CN107246844A - SHEL for measuring film thickness divides displacement measurement method - Google Patents
SHEL for measuring film thickness divides displacement measurement method Download PDFInfo
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- 238000006073 displacement reaction Methods 0.000 title claims abstract description 59
- 238000000691 measurement method Methods 0.000 title abstract description 5
- 238000005259 measurement Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 79
- 239000010410 layer Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 15
- 230000010287 polarization Effects 0.000 claims description 15
- 229910052755 nonmetal Inorganic materials 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 239000002120 nanofilm Substances 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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Abstract
Divide displacement measurement method the invention discloses a kind of SHEL for being used to measure film thickness, step one sets up the theory curve that the corresponding SHEL divisions displacement of film thickness changes with incidence angle；Step 2 chooses one group of incident angle, incident light is incided film surface with a certain initial angle and is obtained light beam image after film reflector and handle image progress and obtains corresponding SHEL divisions displacement；Step 3 changes incident angle and obtains the experiment curv that SHEL division displacements change with incident angle successively；Experiment curv obtained by the theoretical curve and step 3 that step 4 comparison step one gained SHEL division displacements change with incident angle determines the thickness of film.The beneficial effects of the invention are as follows：The present invention is the division displacement and the relation of film thickness using SHEL, realizes the noncontact to metal and nonmetallic all material film thickness, lossless high-acruracy survey, and the simple in measurement system structure, is easy to operation.
Description
Technical Field
The invention relates to a method for measuring the thickness of a nano film, in particular to a SHEL splitting displacement measuring method for measuring the thickness of the film.
Background
With the wide application of thin film technology in the fields of microelectronics, optoelectronics, aerospace, bioengineering, weaponry, food science, medical instruments, polymer materials, etc., thin film technology has become a research hotspot in the fields of current scientific and technological research and industrial production, particularly the rapid development of thin film technology, and has directly influenced the development direction of science and technology and the life style of people. The continuous improvement and rapid development of thin film manufacturing technology also put higher demands on various parameters of the thin film, such as thickness and refractive index parameters of the thin film, and reflection, transmission, absorption characteristics, etc., wherein the thickness of the thin film is one of the key parameters in thin film design and process manufacturing, and has a decisive role in optical, mechanical, and electromagnetic characteristics of the thin film, so that it has become a crucial technology to be able to accurately detect the thickness of the thin film. For example, chinese patent application No. 201310137996.6 discloses an SPR phase measurement method for measuring the thickness of a nano-scale metal thin film, which can only measure a metal thin film but not a non-metal thin film due to the limitation of the SPR effect, and thus the application range is not wide enough.
The linearly polarized light consists of two beams of left-handed and right-handed circularly polarized light. When a linearly polarized Light beam is incident on the boundary surface between air and prism, the Light beam is split into two circularly polarized Light beams in opposite directions during reflection or refraction due to the uneven refractive index distribution of the medium, which is called the SpinHall Effect (sel). In the research on the SHEL, the film thickness influences the size of the splitting displacement of the SHEL, and the SHEL exists on both the surface of the metal film and the surface of the non-metal film, so that the invention utilizes the characteristic of the splitting displacement of the SHEL to directly measure the thickness of the metal or non-metal film, and provides a new idea for measuring the film thickness.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for measuring the thickness of all metal and nonmetal materials in a non-contact and non-damage manner with a measured object.
In order to solve the technical problems, the invention adopts the technical scheme that: a SHEL splitting displacement measuring method for measuring the thickness of a thin film comprises the following steps: establishing a theoretical curve graph of SHEL splitting displacement corresponding to the thickness of each material film layer along with the change of an incident angle; step two: selecting a sensitive incident angle of a tested material SHEL splitting effect, enabling linear polarization incident light to be incident on the surface of a tested film plated with the tested film at any initial angle, and obtaining a reflected image of the reflected light by using a photosensitive imaging device and processing the reflected image to obtain corresponding SHEL splitting displacement, wherein the splitting displacement is a function of the thickness of the film and the incident angle of the polarized light; step three: sequentially changing the incident angle from the initial angle to obtain a measurement curve of the measured film with the SHEL splitting displacement changing along with the incident angle; step four: and comparing the measurement curve of the measured film obtained in the step three with the theoretical curve of the SHEL splitting displacement changing along with the incident angle obtained in the step one, and analyzing to determine the thickness of the nano film.
