CN107302002A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN107302002A CN107302002A CN201710017736.3A CN201710017736A CN107302002A CN 107302002 A CN107302002 A CN 107302002A CN 201710017736 A CN201710017736 A CN 201710017736A CN 107302002 A CN107302002 A CN 107302002A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662321963P | 2016-04-13 | 2016-04-13 | |
US62/321,963 | 2016-04-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107302002A true CN107302002A (zh) | 2017-10-27 |
CN107302002B CN107302002B (zh) | 2021-02-05 |
Family
ID=60038426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710017736.3A Active CN107302002B (zh) | 2016-04-13 | 2017-01-11 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10096613B2 (zh) |
CN (1) | CN107302002B (zh) |
TW (1) | TWI635598B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108682676A (zh) * | 2018-05-23 | 2018-10-19 | 长江存储科技有限责任公司 | 三维存储器及其制造方法 |
CN110277391A (zh) * | 2018-03-16 | 2019-09-24 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN110277400A (zh) * | 2018-03-13 | 2019-09-24 | 东芝存储器株式会社 | 半导体装置 |
CN110707091A (zh) * | 2019-08-29 | 2020-01-17 | 长江存储科技有限责任公司 | 三维存储器及其形成方法 |
CN110875323A (zh) * | 2018-08-30 | 2020-03-10 | 东芝存储器株式会社 | 半导体存储装置 |
CN110890379A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN111524895A (zh) * | 2019-02-05 | 2020-08-11 | 东芝存储器株式会社 | 半导体存储器装置 |
CN111696942A (zh) * | 2019-03-12 | 2020-09-22 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN112447750A (zh) * | 2019-08-30 | 2021-03-05 | 铠侠股份有限公司 | 半导体存储装置及半导体存储装置的制造方法 |
CN112530957A (zh) * | 2019-09-19 | 2021-03-19 | 铠侠股份有限公司 | 半导体存储装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102401178B1 (ko) | 2017-11-03 | 2022-05-24 | 삼성전자주식회사 | 3차원 반도체 소자 |
JP2019165133A (ja) * | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
JP2019165132A (ja) * | 2018-03-20 | 2019-09-26 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
EP3891780A4 (en) * | 2018-12-07 | 2022-12-21 | Sunrise Memory Corporation | METHODS OF FORMING NETWORKS OF MULTILAYER VERTICAL NOR TYPE MEMORY CHAINS |
US11727971B2 (en) | 2020-12-22 | 2023-08-15 | Macronix International Co., Ltd. | Memory device and method of fabricating the same |
JP2022147716A (ja) * | 2021-03-23 | 2022-10-06 | キオクシア株式会社 | 半導体記憶装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101981689A (zh) * | 2008-03-26 | 2011-02-23 | 株式会社东芝 | 半导体存储器及其制造方法 |
US20120135583A1 (en) * | 2010-11-29 | 2012-05-31 | Samsung Electronics Co., Ltd. | Methods of manufacturing three dimensional semiconductor memory devices using sub-plates |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5016832B2 (ja) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2009016400A (ja) | 2007-06-29 | 2009-01-22 | Toshiba Corp | 積層配線構造体及びその製造方法並びに半導体装置及びその製造方法 |
US8541831B2 (en) | 2008-12-03 | 2013-09-24 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method for fabricating the same |
JP4922370B2 (ja) | 2009-09-07 | 2012-04-25 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
JP2012174892A (ja) | 2011-02-22 | 2012-09-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2015088732A (ja) | 2013-09-27 | 2015-05-07 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US9202750B2 (en) * | 2013-10-31 | 2015-12-01 | Macronix International Co., Ltd. | Stacked 3D memory with isolation layer between memory blocks and access conductors coupled to decoding elements in memory blocks |
US9627403B2 (en) * | 2015-04-30 | 2017-04-18 | Sandisk Technologies Llc | Multilevel memory stack structure employing support pillar structures |
-
2016
- 2016-09-07 US US15/258,559 patent/US10096613B2/en active Active
- 2016-12-19 TW TW105142014A patent/TWI635598B/zh active
-
2017
- 2017-01-11 CN CN201710017736.3A patent/CN107302002B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101981689A (zh) * | 2008-03-26 | 2011-02-23 | 株式会社东芝 | 半导体存储器及其制造方法 |
US20120135583A1 (en) * | 2010-11-29 | 2012-05-31 | Samsung Electronics Co., Ltd. | Methods of manufacturing three dimensional semiconductor memory devices using sub-plates |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110277400B (zh) * | 2018-03-13 | 2023-10-13 | 铠侠股份有限公司 | 半导体装置 |
CN110277400A (zh) * | 2018-03-13 | 2019-09-24 | 东芝存储器株式会社 | 半导体装置 |
CN110277391A (zh) * | 2018-03-16 | 2019-09-24 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN110277391B (zh) * | 2018-03-16 | 2023-11-07 | 铠侠股份有限公司 | 半导体装置及其制造方法 |
CN108682676A (zh) * | 2018-05-23 | 2018-10-19 | 长江存储科技有限责任公司 | 三维存储器及其制造方法 |
CN110875323A (zh) * | 2018-08-30 | 2020-03-10 | 东芝存储器株式会社 | 半导体存储装置 |
CN110875323B (zh) * | 2018-08-30 | 2023-06-09 | 铠侠股份有限公司 | 半导体存储装置 |
CN110890379B (zh) * | 2018-09-10 | 2023-05-02 | 铠侠股份有限公司 | 半导体装置及其制造方法 |
CN110890379A (zh) * | 2018-09-10 | 2020-03-17 | 东芝存储器株式会社 | 半导体装置及其制造方法 |
CN111524895A (zh) * | 2019-02-05 | 2020-08-11 | 东芝存储器株式会社 | 半导体存储器装置 |
CN111524895B (zh) * | 2019-02-05 | 2023-11-24 | 铠侠股份有限公司 | 半导体存储器装置 |
CN111696942A (zh) * | 2019-03-12 | 2020-09-22 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
CN111696942B (zh) * | 2019-03-12 | 2023-11-14 | 铠侠股份有限公司 | 半导体存储装置及其制造方法 |
CN110707091A (zh) * | 2019-08-29 | 2020-01-17 | 长江存储科技有限责任公司 | 三维存储器及其形成方法 |
CN112447750A (zh) * | 2019-08-30 | 2021-03-05 | 铠侠股份有限公司 | 半导体存储装置及半导体存储装置的制造方法 |
CN112447750B (zh) * | 2019-08-30 | 2024-01-12 | 铠侠股份有限公司 | 半导体存储装置 |
CN112530957A (zh) * | 2019-09-19 | 2021-03-19 | 铠侠股份有限公司 | 半导体存储装置 |
CN112530957B (zh) * | 2019-09-19 | 2024-02-13 | 铠侠股份有限公司 | 半导体存储装置 |
Also Published As
Publication number | Publication date |
---|---|
US20170301687A1 (en) | 2017-10-19 |
TW201803088A (zh) | 2018-01-16 |
CN107302002B (zh) | 2021-02-05 |
US10096613B2 (en) | 2018-10-09 |
TWI635598B (zh) | 2018-09-11 |
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Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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TR01 | Transfer of patent right | ||
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Effective date of registration: 20220210 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |