CN107210239A - 安装装置和安装方法 - Google Patents

安装装置和安装方法 Download PDF

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Publication number
CN107210239A
CN107210239A CN201680007458.7A CN201680007458A CN107210239A CN 107210239 A CN107210239 A CN 107210239A CN 201680007458 A CN201680007458 A CN 201680007458A CN 107210239 A CN107210239 A CN 107210239A
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semiconductor chip
resin sheet
hot
electrode
welding head
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CN107210239B (zh
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寺田胜美
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Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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Abstract

提供安装装置和安装方法，当将在上下两面具有电极的半导体芯片以隔着热硬化性的粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上时，不存在因逸出气体造成的弊端并确保接合品质。具体来说，提供安装装置和安装方法，其特征在于，该安装装置具有热压焊头，其具有在保持着半导体芯片的状态下进行加热而将半导体芯片压焊于被接合物的功能，所述热压焊头在保持所述半导体芯片的面上具有吸附孔，该安装装置具有与所述吸附孔连通而对吸附孔内部进行减压的减压机构，该安装装置还具有向所述半导体芯片与所述热压焊头之间提供树脂片的树脂片提供机构，在使突出于所述半导体芯片上表面的电极埋没在所述树脂片中之后进行热压焊。

Description

安装装置和安装方法
技术领域
本发明涉及安装装置和安装方法。更详细地说，涉及如下的安装装置和安装方法：将在上下两面具有电极的半导体芯片以隔着粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上。
背景技术
作为将半导体芯片安装在基板上的方法，公知有倒装芯片工艺。在倒装芯片工艺中，使用图11所示的倒装芯片焊接机50对半导体芯片的凸块电极和基板的电极进行热压焊而使它们接合。在图11的倒装芯片焊接机50中，具有由图12所示的构造构成的热压焊头57，该热压焊头57具有如下功能：一边利用加热器58来加热通过对附件59的吸附孔590内进行减压而吸附保持了的半导体芯片C，一边对基板S0进行热压焊。
在倒装芯片工艺中，为了确保接合部的可靠性，利用树脂对半导体芯片与基板的间隙进行密封。作为树脂密封的方法，以往在接合后将液状树脂注入到间隙中而进行热硬化的方法是比较普遍的，但也大量地提出了如下工艺：将具有粘接性的树脂以未硬化状态配置在半导体芯片与基板之间，在该状态下进行热压焊(例如专利文献1)。
