CN107231595A - A kind of MEMS and preparation method thereof, electronic installation - Google Patents
A kind of MEMS and preparation method thereof, electronic installation Download PDFInfo
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- CN107231595A CN107231595A CN201610172712.0A CN201610172712A CN107231595A CN 107231595 A CN107231595 A CN 107231595A CN 201610172712 A CN201610172712 A CN 201610172712A CN 107231595 A CN107231595 A CN 107231595A
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- backboard
- vibrating diaphragm
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
Abstract
The present invention relates to a kind of MEMS and preparation method thereof, electronic installation.The MEMS includes：Substrate；Vibrating diaphragm, positioned at the top of the substrate, the vibrating diaphragm includes graphene layer；Backboard, positioned at the top of the vibrating diaphragm；Cavity, between the vibrating diaphragm and the backboard.The present invention is in order to solve problems of the prior art there is provided a kind of MEMS, and the device includes substrate；Vibrating diaphragm, including graphene layer, positioned at the semiconductor substrate；Backboard, above the vibrating diaphragm；Cavity, between the vibrating diaphragm and the backboard.The vibrating diaphragm selects graphene in the present invention, and graphene causes the performance of the MEMS to be further improved due to its excellent physics, chemical property, electric property and mechanical performance.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and its preparation
Method, electronic installation.
Background technology
With continuing to develop for semiconductor technology, in the in the market of sensor (motion sensor) class product,
Smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming most main flow, at first
The technology entered, and with the renewal of technology, the developing direction of this kind of transmission sensors product be scale more
Small size, high-quality electric property and lower loss.
Wherein, MEMS sensor is widely used in automotive electronics：Such as TPMS, engine oil pressure
Sensor, automobile brake system air pressure probe, air intake manifold of automotive engine pressure sensor
(TMAP), common rail for diesel engine pressure sensor；Consumer electronics：As tire gauge, sphygmomanometer, cupboard scale,
Health scale, washing machine, dish-washing machine, refrigerator, micro-wave oven, baking box, dust catcher pressure sensor,
A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level pressure
Sensor；Industrial electronic：Such as digital pressure gauge, digital stream scale, industrial batching weighing, electronics sound
As field：The equipment such as microphone.
In MEMS fields, the operation principle of the MEMS is by vibrating diaphragm (Membrane)
Motion produce electric capacity change, using capacitance change carry out computing and work, it is existing conventional
MEMS microphone includes vibrating diaphragm, backboard and the back of the body chamber composition below backboard.By vibrating diaphragm by sound
Signal is converted into electric signal.
Need to the current MEMS microphone and preparation method thereof cumbersome and complexity, it is therefore desirable to make
It is further to improve.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will be in embodiment
It is further described in part.The Summary of the present invention is not meant to attempt to limit institute
The key feature and essential features of claimed technical scheme, do not mean that more and attempt to determine to want
Seek the protection domain of the technical scheme of protection.
The invention provides a kind of MEMS, the MEMS includes：
Substrate；
Vibrating diaphragm, positioned at the top of the substrate, the vibrating diaphragm includes graphene layer；
Backboard, positioned at the top of the vibrating diaphragm；
Cavity, between the vibrating diaphragm and the backboard.
Alternatively, doped with Au, Ag, Cu, Ni, P, In and Ga in the graphene layer
It is one or more.
Alternatively, back of the body chamber, vibrating diaphragm described in exposed portion are formed with the substrate.
Alternatively, some openings are formed with the backboard.
Present invention also offers a kind of preparation method of MEMS, it is characterised in that methods described bag
Include：
Substrate is provided, the vibrating diaphragm of patterning is formed with the substrate, the vibrating diaphragm includes graphene layer；
The sacrifice layer with opening is formed in the substrate and the vibrating diaphragm, the opening exposes described shake
Film；
Backboard is formed on the sacrifice layer, to cover the sacrifice layer and the opening, and is shaken described
Cavity is formed between film and the backboard.
Alternatively, doped with Au, Ag, Cu, Ni, P, In and Ga in the graphene layer
It is one or more.
Alternatively, the step of forming the sacrifice layer includes：
Sacrifice layer is formed in the substrate and the vibrating diaphragm；
The sacrifice layer is patterned, is open with being formed in the middle part of the sacrifice layer, exposes described shake
Film.
Alternatively, the step of forming the backboard includes：
The sacrifice layer is engaged with backboard wafer, to cover the sacrifice layer and the opening, and in institute
State and form cavity between vibrating diaphragm and the backboard；
Backboard wafer described in thinning, to reduce the thickness of the backboard wafer；
Passivation layer is formed on the backboard wafer, to cover the backboard wafer；
The passivation layer is patterned, to form the first opening, backboard wafer described in exposed portion；
The backboard wafer is patterned, is opened with forming some spaced second in the backboard wafer
Mouthful.
Alternatively, methods described still further comprises the back side for patterning the substrate, with the substrate
It is middle to form back of the body chamber, vibrating diaphragm described in exposed portion.
Present invention also offers a kind of electronic installation, the electronic installation includes above-mentioned MEMS.
The present invention is described in order to solve problems of the prior art there is provided a kind of MEMS
Device includes substrate；Vibrating diaphragm, including graphene layer, positioned at the semiconductor substrate；Backboard, position
Above the vibrating diaphragm；Cavity, between the vibrating diaphragm and the backboard.It is described in the present invention to shake
Film selects graphene, and graphene is due to its excellent physics, chemical property, electric property and mechanical performance
So that the performance of the MEMS is further improved.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Show in accompanying drawing
Embodiments of the invention and its description are gone out, for explaining the device and principle of the present invention.In the accompanying drawings,
Fig. 1 is the preparation technology flow chart of heretofore described MEMS；
Fig. 2 a-2h are the preparation process schematic diagram of heretofore described MEMS；
Fig. 3 is the external view of the example of mobile phone handsets in the present invention.
Embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more thoroughly
Understand.It is, however, obvious to a person skilled in the art that the present invention can be without one
Or these multiple details and be carried out.In other examples, in order to avoid obscuring with the present invention,
It is not described for some technical characteristics well known in the art.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to this
In the embodiment that proposes.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will be originally
The scope of invention fully passes to those skilled in the art.In the accompanying drawings, for clarity, Ceng He areas
Size and relative size may be exaggerated.Same reference numerals represent identical element from beginning to end.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " coupling
Close " other elements or layer when, its can directly on other elements or layer, it is adjacent thereto, connection
Or other elements or layer are coupled to, or there may be element or layer between two parties.On the contrary, when element is claimed
For " on directly existing ... ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other members
When part or layer, then in the absence of element or layer between two parties.Although it should be understood that term first, the can be used
2nd, the third various elements of description, part, area, floor and/or part, these elements, part, area,
Layer and/or part should not be limited by these terms.These terms be used merely to distinguish element, part,
Area, floor or part and another element, part, area, floor or part.Therefore, the present invention is not being departed from
Under teaching, the first element discussed below, part, area, floor or part be represented by the second element,
Part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ...
On ", " above " etc., can describe for convenience herein and by using so as to shown in description figure
One element or feature and other elements or the relation of feature.It should be understood that except the orientation shown in figure
In addition, spatial relationship term is intended to also including the use of the different orientation with the device in operation.For example, such as
In fruit accompanying drawing device upset, then, be described as " below other elements " or " under it " or
" under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary term
" ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (rotation
Turn 90 degrees or other orientations) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limit of the present invention
System.Herein in use, " one " of singulative, " one " and " described/should " be also intended to include plural number
Form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " comprising ",
When in this specification in use, determining the feature, integer, step, operation, element and/or part
Presence, but be not excluded for one or more other features, integer, step, operation, element, part
And/or the presence or addition of group.Herein in use, term "and/or" includes any of related Listed Items
And all combinations.
In order to thoroughly understand the present invention, detailed step and detailed knot will be proposed in following description
Structure, to explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but
In addition to these detailed descriptions, the present invention can also have other embodiment.
