CN107195553A - A kind of forming method of improvement edge pattern - Google Patents
A kind of forming method of improvement edge pattern Download PDFInfo
- Publication number
- CN107195553A CN107195553A CN201710403482.9A CN201710403482A CN107195553A CN 107195553 A CN107195553 A CN 107195553A CN 201710403482 A CN201710403482 A CN 201710403482A CN 107195553 A CN107195553 A CN 107195553A
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- Prior art keywords
- carrier
- accepting groove
- shaping
- forming method
- pattern
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000006872 improvement Effects 0.000 title claims abstract description 17
- 238000007493 shaping process Methods 0.000 claims abstract description 43
- 238000000465 moulding Methods 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 14
- 239000003344 environmental pollutant Substances 0.000 abstract description 7
- 231100000719 pollutant Toxicity 0.000 abstract description 7
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 30
- 238000004806 packaging method and process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a kind of forming method of improvement edge pattern, comprises the following steps：A carrier is provided, the carrier is provided with an accepting groove, and the accepting groove includes bottom surface and the side wall upwardly extended by the bottom edge；On carrier surface formation tack coat, the bottom surface that naked core is fixed on to the accepting groove by the tack coat；The filling molding compound in the accepting groove, makes the naked core be formed compound parcel；The carrier is positioned in mould, the carrier is coordinated matched moulds shaping with mould, the shaping wafer of the parcel naked core is formed in the accepting groove；The demoulding, and the shaping wafer is detached from the carrier.The present invention utilizes special carrier structure, the edge that shaping wafer is contacted with tack coat is no longer excessively sharp, the problems such as so as to avoid occurring particulate pollutant or crackle in successive process, is conducive to the yield of raising encapsulating products.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, more particularly to a kind of forming method of improvement edge pattern.
Background technology
Because the terminal devices such as smart mobile phone are more and more faster to the development of compactization, specifically designed in miniaturization, it is thin
The importance of the Wafer level packaging of membranization and cost degradation is improved constantly.Fan-out-type wafer-level packaging (FOWLP：Fan-
Out WLP) technology at present be best suitable for high request movement/wireless market, and to it is other concern high-performance and small size cities
, it may have very strong attraction.
Moulding process is the committed step of fan-out-type wafer-level packaging.But in traditional moulding process, it is molded wafer
Edge pattern it is different from the Si wafers of standard.The shaping wafer particularly made by materials such as resins, there is particle or split in it
The problems such as line, has triggered the concern of industry.The edge that wafer is molded in traditional moulding process is more sharp, particularly on side
The position that edge is contacted with adhesive film (adhesive film), because the good wafer of plastic packaging may proceed to carry out other technique mistakes
Journey, edge is excessively sharp, and can be more easy to come in contact with plant equipment during transport, transmission, manufacturing process, be collided and produce
Particulate pollutant or the problems such as cause wafer breakage in itself, crackle.According to the placement direction of naked core, moulding process is divided into two
Plant shaping type, down face-up (face up) shaping and (face down) shaping.But whether shaping is gone back up
It is face-down shaping, can all there be sharp edge the side contacted with adhesive film.Both shaping types be not avoided that into
Occur sharp edge on type wafer, and which results in the appearance of crackle in successive process and particulate pollutant.
Therefore, the edge pattern of shaping wafer how is improved, to avoid occurring particulate pollutant in successive process or split
Line, it has also become those skilled in the art's major issue urgently to be resolved hurrily.
The content of the invention
Prior art in view of the above, it is an object of the invention to provide a kind of forming method of improvement edge pattern,
For solving the problem of edge of shaping wafer in the prior art sharply causes crackle and particulate pollutant.
In order to achieve the above objects and other related objects, the present invention provides a kind of forming method of improvement edge pattern, bag
Include following steps：
A carrier is provided, the carrier is provided with an accepting groove, and the accepting groove includes bottom surface and by the bottom edge
The side wall upwardly extended；
In carrier surface formation tack coat, naked core is fixed on to the bottom surface of the accepting groove by the tack coat
On；
The filling molding compound in the accepting groove, makes the naked core be formed compound parcel；
The carrier is positioned in mould, the carrier is coordinated matched moulds shaping with mould, is received described
The shaping wafer of the parcel naked core is formed in tank；
The demoulding, and the shaping wafer is detached from the carrier.