将作为粘接剂的未硬化树脂配置在半导体芯片与基板之间并在该状态下进行的倒装芯片工艺能够同时进行电极彼此的接合和树脂密封。因此，还是适用于对贯通电极那样的在上下两面具有电极的半导体芯片进行层叠的三维安装的工艺。
现有技术文献
专利文献
专利文献1：日本特开2004-315688号公报
发明内容
发明所要解决的课题
贯通电极那样的在上下两面具有电极的半导体芯片与通常的半导体芯片不同，如图13所示在半导体芯片C上表面上也具有基于电极ET的突起。因此，在利用倒装芯片焊接机50的热压焊头57来进行吸附保持的情况下，在热压焊头57的附件59与半导体芯片C上表面之间产生间隙。由于该间隙很微小，所以能够将在上下两面具有电极(ET、EB)的半导体芯片C保持在附件上。但是，半导体芯片C周边的空气会持续地进入到减压状态下的吸附孔590内部(图14)。
因此，在将在上下两面具有电极的半导体芯片C隔着未硬化树脂R热压焊到被接合物S(配线基板或在配线基板上层叠了在上下两面具有电极的半导体的被接合物)上的情况下，因加热而从树脂产生逸出气体G，该逸出气体G被吸引到吸附孔内部590。在该逸出气体G中含有有机成分等，在进入到吸附孔590内部的过程中，逸出气体成分会附着在附件59的吸附面或吸附孔590内部。逸出气体成分对该附件59的吸附面或吸附孔590内部的附着会因重复进行热压焊而逐渐积累，有时也会因污染附件59的吸附面或堵塞吸附孔590而产生吸附不良。
并且，由于重复进行加热，所以还存在如下担心：所附着的逸出气体成分变成碳化物，该碳化物从吸附孔落下到半导体芯片C上而引起品质不良。
因此，如图15那样，为了消除半导体芯片C上表面与附件59的吸附面之间的间隙，考虑在附件59的吸附面设置对半导体芯片C上表面的电极ET进行收纳的凹部592。
但是，如果设置对半导体芯片C上表面的电极ET进行收纳的凹部592，则由于凹部592的容积比电极ET大，所以在凹部592与电极ET之间产生间隙。当产生这样的间隙时，在该凹部592中从附件59到半导体芯片C的传热被阻碍，半导体芯片C的加热不充分。特别是对于在上下两面的电极中使用了贯通电极的半导体芯片，会使针对下表面的电极的加热不充分而成为接合不良的原因。并且，在压力较大的情况下，在凹部592的周边产生剪切应力TA(图16而对半导体芯片造成损伤，因此不优选。
另一方面，如果附件59的吸附面为平坦，则只会对突出于半导体芯片C上表面的电极ET施加热和负载，半导体芯片C下侧的未硬化树脂R的流动性变低，在半导体芯片C与被接合物S的电极之间咬入树脂或产生空隙而成为接合不良的原因。
并且，也考虑了在到达产生逸出气体G的温度之前停止吸附而阻止逸出气体成分流入到吸附孔590内然后进行加热的方法，但存在如下担心：由于气流根据吸附孔590的内部与外部的压差朝向半导体芯片C逆向流动，所以半导体芯片C因在加热时的树脂的流动而产生位置偏移。进而，当加热开始被延后时生产节拍变长，生产性降低。
本发明是鉴于上述问题而完成的，提供安装装置和安装方法，当将在上下两面具有电极的半导体芯片以隔着粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上时，既不会出现因逸出气体造成的弊端，又确保了接合品质。
用于解决课题的手段
为了解决上述的课题，技术方案1所述的发明是一种安装装置，其将在上下两面具有电极的半导体芯片以隔着热硬化性的粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上，其特征在于，
该安装装置具有热压焊头，该热压焊头具有在保持着所述半导体芯片的状态下进行加热而将该半导体芯片压焊于所述被接合物的功能，
所述热压焊头在对所述半导体芯片进行保持的面上具有吸附孔，
所述安装装置具有减压机构，该减压机构与所述吸附孔连通，对吸附孔内部进行减压，
所述安装装置还具有树脂片提供机构，该树脂片提供机构向所述半导体芯片与所述热压焊头之间提供树脂片，
使突出于所述半导体芯片上表面的电极埋没在所述树脂片中，然后进行热压焊。
技术方案2所述的发明是技术方案1所述的安装装置，其特征在于，
所述安装装置还具有控制部，该控制部具有对所述热压焊头的加热温度进行设定的功能，
所述减压机构具有压力计，该压力计对所述吸附孔内部的压力进行测量，将测量值输出给所述控制部，
所述控制部具有根据所述压力计的测量值对所述热压焊头的加热温度的设定值进行变更的功能。
技术方案3所述的发明是技术方案1或2所述的安装装置，其特征在于，
所述树脂片提供机构具有如下的开孔功能：在树脂片的与所述吸附孔对应的位置形成贯通孔。
技术方案4所述的发明是技术方案1～3中的任意一项所述的安装装置，其中，
所述安装装置具有如下的功能：在所述热压焊之后，在使所述树脂片与所述热压焊头表面紧贴的状态下，使所述树脂片从所述半导体芯片分开。
技术方案5所述的发明是技术方案4所述的安装装置，其特征在于，
所述安装装置具有使所述该压焊头与所述树脂片分开的移动构件。
技术方案6所述的发明是一种安装方法，将在上下两面具有电极的半导体芯片以隔着热硬化性的粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上，其特征在于，该安装方法具有如下的工序：
利用热压焊头隔着树脂片对所述半导体芯片进行吸附保持，其中，所述树脂片在与热压焊头的吸附孔对应的位置形成有贯通孔；
在使所述热压焊头成为规定的温度以下的状态下，使突出于所述半导体芯片上表面的电极埋没在所述树脂片中；以及
使所述热压焊头的设定温度上升，将所述半导体芯片下表面的电极和被接合物上表面的电极接合，并且使所述粘接剂热硬化。
技术方案7所述的发明是技术方案6所述的安装方法，其特征在于，
在使突出于所述半导体芯片上表面的电极埋没在所述树脂片中的工序中，对所述吸附孔内的压力进行监视，在所述压力成为规定的值以下之后，使所述热压焊头的设定温度上升到将所述半导体芯片下表面的电极和被接合物上表面的电极接合并且使所述粘接剂热硬化的温度。
技术方案8所述的发明是技术方案6或7所述的安装方法，其特征在于，
在所述热压焊之后，在使所述树脂片与所述热压焊头表面紧贴的状态下，使所述树脂片从所述半导体芯片分开。
技术方案9所述的发明是技术方案6～8中的任意一项所述的安装方法，其特征在于，
在使所述树脂片从所述半导体芯片分开之后，使所述树脂片从所述热压焊头分开。
发明效果
根据本发明，当将在上下两面具有电极的半导体芯片以隔着粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上时，由于因突出于半导体芯片上表面的电极而产生的间隙被树脂片堵住，所以防止了逸出气体与半导体芯片上表面侧接触，能够进行既不会出现因逸出气体造成的弊端又确保了接合品质的安装。
附图说明
图1是示出本发明的一个实施方式的安装装置的整体结构的图。
图2是对在本发明中作为对象的半导体芯片和被接合物进行说明的图。
图3是示出本发明的一个实施方式的安装装置的热压焊头的结构的图。
图4是示出本发明的一个实施方式的安装装置的控制结构的图。
图5的(a)是示出树脂片与本发明的一个实施方式的附件分开了的状态的图，(b)是示出树脂片紧贴在该附件表面上的状态的图。
图6的(a)是示出本发明的一个实施方式的穿孔装置的针部与附件的吸附孔进行了对位的状态的图，(b)是示出该穿孔装置在树脂片上形成开口部的过程的图，(c)是示出该穿孔装置在树脂片上形成开口部的过程进展的状态的图，(d)是示出通过该穿孔装置在树脂片上形成了开口部的状态的图。
图7的(a)是说明本发明的一个实施方式的安装装置的热压焊头前端部的附件隔着树脂片对半导体芯片进行吸附的状态的图，(b)是示出在被该附件隔着树脂片吸附的半导体芯片上表面上突出的电极埋没在树脂片中的状态的图。
图8的(a)是示出半导体芯片的电极埋没在树脂片中的示意图，(b)是示出半导体芯片的电极埋没在树脂片中的一例的图。
图9的(a)是示出通过本发明的一个实施方式的安装装置使半导体芯片与被接合物接近的过程的图，(b)是示出在该过程中在半导体芯片上表面突出的电极埋没在树脂片中的状态的图，(c)是示出通过该过程之后的热压焊工序将半导体芯片安装在被接合物上的状态的图，(d)是示出在热压焊工序之后将树脂片从半导体芯片剥离后的状态的图。
图10的(a)是示出在本发明的一个实施方式的热压焊工序之后树脂片与热压焊头前端部的附件紧贴的状态的图，(b)是示出将树脂片从该附件剥离后的状态的图，(c)是示出对该附件正下方的树脂片进行更新的状态的图。
图11是示出以往的倒装芯片焊接机的结构的图。
图12是示出通过以往的倒装芯片焊接机的热压焊头对仅在下表面具有电极的半导体芯片进行保持的状态的图。
图13是示出通过以往的倒装芯片焊接机的热压焊头对在上下两面具有电极的半导体芯片进行保持的状态的图。
图14是对通过以往的倒装芯片焊接机对在上下两面具有电极的半导体芯片进行热压焊时产生的逸出气体进行说明的图。
图15是示出通过以往的倒装芯片焊接机在热压焊头的附件上设置凹部而对在上下两面具有电极的半导体芯片进行保持的状态的图。
图16是对在以往的倒装芯片焊接机热压焊头的附件上设置凹部而对在上下两面具有电极的半导体芯片进行热压焊时产生的问题点进行说明的图。
具体实施方式
使用附图对本发明的实施方式进行说明。
图1是作为本发明的一个实施方式的安装装置1。
利用安装装置1进行安装的半导体芯片C如图2所示因贯通电极而在上下两面具有电极，下表面的电极EB成为在前端部具有焊点BS的焊接凸块，上表面的电极ET也从上表面突出数μm左右。被接合物S是在图2的(a)所示的基板S0或图2的(b)所示的配线基板S0上层叠半导体芯片C而得的被接合物。并且，在本实施方式中，作为将半导体芯片C和被接合物S粘接的粘接剂，使用以热硬化性树脂为主要成分的非导电性膜(以下，称为“NCF”)。虽然NCF被粘贴在被接合物S的表面，但并不仅限于此，也可以粘贴在半导体芯片C的下表面。进而，也可以使用以热硬化性树脂为主要成分的非导电性浆体(以下，称为“NCP”)来作为粘接剂。
关于图1的安装装置1，在将NCF夹设于被接合物S与半导体芯片C之间的状态下，通过焊点BS的熔接将半导体芯片C下表面的电极EB与被接合物S上表面的电极ES接合，将半导体芯片C安装在被接合物S之上。安装装置1具有：基台3、载台4、支承架5、热压焊单元6、热压焊头7、加热器8、附件9、树脂片提供机构2、图像识别装置10以及控制部11。并且，树脂片提供机构2包含树脂片卷出部2S和树脂片卷取部2R来作为构成要素。
在以下的说明中，将从树脂片卷出部2S向树脂片卷取部2R搬送树脂片P的方向设为X轴方向，将与该X轴方向垂直的Y轴方向，将热压焊头7的与被接合物S垂直的移动方向设为Z轴方向，将以Z轴为中心进行旋转的方向设为θ方向来说明。
基台3是构成安装装置1的主要的构造体。基台3构成为具有充分的刚性。基台3对载台4和支承架5进行支承。
载台4一边对被接合物S进行保持，一边使其移动至任意的位置。载台4构成为在驱动单元4a上安装有能够对被接合物S进行吸附保持的吸附工作台4b。载台4安装在基台3上，构成为能够通过驱动单元4a使吸附工作台4b在X轴方向、Y轴方向和θ方向上移动。即，载台4在基台3上构成为能够使吸附在吸附工作台4b上的被接合物S在X轴方向、Y轴方向和θ方向上移动。另外，在本实施方式中，载台4通过吸附对被接合物S进行保持，但并不仅限于此。
支承架5对热压焊单元6进行支承。支承架5构成为从基台3的载台4附近朝向Z轴方向延伸。
作为加压单元的热压焊单元6是使热压焊头7移动的机构。热压焊单元6由未图示的伺服电动机和滚珠丝杠构成。热压焊单元6构成为通过伺服电动机使滚珠丝杠旋转从而产生滚珠丝杠的轴向上的驱动力。热压焊单元6构成为由滚珠丝杠的轴向产生相对于被接合物S垂直的Z轴方向上的驱动力(加压力)。热压焊单元6构成为能够通过对伺服电动机的输出进行控制而对Z轴方向的加压力即热压负载F进行任意设定。另外，在本实施方式中，热压焊单元6由伺服电动机和滚珠丝杠构成，但并不仅限于此，也可以由气动致动器、液压致动器或音圈电动机构成。热压焊单元6的加压力被控制为能够根据半导体芯片C的电极的个数、电极彼此与被接合物S的接触面积来进行改变。
热压焊头7隔着树脂片P对半导体芯片C进行吸附保持，将热压焊单元6的驱动力传递给半导体芯片C。热压焊头7安装在构成热压焊单元6的未图示的滚珠丝杠螺母上。并且，热压焊单元6被配置成与载台4对置。并且，通过热压焊单元6使热压焊头7在Z方向上移动从而与载台4接近。在图3中示出了热压焊头7的结构，在热压焊头7上设置有加热器8和附件9。
图3所示的加热器8用于对半导体芯片C进行加热，由筒式加热器构成。但是，并不仅限于筒式加热器，也可以是陶瓷加热器、橡胶加热器等，只要能够将半导体芯片C加热到规定的温度即可。并且，加热器8被组装于热压焊头7，但并不仅限于此，也可以构成为通过组装于载台4而从载台4侧隔着被接合物S对NCF进行加热。
附件9隔着树脂片P对半导体芯片C进行保持。附件9被设置成在热压焊头7上与载台4对置。附件9构成为能够一边对半导体芯片C进行定位一边进行吸附保持。并且，附件9构成为被加热器8加热。也就是说，附件9构成为能够对半导体芯片C进行定位保持，并且通过来自加热器8的传热对半导体芯片C进行加热。另外，在附件9上设置有用于吸附半导体芯片C的吸附孔90，吸附孔90与由真空泵等构成的减压机构91连通。通过使减压机构91运转，吸附孔90内部被减压，附件9隔着具有后述的开口部的树脂片P对半导体芯片C进行吸附保持。在该减压机构91中还设置有用于测量吸附孔90内部的压力的压力计93。在图3中，吸附孔90仅为1个部位，但并不仅限于此，也可以是多个部位，可以根据所吸附的半导体芯片C的大小来增加。
通过树脂片P，即使NCF在该压焊时从半导体芯片C露出，也不会附着在附件9上，因此附件9能够使压焊面的外周尺寸比半导体芯片C大。因此，能够使热在整个面上传导到半导体芯片C的周边部，使露出于半导体芯片C外周的NCF的焊脚形状稳定，能够提高接合强度。并且，通过使对半导体芯片C进行压焊的面的外周尺寸比安装的间距尺寸小，能够抑制相邻的半导体芯片C之间的干涉而进行该压焊。另外，为了高效地进行导热，优选对附件9使用具有50W/mK以上的热传导率的材料。
附件9如果是能够与加热器8分离而拆装的结构，则会很便宜，能够通过更换来与多个品种对应而优选，但也可以是一体型的构造。
