CN107195552A - The minimizing technology of burr and the manufacture method of semiconductor device - Google Patents
The minimizing technology of burr and the manufacture method of semiconductor device Download PDFInfo
- Publication number
- CN107195552A CN107195552A CN201710075323.0A CN201710075323A CN107195552A CN 107195552 A CN107195552 A CN 107195552A CN 201710075323 A CN201710075323 A CN 201710075323A CN 107195552 A CN107195552 A CN 107195552A
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- China
- Prior art keywords
- lead frame
- removal step
- fluid
- burr
- minimizing technology
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000012530 fluid Substances 0.000 claims abstract description 61
- 238000005538 encapsulation Methods 0.000 claims abstract description 53
- 239000007921 spray Substances 0.000 claims abstract description 7
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 abstract description 41
- 229920005989 resin Polymers 0.000 abstract description 41
- 239000000758 substrate Substances 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005507 spraying Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 208000011580 syndromic disease Diseases 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
It is an object of the invention to provide the manufacture method of the minimizing technology of burr and semiconductor device, during resin burr on lead frame is removed, the damage to semiconductor device is reduced.Burr in the lead frame that the minimizing technology removal of the burr of the present invention is provided projectingly from the encapsulation part of packaged semiconductor, including the first removal step, first removal step heats lead frame, and sprays fluid to lead frame and remove flash removed.Can also possess the second removal step, second removal step after the first removal step, remove than fluid is sprayed in the first removal step scope narrower range in burr, to lead frame local irradiation laser can remove flash removed in the second removal step.
Description
Technical field
The present invention relates to the manufacture method of a kind of minimizing technology of burr and semiconductor device.
Background technology
In the manufacturing process using the semiconductor device of the packaged semiconductors such as resin, sometimes exposed to package material
Adhere to micro encapsulating material on lead frame on the outside of material.In the past, it is known to use laser etc. removes the envelope being attached on lead frame
The method of package material (for example, referring to patent document 1 and 2).
Patent document 1：Japanese Unexamined Patent Publication 2011-91194 publications
Patent document 2：Japanese Unexamined Patent Publication 2007-258490 publications
The content of the invention
Technical problem
If the encapsulating material on lead frame is attached to using laser ablation for a long time, it some times happens that burning lead frame
The situation about being damaged to semiconductor device band such as surface.
The 1st aspect of the present invention is set there is provided a kind of mode gone divided by protruded from the encapsulation part of packaged semiconductor
Lead frame in burr minimizing technology.Minimizing technology can include the first removal step, and lead frame is heated, and to lead
Frame sprays fluid and removes flash removed.
Minimizing technology can also include the second removal step, after the first removal step, remove the first removal step of ratio
Burr in the scope narrower range of middle injection fluid., can be to lead frame local irradiation laser in the second removal step
Make a return journey flash removed.
In the first removal step, can by spraying heated fluid to lead frame, so that heat lead frame, and
And remove flash removed.Fluid can include at least one of liquid, steam and non-active gas.
In the first removal step, fluid can also be heated, to cause the temperature of fluid more than 90 degree and seal
Below the after-hardening temperature in dress portion.In the first removal step, fluid can also be heated, to cause the temperature of fluid to exist
More than 120 degree and below 130 degree.In the first removal step, lead frame can also be heated, sprayed a fluid into
On heated lead frame, flash removed is removed.
In the first removal step, it can use and be arranged on encapsulation part and by between the position of injection fluid and protection packaging
The protection portion that portion is not influenceed by fluid, is sprayed a fluid on lead frame.Protection portion protects at least a portion of lead frame not
Influenceed by fluid, in the second removal step, the lead that the region that fluid influences is protected from by protection portion can be removed
Burr on frame.Protection portion can have the plate-shaped member that thickness is more than 1 times and less than 2 times of lead frame.
There is provided a kind of manufacture method of semiconductor device in the 2nd aspect of the present invention.Manufacture method can include being formed
The circuit forming step of electronic circuit comprising semiconductor chip.Manufacture method can include encapsulation electronic circuit and be connected to electricity
A part for lead frame on sub-circuit, and form the encapsulation part forming step for the encapsulation part for exposing lead frame.Manufacture method
It can also include heating lead frame and spray fluid to lead frame and go the first removal step of flash removed.
