrode bolt
Side wall has separation layer；
And deviate from the N-type electrode of first one side of substrate positioned at the N-type ohmic contact layer；
And the P-type electrode structure includes：
Deviate from the p-type ohmic contact layer of first one side of substrate positioned at the reflecting layer；
And deviate from the P-type electrode of first one side of substrate positioned at the p-type ohmic contact layer.
9. a kind of production method of ultraviolet LED thin-film LED, which is characterized in that including：
One first substrate is provided；
Light emitting epitaxial layer is formed on one surface of the first substrate, the light emitting epitaxial layer includes：Positioned at the first substrate table
The N-type epitaxy layer in face is located at the cylinder extension array that the N-type epitaxy layer deviates from first one side of substrate, and each column
Extension includes multiple quantum well active layer, electronic barrier layer and the p-type epitaxial layer of the vertical N-type epitaxy layer superposition successively；
In the light emitting epitaxial layer reflecting layer is formed away from first one side of substrate；
N-type electrode structure is formed away from the light emitting epitaxial layer side in first substrate, and deviates from institute in the reflecting layer
It states the first one side of substrate and forms P-type electrode structure.
10. the production method of ultraviolet LED thin-film LED according to claim 9, which is characterized in that described luminous outer
The making for prolonging layer includes：
N-type epitaxy layer is formed in first substrate surface；
In the N-type epitaxy layer mask layer is formed away from first one side of substrate；
The spherical particle layer of single layer is deposited away from first one side of substrate in the mask layer；
Predetermined process processing is carried out to the spherical particle layer, so that the spherical particle of spherical particle layer is reduced and collapsed as island
Protrusion；
Deviate from the first one side of substrate deposited metal film layer in the spherical particle layer；
The part that the metal film layer covers the island protrusion is removed, and retains the metal film layer and is located at adjacent island
The part in gap between protrusion；
Remove the island protrusion；
The part that the mask layer is not covered by the metal film layer is etched away, multiple cylindrical recesses are formed；
Remove the metal film layer；
It is sequentially depositing multiple quantum well active layer, electronic barrier layer and p-type epitaxial layer in the cylindrical recesses, institute is formed to be formed
State the cylinder extension of cylinder extension array；
It removes the mask layer remainder and obtains the light emitting epitaxial layer.
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