树脂片提供机构2将树脂片卷出部2S和树脂片卷取部2R作为构成要素，将卷绕在树脂片卷出部2S上的带状的树脂片P提供到附件9与半导体芯片C之间，之后，利用树脂片卷取部2R进行卷取。在树脂片提供机构2中，除了树脂片卷出部2S和树脂片卷取部2R之外，也可以是用于稳定地搬送树脂片P的导辊等。并且，由于附件9隔着树脂片P对半导体芯片C进行吸附保持，所以需要在树脂片P的与附件9的吸附孔90对应的位置处也设置开口部P0。作为在树脂片P中设置开口部P0的方法，如后述那样，在树脂片提供部2中使用穿孔机2H(参照图6)来实施。但是，设置开口部P0的方法并不仅限于此，也可以是使用最初就具有开口部的树脂片P而使开口部与吸附孔90对位的方法等。这里，作为树脂片P，优选既具有柔软性、耐热性又优异、且在相对于半导体芯片的防粘性方面也优异的材料，作为具有该特性的材料，优选聚四氟乙烯(PTFE)、四氟乙烯-全氟烷氧基乙烯基醚共聚物(PFA)等氟树脂。并且，作为厚度，既要保持机械强度，也要考虑到针对半导体芯片的热传导性，因此优选为20～50μm左右。
图像识别装置10根据图像来获取半导体芯片C与被接合物S的位置信息。图像识别装置10构成为对保持于载台4的被接合物S上表面的对位标记和保持于附件9的半导体芯片C下表面的对位标记进行图像识别而获取被接合物S与半导体芯片C的位置信息。另外，关于被接合物S的对位标记，在被接合物S仅为配线基板S0的情况下，使用标记在配线基板S0上的对位标记，在被接合物S是在配线基板S0上层叠有半导体芯片C的被接合物的情况下，使用标记在配线基板S0上的对位标记或层叠而得的最上层的半导体芯片C的对位标记。
如图4所示，控制部11对安装装置1的构成要素进行控制。具体来说，控制部11可以是利用总线将CPU、ROM、RAM、HDD等连接而成的结构，或者也可以是由单芯片的LSI等构成的结构。控制部11对用于控制安装装置1的构成要素的各种程序或数据进行储存。
控制部11与载台4连接，能够分别对载台4的X轴方向、Y轴方向、θ轴方向的移动量进行控制。控制部11与加热器8连接，能够对加热器8的温度进行控制。特别是控制部11能够将热压焊头7的加压时的平均温度维持在由NCF的硬化温度以上并且是焊接的融点以上的温度构成的一定的范围内。控制部11与热压焊单元6连接，能够对热压焊单元6的Z轴方向上的加压力进行控制。控制部11与连通在附件9的吸附孔90的减压机构91连接，能够对附件9的吸附状态进行控制。控制部11与树脂片提供机构2连接，能够对附件9正下方的树脂片P进行搬送。控制部11与图像识别装置10连接，能够对图像识别装置10进行控制，获取半导体芯片C与被接合物S的位置信息。
以下，使用图5到图10对本发明的安装装置1所进行的安装工序进行说明。
首先，如图5所示，使树脂片P从远离附件9的表面的状态(图5的(a))紧贴于附件9表面(图5的(b))。该操作只要将附件9与树脂片P的相对距离缩短即可，可以通过热压焊工具6使热压焊工具9下降，也可以通过树脂片提供机构2使树脂片P上升。
接着，在图6中示出了在树脂片P紧贴于附件9表面的状态下，在树脂片的与附件9的吸附孔90对应的位置处设置开口部P0的过程。即，从使穿孔机2H的针部2HN与吸附孔90进行了对位的状态(图6的(a))开始，使穿孔机2H上升(图6的(a)～图6的(c))，在树脂片P中形成贯通孔然后使穿孔机2H下降。由此，在树脂片P的与附件9的吸附孔90对应的位置处形成开口部P0(图6的(d))。
在该状态下，通过未图示的半导体芯片交接机构将半导体芯片C配置在附件工具9正下方。通过在该阶段使减压机构91运转，半导体芯片C被吸附在附件工具9正下方的树脂片P上(图7的(a))。
以上，在从使附件9与树脂片P紧贴的过程到将半导体芯片吸附在树脂片P上的过程中，加热器8的温度被设定为不会从NCF产生逸出气体的温度。另外，不会从NCF产生逸出气体的温度根据NCF的组成而不同，但优选120℃以下，更优选100℃以下。