It should illustrate, the unrequited all features of the invention of the above-mentioned content of the invention.In addition, the recombinant of these syndromes
Also invention can be turned into.
Brief description of the drawings
Fig. 1 is the figure for the summary for illustrating semiconductor device 100.
Fig. 2 is the figure of an example of the first removal step that explanation removes flash removed 30.
Fig. 3 is the schematic diagram of the relation between the temperature in epoxy system resin and adhesive strength.
Fig. 4 is the schematic diagram of the second removal step after the first removal step shown in Fig. 2.
Fig. 5 is the figure of a part for the manufacturing process for illustrating semiconductor device 100.
Fig. 6 is the sectional view for other examples for illustrating the first removal step.
Fig. 7 is the figure of an example of the manufacturing process of semiconductor device 100.
Fig. 8 represents to determine an example of the measure device 300 of the adhesive strength of the resin shown in Fig. 3.
Symbol description
10：Encapsulation part
20：Lead frame
22：Substrate
30：Burr
32：Nozzle
40：Wire
50：Semiconductor chip
60：Dam bar
70：Removal device
72：Protection portion
100：Semiconductor device
300：Determine device
302：Downside fixture
304：Upside fixture
306：Resin placement section
308：Resin
310：Heating part
Embodiment
Hereinafter, the present invention is illustrated by the embodiment of invention, but following embodiment is not limited to claim
Invention.In addition, all combinations of the feature illustrated in embodiment are not limited to necessary to the solution of invention.
Fig. 1 is the figure for the summary for illustrating semiconductor device 100.Near the end that semiconductor device 100 is shown in Fig. 1
Top view and sectional view.As seen in the overhead view, semiconductor device 100 possesses encapsulation part 10 and lead frame 20.As shown in cross section,
The semiconductor chip 50 and wire 40 of more than 1 are accommodated with the inside of encapsulation part 10.
Semiconductor chip 50 includes the semiconductor element such as IGBT (insulated gate bipolar transistor) or power MOSFET
Part.But, the semiconductor element formed on semiconductor chip 50 is not limited to power semiconductor.
Semiconductor chip 50 is configured at substrate 22.Substrate 22 can be conductive plate or be formed on insulated substrate
There is the substrate of conductive pattern.When the vertical gate semiconductor element formation for having electric current flowing between substrate surface and the back side is partly being led
During body chip 50, electrode is respectively formed with opposed 2 interarea in semiconductor chip 50.The electrode opposed with substrate 22
It is electrically connected with by solder etc. with substrate 22.
Wire 40 including conductive materials such as gold, the metals of copper and aluminium by forming, and by lead frame 20 and semiconductor chip 50
At least one electrode be electrically connected with.Lead frame 20 including conductive material the metal such as copper and aluminium by forming.Lead frame 20
It can be the conductive plate with the phase same material of substrate 22.In addition, lead frame 20 can it is separately positioned with substrate 22 and/or with substrate 22
It is integrally formed.
In addition, the internal structure of encapsulation part 10 is not limited to above-mentioned example.It could be formed with semiconductor chip 50
Lateral type semiconductor element.In addition, semiconductor chip 50 can be only fitted on insulated substrate, each lead frame 20 and semiconductor chip
50 are connected by wire 40.Furthermore it is possible to be electrically connected with semiconductor chip 50 with lead frame 20 instead of wire 40 with busbar etc.,
Semiconductor chip 50 and lead frame 20 can also be electrically connected with using conductive pole and circuit board.
Encapsulation part 10 covers whole semiconductor chip 50 and wire 40, protection semiconductor chip 50 and wire 40.This implementation
The encapsulation part 10 of example is formed by the thermosetting resin of insulating properties.In order to distribute the heat of the grade generation of semiconductor chip 50, preferably seal
Dress portion 10 is formed by the preferable resin of the thermal conductivity such as epoxy system resin.
