CN108083225A - A kind of MEMS device and preparation method thereof, electronic device - Google Patents
A kind of MEMS device and preparation method thereof, electronic device Download PDFInfo
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- CN108083225A CN108083225A CN201611021606.9A CN201611021606A CN108083225A CN 108083225 A CN108083225 A CN 108083225A CN 201611021606 A CN201611021606 A CN 201611021606A CN 108083225 A CN108083225 A CN 108083225A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
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Abstract
The present invention relates to a kind of MEMS device and preparation method thereof, electronic devices.The described method includes：Wafer is provided, vibrating diaphragm, sacrificial layer and backboard are sequentially formed in the front of the wafer；Photo-curing glue is formed at the back side of the wafer, to cover the back side of the wafer；Photoetching and curing are carried out to the photo-curing glue, with the back side of wafer described in exposed portion；The back side of the wafer of exposing is etched, to form back of the body chamber and expose the vibrating diaphragm, while retains the remaining photo-curing glue.In the method photo-curing glue (such as polyimides (polyimide) or the similar material of low temperature are utilized at the back side of the wafer, its solidification temperature etches back of the body chamber below 200 DEG C as mask (mask), it is only necessary to remove polymer (polymer).The photo-curing glue of the low temperature stays in the back side as permanent film simultaneously, can increase back of the body cavity space, promote the capacitance of microphone, so as to promote the sensibility of its low frequency range.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to which a kind of MEMS device and preparation method thereof, electronics fill
It puts.
Background technology
With the continuous development of semiconductor technology, intelligent hand in sensor (motion sensor) class product in the market
Machine, integrated CMOS and MEMS (MEMS) device have become most mainstream, state-of-the-art technology, and with technology more
Newly, the developing direction of this kind of transmission sensors product is the smaller size of scale, the electric property of high quality and lower loss.
Wherein, MEMS sensor is widely used in automotive electronics：As TPMS, engine oil pressure sensor, automobile are stopped
Vehicle system air pressure sensor, air intake manifold of automotive engine pressure sensor (TMAP), common rail for diesel engine pressure sensor；
Consumer electronics：Such as tire gauge, sphygmomanometer, cupboard scale, health scale, washing machine, dish-washing machine, refrigerator, micro-wave oven, oven, dust suction
Device pressure sensor, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level pressure
Sensor；Industrial electronic：Such as digital pressure gauge, digital stream scale, industrial batching weighing, electronic audiovisual field：Microphone etc.
Equipment.
With the development of 3D IC technologies, MEMS product is increasingly abundanter, and microphone products are being consumed as one of which
A large amount of uses in electron-like.Microphone is generally by vibrating diaphragm, backboard, air-gap, electrode and back of the body chamber composition.Wherein electrode material one
As for Cr/Au, connect backboard and vibrating diaphragm respectively.Vibrating diaphragm is equivalent to a mass block and a spring, and carries on the back chamber and be equivalent to one
Air spring.
When carrying out the deep hole silicon etching of back of the body chamber, the method used has wet method (the generally alkali such as TMAH, NaOH or KOH
Property solution) and two kinds of DRIE dry method.
We etch back of the body chamber using DRIE at present, but have the following problems：When chamber etching is carried on the back, photoresist
It is bombarded by plasma (Plasma), the hard shell on surface can be generated, so the combination removed photoresist with wet method of removing photoresist using dry method.
Dry method is removed photoresist, and is exactly traditional principle that (Asher) is ashed using oxygen plasma (Plasma).But ashing tools (Asher
Tool) continuously operation (run), chamber temp can raise, in this process using 150-170 DEG C of temperature, simultaneously as different
Product mix runs (mix-run), and the temperature of some 270 DEG C of products, chamber actual temperature is to 300 DEG C, but stand-by period (Q-
Time) in the case of not enough, chamber actual temperature is higher than 200 DEG C (diffusion temperatures of Cr), since Cr atomic radiuses are small in device
In Au atomic radiuses, Cr atoms permeatings enter Au film thickness, form CrOx on Au surfaces, cause component failure.
It needs to be improved further current described MEMS microphone and preparation method thereof to solve the above-mentioned problems.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
The present invention provides a kind of preparation method of MEMS device, the described method includes：
Wafer is provided, vibrating diaphragm, sacrificial layer and backboard are sequentially formed in the front of the wafer；
Photo-curing glue is formed at the back side of the wafer, to cover the back side of the wafer；
Photoetching and curing are carried out to the photo-curing glue, with the back side of wafer described in exposed portion；
The back side of the wafer of exposing is etched, to form back of the body chamber and expose the vibrating diaphragm, while retains residue
The photo-curing glue.
Optionally, the solidification temperature of the photo-curing glue is less than 200 DEG C.
Optionally, the thickness of the photo-curing glue is 5~100 μm.
Optionally, the photo-curing glue includes polyimides.
Optionally, the depth of the back of the body chamber is 300~400um.
Optionally, the method still further comprises the removal sacrificial layer, between the vibrating diaphragm and the backboard
The step of forming cavity.
Optionally, the sacrificial layer is removed using buffered etch technique.
The present invention also provides a kind of MEMS device, the MEMS device includes：
Wafer；
Vibrating diaphragm, on the front of the wafer；
Backboard, positioned at the top of the vibrating diaphragm；
Cavity, between the vibrating diaphragm and the backboard；
Chamber is carried on the back, the back side for being formed at the wafer and vibrating diaphragm described in exposed portion；
Photo-curing glue, on the back side for carrying on the back the wafer on the outside of chamber.
Optionally, the solidification temperature of the photo-curing glue is less than 200 DEG C.
Optionally, the thickness of the photo-curing glue is 5~100um
Optionally, the photo-curing glue includes polyimides.
Optionally, the depth of the back of the body chamber is 300~400um.
The present invention also provides a kind of electronic device, the electronic device includes above-mentioned MEMS device.
The present invention after vibrating diaphragm and backboard is formed, the back side of the wafer using low temperature photo-curing glue (such as
Polyimides (polyimide) or similar material, solidification temperature etch the back of the body below 200 DEG C as mask (mask)
Chamber, it is only necessary to using back side wet processing removal polymer (polymer) or when DRIE is etched, (in-situ) in situ removal
Polymer (polymer).The photo-curing glue of the low temperature stays in the back side as permanent film simultaneously, can increase back of the body cavity space,
The capacitance of microphone is promoted, so as to promote the sensibility of its low frequency range.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 is the preparation technology flow chart of heretofore described MEMS device；
Fig. 2 a-2c are the preparation process schematic diagram of heretofore described MEMS device；
Fig. 3 is the exemplary external view of mobile phone handsets in the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or during layer, then there is no elements or layer between two parties.It should be understood that although it can make
Various elements, component, area, floor and/or part are described with term first, second, third, etc., these elements, component, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, component, area, floor or part with it is another
One element, component, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to orientation shown in figure, spatial relationship term intention, which further includes, to be made
With the different orientation with the device in operation.For example, if the device overturning in attached drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or component, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, component and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions, this
Invention can also have other embodiment.
Embodiment one
The preparation method of the MEMS device of the present invention is described in detail below with reference to Fig. 1 and Fig. 2 a-2c, Fig. 1 is shown
The preparation technology flow chart of MEMS device of the present invention；The production method that Fig. 2 a-2c show MEMS device of the present invention
Schematic diagram.
Fig. 1 is the preparation technology flow chart of heretofore described MEMS device, specifically includes following steps：
Step S1：Wafer is provided, vibrating diaphragm, sacrificial layer and backboard are sequentially formed in the front of the wafer；
Step S2：Photo-curing glue is formed at the back side of the wafer, to cover the back side of the wafer；
Step S3：Photoetching and curing are carried out to the photo-curing glue, with the back side of wafer described in exposed portion；
Step S4：The back side of the wafer of exposing is etched, to form back of the body chamber and expose the vibrating diaphragm, is protected simultaneously
Stay the remaining photo-curing glue.
In the following, the specific embodiment of the preparation method of the MEMS device of the present invention is described in detail.
First, step 1 is performed, wafer 201 is provided, vibrating diaphragm 203, sacrificial layer are sequentially formed in the front of the wafer
205 and backboard 204.
Specifically, as shown in Figure 2 a, wherein the wafer can be at least one of following material being previously mentioned：Silicon,
Silicon (SSOI) is stacked on silicon-on-insulator (SOI), insulator, SiGe (S-SiGeOI), germanium on insulator are stacked on insulator
SiClx (SiGeOI) and germanium on insulator (GeOI) etc..
In addition, active area can be defined on wafer.Other active devices can also be included on the active region, be
Convenience, there is no indicate in the shown figure.
Wherein, various front-end devices can be formed on the wafer, the front-end devices can include active device, nothing
Source device and MEMS device etc..
Such as various transistors can be formed on the wafer for forming various circuits, radio-frequency devices are penetrated for being formed
Frequency component or module, interconnection structure are used to connect the other assemblies in transistor, radio-frequency devices and front-end devices.
Wherein, transistor can be normal transistor, high-k/metal gate transistors, fin transistor or other are suitable
Transistor.Interconnection structure can include metal layer (such as layers of copper or aluminium layer), metal plug etc..Radio-frequency devices can include inductance
(inductor) devices such as.
In addition to including transistor, radio-frequency devices and interconnection structure, front-end devices can also include other various feasible groups
Part, such as resistance, capacitance, MEMS device etc., are not defined herein.
Such as MEMS microphone can be formed in the wafer in the present invention, the microphone include at least vibrating diaphragm,
Backboard and the cavity between the vibrating diaphragm, backboard, the operation principle of the MEMS microphone is by vibrating diaphragm (Membrane)
Movement generate capacitance variation, utilize capacitance change carry out computing and work.
Certainly other devices can also be further formed in the wafer, this is no longer going to repeat them.
Insulating layer is formed between the wafer and the vibrating diaphragm, wherein described is oxide, it is, for example, thermal oxide,
The insulation material layer can be formed by thermal oxide.
The oxide skin(coating) is SiO in this embodiment2Layer, the SiO2Layer is by rapid thermal oxidation process (RTO) come shape
Into thickness is 8-50 angstroms, but is not limited to the thickness.
Optionally, still further comprised before the insulating layer is formed and patterned step is carried out to the wafer, with
Groove is formed in the wafer.
Wherein, the groove is several spaced square grooves, such as the groove can uniformly be distributed in institute
State wafer.
Wherein, forming the method for the groove includes：Photoresist layer and exposure imaging are formed in the wafer, is covered with being formed
Film, using the photoresist layer as wafer described in mask etch, to form the groove on the surface of the wafer.
The depth of wherein described groove is not limited to a certain numberical range, can be set as needed.
Dry etching can be selected in this step, and dry etching includes but not limited to reactive ion etching (RIE), ion
Beam etching or plasma etching.
Wafer described in selecting O base etchant etchings in this step, selects O in one embodiment of this invention2Atmosphere,
Other a small amount of gas such as CF can also be added in simultaneously4、CO2、N2, the etching pressure can be 50-200mTorr, be preferably
100-150mTorr, power 200-600W, in the present invention the etching period be 5-80s, more preferable 10-60s, while
Larger gas flow is selected in the present invention, preferably, in O of the present invention2Flow for 30-300sccm, more preferably
50-100sccm。
Optionally, the insulation material layer can also be patterned in this step, to remove on the outside of the wafer
The insulation material layer, only retain be located at the wafer intermediate region on the insulation material layer.
Vibrating diaphragm 203 is formed on the insulating layer, wherein, the vibrating diaphragm 203 can be semiconductor, such as polysilicon；
Can be other metals, such as aluminium, copper, titanium or chromium.In addition, the vibrating diaphragm 203 can also be other materials, such as reactive resin
BCB。
The vibrating diaphragm 203 selects polysilicon in this embodiment.
Wherein, including but not limited to epitaxial growth method, organic synthesis method, chemical vapor deposition can be used in the vibrating diaphragm 203
(CVD) or the deposition methods such as plasma reinforced chemical vapour deposition method (PECVD) are formed.
Wherein, the thickness of the vibrating diaphragm 203 can be that 10K Izods are right, but be not limited to that a certain numberical range.
Form sacrificial layer and backboard in the top of the vibrating diaphragm, in subsequent technique in the vibrating diaphragm and the backboard
Between form cavity.