Alternatively, one or more of the material of the carrier in silicon, silica, metal, glass or ceramics.
Alternatively, the tack coat is polymer or adhesive tape, is formed using the method for spin coating or Continuous pressing device for stereo-pattern.
Alternatively, the mould includes groove, the opening contours phase of the groove and the accepting groove on the carrier
It coincide, during matched moulds, the molding compound fills up the space formed after the groove coincide with the accepting groove, to form shaping
Wafer.
Alternatively, the molding compound be cure package material, the cure package material include polymer-based material,
Resin-based materials, polyimides or epoxy resin.
Alternatively, the method for forming the molding compound is using the compression forming of vacuum lamination or spin coating, printing, passed
Pass molding or fluid-tight shaping.
Alternatively, it is formed with releasing layer in the molding die surface.
In order to achieve the above objects and other related objects, the present invention also provides a kind of carrier for above-mentioned forming method,
Wherein：
The carrier is provided with an accepting groove, and the accepting groove includes bottom surface and upwardly extended by the bottom edge
Side wall.
Alternatively, the bottom surface of the accepting groove is circle.
Alternatively, one or more of the material of the carrier in silicon, silica, metal, glass or ceramics.
As described above, the forming method of the improvement edge pattern of the present invention, has the advantages that：
The forming method of the present invention, using special carrier structure, makes the edge that shaping wafer is contacted with tack coat no longer
It is excessively sharp, the problems such as so as to avoid occurring particulate pollutant or crackle in successive process, is conducive to improving encapsulating products
Yield.
Brief description of the drawings
Fig. 1 is shown as the schematic diagram of the forming method for the improvement edge pattern that the present invention is provided.
Fig. 2 a are shown as the schematic top plan view for the carrier that the present invention is provided.
Fig. 2 b are shown as the diagrammatic cross-section for the carrier that the present invention is provided.
Fig. 3 a-3g are shown as the moulding process flow process schematic diagram of improvement edge provided in an embodiment of the present invention pattern.
Component label instructions
100 carriers
101 accepting grooves
200 tack coats
300 naked cores
400 molding compounds
500 moulds
600 releasing layers
S1~S5 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.It should be noted that, in the case where not conflicting, following examples and implementation
Feature in example can be mutually combined.
It should be noted that the diagram provided in following examples only illustrates the basic structure of the present invention in a schematic way
Think, then in schema only display with relevant component in the present invention rather than according to component count, shape and the size during actual implement
Draw, it is actual when implementing, and kenel, quantity and the ratio of each component can be a kind of random change, and its assembly layout kenel
It is likely more complexity.
Referring to Fig. 1, the present invention provides a kind of forming method of improvement edge pattern, comprise the following steps：
S1 provides a carrier, and the carrier is provided with an accepting groove, and the accepting groove includes bottom surface and by the bottom surface side
The side wall that edge is upwardly extended；
Naked core is fixed on the bottom surface of the accepting groove by S2 in carrier surface formation tack coat by the tack coat
On；
S3 filling molding compounds in the accepting groove, make the naked core be formed compound parcel；
The carrier is positioned in mould by S4, the carrier is coordinated matched moulds shaping with mould, described
The shaping wafer of the parcel naked core is formed in accepting groove；
S5 is stripped, and the shaping wafer is detached from the carrier.
When carrying out processing and forming, the carrier conventionally used for sticking naked core is plate, but in flat board carrier and shaping mould
Have after matched moulds shaping, the position that flat board carrier is combined with mould easily forms sharp edge.The forming method profit of the present invention
With special carrier structure, the edge that shaping wafer is contacted with tack coat is set no longer to be excessively sharp.
Fig. 2 a and Fig. 2 b are referred to, the carrier of above-mentioned forming method is provided with an accepting groove 101, and the accepting groove 101 is wrapped
Include bottom surface and the side wall upwardly extended by the bottom edge.
Specifically, as shown in Figure 2 a, the bottom surface of the accepting groove 101 can be circle, to coordinate mould to be formed
It is molded wafer.One or more of the material of the carrier in silicon, silica, metal, glass or ceramics, or other are similar
Thing.
Wherein, the depth D1 of the accepting groove needs to be more than height of the sharp edges in vertical direction of traditional handicraft appearance
Degree.Different moulding process, technological parameter sharp height can be slightly different, but all be micron level, house groove depth big
Maximum under different condition.But the plastic packaging of general wafer is highly also<=1mm, so the depth of accepting groove
It should be micron level.Such as the half that can select actual plastic packaging thickness.