Lead frame 20 is set in the way of the outside that one part is projected into encapsulation part 10.Should illustrate, with shown in Fig. 1
The end edge of end edge opposite side of substrate 22 be also equipped with lead frame 20.The lead frame 20 and substrate 22 of the opposite side can be with
It is integrally formed, can also separates.The lead frame 20 of the opposite side from the opposite side of lead frame 20 shown in Fig. 1 to encapsulation
The outside extension in portion 10.
In the manufacturing process of semiconductor device 100, sometimes on the surface of the lead frame 20 exposed to the outside of encapsulation part 10
It is formed with the burr 30 for the material for being attached to encapsulation part 10.For example, among the surface of lead frame 20, adjacent with encapsulation part 10
Region easily form burr 30.If burr 30 of leaving is remained, insulating properties of semiconductor device 100 etc. can be influenceed, therefore
It is preferred that removing flash removed 30.
Fig. 2 is the figure of an example of the first removal step that explanation removes flash removed 30.Fig. 2 is that to be exaggerated lead frame 20 attached
Near oblique view.In the first removal step, heat lead frame 20, and spray fluid to lead frame 20 and remove flash removed 30.
In the first removal step, in order to remove flash removed 30, the fluid sprayed to lead frame 20 can be heated.
The fluid heated is sprayed on lead frame 20 and carrys out heat lead frame 20.In other embodiments, in addition to deburring fluid,
Heat lead frame 20 can also be carried out to the supply energy of lead frame 20.For example, lead frame 20 can be placed in hot environment, also may be used
So that high temp objects contact lead-wire frame 20, the energy beyond the heats such as electric current can also be supplied to lead frame 20, makes lead frame 20
Heating.
In addition, the fluid sprayed to lead frame 20 be the liquid of vaporific, drops or flowing water shape, steam or including
The gas of non-active gas.Fluid can include at least one of aforesaid liquid, steam and gas.Liquid can be water,
Can be the liquid beyond water.In the case where using the liquid beyond water, it can be cleaned after flash removed 30 is removed with water.
By heat lead frame 20, the adhesive strength of the resin that is attached on lead frame 20 etc. can be reduced.In this shape
Under state, due to spraying fluid to lead frame 20, it is possible to remove flash removed 30 easily.
Fig. 3 is the schematic diagram of the relation between temperature and adhesive strength in epoxy system resin.Figure 3 illustrates 2 kinds of rings
The characteristic of oxygen system resin.As can be seen here, any one resin is rising with temperature and adhesive strength declines.
It can be seen that, particularly before temperature reaches 100 degree or so, the adhesive strength of epoxy system resin can drastically decline.
When spraying heated fluid to lead frame 20, preferably sprayed in the state of fluid is heated into more than 90 degree.But,
By the temperature control of fluid formed encapsulation part 10 resin after-hardening temperature (After curing temperature) with
Under.The after-hardening temperature of the resin of the present embodiment is 180 degree or so.
In addition, when temperature reaches 120 degree or so, the adhesive strength of epoxy system resin substantially disappears.The temperature of fluid
Can be more than 120 degree.On the other hand, if temperature reaches more than 130 degree, even if improving temperature, the adhesive strength of resin
It is substantially constant.Therefore, the temperature of fluid can be below 130 degree.In addition, the temperature of fluid can turn in the vitrifying of resin
In the range of ± 10 degree of temperature.The glass transition temperature of resin shown in Fig. 3 is 120 ± 10 degree.
Should illustrate, be not added with hot fluid and in the case that lead frame 20 is placed on into hot environment, by lead frame 20
Environment temperature control with above-mentioned fluid temperature (F.T.) identical temperature.In addition, in the case where lead frame 20 is directly heated, will draw
The temperature control of wire frame 20 with above-mentioned fluid temperature (F.T.) identical temperature.
Fig. 4 is the figure for illustrating the second removal step after the first removal step shown in Fig. 2.In the first removal step
In, due to spraying fluid to lead frame 20, therefore more difficult accurately control jeting area.Therefore, if it is desired to which fluid is sprayed
The vicinity of encapsulation part 10 is mapped to, then fluid can be sprayed to encapsulation part 10 sometimes, and reams encapsulation part 10.
Therefore, in the first removal step, preferably not to the neighbouring injection fluid of encapsulation part 10.For example, being hidden from fluid
Cover in the state of the lead frame 20 near encapsulation part 10 and encapsulation part 10, fluid is sprayed to lead frame 20.As a result, in masking
The region residual burr 30 of lead frame 20.
In second removal step, the burr 30 of lead frame 20 near encapsulation part 10 is removed.In the second removal step, small
Flash removed 30 is removed in the range of the lead frame 20 of fluid is jetted in the first removal step.For example, in the first removal step
In, the injection stream into the scope R1 apart from the front end of lead frame 20 (that is, with the end of the opposite side of encapsulation part 10) specific length
Body.Now, the remaining burr 30 in remaining scope R2.
It can be less than the 1/3 of scope R1 length along the scope R2 of the bearing of trend of lead frame 20 length, also may be used
To be less than 1/5.As long as the fluid in the removal steps of scope R2 first is not ejected into the length of the degree of encapsulation part 10.
In second removal step, by can more precisely control the method for removing scope to remove than the first removal step
Burr 30.In second removal step of the present embodiment, flash removed 30 is removed to the local irradiation laser of lead frame 20.Laser it is straight
Footpath can be smaller than the length of lead frame 20, can also be smaller than the width of lead frame 20.The width of lead frame 20 refers in tabular
In the width in the direction vertical with the bearing of trend of lead frame 20 in the interarea of lead frame.As an example, lead frame 20
Length is more than 1mm, and width is about more than 0.2mm and below 0.4mm.In addition, the thickness of encapsulation part 10 is 5mm or so.
In the second removal step, laser scanning can be used within the scope R2 of lead frame 20.In addition, being removed second
In step, in the region R1 that fluid is jetted in the first removal step, can pair with scope R2 adjacent portions region shine
Penetrate laser.
In the minimizing technology of the present embodiment, most of burr 30 is removed in the first removal step.It therefore, it can effectively
Remove flash removed 30.In addition, removing the burr 30 near encapsulation part 10 with laser etc..Therefore, laser etc. can not only be reduced to drawing
The damage of wire frame 20, can also accurately remove flash removed 30.
It should illustrate, in the second removal step, flash removed 30 can also be removed with the method beyond laser.For example, with micro-
Thin brush etc. removes scope R2 burr 30.
Fig. 5 is the figure of a part for the manufacturing process for illustrating semiconductor device 100.In the work of manufacture semiconductor device 100
In skill, the lead frame 20 of multiple semiconductor devices 100 is integrally formed with common dam bar (Dam bar) 60.Each semiconductor
Device 100 has the encapsulation part 10 before after-hardening.
Multiple semiconductor devices 100 are moved to the removal of burr 30 in the state of being connected with common dam bar 60
In device 70.After flash removed 30 is removed, after-hardening is carried out after encapsulation part 10 is heated.After after-hardening, cut along cutting line A
Disconnected lead frame 20, separates each semiconductor device 100.
Fig. 6 is the sectional view for other examples for illustrating the first removal step.In first removal step of the present embodiment, profit
With being arranged on encapsulation part 10 and by between the position of injection fluid and protection portion 72 that protection packaging portion 10 is not influenceed by fluid.
The protection portion 72 of the present embodiment has the plate-shaped member that one end is in contact with the surface of lead frame 20.
In the state of protection portion 72 is in contact with the surface of lead frame 20, from nozzle 32 to the injection stream of lead frame 20
Body.In addition, protection portion 72 can also with the surface of lead frame 20 is a little deviates.The distance between nozzle 32 and lead frame 20 can be with
Less than the height of protection portion 72.In addition, in the case of also spraying fluid at the back side from lead frame 20, in the dorsal part of lead frame 20
Also configuration protection portion 72.
Protection portion 72 can also form the position higher than encapsulation part 10.The height of protection portion 72 and encapsulation part 10 refers to hang down
Directly in the height on the direction on the surface of lead frame 20.The height of protection portion 72 can be more than 2 times of the height of encapsulation part 10.
In the second removal step, the burr 30 in the region protected by protection portion 72 from fluid is removed.Second
In removal step, without using protection portion 72.
It is preferred that the thickness of the degree for the encapsulation part 10 that the thickness W1 of protection portion 72, which is fluid, to be reached.For example, protection portion
72 thickness W1 can be more than 1 times of the thickness W2 of lead frame 20.
In addition, if the thickness W1 of protection portion 72 is excessive, then flash removed 30 is removed with laser etc. in the second removal step
Scope can become big.It is therefore preferable that less than 2 times of degree of the thickness W1 of protection portion 72 in the thickness W2 of lead frame 20.
As an example, the thickness W2 of lead frame 20 is more than 0.1mm and below 0.2mm degree.On the other hand, protect
The thickness W1 in shield portion 72 can be more than 0.15mm and below 0.3mm.
Fig. 7 is the figure of an example of the manufacturing process for representing semiconductor device 100.In the manufacturing process of the present embodiment
In, there is the first removal step S406 between encapsulation part forming step S404 and after-hardening step S408.More specifically, exist
There is the first removal step S406 between encapsulation part forming step S404 and the second removal step S408.
First, being formed in circuit forming step S400 includes the electronic circuit of semiconductor chip 50.Walked in circuit formation
In rapid S400, semiconductor chip 50 is welded (S401) on substrate 22, semiconductor chip 50 is connected by welding with lead frame 20
Wire 40 (S402).
Then, in encapsulation part forming step S404, the encapsulation part 10 such as resin is formed, the encapsulation part 10 such as described resin is encapsulated
A part for electronic circuit and the lead frame 20 being connected with semiconductor chip 50 including semiconductor chip 50.In S404,
Encapsulation part 10 can be made to be hardened under than after-hardening temperature lower temperature.
In addition, in encapsulation part forming step S404, after hardening of resin is made, it will can be formed between lead frame 20
Resin is punched and removed.Now, the resin for remaining in the surface of lead frame 20 is burr 30.
Next, in the first removal step S406, carrying out heat lead frame 20 and spraying the heat energy underturner of fluid
Skill.During by the water or water-vapour spray of heating to lead frame 20, preferably the ejection pressure of water or vapor 2MPa~
10MPa scope, can also 2.5MPa~7.5MPa scope.From the jet that nozzle diameter is 0.5~1.5mm to lead
The distance of frame 20 is adjusted to below 5cm distance, and the injecting time to each semiconductor device 100 is about 0.5 second~2 seconds.
In addition, when by the nitrogen jet of heating to lead frame 20, nitrogen sprays scope of the pressure in 2MPa~10MPa
Be preferred, can also 2.5MPa~7.5MPa scope.Using the jet from nozzle diameter as 0.5~1.5mm to lead frame 20
Distance be adjusted for below the 5cm mode of distance, the injecting time for each semiconductor device 100 is 0.5 second~2
The degree of second.
Then, in the second removal step S408, to area illumination laser near the encapsulation part 10 of lead frame 20 etc., go
Flash removed 30.First removal step S406 and the second removal step S408 processing with Fig. 1~processing illustrated in fig. 6 phase
Together.
Then, in after-hardening step S410, by the after-hardening of encapsulation part 10.Next, in cut-out step S412, cut-out
Dam bar 60 and lead frame 20, each semiconductor device 100 is separated from dam bar 60.
Then, in cutting separating step S414, each semiconductor device 100 is completed.For example, in S414, can also
The technique on the surface including electroplate lead wire frame 20, the technique of shape for adjusting encapsulation part 10 etc..Manufacture in the present embodiment
Method, can accurately remove flash removed 30, additionally it is possible to efficiently manufacture the less semiconductor of the damage brought by deburring and fill
Put 100.
Semiconductor device 100 is less due to the damage in lead frame 20 or encapsulation part 10, long-term therefore, it is possible to ensure
Reliability.It may be thus possible, for example, to control to fill for hybrid vehicle, the power inverter of electric automobile or electrical power conversion
Put.
Fig. 8 represents to determine an example of the measure device 300 of the resin bonding intensity shown in Fig. 3.Device 300 is determined to have
There are resin placement section 306, downside fixture 302, upside fixture 304 and heating part 310.
Determining device 300 makes the resin 308 of measure object be attached to the surface of resin placement section 306, the resin placement section
306 are fixed on the downside surface of fixture 302.Resin placement section 306 with the identical metal material of lead frame 20 by forming.
Heating part 310 is arranged on the back side of downside fixture 302, is surveyed via downside fixture 302 and the heating of resin placement section 306
Determine the resin 308 of object.Furthermore it is preferred that determining device 300 also has the temperature detection being measured to the temperature of resin 308
Portion.
Upside fixture 304 along the surface of resin placement section 306 from the top of resin placement section 306 to may move downwards
Mode set.As upside fixture 304 is moved downwards, apply downward power to resin 308.Upside fixture 304 gradually increases
Be affixed by the power for being added to resin 308, detect from resin placement section 306 peel off resin 308 when power.By to each of resin 308
Temperature implements such measure, determines the characteristic shown in Fig. 3.
More than, the present invention is illustrated using embodiment, but the scope of the technology of the present invention is not limited to above-mentioned embodiment
Described in scope.Those skilled in the art, which would appreciate that, to carry out various changes or improvement to above-mentioned embodiment.According to power
The record of sharp claim understands that the various changes carried out to above-mentioned embodiment or the mode of improvement are obviously also included within the present invention
Technical scheme in.
It should be noted that in the claims, specification and drawings in shown device, system, program and method
The execution sequence that respectively handles such as action, order, step and stage not especially clearly " ... before ", " prior " etc., separately
Outside, so long as not the result of the pre-treatment needed to use in subsequent treatment, it is possible to realize in any order.It is right for the sake of convenient
Motion flow in claims, specification and drawings is used " first ", and " following " etc. illustrates, and is not also indicated that certain
To implement according to the order.
Claims (12)
1. a kind of minimizing technology of burr, it is characterised in that the mode gone divided by protruded from the encapsulation part of packaged semiconductor
Burr in the lead frame of setting, the minimizing technology includes：
First removal step, the lead frame is heated, and is sprayed fluid to the lead frame and removed the burr.
2. minimizing technology according to claim 1, it is characterised in that the minimizing technology also includes the second removal step,
Second removal step removed after first removal step than in first removal step spray fluid scope more
The burr in narrow scope.
3. minimizing technology according to claim 2, it is characterised in that in second removal step, to the lead
Frame local irradiation laser and remove the burr.
4. the minimizing technology according to Claims 2 or 3, it is characterised in that in first removal step, by by
The heated fluid injection heats the lead frame to the lead frame, while removing the burr.
5. minimizing technology according to claim 4, it is characterised in that the fluid includes liquid, steam and nonactive gas
At least one of body.
6. the minimizing technology according to claim 4 or 5, it is characterised in that in first removal step, to the stream
Body is heated, to cause the temperature of the fluid more than 90 degree and below the after-hardening temperature of the encapsulation part.
7. the minimizing technology according to claim 4 or 5, it is characterised in that in first removal step, to the stream
Body is heated, to cause the temperature of the fluid more than 120 degree and less than 130 degree.
8. the minimizing technology according to Claims 2 or 3, it is characterised in that in first removal step, draw to described
Wire frame is heated, and the fluid injection is removed into the burr to the heated lead frame.
9. the minimizing technology according to any one of claim 2~8, it is characterised in that in first removal step
In, using protection portion, and by the fluid injection to the lead frame, the protection portion is arranged on the encapsulation part with being sprayed
Penetrate between the position of the fluid and protect the encapsulation part not influenceed by the fluid.
10. minimizing technology according to claim 9, it is characterised in that the protection portion protects the lead frame at least
A part is not influenceed by the fluid, in second removal step, removes being protected by the protection portion for the lead frame
Protect the burr in the region not influenceed by the fluid.
11. the minimizing technology according to claim 9 or 10, it is characterised in that there is the protection portion thickness to draw to be described
More than 1 times of wire frame and less than 2 times of plate-shaped member.