之后，如果变成图7的(b)那样突出于半导体芯片C上表面的电极ET埋没在树脂片P中的状态，便可以将加热器8的设定温度设为从NCF产生逸出气体的温度以上。即，即使将加热器8的设定温度设为从NCF产生逸出气体的温度，逸出气体也不会附着在附件9表面或吸附孔90内部。因此，如果变成图7的(b)的状态，则将加热器8的设定温度设为产生焊点BS的熔融并且产生NCF的硬化的温度，能够将半导体芯片C热压焊在被接合物S上而进行安装。另外，能够根据吸附孔90内部的压力来得知是否成为图7的(b)那样的状态。如果是图7的(b)的状态，则通过减压机构91的运转，使吸附孔90内部处于密闭状态，因此压力降低得较大(高真空侧)，但与此相对，如果没有变成突出于半导体芯片C上表面的电极ET埋没在树脂片P中的状态，则吸附孔90内部的压力降低得较小。因此，在半导体芯片C与树脂片P紧贴之后，利用压力计93对吸附孔90内部的压力进行监视，如果其测量值为规定的值以下，则能够判断为已成为图7的(b)的状态。另外，也可以使用流量计来代替压力计93，根据流力计的测量值为规定的值以下来判断为已成为图7的(b)的状态。
另外，利用图8的(a)的示意图示出了在图7的(b)中电极ET埋没在树脂片P中的状态，但实际上如在图8的(b)中示出的一例那样，在电极ET的周围形成有间隙PV。但是，由于在间隙PV的周围，树脂片P与半导体芯片C的上表面紧贴，所以吸附孔90内部的压力降低。
从图7的(a)的状态起，有时仅对吸附孔90内部进行减压便使突出于半导体芯片C上表面的电极ET埋没在树脂片P中而变成图7的(b)的状态，但也有时是电极ET稍微进入到树脂片P中的程度。能够通过吸附孔90内部的压力没有成为规定的值以下来判断处于这样的状态。在这样的情况下，半导体芯片C周边的气体被附件9表面或吸附孔90内部吸收。因此，在该阶段，需要将加热器8的设定温度设为不从NCF产生逸出气体的温度。
在仅对吸附孔90内部进行减压而没有变成半导体芯片C上表面的电极ET埋入到树脂片P中的状态的情况下，在进行了半导体芯片C与被接合物的对位之后，在将加热器8的设定温度设为不从NCF产生逸出气体的温度的状态下，通过热压焊单元6使半导体芯片C在Z轴方向上朝向被接合物S移动。由此，半导体芯片C下表面的电极EB与NCF接触(图9的(a))，进而当向Z轴下方向施加压力时，半导体芯片C受到来自上下两面的力。通过该来自上下两面的力使突出于半导体芯片C上表面的电极ET逐渐嵌入到树脂片P中，成为埋没在树脂片P中的状态(图9的(b))。此时同样地，如果利用压力计93对吸附孔90内部的压力进行监视，则其测量值为规定的值以下，因此能够判定为突出于半导体芯片C上表面的电极埋没在树脂片P中。在该阶段，即使将加热器8的设定温度设为从NCF产生逸出气体的温度，逸出气体也不会附着在附件9表面或吸附孔90内部，因此能够将加热器8的设定温度设为产生焊点BS的熔融并且产生NCF的硬化的温度，将半导体芯片C热压焊在被接合物S上而进行安装(图9的(c))。如果半导体芯片C对被接合物S的安装完成，则停止加热器8所进行的加热而对附件9进行降温，并且使热压焊单元6和树脂片提供机构2在Z轴方向上向与被接合物S相反的方向移动，将树脂片P从半导体芯片C剥离(图9的(d))。这里，由于树脂片P在热压焊后变成将突出于半导体芯片C上表面的电极ET埋没的状态，所以当仅使附件9上升时，树脂片P冷却、收缩从而变成无法从电极ET分开的状态，因此优选使其在紧贴着附件9的状态下上升。
之后，通过热压焊单元6与树脂片提供机构2的相对移动，使树脂片P从附件9表面分开(图10的(a)、图10的(b))。在该阶段，由于附件9正下方的树脂片P经过了高温工艺，所以存在物理性地热劣化或产生变形或污染的可能性。因此，使树脂片提供机构2运转(图10的(c))而将没有经过高温工艺的树脂片P配置在附件9的正下方。
