CN107244909A - 一种低压高能氧化锌压敏电阻 - Google Patents

一种低压高能氧化锌压敏电阻 Download PDF

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CN107244909A
CN107244909A CN201710324476.4A CN201710324476A CN107244909A CN 107244909 A CN107244909 A CN 107244909A CN 201710324476 A CN201710324476 A CN 201710324476A CN 107244909 A CN107244909 A CN 107244909A
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赵大鹏
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Bengbu Harvest Electromechanical Equipment Manufacturing Co Ltd
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Abstract

本发明属于氧化锌压敏电阻制备技术领域，具体涉及一种低压高能氧化锌压敏电阻，利用陶瓷工艺制成，所述元件材料包括以下原料：氧化锌、硅硼玻璃、三氧化二铋、五氧化二铌、氧化锡、碳酸铜。本发明相比现有技术具有以下优点：本发明中硅硼玻璃熔融温度低，远低于烧结温度，使其在烧结过程中液相能充分的浸润氧化锌晶粒，使晶粒尺寸增大，分布更加均匀，有效的改善了氧化锌压敏电阻的微观结构，同时还能促进压敏电阻晶粒生长，使氧化锌在950℃具有较好的烧结性能，降低了压敏电阻的电位梯度，提高了非线性特性；提供一种低压高能氧化锌压敏电阻。

Description

一种低压高能氧化锌压敏电阻
技术领域
本发明属于氧化锌压敏电阻制备技术领域，具体涉及一种低压高能氧化锌压敏电阻。
背景技术
氧化锌压敏电阻器兼具工艺简单、成本低廉、使用方便等优点，获得了广泛应用，早期的压敏电阻器主要用于各种电器设备和避雷器作为过压保护和浪涌抑制，而现在压敏电阻器广泛应用于汽车工业、通讯设备、铁路信号、微型电机及各种电子元器件的保护，使压敏电阻低压化的传统方法为将原件厚度减薄，元件厚度减薄后，不但元件的机械强度降低，而且通流容量减小，因此，如何制备低压高能压敏电阻器，要求单位厚度的压敏电压值低、同时漏电流小的压敏电阻器成了现在需要解决的问题。
发明内容
本发明的目的是针对现有元件的机械强度降低，而且通流容量减小的问题，提供了一种低压高能氧化锌压敏电阻。
本发明是通过以下技术方案实现的：一种低压高能氧化锌压敏电阻，利用陶瓷工艺制成，所述元件材料包括以下重量份的原料：氧化锌92.4-92.8份、硅硼玻璃3.6-4.2份、三氧化二铋0.45-0.62份、五氧化二铌0.35-0.42份、氧化锡0.05-0.08份、碳酸铜0.08-0.14份；
其中，所述硅硼玻璃的制备方法如下：将氧化砷、氧化锡、氧化铅、氧化硅、硼酸、氧化铒按重量比18:13:28:25:34:4混合均匀，以升温速度为4-6℃/分钟升温至650℃，保温2.5-3小时，然后以升温速度8-10℃/分钟继续升温至950℃后，保温1-1.5小时，然后在蒸馏水中淬火，取出烘干后，研磨，过360目筛即得。
作为对上述方案的进一步改进，利用陶瓷工艺制作生片，然后将生片置于高温炉中，以4℃/min的升温速度升温至800℃后，保温40分钟，然后以该升温速度继续升温至1170℃后，保温30分钟，降温至750℃，随炉冷却至室温，最后被表面银电极即可。
作为对上述方案的进一步改进，所述生片的规格为φ16.5mm×2mm。
作为对上述方案的进一步改进，所述各原料纯度不低于99%。
作为对上述方案的进一步改进，所述硅硼玻璃的玻璃转化温度为364℃，析晶温度为402℃，熔融温度为673℃。
本发明相比现有技术具有以下优点：本发明中硅硼玻璃熔融温度低，远低于烧结温度，使其在烧结过程中液相能充分的浸润氧化锌晶粒，使晶粒尺寸增大，分布更加均匀，有效的改善了氧化锌压敏电阻的微观结构，同时还能促进压敏电阻晶粒生长，使氧化锌在950℃具有较好的烧结性能，降低了压敏电阻的电位梯度，提高了非线性特性；硅硼玻璃的添加量与其他原料的科学配比，能使氧化锌压敏电阻的晶粒生长动力学指数为2.13左右，激活能为142.6kJ/mol，与现有硅硼玻璃相比，晶粒生长动力学指数和激活能都较小，因此能在降低烧结温度的同时促进晶粒的生长效果，增强非线性特性性能，提供一种低压高能氧化锌压敏电阻。
具体实施方式
实施例1
一种低压高能氧化锌压敏电阻，利用陶瓷工艺制成，所述元件材料包括以下重量份的原料：氧化锌92.4-92.8份、硅硼玻璃3.6-4.2份、三氧化二铋0.45-0.62份、五氧化二铌0.35-0.42份、氧化锡0.05-0.08份、碳酸铜0.08-0.14份；
其中，所述硅硼玻璃的制备方法如下：将氧化砷、氧化锡、氧化铅、氧化硅、硼酸、氧化铒按重量比18:13:28:25:34:4混合均匀，以升温速度为4-6℃/分钟升温至650℃，保温2.5-3小时，然后以升温速度8-10℃/分钟继续升温至950℃后，保温1-1.5小时，然后在蒸馏水中淬火，取出烘干后，研磨，过360目筛即得。
其中，利用陶瓷工艺制作生片，然后将生片置于高温炉中，以4℃/min的升温速度升温至800℃后，保温40分钟，然后以该升温速度继续升温至1170℃后，保温30分钟，降温至750℃，随炉冷却至室温，最后被表面银电极即可；所述生片的规格为φ16.5mm×2mm。
其中，所述硅硼玻璃的玻璃转化温度为364℃，析晶温度为402℃，熔融温度为673℃。
对元件材料中个原料的组成分别进行调整，各原料超出本发明中原料配比均会影响压敏电阻器电性能；选择现有硅硼玻璃替换本发明中硅硼玻璃作为对照组，此时，检测当烧结温度为950℃时，其晶粒生长动力学指数约为4.27，激活能约为308.2kJ/mol；当烧结温度为1200℃时，其晶粒生长动力学指数约为2.96，激活能约为185.4kJ/mol，通过本发明中晶粒生长性能比较可知，本发明中压敏电阻的平均晶粒生长动力学指数和激活能更小，说明其在相对低温条件下即可很好的融入氧化性晶粒，从而能改善压敏电阻微观结构，提高非线性特性，漏电流减小，压敏电场上升，即获得一种低压高能氧化锌压敏电阻。