12. a kind of manufacture method of semiconductor device, it is characterised in that including：
Circuit forming step, forms the electronic circuit for including semiconductor chip；
Encapsulation part forming step, encapsulates a part for the electronic circuit and the lead frame being connected with the electronic circuit, and shape
Into the encapsulation part for exposing lead frame；
First removal step, the lead frame is heated, and is sprayed fluid to the lead frame and removed flash removed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016049857A JP6753086B2 (en) | 2016-03-14 | 2016-03-14 | Removal method and manufacturing method |
| JP2016-049857 | 2016-03-14 |
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| CN107195552A true CN107195552A (en) | 2017-09-22 |
| CN107195552B CN107195552B (en) | 2019-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710075323.0A Active CN107195552B (en) | 2016-03-14 | 2017-02-13 | The minimizing technology of burr and the manufacturing method of semiconductor device |
Country Status (2)
| Country | Link |
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| JP (1) | JP6753086B2 (en) |
| CN (1) | CN107195552B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7442927B2 (en) | 2019-08-06 | 2024-03-05 | 株式会社ディスコ | Chip manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142664A (en) * | 1993-11-18 | 1995-06-02 | Nec Corp | Manufacture of resin-sealed semiconductor device |
| CN101661894A (en) * | 2008-08-28 | 2010-03-03 | 三洋电机株式会社 | Resin sealing type semiconductor device and method of manufacturing the same, and resin sealing type electronic device |
| CN102044451A (en) * | 2009-10-22 | 2011-05-04 | 瑞萨电子株式会社 | Method of manufacturing semiconductor device and method of manufacturing electronic device |
| CN105185752A (en) * | 2010-05-12 | 2015-12-23 | 瑞萨电子株式会社 | Semiconductor device and fabrication method thereof |
| CN205039147U (en) * | 2014-09-29 | 2016-02-17 | 瑞萨电子株式会社 | Semiconductor device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5793533A (en) * | 1980-12-03 | 1982-06-10 | Nec Corp | Manufacture of semiconductor device |
| JPS62118991A (en) * | 1985-11-19 | 1987-05-30 | Nec Corp | Laser deburring method |
| JPH0271535A (en) * | 1988-05-12 | 1990-03-12 | Sanken Electric Co Ltd | Removal of resin burr of resin-sealed electronic component |
| JPH04348043A (en) * | 1990-11-27 | 1992-12-03 | Seishiyou Electron:Kk | Resin mold deflashing apparatus for electronic device |
| JP2806712B2 (en) * | 1992-10-27 | 1998-09-30 | 九州日本電気株式会社 | Semiconductor device manufacturing equipment |
| KR100490680B1 (en) * | 2003-05-12 | 2005-05-19 | 주식회사 젯텍 | The Semi-Conductor Package having Grooves in the Side Flash, the above Grooving Method and the Deflashing Method thereof |
-
2016
- 2016-03-14 JP JP2016049857A patent/JP6753086B2/en not_active Expired - Fee Related
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2017
- 2017-02-13 CN CN201710075323.0A patent/CN107195552B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142664A (en) * | 1993-11-18 | 1995-06-02 | Nec Corp | Manufacture of resin-sealed semiconductor device |
| CN101661894A (en) * | 2008-08-28 | 2010-03-03 | 三洋电机株式会社 | Resin sealing type semiconductor device and method of manufacturing the same, and resin sealing type electronic device |
| CN102044451A (en) * | 2009-10-22 | 2011-05-04 | 瑞萨电子株式会社 | Method of manufacturing semiconductor device and method of manufacturing electronic device |
| CN105185752A (en) * | 2010-05-12 | 2015-12-23 | 瑞萨电子株式会社 | Semiconductor device and fabrication method thereof |
| CN205039147U (en) * | 2014-09-29 | 2016-02-17 | 瑞萨电子株式会社 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107195552B (en) | 2019-10-18 |
| JP6753086B2 (en) | 2020-09-09 |
| JP2017168508A (en) | 2017-09-21 |
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