以后，如果附件9的温度下降至低于从NCF产生逸出气体的温度，则使安装工序完成，或者如图5的(b)那样使树脂片提供机构2运转而使树脂片P与附件9表面紧贴，然后进行接下来的半导体芯片C的安装工序。
标号说明
1：安装装置；2：树脂片提供机构；2S：树脂片卷出部；2R：树脂片卷取部；2H：穿孔机；2HN：针部；3：基台；4：载台；5：支承架；6：热压焊单元；7：热压焊头；8：加热器；9：附件；10：图像识别装置；11：控制部；90：吸附孔；91：减压机构；93：压力计；C：半导体芯片；P：树脂片；S：被接合物；EB：半导体芯片下表面的电极；ET：半导体芯片上表面的电极；ES：被接合物上表面的电极；NCF：非导电性膜(粘接剂)。

Claims (9)

1.一种安装装置，其将在上下两面具有电极的半导体芯片以隔着热硬化性的粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上，其特征在于，
该安装装置具有热压焊头，该热压焊头具有在保持着所述半导体芯片的状态下进行加热而将该半导体芯片压焊于所述被接合物的功能，
所述热压焊头在对所述半导体芯片进行保持的面上具有吸附孔，
所述安装装置具有减压机构，该减压机构与所述吸附孔连通，对吸附孔内部进行减压，
所述安装装置还具有树脂片提供机构，该树脂片提供机构向所述半导体芯片与所述热压焊头之间提供树脂片，
使突出于所述半导体芯片上表面的电极埋没在所述树脂片中，然后进行热压焊。
2.根据权利要求1所述的安装装置，其特征在于，
所述安装装置还具有控制部，该控制部具有对所述热压焊头的加热温度进行设定的功能，
所述减压机构具有压力计，该压力计对所述吸附孔内部的压力进行测量，并将测量值输出给所述控制部，
所述控制部具有根据所述压力计的测量值对所述热压焊头的加热温度的设定值进行变更的功能。
3.根据权利要求1或2所述的安装装置，其特征在于，
所述树脂片提供机构具有如下的开孔功能：在树脂片的与所述吸附孔对应的位置形成贯通孔。
4.根据权利要求1～3中的任意一项所述的安装装置，其中，
所述安装装置具有如下的功能：在所述热压焊之后，在使所述树脂片与所述热压焊头表面紧贴的状态下，使所述树脂片从所述半导体芯片分开。
5.根据权利要求4所述的安装装置，其特征在于，
所述安装装置具有使所述该压焊头与所述树脂片分开的移动构件。
6.一种安装方法，将在上下两面具有电极的半导体芯片以隔着热硬化性的粘接剂的状态热压焊到在上表面具有电极且配置在所述半导体芯片的下侧的被接合物上，其特征在于，该安装方法具有如下的工序：
利用热压焊头隔着树脂片对所述半导体芯片进行吸附保持，其中，所述树脂片在与热压焊头的吸附孔对应的位置形成有贯通孔；
在使所述热压焊头成为规定的温度以下的状态下，使突出于所述半导体芯片上表面的电极埋没在所述树脂片中；以及
使所述热压焊头的设定温度上升，将所述半导体芯片下表面的电极和被接合物上表面的电极接合，并且使所述粘接剂热硬化。
7.根据权利要求6所述的安装方法，其特征在于，
在使突出于所述半导体芯片上表面的电极埋没在所述树脂片中的工序中，对所述吸附孔内的压力进行监视，在所述压力成为规定的值以下之后，使所述热压焊头的设定温度上升到将所述半导体芯片下表面的电极和被接合物上表面的电极接合并且使所述粘接剂热硬化的温度。
8.根据权利要求6或7所述的安装方法，其特征在于，
在所述热压焊之后，在使所述树脂片与所述热压焊头表面紧贴的状态下，使所述树脂片从所述半导体芯片分开。
9.根据权利要求6～8中的任意一项所述的安装方法，其特征在于，
在使所述树脂片从所述半导体芯片分开之后，使所述树脂片从所述热压焊头分开。
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