Specifically, sacrificial layer is formed on the wafer, to cover the vibrating diaphragm, the sacrificial layer is by using such as oxygen
The inorganic insulation layer of SiClx layer, silicon nitride layer or silicon oxynitride layer, such as comprising polyvinyl phenol, polyimides or siloxanes
Deng the insulating layer of layer etc. formed.In addition, polyvinyl phenol, polyimides or siloxanes can be discharged effectively by droplet
Method, the art of printing or spin-coating method are formed.
The sacrificial layer can select deposition method commonly used in the prior art, such as can pass through chemical vapor deposition
(CVD) formation such as method, physical vapour deposition (PVD) (PVD) method or atomic layer deposition (ALD) method.Preferred atomic layer deposition in the present invention
(ALD) method.
It after the sacrificial layer is formed, still further comprises and patterned step is carried out to the sacrificial layer, with removal
The sacrificial layer in outside, to expose the vibrating diaphragm of marginal position.
Backboard is formed on the sacrificial layer, to form fixed electrode in subsequent steps.
Wherein, the backboard selects conductive material or the semi-conducting material of doping, optionally, selects in this embodiment
The silicon of doping.
Wherein, the Doped ions are not limited to a certain kind, such as can be B, P, N, As etc., will not enumerate.
The sacrificial layer and the vibrating diaphragm exposed is completely covered in wherein described backboard.
The method still further comprises the step of patterning the backboard, to form acoustic aperture in the backboard, wherein,
The acoustic aperture exposes the sacrificial layer.
Wherein, the step of forming the acoustic aperture, which is included on the backboard, forms patterned photoresist layer or organic point
Layer of cloth (Organic distribution layer, ODL), siliceous bottom antireflective coating (Si-BARC) and positioned at top
The photoresist layer (not shown) of the patterning in portion, wherein pattern definition on the photoresist figure of the opening
Case, then using the photoresist layer as the pattern that mask layer etches organic distribution layer, bottom antireflective coating formation is open,
Then using organic distribution layer, bottom antireflective coating as mask, the backboard is etched, to form the opening, exposes institute
State the vibrating diaphragm that sacrificial layer exposes marginal position simultaneously.
Deep reaction ion etching (DRIE) method is selected to form the acoustic aperture in this step, reactive ion etching is to utilize
The active group that high frequency glow discharge generates is chemically reacted with the material that is corroded, and forming volatile products makes sample surfaces former
Son comes off from lattice, the equipment prepared so as to fulfill sample surfaces Micropicture.
Gas hexa-fluoride (SF is selected in the deep reaction ion etching (DRIE) step6) as process gas, it applies
Add radio-frequency power supply so that hexa-fluoride reaction air inlet forms high ionization, controls in the etching step operating pressure to be
20mTorr-8Torr, power 600W, frequency 13.5MHz, Dc bias can the continuous control in -500V-1000V, protect
The needs of anisotropic etching are demonstrate,proved, select deep reaction ion etching (DRIE) that very high etching photoresist can be kept to select ratio.
Deep reaction ion etching (DRIE) system can select the common equipment of ability, it is not limited to a certain model.
Optionally, metal pad is formed on the vibrating diaphragm and/or the backboard exposed in said opening, for rear
Continuous interconnection, the metal pad selects metal material, such as can select metallic copper, as shown in Figure 2 a.
The deposition of the pad metal layer can select deposition method commonly used in the prior art, such as can be passing through
Learn the formation such as vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or atomic layer deposition (ALD) method.In the present invention preferably
Atomic layer deposition (ALD) method.
Step 2 is performed, photo-curing glue 202 is formed at the back side of the wafer and carries out photoetching and curing, with exposed division
Divide the back side of the wafer.
Specifically, as shown in Figure 2 a, photo-curing glue 202 is formed at the back side of the wafer, in the present invention in order to keep away
Exempt from the temperature that the Cr atoms permeatings in device enter to reduce manufacturing process in Au film thickness, select the photo-curing of low temperature in the present invention
Glue replaces the photoresist used in current technique, such as the solidification temperature of the photo-curing glue is less than 200 DEG C.
Wherein, the thickness of the photo-curing glue is 5~100um
Optionally, the photo-curing glue includes polyimides or other similar materials, it is not limited to a certain.
Step 3 is performed, the back side of the wafer of exposing is etched, to form back of the body chamber and expose the vibrating diaphragm, together
When retain the photo-curing glue.
Specifically, as shown in Figure 2 b, using the photo-curing glue it is in this step mask to the wafer of exposing
The back side is etched, to form back of the body chamber in the back side of the wafer.
Wherein, back of the body chamber is etched using the photo-curing glue as mask in the present invention, the light in step 2
Polymer may be generated by carving in the etching step in step and step 3, only be needed in this embodiment wet using the back side
Method technique removes the polymer or when selecting DRIE etching back of the body chambers, in situ to remove polymer.
Wherein, the wet processing and DRIE etching technics can select method commonly used in the art, not limit to
In a certain kind.
Meanwhile the photo-curing glue stays in the back side as permanent film, can increase back of the body cavity space, promotes the electricity of microphone
Capacitance, so as to promote the sensibility of its low frequency range.
It selects in this step and in this step deep reaction ion etching (DRIE) method is selected to form the back of the body chamber.
Wherein, the various parameters in deep reaction ion etching (DRIE) method can select conventional parameter, herein
It repeats no more.
Step 4 is performed, removes the sacrificial layer between the vibrating diaphragm and the backboard, in the vibrating diaphragm and described
Cavity is formed between backboard, as shown in Figure 2 c.
Specifically, the step of forming the cavity includes：
Step 1：Protective layer is formed on the wafer, the vibrating diaphragm and the sacrificial layer, to cover the sacrificial layer；
Step 2：The protective layer and the vibrating diaphragm are patterned, to form opening simultaneously in the protective layer and the vibrating diaphragm
Expose the sacrificial layer；
Step 3：Remove the sacrificial layer between the vibrating diaphragm and the backboard.
Specifically, the protective layer can select passivating material commonly used in the art, and in this step, the protective layer is
One or more in PESIN layers, PETEOS layers, SiN layer and polysilicon layer.
The protective layer and the backboard are patterned, to form opening, exposes the sacrificial layer.
Wherein, when the sacrificial layer selects oxide skin(coating), the wet etching of BOE can be selected to remove the expendable material
Layer.
The mass fraction of the BOE etching solutions is 0.1%-10%, and the wet etching temperature is 25-90 DEG C, described wet
Method etching period is 100~10000s, but be not limited to that the example, can also select other methods commonly used in the art.
The step of being cleaned to the MEMS device is can further include after the cavity is formed.
So far, the introduction of the correlation step of the preparation method of the MEMS device of the embodiment of the present invention is completed.The method
The step of can also including forming transistor and other correlation steps, details are not described herein again.Also, except above-mentioned steps it
Outside, the preparation method of the present embodiment can also include other steps among above-mentioned each step or between different steps, this
A little steps can realize that details are not described herein again by the various techniques in current technique.
The method of the invention utilizes the photo-curing of low temperature after vibrating diaphragm and backboard is formed, at the back side of the wafer
Glue (such as polyimides (polyimide) or similar material, solidification temperature are come below 200 DEG C as mask (mask)
Etching back of the body chamber, it is only necessary to using back side wet processing removal polymer (polymer) or when DRIE is etched, (in- in situ
Situ polymer (polymer)) is removed.The photo-curing glue of the low temperature stays in the back side as permanent film simultaneously, can increase
Cavity space is carried on the back, the capacitance of microphone is promoted, so as to promote the sensibility of its low frequency range.
Embodiment two
The present invention also provides a kind of MEMS device, the MEMS device is prepared by method described in embodiment one
It arrives.
The MEMS device includes：
Wafer 201；
Vibrating diaphragm 203, on the front of the wafer；
Backboard 204, positioned at the top of the vibrating diaphragm；
Cavity, between the vibrating diaphragm and the backboard；
Chamber is carried on the back, the back side for being formed at the wafer and vibrating diaphragm described in exposed portion；
Photo-curing glue 202, on the back side for carrying on the back the wafer on the outside of chamber.
Specifically, wherein the wafer can be at least one of following material being previously mentioned：Silicon, silicon-on-insulator
(SOI), silicon (SSOI) is stacked on insulator, SiGe (S-SiGeOI), germanium on insulator SiClx are stacked on insulator
(SiGeOI) and germanium on insulator (GeOI) etc..
In addition, active area can be defined on wafer.Other active devices can also be included on the active region, be
Convenience, there is no indicate in the shown figure.
Wherein, various front-end devices can be formed on the wafer, the front-end devices can include active device, nothing
Source device and MEMS device etc..
Such as various transistors can be formed on the wafer for forming various circuits, radio-frequency devices are penetrated for being formed
Frequency component or module, interconnection structure are used to connect the other assemblies in transistor, radio-frequency devices and front-end devices.
Wherein, transistor can be normal transistor, high-k/metal gate transistors, fin transistor or other are suitable
Transistor.Interconnection structure can include metal layer (such as layers of copper or aluminium layer), metal plug etc..Radio-frequency devices can include inductance
(inductor) devices such as.
In addition to including transistor, radio-frequency devices and interconnection structure, front-end devices can also include other various feasible groups
Part, such as resistance, capacitance, MEMS device etc., are not defined herein.
Such as MEMS microphone can be formed in the wafer in the present invention, the microphone include at least vibrating diaphragm,
Backboard and the cavity between the vibrating diaphragm, backboard, the operation principle of the MEMS microphone is by vibrating diaphragm (Membrane)
Movement generate capacitance variation, utilize capacitance change carry out computing and work.
Certainly other devices can also be further formed in the wafer, this is no longer going to repeat them.
Insulating layer is formed between the wafer and the vibrating diaphragm, wherein described is oxide, it is, for example, thermal oxide,
The insulation material layer can be formed by thermal oxide.
The oxide skin(coating) is SiO in this embodiment2Layer, the SiO2Layer is by rapid thermal oxidation process (RTO) come shape
Into thickness is 8-50 angstroms, but is not limited to the thickness.
Optionally, still further comprised before the insulating layer is formed and patterned step is carried out to the wafer, with
Groove is formed in the wafer.
Wherein, the groove is several spaced square grooves, such as the groove can uniformly be distributed in institute
State wafer.
Vibrating diaphragm 203 is formed on the insulating layer, wherein, the vibrating diaphragm 203 can be semiconductor, such as polysilicon；
Can also be other metals, such as aluminium, copper, titanium or chromium.In addition, the vibrating diaphragm 203 can also be other materials, such as activity tree
Fat BCB.
The vibrating diaphragm 203 selects polysilicon in this embodiment.
Wherein, including but not limited to epitaxial growth method, organic synthesis method, chemical vapor deposition can be used in the vibrating diaphragm 203
(CVD) or the deposition methods such as plasma reinforced chemical vapour deposition method (PECVD) are formed.
Wherein, the thickness of the vibrating diaphragm 203 can be that 10K Izods are right, but be not limited to that a certain numberical range.
There is backboard above the vibrating diaphragm, cavity is formed between the vibrating diaphragm and the backboard.
Wherein, the backboard selects conductive material or the semi-conducting material of doping, optionally, selects in this embodiment
The silicon of doping.
Wherein, the Doped ions are not limited to a certain kind, such as can be B, P, N, As etc., will not enumerate.
Acoustic aperture is formed in the backboard.
Optionally, metal pad is formed on the vibrating diaphragm and/or the backboard exposed in the opening of the backboard, with
For subsequent interconnection, the metal pad selects metal material, such as can select metallic copper.
Photo-curing glue 202 is formed at the back side of the wafer, in the present invention in order to avoid the Cr atoms in device
Diffusing into Au film thickness reduces the temperature of manufacturing process, and the photo-curing glue of low temperature is selected to replace current technique in the present invention
The middle photoresist used, such as the solidification temperature of the photo-curing glue are less than 200 DEG C.
Wherein, the thickness of the photo-curing glue is 5~100um.
Optionally, the photo-curing glue includes polyimides or other similar materials, it is not limited to a certain.
Back of the body chamber is formed in the wafer rear and exposes the vibrating diaphragm, while retains the photo-curing glue.
Device of the present invention after vibrating diaphragm and backboard is formed, utilizes low in preparation process at the back side of the wafer
Photo-curing glue (such as polyimides (polyimide) or similar material, the solidification temperature conduct below 200 DEG C of temperature
Mask (mask) etches back of the body chamber, it is only necessary to be etched using back side wet processing removal polymer (polymer) or in DRIE
When, (in-situ) in situ removal polymer (polymer).The photo-curing glue of the low temperature stays in the back of the body as permanent film simultaneously
Face can increase back of the body cavity space, promote the capacitance of microphone, so as to promote the sensibility of its low frequency range.