Claims (5)

1.一种低压高能氧化锌压敏电阻，利用陶瓷工艺制成，其特征在于，所述元件材料包括以下重量份的原料：氧化锌92.4-92.8份、硅硼玻璃3.6-4.2份、三氧化二铋0.45-0.62份、五氧化二铌0.35-0.42份、氧化锡0.05-0.08份、碳酸铜0.08-0.14份；
其中，所述硅硼玻璃的制备方法如下：将氧化砷、氧化锡、氧化铅、氧化硅、硼酸、氧化铒按重量比18:13:28:25:34:4混合均匀，以升温速度为4-6℃/分钟升温至650℃，保温2.5-3小时，然后以升温速度8-10℃/分钟继续升温至950℃后，保温1-1.5小时，然后在蒸馏水中淬火，取出烘干后，研磨，过360目筛即得。
2.如权利要求1所述一种低压高能氧化锌压敏电阻，其特征在于，利用陶瓷工艺制作生片，然后将生片置于高温炉中，以4℃/min的升温速度升温至800℃后，保温40分钟，然后以该升温速度继续升温至1170℃后，保温30分钟，降温至750℃，随炉冷却至室温，最后被表面银电极即可。
3.如权利要求2所述一种低压高能氧化锌压敏电阻，其特征在于，所述生片的规格为φ16.5mm×2mm。
4.如权利要求2所述一种低压高能氧化锌压敏电阻，其特征在于，所述各原料纯度不低于99%。
5.如权利要求1所述一种低压高能氧化锌压敏电阻，其特征在于，所述硅硼玻璃的玻璃转化温度为364℃，析晶温度为402℃，熔融温度为673℃。
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CN111462970A (zh) * 2020-04-08 2020-07-28 湖南省湘电试研技术有限公司 一种配网防雷环形氧化锌电阻片及其制备方法

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万帅等: "铋硼玻璃掺杂对ZnO-Bi2O3-TiO2系压敏电阻性能影响", 《无机材料学报》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111462970A (zh) * 2020-04-08 2020-07-28 湖南省湘电试研技术有限公司 一种配网防雷环形氧化锌电阻片及其制备方法

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