Technical scheme is described in detail below by specific example.
Fig. 3 a-3g are referred to, the present embodiment, which provides a kind of use tailor-made vehicles, improves the moulding process of edge pattern.
First, as shown in Figure 3 a there is provided a special carrier 100, the carrier 100 is provided with an accepting groove 101, described to receive
Tank 101 includes bottom surface and the side wall upwardly extended by the bottom edge.Carrier 100 described in the present embodiment is with one
The silicon substrate of circular accepting groove 101, houses half of the groove depth for the shaping actual plastic packaging thickness of wafer.
Then, as shown in Figure 3 b, tack coat 200 is formed on the surface of carrier 100, then as shown in Figure 3 c, by naked core 300
On the bottom surface that the accepting groove 101 is fixed on by the tack coat 200.
Wherein, during the tack coat 200 can be polymer, adhesive tape or other analogs, the present embodiment, it can use naked
Core adhesive film (die attach film), non-conductive film (non-conductive film) etc..Form the tack coat 200
Method is spin coating, Continuous pressing device for stereo-pattern or other suitable methods., can be using conventional naked core paste tool during fixed naked core 300
(dieattach/bonding tool)。
It should be noted that can be one or more, naked core class in the quantity of naked core 300 that the bottom of accepting groove 101 is fixed
Type, naked core arrangement mode etc. can be designed according to being actually needed for shaping wafer, and the present invention is without limitation.
Next, as shown in Figure 3 d, the filling molding compound 400 in the accepting groove 101 makes the quilt of naked core 300
Molding compound 400 is wrapped up.Specifically, the molding compound 400 can be cure package material, for example, can be polymer
Sill, resin-based materials, polyimides, epoxy resin or other analogs.The method for forming the molding compound 400 can
Think using the compression forming of vacuum lamination or spin coating, printing, transfer modling or fluid-tight shaping.
Then, as shown in Figure 3 e, the carrier 100 is positioned in mould 500, makes the carrier 100 and shaping
Mould 500 coordinates matched moulds shaping, and the shaping wafer of the parcel naked core 300 is formed in the accepting groove 101.
Wherein, the mould 500 includes groove, the opening wheel of the groove and the accepting groove on the carrier 100
Exterior feature matches, during matched moulds, and the molding compound 400 fills up the space formed after the groove coincide with the accepting groove, with
Form shaping wafer.
It should be noted that the molding mode of face-up (face up) is illustrate only in accompanying drawing, but in practical application
In, forming method of the invention is also applied for the molding mode of (face down) down.Specifically, the mould 500
Traditional face-up (face up) mould can be used, it would however also be possible to employ face-down (face down) mould.Into
Groove on pattern tool 500 is the circular trough coordinated with accepting groove, and depth of groove to be made with housing groove depth sum satisfaction
Shaping wafer design need.
After matched moulds encapsulated moulding, it is stripped as illustrated in figure 3f, finally as shown in figure 3g by obtained shaping wafer and carrier 100
Separation.
For the ease of the demoulding, releasing layer 600 can be initially formed on the surface of mould 500, and matched moulds is molded again.Encapsulation
After shaping, the wafer after shaping can be separated with carrier 100 and tack coat 200 by peeling off (De-bond) technique, according to
The difference of carrier and process choice, the mode of stripping has hot soarfing from (adhesion layer loses viscosity after heating), laser lift-off (laser
Adhesion layer loses viscosity after irradiation) etc. method.
As shown in figure 3g, edge-smoothing is mellow and full for the shaping wafer finally obtained, and the edge particularly contacted with tack coat is not
It is excessively sharp again.
In summary, forming method of the invention, using special carrier structure, improves the edge shape of shaping wafer
Looks, the problems such as so as to avoid occurring particulate pollutant or crackle in successive process, are conducive to improving the yield of encapsulating products.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. the forming method of a kind of improvement edge pattern, it is characterised in that comprise the following steps：
A carrier is provided, the carrier is provided with an accepting groove, and the accepting groove includes bottom surface and upward by the bottom edge
The side wall of extension；
On carrier surface formation tack coat, the bottom surface that naked core is fixed on to the accepting groove by the tack coat；
The filling molding compound in the accepting groove, makes the naked core be formed compound parcel；
The carrier is positioned in mould, the carrier is coordinated matched moulds shaping with mould, in the accepting groove
The interior shaping wafer for forming the parcel naked core；
The demoulding, and the shaping wafer is detached from the carrier.