Splitting displacement of the left-right-hand component of reflected lightThe relationship to the film thickness d is:
wherein,
subscript σ represents + and-respectively representing the left-hand and right-hand components of the light beam; gamma is the angle of polarization of the incident light, i.e. the direction of polarization and xiThe included angle between the axes; re tableShowing and taking a real part;w0representing the beam waist of the Gaussian beam incident on the surface of the measured sample;lambda is the wavelength of the incident light in the propagation medium 1,
in the formula
i represents 1, 2,3, wherein 1 represents a first layer medium, 2 represents a thin film layer, 3 represents a third layer medium,1and3respectively represent the relative dielectric constants of the first and third layers of medium (substrate), λ is the wavelength of incident light, θ is the incident angle, d and2is the thickness and relative dielectric constant, r, of the thin film layer12Is the reflection coefficient of the interface of the first medium and the thin film layer, r23Is the reflection coefficient of the interface of the thin film layer and the third medium layer.
The polarization angle gamma of the linearly polarized incident light is any angle of 0-180 degrees, and the wavelength lambda of the incident light is any length of the sensitive wavelength to the SHEL splitting effect of the tested material.
The thickness of the film is determined from the theoretical curve at that time by calculating when the sum of squares of the residuals of the theoretical data and the measured data is minimum.
The measurement precision of the thickness of the nano film is less than or equal to 1 nm.
The tested nano film is a single-layer film or a multi-layer film.
The film is a metal film or a non-metal film.
The film has a measured thickness in the range of 0.1 to 100 nm.
The film measures a film having a thickness in the range of greater than 100 nm.
The photosensitive imaging device is a CCD camera or a CMOS camera.
The invention has the beneficial effects that: the invention realizes non-contact and nondestructive high-precision measurement of the thickness of all metal and nonmetal material films by utilizing the relationship between the splitting displacement of the SHEL and the thickness of the film, and the measurement system has simple structure and convenient operation.
Drawings
FIG. 1 is a schematic view of the present invention SHEL on the surface of a sample to be measured,
FIG. 2(a) is a graph showing the optical spin-splitting displacement of the left-hand component of reflected light according to the thickness of 0-5nm of the Cr2O3 film of the present invention as a function of the incident angle,
FIG. 2(b) is a graph showing the optical spin-splitting displacement of the left-hand component of reflected light according to the thickness of 5-70nm of the Cr2O3 film of the present invention as a function of the incident angle,
FIG. 2(c) is a graph showing the optical spin-splitting displacement of the left-hand component of reflected light according to the thickness of 70-80nm of the Cr2O3 film of the present invention as a function of the incident angle,
FIG. 2(d) is a graph showing the optical spin-splitting displacement of the left-hand component of reflected light according to the thickness of 80-100nm of the Cr2O3 film of the present invention as a function of the incident angle,
FIG. 3(a) is a graph showing the optical spin-splitting displacement of the left-hand component of the reflected light according to the Au film of the present invention at a thickness of 0 to 5nm as a function of the incident angle,
FIG. 3(b) is a graph showing the optical spin-splitting displacement of the left-hand component of the reflected light according to the thickness of 5-20nm of the Au film of the present invention as a function of the incident angle,
FIG. 4 is a flow chart of the implementation steps of the SHEL splitting displacement measurement method for measuring the thickness of a thin film according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and detailed description:
the linearly polarized Light consists of two left-handed and right-handed circularly polarized lights, and when one linearly polarized Light is incident to the interface between air and the prism, the linearly polarized Light is split into two circularly polarized lights in opposite directions during reflection or refraction due to the uneven distribution of the refractive index of the medium, which is called as the Spin Hall Effect (SHEL). In the research on the SHEL, the film thickness influences the size of the splitting displacement of the SHEL, and the SHEL exists on both the surface of the metal film and the surface of the non-metal film, so that the invention utilizes the characteristic of the splitting displacement of the SHEL to directly measure the thickness of the metal or non-metal film, and provides a new idea for measuring the film thickness.
As shown in fig. 1 and 4: a SHEL splitting displacement measuring method for measuring the thickness of a thin film comprises the following steps: establishing a theoretical curve graph of SHEL splitting displacement corresponding to the thickness of each material film layer along with the change of an incident angle; step two: selecting a sensitive incident angle of a tested material SHEL splitting effect, enabling linear polarization incident light to be incident to the surface of the tested film plated with the tested film at any initial angle, and obtaining a reflected image of the reflected light by a photosensitive imaging device and processing the reflected image to obtain corresponding SHEL splitting displacement, wherein the splitting displacement is a function of the thickness of the film and the incident angle of polarized light; step three: sequentially changing the incident angle to obtain a measurement curve of the measured film with the SHEL splitting displacement changing along with the incident angle; step four: and comparing the measurement curve of the measured film obtained in the step three with the theoretical curve of the SHEL splitting displacement changing along with the incident angle obtained in the step one, and analyzing to determine the thickness of the nano film.
According to the Fresnel formula, the expression of the reflection coefficient r and the reflection phase phi of the p-polarization component (transverse electric wave) and the s-polarization component (transverse magnetic wave) when the p-polarization component and the s-polarization component are reflected on the surface of the measured sample is
In the formula
i represents 1, 2 and 3 respectively, wherein 1 represents a first medium layer, 2 represents a thin film layer, 3 represents a third medium layer,1and3respectively represent the relative dielectric constants of the first and third layers of medium (substrate), λ is the wavelength of incident light, θ is the incident angle, d and2is the thickness and relative dielectric constant, r, of the thin film layer12Is the reflection coefficient of the interface of the first medium and the thin film layer, r23Is the reflection coefficient of the interface of the thin film layer and the third medium layer.
A beam of linearly polarized light can be regarded as a beam of left-handed circularly polarized light | +>And a bundle of right-handed circularly polarized light | ->Compositions, e.g. p-polarisation (| H)>) Can be expressed ass polarization (| V)>) Can be expressed asAccording to theoretical derivation, the single-color Gaussian line-polarized incident beam with the polarization angle of gamma is reflected to rotate left | +>And dextro-component generated optical spin-splitting displacementComprises the following steps:
wherein,
subscript σ represents + and-respectively representing the left-hand and right-hand components of the light beam; gamma is the angle of polarization of the incident light, i.e. the direction of polarization and xiThe included angle between the axes; re represents a real part;w0 represents the beam waist of the gaussian beam incident on the surface of the sample under test;
the splitting displacement when the left-handed component and the right-handed component of light in different polarization states γ are reflected can be obtained from the above formula, and it can be seen from the above formula that the magnitude of the splitting displacement is affected by the thickness of the film and the incident angle.
The embodiment of the invention adopts a He-Ne laser with the output wavelength of 632.8nm and the beam waist w of a Gaussian beam0The polarization angle γ is 0 ° at 27 μm, and the incident angle is 40 to 80 degrees with a variation interval of 1 degree. The samples were both metallic and non-metallic films. The non-metallic film samples were: film is dielectric constantCr2O3 of 4.89 (corresponding to FIG. 1)2Layer), the base material is monocrystalline silicon with dielectric constant of 14.87; the metal film samples were: the film is Au (corresponding to FIG. 1) with a dielectric constant of-10.6 +0.81i2Layer), the base material is monocrystalline silicon with dielectric constant of 14.87; FIG. 2(a) is a graph showing the variation of the optical spin-splitting displacement of the left-hand component of the reflected light corresponding to the thickness of 0-5nm of the Cr2O3 film of the present invention with the incident angle, FIG. 2(b) is a graph showing the variation of the optical spin-splitting displacement of the left-hand component of the reflected light corresponding to the thickness of 5-70nm of the Cr2O3 film of the present invention with the incident angle, FIG. 2(c) is a graph showing the variation of the optical spin-splitting displacement of the left-hand component of the reflected light corresponding to the thickness of 70-80nm of the Cr2O3 film of the present invention with the incident angle, FIG. 2(d) is a graph showing the variation of the optical spin-splitting displacement of the left-hand component of the reflected light corresponding to the thickness of 80-100nm of the Cr2O3 film of the present invention with the incident angle, FIG. 3(a) is a graph showing the variation of the optical,
FIG. 3(b) is a graph showing the optical spin-splitting displacement of the left-hand component of the reflected light according to the thickness of 5-20nm of the Au film of the present invention as a function of the incident angle. As can be seen from the figures, the curve chart has good discrimination even if the film layer of the film changes by 1nm, so that the thickness of the film plated on the tested sample can be determined by comparing the theoretical curve with the measurement curve.
From the laser output wavelength of 632.8nm, the dielectric constant of the silicon single crystal substrate of 14.87, the dielectric constant of the Cr2O3 film of 3.12 and the dielectric constant of the Au film of-10.8 +0.81i, the theoretical spin-splitting displacement value (d, theta, lambda, gamma) after reflection by the coated region can be calculated. By comparing the theoretical curve and the measured curve, the thickness of the film can be determined when the sum of the squares of the residuals of the theoretical data and the measured data is calculated to be the minimum. The specific calculation method of the sum of the squares of the residuals is as follows:
in the formula, ln represents measured data, yn represents theoretical data, and vn represents residual error (residual for short).
The method is not limited to the measurement of the thicknesses of Cr2O3 and Au films, nor to the measurement of the thickness of a nano-scale film, the thickness measurement range of the film is set by different materials, and the resolution and the precision are better than 1 nm. The method belongs to a non-contact measurement method, and the film cannot be damaged in the measurement process. The method of the present invention is not limited to a single layer, and may be a multilayer.
Claims (10)
1. A SHEL splitting displacement measuring method for measuring the thickness of a thin film comprises the following steps: establishing a theoretical curve graph of SHEL splitting displacement corresponding to the thickness of each material film layer along with the change of an incident angle;
step two: selecting a sensitive incident angle of a tested material SHEL splitting effect, enabling linear polarization incident light to be incident to the surface of the tested film plated with the tested film at any initial angle, enabling the optical spin to cause left-right rotation components in reflected light beams to split, obtaining reflected images of the reflected light by a photosensitive imaging device, and processing the reflected images to obtain corresponding SHEL splitting displacement, wherein the splitting displacement is a function of the thickness of the film and the incident angle;
step three: changing the incident angle to obtain a measurement curve of the measured film with the SHEL splitting displacement changing along with the incident angle;
step four: and comparing the measurement curve of the measured film obtained in the step three with the theoretical curve of the SHEL splitting displacement changing along with the incident angle obtained in the step one, and analyzing to determine the thickness of the nano film.
2. The method of claim 1, wherein the step of measuring the shift of the SHEL splitting displacement comprises: splitting displacement of the left-right-hand component of reflected lightThe relationship to the film thickness d is:
<mrow> <msubsup> <mi>&delta;</mi> <mi>&sigma;</mi> <mi>&gamma;</mi> </msubsup> <mrow> <mo>(</mo> <mi>d</mi> <mo>,</mo> <mi>&theta;</mi> <mo>,</mo> <mi>&lambda;</mi> <mo>,</mo> <mi>&gamma;</mi> <mo>)</mo> </mrow> <mo>=</mo> <mo>-</mo> <mfrac> <mrow> <mn>2</mn> <mi>Re</mi> <mrow> <mo>(</mo> <msubsup> <mi>&psi;</mi> <mi>&sigma;</mi> <mi>&gamma;</mi> </msubsup> <mo>)</mo> </mrow> <msub> <mi>z</mi> <mi>R</mi> </msub> </mrow> <mrow> <mn>2</mn> <msub> <mi>k</mi> <mi>i</mi> </msub> <msub> <mi>z</mi> <mi>R</mi> </msub> <mo>+</mo> <msup> <mrow> <mo>|</mo> <msubsup> <mi>&chi;</mi> <mi>&sigma;</mi> <mi>&gamma;</mi> </msubsup> <mo>|</mo> </mrow> <mn>2</mn> </msup> <mo>+</mo> <msup> <mrow> <mo>|</mo> <msubsup> <mi>&psi;</mi> <mi>&sigma;</mi> <mi>&gamma;</mi> </msubsup> <mo>|</mo> </mrow> <mn>2</mn> </msup> </mrow> </mfrac> </mrow>
wherein,
<mrow> <msubsup> <mi>&chi;</mi> <mi>&sigma;</mi> <mi>&gamma;</mi> </msubsup> <mo>=</mo> <mfrac> <mrow> <mfrac> <mrow> <mo>&part;</mo> <msub> <mi>r</mi> <mi>p</mi> </msub> </mrow> <mrow> <mo>&part;</mo> <mi>&theta;</mi> </mrow> </mfrac> <mi>c</mi> <mi>o</mi> <mi>s</mi> <mi>&gamma;</mi> <mo>-</mo> <mi>i</mi> <mi>&sigma;</mi> <mfrac> <mrow> <mo>&part;</mo> <msub> <mi>r</mi> <mi>s</mi> </msub> </mrow> <mrow> <mo>&part;</mo> <mi>&theta;</mi> </mrow> </mfrac> <mi>s</mi> <mi>i</mi> <mi>n</mi> <mi>&gamma;</mi> </mrow> <mrow> <msub> <mi>r</mi> <mi>p</mi> </msub> <mi>c</mi> <mi>o</mi> <mi>s</mi> <mi>&gamma;</mi> <mo>-</mo> <msub> <mi>i&sigma;r</mi> <mi>s</mi> </msub> <mi>s</mi> <mi>i</mi> <mi>n</mi> <mi>&gamma;</mi> </mrow> </mfrac> </mrow>
<mrow> <msubsup> <mi>&psi;</mi> <mi>&sigma;</mi> <mi>&gamma;</mi> </msubsup> <mo>=</mo> <mfrac> <mrow> <mi>&sigma;</mi> <mrow> <mo>(</mo> <msub> <mi>r</mi> <mi>p</mi> </msub> <mo>+</mo> <msub> <mi>r</mi> <mi>s</mi> </msub> <mo>)</mo> </mrow> <mi>c</mi> <mi>o</mi> <mi>s</mi> <mi>&gamma;</mi> <mi>cot</mi> <mi>&theta;</mi> <mo>-</mo> <mi>i</mi> <mrow> <mo>(</mo> <msub> <mi>r</mi> <mi>p</mi> </msub> <mo>+</mo> <msub> <mi>r</mi> <mi>s</mi> </msub> <mo>)</mo> </mrow> <mi>s</mi> <mi>i</mi> <mi>n</mi> <mi>&gamma;</mi> <mi>cot</mi> <mi>&theta;</mi> </mrow> <mrow> <msub> <mi>r</mi> <mi>p</mi> </msub> <mi>c</mi> <mi>o</mi> <mi>s</mi> <mi>&gamma;</mi> <mo>-</mo> <msub> <mi>i&sigma;r</mi> <mi>s</mi> </msub> <mi>s</mi> <mi>i</mi> <mi>n</mi> <mi>&gamma;</mi> </mrow> </mfrac> </mrow>
subscript σ represents + and-respectively representing the left-hand and right-hand components of the light beam; gamma is the angle of polarization of the incident light, i.e. the direction of polarization and xiThe included angle between the axes; re represents a real part;w0representing the beam waist of the Gaussian beam incident on the surface of the measured sample;lambda is the wavelength of the incident light in the propagation medium 1,
in the formula
<mrow> <msubsup> <mi>r</mi> <mn>12</mn> <mi>p</mi> </msubsup> <mo>=</mo> <mrow> <mo>(</mo> <msub> <mi>&epsiv;</mi> <mn>2</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>1</mn> <mi>z</mi> </mrow> </msub> <mo>-</mo> <msub> <mi>&epsiv;</mi> <mn>1</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> <mo>/</mo> <mrow> <mo>(</mo> <msub> <mi>&epsiv;</mi> <mn>2</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>1</mn> <mi>z</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>&epsiv;</mi> <mn>1</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow>
<mrow> <msubsup> <mi>r</mi> <mn>23</mn> <mi>p</mi> </msubsup> <mo>=</mo> <mrow> <mo>(</mo> <msub> <mi>&epsiv;</mi> <mn>3</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>-</mo> <msub> <mi>&epsiv;</mi> <mn>2</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>3</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> <mo>/</mo> <mrow> <mo>(</mo> <msub> <mi>&epsiv;</mi> <mn>3</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>&epsiv;</mi> <mn>2</mn> </msub> <msub> <mi>k</mi> <mrow> <mn>3</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow>
<mrow> <msubsup> <mi>r</mi> <mn>12</mn> <mi>s</mi> </msubsup> <mo>=</mo> <mrow> <mo>(</mo> <msub> <mi>k</mi> <mrow> <mn>1</mn> <mi>z</mi> </mrow> </msub> <mo>-</mo> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> <mo>/</mo> <mrow> <mo>(</mo> <msub> <mi>k</mi> <mrow> <mn>1</mn> <mi>z</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow>
<mrow> <msubsup> <mi>r</mi> <mn>23</mn> <mi>s</mi> </msubsup> <mo>=</mo> <mrow> <mo>(</mo> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>-</mo> <msub> <mi>k</mi> <mrow> <mn>3</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> <mo>/</mo> <mrow> <mo>(</mo> <msub> <mi>k</mi> <mrow> <mn>2</mn> <mi>z</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>k</mi> <mrow> <mn>3</mn> <mi>z</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow>1
<mrow> <msub> <mi>k</mi> <mrow> <mi>i</mi> <mi>z</mi> </mrow> </msub> <mo>=</mo> <msqrt> <mrow> <msup> <mrow> <mo>(</mo> <mn>2</mn> <mi>&pi;</mi> <mo>/</mo> <mi>&lambda;</mi> <mo>)</mo> </mrow> <mn>2</mn> </msup> <msub> <mi>&epsiv;</mi> <mi>i</mi> </msub> <mo>-</mo> <msubsup> <mi>k</mi> <mrow> <mn>1</mn> <mi>x</mi> </mrow> <mn>2</mn> </msubsup> </mrow> </msqrt> </mrow>
<mrow> <msub> <mi>k</mi> <mrow> <mn>1</mn> <mi>x</mi> </mrow> </msub> <mo>=</mo> <mfrac> <mrow> <mn>2</mn> <mi>&pi;</mi> </mrow> <mi>&lambda;</mi> </mfrac> <msqrt> <msub> <mi>&epsiv;</mi> <mn>1</mn> </msub> </msqrt> <mi>s</mi> <mi>i</mi> <mi>n</mi> <mi>&theta;</mi> </mrow>
i represents 1, 2 and 3 respectively, wherein 1 represents a first medium layer, 2 represents a thin film layer, 3 represents a third medium layer,1and3respectively represent the relative dielectric constants of the first and third layers of medium (substrate), λ is the wavelength of incident light, θ is the incident angle, d and2is the thickness and relative dielectric constant, r, of the thin film layer12Is the reflection coefficient of the interface of the first medium and the thin film layer, r23Is the reflection coefficient of the interface of the thin film layer and the third medium layer.
3. The method of claim 2, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the polarization angle gamma of the linearly polarized incident light is any angle of 0-180 degrees, and the wavelength lambda of the incident light is any length of the sensitive wavelength to the SHEL splitting effect of the tested material.
4. The method of claim 1, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the thickness of the film is determined from the theoretical curve at that time by calculating when the sum of squares of the residuals of the theoretical data and the measured data is minimum.
5. The method of claim 1, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the measurement resolution and precision of the film thickness are better than 1 nm.
6. The method of claim 1, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the film to be tested is a single-layer film or a multi-layer nano film.
7. The method of claim 1, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the film is a metal film or a non-metal film.
8. The SHEL splitting displacement measuring method for measuring the thickness of a thin film according to any one of claims 1 to 7, characterized in that: the thickness of the film is measured in the range of nano-scale to sub-micron scale.
9. The method of claim 8, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the film has a measured thickness in the range of 0 to 100 nm.
10. The method of claim 1, wherein the step of measuring the shift of the SHEL splitting displacement comprises: the photosensitive imaging device is a CCD camera or a CMOS camera.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160320641A1 (en) * | 2015-04-30 | 2016-11-03 | The Government Of The Us, As Represented By The Secretary Of The Navy | Method for an Optical Modulator Using the Spin Hall Effect in Metals |
| CN107843198A (en) * | 2017-10-18 | 2018-03-27 | 天津大学 | A kind of device for being used to measure the division displacement of light logic gates |
| CN107917672A (en) * | 2018-01-05 | 2018-04-17 | 中国计量大学 | A kind of test method for being used to improve super thin metal films test sensitivity |
| CN110285766A (en) * | 2019-07-26 | 2019-09-27 | 郑州轻工业学院 | A method of nano-level thin-membrane thickness is measured using spin of photon Hall effect |
| CN110672525A (en) * | 2019-10-23 | 2020-01-10 | 成都信息工程大学 | Solution concentration measuring device and method and solution sensing sensitivity measuring method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000804A (en) * | 2012-12-21 | 2013-03-27 | 清华大学 | Method for producing quantized abnormal Hall effect |
| CN106091953A (en) * | 2016-07-19 | 2016-11-09 | 天津大学 | A kind of SPR phase measuring method for measuring nanoscale double-layer metal film thickness |
-
2017
- 2017-07-17 CN CN201710579817.2A patent/CN107246844B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000804A (en) * | 2012-12-21 | 2013-03-27 | 清华大学 | Method for producing quantized abnormal Hall effect |
| CN106091953A (en) * | 2016-07-19 | 2016-11-09 | 天津大学 | A kind of SPR phase measuring method for measuring nanoscale double-layer metal film thickness |
Non-Patent Citations (3)
| Title |
|---|
| XINXING ZHOU ECT.: "《Experimental observation of the spin Hall effect of light on a nanometal film via weak measurements》", 《PHYS REV. A》 * |
| 李星 等: "《纳米金属薄膜中光子自旋霍尔效应的最佳弱测量》", 《光学学报》 * |
| 李星: "《光子自旋霍尔效应的最佳弱测量》", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160320641A1 (en) * | 2015-04-30 | 2016-11-03 | The Government Of The Us, As Represented By The Secretary Of The Navy | Method for an Optical Modulator Using the Spin Hall Effect in Metals |
| US10139655B2 (en) * | 2015-04-30 | 2018-11-27 | The United States Of America, As Represented By The Secretary Of The Navy | Method for an optical modulator using the spin hall effect in metals |
| US10663773B2 (en) * | 2015-04-30 | 2020-05-26 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Optical modulator using the spin hall effect in metals |
| CN107843198A (en) * | 2017-10-18 | 2018-03-27 | 天津大学 | A kind of device for being used to measure the division displacement of light logic gates |
| CN107917672A (en) * | 2018-01-05 | 2018-04-17 | 中国计量大学 | A kind of test method for being used to improve super thin metal films test sensitivity |
| CN107917672B (en) * | 2018-01-05 | 2023-06-13 | 中国计量大学 | Test method for improving test sensitivity of ultrathin metal film |
| CN110285766A (en) * | 2019-07-26 | 2019-09-27 | 郑州轻工业学院 | A method of nano-level thin-membrane thickness is measured using spin of photon Hall effect |
| CN110672525A (en) * | 2019-10-23 | 2020-01-10 | 成都信息工程大学 | Solution concentration measuring device and method and solution sensing sensitivity measuring method |
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