Embodiment three
The present invention also provides a kind of electronic devices, including the MEMS device described in embodiment two, the MEMS device root
It is prepared according to one the method for embodiment.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, Digital Frame, camera, video camera, recording pen, MP3, MP4, PSP is set
Standby or any intermediate products including circuit.The electronic device of the embodiment of the present invention, due to the use of above-mentioned MEMS devices
Part, thus with better performance.
Wherein, Fig. 3 shows the example of mobile phone handsets.Mobile phone handsets 300, which are equipped with, to be included in shell 301
Display portion 302, operation button 303, external connection port 304, loud speaker 305, microphone 306 etc..
Wherein described mobile phone handsets include the MEMS device described in embodiment two, and the MEMS device includes wafer；
Vibrating diaphragm, on the front of the wafer；Backboard, positioned at the top of the vibrating diaphragm；Cavity, positioned at the vibrating diaphragm and the backboard
Between；Chamber is carried on the back, the back side for being formed at the wafer and vibrating diaphragm described in exposed portion；Photo-curing glue, on the outside of the back of the body chamber
The wafer the back side on.The device in preparation process after vibrating diaphragm and backboard is formed, at the back side of the wafer
Using low temperature photo-curing glue (such as polyimides (polyimide) or similar material, solidification temperature 200 DEG C with
It is lower that mask (mask) is used as to etch back of the body chamber, it is only necessary to using back side wet processing removal polymer (polymer) or in DRIE
During etching, (in-situ) in situ removal polymer (polymer).The photo-curing glue of the low temperature is stayed as permanent film simultaneously
Overleaf, back of the body cavity space can be increased, promote the capacitance of microphone, so as to promote the sensibility of its low frequency range.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (13)
1. a kind of preparation method of MEMS device, which is characterized in that the described method includes：
Wafer is provided, vibrating diaphragm, sacrificial layer and backboard are sequentially formed in the front of the wafer；
Photo-curing glue is formed at the back side of the wafer, to cover the back side of the wafer；
Photoetching and curing are carried out to the photo-curing glue, with the back side of wafer described in exposed portion；
The back side of the wafer of exposing is etched, to form back of the body chamber and expose the vibrating diaphragm, while retains remaining institute
State photo-curing glue.
2. according to the method described in claim 1, it is characterized in that, the solidification temperature of the photo-curing glue is less than 200 DEG C.
3. according to the method described in claim 1, it is characterized in that, the thickness of the photo-curing glue is 5~100 μm.
4. according to the method described in claim 1, it is characterized in that, the photo-curing glue includes polyimides.
5. according to the method described in claim 1, it is characterized in that, the depth of the back of the body chamber is 300~400um.
6. according to the method described in claim 1, it is characterized in that, the method still further comprises the removal sacrificial layer,
The step of to form cavity between the vibrating diaphragm and the backboard.
7. according to the method described in claim 6, it is characterized in that, remove the sacrificial layer using buffered etch technique.
8. a kind of MEMS device, which is characterized in that the MEMS device includes：
Wafer；
Vibrating diaphragm, on the front of the wafer；
Backboard, positioned at the top of the vibrating diaphragm；
Cavity, between the vibrating diaphragm and the backboard；
Chamber is carried on the back, the back side for being formed at the wafer and vibrating diaphragm described in exposed portion；
Photo-curing glue, on the back side for carrying on the back the wafer on the outside of chamber.
9. according to the MEMS device described in right 8, which is characterized in that the solidification temperature of the photo-curing glue is less than 200 DEG C.
10. according to the MEMS device described in right 8, which is characterized in that the thickness of the photo-curing glue is 5~100um.
11. according to the MEMS device described in right 8, which is characterized in that the photo-curing glue includes polyimides.
12. according to the MEMS device described in right 8, which is characterized in that the depth of the back of the body chamber is 300~400um.
13. a kind of electronic device, which is characterized in that the electronic device includes the MEMS devices described in one of claim 8 to 12
Part.
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