The present invention is described in order to solve problems of the prior art there is provided a kind of MEMS
Device includes
Substrate 201；
Vibrating diaphragm 203, including graphene layer, positioned at the semiconductor substrate；
Backboard 205, positioned at the top of vibrating diaphragm 203；
Cavity, between the vibrating diaphragm 105 and the backboard 103.
Wherein, the vibrating diaphragm 203 include graphene, wherein, the graphene be known world it is most thin,
Most hard nano material, it is almost fully transparent, only absorbs 2.3% light；Thermal conductivity factor is high
5300W/mK, higher than CNT and diamond, its electron mobility exceedes under normal temperature
15000cm2/Vs, and higher than CNT or silicon crystal, and resistivity only about 1 Ω m, than copper or silver more
It is low, it is the minimum material of world resistivity.Because its resistivity is extremely low, the speed of electron transfer is exceedingly fast, because
This is further improved from the performance and stability of the MEMS of graphene.
Graphene is both most thin material, is also most tough material, fracture strength is than best steel also
Want high 200 times.It has good elasticity again simultaneously, and stretch range can reach the 20% of own dimensions.Such as
Fruit makes hammock with the graphene of one piece of 1 square metre of area, and weight itself can bear one less than 1 milligram
Only one kilogram of cat.
Alternatively, doped with Au, Ag, Cu, Ni, P, In and Ga in the graphene layer
It is one or more.
Alternatively, the graphene layer can include one or more layers.
Alternatively, back of the body chamber is formed with the substrate, exposes the vibrating diaphragm in the back of the body chamber.
Alternatively, some openings are formed with the backboard 205.
The present invention is described in order to solve problems of the prior art there is provided a kind of MEMS
Device includes substrate；Vibrating diaphragm, including graphene layer, positioned at the semiconductor substrate；Backboard, position
Above the vibrating diaphragm；Cavity, between the vibrating diaphragm and the backboard.It is described in the present invention to shake
Film selects graphene, and graphene is due to its excellent physics, chemical property, electric property and mechanical performance
So that the performance of the MEMS is further improved.
Embodiment one
The MEMS includes：
Substrate 201；
Vibrating diaphragm 203, including graphene layer, positioned at the semiconductor substrate；
Backboard 205, positioned at the top of vibrating diaphragm 203；
Cavity, between the vibrating diaphragm 105 and the backboard 103.
Wherein, the substrate 201 can select the substrate of Semiconductor substrate or MEMS microphone device,
Such as described substrate 201 can be at least one of following material being previously mentioned：Silicon, silicon-on-insulator
(SOI) silicon (SSOI), stacking SiGe (S-SiGeOI), insulation on insulator, are laminated on insulator
SiGe (SiGeOI) and germanium on insulator (GeOI) etc. on body.
Wherein, the vibrating diaphragm 203 include graphene, wherein, the graphene be known world it is most thin,
Most hard nano material, it is almost fully transparent, only absorbs 2.3% light；Thermal conductivity factor is high
5300W/mK, higher than CNT and diamond, its electron mobility exceedes under normal temperature
15000cm2/Vs, and higher than CNT or silicon crystal, and resistivity only about 1 Ω m, than copper or silver more
It is low, it is the minimum material of world resistivity.Because its resistivity is extremely low, the speed of electron transfer is exceedingly fast, because
This is further improved from the performance and stability of the MEMS of graphene.
Graphene is both most thin material, is also most tough material, fracture strength is than best steel also
Want high 200 times.It has good elasticity again simultaneously, and stretch range can reach the 20% of own dimensions.Such as
Fruit makes hammock with the graphene of one piece of 1 square metre of area, and weight itself can bear one less than 1 milligram
Only one kilogram of cat.
Alternatively, doped with Au, Ag, Cu, Ni, P, In and Ga in the graphene layer
It is one or more.
Alternatively, the graphene layer can include one or more layers.
Exemplarily, the graphene layer can be multi-layer graphene, and the material of the graphene layer includes
The mixture of graphene and graphite.Multi-layer graphene refers to by 3-10 layers with benzene ring structure (i.e. hexagonal honeycomb
Structure) periodically closelypacked carbon atom is with different way of stacking (including ABC stackings, ABA heaps
Pile etc.) stacking constitute a kind of two-dimentional carbon material.In this embodiment, the number of plies of multi-layer graphene can reach
To 10 layers.
Can be using including but not limited to silicon carbide epitaxial growth method, organic synthesis method, chemical vapor deposition
Or the deposition process such as plasma reinforced chemical vapour deposition method (PECVD) is formed (CVD).
The sacrifice layer can be from interlayer metal layer or oxide skin(coating).
Wherein, the backboard 205 selects conductive material or the semi-conducting material of doping, alternatively,
From the silicon of doping in the embodiment.
Wherein, the Doped ions are not limited to a certain kind, such as can be B, P, N, As,
It will not enumerate.
The backboard 205 passes through eutectic bond or the method for thermal bonding and the sacrifice layer in this step
Bonding, to form integral structure.
Back of the body chamber is formed with the substrate, the vibrating diaphragm is exposed in bottom.
The backboard is fixed electrode in the present invention, and the vibrating diaphragm is moving electrode, the backboard and described
Cavity between vibrating diaphragm is dielectric medium, after vibrating diaphragm is under pressure, and vibrating diaphragm (Membrane) produces deformation,
As shown in Figure 2 g, the motion of vibrating diaphragm produces the change of electric capacity, and computing and work are carried out using capacitance change,
Voice signal is converted into by electric signal by vibrating diaphragm.
The present invention is described in order to solve problems of the prior art there is provided a kind of MEMS
Device includes substrate；Vibrating diaphragm, including graphene layer, positioned at the semiconductor substrate；Backboard, position
Above the vibrating diaphragm；Cavity, between the vibrating diaphragm and the backboard.It is described in the present invention to shake
Film selects graphene, and graphene is due to its excellent physics, chemical property, electric property and mechanical performance
So that the performance of the MEMS is further improved.
Embodiment two
There is provided a kind of preparation of MEMS in order to solve problems of the prior art by the present invention
Method, below in conjunction with the accompanying drawings 2a-2h methods described is further described.
Wherein, Fig. 2 a-2h are the preparation process schematic diagram of heretofore described MEMS；Fig. 3 is
The external view of the example of mobile phone handsets in the present invention.
Fig. 1 is the preparation technology flow chart of heretofore described MEMS, specifically includes following steps：
Step S1：Substrate is provided, the vibrating diaphragm of patterning is formed with the substrate, the vibrating diaphragm includes
Graphene layer；
Step S2：The sacrifice layer with opening, the opening dew are formed in the substrate and the vibrating diaphragm
Go out the vibrating diaphragm；
Step S3：Backboard is formed on the sacrifice layer, to cover the sacrifice layer and the opening, and
Cavity is formed between the vibrating diaphragm and the backboard.
Below based on the process chart in accompanying drawing 1, methods described expansion is described in detail.
Step one is performed there is provided substrate 201, the vibrating diaphragm 203 of patterning, institute are formed with the substrate
Stating vibrating diaphragm 203 includes graphene layer.
Specifically, as shown in Figure 2 a, the substrate 201 can select Semiconductor substrate or MEMS
The substrate of microphone device, such as described substrate 201 can be at least one in the following material being previously mentioned
Kind：Silicon, silicon-on-insulator (SOI), stacking silicon (SSOI) on insulator, on insulator it is laminated germanium
Silicon (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc..
Alternatively, dielectric layer 202 can also be formed in the substrate 201, such as described dielectric layer 202
Oxide can be selected.
Wherein, the vibrating diaphragm 203 include graphene, wherein, the graphene be known world it is most thin,
Most hard nano material, it is almost fully transparent, only absorbs 2.3% light；Thermal conductivity factor is high
5300W/mK, higher than CNT and diamond, its electron mobility exceedes under normal temperature
15000cm2/Vs, and higher than CNT or silicon crystal, and resistivity only about 1 Ω m, than copper or silver more
It is low, it is the minimum material of world resistivity.Because its resistivity is extremely low, the speed of electron transfer is exceedingly fast, because
This is further improved from the performance and stability of the MEMS of graphene.
Graphene is both most thin material, is also most tough material, fracture strength is than best steel also
Want high 200 times.It has good elasticity again simultaneously, and stretch range can reach the 20% of own dimensions.Such as
Fruit makes hammock with the graphene of one piece of 1 square metre of area, and weight itself can bear one less than 1 milligram
Only one kilogram of cat.
Alternatively, doped with Au, Ag, Cu, Ni, P, In and Ga in the graphene layer
It is one or more.
Alternatively, the graphene layer can include one or more layers.
Exemplarily, the graphene layer can be multi-layer graphene, and the material of the graphene layer includes
The mixture of graphene and graphite.Multi-layer graphene refers to by 3-10 layers with benzene ring structure (i.e. hexagonal honeycomb
Structure) periodically closelypacked carbon atom is with different way of stacking (including ABC stackings, ABA heaps
Pile etc.) stacking constitute a kind of two-dimentional carbon material.In this embodiment, the number of plies of multi-layer graphene can reach
To 10 layers.
Can be using including but not limited to silicon carbide epitaxial growth method, organic synthesis method, chemical vapor deposition
Or the deposition process such as plasma reinforced chemical vapour deposition method (PECVD) is formed (CVD).
The specific preparation process of wherein chemical vapour deposition technique includes：Then gaseous carbon source is led into reative cell
Pyrolytic on cathode substrate surface in the reaction chamber.Wherein, gaseous carbon source can select methane (CH4)、
Ethene (C2H4) and acetylene (C2H2) etc..Deposition temperature range is controlled at 600~1200 DEG C.Wherein,
When deposition temperature range is 900~1000 DEG C, the number of plies of graphene can reach 10 layers.
Methane (CH is selected in this embodiment4) and hydrogen (H2) as reacting gas, flow-rate ratio is
Methane (CH4)：Hydrogen (H2)=150:10, depositing temperature is 750 DEG C, and pressure is 50mtorr.
Methods described is still further comprised from 1M FeCl3Or 0.1M (NH4)2S2O8Etch Ni metal,
And remove PMMA from acetone.
Step 2 is performed, the vibrating diaphragm 203 is patterned, the vibrating diaphragm with required plane pattern is formed.
Specifically, as shown in Figure 2 b, in this step by dry etching vibrating diaphragm 203,
Etching gas can be selected according to the difference of selected materials in the present invention, for example in the present invention can be with
Select CF4、CO2、O2、N2In one or more, the etching pressure can be 20-300mTorr,
Preferably 50-150mTorr, power is 200-600W.
Step 3 is performed, sacrifice layer 204 is formed in the substrate 201 and the vibrating diaphragm 203；Pattern
Change the sacrifice layer, be open with being formed in the middle part of the sacrifice layer, expose the vibrating diaphragm 203.
Specifically, as shown in Figure 2 b, wherein the sacrifice layer 204 can be from interlayer metal layer or oxygen
Compound layer.
The step of patterning the sacrifice layer includes：Mask layer, such as photoetching are formed on the sacrifice layer
Glue-line, is then exposed development to the photoresist layer, forms opening, then using the mask layer as
Sacrifice layer described in mask etch, is open with being formed in the middle part of the sacrifice layer, exposes the vibrating diaphragm
203。
Dry etching is selected in this step, for example, can select and select CF4、CO2、O2、N2In one
Plant or a variety of.
Step 4 is performed, in sacrifice layer engagement backboard wafer 205, to cover the sacrifice layer and institute
State opening.
Specifically, as shown in Figure 2 c, backboard wafer 205 is formed in this step, with follow-up step
Middle formation fixed electrode.
Therefore the backboard wafer 205 selects conductive material or the semi-conducting material of doping, alternatively,
In this embodiment from the silicon of doping.
Wherein, the Doped ions are not limited to a certain kind, such as can be B, P, N, As,
It will not enumerate.
In this step the backboard wafer 205 by eutectic bond or the method for thermal bonding with it is described sacrificial
Domestic animal layer bonding, to form integral structure.
Step 5 is performed, the backboard wafer is thinned, to reduce the thickness of the backboard wafer.
Specifically, as shown in Figure 2 d, in this step the front of the backboard wafer is ground to beat
The thin backboard wafer, obtains pattern as shown in Figure 2 d.
The thickness thinned in this step is not limited to a certain number range, and the method that thins can be selected
With method commonly used in the art, not according in a certain kind, it will not be repeated here.
Step 6 is performed, passivation layer is formed on the backboard wafer, to cover the backboard wafer.
Specifically, as shown in Figure 2 e, the passivation layer can select oxide either nitride or two
The combination of person.The passivation layer is from the oxide 206 and nitride being sequentially depositing in this embodiment
207。
The deposition can select deposition process commonly used in the prior art, for example, can be by chemical gas
Mutually deposit the shapes such as (CVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD) method
Into.Preferred ald (ALD) method in the present invention.
Step 7 is performed, the passivation layer is patterned, to form the first opening, exposes the backboard wafer；
The backboard wafer is patterned, to form some the second spaced openings in the backboard wafer.
Specifically, as shown in figure 2f, the passivation layer is patterned, with the insulating barrier 102 and described
The first opening is formed with passivation layer, exposes the backboard wafer.
Wherein, the forming method of first opening includes forming patterning first on the passivation layer
Mask layer, such as photoresist layer, then using the mask layer described in mask etch passivation layer, with institute
State and the first opening is formed in passivation layer.
The size of first opening is larger, to expose the backboard wafer in centre.
Then the backboard wafer is patterned, to form some spaced in the backboard wafer
Two openings, expose the opening in the sacrifice layer.
Specifically, the mask layer of patterning is formed on the backboard wafer, such as photoresist layer, then
Using the mask layer described in mask etch backboard wafer, with the backboard wafer formed it is some each other
Every second opening, as shown in Figure 2 g, formed backboard, while exposing the opening in the sacrifice layer.
Blue film layer can be formed on the passivation layer or backboard wafer in this step, with to the back of the body
Lath circle is protected.
Step 8 is performed, the back side of the substrate is patterned, to form back of the body chamber in the substrate, the bottom of at
Expose the vibrating diaphragm in portion.
Specifically, as shown in fig. 2h, the shape first on the passivation layer or backboard wafer in this step
Into blue film layer, to be protected to the backboard wafer.
Then the device is inverted, the back side of the substrate is etched, with the lower section of the vibrating diaphragm
The air formed in back of the body chamber, the cavity is then as dielectric layer, to form MEMS microphone capacitor.
Further, the mask layer of patterning, such as photoresist layer, then with institute are formed on the substrate
The back side that mask layer is substrate described in mask etch is stated, to form back of the body chamber in the substrate, in bottom dew
Go out the vibrating diaphragm.
In this step, it is etched from hydrofluoric acid HF or dilute hydrofluoric acid DHF, wherein composition is
HF:H2O=1:2-1:10, the etch temperature is 20-25 DEG C.
So far, the introduction of the preparation process of the MEMS of the embodiment of the present invention is completed.In above-mentioned step
After rapid, other correlation steps can also be included, here is omitted.Also, except above-mentioned steps it
Outside, the preparation method of the present embodiment can also include among each above-mentioned step or between different step
Other steps, these steps can be realized by various techniques of the prior art, no longer be gone to live in the household of one's in-laws on getting married herein
State.
Embodiment three
It is described present invention also offers a kind of electronic installation, including the MEMS described in embodiment one
MEMS is prepared according to the methods described of embodiment two.
The electronic installation of the present embodiment, can be mobile phone, tablet personal computer, notebook computer, net book,
Game machine, television set, VCD, DVD, navigator, DPF, camera, video camera, recording
Any electronic product such as pen, MP3, MP4, PSP or equipment, or any centre including circuit
Product.The electronic installation of the embodiment of the present invention, the above-mentioned circuit due to having used, thus with more preferable
Performance.
Wherein, Fig. 3 shows the example of mobile phone handsets.Mobile phone handsets 300 be equipped with including
Display portion 302, operation button 303, external connection port 304, loudspeaker 305 in shell 301,
Microphone 306 etc..
Wherein described mobile phone handsets include the MEMS described in embodiment one, the MEMS
Device includes substrate；Vibrating diaphragm, including graphene layer, positioned at the semiconductor substrate；Backboard, position
Above the vibrating diaphragm；Cavity, between the vibrating diaphragm and the backboard.It is described in the present invention to shake
Film selects graphene, and graphene is due to its excellent physics, chemical property, electric property and mechanical performance
So that the performance of the MEMS is further improved.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment
The purpose illustrated and illustrated is only intended to, and is not intended to limit the invention to described scope of embodiments
It is interior.In addition it will be appreciated by persons skilled in the art that the invention is not limited in above-described embodiment, root
More kinds of variants and modifications can also be made according to the teachings of the present invention, these variants and modifications all fall within this
Invent within scope claimed.Protection scope of the present invention is by the appended claims and its waits
Effect scope is defined.
Claims (10)
1. a kind of MEMS, it is characterised in that the MEMS includes：
Substrate (201)；
Vibrating diaphragm (203), the top positioned at the substrate (201), the vibrating diaphragm (203) includes graphite
Alkene layer；
Backboard (205), the top positioned at the vibrating diaphragm (203)；
Cavity, between the vibrating diaphragm (105) and the backboard (103).
2. the MEMS according to right 1, it is characterised in that adulterated in the graphene layer
There are the one or more in Au, Ag, Cu, Ni, P, In and Ga.
3. the MEMS according to right 1, it is characterised in that the back of the body is formed with the substrate
Chamber, vibrating diaphragm described in exposed portion.
4. the MEMS according to right 1, it is characterised in that shape in the backboard (205)
Into there is some openings.
5. a kind of preparation method of MEMS, it is characterised in that methods described includes：
Substrate (201) is provided, the vibrating diaphragm (203) of patterning, the vibrating diaphragm are formed with the substrate
(203) graphene layer is included；
The sacrifice layer with opening is formed in the substrate (201) and the vibrating diaphragm (203), it is described
Opening exposes the vibrating diaphragm (203)；
Backboard (205) is formed on the sacrifice layer, to cover the sacrifice layer and the opening, and
Cavity is formed between the vibrating diaphragm (105) and the backboard (103).
6. method according to claim 5, it is characterised in that in the graphene layer doped with
One or more in Au, Ag, Cu, Ni, P, In and Ga.
7. method according to claim 5, it is characterised in that the step of forming the sacrifice layer is wrapped
Include：
Sacrifice layer is formed in the substrate (201) and the vibrating diaphragm (203)；
The sacrifice layer is patterned, is open with being formed in the middle part of the sacrifice layer, exposes described shake
Film (203).
8. method according to claim 5, it is characterised in that form the backboard (205)
Step includes：
The sacrifice layer is engaged with backboard wafer, to cover the sacrifice layer and the opening, and in institute
State and form cavity between vibrating diaphragm (105) and the backboard (103)；
Backboard wafer described in thinning, to reduce the thickness of the backboard wafer；
Passivation layer is formed on the backboard wafer, to cover the backboard wafer；
The passivation layer is patterned, to form the first opening, backboard wafer described in exposed portion；
The backboard wafer is patterned, is opened with forming some spaced second in the backboard wafer
Mouthful.
9. method according to claim 5, it is characterised in that methods described still further comprises figure
The back side of substrate described in case, to form back of the body chamber, vibrating diaphragm described in exposed portion in the substrate.
10. a kind of electronic installation, it is characterised in that the electronic installation include Claims 1-4 it
MEMS described in one.
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