2. the forming method of improvement edge according to claim 1 pattern, it is characterised in that：The material of the carrier is selected from
One or more in silicon, silica, metal, glass or ceramics.
3. the forming method of improvement edge according to claim 1 pattern, it is characterised in that：The tack coat is polymer
Or adhesive tape, formed using the method for spin coating or Continuous pressing device for stereo-pattern.
4. the forming method of improvement edge according to claim 1 pattern, it is characterised in that：The mould includes recessed
Groove, the groove matches with the opening contours of the accepting groove on the carrier, during matched moulds, and the molding compound fills up described
The space that groove is formed after being coincide with the accepting groove, to form shaping wafer.
5. the forming method of improvement edge according to claim 1 pattern, it is characterised in that：The molding compound is solid
Change encapsulating material, the cure package material includes polymer-based material, resin-based materials, polyimides or epoxy resin.
6. the forming method of improvement edge according to claim 1 pattern, it is characterised in that：Form the molding compound
Method be using the compression forming of vacuum lamination or spin coating, printing, transfer modling or fluid-tight shaping.
7. the forming method of improvement edge according to claim 1 pattern, it is characterised in that：In the molding die surface
It is formed with releasing layer.
8. a kind of carrier of forming method for described in claim any one of 1-7, it is characterised in that：The carrier is provided with
One accepting groove, the accepting groove includes bottom surface and the side wall upwardly extended by the bottom edge.
9. carrier according to claim 8, it is characterised in that：The bottom surface of the accepting groove is circle.
10. carrier according to claim 8, it is characterised in that：The material of the carrier is selected from silicon, silica, metal, glass
One or more in glass or ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710403482.9A CN107195553B (en) | 2017-06-01 | 2017-06-01 | A kind of forming method improving edge pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710403482.9A CN107195553B (en) | 2017-06-01 | 2017-06-01 | A kind of forming method improving edge pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107195553A true CN107195553A (en) | 2017-09-22 |
| CN107195553B CN107195553B (en) | 2019-08-13 |
Family
ID=59876479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710403482.9A Active CN107195553B (en) | 2017-06-01 | 2017-06-01 | A kind of forming method improving edge pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107195553B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112959211A (en) * | 2021-02-22 | 2021-06-15 | 长江存储科技有限责任公司 | Wafer processing apparatus and processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070205513A1 (en) * | 2006-03-01 | 2007-09-06 | Infineon Technologies Ag | Composite board with semiconductor chips and plastic housing composition and method |
| US20100184256A1 (en) * | 2009-01-16 | 2010-07-22 | Shinko Electric Industries Co., Ltd. | Resin sealing method of semiconductor device |
| CN106684053A (en) * | 2017-03-10 | 2017-05-17 | 中芯长电半导体（江阴）有限公司 | Silicon wafer stage chip scale packaging structure and manufacturing method thereof |
| CN106684054A (en) * | 2017-03-10 | 2017-05-17 | 中芯长电半导体（江阴）有限公司 | Wafer level chip scale packaging structure and preparation method thereof |
-
2017
- 2017-06-01 CN CN201710403482.9A patent/CN107195553B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070205513A1 (en) * | 2006-03-01 | 2007-09-06 | Infineon Technologies Ag | Composite board with semiconductor chips and plastic housing composition and method |
| US20100184256A1 (en) * | 2009-01-16 | 2010-07-22 | Shinko Electric Industries Co., Ltd. | Resin sealing method of semiconductor device |
| CN106684053A (en) * | 2017-03-10 | 2017-05-17 | 中芯长电半导体（江阴）有限公司 | Silicon wafer stage chip scale packaging structure and manufacturing method thereof |
| CN106684054A (en) * | 2017-03-10 | 2017-05-17 | 中芯长电半导体（江阴）有限公司 | Wafer level chip scale packaging structure and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112959211A (en) * | 2021-02-22 | 2021-06-15 | 长江存储科技有限责任公司 | Wafer processing apparatus and processing method |
| CN112959211B (en) * | 2021-02-22 | 2021-12-31 | 长江存储科技有限责任公司 | Wafer processing apparatus and processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107195553B (en) | 2019-08-13 |
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Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |